KR20030071024A - Rinse appatraus of wafer - Google Patents

Abstract

PURPOSE: An apparatus for rinsing a semiconductor wafer is provided to improve cleaning efficiency and shorten an interval of cleaning time by effectively eliminating the particles on the wafer. CONSTITUTION: A chamber(30) is prepared. A spin chuck(32) fixes and rotates a cleaning target material, received in the chamber. A nozzle is installed in a position over the spin chuck so that deionized water can be sprayed on the cleaning target material on the spin chuck. The nozzle is composed of a plurality of nozzles(38,40).

Description

Semiconductor wafer rinsing equipment {Rinse appatraus of wafer}

The present invention relates to a semiconductor wafer rinsing apparatus, and more particularly, to a semiconductor wafer rinsing apparatus capable of improving the rinsing effect of the wafer and shortening the rinsing time.

Recently, with the development of semiconductor manufacturing technology, as semiconductor devices are highly integrated from 16MDRAM to 64MDRAM, 256MDRAM, and 1GDRAM, the circuit dimension by a photolithography process is managed to be 0.2 μm or less.

In this case, in the photolithography process, a photoresist is coated on a semiconductor substrate on which a thin film is formed, followed by an exposure and development process to implement a predetermined photoresist pattern, and the photoresist pattern. Using an etching mask to etch the thin film.

After the development, a cleaning process of rinsing deionized water in the photoresist remaining on the semiconductor substrate is performed.

The conventional semiconductor wafer rinsing apparatus includes a chamber 10 as shown in FIG. 1, and a spin chuck 12 that rotates by driving a driving source (not shown) in the center of the chamber 10. ) Is implied.

At this time, the spin chuck 12 is capable of adsorbing and fixing the wafer 2 to be cleaned on the surface by a pumping force transmitted to the upper surface through the vacuum line 14, and on the bottom of the chamber 10. An exhaust line 16 is formed.

Further, a bar type first nozzle 18 and a second nozzle 20 capable of supplying a predetermined amount of deionized water to the surface of the wafer 2 are provided above the spin chuck 12.

Therefore, when the wafer 2 subjected to the developing process of the photolithography process is positioned on the spin chuck 12 by a moving means such as a robot arm, pumping force is applied to the wafer 2 through the vacuum line 14. The wafer 2 is transferred and fixed to the spin chuck 12.

When the spin chuck 12 is rotated at a predetermined speed by driving of a driving source, the first nozzle 18 and the second nozzle 20 supply a predetermined amount of deionized water to the surface of the wafer 2. Foreign substances on the surface of the wafer 2 are cleaned.

In addition, the deionized water from which the foreign matter is removed is discharged to the outside through the exhaust line 16 of the bottom of the chamber 10.

However, the conventional semiconductor wafer rinsing device has a problem in that a bar type first nozzle and a second nozzle are provided so that a sufficient amount of deionized water cannot be supplied to a minute gap on the wafer surface.

Therefore, foreign matter on the surface of the wafer is not effectively removed, so that the cleaning efficiency is lowered and the cleaning time is long.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor wafer rinsing apparatus capable of effectively removing foreign matter on the wafer surface in a short time and improving the cleaning efficiency.

1 is a schematic configuration diagram of a conventional semiconductor wafer rinse apparatus.

2 is a block diagram of a semiconductor wafer rinsing apparatus according to an embodiment of the present invention.

※ Explanation of codes for main parts of drawing

2, 4: wafer 10, 30: chamber

12, 32: spin chuck 14, 34: vacuum line

16, 36 exhaust line 18, 38 first nozzle

20, 40: second nozzle

The semiconductor wafer rinsing apparatus according to the present invention for achieving the above object, the chamber; A spin chuck accommodated in the chamber and capable of fixedly rotating the cleaning object; And a nozzle provided on the spin chuck so as to spray-deliver deionized water onto the object to be cleaned on the spin chuck.

Here, the nozzle may be provided in plurality.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a block diagram of a semiconductor wafer rinsing apparatus according to an embodiment of the present invention.

The semiconductor wafer rinsing apparatus according to the present invention, as shown in FIG. 2, has a chamber 30 with an upper portion open, and a driving source (not shown) in a through hole (not numbered) formed in the center of the chamber 30. The spin chuck 32 which rotates to one side by the drive of the said figure is built.

At this time, the spin chuck 32 is capable of adsorption and fixing the wafer 4 to be cleaned on the surface by a pumping force transmitted to the upper surface through the vacuum line 34, the bottom surface of the chamber 30 An exhaust line 36 is formed.

Further, a spray type first nozzle 38 and a second nozzle 40 capable of spraying and supplying a predetermined amount of deionized water to the surface of the wafer 4 are provided above the spin chuck 32.

Therefore, when the cleaning target wafer 4 in which the developing process of the photolithography process is performed is positioned on the spin chuck 32 by a moving means such as a robot arm, the pumping force is applied to the wafer 4 through the vacuum line 34. The wafer 4 is sucked and fixed to the spin chuck 32.

When the spin chuck 32 is rotated at a predetermined speed by the driving of the driving source, the spray type first nozzle 38 and the second nozzle 40 have a predetermined amount of deionized water on the surface of the wafer 4. Injection to clean the foreign matter on the wafer surface.

At this time, the deionized water moves from the center of the wafer 4 to the outer edge of the wafer 4 by centrifugal force caused by the rotation of the wafer 4 to remove foreign matter on the surface of the wafer 4.

In particular, according to the present invention, the first nozzle 38 and the second nozzle 40 are spray-delivered with deionized water by the spray type, so that a sufficient amount of deionized water is supplied to the inside of the minute gap on the surface of the wafer 4. Not only the cleaning effect is excellent, but the cleaning time is also shortened.

In addition, the deionized water from which the foreign matter is removed is discharged to the outside through the exhaust line 36 of the chamber 30 by falling to the bottom of the chamber 30.

According to the present invention, it is possible to effectively remove foreign substances on the surface of the wafer to improve the cleaning efficiency as well as to shorten the cleaning time.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and such modifications and modifications belong to the appended claims.

Claims (2)

chamber; A spin chuck accommodated in the chamber and capable of fixedly rotating the cleaning object; And A nozzle provided on the spin chuck to spray-deliver deionized water onto a cleaning object on the spin chuck; A semiconductor wafer rinsing apparatus comprising a. The semiconductor wafer rinsing apparatus according to claim 1, wherein a plurality of nozzles are provided.