KR20030061515A - Dry etching apparatus of semiconductor device and method for dry etching therby - Google Patents

Abstract

PURPOSE: A dry etching apparatus of semiconductor device is provided to prevent a buffer chamber, the first loadlock chamber, the second loadlock chamber and a contact chamber from being contaminated in a wafer transfer process after a dry etching is performed on a wafer by cleaning the etch gas of Cl2 and HBr absorbed to the surface of the wafer while using the deionized water of a plasma state. CONSTITUTION: The buffer chamber(56) is prepared. The dry etching for a polysilicon layer on the wafer is performed by using the etch gas of a plasma state in a process chamber, connected to a predetermined portion of the buffer chamber. A cleaning process in which the vaporized deionized water is transformed into a plasma state and the surface of the wafer is cleaned is performed in a cleaning chamber(66) connected to another portion of the buffer chamber. The wafer is loaded/unloaded into/from a loadlock chamber connected to another portion of the buffer chamber.

Description

Dry etching apparatus of semiconductor device and method for dry etching therby}

The present invention relates to a semiconductor dry etching apparatus and a dry etching method using the same, and more particularly, after a dry etching, a semiconductor dry etching apparatus and a dry method using the same that can easily remove the etching gas in the plasma state adsorbed on the wafer surface. It relates to an etching method.

In general, a semiconductor device generates a process defect even by fine particles, so that a semiconductor manufacturing apparatus is installed in a clean room.

In addition, the process chamber of the semiconductor manufacturing apparatus eliminates process influence by particles by maintaining a high vacuum state by the operation of a high vacuum pump, and the process chambers improve productivity by providing a plurality of adjacent process chambers.

In addition, in order to prevent the high vacuum state of the process chamber from rapidly deteriorating when the plurality of process chambers maintain the high vacuum state, the buffer chamber of the low vacuum state is provided adjacent to the process chamber. .

In the conventional semiconductor dry etching apparatus having the buffer chamber as described above, as shown in FIG. 1, a polysilicon dry etching wafer and a cassette in which a polysilicon film dry etching is completed are located. A loading and unloading portion 10 and a second loading and unloading portion 12 are provided.

In addition, the first loading and unloading unit 10, the second loading and unloading unit 12, and the contact chamber 14 are disposed adjacent to each other, and the contact chamber 14 and the first load lock chamber 18 are disposed. And the second load lock chamber 20 are connected.

Here, the first transfer arm 16 for wafer transfer is provided in the contact chamber 14.

In addition, a buffer chamber 22 is installed adjacent to the first load lock chamber 18 and the second load lock chamber 20, and the buffer chamber 22 and Cl ₂ and HBr gas are converted into a plasma state. The first process chamber 26, the second process chamber 28, and the third process chamber 30 through which the dry etching process is performed are provided adjacent to each other.

Here, the second transistor arm 24 for wafer transfer is provided in the buffer chamber 22.

Therefore, when a cassette containing 25 wafers having a polysilicon film formed thereon is mounted on the first loading and unloading unit 10 and the second loading and unloading unit 12, a series of semiconductor manufacturing processes are performed. The first transfer arm 16 inside the contact chamber 14 carries a wafer located in a cassette located in the first loading and unloading portion 10 and the second loading and unloading portion 12. ) Or the second load lock chamber 20.

Next, the second transfer arm 24 installed in the buffer chamber 22 may transfer the wafer inside the first load lock chamber 18 or the second load lock chamber 20 to the first process chamber 26 and the first transfer chamber 24. 2 is transferred into one of the process chambers 26, 28, and 30 of the process chamber 28 and the third process chamber 30.

At this time, in the process chambers 26, 28, and 30, Cl ₂ and HBr gases are converted into a plasma state using an electric or magnetic field to induce a reaction between the cations in the plasma state and the polysilicon film on the wafer surface. A dry etching process of etching a silicon film is performed.

Subsequently, a wafer subjected to a dry etching process using plasma in the process chambers 26, 28, and 30 is first loaded lock chamber 18 by a second transistor arm 24 inside the buffer chamber 22. ) Or the second load lock chamber 20.

Next, the wafer inside the first load lock chamber 18 or the second load lock chamber 20 is first loaded and unloaded by the first transfer arm 16 inside the contact chamber 14. ) Or the cassette of the second loading and unloading part 12.

Thereafter, the wafer on which the dry etching process loaded in the cassette is completed is moved to a subsequent process facility.

However, in the conventional semiconductor dry etching apparatus, Cl ₂ and HBr gas in a plasma state are adsorbed onto the wafer surface in the process of etching the polysilicon film inside the process chamber, so that the buffer chamber, the first load lock chamber or the second load lock chamber, And Cl ₂ and HBr gases in the plasma state adsorbed on the wafer surface by moving to the contact chamber contaminate the buffer chamber, the first load lock chamber or the second load lock chamber, and the contact chamber.

Then, the wafer after the polysilicon film dry etching process is completed is exposed to the atmosphere in order to move to a subsequent process facility, thereby reacting with the plasma Cl ₂ and HBr gas adsorbed on the wafer surface and reacting with moisture in the atmosphere. By forming by-products, there was a problem of acting as a factor of defects in semiconductor devices.

An object of the present invention, after completion of the dry etching process, the etching gas, such as Cl ₂ and HBr gas adsorbed on the wafer surface is in contact with the buffer chamber, the first load lock chamber or the second load lock chamber during the wafer movement process The present invention provides a semiconductor dry etching apparatus capable of preventing contamination of a chamber and a dry etching method using the same.

Another object of the present invention is that after completion of the dry etching process, Cl ₂ and HBr gas adsorbed on the surface of the wafer reacts with moisture in the air to form a reaction by-product in the process of waiting to move to the subsequent process equipment. The present invention provides a semiconductor dry etching apparatus and a dry etching method using the same.

1 is a schematic configuration diagram of a conventional semiconductor dry etching apparatus.

2 is a block diagram illustrating a semiconductor dry etching apparatus and a dry etching method using the same according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10, 40: first loading and unloading unit

12, 42: second loading and unloading unit

14, 44: contact chamber 16, 46: first transfer arm

18, 52: first load lock chamber 20, 54: second load lock chamber

22, 56: buffer chamber 24, 58: second transfer arm

26, 60: 1st process chamber 28, 62: 2nd process chamber

30, 64: 3rd process chamber 48: 1st atmospheric chamber

50: second atmospheric chamber 66: cleaning chamber

The semiconductor dry etching apparatus according to the present invention for achieving the above object, the buffer chamber; A process chamber provided with a predetermined portion of the buffer chamber and performing a dry etching process of dry etching the polysilicon film on the wafer using an etching gas in a plasma state; A cleaning chamber which is connected to another predetermined portion of the buffer chamber and which undergoes a cleaning process of converting vaporized deionized water into a plasma state to clean the surface of the wafer; And a load lock chamber which is connected to the buffer chamber and another predetermined portion and to which the wafer is inserted and discharged.

The contact chamber may further include a contact chamber in which the wafer is loaded and unloaded adjacent to the load lock chamber, and a standby chamber may be further provided adjacent to the contact chamber to wait for the wafer on which the etching process is completed.

In addition, the dry etching method according to the present invention comprises the steps of: injecting a wafer formed on top of the polysilicon film of the loading and unloading portion into the process chamber; Etching the polysilicon layer on the wafer by converting the etching gas supplied into the process chamber into a plasma state; Cleaning the wafer etched with the polysilicon film using vaporized deionized water in a plasma state; And moving the cleaned wafers to the loading and unloading unit.

Here, the cleaning of the wafer on which the polysilicon film is etched may be performed in-situ after etching the polysilicon film, and vaporized deionized water in the plasma state of the wafer on which the polysilicon film is etched. Cleaning may be performed in the process chamber or in a cleaning chamber other than the process chamber.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a block diagram illustrating a semiconductor dry etching apparatus and a dry etching method using the same according to an embodiment of the present invention.

In the semiconductor dry etching apparatus according to the present invention, as shown in FIG. 2, a first loading and unloading unit in which a cassette for accommodating a wafer for polysilicon dry etching and a wafer for which polysilicon dry etching is completed is located is located. 40 and a second loading and unloading portion 42.

In addition, the first loading and unloading unit 40, the second loading and unloading unit 42, and the contact chamber 44 are installed adjacent to each other, and the dry etching process is completed on both sides of the contact chamber 44. The first waiting chamber 48 and the second waiting chamber 50 for waiting for are provided.

Here, a wafer transfer first transfer arm 46 is provided in the contact chamber 44, and a wafer atmospheric cassette (not shown) is provided in the first and second atmospheric chambers 48 and 50. Each of which is installed.

In addition, the contact chamber 44, the first load lock chamber 52 and the second load lock chamber 54 is provided, the first load lock chamber 52 and the second load lock chamber 54 and Adjacent to the buffer chamber 56 is provided.

Here, a second transfer arm 58 for wafer transfer is provided inside the buffer chamber 56.

In addition, the first process chamber 60, the second process chamber 62, and the third process chamber 64 in which the dry etching process is performed by converting the Cl ₂ and HBr gases into the plasma state adjacent to the buffer chamber 56 are performed. ) Is disposed adjacent to each other, and the cleaning process is performed by converting the deionized water into the plasma state for the wafer on which the dry etching process using plasma is completed in each of the process chambers 60, 62, and 64. This advanced cleaning chamber 66 is provided.

Here, the dry etching process of the polysilicon film using plasma is performed in the first process chamber 60, the second process chamber 62, and the third process chamber 64 without providing the cleaning chamber 66. Thereafter, the cleaning process may be performed by supplying vaporized deionized water into the first process chamber 60, the second process chamber 62, and the third process chamber 64 to switch to a plasma state.

Therefore, when a cassette containing 25 wafers having a polysilicon film formed thereon by a series of semiconductor manufacturing processes is seated on the first loading and unloading portion 40 and the second loading and unloading portion 42, the contact is made. The first transfer arm 46 inside the chamber 44 receives a wafer located in a cassette located at the first loading and unloading portion 40 and the second loading and unloading portion 42. Or transfer to the second load lock chamber 54.

Next, the second transfer arm 58 installed in the buffer chamber 56 may transfer the wafer inside the first load lock chamber 52 or the second load lock chamber 54 to the first process chamber 60 and the first process chamber 60. 2 is transferred into one of the process chambers 60, 62, and 64 of the process chamber 62 and the third process chamber 64.

At this time, inside the process chamber 60, 62, 64, Cl ₂ and HBr gas is converted into a plasma state using an electric or magnetic field to induce a reaction between the cations in the plasma state and the polysilicon film on the wafer surface. A dry etching process of etching a silicon film is performed.

At this time, after performing the dry etching process of the polysilicon film using plasma in the process chamber (60, 62, 64), vaporized into the process chamber (60, 62, 64) in-situ By supplying deionized water to a plasma state, a cleaning process of removing Cl ₂ and HBr gas in the plasma state adsorbed onto the wafer surface using vaporized deionized water in the plasma state may be performed.

Subsequently, a wafer subjected to a dry etching process using plasma in the process chambers 60, 62, and 64 is transferred to the cleaning chamber 66 by the second transfer arm 58 inside the buffer chamber 56 to be cleaned. The process proceeds.

At this time, in the cleaning process, the deionized water vaporized into the cleaning chamber 66 is supplied to the plasma state, whereby the deionized water in the plasma state and the surface of the wafer react with the plasma state of Cl ₂ and HBr gas. It is a process of removing.

Subsequently, the wafer in which the cleaning process is completed in the cleaning chamber 66 is transferred to the first load lock chamber 52 or the second load lock chamber 54 by the second transfer arm 58 of the buffer chamber 56. do.

Next, the wafer inside the first load lock chamber 52 or the second load lock chamber 54 is formed by the first transfer arm 46 inside the contact chamber 44. 2 After being transferred to the atmospheric chamber 50, it is loaded into a cassette and waits.

In this case, the wafer may be waited in the first atmospheric chamber 48 or the second atmospheric chamber 50 to prevent the wafer from reacting with moisture in the atmosphere to form reaction byproducts during the wafer atmospheric process.

Subsequently, when the wafer in which the dry etching process using the subsequent plasma is completed is completely loaded in the cassette of the first atmospheric chamber 48 or the second atmospheric chamber 50, the first atmospheric chamber 48 or the second atmospheric chamber ( The wafer loaded in the cassette of 50 is loaded into the cassette of the first loading and unloading portion 40 or the second loading and unloading portion 42 by the first transfer arm 46 inside the contact chamber 44. do.

Thereafter, the wafer on which the dry etching process loaded in the cassette is completed is moved to a subsequent process facility.

According to the present invention, after completion of the dry etching process, the etching gas such as Cl ₂ and HBr gas adsorbed on the wafer surface is cleaned by using deionized water in a plasma state, so that the dry etching of the wafer is completed in the buffer chamber, The first load lock chamber or the second load lock chamber and the contact chamber can be prevented from being contaminated.

In addition, by waiting the wafer after the dry etching process in the air chamber, the wafer reacts with moisture in the air to form reaction by-products during the process of waiting for the wafer, thereby preventing it from acting as a defect factor of the semiconductor device. have.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and such modifications and modifications belong to the appended claims.

Claims (6)

Buffer chamber; A process chamber provided with a predetermined portion of the buffer chamber and performing a dry etching process of dry etching the polysilicon film on the wafer using an etching gas in a plasma state; A cleaning chamber which is connected to another predetermined portion of the buffer chamber and which undergoes a cleaning process of converting vaporized deionized water into a plasma state to clean the surface of the wafer; And A load lock chamber which is connected to the buffer chamber and another predetermined part and into which the wafer is inserted and discharged; Semiconductor dry etching apparatus comprising a. The wafer of claim 1, further comprising a contact chamber adjacent to the load lock chamber for loading and unloading the wafer, and a standby chamber adjacent to the contact chamber for waiting for the wafer on which the etching process is completed. A semiconductor dry etching device characterized in that. Injecting a wafer having a polysilicon film formed thereon into the process chamber; Etching the polysilicon layer on the wafer by converting the etching gas supplied into the process chamber into a plasma state; Cleaning the wafer etched with the polysilicon film using vaporized deionized water in a plasma state; And Moving the cleaned wafer to the loading and unloading unit; Dry etching method comprising a. The dry etching method of claim 3, wherein the cleaning of the wafer on which the polysilicon film is etched is performed in-situ after etching the polysilicon film. The dry etching method of claim 3, wherein the cleaning of the wafer on which the polysilicon film is etched using vaporized deionized water in a plasma state is performed in the process chamber. The dry etching method as claimed in claim 3, wherein the cleaning of the wafer on which the polysilicon film is etched using vaporized deionized water in a plasma state is performed in a cleaning chamber other than the process chamber.