KR200301157Y1 - Push-push dielectric resonator oscillator for increasing output power with an additional dielectric resonator - Google Patents
Push-push dielectric resonator oscillator for increasing output power with an additional dielectric resonator Download PDFInfo
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- KR200301157Y1 KR200301157Y1 KR20-2002-0029842U KR20020029842U KR200301157Y1 KR 200301157 Y1 KR200301157 Y1 KR 200301157Y1 KR 20020029842 U KR20020029842 U KR 20020029842U KR 200301157 Y1 KR200301157 Y1 KR 200301157Y1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
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Abstract
본 고안은 초고주파수대의 FET 및 BJT를 이용한 발진기의 2 차 고조파 출력전력을 증강시키고 기본주파수를 억압하는 푸시-푸시(Push-Push) 유전체공진기 발진회로에서 더 높은 출력전력특성을 보이도록 푸시-푸시 발진기의 전력결합기와 드레인 단자 사이에 DR(Dielectric Resonator:유전체공진기)을 첨가한 발진기구조에 관한 것이다. 본 고안은 초고주파수대에서 두개의 유전체공진기로 이루어지는 공진부와 능동소자로 구성된 능동부(Active Module)로 푸시-푸시 회로를 조성하여 기본주파수는 상쇄시키고 2차 고조파는 결합시키는 3단자 출력결합기로 구성되어 출력전력을 높일 수 있다.The present invention pushes the push-push to show higher output power characteristics in the push-push dielectric resonator oscillator circuit that augments the second harmonic output power of the oscillator using FET and BJT in the ultra high frequency band and suppresses the fundamental frequency. The present invention relates to an oscillator structure in which a dielectric resonator (DR) is added between a power combiner and a drain terminal of an oscillator. The present invention consists of a three-terminal output coupler that cancels the fundamental frequency and combines the second harmonic by forming a push-push circuit with an active module composed of two dielectric resonators and an active element in an ultra high frequency band. Can increase the output power.
Description
본 고안은 2차 고조파의 출력을 증강시킨 푸시-푸시(Push-Push) 발진기에 관한 것으로서, 보다 상세하게는 기본주파수의 전력을 억압하는 Push-Push 발진기에서 더 높은 출력 전력 특성을 보이도록 발진기의 전력결합기와 드레인/콜렉터 단자 사이에 DR(Dielectric Resonator)을 부가하므로 좀더 높은 출력전력 특성을 얻을수 있도록 하나의 유전체공진기를 추가 장착하여 출력을 증강시킨 초고주파 발진기에 관한 것이다.The present invention relates to a push-push oscillator with augmented output of second harmonic. More specifically, the push-push oscillator suppresses the power of the fundamental frequency. Since a DR (Dielectric Resonator) is added between the power combiner and the drain / collector terminal, the present invention relates to an ultra-high frequency oscillator in which an additional dielectric resonator is mounted to increase output power.
통상적으로 초고주파 발진기는 DC 전력을 초고주파수의 전력으로 변환시키는 회로이며 통신 및 레이다 등의 전체 시스템에 있어서 가장 기본적이고 필수적인 부품중의 하나로써 시스템의 IF신호를 만들거나 RF신호를 변·복조 할 때 효율과 안정성 확보에 가장 영향을 크게 미치는 회로이다.In general, an ultra-high frequency oscillator is a circuit that converts DC power into ultra high frequency power, and is one of the most basic and essential parts of the entire system such as communication and radar when making IF signals or modulating and demodulating RF signals of the system. This circuit has the greatest influence on securing efficiency and stability.
Push-Push DRO(Dielectric Resonator Oscillator)를 포함하는 모든 종류의 반도체 신호원에 대한 또 하나의 요구사항으로 좀더 좋은 위상잡음특성, 또는 좀더 높은 주파수 발생뿐만 아니라 좀더 높은 출력전력 생성이 요구되었는데, 특히 K-Band 이상에서 전계 효과 트랜지스터(Field Effect Transistor; 이하 FET라 칭한다)나 쌍극성 접합 트랜지스터(Bipolar Junction Transistor; 이하 BJT라 칭한다.)를 이용한 기본 주파수로 발진하는 발진기 제작이 쉽지 않다.Another requirement for all kinds of semiconductor signal sources, including push-push DRO (Dielectric Resonator Oscillator), required higher phase power, or higher frequency generation, as well as higher output power generation. It is not easy to manufacture an oscillator oscillating at a fundamental frequency using a field effect transistor (hereinafter referred to as a FET) or a bipolar junction transistor (hereinafter referred to as a BJT) above the band.
그런 동일한 FET 나 BJT 소자를 이용하면서 기본 주파수의 2배 주파수에서 동작하고, 비교적 개발이 용이한 Push-Push 회로기술을 이용하면 상용화된 FET나 BJT를 이용하여 K-Band이상에서도 발진기 설계와 제작이 가능하며 Push-Push 발진기는 높은 출력전력 및 낮은 위상잡음특성을 제공하여 많은 시스템에서 사용되고 있다.By using the same FET or BJT device and operating at twice the fundamental frequency, and using the push-push circuit technology, which is relatively easy to develop, oscillator design and fabrication can be made even over K-Band using commercially available FET or BJT. Push-push oscillators offer high output power and low phase noise, making them widely used in many systems.
도 1에 도시된 바와 같이, 지금까지의 Push-Push FET/BJT DRO 회로에서 제2차 고조파 발진조건을 얻기 위해 FET/BJT(30)의 두 개의 게이트/베이스 단(G/B)에 연결된 2개의 마이크로 스트립선로(10) 사이에 1개의 DR(20)을 사용하였다.As shown in FIG. 1, two connected to the two gate / base stages (G / B) of the FET / BJT 30 to obtain the second harmonic oscillation condition in the Push-Push FET / BJT DRO circuit up to now. One DR 20 was used between the two microstrip lines 10.
여기서 DR(20)은 2개의 기본주파수 신호를 게이트/베이스 단자(G/B)에서 180도 위상차로 반사시키고, 2개의 제2차 고조파 주파수신호는 동위상으로 강화시키는 기능을 가진다.Here, the DR 20 reflects two fundamental frequency signals by 180 degrees out of phase at the gate / base terminal G / B, and enhances two second harmonic frequency signals in phase.
이와 같은 종래의 Push-Push FET/BJT DRO는 2차 고조파의 주파수에서 출력전력 특성을 얻을 수 있었으나 좀 더 높은 출력전력을 얻으려는 요구사항이 있었다.The conventional push-push FET / BJT DRO has been able to obtain output power characteristics at the frequency of the second harmonic, but there is a requirement to obtain a higher output power.
따라서, 본 고안은 상기한 종래의 요구사항을 충족시키기 위한 것으로, 기본주파수를 억압하는 Push-Push 발진기에서 더 좋은 출력 전력 특성을 보이도록 발진기의 전력결합기와 드레인/콜렉터 단자 사이에 DR(Dielectric Resonator)을 부가하므로 좀더 높은 출력전력 특성을 얻을 수 있도록 한 유전체공진기를 이용하여 출력을 증강시킨 초주파수의 발진기(Microwave Oscillator)를 제공함에 그 목적이 있다.Therefore, the present invention is to meet the above-mentioned conventional requirements, and the DR (Dielectric Resonator) between the power combiner and the drain / collector terminal of the oscillator to have better output power characteristics in the push-push oscillator suppressing the fundamental frequency. The purpose of the present invention is to provide an ultra-high frequency oscillator (Microwave Oscillator) that uses a dielectric resonator to obtain higher output power characteristics.
도 1은 종래의 Push-Push FET/BJT DRO를 나타낸 회로도.1 is a circuit diagram showing a conventional Push-Push FET / BJT DRO.
도 2는 본 고안에 따른 Push-Push FET/BJT DRO를 나타낸 회로도.2 is a circuit diagram showing a Push-Push FET / BJT DRO according to the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
10 : 마이크로 스트립 선로 20, 50 : DR10: micro strip line 20, 50: DR
30 : FET/BJT 40 : BPF30: FET / BJT 40: BPF
60 : 전력결합기(POWER COMBINER) G/B : 게이트/베이스 단자60: POWER COMBINER G / B: Gate / base terminal
D/C : 드레인/콜렉터 단자D / C: Drain / collector terminal
상기한 목적을 달성하기 위한 본 고안에 따른 유전체공진기를 이용하여 출력을 증강시킨 초고주파 발진기는, FET/BJT의 두 개의 게이트/베이스 단에 연결된 2개의 마이크로 스트립선로 사이에 1개의 DR을 사용하여 제2차 고조파 발진조건을 얻는 초고주파 발진기(Push-Push FET DRO)에 있어서, 전력결합기와 드레인/콜렉터 단자 사이에 DR을 더 장착시켜 높은 출력전력 특성을 얻을 수 있도록 한 것을 특징으로 한다.In order to achieve the above object, the ultra-high frequency oscillator using the dielectric resonator according to the present invention has an enhanced output, using one DR between two microstrip lines connected to two gate / base stages of the FET / BJT. In the push-push FET DRO, which obtains the second harmonic oscillation condition, a DR is further installed between the power combiner and the drain / collector terminal to obtain a high output power characteristic.
이하, 첨부된 도면을 참조하여 본 고안의 바람직한 실시 예를 설명한다.Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the present invention.
도 2는 본 고안에 따른 Push-Push FET/BJT DRO를 나타낸 회로도로이다.Figure 2 is a circuit diagram showing a Push-Push FET / BJT DRO according to the present invention.
여기서, 도면부호 10은 마이크로 스트립 선로, 20 및 50은 DR, 30은 트랜지스터로서 FET 또는 BJT이고, 40은 BPF(BAND PASS FILTER), 60은 전력결합기(POWER COMBINER), G/B는 게이트/베이스 단자, D/C는 드레인/콜렉터 단자를 나타낸다.Here, reference numeral 10 is a micro strip line, 20 and 50 are DR, 30 is a FET or BJT as a transistor, 40 is a BAND (BAND PASS FILTER), 60 is a power combiner, G / B is a gate / base The terminal and D / C represent the drain / collector terminal.
도시된 바와 같이, 본 고안은 FET/BJT(30)의 두 개의 게이트/베이스 단(G/B)에 연결된 2개의 마이크로 스트립선로(10) 사이에 1개의 DR(20)을 사용하여 제2차 고조파 발진조건을 얻는 초고주파 발진기(Push-Push FET/BJT DRO)에 있어서, 전력결합기(60)와 드레인/콜렉터 단자(D/C) 사이에 DR(50)을 더 구비한다.As shown, the present invention employs a second order using one DR 20 between two microstrip lines 10 connected to two gate / base stages G / B of the FET / BJT 30. In the ultra-high frequency oscillator (Push-Push FET / BJT DRO) which obtains harmonic oscillation conditions, a DR 50 is further provided between the power combiner 60 and the drain / collector terminal D / C.
따라서, 본 고안은 초고주파수대에서 2개의 유전체공진기로 이루어지는 공진부와 능동소자로 구성된 능동부(Active Module)로 Push-Push회로를 구성하여 기본주파수는 상쇄시키고 2 차 고조파는 결합시키는 3단자 출력결합기로 구성된다.Therefore, the present invention consists of a push-push circuit composed of an active part consisting of a resonance part consisting of two dielectric resonators and an active element in an ultra high frequency band, and a three-terminal output coupler that cancels the fundamental frequency and couples the second harmonic. It consists of.
여기서, 공진부의 A-A'면에서 최대의 자기적 결합이 일어나도록 L1과 L2및 L3를 조절하였으며, L5는 충분한 부성저항을 얻을 수 있도록 개방 스터브를 이용하여 정합하였다.Here, L 1 and L 2 and L 3 were adjusted to maximize magnetic coupling on the A-A 'plane of the resonator, and L 5 was matched using an open stub to obtain sufficient negative resistance.
즉, FET/BJT(30)의 게이트/베이스 단(G/B)을 바라본 반사계수가 최대가 되도록 L5를 최적화하고, 공진기의 결합선로(10) 길이 L1과 L2및 L3를 조절함으로써 발진 주파수를 조절하였다.That is, L 5 is optimized to maximize the reflection coefficient viewed from the gate / base stage (G / B) of the FET / BJT 30, and the length L 1 and L 2 and L 3 of the coupling line 10 of the resonator are adjusted. By controlling the oscillation frequency.
따라서, FET 나 BJT의 초고주파대의 주파수 발생 한계를 뛰어넘어 mm-파를 FET 나 BJT 구조로 발생시킬 수 있으며 특히, 기본파를 억제하고 제2차 고조파의주파수에서 좀더 높은 출력전력 특성을 얻을 수 있는 발진기를 제작할 수 있으므로 통신, 방송, 센서, 레이더 등의 시스템에서 반도체신호원에 대한 요구사항인 좀더 높은 주파수를 발생시키는 회로생산을 가능하게 한다.Therefore, it is possible to generate mm-wave with FET or BJT structure beyond the frequency generation limit of FET or BJT, and especially to suppress fundamental wave and obtain higher output power characteristics at the frequency of second harmonic. The oscillator can be fabricated, enabling the production of circuits that generate higher frequencies, a requirement for semiconductor signal sources in systems such as communications, broadcasting, sensors, and radar.
이상에서는 본 고안의 바람직한 실시 예에 대하여 도시하고 또한 설명하였으나, 본 고안은 상기한 실시 예에 한정되지 아니하며, 청구범위에서 청구하는 본 고안의 요지를 벗어남이 없이 당해 본 고안이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변형 실시가 가능한 것은 물론이고, 그와 같은 변경은 기재된 청구범위 내에 있게 된다.In the above described and illustrated with respect to the preferred embodiment of the present invention, the present invention is not limited to the above-described embodiment, it is common in the field to which the present invention belongs without departing from the spirit of the present invention claimed in the claims. Various modifications can be made by those skilled in the art, and such modifications are intended to fall within the scope of the appended claims.
이상에서 설명한 바와 같이 본 고안에 따른 유전체공진기를 이용하여 출력을 증강시킨 초고주파 발진기에 의하면, FET 나 BJT의 초고주파대의 주파수에서 능동소자의 이득 발생 한계를 뛰어넘어 mm-파대의 신호를 FET 나 BJT 구조로 발생시킬 수 있는 효과를 얻을 수 있다. 특히, 기본파를 억제하고 제2차 고조파의 주파수에서 좀더 높은 출력전력 특성을 얻을 수 있는 발진기를 제작할 수 있으므로 통신, 방송, 센서, 레이더 등의 시스템에서 반도체신호원에 대한 요구사항인 좀더 높은 주파수를 발생시키는 회로생산을 가능하게 하는 효과가 있다.As described above, according to the ultra-high frequency oscillator of which the output is enhanced by using the dielectric resonator according to the present invention, the FET or BJT structure exceeds the gain generation limit of the active element at the frequency of the FET or BJT. The effect that can be generated can be obtained. In particular, since oscillators can be manufactured to suppress fundamental waves and obtain higher output power characteristics at the frequencies of the second harmonic, higher frequencies, which are requirements for semiconductor signal sources in systems such as communication, broadcasting, sensors, and radars, can be manufactured. There is an effect of enabling the circuit production to generate a.
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