KR200309098Y1 - Plasma etching apparatus of gun type - Google Patents

Abstract

The present invention relates to a gun type plasma etching apparatus, comprising: a housing having a chamber region capable of creating a vacuum atmosphere; Plasma generating means installed at an inlet side of the chamber region to generate plasma by ionizing a reactive gas supplied to the chamber region by a predetermined potential difference and to activate plasma ions by a predetermined magnetic force; And plasma ion extracting means provided at an outlet side of the chamber region so as to extract plasma ions generated by the plasma generating means in a beam form with respect to a predetermined etching target.

Description

Plasma etching apparatus of gun type

The present invention relates to a gun type plasma etching apparatus, and more specifically, a gun type structure having a structure that generates plasma by interaction between an electric field and a magnetic field and activates plasma ions to easily release them to a surface electrode of a crystal oscillator. The present invention relates to a plasma etching apparatus.

In general, the plasma etching apparatus is mainly used in the semiconductor manufacturing process, in particular for etching the surface electrode of the crystal oscillator applicable to the surface-mounted oscillator for mobile communication devices. The crystal oscillator is for generating a resonant frequency of the mobile communication device, and the resonant frequency of the crystal oscillator is determined according to the thickness and mass of the electrode formed by the thickness of the crystal piece and the method of deposition on the surface of the crystal piece.

The plasma etching apparatus for etching the surface electrode of the conventional crystal oscillator heats a filament installed in a predetermined chamber to radiate hot electrons, introduces a reactive gas into the chamber, and ionizes the reactive gas by a predetermined potential difference to plasma By generating a structure, the high density plasma ion beam can be drawn out to the surface electrode of the crystal oscillator.

However, in the conventional plasma etching apparatus, since the filament that has been precisely processed to emit hot electrons is employed in the chamber, the cost of the overall etching equipment is increased, and the filament is carbonized by the plasma ions, which must be replaced frequently from time to time. There was a hassle. In addition, the conventional plasma etching apparatus is limited to the micro-vapor deposition equipment using a turbo pump as a vacuum source, and there is a problem in that it is not adopted to the micro-vapor deposition equipment in which a diffusion pump is adopted, and thus there is a problem in that it is not compatible.

The present invention has been conceived to improve the above problems, it is not necessary to replace the filament from time to time, convenient, simple structure, easy to disassemble and assembly, can greatly reduce the manufacturing cost of equipment, To provide a plasma type plasma etching apparatus having a structure that can generate plasma by the interaction of the electric field and the magnetic field so as to be compatible with the micro-vapor deposition equipment, and further activate the plasma ions to be easily released to the surface electrode of the crystal oscillator. The purpose is.

1 is an exploded perspective view showing a gun type plasma etching apparatus according to a preferred embodiment of the present invention.

2 is a cross-sectional view of the combined configuration of FIG.

FIG. 3 is a side view schematically showing the arrangement of the housing and chamber regions shown in FIG. 1; FIG.

4 is a plan view schematically showing the arrangement of the permanent magnet shown in FIG.

5A and 5B are cross-sectional / planar views showing the structure of the gas supply source shown in FIG.

6 is a cross-sectional view for explaining the operation of the gun type plasma etching apparatus according to a preferred embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

10 ... housing 15 ... chamber area

20 ... chamber vessel 30 ... plasma generating means

31 ... permanent magnet 32 ... cathode electrode

39.Anode electrode 40 ... Gas source

50. Plasma ion extracting means 51 ... First grid member

52. Second grid member 60 ... Cover member

61 ... cover plate 63 ... 1st cooling plate

64 ... 2nd Cooling Piece 70 ... Cooling Unit

71 ... space 72 ... water injection port

74. Water discharge port

The present invention for achieving the above object, the housing having a chamber area capable of generating a plasma; Plasma generating means installed at an inlet side of the chamber region to generate plasma by ionizing a reactive gas supplied to the chamber region by a predetermined potential difference and to activate plasma ions by a predetermined magnetic force; And plasma ion extracting means provided at an outlet side of the chamber region so as to extract plasma ions generated by the plasma generating means in a beam form with respect to a predetermined etching target.

In the plasma plasma etching apparatus of the gun type according to the present invention, the plasma generating means comprises: a plurality of permanent magnets radially installed on the inner wall of the inlet side of the chamber area; A cathode electrode provided with a gas supply source for supplying a reactive gas to the chamber region, the stem portion protruding toward the center of the chamber region, and a cathode electrode coupled to an inlet of the chamber region while maintaining a predetermined gap with the permanent magnet; And a ring-shaped anode electrode disposed outside the stem so as to have a predetermined potential difference with the cathode electrode while maintaining a predetermined gap with the cathode electrode.

In the gun type plasma etching apparatus according to the present invention, the gas supply source comprises: a gas injection port capable of injecting a reactive gas; And a plurality of gas discharge ports communicating with the injection port so as to inject the reactive gas into a gap between the cathode electrode and the anode electrode, and provided between the outer circumference of the stem portion and the anode electrode.

In the plasma plasma etching apparatus of the gun type according to the present invention, the plasma ion extracting means comprises: in order to close the outlet of the chamber region and to simultaneously withdraw the plasma ions from the chamber region, the center direction of the chamber region; A first grid member having a first screen pattern formed at a portion corresponding to the first grid member; And spaced apart from the first grid member at a predetermined interval so as to accelerate the plasma ions drawn out through the first screen pattern of the first grid member to the etching target, and a second portion at a portion corresponding to the first screen pattern. And a second grid member having a screen pattern formed thereon and connected to an extraction electrode capable of applying a potential relatively lower than that applied to the cathode electrode and the anode electrode.

The gun type plasma etching apparatus according to the present invention is configured to provide plasma ions extracted by the plasma ion extracting means to the etching target and to cool the plasma ions heated to a predetermined temperature. The cover member is further provided in close proximity.

A gun type plasma etching apparatus according to the present invention, the cover member includes: a cover plate which is selectively detachably installed in the housing and has a hole having a predetermined size through which plasma ions can be substantially extracted; A ring-shaped first cooling piece formed in the hole so as to cool the heat of the plasma ions primarily; And a plurality of cooling holes formed around the induction hole to secondaryly cool the plasma ions cooled by the first cooling piece, and an induction hole for inducing the plasma ions to an etching target. It has a second cooling piece that can be combined.

The plasma plasma etching apparatus of the gun type according to the present invention further includes a cooling unit provided outside the chamber region to substantially cool the temperature atmosphere in the chamber region.

In the plasma plasma etching apparatus of the gun type according to the present invention, the cooling unit comprises: a space portion formed on the outside of the chamber area; A water injection port capable of continuously injecting cooling water into the space; And a water discharge port capable of continuously discharging the cooling water injected into the space part.

The plasma plasma etching apparatus of the gun type according to the present invention further includes a cylindrical chamber container detachably attached to the chamber region.

In the gun type plasma etching apparatus according to the present invention, the chamber region is preferably provided with its center point eccentric with respect to the center point of the housing.

Therefore, the present invention does not need to replace the filament from time to time, which is convenient, and the structure is simple and easy to disassemble and assemble, significantly reducing the manufacturing cost of the equipment, and compatibility with a variety of micro-evaporation equipment It has its features.

Hereinafter, a gun type plasma etching apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is an exploded perspective view showing a gun type plasma etching apparatus according to a preferred embodiment of the present invention, Figure 2 is a cross-sectional view of the combined configuration of FIG.

Referring to FIGS. 1 and 2, the gun type plasma etching apparatus 100 according to an embodiment of the present invention is to etch surface electrodes of a predetermined etching target such as a crystal oscillator by generating / releasing plasma ions. Unlike the conventional plasma type etching apparatus 100, the filament for releasing hot electrons is excluded, and plasma is generated by interaction between an electric field and a magnetic field, and plasma ions are easily released to the surface electrode of the crystal oscillator. It has a structure that can be done.

For this purpose, the gun type plasma etching apparatus 100 includes a housing 10 having a chamber region 15 that can substantially generate plasma, and a reactive gas supplied to the chamber region 15 by a predetermined potential difference. Plasma generating means 30 capable of ionizing to generate plasma and activating plasma ions by a predetermined magnetic force, and plasma ions generated by the plasma generating means 30 can be extracted in a beam form to a predetermined etching target. A cover member 60 capable of easily inducing the plasma ion extracting means 50 and the plasma ions extracted by the plasma ion extracting means 50 to the etching target and cooling the plasma ions heated to a predetermined temperature; A cooling unit 70 capable of cooling the temperature atmosphere in the chamber region 15 is provided.

The plasma etching apparatus 100 of the present embodiment described below has a structure capable of etching an etching target by releasing plasma ions while being embedded in a predetermined vacuum container (not shown). The vacuum container is installed in a predetermined frame, and the frame is equipped with a vacuum system, an air system, an electronic system, a reactive gas supply system, a cooling water supply system, and the like for driving the apparatus 100. Each of these systems is also servo controlled by a control unit (not shown).

The housing 10 is open at both ends and has a cylindrical shape in which a hollow chamber region 15 is provided. The housing 10 is made of magnetic steel. The housing 10 is connected to a ground electrode 68. Is connected to ground.

The chamber region 15 is a space in which plasma is generated, and a cylindrical inner wall is formed along the longitudinal direction of the housing 10. The chamber region 15 has an outlet 13 on the front side with respect to the longitudinal direction of the housing 10 and an inlet 11 on the rear side.

FIG. 3 is a side view schematically illustrating a layout structure of the housing and the chamber region illustrated in FIG. 1.

1 to 3, the chamber region 15 is provided such that the center point A in the center direction thereof is eccentric with respect to the center point B in the center direction of the housing 10. Thus, the reason for forming the center point A of the chamber area 15 eccentric with respect to the center point B of the housing 10 is to make the external shape of this apparatus 100 as small as possible. That is, the smaller the outer size of the apparatus 100, the smaller the pumping time of the vacuum system for creating a vacuum atmosphere in the inner space of the vacuum container (not shown).

As shown in FIGS. 1 and 2, the chamber region 15 has a cylindrical shape having an outer diameter equal to its inner diameter and slides toward the inlet 11 through the outlet 13 of the chamber region 15. 15 is provided with a separate chamber container 20 that can be inserted or withdrawn. The chamber container 20 has a hollow structure, such as the chamber region 15, and has a cylindrical structure with open ends. The chamber vessel 20 is preferably made of non magnetic steel (nonmagnetic metal). The chamber vessel 20 means a plasma generating region in which plasma can be generated substantially. In other words, the plasma is not generated directly in the chamber region 15 but is generated in the internal space of the chamber container 20 separately inserted in the chamber region 15. As such, the reason why the separate chamber container 20 that can be inserted into or removed from the chamber area 15 is provided is that soot is formed on the inner wall of the chamber area 15 by the carbonization of the plasma during plasma generation. This is to prevent this because it is rather inconvenient to clean up the soot. That is, when the chamber container 20 is inserted into the chamber region 15 and plasma is generated in the inner region, soot generated in the inner wall of the chamber container 20 by drawing the chamber vessel 20 to the outside It can be cleaned easily.

The plasma generating means 30 forms a plasma in the chamber region 15 by the interaction of the electric and magnetic fields, and activates the plasma ions. The plasma generating means 30 is provided at the inlet 11 side of the chamber region 15. Plasma generating means 30 for this purpose is to seal the plurality of permanent magnets 31 radially installed on the inner wall of the inlet 11 side of the chamber region 15, and the inlet 11 of the chamber region 15 at the same time A cathode electrode 32 that can be coupled to the inlet 11 of the chamber region 15 while maintaining a predetermined gap with the permanent magnet 31, and a cathode electrode 32 while maintaining a predetermined gap with the cathode electrode 32; And an anode electrode 38 disposed close to the cathode electrode 32 so as to have a predetermined potential difference with the anode.

Each of the permanent magnets 31 is mounted in an installation groove 14 formed in the inner wall so as to surround the inner wall of the inlet 11 side of the chamber region 15.

FIG. 4 is a plan view schematically showing the arrangement structure of the permanent magnet shown in FIG. 1.

As shown in FIG. 4, the permanent magnet 31 has a ring shape having concentric circles as a whole, and preferably has six structures in which six pieces of magnets are continuously arranged along the concentric circles. The permanent magnet 31 has a magnetic force of about 4,000 gauss, and the N pole is arranged inside the concentric circle so as to form a line of magnetic force on the loop toward the center of the chamber region 15, and the S pole outside the concentric circle. Are arranged. In this way, the six magnet pieces are arranged in a ring shape so that the permanent magnets 31 are provided so that dead zones of the N pole and the S pole form a substantially circular shape so that an eccentric magnetic field is not formed. . As a result, the magnetic force of the permanent magnet 31 is uniformly distributed around the permanent magnet 31 to face the center direction of the chamber region 15. Here, the permanent magnet 31 may be a variety of magnetic materials such as rare earth magnet, ferrite magnet or alnico magnet. Therefore, the magnetic field formed by the permanent magnet 31 converts the electron orbit of the plasma generated by the potential difference between the cathode electrode 32 and the anode electrode 38 to be described later into a spiral orbit to activate plasma ions. That is, the magnetic field formed by the permanent magnet 31 detains the plasma distributed around the permanent magnet 31 to efficiently generate high density plasma ions (see FIGS. 1 and 2).

As shown in FIGS. 1 and 2, the cathode electrode 32 is a conductor to which a DC voltage V ₁ having a predetermined potential can be applied from a DC power supply, and at least a magnetic field formed by the permanent magnet 31. It is made of non-magnetic steel that does not interfere with it. The cathode electrode 32 is a cathode electrode 37 which can receive a DC voltage (V ₁ ) applied from the DC power supply is electrically connected to the DC power supply. The cathode electrode 32 is provided at its inlet 11 to close the inlet 11 of the chamber region 15 with the permanent magnet 31 installed on the inner wall of the inlet 11 side of the chamber region 15. It is coupled to, and disposed close to the concentric inner edge portion of the permanent magnet (31). The cathode electrode 32 is formed inside the concentric circle of the permanent magnet 31 while maintaining a predetermined gap with the cover 33 and the permanent magnet 31, which can substantially close the inlet 11 of the chamber region 15. A stem 35 inserted and integrally protruding in the cover body 33 along the center direction of the chamber region 15, and a stem integrally protruding in the coupling portion 35 along the center direction of the chamber region 15. The part 36 is provided. The cover body 33 is coupled to the edge portion of the inlet 11 of the chamber region 15, ie, the rear side of the housing 10, via a screw to seal the portion of the inlet 11 of the chamber region 15. do. To this end, a plurality of screw holes 34 are formed in the edge portion of the cover body 33 so that the screws can penetrate and engage the rear side of the housing 10. Similarly, it is obvious that a plurality of screw grooves are formed on the rear side of the housing 10 to which the screws can be coupled. In addition, the cathode electrode 37 penetrates the cover body 33 to be electrically connected to the coupling part 35. In addition, the cathode electrode 32 is provided with a gas supply source 40 capable of supplying a predetermined reactive gas to the chamber region 15.

1 and 2, the anode electrode 38 is a conductor to which a DC voltage V ₂ having a predetermined potential can be applied from a DC power supply, and at least a magnetic field formed by the permanent magnet 31. It is made of non-magnetic steel that does not interfere with it. The DC voltage V ₂ applied to the anode electrode 38 has a predetermined potential difference with the DC voltage V ₁ applied to the cathode electrode 32. Preferably, the DC voltage V ₂ applied to the anode electrode 38 is set relatively lower than the DC voltage V ₁ applied to the cathode electrode 32. The anode electrode 38 has an anode electrode 39 which can receive a DC voltage V ₂ applied from a DC power source, and is electrically connected to the DC power source. The anode electrode 39 penetrates the cover body 33 and the coupling part 35 simultaneously while being insulated from the cathode electrode 32 and is electrically connected to the anode electrode 38. The anode electrode 38 has a ring shape in which a hole 38a is drilled in the center portion thereof, and the stem portion 36 of the cathode electrode 32 is inserted through the hole 38a so that the cathode electrode 32 and a predetermined gap are formed. It is disposed outside of the stem portion 36 while maintaining. The anode electrode 38 has a structure that can be pin coupled while maintaining a predetermined gap with the coupling portion 35 of the cathode electrode 32. Therefore, when direct current voltages V ₁ and V ₂ are applied to each of the cathode electrode 32 and the anode electrode 38, the interface between the cathode electrode 32 and the anode electrode 38 is reduced. In a substantially direct electric field is formed. Such a direct current electric field causes discharge by a predetermined potential difference, thereby ionizing the gas supplied from the gas supply source 40, thereby generating plasma. The direct current field formed by the cathode electrode 32 and the anode electrode 38 is perpendicular to the magnetic field direction of the magnetic field formed by the permanent magnet 31.

5A and 5B are cross-sectional / planar diagrams showing the structure of the gas supply source shown in FIG.

As illustrated in FIGS. 5A and 5B, the gas source 40 described above includes a gas injection port 41 through which a reactive gas can be injected, and a cathode electrode 32 and an anode electrode 38 for reactive gas. It has a plurality of gas discharge port 43 that can be injected into the gap between the).

The gas injection port 41 is a portion capable of injecting reactive gas into the chamber region 15, and is provided in the cover body 33 of the cathode electrode 32. The gas injection port 41 is connected to a gas injection line 42 interconnected with a gas tank (not shown).

The gas discharge port 43 is for injecting substantially reactive gas into the gap between the cathode electrode 32 and the anode electrode 38. The gas discharge port 43 is in communication with the gas injection port 41 and is formed at the coupling portion 35 forming an interface with the stem portion 36, and is formed in the outer circumferential direction of the stem portion 36. More specifically, the gas discharge port 43 is radially multiplied by the center point of the chamber region 15 to the coupling portion 35 exposed through the gap between the stem portion 36 and the anode electrode 38. Is formed. Therefore, the reactive gas injected through the gas injection port 41 is injected into the gap between the cathode electrode 32 and the anode electrode 38 through the gas discharge port 43.

As such, the reason why the gas discharge port 43 is continuously formed in a circular shape along the outer circumferential direction of the stem portion 36 is to further increase the density of plasma ions distributed on the central side of the chamber region 15. . If the gas discharge port 43 is formed in the stem portion 36 as a single path communicating with the gas injection port 41, plasma ions are concentrated in the periphery of the chamber region 15 to increase the density. On the contrary, a phenomenon in which the density of plasma ions is lowered occurs in the center of the chamber region 15. Thus, the ion beam drawn out from the chamber region 15 is commonly referred to as donut or cavitation. By the donut phenomenon or the cavitation phenomenon, the ion beam drawn out from the chamber region 15 has the density of plasma ions distributed at its periphery relatively higher than the density of plasma ions distributed at the center, and thus has a uniform density as a whole. It is disadvantageous for drawing the beam. Here, the reactive gas applied to the apparatus 100 is an inert gas belonging to group 18 of the periodic table, and preferably argon (Ar) gas is used.

As shown in FIG. 1 and FIG. 2, the plasma ion extracting means 50 is provided on the outlet 13 side of the chamber region 15. The plasma ion extracting means 50 closes the outlet 13 of the chamber region 15 and at the same time the first grid member 51 for firstly extracting plasma ions from the chamber region 15 and the first grid. A second grid member 52 is provided for substantially accelerating the plasma ions drawn out through the member 51 to be drawn out to the etching target.

The first grid member 51 has a substantially disk shape, and a first screen pattern 53 is formed at a central portion of the disk, that is, a central portion corresponding to the central direction of the chamber region 15. The first grid member 51 is coupled to the outlet edge of the chamber region 15, ie, the front side of the housing 10, via a screw. To this end, a screw hole 55 is formed in the edge portion of the first grid member 51 to penetrate the screw and engage the edge portion of the outlet 13 of the chamber region 15. The first screen pattern 53 is formed such that a hole having a predetermined size is densely formed in the central portion of the first grid member 51. The size and number of the holes may be variously modified according to the extraction area of the plasma ion beam.

The second grid member 52 has substantially the same disk shape as the first grid member 51 and is spaced apart from the first grid member 51 by a predetermined interval. That is, the second grid member 52 is spaced by a predetermined interval by the insulator 56 provided between the first grid members 51 by the thickness of the insulator 56. In the second grid member 52, a second screen pattern 54 is formed at a center portion of the disk, that is, a portion corresponding to the first screen pattern 53 of the first grid member 51. The second grid member 52 is connected to a lead electrode 57 capable of applying a potential lower than the potential applied to the cathode electrode 32 and the anode electrode 38, that is, a negative potential. The second screen pattern 54 is formed such that a hole having a predetermined size is concentrated in the center portion of the second grid member 52, and the size and number of holes are the first screen pattern 53 of the first grid member 51. Is the same as The drawing electrode 57 is for applying a direct current voltage V ₃ having a negative potential from the direct current power source to the second grid member 52. The plasma electrode existing in the chamber area 15 is actuated by the action of an electric field. It acts to accelerate / draw to the outlet 13 side of the region 15. Unexplained reference numeral 58 is a portion capable of connecting the lead electrode 57 to the second grid member 52 and at the same time to couple the second grid member 52 to the front side of the housing 10. A connection portion protruded to be rounded by a predetermined width outward from the concentric circle of the grid member 52.

As shown in FIGS. 1 and 2, the cover member 60 is installed close to the plasma ion extracting means 50 and is located in front of the housing 10 corresponding to the outlet 13 of the chamber region 15. Is coupled to the side. The cover member 60 is spaced apart from the second grid member 52 by a predetermined thickness of the insulator 67 by a predetermined insulator 67 provided between the second grid members 52. The cover member 60 includes a cover plate 61 having a predetermined size hole 62 through which plasma ions can be substantially extracted, a first cooling piece 63 which can be coupled to the hole 62, and The second cooling piece 64 may be coupled to the first cooling piece 63.

The cover plate 61 is formed to be detachably installed at the front side of the housing 10 in which the above-described hole 62 is formed in the substantially center portion and the outlet 13 of the chamber region 15 is formed. . The cover plate 61 is connected to the ground via the ground electrode 68. Preferably, the cover plate 61 is made of magnetic steel (magnetic metal).

The first cooling piece 63 naturally guides the plasma ions extracted from the chamber region 15 by the plasma ion extracting means 50 toward the etching target, and simultaneously cools the unique heat of the plasma ions. will be. The first cooling piece 63 for this purpose is coupled to the hole 62 of the cover plate 61, and takes a ring shape with a hollow 63a. The first cooling piece 63 is generally made of an aluminum material having excellent thermal conductivity so as to absorb heat of plasma ions. Therefore, the plasma ions extracted by the plasma ion extracting means 50 pass through the hollow 63a of the first cooling piece 63, and the heat thereof is conducted to the first cooling piece 63 to be primarily cooled.

The second cooling piece 64 ultimately guides the plasma ions to the etching target and simultaneously cools the plasma ions primarily cooled by the first cooling piece 63. The second cooling piece 64 is coupled to the hollow 63a of the first cooling piece 63. In the second cooling piece 64, an induction hole 65 for drawing plasma ions into an etching target is formed at a central portion thereof, and a plurality of cooling holes 66 are formed in the induction hole (which can substantially disperse heat of plasma ions). 65 are formed radially around. The second cooling piece 64 is preferably made of a molybdenum material having a low sputter yield so that it can be used semi-permanently. Therefore, the plasma ions passing through the hollow 63a of the first cooling piece 63 pass through the induction hole 65 of the second cooling piece 64 to be substantially released as an etching target, and the heat of the plasma ions is cooled. It is distributed through the hole 66.

As shown in FIG. 2, the cooling unit 70 is for cooling the temperature atmosphere in the chamber region 15. The cooling unit 70 for this purpose is a space portion 71 formed outside the chamber region 15, a water injection port 72 for continuously injecting cooling water into the space portion 71, and a space portion 71. It is provided with a water discharge port 74 that can continuously discharge the cooling water injected into.

The space portion 71 is a cooling water circulation passage having a water-cooled structure, and has a predetermined inner space for forming an outer circumferential surface of the chamber region 15, and is formed along the outer circumferential surface of the chamber region 15.

The water injection port 72 is provided at the rear side of the housing 10 and communicates with the internal space of the space 71. The water injection port 72 is connected to a water injection line 73 interconnected with a cooling water supply tank (not shown). Accordingly, the coolant is injected into the internal space of the space portion 71 through the water injection port 72 by the pumping force of the predetermined pump, and circulates along the internal space of the space portion 71, and the inside of the chamber region 15. Cool the temperature atmosphere.

The water discharge port 74 is provided on the rear side of the housing 10 so as to be symmetrical with the water injection port 72, it is in communication with the internal space of the space portion 71. The water discharge port 74 is connected to a water discharge line 75 interconnected with a cooling water recovery tank (not shown). Accordingly, the coolant injected into the space portion 71 through the water injection port 72 cools the temperature atmosphere of the chamber region 15 while circulating along the space portion 71, and then the water is pumped by a pumping force of a predetermined pump. It is discharged to the outside through the discharge port 74.

Referring to the assembly sequence of the gun type plasma etching apparatus according to a preferred embodiment of the present invention configured as described above in detail.

As shown in Fig. 1 and Fig. 2, in order to assemble the device 100 of the present invention, six magnet pieces are first placed in an installation groove 14 formed in the inner wall of the inlet 11 side of the chamber region 15. Secure it firmly. At this time, the permanent magnet 31 is arranged in a ring shape with concentric circles, the N pole is arranged inside the concentric circle, and the S pole is arranged outside the concentric circle.

Next, the anode electrode 38 is pin-coupled to the coupling portion 35 of the cathode electrode 32 while the stem portion 36 of the cathode electrode 32 is inserted into the hole 38a of the anode electrode 38. . At this time, the anode electrode 38 is maintained in a predetermined gap with the cathode electrode 32, it is in a state that can be electrically connected to the DC power supply by the anode electrode (39).

Next, the coupling portion 35 of the cathode electrode 32 is inserted into the inlet 11 of the chamber region 15. Then, while the cover body 33 of the cathode electrode 32 is in close contact with the rear side of the housing 10, the cover body 33 is attached to the rear side of the housing 10, that is, the chamber region ( 15) to the edge of the inlet (11). Then, the coupling part 35 of the cathode electrode 32 maintains a predetermined gap with the permanent magnet 31, and the part of the inlet 11 of the chamber region 15 is completely sealed by the cover body 33. do. At this time, the coupling portion 35 of the cathode electrode 32 is in a state that can be electrically connected to the DC power supply by the cathode electrode (37).

The chamber vessel 20 is then inserted into the interior space of the chamber region 15 through the outlet 13 of the chamber region 15.

Next, the first grid member 51 is coupled to the edge portion of the outlet 13 of the chamber region 15, that is, the front side of the housing 10 using screws.

Subsequently, the insulator 56 is installed on the outer surface of the first grid member 51, and then the second grid member 52 is attached to the outer surface of the insulator 56. It is coupled to the front side of the housing (10). At this time, the first screen pattern 53 of the first grid member 51 and the second screen pattern 54 of the second grid member 52 are disposed to correspond to each other. The second grid member 52 is in a state in which the second grid member 52 can be electrically connected to the direct current power source by the lead electrode 57.

Next, the ring-shaped first cooling piece 63 having a hollow is coupled to the hole 62 of the cover plate 61, and the second cooling piece 64 is coupled to the hollow of the first cooling piece 63. After that, the cover plate 61 is coupled to the front side of the housing 10. At this time, a separate insulator 67 is provided between the cover plate 61 and the front side of the housing 10 to insulate the cover plate 61 and the housing 10 from each other.

Subsequently, a gas injection line 42 communicating with a gas tank (not shown) is connected to the gas injection port 41 of the gas supply source 40, and cooling water is supplied to the water injection port 72 of the cooling unit 70. Connect a water injection line communicating with a tank (not shown). Then, the water discharge port 74 is connected to the water discharge line 75 connected to the cooling water recovery tank (not shown). In addition, a predetermined lead connected to a direct current power source is connected to the cathode electrode rod 37, the anode electrode rod 39, and the lead electrode 57, and a ground wire is connected to the ground electrode 68 provided in the housing 10 and the cover member 60. Connect the ground wire to the ground.

The operation of the plasma etching apparatus according to the embodiment of the present invention assembled as described above will be described in detail with reference to the accompanying drawings.

Figure 6 is a cross-sectional view for explaining the operation of the gun type plasma etching apparatus according to a preferred embodiment of the present invention.

As shown in FIG. 6, first, the cathode electrode 32 is supplied with a DC voltage V ₁ having a predetermined potential from the DC power supply through the cathode electrode 37. The anode electrode 38 is supplied with a direct current voltage V ₂ having a predetermined potential difference from the direct current voltage V ₁ applied from the direct current power source to the cathode electrode 32 via the anode electrode 39. Here, the DC voltage V ₂ applied to the anode electrode 38 is controlled by a control unit (not shown) and is set relatively lower than the DC voltage V ₁ applied to the cathode electrode 32.

At the same time, the lead electrode 57 is supplied with a DC voltage V ₃ having a negative potential relatively lower than the potential applied to the cathode electrode 32 and the anode electrode 38 from the DC power supply.

Subsequently, the reactive gas is supplied to the gas injection port 41 through the gas injection line 42, and injected into the gap between the cathode electrode 32 and the anode electrode 38 through the plurality of gas discharge ports 43. .

Next, the cooling water is continuously supplied from the cooling water supply tank (not shown) to the water injection port 72 through the water injection line 73. Then, the coolant is discharged through the water discharge port 74 while circulating along the inner space of the space portion 71 and is recovered to the coolant recovery tank (not shown) along the water discharge line 75. Since the cooling action of such cooling water will be described later, a detailed description thereof will be omitted.

In the process of doing this, electrons emitted from the inner wall of the chamber vessel 20 or free electrons in the space are activated and accelerated by the strong magnetic field of the permanent magnet 31, and the cathode electrode 32 and the anode electrode 38 are accelerated. Is concentrated in the gap between the cathode electrode 32 and the anode electrode 38 by the potential difference {(V ₁ + V ₂ ) -V ₂ }.

Subsequently, particles of the reactive gas injected into the gap between the cathode electrode 32 and the anode electrode 38 through the free electrons and the gas discharge port 43 are transferred between the interface of the cathode electrode 32 and the anode electrode 38. Inelastic collisions in Then, as the outermost electrons of the gas particles are separated, the plasma of the neutral state in which the ions and the electrons of the gas particles are separated is generated in the chamber region 15. At this time, the chamber region 15 is heated to a predetermined temperature atmosphere by the collision of plasma ions. However, since the coolant is injected into the interior space of the space portion 71 through the water injection port 72 and is discharged through the water discharge port 74 while circulating along the interior space of the space portion 71, the chamber region. The internal temperature atmosphere of (15) is cooled to a constant temperature by cooling water.

In this state, the magnetic field formed by the permanent magnets 31 transforms the electron orbits contained in the plasma into helical orbits. That is, since the electric field direction of the direct current electric field formed by the cathode electrode 32 and the anode electrode 38 is maintained orthogonal to the magnetic field direction of the magnetic field formed by the permanent magnet 31, the electrons are separated from the electric field. The magnetic field is detained at orthogonal parts.

Subsequently, plasma ions are concentrated on the surface of the cathode electrode 32 and are activated in the chamber region 15 by the repulsive force of the N pole of the permanent magnet 31. At this time, since the gas discharge port 43 of the gas supply source 40 is continuously formed in a circular shape along the outer circumferential direction of the stem portion 36, the density of the plasma ions distributed on the center side of the chamber region 15. Will be increased further. Then, the plasma ions are distributed at a uniform density with respect to the peripheral portion and the central portion with respect to the central direction of the chamber region 15. That is, the donut phenomenon or the cavitation phenomenon in which the plasma ions are concentrated at the periphery of the chamber region 15 is increased, and the density of the plasma ions is decreased at the center of the chamber region 15.

Next, the plasma ions activated by the permanent magnet 31 pass through the first screen pattern 53 of the first grid member 51 in the form of a beam. The plasma ion beam passing through the first screen pattern 53 is accelerated by the second grid member 52 to which a negative potential relatively lower than the potential applied to the cathode electrode 32 and the anode electrode 38 is applied. Therefore, the plasma ion beam of the chamber region 15 is drawn out through the outlet 13 of the chamber region 15 via the second screen pattern 54 of the second grid member 52.

Subsequently, the plasma ion beam that has passed through the second grid member 52 is guided to the hollow 63a of the first cooling piece 63, and the unique heat of the plasma ions is transferred by the first cooling piece 63. It is cooled differentially.

Next, the ion beam passing through the hollow 63a of the first cooling piece 63 passes through the induction hole 65 of the second cooling piece 64 to be substantially released to the object to be etched, and the heat of plasma ions is cooled. Dispersed through the hole 66 and secondarily cooled.

Finally, the ion beam passing through the second cooling piece 64 is sputtered on the surface electrode of the etching target, for example, the crystal oscillator, to etch the electrode surface. Thus, the resonant frequency of the crystal oscillator is adjusted as desired according to the thickness and mass of the surface electrode etched by the ion beam.

On the other hand, as shown in Figure 1, when the above-described operation for a long time, soot generated by the carbonization action of the plasma is laminated on the inner wall of the chamber container 20 inserted into the chamber region 15. To remove the soot, the plasma ion extracting means 50 and the cover member 60 are separated from the housing 10, and then the chamber container 20 is moved outward through the outlet 13 of the chamber region 15. Draw out the soot.

As described above, the gun type plasma etching apparatus according to the preferred embodiment of the present invention has the following effects.

First, unlike conventional, it is not necessary to replace the filament at any time, convenient, simple structure, easy disassembly and assembly, and can greatly reduce the manufacturing cost of the equipment, it is compatible with a number of micro deposition equipment.

Second, since a plurality of gas discharge ports of the gas supply source are arranged in a circular shape, and plasma ions are uniformly distributed over the entire region of the chamber by the interaction of the electric and magnetic fields, the plasma ions that reach the etching target are consequently reached. The density of is uniform.

Third, since the inherent heat of the ion beam emitted to the etching object has a structure that can be naturally cooled by the cover member, it is advantageous for the etching operation of the heat-sensitive crystal oscillator.

Fourth, since the chamber container that can be selectively detached with respect to the chamber area is provided separately, soot generated on the inner wall of the chamber container can be easily removed by the carbonization action of the plasma.

Fifth, since the center point of the chamber area is disposed eccentrically with respect to the center point of the housing, it is possible to substantially reduce the appearance of the device.

Claims (10)

A housing having a chamber region capable of generating a plasma; Plasma generating means provided at an inlet side of the chamber region for generating a plasma by ionizing a reactive gas supplied to the chamber region by a predetermined potential difference and activating plasma ions by a predetermined magnetic force; And And a plasma ion extracting means provided at an exit side of the chamber region so as to extract plasma ions generated by the plasma generating means in a beam form with respect to a predetermined etching target. The method of claim 1, The plasma generating means is: A plurality of permanent magnets disposed radially on the inner wall of the inlet side of the chamber area; A cathode electrode provided with a gas supply source for supplying a reactive gas to the chamber region, the stem portion protruding toward the center of the chamber region, and a cathode electrode coupled to an inlet of the chamber region while maintaining a predetermined gap with the permanent magnet; And And a ring-shaped anode disposed outside the stem to maintain a predetermined gap with the cathode and to have a predetermined potential difference with the cathode. The method according to claim 1 or 2, The gas source is: A gas injection port capable of injecting a reactive gas; And The gun type is characterized in that it is in communication with the injection port so that the reactive gas can be injected into the gap between the cathode electrode and the anode electrode, a plurality of gas discharge ports provided between the outer periphery of the stem portion and the anode electrode Plasma Etching Equipment. The method of claim 1, The plasma ion extracting means is: A first grid member in which a first screen pattern is formed at a portion corresponding to the center direction of the chamber region to close the outlet of the chamber region and to simultaneously extract plasma ions from the chamber region; And In order to accelerate the plasma ions extracted through the first screen pattern of the first grid member to the etching target, the plasma screen is spaced apart from the first grid member by a predetermined distance, and the second screen is disposed at a portion corresponding to the first screen pattern. And a second grid member having a pattern formed thereon and connected to an extraction electrode capable of applying a potential relatively lower than the potential applied to the cathode electrode and the anode electrode. The method of claim 1, And a cover member provided to be close to the plasma ion extracting means, in order to easily guide the plasma ions extracted by the plasma ion extracting means to the etching target and to cool the plasma ions heated to a predetermined temperature. Gun type plasma etching apparatus. The method of claim 5, The cover member is: A cover plate selectively detachably installed in the housing and having a hole having a predetermined size through which plasma ions can be substantially extracted; A ring-shaped first cooling piece formed in the hole so as to cool the heat of the plasma ions primarily; And An induction hole capable of inducing the plasma ions to be etched, and a plurality of cooling holes formed around the induction hole to secondaryly cool the plasma ions cooled by the first cooling piece, and coupled to the cooling piece. Gun type plasma etching apparatus comprising a second cooling piece that can be. The method of claim 1, And a cooling unit provided outside the chamber area to substantially cool the temperature atmosphere in the chamber area. The method of claim 7, wherein The cooling unit is: A space portion formed outside the chamber area; A water injection port capable of continuously injecting cooling water into the space; And And a water discharge port capable of continuously discharging the cooling water injected into the space part. The method of claim 1, And a cylindrical chamber container selectively detachable from the chamber region. The method of claim 1, And the center of the chamber is eccentric to the center of the housing.