KR20030095033A - Photo resist coating method - Google Patents

Abstract

PURPOSE: A method for coating photoresist is provided to be capable of reducing the volume of the photoresist and considerably decreasing coating time, for reducing fabrication cost and improving productivity. CONSTITUTION: A spinner equipment is used for coating a photoresist layer at the upper portion of a wafer(10). After aligning a PR(PhotoResist) nozzle(50) with a thinning agent nozzle(40), the wafer is located at the lower portion of the thinning agent nozzle for aligning the center portion of the wafer with that of the thinning agent nozzle. A thinning agent is coated at the upper portion of the wafer by using the thinning agent nozzle. A photoresist coating process is then carried out at the upper portion of the resultant structure.

Description

Photoresist coating method {PHOTO RESIST COATING METHOD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spinner (application / development) facility during a photo process, which is a semiconductor core process, and to a method of applying a photo resist (hereinafter referred to as PR) on a wafer.

The conventional static coating method is to apply a PR on a stationary wafer and to apply a PR on a wafer that is rotating rapidly. There is a method, such as the PR coating method is a method of rapidly rotating the wafer while applying the PR directly on the wafer in common. The data of the conventional static wafer application method as described above can be shown in Table 1 below.

STEP TIME (SEC) SPEED (R.P.M) ACCEL (RPM / SEC) DISPENSE ARM-1 ARM-2 One 2.0 0 10000 0 CENT HOME 2 1.5 0 10000 One CENT HOME 3 0.5 0 10000 0 CENT HOME 4 2.0 1000 10000 0 CENT HOME 5 25.0 HIGH RPM 10000 0 HOME HOME 6 2.0 1200 10000 0 HOME DISP1 7 1.0 1200 10000 13,21 HOME DISP1 8 5.0 1200 10000 13,21 HOME DISP2 9 1.0 1200 10000 13,21 HOME DISP1 10 5.0 2500 10000 0 HOME HOME 11 0.5 0 5000 0 HOME HOME

In the above method, when the amount of PR is less than or equal to 3 cc or less, the phenomenon of viscous PR does not spread evenly, and it does not overcome the step of the fine pattern on the wafer, which causes cracking at the edge of the wafer. In order to solve this problem, a thinner, which is a solvent such as PR, is first sprayed and the PR is spun while spinning the wafer. The pattern spreads evenly, overcoming the step difference.

However, even if the diluent is sprayed in advance, without proper adjustment of the pump device, a small amount of PR may be applied in a short time to cause a poor quality due to the uneven distribution on the wafer surface. Proper balance of application rate and amount is required.

In order to solve the problems in the above method, an average of 4 cc or more of PR per wafer was used, and the PR coating time was also consumed 45 sec, which lowered productivity and increased manufacturing costs.

Therefore, the present invention is to solve the problems described above is to apply a photoresist on the wafer with a small amount of photoresist (PR) and a photoresist coating method that can significantly reduce the application time to improve the cost and productivity In providing.

The present invention for achieving the above object is a method for applying a photoresist on a wafer in a spinner (spinner) equipment of a semiconductor manufacturing process, the center of the PR nozzle so as to maintain a constant distance from the center of the diluent nozzle and A first process of matching the center of the wafer to a lower portion of the center of the diluent nozzle, a second process of applying the diluent to the upper surface of the wafer through the diluent nozzle, and a photoresist on the diluent applied to the upper surface of the wafer It is characterized by consisting of a third process of coating.

1 is a block diagram of a photoresist coating nozzle of the present invention.

Figure 2 is a state of applying a diluent through the diluent nozzle of the present invention.

3 is a state in which PR is applied by the PR nozzle of the present invention.

<Description of the symbols for the main parts of the drawings>

10: Wafer 20: PR

30: diluent 40: diluent nozzle

50: PR nozzle

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a configuration diagram of a photoresist coating nozzle of the present invention, Figure 2 is a state diagram for applying a diluent through the diluent nozzle of the present invention, Figure 3 is a state diagram in which PR is applied by the PR nozzle of the present invention.

Referring to the configuration of the present invention with reference to FIGS. 1 to 3 as follows.

In the present invention, when the configuration of the nozzle for applying the photoresist on the wafer as shown in Figure 1, the diluent nozzle 40 and the PR nozzle 50 is installed on the upper portion of the wafer 10, the diluent nozzle 40 The distance between the center and the center of the PR nozzle 50 is installed so that a certain distance is maintained. The diluent nozzle 40 is located above the center of the wafer 10, the distance between the center of the diluent nozzle 40 and the center of the PR nozzle 50 is preferably having a distance of about 50 ~ 51mm.

The method of applying the photoresist on the semiconductor wafer by the diluent nozzle 40 and the PR nozzle 50 configured as described above will be described.

First, the upper surface of the wafer 10 to be coated onto the spindle (not shown) that provides rotational force to the wafer 10 is seated so as to face the diluent nozzle 40, and the center of the wafer 10 is the diluent nozzle. Make sure that it matches the center of (40).

When the center of the wafer 10 and the diluent nozzle 40 coincide with each other, the diluent 30 of the same series as the PR is sprayed on the upper surface of the wafer 10 through the diluent nozzle 40.

The diluent 30 is preferably thinner.

As such, when the diluent 30 is sprayed on the upper surface of the wafer 10, the diluent 30 is applied to the upper surface of the wafer 10 so that the surface tension on the surface of the wafer 10 is reduced by the highly volatile diluent 30. do.

As described above, while the thinner 30 is sprayed onto the surface of the wafer 10 and finely applied, the upper surface of the wafer 10 may be subjected to PR through the PR nozzle 50 while rotating the wafer 10 seated on the spindle at high speed. (Step 3)

When the PR is applied to the upper surface of the wafer 10 through this process, the surface of the wafer 10 is used even if a small amount of PR 20 is used by applying the PR 20 in a state where the surface tension is reduced by the diluent 30. The PR 20 can be applied evenly while overcoming the pattern step.

Data of the wafer coating method of the coating method of the present invention as described above is shown in Table 2 below.

STEP TIME (SEC) SPEED (R.P.M) ACCEL (RPM / SEC) DISPENSE ARM-1 ARM-2 One 1.0 0 10000 DISP1150mm / s HOME150mm / s 2 1.5 0 10000 9 DISP1150mm / s HOME150mm / s 3 1.0 2000 10000 CENTER150mm / s HOME150mm / s 4 1.5 4000 10000 One CENTER150mm / s HOME150mm / s 5 1.0 2000 10000 CENTER150mm / s HOME150mm / s 6 15.0 HIGH RPM 10000 HOME150mm / s DISP1150mm / s 7 5.0 1200 10000 HOME150mm / s DISP1150mm / s 8 1.0 1200 10000 13,21 HOME150mm / s DISP1150mm / s 9 5.0 1200 10000 13,21 HOME150mm / s DISP2150mm / s 10 1.0 1200 10000 13,21 HOME150mm / s DISP1150mm / s 11 5.0 2000 10000 HOME150mm / s HOME150mm / s

ARM-1: DISP1 = Wafer Center Position of RRC Nozzle

DISP1 = CENTER-50mm (distance between PR nozzle and RRC nozzle)

DISPENSE: 1.2.3 = PHOTO RESIST 1.2.3, DISPENSE: 9 = RRC nozzle (THINNER)

DISPENSE: 13 = EBR (SIDE RINSE) DISPENSE: 13 = BACK RINSE

In spinner (application / development) equipment during photo process

According to the method of the present invention for applying a photoresist on the wafer 10, the method of displacing more than about 4cc of PR per wafer per wafer can be improved, which enables the application of a significantly smaller amount of 0.7cc and the required time of about 45 seconds or more. To 35 seconds to reduce costs and maximize productivity.

In addition, the pump method has a volume of 0.7ml, the distribution rate is 0.5ml / sec, the distribution acceleration is 10ml / sec ² , the distribution deceleration is 0ml / sec ² , the reload rate is 0.5ml / sec, calibration = 1.00, and the A / V connection delay time is 0.0 sec, which is shown in Table 3 below.

① Dispense amount: 0.7 ml ② Dispense rate: 0.5 ml / sec ③ Dispense acceleration: 10 ml / sec² ④ Dispense deceleration: 0 ml / sec² ⑤ Reload rate: 0.5 ml / sec⑥ Calibration: 1.00⑦ A / V close delay time: 0.0sec

Meanwhile, in the detailed description of the present invention, specific embodiments have been described, but it will be apparent to those skilled in the art that various modifications are possible without departing from the scope of the present invention.

As described above, the present invention relates to a method of applying photoresist onto a wafer in a spinner (application / development) facility during a photolithography process, which is a semiconductor core process. It is possible to apply in a significantly small amount of 0.7cc and to reduce the time required for more than about 45 seconds to 35 seconds has the advantage of reducing the cost and maximize the productivity.

Claims (3)

A method of applying photoresist onto a wafer in a spinner facility of a semiconductor manufacturing process, wherein the center of the PR nozzle is positioned so that a proper distance from the center of the diluent nozzle is maintained, and the center of the wafer is below the center of the diluent nozzle. And a second process of applying a diluent to an upper surface of the wafer through the diluent nozzle, and a third process of applying a photoresist on the diluent applied to the upper surface of the wafer. Photoresist application method. The method of claim 1, And a distance between the center of the diluent nozzle and the center of the PR nozzle is maintained at 50 to 51 mm. The method of claim 1, The thinner is a thinner photoresist coating method, characterized in that.