KR20030073935A - Method of monitoring thickness of thin film formed on semiconductor wafer - Google Patents

Method of monitoring thickness of thin film formed on semiconductor wafer Download PDF

Info

Publication number
KR20030073935A
KR20030073935A KR1020020013721A KR20020013721A KR20030073935A KR 20030073935 A KR20030073935 A KR 20030073935A KR 1020020013721 A KR1020020013721 A KR 1020020013721A KR 20020013721 A KR20020013721 A KR 20020013721A KR 20030073935 A KR20030073935 A KR 20030073935A
Authority
KR
South Korea
Prior art keywords
thickness
wafer
measuring
thin film
stage
Prior art date
Application number
KR1020020013721A
Other languages
Korean (ko)
Inventor
이병범
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020020013721A priority Critical patent/KR20030073935A/en
Publication of KR20030073935A publication Critical patent/KR20030073935A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)

Abstract

PURPOSE: A method for measuring the thickness of a thin film formed on a semiconductor wafer is provided to reduce a time loss that a reference value is determined before a loaded silicon wafer is unloaded, by determining the reference value while using a silicon chip attached to a stage of thickness measuring equipment. CONSTITUTION: The wafer whose thickness is to be measured is loaded into the stage(100) of the thickness measuring equipment. The reference value in measuring the thickness is set up by using the silicon chip positioned in the stage. The thickness of the wafer loaded into the stage is measured. The wafer is unloaded.

Description

반도체 웨이퍼에 형성된 박막 두께 측정 방법{METHOD OF MONITORING THICKNESS OF THIN FILM FORMED ON SEMICONDUCTOR WAFER}METHODS OF MONITORING THICKNESS OF THIN FILM FORMED ON SEMICONDUCTOR WAFER}

본 발명은 반도체 웨이퍼에 형성된 박막 두께의 측정방법에 관한 것으로, 특히 실리콘 칩을 이용한 반도체 웨이퍼에 형성된 박막 두께 측정방법에 관한 것이다.The present invention relates to a method for measuring thin film thickness formed on a semiconductor wafer, and more particularly, to a method for measuring thin film thickness formed on a semiconductor wafer using a silicon chip.

일반적으로 반도체소자의 제조시의 금속 증착 공정 또는 절연막 증착 등의 증착 공정을 마친 후에는 증착막의 두께가 적정수준인지 여부를 스펙트로미터에서 검사하게 된다. 검사 후에 이상이 없을 시에 다음 공정으로 진행되게 된다. 박막증착 공정의 모니터링 방법은 별도의 모니터링 웨이퍼를 사용하거나 런 웨이퍼(run wafer)의 측정용 패턴에서 두께를 측정하고 있다.In general, after the deposition process such as metal deposition or insulating film deposition in the manufacture of a semiconductor device is inspected by a spectrometer whether the thickness of the deposited film is an appropriate level. If there is no abnormality after the inspection, the process proceeds to the next step. The monitoring method of the thin film deposition process uses a separate monitoring wafer or measures the thickness in the measurement pattern of the run wafer (run wafer).

두께를 측정하는 계측 장비 중 매뉴얼 로딩(manual loading) 시스템의 두께 측정 장비는 박막 형성 공정을 진행한 후에 두께를 측정할 때마다 실리콘 웨이퍼로 기준값을 설정하여야 한다. 즉, 박막이 형성된 두께를 측정하고자 하는 웨이퍼를 장비에 로딩(loading)할 때마다 실리콘 웨이퍼를 먼저 장비에 로딩(loading)하여 기준값을 설정하여야 한다.Among the measuring equipment for measuring thickness, the thickness measuring equipment of a manual loading system has to set a reference value with a silicon wafer every time the thickness is measured after the thin film forming process. That is, whenever a wafer to be measured for the thickness on which a thin film is formed is loaded into a device, a silicon wafer should be loaded into the device first to set a reference value.

구체적으로 두께를 측정하는 방법을 살펴보면, i) 두께 측정 장비에서 두께를 측정하기 위한 프로그램을 선택하는 단계, ii) 실리콘 웨이퍼를 두께 측정 장비로 로딩(loading)하는 단계, iii) 실리콘 웨이퍼를 이용하여 기준값을 설정하는 단계, iv) 실리콘 웨이퍼를 두께 측정 장비에서 언로딩(unloading)하는 단계, v) 박막이 형성된 웨이퍼를 두께 측정 장비로 로딩하는 단계, vi) 박막이 형성된 웨이퍼의 두께를 측정하는 단계, vii) 박막이 형성된 웨이퍼를 두께 측정 장비에서 언로딩하는 단계로 이루어진다.Specifically, a method of measuring thickness includes: i) selecting a program for measuring thickness in a thickness measuring device, ii) loading a silicon wafer into the thickness measuring device, and iii) using a silicon wafer. Setting a reference value, iv) unloading the silicon wafer in a thickness measurement instrument, v) loading the wafer on which the thin film is formed into the thickness measurement instrument, vi) measuring the thickness of the wafer on which the thin film is formed and vii) unloading the wafer on which the thin film is formed in the thickness measurement equipment.

상술한 종래의 박막 두께 측정방법은 매번 측정할 때마다 실리콘 웨이퍼로 기준값을 설정하여야 하므로, 작업 시간의 손실(loss)이 발생하여 시간당 두께를 측정할 수 있는 웨이퍼의 매수가 줄어들게 된다. 이는 새로운 장비 투자로 이어져 비용면에서 많은 손실(loss)을 유발한다.In the above-described conventional thin film thickness measuring method, a reference value must be set with a silicon wafer every time the measurement is performed, so that a loss of working time occurs, thereby reducing the number of wafers for measuring the thickness per hour. This leads to new equipment investments, resulting in a large loss in cost.

본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로, 매뉴얼 시스템의 두께 측정 장비에 있어서 두께 측정시마다 실리콘 웨이퍼로 기준값을 설정하지 않아도 되는 반도체 웨이퍼에 형성된 박막의 두께 측정 방법을 제공하는데 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a method for measuring the thickness of a thin film formed on a semiconductor wafer which does not require setting a reference value with a silicon wafer every time the thickness is measured in the thickness measuring equipment of the manual system. .

도 1은 본 발명에 따른 두께 측정 장비의 내부에 위치하는 웨이퍼가 로딩되는 스테이지부를 나타내는 평면도,1 is a plan view showing a stage portion loaded with a wafer located inside the thickness measuring apparatus according to the present invention;

도 2는 본 발명에 따른 기준 실리콘 칩부를 나타내는 확대도이다.2 is an enlarged view illustrating a reference silicon chip unit according to the present invention.

*도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

100 : 스테이지부 105 : 웨이퍼 로딩부100: stage portion 105: wafer loading portion

110 : 트위저 홈 120 : 기준 실리콘 칩부110: tweezer groove 120: reference silicon chip

상기 목적을 달성하기 위하여, 본 발명의 매뉴얼 시스템의 두께 측정 장비를 이용한 두께 측정 방법은 먼저, 두께를 측정하고자 하는 웨이퍼를 두께 측정 장비의 스테이지로 로딩한다. 상기 스테이지 내에 위치하는 실리콘 칩을 이용하여 두께 측정의 기준값을 설정하고, 상기 스테이지에 로딩된 웨이퍼의 두께를 측정한다. 이어서, 상기 두께를 측정한 웨이퍼를 언로딩 시킨다.In order to achieve the above object, the thickness measuring method using the thickness measuring equipment of the manual system of the present invention, first, load the wafer to be measured on the thickness of the stage of the thickness measuring equipment. The silicon chip positioned in the stage is used to set a reference value of the thickness measurement, and the thickness of the wafer loaded on the stage is measured. Next, the wafer whose thickness was measured is unloaded.

본 발명에 있어서, 상기 실리콘 칩은 가로 세로 각각 10mm 내지 15mm의 범위로 형성된 사각형으로 형성하는 것이 바람직하며, 실리콘의 표면에는 충분한 자연 산화막이 형성되어 있는 것이 바람직하다.In the present invention, the silicon chip is preferably formed in a quadrangle formed in the range of 10mm to 15mm, respectively, and preferably a sufficient natural oxide film is formed on the surface of the silicon.

상술한 목적, 특징들 및 장점은 첨부된 도면과 관련한 다음의 상세한 설명을 통하여 보다 분명해 질 것이다. 이하, 첨부된 도면을 참조하여 본 발명에 따른 바람직한 일실시예를 상세히 설명한다.The above objects, features and advantages will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

본 발명의 일실시예에서는 별도로 실리콘 웨이퍼를 두께 측정 장비에 로딩하여 기준값을 설정하는 단계를 생략할 수 있는 두께 측정 방법을 제공한다.One embodiment of the present invention provides a thickness measurement method which can omit the step of setting a reference value by separately loading the silicon wafer in the thickness measurement equipment.

도 1은 본 발명에 따른 두께 측정 장비의 내부에 위치하는 웨이퍼가 로딩되는 스테이지부를 나타내는 평면도이다.1 is a plan view illustrating a stage unit in which a wafer located in a thickness measuring apparatus according to the present invention is loaded.

도 1을 참조하면, 스테이지부(100)에 웨이퍼 로딩부(105)가 형성되어 있고상기 웨이퍼 로딩부(105)에는 웨이퍼 집게(tweezer) 또는 웨이퍼 자동 이송 장치(auto loader)를 이용하여 웨이퍼를 로딩 또는 언로딩하는 트위저 홈(110)이 형성되어 있다.Referring to FIG. 1, a wafer loading unit 105 is formed in a stage unit 100, and the wafer loading unit 105 is loaded using a wafer tweezer or a wafer auto loader. Or unloading the tweezer groove 110 is formed.

상기 웨이퍼 로딩부(105)의 상부에는 별도의 기준 실리콘 칩부(120)가 부착되어 있다.A separate reference silicon chip unit 120 is attached to the upper portion of the wafer loading unit 105.

도 2는 본 발명에 따른 상기 기준 실리콘 칩부(120)를 나타내는 확대도인데, 실리콘 보조판(200)에 실리콘 칩(210)이 부착되어 있다. 상기 실리콘 보조판(200)은 가로, 세로 각각 15mm이며, 상기 실리콘 보조판(200)에 부착된 실리콘 칩(210)은 가로, 세로 각각 10mm의 크기로 형성되어 있다. 상기 실리콘 칩(210)은 다양한 크기로 형성할 수 있으며 가로 세로 각각 10mm 내지 15mm의 범위로 형성된 사각형으로 형성되는 것이 바람직하다.2 is an enlarged view illustrating the reference silicon chip unit 120 according to the present invention, and the silicon chip 210 is attached to the silicon auxiliary plate 200. The silicon auxiliary plate 200 is 15 mm in width and length, respectively, and the silicon chip 210 attached to the silicon auxiliary plate 200 is formed in a size of 10 mm in width and length, respectively. The silicon chip 210 may be formed in various sizes and is preferably formed as a quadrangle formed in a range of 10 mm to 15 mm in width and length.

이하 상술한 바와 같은 스테이지부가 형성된 두께 측정 장비를 이용한 두께 측정 방법을 상술한다.Hereinafter, the thickness measuring method using the thickness measuring equipment having the stage portion as described above will be described in detail.

먼저, 두께 측정 장비에 두께 측정을 위한 프로그램을 설정한다.First, set up a program for thickness measurement on the thickness measurement equipment.

이어서, 상기 스테이지부(100)의 웨이퍼 로딩부(105)에 웨이퍼 집게 또는 자동 이송 장치를 이용하여 박막의 두께를 측정하고자 하는 웨이퍼를 로딩한다.Subsequently, the wafer loading unit 105 of the stage unit 100 is loaded with a wafer whose thickness is to be measured using a wafer tong or an automatic transfer device.

이어서, 상기 웨이퍼 로딩부(105)의 상부에 형성된 기준 실리콘칩부(120)의 실리콘칩(210)을 이용하여 기준값을 설정한다.Subsequently, a reference value is set using the silicon chip 210 of the reference silicon chip unit 120 formed on the wafer loading unit 105.

이어서, 상기 로딩된 웨이퍼의 두께를 측정한다.Then, the thickness of the loaded wafer is measured.

이어서, 상기 로딩된 웨이퍼를 언로딩한다.The loaded wafer is then unloaded.

상술한 본 발명의 두께 측정방법은 종래의 방법에 대비하여, 별도의 실리콘 웨이퍼를 로딩하여 기준값을 설정하는 단계를 생략할 수가 있어서 두께를 측정하는데 필요한 시간 손실을 보상할 수 있다. 즉, 상기 스테이지부(100)에 부착된 기준 실리콘 칩부(120)의 실리콘 칩(210)이 실리콘 웨이퍼의 역할을 하게 된다. 상기 실리콘 칩(210)은 오랜 시간 대기 중에 노출되어 자연 산화막이 충분히 형성된 것을 사용하는 것이 바람직한다. 이는 순수한 실리콘 칩을 사용할 경우에는 측정 과정에서 자연 산화막이 형성되고 이로 인하여 두께 측정의 편차가 발생할 수 있기 때문이다.Compared to the conventional method, the thickness measuring method of the present invention can omit the step of setting a reference value by loading a separate silicon wafer, thereby compensating for time loss necessary for measuring thickness. That is, the silicon chip 210 of the reference silicon chip part 120 attached to the stage part 100 serves as a silicon wafer. The silicon chip 210 may be exposed to the air for a long time, so that a natural oxide film is sufficiently formed. This is because when a pure silicon chip is used, a natural oxide film is formed during the measurement process, which may cause variation in thickness measurement.

이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.

상기와 같이 이루어진 본 발명은, 종래의 두께 측정 방법에서 실리콘 웨이퍼를 로딩하여 기준값을 설정하는 방법에 대비하여 두께 측정 장비의 스테이지부에 부착된 실리콘 칩을 이용하여 기준값을 설정함으로써 실리콘 웨이퍼를 로딩하여 기준값을 설정하고 언로딩하는 시간적 손실을 줄일 수 있는 효과가 있다.The present invention made as described above, by loading the silicon wafer by setting the reference value using a silicon chip attached to the stage portion of the thickness measurement equipment in contrast to the method of loading the silicon wafer in the conventional thickness measurement method The time loss of setting and unloading the reference value can be reduced.

Claims (3)

매뉴얼 시스템의 두께 측정 장비를 이용한 두께 측정 방법에 있어서,In the thickness measurement method using the thickness measurement equipment of the manual system, 두께를 측정하고자 하는 웨이퍼를 두께 측정 장비의 스테이지로 로딩하는 단계;Loading a wafer whose thickness is to be measured onto a stage of thickness measuring equipment; 상기 스테이지 내에 위치하는 실리콘 칩을 이용하여 두께 측정의 기준값을 설정하는 단계;Setting a reference value of a thickness measurement by using a silicon chip positioned in the stage; 상기 스테이지에 로딩된 웨이퍼의 두께를 측정하는 단계; 및Measuring a thickness of the wafer loaded on the stage; And 상기 두께를 측정한 웨이퍼를 언로딩 시키는 단계를 포함하는 반도체 웨이퍼에 형성된 박막 두께의 측정방법.The method of measuring the thickness of a thin film formed on a semiconductor wafer comprising the step of unloading the wafer measuring the thickness. 제 1 항에 있어서,The method of claim 1, 상기 실리콘 칩은 가로 세로 각각 10mm 내지 15mm의 범위로 형성된 사각형으로 형성되는 것을 특징으로 하는 반도체 웨이퍼에 형성된 박막 두께의 측정방법.The silicon chip is a thin film thickness measuring method formed on a semiconductor wafer, characterized in that formed in a square formed in a range of 10mm to 15mm each. 제 1 항에 있어서,The method of claim 1, 상기 실리콘 칩은 충분한 자연 산화막이 형성되어 있는 것을 특징으로 하는 반도체 웨이퍼에 형성된 박막 두께의 측정방법.The silicon chip is a method for measuring the thickness of a thin film formed on a semiconductor wafer, characterized in that a sufficient natural oxide film is formed.
KR1020020013721A 2002-03-14 2002-03-14 Method of monitoring thickness of thin film formed on semiconductor wafer KR20030073935A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020020013721A KR20030073935A (en) 2002-03-14 2002-03-14 Method of monitoring thickness of thin film formed on semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020020013721A KR20030073935A (en) 2002-03-14 2002-03-14 Method of monitoring thickness of thin film formed on semiconductor wafer

Publications (1)

Publication Number Publication Date
KR20030073935A true KR20030073935A (en) 2003-09-19

Family

ID=32224721

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020013721A KR20030073935A (en) 2002-03-14 2002-03-14 Method of monitoring thickness of thin film formed on semiconductor wafer

Country Status (1)

Country Link
KR (1) KR20030073935A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100805233B1 (en) * 2007-01-22 2008-02-21 삼성전자주식회사 An apparatus for measuring thickness of thin flim on wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100805233B1 (en) * 2007-01-22 2008-02-21 삼성전자주식회사 An apparatus for measuring thickness of thin flim on wafer

Similar Documents

Publication Publication Date Title
KR20030016372A (en) Method for maintaining processor, method of automatically inspecting processor and method of automatically resetting processor, method for self-diagnosing software for driving processor
KR20100063786A (en) Wafer bow metrology arrangements and methods thereof
US8131057B2 (en) Defect distribution pattern comparison method and system
KR20030073935A (en) Method of monitoring thickness of thin film formed on semiconductor wafer
JP2005286102A (en) Vacuum processing equipment and vacuum processing method
JP2002025878A (en) Automatic inspection method and automatic restoration method for processor
US6518785B2 (en) Method for monitoring an amount of heavy metal contamination in a wafer
JPH11220004A (en) Wafer processing system
KR100779922B1 (en) Semiconductor device inspection system
US6275293B1 (en) Method for measurement of OSF density
KR100621622B1 (en) Wafer transaction method
KR100689696B1 (en) semiconductor device manufacturing system and using method there of
US20030017630A1 (en) In-Line system having overlay accuracy measurement function and method for the same
US5913103A (en) Method of detecting metal contaminants in a wet chemical using enhanced semiconductor growth phenomena
JPH0541353A (en) Method of discriminating apparatus for wafer process use
KR19990065680A (en) Semiconductor device manufacturing device that can be screwed in
KR20030051128A (en) Apparatus and method for producing semiconductors
KR100567623B1 (en) Method and equipment for manufacturing a semiconductor substrate
KR100519541B1 (en) Particle evaluation method of electrostatic chuck and method of evaluation of cleaning chemical transfer effect
JPS59145975A (en) Measuring method of semiconductor element
KR20020029799A (en) Wafer arm having wafer position designation line
KR19990000828A (en) Wafer measurement system
CN115831792A (en) Wafer defect detection method
KR20010073742A (en) Method for testing semiconductor
KR0127661B1 (en) Automatic exposure method using the reticle for semiconductor fabrication

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination