KR20030063489A - 높은 흡수율을 갖는 볼로미터 어레이용 광대역 픽셀 - Google Patents
높은 흡수율을 갖는 볼로미터 어레이용 광대역 픽셀 Download PDFInfo
- Publication number
- KR20030063489A KR20030063489A KR10-2003-7008906A KR20037008906A KR20030063489A KR 20030063489 A KR20030063489 A KR 20030063489A KR 20037008906 A KR20037008906 A KR 20037008906A KR 20030063489 A KR20030063489 A KR 20030063489A
- Authority
- KR
- South Korea
- Prior art keywords
- platform
- resistor
- layer
- substrate
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000010521 absorption reaction Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 239000006096 absorbing agent Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 3
- 238000003491 array Methods 0.000 abstract description 7
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 17
- 230000004044 response Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 238000002329 infrared spectrum Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000004297 night vision Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 241001465754 Metazoa Species 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Radiation Pyrometers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/751,338 US6621083B2 (en) | 2000-12-29 | 2000-12-29 | High-absorption wide-band pixel for bolometer arrays |
| US09/751,338 | 2000-12-29 | ||
| PCT/US2001/050465 WO2002055973A2 (en) | 2000-12-29 | 2001-12-20 | High-absorption wide-band pixel for bolometer arrays |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087023827A Division KR20080093165A (ko) | 2000-12-29 | 2001-12-20 | 높은 흡수율을 갖는 볼로미터 어레이용 광대역 픽셀 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20030063489A true KR20030063489A (ko) | 2003-07-28 |
Family
ID=25021543
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087023827A Ceased KR20080093165A (ko) | 2000-12-29 | 2001-12-20 | 높은 흡수율을 갖는 볼로미터 어레이용 광대역 픽셀 |
| KR10-2003-7008906A Ceased KR20030063489A (ko) | 2000-12-29 | 2001-12-20 | 높은 흡수율을 갖는 볼로미터 어레이용 광대역 픽셀 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087023827A Ceased KR20080093165A (ko) | 2000-12-29 | 2001-12-20 | 높은 흡수율을 갖는 볼로미터 어레이용 광대역 픽셀 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6621083B2 (https=) |
| EP (1) | EP1346196A2 (https=) |
| JP (1) | JP2004527731A (https=) |
| KR (2) | KR20080093165A (https=) |
| CN (1) | CN100397056C (https=) |
| IL (2) | IL156693A0 (https=) |
| TW (1) | TW561249B (https=) |
| WO (1) | WO2002055973A2 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100785738B1 (ko) * | 2006-06-19 | 2007-12-18 | 한국과학기술원 | 볼로미터 |
| US8975805B2 (en) | 2011-03-03 | 2015-03-10 | Samsung Electronics Co., Ltd. | Electrical energy generator |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2826725B1 (fr) * | 2001-06-28 | 2004-02-27 | Commissariat Energie Atomique | Microbolometres resistants aux temperatures de scenes elevees. |
| WO2004069547A2 (en) * | 2003-01-31 | 2004-08-19 | Mikron Infrared, Inc. | Apparatus for thermal imaging |
| US7378655B2 (en) * | 2003-04-11 | 2008-05-27 | California Institute Of Technology | Apparatus and method for sensing electromagnetic radiation using a tunable device |
| FR2875298B1 (fr) * | 2004-09-16 | 2007-03-02 | Commissariat Energie Atomique | Detecteur thermique de rayonnement electromagnetique comportant une membrane absorbante fixee en suspension |
| JP4721141B2 (ja) | 2006-03-17 | 2011-07-13 | 日本電気株式会社 | 熱型赤外線固体撮像素子 |
| EP2021749B1 (en) * | 2006-05-25 | 2013-01-23 | Panasonic Corporation | Infrared sensor |
| US9027025B2 (en) | 2007-04-17 | 2015-05-05 | Oracle International Corporation | Real-time database exception monitoring tool using instance eviction data |
| US7825381B2 (en) * | 2007-06-29 | 2010-11-02 | Agiltron, Inc. | Micromechanical device for infrared sensing |
| DE102007031959B4 (de) | 2007-07-10 | 2009-11-26 | Institut Für Photonische Technologien E.V. | Terahertz-Videokamera |
| DE102008017585B4 (de) * | 2008-04-07 | 2010-03-04 | Diehl Bgt Defence Gmbh & Co. Kg | Bildsensorsystem |
| US8123815B2 (en) | 2008-11-24 | 2012-02-28 | Biomet Manufacturing Corp. | Multiple bearing acetabular prosthesis |
| US7842533B2 (en) * | 2009-01-07 | 2010-11-30 | Robert Bosch Gmbh | Electromagnetic radiation sensor and method of manufacture |
| US9128895B2 (en) * | 2009-02-19 | 2015-09-08 | Oracle International Corporation | Intelligent flood control management |
| US8308810B2 (en) | 2009-07-14 | 2012-11-13 | Biomet Manufacturing Corp. | Multiple bearing acetabular prosthesis |
| US9165086B2 (en) | 2010-01-20 | 2015-10-20 | Oracle International Corporation | Hybrid binary XML storage model for efficient XML processing |
| FR2977937B1 (fr) | 2011-07-15 | 2013-08-16 | Centre Nat Rech Scient | Detecteur bolometrique a performances ameliorees |
| EP2581721B1 (en) | 2011-10-10 | 2019-05-08 | Samsung Electronics Co., Ltd | Infrared thermal detector and method of manufacturing the same |
| KR101861147B1 (ko) | 2011-11-08 | 2018-05-28 | 삼성전자주식회사 | 적외선 검출기 |
| US9274005B2 (en) * | 2012-08-23 | 2016-03-01 | Robert Bosch Gmbh | Device and method for increasing infrared absorption in MEMS bolometers |
| US9006661B1 (en) | 2012-10-31 | 2015-04-14 | Exelis, Inc. | Compact THz focal plane imaging array with integrated context imaging sensors and antennae matrix |
| US9297700B2 (en) * | 2012-12-03 | 2016-03-29 | Analog Devices, Inc. | Photonic sensor and a method of manufacturing such a sensor |
| KR101902920B1 (ko) | 2012-12-11 | 2018-10-01 | 삼성전자주식회사 | 광대역 표면 플라즈몬 공진기를 포함하는 적외선 검출기 |
| KR102040149B1 (ko) | 2013-02-01 | 2019-11-04 | 삼성전자주식회사 | 적외선 검출기 |
| US9195048B1 (en) | 2013-03-05 | 2015-11-24 | Exelis, Inc. | Terahertz tunable filter with microfabricated mirrors |
| US9234797B1 (en) | 2013-03-05 | 2016-01-12 | Exelis, Inc. | Compact THz imaging detector with an integrated micro-spectrometer spectral tuning matrix |
| CN103263255B (zh) * | 2013-05-25 | 2014-09-24 | 慈溪迈思特电子科技有限公司 | 人体红外温度传感器的数据处理方法 |
| WO2015187886A1 (en) * | 2014-06-04 | 2015-12-10 | Flir Systems, Inc. | Systems and methods for enhanced bolometer response |
| US10222265B2 (en) * | 2016-08-19 | 2019-03-05 | Obsidian Sensors, Inc. | Thermomechanical device for measuring electromagnetic radiation |
| KR101776027B1 (ko) * | 2017-01-09 | 2017-09-07 | ㈜시리우스 | 마이크로 볼로미터를 포함하는 공유 앵커 구조의 적외선 센서 |
| FR3097047B1 (fr) * | 2019-06-05 | 2021-05-14 | Lynred | Microbolomètre muni d’une fonction de filtrage |
| FR3097046B1 (fr) * | 2019-06-05 | 2021-05-21 | Lynred | Microbolomètre ayant un pas de pixel réduit |
| TWI724708B (zh) | 2019-12-24 | 2021-04-11 | 財團法人工業技術研究院 | 具有阻擋元件的微機電紅外光感測裝置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5286976A (en) * | 1988-11-07 | 1994-02-15 | Honeywell Inc. | Microstructure design for high IR sensitivity |
| DE69221054T2 (de) | 1991-09-27 | 1998-01-22 | Texas Instruments Inc | Lese-System und Verfahren für Infrarotdetektoranordnungen |
| US5288649A (en) | 1991-09-30 | 1994-02-22 | Texas Instruments Incorporated | Method for forming uncooled infrared detector |
| FR2736654B1 (fr) | 1995-07-13 | 1997-08-22 | Commissariat Energie Atomique | Procede de fabrication d'elements de microstructures flottants rigides et dispositif equipe de tels elements |
| US5688699A (en) | 1996-01-16 | 1997-11-18 | Raytheon Company | Microbolometer |
| WO2000012985A1 (en) * | 1998-08-31 | 2000-03-09 | Daewoo Electronics Co., Ltd. | Bolometer including an absorber made of a material having a low deposition-temperature and a low heat-conductivity |
| CN1118103C (zh) * | 1998-10-21 | 2003-08-13 | 李韫言 | 微细加工热辐射红外传感器 |
| JP2002531820A (ja) | 1998-11-27 | 2002-09-24 | デーウー・エレクトロニクス・カンパニー・リミテッド | 酸化亜鉛ボロメーター要素を有するボロメーター |
| US6144285A (en) * | 1999-09-13 | 2000-11-07 | Honeywell International Inc. | Thermal sensor and method of making same |
-
2000
- 2000-12-29 US US09/751,338 patent/US6621083B2/en not_active Expired - Lifetime
-
2001
- 2001-12-20 WO PCT/US2001/050465 patent/WO2002055973A2/en not_active Ceased
- 2001-12-20 JP JP2002556581A patent/JP2004527731A/ja active Pending
- 2001-12-20 EP EP01998112A patent/EP1346196A2/en not_active Withdrawn
- 2001-12-20 KR KR1020087023827A patent/KR20080093165A/ko not_active Ceased
- 2001-12-20 IL IL15669301A patent/IL156693A0/xx active IP Right Grant
- 2001-12-20 CN CNB018229131A patent/CN100397056C/zh not_active Expired - Lifetime
- 2001-12-20 KR KR10-2003-7008906A patent/KR20030063489A/ko not_active Ceased
- 2001-12-28 TW TW090132787A patent/TW561249B/zh not_active IP Right Cessation
-
2003
- 2003-06-29 IL IL156693A patent/IL156693A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100785738B1 (ko) * | 2006-06-19 | 2007-12-18 | 한국과학기술원 | 볼로미터 |
| US8975805B2 (en) | 2011-03-03 | 2015-03-10 | Samsung Electronics Co., Ltd. | Electrical energy generator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1492992A (zh) | 2004-04-28 |
| KR20080093165A (ko) | 2008-10-20 |
| TW561249B (en) | 2003-11-11 |
| CN100397056C (zh) | 2008-06-25 |
| IL156693A0 (en) | 2004-01-04 |
| US20030020017A1 (en) | 2003-01-30 |
| IL156693A (en) | 2007-03-08 |
| JP2004527731A (ja) | 2004-09-09 |
| WO2002055973A3 (en) | 2003-02-06 |
| WO2002055973A2 (en) | 2002-07-18 |
| EP1346196A2 (en) | 2003-09-24 |
| US6621083B2 (en) | 2003-09-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20030630 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20061206 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20080228 Patent event code: PE09021S01D |
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| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20080827 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20080228 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
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| A107 | Divisional application of patent | ||
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| PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20080929 |
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| PJ0201 | Trial against decision of rejection |
Patent event date: 20080929 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20080827 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20090924 Appeal identifier: 2008101009994 Request date: 20080929 |
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| PB0901 | Examination by re-examination before a trial |
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| B601 | Maintenance of original decision after re-examination before a trial | ||
| E801 | Decision on dismissal of amendment | ||
| PB0601 | Maintenance of original decision after re-examination before a trial |
Comment text: Report of Result of Re-examination before a Trial Patent event code: PB06011S01D Patent event date: 20081128 |
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| PE0801 | Dismissal of amendment |
Patent event code: PE08012E01D Comment text: Decision on Dismissal of Amendment Patent event date: 20081128 Patent event code: PE08011R01I Comment text: Amendment to Specification, etc. Patent event date: 20080929 Patent event code: PE08011R01I Comment text: Amendment to Specification, etc. Patent event date: 20080428 |
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| J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20080929 Effective date: 20090924 |
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Patent event code: PJ13011S01D Patent event date: 20090924 Comment text: Trial Decision on Objection to Decision on Refusal Appeal kind category: Appeal against decision to decline refusal Request date: 20080929 Decision date: 20090924 Appeal identifier: 2008101009994 |