KR20030075625A - An apparatus of fabricating semiconductor devices having a temperature sensor coated with insulating material - Google Patents

An apparatus of fabricating semiconductor devices having a temperature sensor coated with insulating material Download PDF

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Publication number
KR20030075625A
KR20030075625A KR1020020014949A KR20020014949A KR20030075625A KR 20030075625 A KR20030075625 A KR 20030075625A KR 1020020014949 A KR1020020014949 A KR 1020020014949A KR 20020014949 A KR20020014949 A KR 20020014949A KR 20030075625 A KR20030075625 A KR 20030075625A
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South Korea
Prior art keywords
temperature sensor
electrostatic chuck
insulating material
semiconductor manufacturing
dry etching
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KR1020020014949A
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Korean (ko)
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이진원
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삼성전자주식회사
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Priority to KR1020020014949A priority Critical patent/KR20030075625A/en
Publication of KR20030075625A publication Critical patent/KR20030075625A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Abstract

PURPOSE: Semiconductor manufacturing equipment having an insulating material coated temperature sensor is provided to be capable of preventing electrical short with an electrostatic chuck. CONSTITUTION: Semiconductor manufacturing equipment(10) is provided with an electrostatic chuck(70) for loading a wafer(W), a lower electrode(50) attached at the lower surface of the electrostatic chuck, an upper electrode(30) installed at the upper portion of the electrostatic chuck, a temperature sensor hole(90) formed from the bottom portion of the lower electrode to the predetermined portion of the electrostatic chuck, and a temperature sensor(110) inserted in the temperature sensor hole. At this time, an insulating layer(130) is coated at the entire outer surface of the temperature sensor for preventing the direct contact between the electrostatic chuck and the temperature sensor.

Description

절연물질로 코팅된 온도센서를 구비하는 반도체 제조 장비{An apparatus of fabricating semiconductor devices having a temperature sensor coated with insulating material}An apparatus of fabricating semiconductor devices having a temperature sensor coated with insulating material}

본 발명은 절연물질로 코팅된 온도센서를 구비하는 반도체 제조장비에 관한것이다.The present invention relates to a semiconductor manufacturing equipment having a temperature sensor coated with an insulating material.

반도체 소자의 제조에 있어서 반도체 기판위에 원하는 패턴을 형성하기 위해서는 상기 반도체 기판의 상부 표면에 감광막을 도포하고 사진 공정을 실시하여 감광막 패턴을 형성한 후, 상기 감광막 패턴을 식각 마스크로 하여 감광막 패턴에 의해 노출된 박막을 식각공정을 통하여 제거해야 한다. 이러한 식각 공정에서는 습식 식각 방법과 건식 식각 방법이 있다. 그런데, 습식 식각 공정은 식각 속도가 빠른 반면 등방성 식각 특성을 보이는 단점을 가지고 있기 때문에 초미세 선폭을 패터닝하는데는 적합하지 않다. 따라서 반도체 기판 상에 미세한 패턴을 형성하기 위하여 이방성 식각 특성이 좋고 반도체 기판을 오염시키지 않는 건식 식각 방법이 사용된다. 이러한 건식 식각 방법은 주로 플라즈마를 이용하여 식각을 진행하는데, 플라즈마를 이용한 상기 건식 식각 방법은 반응 챔버안의 온도, 압력, 반응 가스의 유입속도등과 같은 여러가지 공정 조건을 정확하게 제어해야만 원하는 프로파일을 갖는 선폭을 패터닝하는 것이 가능하다. 상기 공정조건 중 특히 진공 반응 챔버내의 온도를 정확하게 제어하기 위해 온도 센서 장착이 필수적이다.In the manufacture of a semiconductor device, in order to form a desired pattern on a semiconductor substrate, a photoresist film is applied to the upper surface of the semiconductor substrate, a photolithography process is performed, and a photoresist pattern is formed. The photoresist pattern is used as an etch mask to form a photoresist pattern. Exposed thin films must be removed by etching. In this etching process, there are a wet etching method and a dry etching method. However, the wet etching process is not suitable for patterning the ultra fine line width because it has a disadvantage that the etching speed is high while the isotropic etching characteristic is exhibited. Therefore, in order to form a fine pattern on the semiconductor substrate, a dry etching method having good anisotropic etching characteristics and not contaminating the semiconductor substrate is used. In the dry etching method, etching is mainly performed using plasma. In the dry etching method using plasma, a line width having a desired profile must be precisely controlled in various process conditions such as temperature, pressure, inflow rate of reaction gas, etc. in the reaction chamber. It is possible to pattern In particular, the temperature sensor is essential to precisely control the temperature in the vacuum reaction chamber.

도 1은 종래기술의 문제점을 설명하기 위하여 건식식각 장치 하부 구조를 나타낸 단면도이다.1 is a cross-sectional view showing a dry etching apparatus lower structure to explain the problems of the prior art.

도 1은 종래기술의 문제점을 설명하기 위하여 건식식각 장치의 하부 구조를 개략적으로 나타낸 단면도이다. 도 1을 참고하여, 상부전극(미도시)을 구비하는 건식식각장치의 하부는 하부전극(1)과, 웨이퍼가 로딩되는 정전척(2)을 구비한다. 상기 하부전극(1)을 관통하며 상기 정전척(2) 내부에 온도 센서 홀(3)이 위치하며, 상기 온도 센서 홀(3) 안에 온도 센서(4)이 위치하여 정전척(2)의 온도를 감지한다. 정상적인 상태에서는 상기 온도 센서(4)가 상기 온도 센서 홀(3)의 중앙에 수직하도록 위치하여야 하나, 약간의 흔들림이 있으면 상기 온도센서(4)가 상기 온도 센서 홀(3) 내부에서 기울어지면서 도 1에서처럼 상기 온도 센서 홀(3)의 벽면에 닿게 된다. 상기 정전척(2)에 가해진 전압이 온도 센서(4)에 가해지면서 온도 센서를 통해 단락(short) 현상이 발생한다. 단락 현상이 발생하게 되면, 정전척에 가해지는 정전척 전압이 드랍(drop)되며, 웨이퍼를 처킹(chucking)하지 못하게 되고, 상기 건식 식각 장치 내부에서 웨이퍼 슬라이딩 현상이 발생한다.1 is a cross-sectional view schematically showing the lower structure of the dry etching apparatus in order to explain the problems of the prior art. Referring to FIG. 1, a lower portion of a dry etching apparatus having an upper electrode (not shown) includes a lower electrode 1 and an electrostatic chuck 2 on which a wafer is loaded. A temperature sensor hole 3 is positioned inside the electrostatic chuck 2 and penetrates the lower electrode 1, and a temperature sensor 4 is located in the temperature sensor hole 3 to set the temperature of the electrostatic chuck 2. Detect it. In the normal state, the temperature sensor 4 should be positioned perpendicular to the center of the temperature sensor hole 3, but if there is slight shaking, the temperature sensor 4 is inclined inside the temperature sensor hole 3 As in 1, the wall of the temperature sensor hole 3 is touched. As the voltage applied to the electrostatic chuck 2 is applied to the temperature sensor 4, a short phenomenon occurs through the temperature sensor. When a short circuit occurs, the electrostatic chuck voltage applied to the electrostatic chuck drops, the wafer is not chucked, and a wafer sliding phenomenon occurs inside the dry etching apparatus.

따라서, 본 발명이 이루고자 하는 기술적 과제는 정전척과의 전기적인 단락 현상을 방지할 수 있는 온도센서를 구비하는 반도체 제조 장비를 제공하고자 한다.Accordingly, an aspect of the present invention is to provide a semiconductor manufacturing apparatus having a temperature sensor capable of preventing an electrical short circuit with an electrostatic chuck.

도 1은 종래기술의 문제점을 설명하기 위하여 건식식각장치의 하부 구조를 나타내는 개략적인 단면도이다.1 is a schematic cross-sectional view showing a lower structure of a dry etching apparatus in order to explain the problems of the prior art.

도 2a는 본 발명의 실시예에 의한 건식식각장치의 개략적인 단면도를 나타낸다.Figure 2a is a schematic cross-sectional view of a dry etching apparatus according to an embodiment of the present invention.

도 2b는 본 발명의 실시예에 의한 건식식각장치의 하부 구조를 확대한 개략적인 단면도이다.2B is an enlarged schematic cross-sectional view of a lower structure of the dry etching apparatus according to the embodiment of the present invention.

상기 기술적 과제를 달성하기 위하여, 본 발명의 반도체 제조장비는 웨이퍼가 로딩되는 정전척(ElectroStatic Chuck:ESC); 상기 정전척의 하부면에 부착된 하부전극; 상기 정전척의 상부에 설치된 상부전극; 및 상기 하부 전극을 관통하며 상기 정전척 내에 위치하는 온도 센서 홀안의 온도센서를 구비하며, 상기 온도 센서는 절연물질로 코팅된다.In order to achieve the above technical problem, the semiconductor manufacturing apparatus of the present invention is an electrostatic chuck (ESC) is loaded wafer; A lower electrode attached to the lower surface of the electrostatic chuck; An upper electrode installed above the electrostatic chuck; And a temperature sensor in a temperature sensor hole penetrating the lower electrode and positioned in the electrostatic chuck, wherein the temperature sensor is coated with an insulating material.

이하, 첨부한 도면들을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 본 발명의 바람직한 실시예에서는 정전척을 구비하며 온도센서가 장착된 반도체 제조 장비 중 대표적인 장비로 건식 식각 장치를 설명한다. 그러나, 본 발명은 여기서 설명되어지는 실시예에 한정되지 않고 다른 형태로 구체화될 수도 있다. 오히려, 여기서 소개되는 실시예는 개시된 내용이 철저하고 완전해질 수 있도록 그리고 당업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 제공되어지는 것이다. 예를 들면, 본 발명은 증착 장비 및 스퍼터링 장비 등에 적용될 수 있다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the preferred embodiment of the present invention will be described a dry etching apparatus as a representative of the semiconductor manufacturing equipment having an electrostatic chuck and equipped with a temperature sensor. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the invention will be fully conveyed to those skilled in the art. For example, the present invention can be applied to deposition equipment and sputtering equipment.

도 2a는 본 발명의 실시예에 의한 건식식각장치의 개략적인 단면도를 나타낸다. 도 2b는 본 발명의 실시예에 의한 건식식각장치의 하부 구조를 확대한 개략적인 단면도이다.Figure 2a is a schematic cross-sectional view of a dry etching apparatus according to an embodiment of the present invention. 2B is an enlarged schematic cross-sectional view of a lower structure of the dry etching apparatus according to the embodiment of the present invention.

도 2a 및 도 2b를 참고하여, 건식 식각 장치(10)안에 상부에 상부전극(30)이 위치하고, 하부에 하부전극(50)이 위치하여 식각에 사용되는 가스들의 이온이 화살표 방향으로 이동한다. 상기 하부전극 상에 정전기를 이용하여 웨이퍼를 고정시키는 정전척(70)이 위치하고 상기 정전척(70) 위에 처리할 웨이퍼(W)가 놓이게 되어 건식식각 공정을 진행된다. 상기 하부전극(50)을 관통하며 상기 정전척(70) 내부에 온도 센서 홀(90)이 위치하며, 상기 온도 센서 홀(90) 안에 온도 센서(110)이 위치하여 상기 정전척(70)의 온도를 감지한다. 상기 온도 센서(110)은 절연막(130)으로 코팅되어 있다. 여기서 상기 절연막은(130)은 내열성 합성수지, 세라믹(ceramic), 실리콘(silicone), 폴리이미드(polyimide)수지 중에서 하나 선택되는 절연물질로 이루어진다. 상기 절연막은 0.1mm~2mm의 두께를 갖는다. 이렇게 상기 절연물질로 코팅된 상기 온도 센서(110)는 상기 온도 센서 홀(90)안에서 흔들림에 의해 기울어져도 주변의 정전척과 전류가 통하지 않기에 단락현상은 발생하지 않는다.2A and 2B, in the dry etching apparatus 10, an upper electrode 30 is positioned at an upper portion and a lower electrode 50 is positioned at a lower portion thereof, so that ions of gases used for etching move in the direction of an arrow. An electrostatic chuck 70 for fixing the wafer by using static electricity on the lower electrode is positioned, and the wafer W to be processed is placed on the electrostatic chuck 70, thereby performing a dry etching process. The temperature sensor hole 90 is positioned inside the electrostatic chuck 70 and penetrates the lower electrode 50, and the temperature sensor 110 is positioned in the temperature sensor hole 90 to determine the electrostatic chuck 70. Sense the temperature. The temperature sensor 110 is coated with an insulating film 130. Here, the insulating film 130 is made of an insulating material selected from heat resistant synthetic resin, ceramic, silicon, polyimide resin. The insulating film has a thickness of 0.1 mm to 2 mm. Thus, even if the temperature sensor 110 coated with the insulating material is inclined by shaking in the temperature sensor hole 90, a short circuit phenomenon does not occur because a current does not pass through the surrounding electrostatic chuck.

따라서 본 발명에 따라, 건식식각장치 하부의 정전척 내에 위치하는 온도센서를 절연물질로 코팅함으로써, 흔들림에 의해 기울어진다하더라도, 주변의 정전척과의 단락 현상을 방지할 수 있다.Therefore, according to the present invention, by coating the temperature sensor located in the electrostatic chuck under the dry etching device with an insulating material, even if inclined by shaking, it is possible to prevent a short circuit with the surrounding electrostatic chuck.

Claims (3)

웨이퍼가 로딩되는 정전척(ElectroStatic Chuck:ESC);An electrostatic chuck (ESC) into which the wafer is loaded; 상기 정전척의 하부면에 부착된 하부전극;A lower electrode attached to the lower surface of the electrostatic chuck; 상기 정전척의 상부에 설치된 상부전극; 및An upper electrode installed above the electrostatic chuck; And 상기 하부 전극을 관통하며 상기 정전척 내에 위치하는 온도 센서 홀안의 온도센서를 구비하며,A temperature sensor in the temperature sensor hole penetrating the lower electrode and positioned in the electrostatic chuck, 상기 온도 센서는 절연물질로 코팅된 것을 특징으로 하는 반도체 제조장비.The temperature sensor is a semiconductor manufacturing equipment, characterized in that coated with an insulating material. 제 1항에 있어서, 상기 절연물질은 내열성 합성수지, 세라믹(ceramic), 실리콘(silicone), 폴리이미드(polyimide)수지 중에서 하나 선택되는 것을 특징으로 하는 반도체 제조장비.The semiconductor manufacturing apparatus of claim 1, wherein the insulating material is selected from a heat resistant synthetic resin, a ceramic, a silicon, and a polyimide resin. 제 1항에 있어서, 상기 절연물질은 0.1mm~2mm의 두께를 갖는 것을 특징으로 하는 반도체 제조장비.The semiconductor manufacturing apparatus as claimed in claim 1, wherein the insulating material has a thickness of 0.1 mm to 2 mm.
KR1020020014949A 2002-03-20 2002-03-20 An apparatus of fabricating semiconductor devices having a temperature sensor coated with insulating material KR20030075625A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102555084A (en) * 2012-02-13 2012-07-11 日月光半导体制造股份有限公司 Perforated hole manufacturing table and perforated hole manufacturing method
US9053967B2 (en) 2012-07-11 2015-06-09 Samsung Electronics Co., Ltd. Apparatus for testing a wafer in a wafer testing process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102555084A (en) * 2012-02-13 2012-07-11 日月光半导体制造股份有限公司 Perforated hole manufacturing table and perforated hole manufacturing method
US9053967B2 (en) 2012-07-11 2015-06-09 Samsung Electronics Co., Ltd. Apparatus for testing a wafer in a wafer testing process

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