KR20030081614A - Fabrication method of semiconductor device - Google Patents
Fabrication method of semiconductor device Download PDFInfo
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- KR20030081614A KR20030081614A KR1020020019937A KR20020019937A KR20030081614A KR 20030081614 A KR20030081614 A KR 20030081614A KR 1020020019937 A KR1020020019937 A KR 1020020019937A KR 20020019937 A KR20020019937 A KR 20020019937A KR 20030081614 A KR20030081614 A KR 20030081614A
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- thin film
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- interlayer insulating
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 101
- 239000002184 metal Substances 0.000 claims abstract description 101
- 239000010409 thin film Substances 0.000 claims abstract description 47
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 239000011229 interlayer Substances 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000005498 polishing Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000000452 restraining effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
- H01L21/76852—Barrier, adhesion or liner layers the layer covering a conductive structure the layer also covering the sidewalls of the conductive structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
본 발명은 반도체 소자 제조 방법에 관한 것으로, 더욱 상세하게는 미세선폭을 갖는 금속배선을 형성하는 방법에 관한 것이다.The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a metal wiring having a fine line width.
반도체 소자가 점차 고집적화, 다층화됨에 따라 중요한 기술의 하나로 다층 배선 기술이 등장하게 되었는데, 이와 같은 다층 배선 기술은 금속 배선층과 절연막층을 회로 소자가 형성된 반도체 기판 상부에 교대로 형성하며, 절연막에 의해 분리된 금속 배선층 사이를 비아를 통해 전기적으로 접속함으로써 회로 동작이 이루어지도록 하는 것이다.As semiconductor devices have been increasingly integrated and multilayered, multilayer wiring technology has emerged as one of the important technologies. The multilayer wiring technology alternately forms a metal wiring layer and an insulating film layer on the semiconductor substrate on which the circuit elements are formed, and is separated by an insulating film. The circuit operation is performed by electrically connecting the interconnected metal wiring layers through vias.
금속배선은 일반적으로 알루미늄 합금으로 형성하는데, 이 경우 장시간 사용하다보면 전류 흐름에 기인하여 배선을 따라 알루미늄이 자체확산(self-diffusion)되어 금속배선의 단락 등이 초래되는 일렉트로마이그레이션(electromigration) 현상이 발생하는 문제점이 있다.Metal wiring is generally formed of aluminum alloy. In this case, after long-term use, the electromigration phenomenon that aluminum self-diffusion along the wiring due to current flow causes short circuit of metal wiring. There is a problem that occurs.
이러한 일렉트로마이그레이션 현상을 방지하기 위해 금속배선구의 내벽에 TiN, TaN 등과 같이 두 종류 이상의 원소들의 조합으로 된 베리어 금속막을 증착하는데, 이러한 베리어 금속막은 자체 저항값이 높아서 일렉트로마이그레이션 억제에는 효과적이나, 금속배선의 저항, 특히 비아 저항을 증가시키는 문제점이 있다.In order to prevent the electromigration phenomenon, a barrier metal film including a combination of two or more kinds of elements such as TiN and TaN is deposited on the inner wall of the metal wiring hole, and the barrier metal film has a high self-resistance value, which is effective for suppressing electromigration. There is a problem of increasing the resistance, in particular the via resistance.
만약, 베리어 금속막을 Ti, Ta 등과 같이 단일 원소로 형성하면 비아 저항의 증가는 억제할 수 있으나, 일렉트로마이그레이션 억제 효과는 떨어진다.If the barrier metal film is formed of a single element such as Ti or Ta, the increase in the via resistance can be suppressed, but the effect of suppressing electromigration is inferior.
본 발명은 상기한 바와 같은 문제점을 해결하기 위한 것으로, 그 목적은 금속배선의 일렉트로마이그레이션 현상을 억제하면서도 베리어금속막으로 인한 비아저항 증가를 방지하는 데 있다.The present invention has been made to solve the above problems, and an object thereof is to prevent an increase in via resistance due to the barrier metal film while suppressing the electromigration phenomenon of the metal wiring.
도 1a 내지 1e는 본 발명에 따른 반도체 소자 제조 방법을 도시한 단면도이다.1A to 1E are cross-sectional views illustrating a method of manufacturing a semiconductor device according to the present invention.
상기한 바와 같은 목적을 달성하기 위하여, 본 발명에서는 금속배선의 하부에 베리어금속막을 형성하되 비아의 내벽에는 베리어금속막이 없는 구조로 하는 것을 특징으로 한다.In order to achieve the above object, the present invention is characterized in that the barrier metal film is formed on the lower portion of the metal wiring, but the barrier metal film is not formed on the inner wall of the via.
즉, 본 발명에 따른 반도체 소자 제조 방법은, 하부 금속배선 및 하부절연막을 포함한 반도체 구조물 상부 전면에 층간절연막을 형성하고 층간절연막을 선택적으로 식각하여 하부 금속배선이 일부분 노출되는 비아를 형성하는 단계; 비아를 포함한 층간절연막의 상부 전면에 제1금속박막을 형성하는 단계; 비아 상부를 포함하는 일부분을 제외한 나머지 제1금속박막을 식각하여 비아 내부를 매립하고 층간절연막의 상면으로부터 소정두께를 가지는 제1금속박막을 남기는 단계; 제1금속박막및 층간절연막의 상부 전면에 베리어금속막을 형성하는 단계; 제1금속박막의 상면 및 측면에 형성된 베리어금속막과, 제1금속박막을 화학기계적 연마하여 제1금속박막의 상면을 노출시키는 단계; 노출된 제1금속박막 및 베리어금속막의 상부 전면에 제2금속박막을 형성하고 비아 상부를 포함하는 영역을 제외한 나머지 제2금속박막을 식각하여 비아를 통해 하부 금속배선과 연결되는 상부 금속배선을 형성하는 단계를 포함하여 이루어진다.That is, the method of manufacturing a semiconductor device according to the present invention may include forming an interlayer insulating film on an upper surface of a semiconductor structure including a lower metal wiring and a lower insulating film and selectively etching the interlayer insulating film to form vias through which the lower metal wiring is partially exposed; Forming a first metal thin film on the entire upper surface of the interlayer insulating film including vias; Etching the remaining first metal thin film except for a portion including the upper portion of the via to fill the via, and to leave a first metal thin film having a predetermined thickness from an upper surface of the interlayer insulating film; Forming a barrier metal film on the entire upper surface of the first metal thin film and the interlayer insulating film; Exposing a top surface of the first metal thin film by chemically and mechanically polishing the barrier metal film formed on the top and side surfaces of the first metal thin film and the first metal thin film; A second metal thin film is formed on the entire upper surface of the exposed first metal thin film and the barrier metal film, and the second metal thin film is etched except for the area including the upper via to form an upper metal wiring connected to the lower metal wiring through the via. It comprises a step.
이하, 본 발명에 따른 반도체 소자 제조 방법에 대해 상세히 설명한다.Hereinafter, a method of manufacturing a semiconductor device according to the present invention will be described in detail.
도 1a 내지 1e는 본 발명에 따른 반도체 소자 제조 방법을 도시한 단면도이다.1A to 1E are cross-sectional views illustrating a method of manufacturing a semiconductor device according to the present invention.
먼저, 도 1a에 도시된 바와 같이, 반도체 기판의 구조물(1), 즉 개별 소자가 형성된 반도체 기판 또는 하부 금속 배선층 상부에 산화막 등으로 이루어진 하부절연막(2)을 형성하고, 하부절연막(2)의 소정 영역을 식각하여 금속 배선구를 형성한 후 금속물질을 충진하고 하부절연막(2)이 노출될 때까지 화학기계적 연마하여 상부표면을 평탄화함으로써, 하부금속배선(3)을 형성한다.First, as shown in FIG. 1A, a lower insulating film 2 made of an oxide film or the like is formed on a structure 1 of a semiconductor substrate, that is, on a semiconductor substrate on which individual elements are formed or on a lower metal wiring layer. After etching a predetermined region to form a metal wiring hole, the metal material is filled and chemically polished until the lower insulating film 2 is exposed to planarize the upper surface, thereby forming the lower metal wiring 3.
이어서, 하부절연막(2) 및 하부금속배선(3)의 상부 전면에 층간절연막(4)을 형성하고 하부금속배선(3) 상의 층간절연막(4)을 소정폭으로 식각하여 비아(100)를 형성한 다음, 비아(100)를 포함하여 층간절연막(4)의 상부 전면에 제1금속박막(5)을 형성하고, 제1금속박막(5) 상에 감광막을 도포하고 노광 및 현상하여 비아(100)의 상부에 해당하는 영역을 제외한 나머지 부분이 제거된 제1감광막 패턴(6)을 형성한다.Subsequently, an interlayer insulating film 4 is formed on the entire upper surface of the lower insulating film 2 and the lower metal wiring 3, and the via 100 is formed by etching the interlayer insulating film 4 on the lower metal wiring 3 to a predetermined width. Next, the first metal thin film 5 is formed on the entire upper surface of the interlayer insulating film 4 including the via 100, and the photosensitive film is coated on the first metal thin film 5, exposed and developed to form the via 100. The first photoresist pattern 6 is formed, except for the region corresponding to the upper portion of the top surface.
이 때 제1감광막 패턴(6)은 비아(100)보다 크거나 같은 폭을 가지도록 하며, 이는 이후 비아 내부를 금속물질로 완전히 매립하도록 하기 위함이다.In this case, the first photoresist layer pattern 6 has a width greater than or equal to that of the via 100, so as to completely fill the via with a metal material.
다음, 도 1b에 도시된 바와 같이, 제1감광막 패턴(6)을 마스크로 하여 노출된 제1금속박막(5)을 건식 식각하여 비아의 내부 및 상부에만 제1금속박막(5)을 남기고 나머지 부분의 제1금속박막(5)을 모두 제거하여 그 하부의 층간절연막을 노출시킨 다음, 세정 공정을 수행한다.Next, as shown in FIG. 1B, the first metal thin film 5 is dry-etched using the first photoresist pattern 6 as a mask, leaving the first metal thin film 5 only inside and over the via. All of the first metal thin film 5 is removed to expose the lower interlayer insulating film, and then a cleaning process is performed.
이 때 제1감광막 패턴(6)이 비아(100)보다 크거나 같은 폭을 가지므로 남아있는 제1금속박막(5)이 비아의 내부를 완전히 매립하게 된다.In this case, since the first photoresist pattern 6 has a width equal to or greater than that of the via 100, the remaining first metal thin film 5 completely fills the inside of the via.
제1금속박막(5)으로는 Al, Al합금, 또는 Cu를 사용할 수 있다.Al, Al alloy, or Cu may be used as the first metal thin film 5.
또한, 세정 공정 이후에 제1금속박막(5)을 화학기계적 연마하여 소정두께 제거한 다음, 300~450℃의 온도에서 60분 이내의 시간동안 열처리할 수도 있다.In addition, after the cleaning process, the first metal thin film 5 may be chemically mechanically polished to remove a predetermined thickness, and then heat-treated at a temperature of 300 to 450 ° C. for 60 minutes or less.
다음, 도 1c에 도시된 바와 같이, 제1금속박막(5) 및 노출된 층간절연막(4)의 상부 전면에 베리어 금속막(7)을 형성한다.Next, as shown in FIG. 1C, the barrier metal film 7 is formed on the entire upper surface of the first metal thin film 5 and the exposed interlayer insulating film 4.
베리어금속막으로는 Ti, Ta, Co, TiN, TiW, TaN, WN 중에서 선택된 한 물질로 이루어진 단일층, 또는 이들 물질 중에서 선택된 두 물질로 이루어진 이중층으로 형성할 수 있으며, 베리어금속막의 총 두께는 300~1000Å 정도로 형성한다.The barrier metal film may be formed of a single layer made of one material selected from Ti, Ta, Co, TiN, TiW, TaN, or WN, or a double layer made of two materials selected from these materials. The total thickness of the barrier metal film is 300 It forms about ~ 1000Å.
다음, 화학기계적 연마 방법을 이용하여 제1금속박막(5) 및 베리어 금속막(7)의 상단부를 소정두께 제거하여 제1금속박막(5)의 상면을 노출시킨 다음, 세정공정을 수행한다.Next, the upper surfaces of the first metal thin film 5 and the barrier metal film 7 are removed by a chemical mechanical polishing method to expose the top surface of the first metal thin film 5, and then a cleaning process is performed.
이 때 화학기계적 연마로 제거되는 제1금속박막(5)의 두께는 층간절연막(4)의 상면으로부터 제1금속박막(5) 상면까지의 총 두께의 약 1/3 이상이 되도록 한다.At this time, the thickness of the first metal thin film 5 removed by chemical mechanical polishing is about 1/3 or more of the total thickness from the top surface of the interlayer insulating film 4 to the top surface of the first metal thin film 5.
이어서, 노출된 제1금속박막(5) 및 베리어 금속막(7)의 상부 전면에 제2금속박막(8)을 증착하고, 제2금속박막(8) 상에 감광막을 도포한 후 노광 및 현상하여 상부금속배선 상부에 해당하는 영역을 제외한 나머지 부분이 제거된 제2감광막 패턴(9)을 형성한다.Subsequently, the second metal thin film 8 is deposited on the entire upper surface of the exposed first metal thin film 5 and the barrier metal film 7, and the photosensitive film is coated on the second metal thin film 8, followed by exposure and development. As a result, the second photoresist pattern 9 is formed, except for the region corresponding to the upper portion of the upper metal wiring.
제2금속박막(8)으로는 Al, Al합금, 또는 Cu를 사용할 수 있다.Al, Al alloy, or Cu may be used as the second metal thin film 8.
제2금속박막(8)을 증착한 후에는 300~450℃의 온도에서 60분 이내의 시간동안 열처리할 수도 있다.After the deposition of the second metal thin film 8, it may be heat-treated for a time within 60 minutes at a temperature of 300 ~ 450 ℃.
다음, 도 1e에 도시된 바와 같이, 제2감광막 패턴(9)을 마스크로 하여 노출된 제2금속박막(8)을 제거함으로써, 비아(100)를 통해 하부 금속배선(3)과 연결되는 상부 금속배선(8)을 형성한다.Next, as shown in FIG. 1E, the second metal thin film 8 that is exposed using the second photoresist pattern 9 as a mask is removed, so that the upper part connected to the lower metal wiring 3 through the vias 100. The metal wiring 8 is formed.
상술한 바와 같이, 본 발명에서는 상부금속배선의 하부에 베리어 금속막을 형성하여 일렉트로마이그레이션을 억제하면서도 비아의 내벽에는 베리어 금속막이 없는 구조로 하여 비아 저항의 증가를 억제하는 효과가 있다.As described above, in the present invention, the barrier metal film is formed under the upper metal wiring to suppress the electromigration, but the barrier metal film is not provided on the inner wall of the via, thereby increasing the via resistance.
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