KR200310505Y1 - Frequency regulation apparatus for AT-cut quartz - Google Patents

Abstract

The present invention relates to a frequency adjusting device of the crystal oscillator, the frame; A vacuum container installed at an upper end of the frame; A ring type turret assembly is radially mounted so that the surface electrode can be exposed inwardly of the concentric circle, and is rotatably installed in the vacuum vessel to sequentially move the quartz crystal vibrator with respect to a predetermined working point. ; Plasma that is installed inside the turret assembly to correspond to the work point to generate plasma ions by the interaction of the electric and magnetic fields and to draw plasma ions in a beam form with respect to the surface electrode of the crystal oscillator moved to the work point. Ion source; And a connecting member connected to the outer side of the turret assembly so that the terminal pins of the crystal oscillator are connected to measure the frequency of the crystal oscillator while the surface electrode is etched by the plasma ion beam, so as to correspond to the working point. .

Description

Frequency regulator of crystal oscillator {Frequency regulation apparatus for AT-cut quartz}

The present invention relates to a frequency control device of a crystal oscillator, and more particularly, a crystal oscillator having a structure that can generate a plasma by interaction between an electric field and a magnetic field, and activate the plasma ions to easily discharge to the surface electrode of the crystal oscillator It relates to a frequency adjusting device of.

In general, the crystal oscillator is for generating a resonant frequency of the mobile communication device, the resonant frequency of the crystal oscillator is determined according to the thickness and mass of the surface electrode formed by a method such as deposition on the surface of the crystal piece. As a means for measuring the frequency of the crystal oscillator is used a frequency adjusting device capable of etching the surface electrode of the crystal oscillator to measure the frequency of the crystal oscillator that varies depending on the thickness and mass of the surface electrode.

Conventional frequency adjusting device of a crystal oscillator is a state in which a filament installed in a predetermined chamber is heated to radiate hot electrons, introducing a reactive gas into the chamber, ionizing the reactive gas by a predetermined potential difference to generate a plasma, plasma ion beam Is taken out to the surface electrode of the crystal oscillator, thereby providing a plasma ion source capable of etching the surface electrode of the crystal oscillator.

However, in the conventional crystal oscillator frequency adjusting device, high-precision filament is adopted as the plasma ion source, and the price of the overall etching equipment is increased. There is this. In addition, the conventional crystal oscillator frequency adjusting device is limited to the micro-evaporation facility in which the plasma ion source uses a turbo pump as a vacuum source, and is generally not employed in the micro-evaporation facility in which a diffusion pump is employed. There is a problem of incompatibility. In addition, in the conventional frequency adjuster of a crystal oscillator, when etching the surface electrode of the crystal oscillator while the crystal oscillator is continuously disposed, the surface electrode of the crystal oscillator with which the ion beam drawn from the plasma ion source reaches a predetermined working point. There is a problem that the overall yield of the crystal oscillator is lowered because it is applied to the surface electrode of the other crystal oscillator is not concentrated. In addition, the conventional crystal oscillator frequency adjusting device has a problem in that an electrical accident frequently occurs such that the measuring terminal is shorted due to overcurrent because an ion beam drawn from the plasma ion source is applied to a predetermined frequency measuring terminal. .

The present invention has been conceived to improve the above problems, it is not necessary to replace the filament from time to time, convenient, simple structure, easy to disassemble and assembly, can greatly reduce the manufacturing cost of equipment, To provide a frequency control device of a crystal oscillator having a structure that can generate plasma by the interaction of the electric and magnetic field to be compatible with the micro-deposition deposition equipment, and further activate the plasma ions to be easily released to the surface electrode of the crystal oscillator. The purpose is.

In addition, the present invention is to further improve the productivity and yield of the crystal oscillator, the frequency adjustment of the crystal oscillator having a structure that can focus the ion beam drawn from the plasma ion source to only a single crystal oscillator has reached a predetermined working point Another object is to provide a device.

In addition, the present invention is to adjust the frequency of the crystal oscillator having a structure that can prevent the ion beam drawn from the plasma ion source to be applied to the frequency measuring terminal in order to prevent the electrical accident of the frequency measuring equipment due to overcurrent in advance. Another object is to provide a device.

1 is a perspective view illustrating a frequency adjusting device of a crystal oscillator according to a preferred embodiment of the present invention.

2 is an exploded perspective view of FIG.

3 is a cross-sectional configuration of FIG.

4 is a cross-sectional configuration diagram specifically showing the main part of FIG.

5 is a plan view of FIG. 1.

6 is an exploded perspective view showing the structure of the plasma ion source shown in FIG.

7 is a cross-sectional view of the coupling cross-sectional view of FIG.

FIG. 8 is a side view schematically showing the arrangement of the housing and chamber regions shown in FIG. 6; FIG.

FIG. 9 is a plan view schematically illustrating a structure in which the permanent magnets of FIG. 6 are arranged; FIG.

10A and 10B are cross-sectional / planar views showing the structure of the gas supply source shown in FIG.

FIG. 11 is a side view of the mask member shown in FIG. 2; FIG.

FIG. 12 is a cross-sectional configuration diagram for describing the operation of the plasma ion source shown in FIG. 2. FIG.

<Description of the symbols for the main parts of the drawings>

10 ... housing 15 ... chamber area

20 ... chamber vessel 30 ... plasma generating means

31 ... permanent magnet 32 ... cathode electrode

39.Anode electrode 40 ... Gas source

50. Plasma ion extracting means 51 ... First grid member

52. Second grid member 60 ... Cover member

61 ... cover plate 63 ... 1st cooling plate

64 ... 2nd Cooling Piece 70 ... Cooling Unit

71 ... space 72 ... water injection port

74. Water discharge port 90 ... Crystal oscillator

91 Surface electrode 92a, 92b terminal pin

100 ... plasma ion source 110 ... frame

120 ... vacuum vessel 121 ... base member

126 ... suction member 127 ... cover member

130 ... turret assembly 131 ... ring member

132 ... mounting member 135 ... mounting member

140. Rotation / support 150 Mask member

155 ... distance adjusting member 160 ... connecting member

The present invention for achieving the above object, the frame; A vacuum container installed at an upper end of the frame; A ring type turret assembly is radially mounted so that the surface electrode can be exposed inwardly of the concentric circle, and is rotatably installed in the vacuum vessel to sequentially move the quartz crystal vibrator with respect to a predetermined working point. ; Plasma that is installed inside the turret assembly to correspond to the work point to generate plasma ions by the interaction of the electric and magnetic fields and to draw plasma ions in a beam form with respect to the surface electrode of the crystal oscillator moved to the work point. Ion source; And a connecting member connected to the outer side of the turret assembly so that the terminal pins of the crystal oscillator are connected to measure the frequency of the crystal oscillator while the surface electrode is etched by the plasma ion beam, so as to correspond to the working point. .

In the frequency adjusting device of the crystal oscillator according to the present invention, the vacuum container comprises: a base member is provided on the upper surface of the frame, the air suction hole of a predetermined size for the composition of the vacuum atmosphere; And a cover member which is packed at an edge of the base member to form a predetermined sealed space and is hinged to the base member.

In the frequency adjusting device of the crystal oscillator according to the present invention, the turret assembly includes: a ring member that can be rotated in a state spaced apart from the bottom surface of the vacuum container; Removably mounted to the ring member, a plurality of fixing units capable of radially fixing the crystal oscillator, and a plurality of surface electrodes of the crystal oscillator fixed to the fixing unit can be exposed in the center direction of the ring member. Mounting member provided with an exposed hole of; A mounting member disposed on the outside of the mounting member at predetermined intervals and having a plurality of mounting grooves to mount the terminal pins of the crystal oscillator; And rotating the ring member by a separation distance of the crystal oscillator and supporting the ring member so as to be spaced apart from the bottom surface of the vacuum chamber, and at the same time, to guide the rotation of the ring member. It is provided with rotation / support means.

In the frequency adjusting device of the crystal oscillator according to the present invention, the connecting member comprises: first and second connecting portion to which the first terminal pin and the second terminal pin of the crystal oscillator can be electrically connected to the working point; And a grounding portion provided between the first and second connecting portions so as to prevent the plasma ions extracted from the plasma ion source from being applied to the first and second connecting portions.

The frequency adjuster of the crystal oscillator according to the present invention, between the plasma ion source and the turret assembly in order to focus the plasma ion beam drawn from the plasma ion source to the surface electrode of the crystal oscillator reaching the working point limitedly It is provided, and further provided with a mask member provided with a single through hole through which the plasma ion beam can pass.

In the frequency adjusting device of the crystal oscillator according to the present invention, the rotation / support means: a gear groove formed along the inner peripheral surface of the ring member; A gear body rotatably installed on the bottom surface of the vacuum container so as to be engaged with the gear groove; A drive motor installed in the frame to rotate the gear body; And a guide groove formed along the outer circumferential surface of the ring member to guide the rotation of the ring member and simultaneously support the ring member so as to be spaced apart from the bottom surface of the vacuum container. It is provided with a guide roller that can be molded and rotated.

In the frequency control device of the crystal oscillator according to the present invention, the plasma ion source comprises: a housing having a chamber region capable of generating a plasma; Plasma generating means provided at an inlet side of the chamber region for generating a plasma by ionizing a reactive gas supplied to the chamber region by a predetermined potential difference and activating plasma ions by a predetermined magnetic force; And plasma ion extracting means provided at an outlet side of the chamber region so as to extract plasma ions generated by the plasma generating means in a beam form.

In the frequency control device of the crystal oscillator according to the present invention, the plasma generating means comprises: a plurality of permanent magnets radially installed on the inner wall of the inlet side of the chamber area; A cathode electrode provided with a gas supply source for supplying a reactive gas to the chamber region, the stem portion protruding toward the center of the chamber region, and a cathode electrode coupled to an inlet of the chamber region while maintaining a predetermined gap with the permanent magnet; And a ring-shaped anode electrode disposed outside the stem so as to have a predetermined potential difference with the cathode electrode while maintaining a predetermined gap with the cathode electrode.

In the frequency control device of the crystal oscillator according to the present invention, the gas supply source comprises: a gas injection port capable of injecting a reactive gas; And a plurality of gas discharge ports communicating with the injection port so as to inject the reactive gas into a gap between the cathode electrode and the anode electrode, and provided between the outer circumference of the stem portion and the anode electrode.

In the frequency adjusting device of the crystal oscillator according to the present invention, the plasma ion extracting means: to close the outlet of the chamber region and to simultaneously withdraw the plasma ions from the chamber region, the direction of the center of the chamber region A first grid member having a first screen pattern formed at a portion corresponding to the first grid member; And accelerated plasma ions drawn out through the first screen pattern of the first grid member, spaced apart from the first grid member by a predetermined distance, and a second screen pattern is formed at a portion corresponding to the first screen pattern. And a second grid member connected to an extraction electrode capable of applying a potential lower than a potential applied to the cathode electrode and the anode electrode.

The frequency adjusting device of the crystal oscillator according to the present invention, in order to easily guide the plasma ions extracted by the plasma ion extracting means toward the surface electrode of the crystal oscillator and to cool the plasma ions heated to a predetermined temperature, the plasma ions It further comprises a cover member installed in close proximity to the withdrawal means.

In the frequency control device of the crystal oscillator according to the present invention, the cover member comprises: a cover plate which is selectively detachably installed in the housing, the cover plate is formed with a hole of a predetermined size that can substantially withdraw plasma ions; A ring-shaped first cooling piece formed in the hole so as to cool the heat of the plasma ions primarily; And an induction hole capable of inducing the plasma ions to the surface electrode side of the crystal oscillator, and a plurality of cooling holes formed around the induction hole to secondaryly cool the plasma ions cooled by the first cooling piece. It has a second cooling piece that can be coupled to the cooling piece.

The frequency adjusting device of the crystal oscillator according to the present invention further includes a cooling unit provided on the outside of the chamber region to substantially cool the temperature atmosphere in the chamber region.

In the frequency adjusting device of the crystal oscillator according to the present invention, the cooling unit comprises: a space portion formed on the outside of the chamber area; A water injection port capable of continuously injecting cooling water into the space; And a water discharge port capable of continuously discharging the cooling water injected into the space part.

The frequency adjuster of the crystal oscillator according to the present invention further includes a cylindrical chamber container that is selectively removable in the chamber region.

In the frequency adjusting device of the crystal oscillator according to the present invention, the chamber region is preferably provided with its center point eccentric with respect to the center point of the housing.

Therefore, the present invention provides a plasma ion source capable of releasing plasma ions in the form of a beam by the interaction of an electric field and a magnetic field. Unlike the related art, the filament does not need to be replaced at any time. This feature is characterized by the ease and ease of manufacturing cost of the equipment, and the compatibility with various types of crude vapor deposition equipment.

In addition, the present invention has a structure in which the ion beam drawn from the plasma ion source can be focused only on a single crystal oscillator that has reached a predetermined working point, and thus, the productivity and yield of the crystal oscillator are improved. .

In addition, the present invention has a structure that can prevent the ion beam extracted from the plasma ion source to be applied to the frequency measuring terminal, the electrical accident of the frequency measuring equipment due to overcurrent is prevented in advance yet another feature There is this.

Hereinafter, with reference to the accompanying drawings the frequency adjusting device of the crystal oscillator according to a preferred embodiment of the present invention will be described in detail.

1 is a combined perspective view showing a frequency adjuster of a crystal oscillator according to a preferred embodiment of the present invention, Figure 2 is an exploded perspective view of Figure 1, Figure 3 is a cross-sectional configuration of FIG.

1 to 3, the frequency adjusting device 200 of the crystal oscillator according to an embodiment of the present invention, the frame 110, the vacuum vessel 120 installed on the frame 110, a plurality of crystal oscillators 90 is a radially mounted ring type turret assembly 130 rotatably installed in the vacuum vessel 120 to sequentially move the quartz crystal vibrator 90 with respect to a predetermined work point, And to generate plasma ions by interaction of the magnetic field and to draw plasma ions in a beam form with respect to the surface electrode 91 of the crystal oscillator 90 moved to the working point (FIG. 4). In order to concentrate the plasma ion source 100 installed inside and the plasma ion beam drawn out from the plasma ion source 100 only on the surface electrode 91 of the crystal oscillator 90 that has reached the working point. Frequency of the crystal oscillator 90 while the mask member 150 provided between the plasma ion source 100 and the turret assembly 130 and the surface electrode 91 of the crystal oscillator 90 are etched by the plasma ion beam. It is provided on the outside of the turret assembly 130 to measure the and has a connecting member 160 that can be electrically connected to the terminal pins (92a, 92b of Figure 4) of the crystal oscillator (90).

Here, the working point is a point where the surface electrode 91 (FIG. 4) of the crystal oscillator 90 (FIG. 4) can be substantially etched by the plasma ion beam drawn out from the plasma ion source 100. The position where the crystal vibrator 90 sequentially reaches the portion where the plasma ions are extracted from the plasma ion source 100 by the turret assembly 130 while the 100 is fixed.

As shown in Figures 1 to 3, the frame 110 is for supporting the entire component of the frequency adjuster 200 with respect to the ground. A frequency adjusting device 200 is installed on the upper surface of the frame 110, and various motors, a compressor, an air or hydraulic system, a vacuum system, an electronic system, etc. for driving the frequency adjusting device 200 are installed therein.

The vacuum container 120 has a predetermined sealed space and can form a vacuum in the sealed space, the base member 121 installed on the upper surface of the frame 110 and the cover hinged to the base member 121 The member 127 is provided.

The base member 121 has a disc table 122 provided on the top of the frame 110. An edge portion of the cover member 127 is packed at the edge of the disc table 122 to form a packing groove 123 to form a predetermined sealed space. In addition, the disc table 122 is provided with an air suction hole 124 for creating a vacuum atmosphere inside the vacuum vessel 120. The air intake hole 124 communicates with the internal space of the frame 110, and a mesh 124a for filtering a foreign matter sucked with air is installed. The air suction hole 124 is connected to the suction member 126 and the air suction line 125 to suck air in the vacuum container 120. The suction member 126 may suck the air in the vacuum container 120 through the air suction hole 124 to form a vacuum. The suction member 126 is controlled by a control unit, not shown, and its size is determined according to the working capacity of the vacuum vessel 120.

The cover member 127 is provided with a cover plate 128 that can be substantially packed to the edge portion of the disc table 122 to form a predetermined sealed space. The cover plate 128 is installed to be hinged with respect to the disc table 122, and has a structure in which the upper end is sealed and the lower end is opened. That is, the cover plate 128 has a cylindrical structure in which sidewalls of a predetermined height extend from the top edge of the disc shape. The lower edge of the cover plate 128 is provided with a packer 129 that is complementary to the packing groove 123 of the disc table 122. Accordingly, the vacuum container 120 may form a sealed space for creating a vacuum atmosphere as the packer 129 of the cover plate 128 is packed in the packing groove 123 of the disc table 122.

4 is a cross-sectional view illustrating in detail the main part of FIG. 3.

1 to 4, the turret assembly 130 radially rotates the ring member 131 and the plurality of crystal oscillators 90 rotatably installed with respect to the bottom surface of the vacuum container 120. The mounting member 132 detachably attached to the ring member 131 and the mounting member 132 so as to mount the terminal pins 92a and 92b of the crystal oscillator 90 mounted to the mounting member 132 to be fixed. Rotation / support means 140 that can support the rotation of the ring member 131 and at the same time rotate the mounting member 135 and the ring member 131 installed to the outside of the crystal oscillator 90 by the separation distance of the crystal oscillator 90 It is provided.

The ring member 131 has a strip-shaped cylindrical structure having both a predetermined thickness and a height and is open at both ends, and is installed to be spaced apart from the upper surface of the disc table 122 by the rotation / support means 140. In addition, the ring member 131 is continuously rotatable by the separation distance of the crystal oscillator 90 in a state spaced apart from the upper surface of the disk table 122 by the rotation / support means 140.

The mounting member 132 has a circular band-like structure having the same inner diameter as the inner diameter of the ring member 131, and is detachably installed on the upper edge portion of the ring member 131 via a screw. The mounting member 132 is provided with a plurality of fixing units 133 to fix the crystal oscillator 90 radially. The fixing unit 133 refers to a groove region continuously formed at a predetermined interval on the upper edge portion of the outer circumferential surface of the mounting member 132. The fixing unit 133 serves to support the crystal oscillator 90 not to flow by an external force. Each fixing unit 133 is formed with an exposure hole 134 for exposing the surface electrode 91 of the crystal oscillator 90 in the center direction of the ring member 131.

The mounting member 135 is disposed to be spaced apart from the outer peripheral surface of the mounting member 132 by a predetermined interval, and is coupled to the mounting member 132 via a screw. In the upper edge portion of the mounting member 135, when fixing the crystal oscillator 90 to the fixing unit 133, a mounting groove 136 for mounting the terminal pins (92a, 92b) of the crystal oscillator 90 is provided It is formed continuously. Therefore, when the crystal oscillator 90 is fixed to the fixing unit 133 of the mounting member 132, the surface electrode 91 of the crystal oscillator 90 is naturally exposed to the exposure hole 134 of the mounting member 132. The terminal pins 92a and 92b of the crystal oscillator 90 are naturally mounted to the mounting groove 136 of the mounting member 135.

The crystal oscillator 90 described above has a structure in which a surface electrode 91 of silver material is roughly deposited on a crystal piece 93 having a predetermined thickness, and receives a predetermined electrical signal with respect to the surface electrode 91. A pair of first and second terminal pins 92a and 92b capable of outputting are provided. If the crystal vibrator 90 is etched by the sputtering method in the state where the surface electrode 91 is roughly deposited, the frequency can be adjusted according to the thickness and mass of the surface electrode 91.

5 is a plan view of FIG. 1.

As shown in FIGS. 3 and 5, the rotation / support means 140 may allow the surface electrode 91 of the crystal oscillator 90 to sequentially reach the plasma ion extracting side of the plasma ion source 100. The ring member 131 is for continuously rotating by the separation distance of the crystal oscillator 90. In addition, the rotation / support means 140 is for supporting the ring member 131 so that the ring member 131 is rotated while being spaced apart from the upper surface of the disc table 122.

The rotation / support means 140 may include a gear groove 141 formed along an inner circumferential surface of the ring member 131, a gear body 142 that may be coupled to the gear groove 141, and a gear body 142. A drive motor 143 for rotating and a guide roller 145 for supporting the rotation of the ring member 131 while separating the ring member 131 from the upper surface of the disc table 122 are provided. The gear body 142 is provided to be spaced apart from the upper surface of the disk table 122 by a predetermined distance. The drive motor 143 is installed inside the frame 110, the rotation shaft 144 is connected to the central portion of the gear body 142, and is servo controlled by the control unit. The rotating shaft 144 protrudes from the inside of the frame 110 to the height corresponding to the gear groove 141 through the disc table 122. The guide roller 145 is provided on the outer side of the ring member 131, and is installed along the outer circumferential direction of the ring member 131 on the upper surface of the disc table 122. The guide roller 145 is provided to be spaced apart from the upper surface of the disc table 122 by a predetermined distance. The guide roller 145 is fitted to the guide groove 146 formed on the outer circumferential surface of the ring member 131 so that the ring member 131 is rotated while being spaced apart from the upper surface of the disc table 122. The guide roller 146 rotates while contacting the guide groove 146 when the ring member 131 is rotated by the gear body 142. Therefore, since the ring member 131 is joined to the guide groove 146 in a state where the guide roller 145 is spaced apart from the upper surface of the disc table 122, the disc table 122 is spaced by the distance of the guide roller 145. It can be rotated away from the upper surface of the). In addition, since the ring member 131 is rotated while the gear body 142 is engaged with the gear groove 141, the crystal vibrator 90 mounted to the mounting member 132 is moved to the plasma ion of the plasma ion source 100. It can be moved sequentially to the withdrawal side.

1 and 2, the plasma ion source 100 generates a plasma by interaction between an electric field and a magnetic field, and activates plasma ions to easily emit the surface to the surface electrode of the crystal oscillator. Have The plasma ion source 100 is fixed to the fixing bracket 170 installed in the inner region of the turret assembly 130 so that the portion from which the plasma ions are extracted may be located at the working point.

FIG. 6 is an exploded perspective view illustrating the structure of the plasma ion source shown in FIG. 2, and FIG. 7 is a cross-sectional view of the structure of FIG. 6.

6 and 7, the plasma ion source 100 includes a housing 10 having a chamber region 15 capable of generating plasma, and a reactive gas supplied to the chamber region 15 by a predetermined potential difference. Plasma generating means 30 which can be ionized by the plasma generating means and activate plasma ions by a predetermined magnetic force, and plasma ion extraction which can extract plasma ions generated by the plasma generating means 30 in a beam form. The plasma 50 heated at a predetermined temperature and easily guided to the surface electrode 91 (FIG. 4) of the crystal oscillator 90 (FIG. 4) by the means 50 and the plasma ion beam drawn by the plasma ion extracting means 50 A cover member 60 capable of cooling ions and a cooling unit 70 capable of cooling the temperature atmosphere in the chamber region 15 are provided.

The housing 10 is open at both ends, has a cylindrical shape with a hollow chamber region 15, and is made of magnetic steel (magnetic metal). The housing 10 is connected to ground via a ground electrode 68. The housing 10 is installed in the inner region of the ring member 131 and is fixed to the fixing bracket 170 provided on the upper surface of the disc table 122 (see FIGS. 1 and 2).

The chamber region 15 is a space where plasma is generated, and a cylindrical inner wall is formed along the longitudinal direction of the housing 10. The chamber region 15 has an outlet 13 on the front side with respect to the longitudinal direction of the housing 10 and an inlet 11 on the rear side.

FIG. 8 is a side view schematically illustrating an arrangement structure of the housing and the chamber region illustrated in FIG. 6.

6 to 8, the chamber region 15 is provided such that the center point A in the center direction thereof is eccentric with respect to the center point B in the center direction of the housing 10. Thus, the reason for forming the center point A of the chamber region 15 eccentrically with respect to the center point B of the housing 10 is to make the external shape of the plasma ion source 100 as small as possible. That is, the smaller the outer size of the plasma ion source 100 is, the smaller the pumping time for creating a vacuum atmosphere in the inner space of the vacuum container 120 (FIG. 3) can be minimized.

As shown in FIGS. 6 and 7, the chamber region 15 has a cylindrical shape having an outer diameter equal to the inner diameter thereof, and slides toward the inlet 11 through the outlet 13 of the chamber region 15 to the chamber region 15. In the 15, a separate chamber container 20 that can be inserted or withdrawn is installed. The chamber container 20 has a hollow structure, such as the chamber region 15, and has a cylindrical structure with open ends. The chamber vessel 20 is preferably made of non magnetic steel (nonmagnetic metal). The chamber vessel 20 substantially means a plasma generation region in which plasma can be generated. In other words, the plasma is not generated directly in the chamber region 15 but is generated in the internal space of the chamber container 20 separately inserted in the chamber region 15. As such, the reason why the separate chamber container 20 that can be inserted into or removed from the chamber area 15 is provided is that soot is formed on the inner wall of the chamber area 15 by the carbonization of the plasma during plasma generation. This is to prevent this because it is rather inconvenient to clean up the soot. That is, when the chamber container 20 is inserted into the chamber region 15 and plasma is generated in the inner region, soot generated in the inner wall of the chamber container 20 by drawing the chamber vessel 20 to the outside It can be cleaned easily.

The plasma generating means 30 forms a plasma in the chamber region 15 by the interaction of the electric and magnetic fields, and activates the plasma ions. The plasma generating means 30 is provided at the inlet 11 side of the chamber region 15. The plasma generating means 30 for this purpose is to seal the plurality of permanent magnets 31 radially installed on the inner wall of the inlet 11 side of the chamber region 15 and the inlet 11 of the chamber region 15. A cathode electrode 32 that can be coupled to the inlet 11 of the chamber region 15 while maintaining a predetermined gap with the permanent magnet 31, and a cathode electrode 32 while maintaining a predetermined gap with the cathode electrode 32; And an anode electrode 38 disposed close to the cathode electrode 32 so as to have a predetermined potential difference with the anode.

Each of the permanent magnets 31 is mounted in an installation groove 14 formed in the inner wall so as to surround the inner wall of the inlet 11 side of the chamber region 15.

FIG. 9 is a plan view schematically illustrating the arrangement structure of the permanent magnets shown in FIG. 6.

As shown in FIG. 9, the permanent magnet 31 has a ring shape having concentric circles as a whole, and preferably has six structures in which six pieces of magnets are continuously arranged along the concentric circles. The permanent magnet 31 has a magnetic force of about 4,000 gauss, and the N pole is arranged inside the concentric circle so as to form a line of magnetic force on the loop toward the center of the chamber region 15, and the S pole outside the concentric circle. Are arranged. In this way, the six magnet pieces are arranged in a ring shape so that the permanent magnets 31 are provided so that dead zones of the N pole and the S pole form a substantially circular shape so that an eccentric magnetic field is not formed. . As a result, the magnetic force of the permanent magnet 31 is uniformly distributed around the permanent magnet 31 to face the center direction of the chamber region 15. Here, the permanent magnet 31 may be a variety of magnetic materials such as rare earth magnet, ferrite magnet or alnico magnet. Therefore, the magnetic field formed by the permanent magnet 31 converts the electron orbit of the plasma generated by the potential difference between the cathode electrode 32 and the anode electrode 38 to be described later into a spiral orbit to activate plasma ions. That is, the magnetic field formed by the permanent magnet 31 detains the plasma distributed around the permanent magnet 31 to efficiently generate high density plasma ions (see FIGS. 6 and 7).

As shown in FIGS. 6 and 7, the cathode electrode 32 is a conductor to which a DC voltage V ₁ having a predetermined potential can be applied from a DC power supply, and at least a magnetic field formed by the permanent magnet 31. It is made of non-magnetic steel that does not interfere with it. The cathode electrode 32 is a cathode electrode 37 which can receive a DC voltage (V ₁ ) applied from the DC power supply is electrically connected to the DC power supply. The cathode electrode 32 is provided at its inlet 11 to close the inlet 11 of the chamber region 15 with the permanent magnet 31 installed on the inner wall of the inlet 11 side of the chamber region 15. It is coupled to, and disposed close to the concentric inner edge portion of the permanent magnet (31). The cathode electrode 32 is formed inside the concentric circle of the permanent magnet 31 while maintaining a predetermined gap with the cover 33 and the permanent magnet 31, which can substantially close the inlet 11 of the chamber region 15. A stem 35 inserted and integrally protruding in the cover body 33 along the center direction of the chamber region 15, and a stem integrally protruding in the coupling portion 35 along the center direction of the chamber region 15. The part 36 is provided. The cover body 33 is coupled to the edge portion of the inlet 11 of the chamber region 15, ie, the rear side of the housing 10, via a screw to seal the portion of the inlet 11 of the chamber region 15. do. To this end, a plurality of screw holes 34 are formed in the edge portion of the cover body 33 so that the screws can penetrate and engage the rear side of the housing 10. Similarly, it is obvious that a plurality of screw grooves are formed on the rear side of the housing 10 to which the screws can be coupled. In addition, the cathode electrode 37 penetrates the cover body 33 to be electrically connected to the coupling part 35. In addition, the cathode electrode 32 is provided with a gas supply source 40 capable of supplying a predetermined reactive gas to the chamber region 15.

6 and 7, the anode electrode 38 is a conductor to which a DC voltage V ₂ having a predetermined potential can be applied from a DC power supply, and at least a magnetic field formed by the permanent magnet 31. It is made of non-magnetic steel that does not interfere with it. The DC voltage V ₂ applied to the anode electrode 38 has a predetermined potential difference with the DC voltage V ₁ applied to the cathode electrode 32. Preferably, the DC voltage V ₂ applied to the anode electrode 38 is set relatively lower than the DC voltage V ₁ applied to the cathode electrode 32. The anode electrode 38 has an anode electrode 39 which can receive a DC voltage V ₂ applied from a DC power source, and is electrically connected to the DC power source. The anode electrode 39 penetrates the cover body 33 and the coupling part 35 simultaneously while being insulated from the cathode electrode 32 and is electrically connected to the anode electrode 38. The anode electrode 38 has a ring shape in which a hole 38a is drilled in the center portion thereof, and the stem portion 36 of the cathode electrode 32 is inserted through the hole 38a so that the cathode electrode 32 and a predetermined gap are formed. It is disposed outside of the stem portion 36 while maintaining. The anode electrode 38 has a structure that can be pin coupled while maintaining a predetermined gap with the coupling portion 35 of the cathode electrode 32. Therefore, when direct current voltages V ₁ and V ₂ are applied to each of the cathode electrode 32 and the anode electrode 38, the interface between the cathode electrode 32 and the anode electrode 38 is reduced. In a substantially direct electric field is formed. Such a direct current electric field causes discharge by a predetermined potential difference, thereby ionizing the gas supplied from the gas supply source 40, thereby generating plasma. The direct current field formed by the cathode electrode 32 and the anode electrode 38 is perpendicular to the magnetic field direction of the magnetic field formed by the permanent magnet 31.

10A and 10B are cross-sectional / planar diagrams showing the structure of the gas supply source shown in FIG.

As shown in FIGS. 10A and 10B, the gas source 40 as described above includes a gas injection port 41 through which a reactive gas can be injected, and a cathode electrode 32 and an anode electrode 38 for reactive gas. It has a plurality of gas discharge port 43 that can be injected into the gap between the).

The gas injection port 41 is a portion capable of injecting reactive gas into the chamber region 15, and is provided in the cover body 33 of the cathode electrode 32. The gas injection port 41 is connected to a gas injection line 42 interconnected with a gas tank (not shown).

The gas discharge port 43 is for injecting substantially reactive gas into the gap between the cathode electrode 32 and the anode electrode 38. The gas discharge port 43 is in communication with the gas injection port 41 and is formed at the coupling portion 35 forming an interface with the stem portion 36, and is formed in the outer circumferential direction of the stem portion 36. More specifically, the gas discharge port 43 is radially multiplied by the center point of the chamber region 15 to the coupling portion 35 exposed through the gap between the stem portion 36 and the anode electrode 38. Is formed. Therefore, the reactive gas injected through the gas injection port 41 is injected into the gap between the cathode electrode 32 and the anode electrode 38 through the gas discharge port 43.

As such, the reason why the gas discharge port 43 is continuously formed in a circular shape along the outer circumferential direction of the stem portion 36 is to further increase the density of plasma ions distributed on the central side of the chamber region 15. . If the gas discharge port 43 is formed in the stem portion 36 as a single path communicating with the gas injection port 41, plasma ions are concentrated in the periphery of the chamber region 15 to increase the density. On the contrary, a phenomenon in which the density of plasma ions is lowered occurs in the center of the chamber region 15. Thus, the ion beam drawn out from the chamber region 15 is commonly referred to as donut or cavitation. By the donut phenomenon or the cavitation phenomenon, the ion beam drawn out from the chamber region 15 has the density of plasma ions distributed at its periphery relatively higher than the density of plasma ions distributed at the center, and thus has a uniform density as a whole. It is disadvantageous for drawing the beam. Here, the reactive gas applied to the present plasma ion source 100 is an inert gas belonging to group 18 of the periodic table, and preferably argon (Ar) gas is used.

6 and 7, the plasma ion extracting means 50 is provided at the outlet 13 side of the chamber region 15. The plasma ion extracting means 50 closes the outlet 13 of the chamber region 15 and at the same time the first grid member 51 for firstly extracting plasma ions from the chamber region 15 and the first grid. A second grid member 52 for substantially accelerating the plasma ions drawn out through the member 51 is provided.

The first grid member 51 has a substantially disk shape, and a first screen pattern 53 is formed at a central portion of the disk, that is, a central portion corresponding to the central direction of the chamber region 15. The first grid member 51 is coupled to the outlet edge of the chamber region 15, ie, the front side of the housing 10, via a screw. To this end, a screw hole 55 is formed in the edge portion of the first grid member 51 to penetrate the screw and engage the edge portion of the outlet 13 of the chamber region 15. The first screen pattern 53 is formed such that a hole having a predetermined size is densely formed in the central portion of the first grid member 51. The size and number of the holes may be variously modified according to the extraction area of the plasma ion beam.

The second grid member 52 has substantially the same disk shape as the first grid member 51 and is spaced apart from the first grid member 51 by a predetermined interval. That is, the second grid member 52 is spaced by a predetermined interval by the insulator 56 provided between the first grid members 51 by the thickness of the insulator 56. In the second grid member 52, a second screen pattern 54 is formed at a center portion of the disk, that is, a portion corresponding to the first screen pattern 53 of the first grid member 51. The second grid member 52 is connected to a lead electrode 57 capable of applying a potential lower than the potential applied to the cathode electrode 32 and the anode electrode 38, that is, a negative potential. The second screen pattern 54 is formed such that a hole having a predetermined size is concentrated in the center portion of the second grid member 52, and the size and number of holes are the first screen pattern 53 of the first grid member 51. Is the same as The drawing electrode 57 is for applying a direct current voltage V ₃ having a negative potential from the direct current power source to the second grid member 52. The plasma electrode existing in the chamber area 15 is actuated by the action of an electric field. It acts to accelerate toward the outlet 13 side of the region 15. Unexplained reference numeral 58 is a portion capable of connecting the lead electrode 57 to the second grid member 52 and at the same time to couple the second grid member 52 to the front side of the housing 10. A connection portion protruded to be rounded by a predetermined width outward from the concentric circle of the grid member 52.

As shown in FIGS. 6 and 7, the cover member 60 is installed in close proximity to the plasma ion extracting means 50 and is located in front of the housing 10 corresponding to the outlet 13 of the chamber region 15. Is coupled to the side. The cover member 60 is spaced apart from the second grid member 52 by a predetermined thickness of the insulator 67 by a predetermined insulator 67 provided between the second grid members 52. The cover member 60 includes a cover plate 61 provided with a hole 62 which can easily guide plasma ions substantially toward the surface electrode 91 (FIG. 4) of the crystal vibrator 90 (FIG. 4), and the hole ( And a first cooling piece 63 that can be coupled to 62, and a second cooling piece 64 that can be coupled to the first cooling piece 63.

The cover plate 61 is formed to be detachably installed at the front side of the housing 10 in which the above-mentioned hole 62 is formed in a substantially central portion, and the outlet 13 of the chamber region 15 is formed. . The cover plate 61 is connected to the ground via the ground electrode 68. Preferably, the cover plate 61 is made of magnetic steel (magnetic metal).

The first cooling piece 63 naturally guides the plasma ions extracted from the chamber region 15 by the plasma ion extracting means 50 toward the surface electrode 91 (FIG. 4) of the crystal vibrator 90 (FIG. 4). At the same time, it is primarily for cooling the inherent heat of plasma ions. The first cooling piece 63 is coupled to the hole 62 of the cover plate 61 and has a ring shape having a hollow 63a. The first cooling piece 63 is generally made of an aluminum material having excellent thermal conductivity so as to absorb heat of plasma ions. Therefore, the plasma ions extracted by the plasma ion extracting means 50 pass through the hollow 63a of the first cooling piece 63, and the heat thereof is conducted to the first cooling piece 63 to be primarily cooled.

The second cooling piece 64 finally discharges plasma ions to the surface electrode 91 (Fig. 4) side of the crystal oscillator 90 (Fig. 4), and is primarily cooled by the first cooling piece 63. The secondary plasma ions are cooled secondarily. The second cooling piece 64 is coupled to the hollow 63a of the first cooling piece 63. The second cooling piece 64 is formed with an induction hole 65 for releasing plasma ions toward the surface electrode 91 of the crystal oscillator 90 at a central portion thereof, and the plurality of cooling ions 64 can disperse heat of plasma ions substantially. Cooling holes 66 are formed radially around the guide hole 65. The second cooling piece 64 is preferably made of a molybdenum material having a low sputter yield so that it can be used semi-permanently. Therefore, the plasma ion beam passing through the hollow 63a of the first cooling piece 63 passes through the induction hole 65 of the second cooling piece 64 substantially toward the surface electrode 91 of the crystal oscillator 90. At the same time as heat is released, heat of plasma ions is dispersed through the cooling holes 66.

As shown in FIG. 7, the cooling unit 70 is for cooling the temperature atmosphere in the chamber region 15. The cooling unit 70 for this purpose is a space portion 71 formed outside the chamber region 15, a water injection port 72 for continuously injecting cooling water into the space portion 71, and a space portion 71. It is provided with a water discharge port 74 that can continuously discharge the cooling water injected into.

The space portion 71 is a cooling water circulation passage having a water-cooled structure, and has a predetermined internal space for forming an outer circumferential surface of the chamber region 15, and is formed along the outer circumferential surface of the chamber region 15.

The water injection port 72 is provided at the rear side of the housing 10 and communicates with the internal space of the space 71. The water injection port 72 is connected to a water injection line 73 interconnected with a cooling water supply tank (not shown). Accordingly, the coolant is injected into the internal space of the space portion 71 through the water injection port 72 by the pumping force of the predetermined pump, and circulates along the internal space of the space portion 71, and the inside of the chamber region 15. Cool the temperature atmosphere.

The water discharge port 74 is provided on the rear side of the housing 10 so as to be symmetrical with the water injection port 72, it is in communication with the internal space of the space portion 71. The water discharge port 74 is connected to a water discharge line 75 interconnected with a cooling water recovery tank (not shown). Therefore, the coolant injected into the space portion 71 through the water injection port 72 cools the temperature atmosphere of the chamber region 15 while circulating along the space portion 71, and then the water is pumped by a pumping force of a predetermined pump. It is discharged to the outside through the discharge port 74.

As shown in FIGS. 1 to 4, the mask member 150 has a surface of the crystal oscillator 90 reaching the working point by the turret assembly 130 with the plasma ion beam drawn from the plasma ion source 100. The focus is only limited on the electrode 91. The mask member 150 includes a pair of support brackets 151 installed on the housing 10 of the plasma ion source 100, support rods 152 installed on the support brackets 151, and respective support rods ( And a mask plate 153 formed integrally with the 152 and disposed between the plasma ion extracting portion of the plasma ion source 100 and the inner circumferential surface of the mounting member 132. The mask plate 153 is only for the surface electrode 91 of the crystal oscillator 90 in which the plasma ion beam drawn from the plasma ion source 100 to the working point is exposed to the exposure hole 134 of the mounting member 132. A through hole 154 that can be limitedly passed is formed. In more detail, the mask plate 153 serves as a pan to prevent the plasma ion beam from being influenced by the surface electrode 91 of the other crystal oscillator 90 located outside the working point.

FIG. 11 is a side view illustrating the mask member shown in FIG. 2.

Referring to FIG. 11, the mask member 150 is a distance for selectively adjusting the position of the mask plate 153 within the separation distance between the plasma ion extracting portion of the plasma ion source 100 and the mounting member 132. The adjusting member 155 is installed. The distance adjusting member 155 has a long hole 157 formed along the length direction of each support rod 152, and an adjustment screw 156 that can be screwed to the support bracket 151 through the long hole 157. It is provided. Accordingly, when the adjusting screw 156 is loosened, the mask plate 153 is reciprocated between the plasma ion source 100 and the mounting member 132, and when the adjusting screw 156 is tightened, the mask plate 153 is positioned. Is fixed.

As shown in FIG. 4, the connection member 160 includes first and second connection portions through which the first terminal pin 92a and the second terminal pin 92b of the crystal oscillator 90 may be electrically connected. 161 and 162 and a grounding portion 163 provided between the first and second connecting portions 161 and 162 so as to prevent overcurrent from occurring in the first and second connecting portions 161 and 162 by plasma ions. The first and second connectors 161 and 162 are electrically connected to a control unit (not shown). The first and second connectors 161 and 162 have a structure that can be naturally connected to the first and second terminal pins 92a and 92b of the crystal oscillator 90 when the crystal oscillator 90 reaches the working point. . Therefore, while the surface unit 91 of the crystal oscillator 90 is etched, the control unit determines a predetermined electrical signal input and output through the first and second connectors 161 and 162 so that the surface electrode 91 is etched. The frequency of the crystal oscillator 90, which varies according to the measurement, is measured in real time. The ground portion 163 is connected to the ground by a predetermined ground line. The ground part 163 grounds the plasma ions applied to the first and second connectors 161 and 162 while the plasma ions are extracted from the plasma ion source 100 to the surface electrode 91 of the crystal oscillator 90. The ground portion 163 prevents the plasma ions drawn out to the surface electrode 91 of the crystal oscillator 90 from being applied to the first and second connectors 161 and 162, thereby shorting the first and second connectors 161 and 162. It plays a role in preventing electrical accidents.

Referring to the operation of the frequency adjuster of the crystal oscillator according to a preferred embodiment of the present invention configured as described above in detail.

1 to 5, first, a plurality of crystal oscillators 90 are fixed to the fixing unit 133 of the mounting member 132. Then, the crystal oscillator 90 is fixed to the fixing unit 133, the surface electrode 91 is exposed to the exposure hole 134, the first and second terminal pins (92a, 92b) of the mounting member 135 It is mounted on the mounting groove 136.

Subsequently, when the cover plate 128 is covered with the disc table 122, the space between the disc table 122 and the cover plate 128 is sealed.

Next, the suction member 126 is operated by the control unit. Then, air existing in the sealed space is sucked along the air suction line 125 and a vacuum atmosphere is created in the sealed space.

Subsequently, the drive motor 143 is controlled and driven by the control unit, and the gear body 142 is rotated by the drive of the drive motor 143, and at the same time, the ring member tooth engaged with the gear body 142 ( 131 is rotated by the separation distance of the crystal oscillator 90. At this time, the first and second terminal pins 92a and 92b of the crystal oscillator 90 are naturally connected to the first and second connecting portions 161 and 162 of the connecting member 160. Accordingly, the surface electrode 91 of the quartz crystal vibrator 90 fixed to the fixing unit 133 of the mounting member 132 and the plasma ion extracting portion of the plasma ion source 100 are exposed to the exposure hole 134. It is positioned exactly in the position facing.

FIG. 12 is a cross-sectional view illustrating the operation of the plasma ion source shown in FIG. 2.

As shown in FIG. 12, in the above-described state, the cathode electrode 32 is supplied with a DC voltage V ₁ having a predetermined potential from the DC power supply through the cathode electrode 37. The anode electrode 38 is supplied with a direct current voltage V ₂ having a predetermined potential difference from the direct current voltage V ₁ applied to the cathode electrode 32 from the direct current power source through the anode electrode 39. Here, the DC voltage V ₂ applied to the anode electrode 38 is controlled by a control unit (not shown) and is set relatively lower than the DC voltage V ₁ applied to the cathode electrode 32.

At the same time, the lead electrode 57 is supplied with a DC voltage V ₃ having a negative potential relatively lower than the potential applied to the cathode electrode 32 and the anode electrode 38 from the DC power supply.

Subsequently, the reactive gas is supplied to the gas injection port 41 through the gas injection line 42, and injected into the gap between the cathode electrode 32 and the anode electrode 38 through the plurality of gas discharge ports 43. .

Next, the cooling water is continuously supplied from the cooling water supply tank (not shown) to the water injection port 72 through the water injection line 73. Then, the coolant is discharged through the water discharge port 74 while circulating along the inner space of the space portion 71 and is recovered to the coolant recovery tank (not shown) along the water discharge line 75. Since the cooling action of such cooling water will be described later, a detailed description thereof will be omitted.

In the process of doing this, electrons emitted from the inner wall of the chamber vessel 20 or free electrons in the space are activated and accelerated by the strong magnetic field of the permanent magnet 31, and the cathode electrode 32 and the anode electrode 38 are accelerated. Is concentrated in the gap between the cathode electrode 32 and the anode electrode 38 by the potential difference {(V ₁ + V ₂ ) -V ₂ }.

Subsequently, particles of the reactive gas injected into the gap between the cathode electrode 32 and the anode electrode 38 through the free electrons and the gas discharge port 43 are transferred between the interface of the cathode electrode 32 and the anode electrode 38. Inelastic collisions in Then, as the outermost electrons of the gas particles are separated, the plasma of the neutral state in which the ions and the electrons of the gas particles are separated is generated in the chamber region 15. At this time, the chamber region 15 is heated to a predetermined temperature atmosphere by the collision of plasma ions. However, since the coolant is injected into the interior space of the space portion 71 through the water injection port 72 and is discharged through the water discharge port 74 while circulating along the interior space of the space portion 71, the chamber region. The internal temperature atmosphere of (15) is cooled to a constant temperature by cooling water.

In this state, the magnetic field formed by the permanent magnets 31 transforms the electron orbits contained in the plasma into helical orbits. That is, since the electric field direction of the direct current electric field formed by the cathode electrode 32 and the anode electrode 38 is maintained orthogonal to the magnetic field direction of the magnetic field formed by the permanent magnet 31, the electrons are separated from the electric field. The magnetic field is detained at orthogonal parts.

Subsequently, plasma ions are concentrated on the surface of the cathode electrode 32 and are activated in the chamber region 15 by the repulsive force of the N pole of the permanent magnet 31. At this time, since the gas discharge port 43 of the gas supply source 40 is continuously formed in a circular shape along the outer circumferential direction of the stem portion 36, the density of the plasma ions distributed on the center side of the chamber region 15. Will be increased further. Then, the plasma ions are distributed at a uniform density with respect to the peripheral portion and the central portion with respect to the center direction of the chamber region 15. That is, the donut phenomenon or the cavitation phenomenon in which the plasma ions are concentrated at the periphery of the chamber region 15 is increased, and the density of the plasma ions is decreased at the center of the chamber region 15.

Next, the plasma ions activated by the permanent magnet 31 pass through the first screen pattern 53 of the first grid member 51 in the form of a beam. The plasma ion beam passing through the first screen pattern 53 is accelerated by the second grid member 52 to which a negative potential relatively lower than the potential applied to the cathode electrode 32 and the anode electrode 38 is applied.

Subsequently, the plasma ion beam that has passed through the second grid member 52 is guided to the hollow 63a of the first cooling piece 63, and the unique heat of the plasma ions is transferred by the first cooling piece 63. It is cooled differentially.

Next, the ion beam passing through the hollow 63a of the first cooling piece 63 is emitted through the induction hole 65 of the second cooling piece 64, and heat of plasma ions is transferred through the cooling hole 66. It is dispersed and cooled secondarily.

Meanwhile, as shown in FIG. 4, the plasma ion beam emitted from the plasma ion source 100 passes through the through hole 154 of the mask plate 153.

Subsequently, the plasma ion beam passing through the through hole 154 of the mask plate 153 etches the surface electrode 91 of the crystal oscillator 90 that reaches the working point. At this time, the surface electrode 91 of the crystal oscillator 90 located outside the working point is not affected by the plasma ion beam by the mask plate 153. While the surface electrode 91 of the crystal oscillator 90 is etched, the plasma ions out of the surface electrode 91 are not applied to the first and second connection portions 161 and 162 of the connection member 160 and the ground portion 163 is provided. Grounded through.

In the process of doing this, the control unit determines the electrical signals input and output through the first and second connecting portions 161 and 162 of the connecting member 160, and is modified according to the thickness and mass of the surface electrode 91. The frequency of the vibrator 90 is measured in real time.

Next, when the frequency of the crystal oscillator 90 is consistent with the preset data, the control unit operates the rotation / support means 140 to rotate the ring member 131 again by the separation distance of the crystal oscillator 90. Then, the next crystal oscillator 90 reaches the plasma extraction portion of the plasma ion source 100, that is, the working point, and the surface electrode 91 of the crystal oscillator 90 is etched by the operation as described above. .

On the other hand, as shown in Figure 6, when the operation as described above for a long time, soot generated by the carbonization action of the plasma is laminated on the inner wall of the chamber container 20 inserted into the chamber region 15. To remove the soot, the plasma ion extracting means 50 and the cover member 60 are separated from the housing 10, and then the chamber container 20 is moved outward through the outlet 13 of the chamber region 15. Draw out the soot to remove it.

As described above, the frequency adjusting device of the crystal oscillator according to the preferred embodiment of the present invention has the following effects.

First, since a plasma ion source capable of emitting plasma ions in the form of a beam by the interaction of an electric field and a magnetic field is provided, it is not necessary to replace the filament from time to time, unlike conventional, convenient, simple structure, easy disassembly and assembly In addition, the manufacturing cost of the equipment can be greatly reduced, and it is compatible with many kinds of micro deposition equipment.

Second, since a plurality of gas discharge ports of the gas supply source are arranged in a circular shape, and plasma ions are uniformly distributed over the entire region of the chamber by the interaction of the electric and magnetic fields, the plasma ions that reach the etching target are consequently reached. The density of is uniform.

Third, since the intrinsic heat of the ion beam emitted to the surface electrode of the crystal oscillator can be substantially cooled, it is advantageous for the etching operation of the heat sensitive crystal oscillator.

Fourth, since the chamber container that can be selectively detached with respect to the chamber area is provided separately, soot generated on the inner wall of the chamber container can be easily removed by the carbonization action of the plasma.

Fifth, since the center point of the chamber area is disposed eccentrically with respect to the center point of the housing, it is possible to substantially reduce the appearance of the device.

Sixth, since the ion beam drawn out from the plasma ion source can be focused only on a single crystal oscillator reaching a predetermined work point, the productivity and yield of the crystal oscillator are improved.

Seventh, since the ion beam drawn out from the plasma ion source can be prevented from being applied to the frequency measuring terminal, an electrical accident of the frequency measuring equipment due to overcurrent is prevented in advance.

Claims (16)

frame; A vacuum container installed at an upper end of the frame; A ring type turret assembly is radially mounted so that the surface electrode can be exposed inwardly of the concentric circle, and is rotatably installed in the vacuum vessel to sequentially move the quartz crystal vibrator with respect to a predetermined working point. ; Plasma that is installed inside the turret assembly to correspond to the work point to generate plasma ions by the interaction of the electric and magnetic fields and to draw plasma ions in a beam form with respect to the surface electrode of the crystal oscillator moved to the work point. Ion source; And In order to measure the frequency of the crystal oscillator while the surface electrode is etched by the plasma ion beam, the terminal pin of the crystal oscillator is connected, and having a connection member provided outside the turret assembly so as to correspond to the working point. A frequency adjuster of a crystal oscillator characterized in that. The method of claim 1, The vacuum vessel is: A base member installed on an upper surface of the frame and provided with an air suction hole having a predetermined size for forming a vacuum atmosphere; And The frequency adjuster of the crystal oscillator, characterized in that it is provided in the edge portion of the base member so as to form a predetermined closed space, the cover member hinged to the base member. The method of claim 1, The turret assembly is: A ring member rotatable in a state spaced apart from the bottom surface of the vacuum container by a predetermined interval; Removably mounted to the ring member, a plurality of fixing units capable of radially fixing the crystal oscillator, and a plurality of surface electrodes of the crystal oscillator fixed to the fixing unit can be exposed in the center direction of the ring member. Mounting member provided with an exposed hole of; A mounting member disposed on the outside of the mounting member at predetermined intervals and having a plurality of mounting grooves to mount the terminal pins of the crystal oscillator; And Rotation provided on the bottom surface of the vacuum container to rotate the ring member by the separation distance of the crystal oscillator and to support the ring member to be spaced apart from the bottom surface of the vacuum vessel and to guide the rotation of the ring member. / Frequency-adjusting device, characterized in that it comprises a supporting means. The method of claim 1, The connecting member is: First and second connecting portions to which the first terminal pin and the second terminal pin of the crystal oscillator are electrically connected to the working point; And And a ground portion provided between the first and second connection portions so as to prevent the plasma ions extracted from the plasma ion source from being applied to the first and second connection portions. The method of claim 1, In order to focus the plasma ion beam drawn out from the plasma ion source to the surface electrode of the crystal oscillator reaching the working point in a limited manner, it is installed between the plasma ion source and the turret assembly, and can pass the plasma ion beam. And a mask member having a single through hole provided therein. The method of claim 3, The rotation / support means is: A gear groove formed along an inner circumferential surface of the ring member; A gear body rotatably installed on the bottom surface of the vacuum container so as to be engaged with the gear groove; A drive motor installed in the frame to rotate the gear body; And It is installed on the outside of the ring member so as to guide the rotation of the ring member and to support the ring member so as to be spaced apart from the bottom surface of the vacuum vessel, and is formed in the guide groove formed along the outer peripheral surface of the ring member And a guide roller capable of rotating the crystal oscillator. The method of claim 1, The plasma ion source is: A housing having a chamber region capable of generating a plasma; Plasma generating means provided at an inlet side of the chamber region for generating a plasma by ionizing a reactive gas supplied to the chamber region by a predetermined potential difference and activating plasma ions by a predetermined magnetic force; And And a plasma ion extracting means provided at an outlet side of the chamber region so as to extract plasma ions generated by the plasma generating means in a beam form. The method of claim 7, wherein The plasma generating means is: A plurality of permanent magnets disposed radially on the inner wall of the inlet side of the chamber area; A cathode electrode provided with a gas supply source for supplying a reactive gas to the chamber region, the stem portion protruding toward the center of the chamber region, and a cathode electrode coupled to an inlet of the chamber region while maintaining a predetermined gap with the permanent magnet; And And a ring-shaped anode disposed outside the stem so as to have a predetermined potential difference with the cathode while maintaining a predetermined gap with the cathode. The method according to claim 7 or 8, The gas source is: A gas injection port capable of injecting a reactive gas; And And a plurality of gas discharge ports provided in communication with the injection port so as to inject the reactive gas into the gap between the cathode electrode and the anode electrode, and provided between the outer circumference of the stem portion and the anode electrode. Frequency regulator. The method of claim 7, wherein The plasma ion extracting means is: A first grid member in which a first screen pattern is formed at a portion corresponding to the center direction of the chamber region to close the outlet of the chamber region and to simultaneously extract plasma ions from the chamber region; And In order to accelerate the plasma ions drawn out through the first screen pattern of the first grid member, the first grid member is spaced apart from the first grid member by a predetermined interval, and a second screen pattern is formed at a portion corresponding to the first screen pattern. And a second grid member connected to an extraction electrode capable of applying a potential lower than a potential applied to the cathode electrode and the anode electrode. The method of claim 7, wherein Further comprising a cover member provided in close proximity to the plasma ion extracting means, in order to easily guide the plasma ions extracted by the plasma ion extracting means to the surface electrode side of the crystal oscillator and to cool the plasma ions heated to a predetermined temperature. Frequency adjuster of the crystal oscillator, characterized in that. The method of claim 11, The cover member is: A cover plate selectively detachably installed in the housing and having a hole having a predetermined size through which plasma ions can be substantially extracted; A ring-shaped first cooling piece formed in the hole so as to cool the heat of the plasma ions primarily; And An induction hole capable of inducing the plasma ions to the surface electrode side of the crystal oscillator, and a plurality of cooling holes formed around the induction hole to secondaryly cool the plasma ions cooled by the first cooling piece, And a second cooling piece which can be coupled to the piece. The method of claim 7, wherein And a cooling unit provided outside the chamber area to substantially cool the temperature atmosphere in the chamber area. The method of claim 13, The cooling unit is: A space portion formed outside the chamber area; A water injection port capable of continuously injecting cooling water into the space; And And a water discharge port capable of continuously discharging the cooling water injected into the space part. The method of claim 7, wherein And a cylindrical chamber container selectively detachable from the chamber region. The method of claim 7, wherein And said chamber region is provided with its center point eccentric with respect to the center point of the housing.