KR20030070373A - Ashing apparatus having door structure for semiconductor manufacturing - Google Patents

Ashing apparatus having door structure for semiconductor manufacturing Download PDF

Info

Publication number
KR20030070373A
KR20030070373A KR1020020009895A KR20020009895A KR20030070373A KR 20030070373 A KR20030070373 A KR 20030070373A KR 1020020009895 A KR1020020009895 A KR 1020020009895A KR 20020009895 A KR20020009895 A KR 20020009895A KR 20030070373 A KR20030070373 A KR 20030070373A
Authority
KR
South Korea
Prior art keywords
door
processing chamber
opening
ashing
vacuum
Prior art date
Application number
KR1020020009895A
Other languages
Korean (ko)
Inventor
조철한
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020020009895A priority Critical patent/KR20030070373A/en
Publication of KR20030070373A publication Critical patent/KR20030070373A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32513Sealing means, e.g. sealing between different parts of the vessel
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/427Stripping or agents therefor using plasma means only

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: An ashing apparatus with an improved door structure for fabricating a semiconductor is provided to shorten an interval of vacuum set time and to prevent a vacuum error by making a door closely attached to a chamber within a short interval of time. CONSTITUTION: A predetermined space for performing an ashing process is formed in a process chamber(11). An upward and downward driving door(23) is vertically transferred by the first driver unit(21) to open or close an opening(11a) through which a wafer is loaded or unloaded, installed in a side of the process chamber. A forward and backward driving door(25) moves up and down according to the operation of the upward and downward driving door. The forward and backward driving door is driven forward and backward by the second driver unit(27) when located in the position of the opening to be closely attached to the outer wall of the process chamber including the opening.

Description

도어구조가 개선된 반도체 제조용 애싱장치{ASHING APPARATUS HAVING DOOR STRUCTURE FOR SEMICONDUCTOR MANUFACTURING}Ashing device for semiconductor manufacturing with improved door structure {ASHING APPARATUS HAVING DOOR STRUCTURE FOR SEMICONDUCTOR MANUFACTURING}

본 발명은 도어구조가 개선된 반도체 제조용 애싱장치에 관한 것으로서, 더욱 상세하게는 처리챔버로부터 웨이퍼를 인출·입시키는 개구를 개폐시키는 도어의구조를 개선하여 잦은 설비 에러가 발생되는 것을 방지함과 아울러 처리챔버 내부의 진공도를 유지를 좋게 하고 구동시 소음이 발생하는 것을 해소시키는 도어구조가 개선된 반도체 제조용 애싱장치에 관한 것이다.The present invention relates to an ashing apparatus for manufacturing a semiconductor having an improved door structure, and more particularly, to improve the structure of a door that opens and closes an opening for drawing and inserting a wafer from a processing chamber, thereby preventing frequent equipment errors from occurring. The present invention relates to an ashing apparatus for manufacturing a semiconductor having an improved door structure that maintains a degree of vacuum inside a processing chamber and eliminates noise generated during driving.

일반적으로 반도체 기판에 소정의 회로를 구성하기 위한 방법으로서, 반도체 기판상에 포토레지스트를 형성한 후 소정의 패턴으로 식각하여 마스크를 제조한 다음, 이 마스크를 식각방법으로 이용한 식각공정을 실시하여 반도체 기판상에 소정 패턴의 회로를 구성하게 된다. 그리고 패터닝된 포토레지스트를 제거한다.In general, a method for forming a predetermined circuit on a semiconductor substrate, a photoresist is formed on the semiconductor substrate and then etched in a predetermined pattern to produce a mask, followed by an etching process using the mask as an etching method A circuit of a predetermined pattern is formed on the substrate. The patterned photoresist is then removed.

여기서, 패터닝된 포토레지스트를 제거하는 방법으로는 고주파(RADIO FREQUENCE)나 마이크로 웨이브(MICRO WAVE)를 이용해서 플라즈마를 발생시켜 이 플라즈마로 포토레지스트를 제거하는 방법이 상용화되어 왔다. 즉, 플라즈마의 이온이나 레디칼 성분이 포토레지스트와 화학적인 반응을 일으킴과 아울러 그 이온들이 포토레지스트상에 충돌하면서 포토레지스트를 제거하게 된다.Here, as a method of removing the patterned photoresist, a method of generating a plasma using high frequency (RADIO FREQUENCE) or microwave (MICRO WAVE) to remove the photoresist with the plasma has been commercialized. That is, the ions or radicals of the plasma cause a chemical reaction with the photoresist and the ions collide on the photoresist to remove the photoresist.

상술한 바와 같은 애싱장치는 소정의 애싱 처리 공간을 형성하는 처리챔버의 내부에 웨이퍼를 안착시킨 후 상기 처리챔버의 내부로 산소가스를 공급하면서 고주파(RADIO FREQUENCE)나 마이크로 웨이브(MICRO WAVE)를 인가하여 플라즈마 분위기를 설정하고 그 플라즈마 분위기에서 포토레지스트를 제거한다.The ashing apparatus as described above applies a high frequency (RADIO FREQUENCE) or a microwave (MICRO WAVE) while supplying oxygen gas into the processing chamber after seating the wafer inside the processing chamber forming a predetermined ashing processing space. To set the plasma atmosphere and remove the photoresist in the plasma atmosphere.

상술한 처리챔버의 일측에는 웨이퍼를 반입/반출시키기 위한 도어가 상하로 승·하강 가능하게 설치된다.One side of the above-described processing chamber is provided with a door for carrying in / out of the wafer so as to be able to move up and down.

상기 도어(1)는 도 1a 및 도 1b에 도시된 바와 같이 도시되지 않은 구동부(예컨대, 공압실린더)에 의해 구동되어 상하로 업다운 동작을 실시하여 처리챔버(3)의 개구(3a)를 개폐시키도록 구성된다.As shown in FIGS. 1A and 1B, the door 1 is driven by an unshown drive unit (for example, a pneumatic cylinder) to perform an up and down operation to open and close the opening 3a of the processing chamber 3. It is configured to.

도면에서 미설명부호(5)는 웨이퍼를 안착시키는 히터블럭을 나타낸다.In the drawing, reference numeral 5 denotes a heater block for seating a wafer.

상기 도어(1)의 구동동작을 살펴보면, 먼저, 처리챔버(3)의 내부가 벤트되는 순간 도어(1)가 하강하여 개구(3a)를 개방하고, 도어(1)가 도 1b에 도시된 바와 같이 상승하여 개구(3a)를 페쇄시키게 되는데, 이때 처리챔버(3)와 도어(1)가 완전히 폐쇄된 상태가 아니고 공정을 진행하면서 진공펌핑을 실시하게 됨에 따라 도어(1)가 처리챔버(3)의 벽에 밀착되어 완전 폐쇄되게 된다.Referring to the driving operation of the door 1, first, as soon as the inside of the processing chamber 3 is vented, the door 1 descends to open the opening 3a, and the door 1 is shown in FIG. Ascending to close the opening (3a), the process chamber 3 and the door (1) is not completely closed, the vacuum pump is performed as the process proceeds as the door 1 is processed chamber 3 Close to the wall).

그러나, 종래에는 상술한 바와 같이 진공 펌핑을 실시하면서 도어(1)가 처리챔버(3)의 외벽에 밀착되는 구조로 됨에 따라 그 진공도를 세팅하는 시간이 지연된다는 문제점이 있고, 완전히 밀착되지 않을 경우 그 진공도 유지가 어렵다는 문제점이 있다.However, in the related art, since the door 1 is in close contact with the outer wall of the processing chamber 3 while performing the vacuum pumping as described above, there is a problem in that the time for setting the degree of vacuum is delayed. There is a problem that the vacuum is also difficult to maintain.

또한, 종래에는 상술한 바와 같이 도어(1)가 처리챔버와 완전히 밀착되지 않을 경우 소음을 발생하게 된다는 문제점이 있다.In addition, conventionally, as described above, when the door 1 is not completely in contact with the processing chamber, there is a problem that noise is generated.

따라서, 본 발명은 상술한 문제점들을 해소시키기 위하여 안출된 것으로서, 본 발명의 목적은 도어의 구조를 개선하여 챔버에 도어가 빠른 시간 내에 밀착되는 구조를 구현하여 진공도 세팅시간을 단축시킴과 아울러 진공 에러가 발생하는 것을 해소시키는 개선된 도어장치를 갖는 반도체 제조용 애싱장치를 제공하는 데 있다.Accordingly, the present invention has been made to solve the above problems, an object of the present invention is to improve the structure of the door to implement a structure in which the door is in close contact with the chamber in a short time to reduce the vacuum setting time and vacuum error To provide an ashing device for semiconductor manufacturing having an improved door device to eliminate the occurrence of.

또한, 도어가 챔버에 완전히 밀착되도록 구현함에 따라 도어 들뜸에 의해 소음이 발생하는 것을 해소시키는 개선된 도어장치를 갖는 반도체 제조용 애싱장치를제공하는 데 있다.In addition, the present invention provides an ashing device for manufacturing a semiconductor having an improved door device that eliminates the noise generated by the door lift as the door is implemented to be in close contact with the chamber.

상술한 목적을 달성하기 위하여 본 발명은 애싱공정을 실시하도록 소정의 공간을 형성하는 처리챔버와; 상기 처리챔버의 일측에 형성되어 웨이퍼를 반출입시키는 개구를 개폐시키도록 상하로 구동되는 상·하구동도어와; 상기 상·하구동도어의 구동에 따라 상하로 승하강되며, 개구의 위치에 위치하면 전·후방향으로 구동되어 상기 개구가 형성된 처리챔버의 외벽에 밀착되는 전후구동도어를 포함한다.In order to achieve the above object, the present invention includes a processing chamber for forming a predetermined space to perform the ashing process; An up and down drive door formed on one side of the processing chamber and driven up and down to open and close an opening for carrying in and out of a wafer; It moves up and down in accordance with the drive of the up and down drive door, and when positioned in the opening includes a front and rear drive door which is driven in the forward and backward direction in close contact with the outer wall of the processing chamber in which the opening is formed.

도 1a는 처리챔버의 개구를 도어가 오픈한 상태를 도시한 도면,1A shows a state in which a door is opened in an opening of a processing chamber;

도 1b는 상기 도 1a의 도어가 클로즈된 상태를 도시한 도면,FIG. 1B is a view illustrating a state in which the door of FIG. 1A is closed;

도 2는 본 발명의 일 실시 예에 의한 도어의 구조를 도시한 도면,2 is a view showing the structure of a door according to an embodiment of the present invention;

도 3은 본 발명의 일실시 예에 의한 도어가 처리챔버의 일측에 설치되는 상태를 도시한 일부 측단면도이다.Figure 3 is a partial side cross-sectional view showing a state in which the door is installed on one side of the processing chamber according to an embodiment of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

11 : 처리챔버11a: 개구11: process chamber 11a: opening

20 : 2중도어21 : 제1구동부20: double door 21: first drive unit

23 : 상·하구동도어25 : 전·후구동도어23: Up and down mouth door 25: Front and back door

27 : 제2구동부27: second drive unit

이하, 첨부된 도면 도 2 및 도 3을 참조하여 본 발명의 구성 및 작용에 대해서 자세히 설명한다.Hereinafter, with reference to the accompanying drawings, Figures 2 and 3 will be described in detail the configuration and operation of the present invention.

상기 도면에 도시된 바와 같이 내부에 웨이퍼를 수용하여 소정의 애싱공정을 실시하는 처리챔버(11)가 있고, 상기 처리챔버(11)의 일측에는 웨이퍼(미도시)가 반입되고, 반출되는 개구(11a)가 형성되어 있고, 상기 개구(11a)에는 상하 및 전후 방향으로 구동되어 상기 개구(11a)를 개폐시키는 2중도어(20)가 설치된다.As shown in the drawing, there is a processing chamber 11 for accommodating a wafer therein to perform a predetermined ashing process, and on one side of the processing chamber 11, a wafer (not shown) is loaded in and out of the opening ( 11a) is formed, and the opening 11a is provided with a double door 20 which is driven in the vertical direction and the front-rear direction to open and close the opening 11a.

상기 2중도어(20)는 제1구동부(21)(예컨대, 제1공압실린더)에 의해 상하로 구동되는 상하구동도어(23)와, 상기 상하구동도어(23)와 연결되어 상하로 동작됨과 아울러 상기 개구(11a)의 위치에서 전·후 방향으로 직선이동하는 전·후구동도어(25)로 구성된다.The double door 20 is connected to the vertical drive door 23 which is driven up and down by the first driving unit 21 (for example, the first pneumatic cylinder), and is operated up and down by being connected to the vertical drive door 23. Moreover, it is comprised by the front and rear drive doors 25 which linearly move forward and backward in the position of the said opening 11a.

상기 전·후구동도어(25)는 도면에 도시된 바와 같이 상기 상·하구동도어(23)의 내부 양측에 마련된 가이드수단(30)에 의해 전·후 방향으로 이동 가능하게 설치되고, 그 구동은 제2구동부(27 : 예컨대, 제2공압실린더)에 의해 구동된다.The front and rear drive door 25 is installed to be movable in the front and rear directions by guide means 30 provided on both sides of the upper and lower drive doors 23, as shown in the drawing. Is driven by the second driving unit 27 (for example, the second pneumatic cylinder).

상기 가이드수단(30)는 도 3에 도시된 바와 같이 상기 상·하구동도어(23)의 내면에 직립되게 설치되는 가이드레일(31)과, 상기 가이드레일(31)을 따라 이동하도록 상기 전·후구동도어(31)의 양측에 설치된 이동부재(33)로 구성된다.As illustrated in FIG. 3, the guide means 30 includes a guide rail 31 installed upright on the inner surface of the upper and lower driving doors 23 and the front and rear rails so as to move along the guide rail 31. Consists of moving members 33 provided on both sides of the rear drive door (31).

상기 도면에서 미설명부호(21a,27a)는 상·하구동도어(23) 및 전·후구동도어(21)를 지지하는 지지축을 나타낸다.In the drawing, reference numerals 21a and 27a denote support shafts for supporting the upper and lower driving doors 23 and the front and rear driving doors 21.

상술한 바와 같이 구성된 2중도어(20)는 다음과 같은 원리에 의해 동작된다.The double door 20 configured as described above is operated by the following principle.

먼저, 도시되지 않은 이송암에 의해 웨이퍼가 상기 처리챔버(11)의 내부로 인입되어 소정의 위치에 안착되면, 제1구동부(21)의 구동에 의해 상·하구동도어(23)가 상승하게 된다. 이때, 상기 상·하구동도어(23)의 내면에 설치된 전·후구동도어(25)가 상기 상·하구동도어(23)와 함께 상승한다.First, when the wafer is introduced into the processing chamber 11 by a transfer arm (not shown) and seated at a predetermined position, the upper and lower driving doors 23 are driven up by the driving of the first driving unit 21. do. At this time, the front and rear drive doors 25 installed on the inner surface of the upper and lower drive doors 23 rise together with the upper and lower drive doors 23.

다음, 상기 상·하구동도어(23)가 소정의 위치로 상승되어 상기 처리챔버(11)의 개구(11a) 위치에 도달하면, 제2구동부(27)가 구동되어 다시 전·후구동도어(25)가 처리챔버(11)의 외벽측을 향하여 이동되어 상기 외벽에 밀착된다.Next, when the upper and lower drive door 23 is raised to a predetermined position and reaches the opening 11a position of the processing chamber 11, the second driving part 27 is driven to again move the front and rear drive doors ( 25 is moved toward the outer wall side of the processing chamber 11 to be in close contact with the outer wall.

상술한 바와 같이 전·후구동도어(25)가 상기 처리챔버(11)의 외벽에 완전 밀착됨에 따라 상기 처리챔버(11)를 진공상태로 만들 경우 진공펌핑을 실시하면서 도어가 처리챔버(11)의 외벽에 밀착되었던 종래의 구조와는 달리 빠른 시간 내에 처리챔버(11) 내부를 진공상태로 셋팅하게 된다.As described above, when the front and rear drive doors 25 are completely in close contact with the outer wall of the processing chamber 11, when the processing chamber 11 is brought into a vacuum state, the door is processed while performing the vacuum pumping. Unlike the conventional structure that was in close contact with the outer wall of the inside of the processing chamber 11 is set in a vacuum state in a short time.

또한, 전후구동도어(25)를 제2구동부(27)의 동작에 의해 처리챔버(11)의 외벽에 완전 밀착시킴에 따라 도어의 들뜸에 의해 소음이 발생하게 되는 것을 해소시킬 수 있게 된다.In addition, as the front and rear drive door 25 is brought into close contact with the outer wall of the processing chamber 11 by the operation of the second drive part 27, noise generated by the lifting of the door can be eliminated.

상술한 내용에 있어, 상기 2중도어(20)가 제1,2공압실린더(21,27)에 의해 구동되는 것을 예로 들어 설명하였으나, 그 구동을 모터, 볼스크루축 및 이송너트에 의해 구현시킬 수 있을 것이다.In the above description, the dual door 20 is driven by the first and second pneumatic cylinders 21 and 27 as an example, but the driving may be implemented by a motor, a ball screw shaft, and a transfer nut. Could be.

상술한 바와 같이 본 고안은 도어를 상하로 구동되는 상·하구동도어와, 상기 상·하구동도어의 내면에 설치되어 전후로 구동되는 전·후구동도어를 갖는 2중도어를 채용함에 따라 처리챔버 내부를 빠른 시간 내에 밀폐시켜 상기 처리챔버의 진공 셋팅 시간을 줄임과 아울러 진공도 유지를 좋게 하는 이점을 갖는다.As described above, the present invention adopts a double chamber having an upper / lower driving door which drives the door up and down and a front and rear driving door which is installed on the inner surface of the upper and lower driving doors and driven back and forth. By sealing the interior within a short time to reduce the vacuum setting time of the processing chamber and has the advantage of maintaining the vacuum.

또한, 도어가 처리챔버의 외벽으로부터 들뜨는 것을 방지하여 소음이 발생하게 되는 것을 방지할 수 있는 이점을 갖는다.In addition, the door can be prevented from being lifted from the outer wall of the processing chamber to prevent noise from being generated.

이와 같이, 본 발명의 상세한 설명에서는 구체적인 실시 예에 관해 설명하였으나, 본 발명의 범주에서 벗어나지 않는 한도 내에서 여러 가지 변형이 가능함은 물론이다. 그러므로, 본 발명의 범위는 설명된 실시 예에 국한되어 정해져서는 안되며 후술하는 특허청구범위 뿐만 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.As described above, in the detailed description of the present invention, specific embodiments have been described. However, various modifications may be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims below and equivalents thereof.

Claims (1)

애싱공정을 실시하도록 소정의 공간을 형성하는 처리챔버;A processing chamber forming a predetermined space to perform the ashing process; 상기 처리챔버의 일측에 형성되어 웨이퍼를 반출입시키는 개구를 개폐시키도록 상하로 제1구동부에 의해 상하로 이송되는 상·하구동도어 및;An up / down drive door formed on one side of the processing chamber and vertically transferred up and down by the first driver to open and close an opening for carrying in and out of a wafer; 상기 상·하구동도어의 동작에 따라 상하로 승하강되며 개구의 위치에 위치하면 제2구동부에 의해 전·후방향으로 구동되어 상기 개구가 형성된 처리챔버의 외벽에 밀착되는 전·후구동도어를 포함하는 것을 특징으로 하는 도어구조가 개선된 반도체 제조용 애싱장치.In accordance with the operation of the upper and lower drive doors, the upper and lower drive doors are moved up and down when positioned at the opening position. Ashing device for semiconductor manufacturing improved door structure comprising a.
KR1020020009895A 2002-02-25 2002-02-25 Ashing apparatus having door structure for semiconductor manufacturing KR20030070373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020020009895A KR20030070373A (en) 2002-02-25 2002-02-25 Ashing apparatus having door structure for semiconductor manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020020009895A KR20030070373A (en) 2002-02-25 2002-02-25 Ashing apparatus having door structure for semiconductor manufacturing

Publications (1)

Publication Number Publication Date
KR20030070373A true KR20030070373A (en) 2003-08-30

Family

ID=32222450

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020009895A KR20030070373A (en) 2002-02-25 2002-02-25 Ashing apparatus having door structure for semiconductor manufacturing

Country Status (1)

Country Link
KR (1) KR20030070373A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008038940A1 (en) * 2006-09-27 2008-04-03 Ats Engineering Co., Ltd. Gate valve
KR100844352B1 (en) * 2007-02-12 2008-07-07 주식회사 씨어테크 Apparatus for opening and closing door of chamber
CN101517702B (en) * 2006-09-27 2011-04-06 Ats工程股份有限公司 Gate valve
KR101423522B1 (en) * 2012-03-29 2014-08-01 주식회사 테라세미콘 Apparatus for processing substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008038940A1 (en) * 2006-09-27 2008-04-03 Ats Engineering Co., Ltd. Gate valve
CN101517702B (en) * 2006-09-27 2011-04-06 Ats工程股份有限公司 Gate valve
KR100844352B1 (en) * 2007-02-12 2008-07-07 주식회사 씨어테크 Apparatus for opening and closing door of chamber
KR101423522B1 (en) * 2012-03-29 2014-08-01 주식회사 테라세미콘 Apparatus for processing substrate

Similar Documents

Publication Publication Date Title
US6035804A (en) Process chamber apparatus
KR101125430B1 (en) Workpiece de-chucking device of plasma reactor for dry-cleaning the inside of chamber and electro static chuck during de-chucking workpiece, and workpiece de-chucking method of the same
TWI437659B (en) A substrate stage and a substrate processing device
KR100853573B1 (en) Substrate processing apparatus and substrate processing system
KR20140050664A (en) Semiconductor manufacturing device and processing method
KR100196036B1 (en) Plasma treating apparatus and operating method therefor
CN107799389B (en) Substrate processing method
KR20030070373A (en) Ashing apparatus having door structure for semiconductor manufacturing
JP4239990B2 (en) Plasma processing equipment
JP4531247B2 (en) Vacuum processing equipment
KR100544490B1 (en) Appararus for treatment works under vacuum
KR100734778B1 (en) apparatus and method for treating a substrate by plasma
KR100572131B1 (en) Plasma Etching Apparatus for Simultaneous Etching of Edge, Bevel and Back-side of Silicon Wafer
KR20050119789A (en) Plasma etcher
KR20070002252A (en) Apparatus for processing a substrate using a plasma
KR101256485B1 (en) Processing chamber for substrate processing apparatus
KR100646105B1 (en) Pin for lifting substrate
KR100790792B1 (en) Wafer transfer device
KR100761771B1 (en) The processing chamber
KR100631479B1 (en) Inductively coupled plasma treatment apparatus
KR20160062626A (en) Process chamber having dual exhaust and substrate manufacturing apparatus and substrate manufacturing method
KR100706253B1 (en) Substrate treating method
KR100243013B1 (en) Semiconductor ashing apparatus
KR100243736B1 (en) Ozone ashing apparatus
CN105174161B (en) A kind of specimen holder turning device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination