KR20030081742A - Etcher using a plasma - Google Patents

Abstract

PURPOSE: A plasma etcher is provided to generate stable plasma under the atmospheric pressure and improve organic matter removing speed by applying double chamber structure to the plasma etcher. CONSTITUTION: The plasma etcher comprises a chamber(10); an open chamber(40) which is formed in the chamber(10), on the upper part of which gas injection port(20) is formed, in which hole(30) is formed at a position oppositely directed to the gas injection port, and which is maintained under the atmospheric pressure state; first and second electrodes(50,60) oppositely directed to each other inside the open chamber so that plasma(130) is generated perpendicularly to gas injected into the gas injection port; a dielectric film(80) which is formed on the surface of the first electrode, and on which a plurality of holes(70) are formed; and a power supply part(90) for supplying a power supply to the first electrode, wherein the plasma etcher further comprises third electrode(100) at which a sample(150) is positioned; and a moving means(110) for controlling a distance between the third electrode and the chamber by moving the third electrode vertically.

Description

Etching treatment apparatus using plasma {ETCHER USING A PLASMA}

The present invention relates to an apparatus for etching using plasma.

More specifically, the present invention relates to an etching treatment apparatus using a plasma having a double chamber structure that can be applied to remove organic matters by generating a stable plasma under atmospheric pressure.

In general, low pressure plasma apparatuses are widely used in various processes including semiconductor processes such as thin film deposition, dry etching, and surface treatment. However, in order to generate a plasma in a low vacuum state, a separate vacuum equipment is required, but the price of the plasma device is increased because the price of the vacuum equipment is expensive. In addition, in a low vacuum state, the plasma uniformity is not high, so it is difficult to generate the plasma in large areas, and the density of the plasma is not high.

In order to solve this problem, various kinds of devices have recently been developed for generating plasma at atmospheric pressure, for example, dielectric barrier discharge, atmospheric microwave discharge, pulse corona, etc. There is a study applying plasma (pulsed corona discharge) and the like to remove organic matter, organic thin film growth, dry etching.

In addition, the instability of the glow-to-arc transition is caused by attaching a dielectric with multiple pores to the electrode and using the pores to generate cathode fall for self-stabilization. Research using a porous electrode discharge can be reduced. This prior art is disclosed in US Pat. No. 6,005,349.

Briefly looking at the technique disclosed in the above-mentioned US Patent No. 6,005,349, a dielectric sheet having a lot of small holes is provided on the cathode. Holes in the dielectric plates each act as a microchannel to limit the flow of current, thus limiting the glow-arc transition by preventing the total current from increasing.

Therefore, it is expected that stable plasma can be generated by using capillary discharge using such a porous electrode.

The present invention has been made in view of this point, and an object of the present invention is to provide an etching treatment apparatus using a plasma for applying a double chamber structure to generate a stable plasma under atmospheric pressure and to improve an organic material removal rate.

An object of the present invention is to use a plasma to reduce defects such as arcs generated during plasma generation and etching by placing the specimen out of the chamber and making the gas flow direction and the plasma generation direction perpendicular to each other. An etching treatment apparatus is provided.

In addition, an object of the present invention is to provide an etching treatment apparatus using a plasma to adjust the amount of plasma by adjusting the position of the third electrode which is located opposite to the hole of the chamber up and down.

It is also an object of the present invention to provide an etching processing apparatus using a plasma for forming an etching processing apparatus using a three-dimensional plasma by installing a plurality of units having a double chamber structure using a support.

1 is a view showing a schematic structure of an apparatus for etching using plasma according to the present invention;

2 is a view showing a schematic structure of an etching treatment apparatus using plasma, which is another embodiment of the present invention;

3 is a view showing a schematic structure of an apparatus for etching using plasma, which is another embodiment of the present invention;

4 is a plan view of FIG.

5 is a view illustrating an embodiment in which an arc discharge resistor is added to the present invention.

<Code Description of Main Parts of Drawing>

10 chamber 20 gas inlet

30: hole 40: open chamber

50: first electrode 60: second electrode

70: hole 80: dielectric film

90: power supply unit 100: third electrode

110: moving means 120: cylindrical electrode

130: plasma 140: unit

150: Psalm 160: Resistance

In order to achieve the above object, as an embodiment of the present invention, the invention as set forth in claim 1, comprising: a chamber; An open chamber formed in the chamber, a gas injection hole formed at an upper portion thereof, a hole formed at a position opposite to the gas injection hole, and maintained at an atmospheric pressure; First and second electrodes disposed in the open chamber so as to generate plasma in a direction perpendicular to the gas injected into the gas injection hole; A dielectric film formed on the surface of the first electrode and having a plurality of holes; And a power supply unit for supplying power to the first electrode, wherein the above-mentioned problem is solved.

In addition, the invention as set forth in claim 2, further comprising: a third electrode in which the specimen is located; And moving means for adjusting the distance to the chamber by moving the third electrode up and down, thereby solving the above-mentioned problems.

In addition, the invention described in claim 3 is the etching treatment apparatus using the plasma according to claim 2, wherein the moving means is a transfer screw.

The invention according to claim 4 is the etching treatment apparatus using the plasma according to claim 2, wherein the third electrode is grounded.

In addition, the invention described in claim 5 is the etching treatment apparatus using the plasma according to claim 2, wherein a power supply unit is connected to the third electrode.

In addition, the invention as set forth in claim 6 further comprises a cylindrical electrode according to claim 1, which is provided between the first electrode and the second electrode, and is provided at the same distance from the first electrode and the second electrode. As an etching treatment apparatus using a plasma, the above-mentioned problem is solved.

The invention according to claim 7 is an etching treatment apparatus using plasma according to claim 1, wherein a plurality of holes formed in the dielectric film have a fine hole shape.

The invention according to claim 8 is an etching treatment apparatus using plasma according to claim 1, characterized in that a plurality of holes formed in the dielectric film have a slot shape.

In addition, the invention described in claim 9 is an etching treatment apparatus using plasma according to claim 1, wherein an arc preventing resistor is connected to the second electrode.

In addition, in the invention of claim 10, the power supply is an AC power supply according to claim 1 or 5, wherein the AC power supply has a lower limit of the pulsed power supply frequency range of 5 KHz. An etching treatment apparatus using a plasma having an upper limit of 100 KHz, a lower limit of a voltage value of 1 KV, a lower limit of 20 KV, a lower limit of a current value of 0.1 A, and an upper limit of 2 A. Solve one task.

In addition, the invention according to claim 11, wherein the power supply unit has a lower limit of 5KHz and an upper limit of 100KHz of the pulsed power supply frequency range, and a lower limit of voltage of 1KV. The above-mentioned problem is solved by the plasma processing apparatus using a plasma which has a lower limit of 20 KV, a lower limit of a current value of 0.1 A, and an upper limit of 2 A.

In addition, in the invention according to claim 12, helium (He) is injected into the gas inlet as a discharge gas, and one of oxygen (O 2) and halogen group (F-series) gas is injected into the reactive gas, and argon ( The above-mentioned problem is solved by the etching process apparatus using a plasma characterized by injecting one of Ar) and nitrogen (N2) into an activation gas.

Further, as another embodiment of the present invention, the invention described in claim 13, in the etching treatment apparatus using a plasma, a gas injection hole is formed on the upper portion, a hole is formed in a position opposite to the gas injection hole, An open chamber to be maintained, first and second electrodes positioned opposite to the open chamber so as to generate plasma in a direction perpendicular to the gas injected into the gas inlet, and a surface of the first electrode, A unit (UNIT) consisting of a dielectric film having a plurality of holes; And a chamber having a plurality of coupling means for allowing the units to be coupled at regular intervals, wherein at least one unit is coupled to the chamber to form a three-dimensional plasma processing apparatus. As the processing apparatus, the above problem is solved.

In addition, the invention according to claim 14, according to claim 13, the third electrode on which the specimen is located; And moving means for adjusting the distance to the open chamber by moving the third electrode up and down, thereby solving the above problem.

In addition, the invention described in claim 15 is the etching treatment apparatus using the plasma according to claim 14, wherein the moving means is a transfer screw.

The invention according to claim 16 is the etching treatment apparatus using plasma according to claim 14, wherein the third electrode is grounded.

The invention according to claim 17 is an etching treatment apparatus using plasma according to claim 14, wherein a power supply unit is connected to the third electrode.

In addition, the invention as set forth in claim 18 further comprises a cylindrical electrode according to claim 13, which is provided between the first electrode and the second electrode, and is installed at the same distance from the first electrode and the second electrode. As an etching treatment apparatus using a plasma, the above-mentioned problem is solved.

In addition, the invention described in claim 19 is an etching treatment apparatus using plasma according to claim 13, wherein the hole of the unit (UNIT) made of the dielectric film having a plurality of holes has a fine hole shape. Solve.

The invention according to claim 20 is an etching treatment apparatus using plasma according to claim 13, wherein a hole of a unit (UNIT) made of a dielectric film having a plurality of holes has a slot shape. do.

In addition, the invention described in claim 21 is an etching treatment apparatus using plasma according to claim 13, wherein an arc preventing resistor is connected to the second electrode.

In addition, the invention as set forth in claim 22, wherein the power supply unit is an AC power supply according to claim 13 or 17, wherein the AC power supply has a lower limit of a pulsed power supply frequency range of 5 KHz. An etching treatment apparatus using a plasma having an upper limit of 100 KHz, a lower limit of a voltage value of 1 KV, a lower limit of 20 KV, a lower limit of a current value of 0.1 A, and an upper limit of 2 A. Solve one task.

In addition, in the invention according to claim 23, the power supply unit according to claim 13, the lower limit of the pulsed power supply frequency range of 5KHz, the upper limit of 100KHz, the lower limit of the voltage value of 1KV The above-mentioned problem is solved by the plasma processing apparatus using a plasma which has a lower limit of 20 KV, a lower limit of a current value of 0.1 A, and an upper limit of 2 A.

In addition, in the invention according to claim 24, helium (He) is injected into the gas inlet as a discharge gas, and one of oxygen (O 2) and halogen group (F series) gas is injected into the reactive gas, and argon ( An etching treatment apparatus using plasma, wherein one of Ar) and nitrogen (N2) is injected into an activation gas, the above-mentioned problem is solved.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1 is a view showing a schematic structure of an etching treatment apparatus using a plasma according to the present invention.

As shown in FIG. 1, an embodiment of the present invention includes a chamber 10, formed in the chamber 10, a gas inlet 20 formed at an upper portion thereof, and facing the gas inlet 20. A hole 30 is formed at a position, and the open chamber 40 maintains a normal pressure and the plasma 130 is generated in a direction perpendicular to the gas injected into the gas inlet 20. A first dielectric film 80 having a plurality of holes 70 formed on the surface of the first electrode 50 and the first and second electrodes 50 and 60 opposite to each other; Distance between the chamber 10 and the power supply unit 90 for supplying power to the first electrode 50, the third electrode 100 on which the specimen 150 is located, and the third electrode 100 are moved up and down. It consists of a moving means 110 to adjust the.

The moving means 110 may be implemented by a transfer screw or a cylinder.

Since the direction of the gas injected into the gas injection hole 20 and the direction in which the plasma 130 is generated in the open chamber 40 is formed in a vertical relationship, an arc lamp generated when the plasma 130 is generated and etched. This reduces the defects and allows the etching process to be uniform.

In addition, the third electrode 100 is grounded or a power supply (not shown) is connected.

The chamber 10 and the open chamber 40 are formed of Pyrex or the like, and the first, second, and third electrodes 50, 60, 100 are made of stainless steel. The interior of the chamber 10 and the open chamber 40 is maintained at normal pressure (760 Torr).

The upper part of the first electrode 50 is preferably coated with a polyimide having a thickness of about 50 μm, and the diameters of the first, second, and third electrodes 50, 60, 100 are 140 mm. . The interval between the first and second electrodes 50 and 60 is 5-15 mm, more preferably 5-10 mm. The first electrode 50 of the two electrodes is connected to the power supply unit 90, the second electrode 60 is grounded.

The first electrode 50 is then covered with a dielectric film 80 having a plurality of holes 70 for inducing porous discharge. The dielectric film 80 may be formed of Teflon, ceramic, or the like, and the thickness of the dielectric film 80 is 8 mm, and the aspect ratio d / L (d) of the holes 70 drilled in the dielectric film 80; The diameter of the hole, L; the length of the hole) is preferably 1/10 to 1/15, and the spacing between the holes is 3-10 mm.

In order to generate an atmospheric pressure plasma, helium (He) or a mixed gas of helium (He) and oxygen (O ₂ ) is injected into the chamber 10.

2 is a view showing a schematic structure of an apparatus for etching using plasma, which is another embodiment of the present invention.

As shown in Figure 2, another embodiment of the present invention is formed in the chamber 10, the chamber 10, a gas inlet 20 is formed on the upper side, and opposite the gas inlet 20 Holes 30 are formed at positions, and the first and second chambers 130 and 40 maintain plasma pressure in a direction perpendicular to the gas injected into the gas inlet 20. A dielectric film 80 formed on the surfaces of the electrodes 50 and 60, the first and second electrodes 50 and 60, and having a plurality of holes 70, the first electrode 50 and It is installed between the second electrode 60, the cylindrical electrode 120 and the first and second electrodes 50 and 60 at the same distance from the first electrode 50 and the second electrode 60. The power supply unit 90 for supplying power to the power source, the third electrode 100 in which the specimen 150 is located, and the third electrode 100 are moved up and down to adjust the distance from the chamber 10. this Further it includes a means (110).

The plurality of holes 70 formed in the dielectric film 80 have a fine hole shape or a slot shape.

The cylindrical electrode 120 is connected to the ground.

The moving means 110 may be implemented as a transfer screw or a cylinder.

In addition, the third electrode 100 is grounded or a power supply unit (not shown) is connected.

3 is a view showing a schematic structure of an apparatus for etching using plasma, which is another embodiment of the present invention, and FIG. 4 is a plan view of FIG.

3 and 4, in another embodiment of the present invention, a gas inlet 40 is formed at an upper portion thereof, a hole 30 is formed at a position opposite to the gas inlet 20, and an atmospheric pressure. Open chamber 40 maintained in a state, and the first and second are located in the open chamber 40 to face the plasma 130 in a direction perpendicular to the gas injected into the gas injection port 20 A unit 140 formed of a dielectric film 80 having electrodes 50, 60, a surface of the first electrode 50, and having a plurality of holes 70, and the unit 140. The chamber 10 having a plurality of coupling means 160 to be coupled at regular intervals, the third electrode 100 on which the specimen is located, and the third electrode 100 are vertically moved to move the unit ( It comprises a moving means 110 to adjust the distance to the 140.

Therefore, at least one or more units 140 are coupled to the chamber 10 to form a three-dimensional plasma processing apparatus.

In addition, the plurality of holes 70 formed in the dielectric film 80 may have a fine hole shape or a slot shape.

In addition, the coupling means 160 has a fine hole shape (Capillary Hole Type) or slot shape (Slot Type).

In addition, the moving means 110 may be implemented as a transfer screw or a cylinder.

In addition, the third electrode 100 is grounded or a power supply (not shown) is connected.

5 is a view illustrating an embodiment in which an arc discharge resistor is added to the present invention.

In FIG. 5, the chamber 10 shown in FIG. 1 and the chamber 10 are formed in the chamber 10, and a gas inlet 20 is formed at an upper portion thereof, and the hole 30 is disposed at a position opposite to the gas inlet 20. ) Is formed and the open chamber 40 and the moving means 110 are maintained at atmospheric pressure, but the components except for the arc discharge resistor 160 are applied in the same manner.

The first and second electrodes 50 and 60 are disposed to face each other in the open chamber 40 so that the plasma 130 is generated in a direction perpendicular to the gas injected into the gas inlet 20. A dielectric film 80 having a plurality of holes 70, a power supply 90 supplying power to the first electrode 50, and a specimen 150 are formed on the surface of the first electrode 50. It is composed of a third electrode 100 located.

An arc discharge resistor 150 is connected between the second electrode 60 and the third electrode 100.

The power supply unit 90 commonly applied to the embodiments of the present invention is an AC power supply, and the AC power supply has a lower limit of a pulsed power supply frequency range of 5 KHz and an upper limit. Has a lower limit of 1 KV, a lower limit of 20 KV, a lower limit of 0.1 A, and an upper limit of 2 A.

Then, helium (He) is injected into the gas inlet 20 as a discharge gas, and one of oxygen (O 2) and halogen group (F-based) gas is injected as a reactive gas, and in argon (Ar) and nitrogen (N 2) It has a plurality of gas supply means to inject one into the activation gas.

When the plasma apparatus as used in the present embodiment is used to remove the organic material, a specimen for removing the organic material is placed on the third electrode 100. In this case, in order to improve the organic removal rate, an infrared lamp may be installed below the specimen and the specimen may be heated using the same.

On the other hand, the holes 70 formed in the dielectric film 80 may be formed to have the same aspect ratio, but may also be formed so that the holes having different aspect ratios are alternately arranged, which is dependent on the process of applying the plasma apparatus. Can be determined.

Although the present invention has been described in detail with reference to preferred embodiments, this embodiment has been presented for the purpose of understanding the present invention, and the scope of the present invention is not limited to this embodiment. It will be understood by those skilled in the art that various modifications can be made without departing from the scope of the technical idea of the present invention, and the scope of the present invention should be interpreted by the appended claims.

As described above, the present invention achieves the effect of applying the dual chamber structure to generate a stable plasma under atmospheric pressure and to implement an etching treatment apparatus using a plasma with improved organic material removal rate.

In addition, the present invention achieves the effect of being able to adjust the position of the third electrode which is located opposite the hole of the chamber up and down to adjust the amount and uniformity of the plasma.

In addition, the present invention is to provide a plurality of units having a double chamber structure by using a support to form an etching treatment apparatus using a three-dimensional plasma to enable selective etching of the desired portion or etching of the three-dimensional shape To achieve the effect.

In addition, by placing the specimen out of the chamber, the gas flow direction and the plasma generation direction are perpendicular to each other, thereby reducing defects such as arcs generated during plasma generation and etching and performing uniform etching treatment. To achieve.

Claims (24)

In the etching treatment apparatus using a plasma, chamber; An open chamber formed in the chamber, a gas injection hole formed at an upper portion thereof, a hole formed at a position opposite to the gas injection hole, and maintained at an atmospheric pressure; First and second electrodes disposed in the open chamber so as to generate plasma in a direction perpendicular to the gas injected into the gas injection hole; A dielectric film formed on the surface of the first electrode and having a plurality of holes; And Etching apparatus using a plasma, characterized in that it comprises a power supply for supplying power to the first electrode. The method of claim 1, A third electrode on which the specimen is located; And Etching apparatus using a plasma characterized in that it further comprises a moving means for adjusting the distance to the chamber by moving the third electrode up and down. The etching apparatus according to claim 2, wherein the moving means is a conveying screw. The etching apparatus according to claim 2, wherein the third electrode is grounded. 3. The etching apparatus of claim 2, wherein a power supply unit is connected to the third electrode. The etching method of claim 1, further comprising a cylindrical electrode disposed between the first electrode and the second electrode, the cylindrical electrode being disposed at the same distance from the first electrode and the second electrode. Processing equipment The etching apparatus of claim 1, wherein the plurality of holes formed in the dielectric film have a fine hole shape. The etching apparatus of claim 1, wherein the plurality of holes formed in the dielectric film have a slot shape. The etching apparatus of claim 1, wherein an arc preventing resistor is connected to the second electrode. The power supply of claim 1 or 5, wherein the power supply is an AC power supply, the AC power supply has a lower limit of 5KHz and an upper limit of 100KHz of a pulsed power supply frequency range. And a lower limit value of 1 KV, a lower limit value of 20 KV, a lower limit value of 0.1 A, and an upper limit value of 2 A. 5. The method of claim 1, wherein the power supply unit, The lower limit of the pulsed power supply frequency range is 5KHz, the upper limit is 100KHz, the lower limit of the voltage value is 1KV, the lower limit is 20KV, the lower limit of the current value is 0.1A, the upper limit is Etching apparatus using a plasma, characterized in that the power supply having a 2A. According to claim 1, Helium (He) is injected into the gas inlet as a discharge gas, one of oxygen (O 2), halogen group (F series) gas is injected into the reactive gas, argon (Ar), nitrogen (N 2) Etching apparatus using a plasma, characterized in that to inject one of the activation gas. In the etching treatment apparatus using a plasma, A gas inlet is formed in an upper portion, a hole is formed at a position opposite to the gas inlet, an open chamber maintained at an atmospheric pressure state, and the open so that plasma is generated in a direction perpendicular to the gas injected into the gas inlet. A unit (UNIT) formed of first and second electrodes facing each other in the chamber and a dielectric film formed on a surface of the first electrode and having a plurality of holes; And a power supply unit supplying power on the electrode. A chamber having a plurality of coupling means for allowing the unit to be coupled at regular intervals, At least one unit is coupled to the unit to form a three-dimensional plasma processing apparatus. The method of claim 13, A third electrode on which the specimen is located; And Etching apparatus using a plasma characterized in that it further comprises a moving means for adjusting the distance to the unit by moving the third electrode up and down. 15. The etching apparatus according to claim 14, wherein said moving means is a conveying screw. 15. The etching apparatus of claim 14, wherein the third electrode is grounded. 15. The apparatus of claim 14, wherein a power supply is connected to the third electrode. 14. The etching method of claim 13, further comprising a cylindrical electrode disposed between the first electrode and the second electrode, the cylindrical electrode being disposed at the same distance from the first electrode and the second electrode. Processing unit. The etching apparatus of claim 13, wherein a hole of a unit (UNIT) made of a dielectric film having a plurality of holes has a fine hole shape. The etching apparatus according to claim 13, wherein a hole of a unit (UNIT) made of a dielectric film having a plurality of holes has a slot shape. The apparatus of claim 13, wherein an arc preventing resistor is connected to the second electrode. 18. The power supply of claim 13 or 17, wherein the power supply is an AC power supply, the AC power supply having a lower limit of 5KHz and an upper limit of 100KHz of a pulsed power supply frequency range. And a lower limit value of 1 KV, a lower limit value of 20 KV, a lower limit value of 0.1 A, and an upper limit value of 2 A. 5. The method of claim 13, wherein the power supply unit, The lower limit of the pulsed power supply frequency range is 5KHz, the upper limit is 100KHz, the lower limit of the voltage value is 1KV, the lower limit is 20KV, the lower limit of the current value is 0.1A, the upper limit is Etching apparatus using a plasma, characterized in that the power supply having a 2A. The method of claim 13, wherein helium (He) is injected into the gas inlet as a discharge gas, one of oxygen (O2), halogen group (F series) gas is injected into the reactive gas, argon (Ar), nitrogen (N2) Etching apparatus using a plasma, characterized in that to inject one of the activation gas.