V 4 5 1 3 3 1 五、發明說明（υ 本發明係有關一種塗佈方法，特別有關於一種用於高 黏滞度（high-viscosity)材料的塗饰方法。 在半導體製程t ’具有高黏滯度的液態材料如：用來 作為罩幕之光阻、用來作為保護層之聚酿亞胺 (polyimide，PI)、或是旋塗式玻璃（spin_〇n_gUss， S0G) ’大都採用旋轉塗佈（spin - coating or spin-dispensing)的方式來進行。當晶片旋轉之後，噴壤 在晶片表面上的液態材料會因離心力而往晶片的周邊移 動’使液態材料達到均勻分佈（dispense)的效果。不 過，在實際操作上’液態材料的厚度與均勻性會受到許多 可變因素的影響’如：旋轉速度、旋轉時間、加速度、嘴 塗技術、喷塗時間以及液態材料的表面張力、黏滯度等 等’如果無法將這些因素控制在最適狀態下，塗佈在晶片 表面上的液態材料層會產生許多缺陷（defect)，像是周邊 與中心位置之厚度不均勻或是條紋（striat ions)缺陷等β 一般而言，為了使塗佈製程達到均勻分佈的效果，可 以研發各種塗佈裝置，例如：美國專利第5, 020, 200號、 第5, 02 0, 200號以及第5, 479, 91 2號中所揭示的喷嘴設計改 良，也可以調整旋轉塗佈製程的旋轉步驟◎請參考第1 圖，第1圖係顯示習知塗佈裝置10的示意圖。習知塗佈裝 置10包含有一可旋轉的夾盤（rotatable spin chuck)12， 可以用來固定並旋轉一晶片18，一喷嘴14係用來向下喷塗 一高黏滯度材料於晶片18表面16上，以及一控制器20用來 控制塗佈製程的旋轉速度、旋轉時間、加速度以及喷塗時V 4 5 1 3 3 1 V. Description of the Invention (υ) The present invention relates to a coating method, and particularly to a coating method for a high-viscosity material. The semiconductor process t 'has a high Viscosity liquid materials such as: photoresist used as a mask, polyimide (PI) used as a protective layer, or spin-on glass (spin_〇n_gUss (S0G)) are mostly used Spin-coating or spin-dispensing is performed. After the wafer is rotated, the liquid material sprayed on the surface of the wafer will move to the periphery of the wafer due to centrifugal force, so that the liquid material is uniformly distributed. However, in practice, 'the thickness and uniformity of liquid materials are affected by many variables' such as: rotation speed, rotation time, acceleration, nozzle coating technology, spraying time, and surface tension of liquid materials, Viscosity, etc. 'If these factors cannot be controlled in an optimal state, the liquid material layer coated on the surface of the wafer will produce many defects, such as the periphery and the center. Β, such as uneven thickness or stripe ions, etc. In general, in order to achieve a uniform distribution of the coating process, various coating devices can be developed, for example: US Patent No. 5,020,200, No. 5 No. 02, No. 200, No. 5, No. 5, 479, 91 No. 2 improved nozzle design, can also adjust the rotation steps of the spin coating process ◎ Please refer to Figure 1, which shows a conventional coating device A schematic view of 10. The conventional coating device 10 includes a rotatable spin chuck 12 which can be used to fix and rotate a wafer 18, and a nozzle 14 is used to spray a highly viscous material downward. On the surface 16 of the wafer 18, and a controller 20 is used to control the rotation speed, rotation time, acceleration and coating time of the coating process.
第4頁 45 13 31 五、發明說明（2) 請參考第2圖與第1表，第2圈係顯示習知塗佈製程的 剖面示意圖，第1表係顯示習知塗佈製程的步称。習知塗 佈製程是先於靜止狀態下的晶片18表面上進行第一次噴塗 一預定量之高黏滯度材料22，然後以固定的加速度將晶片 18的旋轉速度增加至300 r pm，並同時開始喷塗預定量之材 料22。在持續加速旋轉晶片18的過程中，先於3 OOrpm轉速 下維持10秒鐘並進行第二次噴塗，再於5 0 Orpm轉速下維持 6秒鐘並進行第三次喷塗’最後於800rpm轉速下維持5秒鐘 並進行第四次喷塗。如此一來，高黏滯度材料2 2的分佈情 形如第2A圖所示，高黏滯度材料22大多集中在晶片18中心 部分，而因離心力而往晶片18周邊移動的材料22高度則相 對凸起β接下來如第2B圈所示’停止喷塗高黏滯度材料 22，仍持續以固定的加速度持績加速旋轉晶片18，先於 120 Orpm轉速下維持8秒鐘’再加速至主要的製程轉速維持 25秒鐘》後續於持續減速旋轉晶片1 8的情況下，塗佈裝置 10會在晶片18周邊喷灑清潔液’便完成塗佈製程。Page 4 45 13 31 V. Description of the invention (2) Please refer to Figure 2 and Table 1. The second circle shows a schematic cross-sectional view of the conventional coating process. The first table shows the steps of the conventional coating process. . The conventional coating process is to spray a predetermined amount of high-viscosity material 22 for the first time on the surface of the wafer 18 in a stationary state, and then increase the rotation speed of the wafer 18 to 300 r pm with a fixed acceleration, and At the same time, a predetermined amount of the material 22 is sprayed. In the process of continuously accelerating the rotation of the wafer 18, the first spray is maintained for 10 seconds at a speed of 3,000 rpm and a second spray is performed, and then the second spray is maintained for 6 seconds at a speed of 500 rpm, and finally the speed is 800 rpm Hold for 5 seconds and perform the fourth spray. In this way, the distribution of the high-viscosity material 22 is shown in Figure 2A. Most of the high-viscosity material 22 is concentrated in the center of the wafer 18, and the height of the material 22 that moves toward the periphery of the wafer 18 due to centrifugal force is relatively high. As shown in circle 2B, the protrusion β then “stops spraying the high-viscosity material 22 and continues to accelerate the rotation of the wafer 18 with a fixed acceleration performance, and first maintains it at 120 Orpm for 8 seconds” and then accelerates to the main The process speed is maintained for 25 seconds. "In the case of continuously decelerating and rotating the wafer 18, the coating device 10 sprays a cleaning liquid around the wafer 18 to complete the coating process.
第5頁 451331 五、發明說明（3) 表1 步味 時《(秒) 幃速(ipm) 加速度 喷塗请形 倩1主 1 1 0 0 無 2 S 0 0 噴塗材料 喰|材料 3 10 300 5000 喰塗材料 4 6 500 5000 嘖塗材料 5 5 800 5000 喰重材料 6 8 1200 5000 無 7 25 m 5000 義 主要轉速 8 0.5 2000 5000 喰塗清潔液 周邊清潔 9 0.5 1500 5000 喰蚩清潔液 10 1 1000 5000 囔塗清潔液 11 10 600 5000 喷塗清潔液 12 5 1100 5000 無 由於在第二次至第四次喷塗的過程中，晶片18以 300〜800rpm的轉速持續加速旋轉違21秒之多，因離心力而 往晶片18周邊移動的材料22會產生過高之凸起，因此在尚 未進行主要的製程轉速之前，喷塗在晶片18表面上的材料 22已經出現相當不均勻的分佈情形。而且，在停止喷塗之 後，晶片18仍持續加速以1 200rpm轉速旋轉達8秒之多，會 使得原本凸起之材料2 2被過度拉甩至晶片18的邊緣處，這 不但會產生厚度不均勻的現象，在晶片18邊緣處被圍住的 氣泡還會形成條紋缺陷。也因此，習知技術必須額外增加 〔 材料22的噴塗量’以盡量彌補厚度不均勻或是缺陷的部 分，這對於需要進行大量喷塗之半導體製程而言，不僅無 法改善塗佈製程的分佈均句性，還會耗费昂貴的製程成Page 5 451331 V. Description of the invention (3) Table 1 Step-by-step "(seconds) 帏 Speed (ipm) Acceleration spraying please shape 1 Main 1 1 0 0 None 2 S 0 0 Spraying material 喰 | Material 3 10 300 5000 Coating material 4 6 500 5000 Coating material 5 5 800 5000 Heavy material 6 8 1200 5000 Without 7 25 m 5000 Meaning Main speed 8 0.5 2000 5000 Coating cleaning liquid Peripheral cleaning 9 0.5 1500 5000 Cleaning liquid 10 1 1000 5000 Spray cleaning fluid 11 10 600 5000 Spray cleaning fluid 12 5 1100 5000 No. During the second to fourth spraying process, the wafer 18 is continuously accelerated and rotated at a speed of 300 to 800 rpm for 21 seconds. Due to the centrifugal force, the material 22 moving toward the periphery of the wafer 18 will generate excessive protrusions. Therefore, the material 22 sprayed on the surface of the wafer 18 has a relatively uneven distribution before the main process speed has been performed. In addition, after stopping spraying, the wafer 18 continues to accelerate and rotate at 1 200 rpm for 8 seconds, which will cause the originally raised material 22 to be excessively pulled to the edge of the wafer 18, which will not only cause The phenomenon of uniformity, the bubbles enclosed at the edges of the wafer 18 may also form streak defects. Therefore, the conventional technique must additionally increase the [spraying amount of material 22 'to try to make up for uneven thickness or defective parts. This is not only impossible to improve the uniformity of the coating process for semiconductor processes that require a large amount of spraying. Sentence, but also costly process into
¢ 451 3 31 五、發明說明（4) -- 本。 有鑑於此，本發明之目的係在於提出一種用於高黏滯 度材料的塗佈方法，以解決上述之問題。 本發明提出一種一種用於高黏滯度材料的塗佈方法， 先於一第一預定時間内，以一第一速度旋轉一基板，並同 時喷塗一疋量之而黏滯度材料於該旋轉之基板上。然後停 止旋轉該基板，並同時喷塗該定量之高黏滯度材料於該靜 止之基板上。接著，於一第二預定時間内，以一第二速度 旋轉該基板。最後以一第三速度旋轉該基板。 圖式簡單說明 為讓本發明之上述目的、特徵、和優點能更明顯易 僅’下文特舉一較佳實施例’並配合所附圖式，作詳細說 明如下： 第1圖係顯示習知塗佈裝置的示意圖β 第2Α，2Β圖係顯示習知塗佈製程的剖面示意圖。 第3Α〜3C圖係顯示本發明塗佈方法的剖面示意圖β 第1表係顳示習知塗伟製程的步驟。 第2表係顯示本發明塗佈方法的步驟。 [符號說明] 塗佈裝置〜10 ;可旋轉的失盤~ 12 ;喷嘴〜14 ;晶片表 面〜16 ;晶片〜18 ;控制器~20 ;高黏滯度材料~22 較佳實施例說明： 請參閲第3圖與第2表，第3圖係顯示本發明塗佈方法 的剖面示意圖，第2表係顯示本發明塗佈方法的步驟β本¢ 451 3 31 V. Description of the invention (4)-This. In view of this, an object of the present invention is to propose a coating method for a high viscosity material to solve the above-mentioned problems. The invention proposes a coating method for a high-viscosity material. A substrate is rotated at a first speed at a first predetermined time, and a quantity of the viscosity material is sprayed on the rotation at the same time. On the substrate. Then stop rotating the substrate, and at the same time spray the quantitative high viscosity material on the stationary substrate. Then, the substrate is rotated at a second speed within a second predetermined time. Finally, the substrate is rotated at a third speed. In order to make the above-mentioned objects, features, and advantages of the present invention more obvious and easy, only the following exemplified a preferred embodiment and the accompanying drawings are described in detail as follows: FIG. 1 shows the conventional knowledge Schematic view of the coating device β 2A, 2B are schematic cross-sectional views showing a conventional coating process. Figures 3A to 3C are schematic cross-sectional views of the coating method of the present invention. Β Table 1 shows the steps of the conventional Tu Wei process. Table 2 shows the steps of the coating method of the present invention. [Symbol description] Coating device ~ 10; rotatable lost disk ~ 12; nozzle ~ 14; wafer surface ~ 16; wafer ~ 18; controller ~ 20; high viscosity material ~ 22 Description of preferred embodiments: Please Refer to FIG. 3 and Table 2. FIG. 3 shows a schematic cross-sectional view of the coating method of the present invention, and Table 2 shows the steps β of the coating method of the present invention.
ΗΗΗ ^451331 五、發明說明（5) 發明將高黏滯度材料2 2塗佈於晶片18表面上的方法，是先 於靜止狀態下的晶片18表面上進行第一次喷塗預定量之高 黏滯度材料22，然後以固定的加速度將晶片18的旋轉速度 增加至一第一速度’並同時於一第一預定時間内開始喷塗 預定量之高黏滯度材料22 »在第一預定時間内持續加速旋 轉晶片18的過程中，是先於2 OOr pm轉速下維持5秒鐘並進 行第二次喷塗，再於250rpm轉速下維持7秒鐘並進行第三 次喷塗，如第3A®所示。 表2 步驊 時f4(秒) 轉速(ipm) 加速度 嗪金·倩彤 1 1 0 0 無 2 5 0 0 嘖塗材料 嘖奢材料 3 5 200 5000 嘖塗材料 4 7 250 5000 噴塗材料 5 5 0 1000 嘖塗材料 佟止幃動 6 1 350 5000 無 7 1 750 5000 無 8 1 1200 5000 無 9 30 本 5000 無 主要轉速 10 2 1500 5000 噴塗清潔液 周邊清潔 11 10 600 5000 喷塗清潔液 12 10 1100 5000 無 隨後，停止旋轉晶片18之後，於5秒鐘内進行第四次 噴塗，如第3B圖所示。接下來如第3C圖所示，停止喷塗高 黏滞度材料22，於一第二預定時間内，以一第二速度旋轉^ 451331 V. Description of the invention (5) The method for coating the surface of the wafer 18 with a high viscosity material 2 2 is first sprayed on the surface of the wafer 18 in a stationary state for a predetermined amount of time. The viscosity material 22 is then used to increase the rotation speed of the wafer 18 to a first speed with a fixed acceleration and to simultaneously spray a predetermined amount of the high viscosity material 22 within a first predetermined time. In the process of continuously accelerating the rotation of the wafer 18 for a period of time, it is maintained for 5 seconds at a speed of 2 OOr pm and a second spray is performed, and then maintained for 7 seconds at a speed of 250 rpm and a third spray is performed. 3A®. Table 2 Step time f4 (seconds) Speed (ipm) Acceleration Zinjin · Qiantong 1 1 0 0 None 2 5 0 0 Coating materials 啧 Luxury materials 3 5 200 5000 Coating materials 4 7 250 5000 Spraying materials 5 5 0 1000 Coating materials stop moving 6 1 350 5000 No 7 1 750 5000 No 8 1 1200 5000 No 9 30 This 5000 No main speed 10 2 1500 5000 Spray cleaning liquid peripheral cleaning 11 10 600 5000 Spray cleaning liquid 12 10 1100 After 5000 is not followed, after the wafer 18 is stopped rotating, a fourth spray is performed within 5 seconds, as shown in FIG. 3B. Next, as shown in FIG. 3C, stop spraying the high-viscosity material 22, and rotate at a second speed within a second predetermined time.
第8頁 451 3 3 1 五、發明說明（6) 晶片18。在第二預定時間内以固定的加速度持續加速旋轉 晶片18的過程中’分別於350rpm、750rpm以及1200rpm轉 速下維持1秒鐘，再加速至一第三速度，也就是主要的製 程轉速，維持30秒鐘。後續於持續減速旋轉晶片1 8的情況 下，塗佈裝置10會在晶片18周邊喷灑清潔液’便完成塗佈 製程。 相較於習知技術，本發明塗佈方法於第二次至第三次 噴塗的過程中，晶片18僅以200~250rpm的轉速持續旋轉12 秒之多，因離心力而往晶片周邊移動的材料22不會產生過 高之凸起，因此喷塗在晶片18表面上的材料22不會產生突 兀之高低起伏。而且，本發明塗佈方法刻意於第四次喷塗 的過程中停止旋轉晶片18，使第四次喷塗的材料22可以填 滿晶片18表面上凹陷的部分，進而使喷塗於晶片18表面上 的材料22厚度變得相當均勻。如此一來，後續晶片18僅以 350〜1200 rpm的轉速持續加速旋轉3秒便達到主要轉速， 可以均勻拉開喷塗於晶片18中心處的材料22，以避免產生 厚度不均勻以及條紋缺陷的現象。也因此，本發明方法中 喷塗的材料量可以降低至3/5倍，這對於需要進行大量噴 塗之半導體製程而言’有助於大幅降低製程成本。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明’任何熟習此項技藝者，在不脫離本發明之精 神和範園内，當可作更動與潤飾，因此本發明之保護範圍 當視後附之申請專利範面所界定者為準。Page 8 451 3 3 1 V. Description of the invention (6) Wafer 18. During the second predetermined time, the process of continuously accelerating the rotating wafer 18 with a constant acceleration is maintained at 350 rpm, 750 rpm, and 1200 rpm for 1 second, and then accelerated to a third speed, which is the main process speed, maintaining 30 Seconds. When the wafer 18 is continuously decelerated and rotated, the coating device 10 sprays a cleaning liquid on the periphery of the wafer 18 to complete the coating process. Compared with the conventional technology, during the second to third spraying process of the coating method of the present invention, the wafer 18 only rotates continuously at a speed of 200-250 rpm for 12 seconds, and the material moves to the periphery of the wafer due to centrifugal force. 22 does not generate excessively high bumps, so the material 22 sprayed on the surface of the wafer 18 does not generate sudden height fluctuations. Moreover, the coating method of the present invention deliberately stops rotating the wafer 18 during the fourth spraying process, so that the material 22 sprayed for the fourth time can fill the recessed portion on the surface of the wafer 18, and then spray the surface of the wafer 18 The thickness of the material 22 becomes quite uniform. In this way, the subsequent wafer 18 only accelerates and rotates at a speed of 350 to 1200 rpm for 3 seconds to reach the main speed. The material 22 sprayed on the center of the wafer 18 can be pulled evenly to avoid uneven thickness and streak defects. phenomenon. Therefore, the amount of the material sprayed in the method of the present invention can be reduced to 3/5 times, which is useful for a semiconductor process that requires a large number of spray coatings, which greatly reduces the process cost. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. 'Any person skilled in the art can make changes and decorations without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be determined by the scope of the attached patent application.
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