KR20030050574A - Deposition Device - Google Patents
Deposition Device Download PDFInfo
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- KR20030050574A KR20030050574A KR1020010081045A KR20010081045A KR20030050574A KR 20030050574 A KR20030050574 A KR 20030050574A KR 1020010081045 A KR1020010081045 A KR 1020010081045A KR 20010081045 A KR20010081045 A KR 20010081045A KR 20030050574 A KR20030050574 A KR 20030050574A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Abstract
Description
본 발명은 액정표시소자의 제조장치에 관한 것으로, 특히 에어신호속도와 가스공급속도 차이를 줄일 수 있는 화학기상증착장치에 관한 것이다.The present invention relates to an apparatus for manufacturing a liquid crystal display device, and more particularly to a chemical vapor deposition apparatus that can reduce the difference between the air signal speed and the gas supply speed.
액정표시장치는 소형 및 박형화와 저전력 소모의 장점을 가지며, 노트북 PC, 사무 자동화 기기, 오디오/비디오 기기 등으로 이용되고 있다. 특히, 스위치(Switch) 소자로서 박막 트렌지스터(Thin Film Transistor : 이하 "TFT"라 함)가 이용되는 액티브 매트릭스(Active Matrix) 타입의 액정표시장치는 동적인 이미지를 표시하기에 적합하다.LCDs have advantages of small size, thinness, and low power consumption, and are used as notebook PCs, office automation devices, and audio / video devices. In particular, an active matrix type liquid crystal display device using a thin film transistor (hereinafter referred to as "TFT") as a switch element is suitable for displaying a dynamic image.
액정표시장치는 화소들이 게이트라인(Gate Line)들과 데이터라인(Data Line)들의 교차부들 각각에 배열되어진 화소매트릭스(Picture Element Matrix 또는 Pixel Matrix)에 텔레비전 신호와 같은 비디오신호에 해당하는 화상을 표시하게 된다. 화소들 각각은 데이터라인으로부터의 데이터신호의 전압레벨에 따라 투과 광량을 조절하는 액정셀을 포함한다. TFT는 게이트라인과 데이터라인들의 교차부에 설치되어 게이트라인으로부터의 스캔(Scan)신호에 응답하여 액정셀(Cell)쪽으로 전송될 데이터신호를 절환하게 된다.The liquid crystal display displays an image corresponding to a video signal such as a television signal on a pixel element (Picture Element Matrix or Pixel Matrix) in which pixels are arranged at intersections of gate lines and data lines, respectively. Done. Each of the pixels includes a liquid crystal cell that adjusts the amount of transmitted light according to the voltage level of the data signal from the data line. The TFT is installed at the intersection of the gate line and the data lines to switch the data signal to be transmitted to the liquid crystal cell in response to the scan signal from the gate line.
도 1을 참조하면, 하부기판(1) 상에는 TFT가 형성된다. TFT는 하부기판(1) 상에 형성되는 게이트(Gate)전극(4)과, 게이트절연막(2) 및 반도체층(7,8)을 사이에 두고 소스(Source) 및 드레인(Drain)전극(5,6)으로 이루어진다. 이러한 TFT를 보호하기 위해 보호층(3)이 형성되며, TFT의 드레인전극(6)은 보호층(3)을 관통하는 접촉홀(Contact Hole, 10)을 통해 화소전극(9)과 접속된다.Referring to FIG. 1, a TFT is formed on the lower substrate 1. The TFT includes a gate electrode 4 formed on the lower substrate 1, a source electrode and a drain electrode 5 with the gate insulating film 2 and the semiconductor layers 7 and 8 interposed therebetween. , 6). A protective layer 3 is formed to protect the TFT, and the drain electrode 6 of the TFT is connected to the pixel electrode 9 through a contact hole 10 penetrating through the protective layer 3.
이러한 게이트절연막(2), 반도체층(7,8) 및 보호막(3)은 플라즈마 인핸스드 화학적 기상 증착(Plasma Enhanced Chemical Vapor Deposition : 이하 "PECVD"라 함) 장치를 이용하여 증착되고 있다. PECVD는 진공실을 이루는 챔버 내부에 증착에 필요한 가스를 주입하여 원하는 압력과 기판 온도가 설정되면 고주파(Radio Frequency : 이하 "RF"라 함)를 이용하여 주입된 가스를 플라즈마 상태로 분해하여 기판 위에 증착하게된다.The gate insulating film 2, the semiconductor layers 7, 8, and the protective film 3 are deposited using a plasma enhanced chemical vapor deposition (hereinafter referred to as "PECVD") device. PECVD injects the gas required for deposition into the chamber constituting the vacuum chamber, and when the desired pressure and substrate temperature are set, it decomposes the injected gas into a plasma state using a radio frequency (hereinafter referred to as "RF") and deposits it on the substrate. Will be done.
PECVD장치는 도 2에 도시된 바와 같이 가스패널(Gas Panel, 12)과 제2 가스세정기(Scrubber, 20b) 사이에 플라즈마생성부(14), 프로세스챔버부(Process Chamber, 16), 펌프(Pump)부(18) 및 제1 가스세정기(20a)를 구비한다.As shown in FIG. 2, the PECVD apparatus includes a plasma generation unit 14, a process chamber 16, and a pump between a gas panel 12 and a second gas cleaner 20b. Unit 18 and first gas cleaner 20a.
가스패널(12)은 가스 룸(Gas Room)에서 증착물 증착시 필요로 하는 가스 및 세정가스들이 주입되는 곳이다. 주입되는 가스로는 NF3, Ar 등이다.The gas panel 12 is where gas and cleaning gases required for depositing a deposit are injected into a gas room. Gases to be injected are NF 3, Ar, and the like.
플라즈마생성부(14)는 가스패널(12)에서 주입된 가스를 분해하기 위한 플라즈마를 생성하는 곳이다.The plasma generation unit 14 is a place for generating a plasma for decomposing the gas injected from the gas panel 12.
프로세스챔버부(16)는 도 3에 도시된 바와 같이 증착물질을 증착시키는 제1 내지 제4 증착챔버들(28a 내지 28d)을 구비한다. 각 증착챔버들(28a 내지 28d) 사이에는 반송챔버(도시하지 않음)가 설치되며, 반송챔버(도시하지 않음)의 상/하측에는 기판(1)이 소정 매씩 탑재되는 제1 및 제2 로드락챔버(Load Lock)들(26a,26b)과 기판(1)을 예열시키기 위한 히팅(Heating)챔버(30)가 설치된다. 제1 및 제2 로드락챔버들(26a,26b)과 카세트로더(Cassette Loader, 22) 사이에는 로봇(Robot, 24)이 설치된다.The process chamber portion 16 includes first to fourth deposition chambers 28a to 28d for depositing a deposition material as shown in FIG. 3. Transfer chambers (not shown) are provided between each of the deposition chambers 28a to 28d, and first and second load locks on which substrates 1 are mounted on the upper and lower sides of the transfer chambers (not shown). A heating chamber 30 for preheating the chambers (Load Locks) 26a and 26b and the substrate 1 is provided. A robot 24 is installed between the first and second load lock chambers 26a and 26b and the cassette loader 22.
펌프부(18)는 제1 내지 제4 증착챔버(28a 내지 28d)의 증착시 제1 내지 제4 증착챔버(28a 내지 28d)의 내부가스를 배기시킴으로써 제1 내지 제4 증착챔버(28a 내지 28d)의 내부를 소정 진공압으로 진공상태를 유지하게 된다.The pump unit 18 exhausts the internal gas of the first to fourth deposition chambers 28a to 28d when the first to fourth deposition chambers 28a to 28d are deposited. ) To maintain a vacuum state at a predetermined vacuum pressure.
제1 가스세정기(20a)는 증착시 펌프부(18)에 의해 배출되는 잔류가스를 정제하게된다.The first gas cleaner 20a purifies the residual gas discharged by the pump 18 during deposition.
제2 가스세정기(20b)는 옥외에 설치되어 제1 가스세정기(20a)에 의해 정제된 잔류가스를 대기로 방출하게 된다.The second gas cleaner 20b is installed outdoors to discharge residual gas purified by the first gas cleaner 20a to the atmosphere.
이러한 PECVD장치의 클리닝(Cleaning) 가스흐름을 도 4를 참조하여 살펴보면, 가스패널(12)내에 위치하는 가스 매스(Mass) 흐름제어기(도시하지 않음)의 신호가 가스공급기(도시하지 않음)에 전달되면, NF3와 Ar은 플라즈마 생성부(14)에 주입된다.(S1단계) 주입된 가스 중 NF3는 플라즈마 생성부(14)에서 생성된 고주파 플라즈마를 이용하여 N+F로 분리된다.(S2단계) 분리된 F가스와 프로세스챔버(16) 내부에 증착하고 남은 증착부산물(Powder)이 반응하여 클리닝이 실행된다.(S3단계) 분리된 N가스는 제1 가스세정기(20a)로 공급되는 O2와 반응하여 제1가스세정기(20a)내에 유해성분인 NOx가 생성된다.(S4단계) 이 NOx는 제2 가스세정기(20b)를 통해 대기로 방출하게 된다.(S5단계)Looking at the cleaning gas flow of the PECVD apparatus with reference to FIG. 4, a signal of a gas mass flow controller (not shown) located in the gas panel 12 is transmitted to the gas supplier (not shown). In this case, NF 3 and Ar are injected into the plasma generation unit 14. (Step S1) NF 3 of the injected gas is separated into N + F using the high frequency plasma generated by the plasma generation unit 14. Step S2) The separated F gas is deposited inside the process chamber 16 and the remaining deposition byproducts (Powder) react to perform cleaning. (Step S3) The separated N gas is supplied to the first gas cleaner 20a. Reaction with O 2 generates NOx, which is a harmful component, in the first gas cleaner 20a. (Step S4) The NOx is released to the atmosphere through the second gas cleaner 20b.
제1 가스세정기(20a)로 공급되는 에어(O2)의 흐름을 도 5를 참조하여 설명하면, 시스템(System) PLC(Programmable Logic Controller, 36)에서 에어(Air)차단신호(C)가 입력되면 에어차단기(33)가 동작하게 된다. 에어차단기(33)로는 솔레노이드 밸브(Solenoide Valve)등이 이용된다. 여기서, 시스템 PLC(36)에서 에어차단신호(C)는 증착공정이 진행될 경우 항상 온(on)신호를 출력하여 증착공정 중에는 제1 가스세정기(20a)에 에어가 공급된다. 에어차단기(33)가 동작하게 되면, 에어공급기(Air Utility, 32)를 통해 유입되던 에어공급이 차단되어 레귤레이터(Regulator, 34)는 압력 및 온도 등을 감지하게 된다. 원하는 압력 및 온도일 때에 압력스위치(Pressure Switch, 35)는 온이 되어 프로세스챔버(16)는 일정한 압력을 유지하게 된다.The flow of air O 2 supplied to the first gas cleaner 20a will be described with reference to FIG. 5, and the air shutoff signal C is input from the system PLC (Programmable Logic Controller) 36. When the air circuit breaker 33 is operated. As the air circuit breaker 33, a solenoid valve or the like is used. Here, in the system PLC 36, the air cutoff signal C always outputs an on signal when the deposition process is performed, and air is supplied to the first gas cleaner 20a during the deposition process. When the air circuit breaker 33 operates, the air supply flowing through the air supply 32 is cut off so that the regulator 34 senses pressure and temperature. At the desired pressure and temperature, the pressure switch 35 is turned on so that the process chamber 16 maintains a constant pressure.
이러한 PECVD장치는 제1 가스세정기(20a)에 에어공급이 중단되면, 가스패널(12) 및 프로세스챔버(16) 등을 거쳐 제1 가스세정기(20a)에 N가스가 공급된다. N가스가 공급된 제1 가스세정기(20a)는 N가스와 에어가 반응하여 유해 성분인 NOx를 발생하게 되며, 이 NOx는 제2 가스세정기(20b)를 통해 외부로 방출된다. 그런 다음, 제1 세정기(20a)에 에어가 공급됨과 동시에 프로세스챔버(16)에 증착가스가 공급되고 클리닝가스공급은 중단된다.In the PECVD apparatus, when the air supply to the first gas cleaner 20a is stopped, the N gas is supplied to the first gas cleaner 20a through the gas panel 12 and the process chamber 16. The first gas cleaner 20a supplied with the N gas reacts with the N gas and air to generate NOx, which is a harmful component, and the NOx is discharged to the outside through the second gas cleaner 20b. Then, while the air is supplied to the first scrubber 20a, the deposition gas is supplied to the process chamber 16 and the cleaning gas supply is stopped.
이러한 에어차단신호는 시스템 PLC(36)에서 0.1초 이내로 에어차단기(33)에전달된다. 그러나, 가스공급기(도시하지 않음)에서 제1 가스세정기(20a)까지 가스의 흐름은 약 10초/20m이다. 이에 따라, 에어차단과 가스공급의 불일치로 도 6에 도시된 바와 같이 A,C 영역에서 비정상적인 조건으로 반응이 진행된다. 이를 상세히 설명하면, 제1 영역(H1)에서 에어차단신호가 입력되면, 에어공급이 중단되고 NF3가스가 주입되어야 한다. 그러나, 약 10초간의 제1 영역(H1)과 제2 영역(H2)에서 에어의 공급은 중단되지만 N성분이 제1 가스세정기(20a)에 공급되지 않게 된다. 또한, 제3 영역(H3)에서 에어공급이 시작되면, NF3가 가스패널(12)에 공급이 중단되어야 한다. 그러나, 약 10초간의 제3 영역(H3)과 제4 영역(H4)에서 N성분의 가스가 공급되는 상태에서 에어를 공급하게 되어 비정상적인 반응을 하는 문제점이 있다.This air cutoff signal is transmitted from the system PLC 36 to the air breaker 33 within 0.1 second. However, the flow of gas from the gas supplier (not shown) to the first gas cleaner 20a is about 10 seconds / 20m. Accordingly, the reaction proceeds under abnormal conditions in the A and C regions as shown in FIG. 6 due to a mismatch between the air cutoff and the gas supply. In detail, when the air blocking signal is input in the first region H1, the air supply is stopped and the NF 3 gas must be injected. However, the supply of air is stopped in the first region H1 and the second region H2 for about 10 seconds, but the N component is not supplied to the first gas cleaner 20a. In addition, when the air supply is started in the third region H3, the supply of the NF 3 to the gas panel 12 should be stopped. However, there is a problem in that the air is supplied in the state where the N component gas is supplied in the third region H3 and the fourth region H4 for about 10 seconds, thereby causing an abnormal reaction.
또한, 챔버별 배관 라인구성길이 차이 및 프로세스 진행 공정차이에 의해 A,B구간의 시간은 프로세스 챔버별로 차이가 발생하는 문제점이 있다.In addition, there is a problem in that the time intervals A and B vary by process chamber due to the difference in the length of the piping line configuration per chamber and the process difference.
따라서, 본 발명의 목적은 에어신호속도와 가스공급속도의 차이를 줄일 수 있는 증착장치를 제공하는데 있다.Accordingly, an object of the present invention is to provide a deposition apparatus that can reduce the difference between the air signal speed and the gas supply speed.
도 1은 통상적인 박막 트랙지스터를 나타내는 단면도.1 is a cross-sectional view showing a conventional thin film track resistor.
도 2는 종래의 증착장치를 개략적으로 나타내는 도면.2 is a view schematically showing a conventional deposition apparatus.
도 3은 도 2에 도시된 프로세스챔버를 상세히 나타내는 도면.3 is a view showing in detail the process chamber shown in FIG.
도 4는 도 2에 도시된 증착장치별로 세정가스의 반응상태를 나타내는 도면.4 is a view showing the reaction state of the cleaning gas for each deposition apparatus shown in FIG.
도 5는 종래 에어의 흐름을 나타내는 도면.5 is a view showing a flow of conventional air.
도 6은 에어공급시간과 클리닝가스의 흐름을 나타내는 도면.6 is a view showing the air supply time and the flow of the cleaning gas.
도 7은 본 발명에 따른 증착장치의 지연기를 나타내는 도면.7 is a view showing a retarder of a deposition apparatus according to the present invention.
도 8은 도 7에 도시된 지연기의 동작과정을 나타내는 도면.8 is a view illustrating an operation process of the delay unit illustrated in FIG. 7.
도 9는 도 8에 도시된 에어공급시간과 클리닝가스의 흐름을 나타내는 도면.9 is a view showing the air supply time and the flow of the cleaning gas shown in FIG.
< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>
12 : 가스패널14 : 플라즈마 생성부12 gas panel 14 plasma generating unit
16 : 프로세스 챔버부18 : 펌프부16 process chamber portion 18 pump portion
20 : 가스세정기32,62 : 에어공급기20: gas cleaner 32, 62: air supply
33,63 : 에어차단기34,64 : 레귤레이터33,63: Air circuit breaker 34,64: Regulator
35,65 : 압력스위치36,67 : PLC35,65: Pressure switch 36,67: PLC
66 : 가스공급기68 : 지연기66 gas supply 68 delay
상기 목적을 달성하기 위하여, 본 발명에 따른 증착장치는 가스공급개시신호에 응답하여 가스를 가스세정기에 공급하는 가스공급기와, 가스공급개시신호에 응답하여 에어차단신호를 생성하는 제어기와, 에어차단신호에 응답하여 가스세정기에 공급되는 에어를 차단하는 에어차단기와, 가스공급개시신호와 에어차단신호를 동기화시켜 각각 가스공급기와 에어차단기에 공급하는 신호중계기를 구비한다.In order to achieve the above object, the deposition apparatus according to the present invention comprises a gas supply for supplying gas to the gas cleaner in response to the gas supply start signal, a controller for generating an air cutoff signal in response to the gas supply start signal, And an air interrupter for shutting off the air supplied to the gas cleaner in response to the signal, and a signal repeater for synchronizing the gas supply start signal and the air interruption signal to supply the gas supply unit and the air interrupter, respectively.
상기 신호중계기는 지연기를 포함하는 것을 특징으로 한다.The signal repeater may include a delay.
상기 신호중계기는 상기 에어차단신호를 소정시간 지연하는 것을 특징으로 한다.The signal repeater may delay the air cutoff signal for a predetermined time.
상기 신호중계기의 지연시간은 작업자에 의해 결정되는 것을 특징으로 한다.The delay time of the signal repeater is characterized by the operator.
상기 신호중계기는 상기 가스세정기 전면부 패널에 위치하는 것을 특징으로 한다.The signal repeater is located on the gas cleaner front panel.
상기 가스는 클리닝가스인 것을 특징으로 한다.The gas is characterized in that the cleaning gas.
상기 클리닝가스는 NF3인 것을 특징으로 한다.The cleaning gas is characterized in that the NF 3 .
상기 에어는 O2를 포함하는 것을 특징으로 한다.The air is characterized in that it comprises O 2 .
상기 목적 외에 본 발명의 다른 목적 및 특징들은 첨부한 도면들을 참조한 실시예에 대한 설명을 통하여 명백하게 드러나게 될 것이다.Other objects and features of the present invention in addition to the above object will become apparent from the description of the embodiments with reference to the accompanying drawings.
이하, 도 7 내지 도 9를 참조하여 본 발명의 바람직한 실시예에 대하여 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described with reference to FIGS. 7 to 9.
도 7은 본 발명에 따른 PECVD장치를 나타내는 도면이다.7 shows a PECVD apparatus according to the present invention.
도7을 참조하면, 본 발명에 따른 PECVD장치(50)는 PECVD장치(52)의 전면부패널(Panel) 쪽에 지연기(52)를 설치하게 된다. 바람직하게는 PECVD장치(50) 중 가스세정기의 전면부 패널에 위치하게 된다.Referring to FIG. 7, the PECVD apparatus 50 according to the present invention is provided with a retarder 52 on the front panel side of the PECVD apparatus 52. Preferably, the PECVD apparatus 50 is located on the front panel of the gas cleaner.
이 지연기(52)는 종래의 에어차단신호속도와 가스공급속도 차이를 측정하여 그만큼의 지연시간을 세팅(Setting)한다. 즉, 에어차단신호속도에 비해 느린 가스공급을 먼저 한 후 세팅된 소정의 지연시간 후 에어차단신호를 출력하여 가스가 가스세정기(도시하지 않음)에 도달함과 동시에 에어공급을 중단하도록 한다. 이에 따라, 프로세스 챔버별, 공정진행별 변경되는 시간을 조절할 수 있다.The retarder 52 measures the difference between the conventional air cutoff signal speed and the gas supply speed, and sets the corresponding delay time. That is, after the gas supply is slower than the air blocking signal speed, the air blocking signal is output after a predetermined delay time, so that the gas reaches the gas cleaner (not shown) and the air supply is stopped. Accordingly, the changing time for each process chamber and process may be adjusted.
도 8을 참조하면, PECVD장치(50)의 가스공급기(66)의 클리닝가스공급신호(C1)가 시스템 PLC(67)에 입력된다. 가스공급기(66)는 클리닝가스공급신호(C1)에 의해 세정시 필요로 하는 가스 등이 가스패널 및 프로세스 챔버에 주입된다. 세정시 필요로 하는 가스로는 NF3등이 사용된다. 시스템 PLC(67)는 증착가스공급신호가 입력되면 에어공급신호를 출력하게 되며, 클리닝가스공급신호(C1)가 입력되면, 에어차단신호(C2)를 출력하게 된다. 이에 따라, 시스템 PLC(67)에 입력된 클리닝가스공급신호(C1)에 의해 시스템 PLC(67)는 에어차단신호(C2)를 지연기(68)로 출력한다. 지연기(68)는 세팅된 소정의 지연시간 후 시스템 PLC(67)로부터 입력된 에어차단신호(C2)를 에어차단기(63)에 공급한다. 에어차단기(63)에 공급된 에어차단신호(C2)에 의해 에어공급기(62)를 통해 유입되던 에어공급이 차단된다. 에어가 차단됨으로써 레귤레이터(64)는 PECVD장치(50)의 압력 및 온도 등을 감지하게 된다. 원하는 압력 및 온도일 때에압력스위치(65)는 온이 되어 프로세스챔버는 일정한 압력을 유지하게 된다.Referring to FIG. 8, the cleaning gas supply signal C1 of the gas supplier 66 of the PECVD apparatus 50 is input to the system PLC 67. In the gas supplier 66, a gas or the like necessary for cleaning is injected into the gas panel and the process chamber by the cleaning gas supply signal C1. NF 3 or the like is used as the gas required for washing. The system PLC 67 outputs an air supply signal when the deposition gas supply signal is input, and outputs an air shutoff signal C2 when the cleaning gas supply signal C1 is input. Accordingly, the system PLC 67 outputs the air cutoff signal C2 to the delay unit 68 by the cleaning gas supply signal C1 input to the system PLC 67. The retarder 68 supplies the air interrupter signal C2 input from the system PLC 67 to the air interrupter 63 after the set delay time. The air supply introduced through the air supply 62 is cut off by the air cutoff signal C2 supplied to the air blocker 63. As the air is blocked, the regulator 64 senses the pressure and temperature of the PECVD apparatus 50. At the desired pressure and temperature, the pressure switch 65 is turned on so that the process chamber maintains a constant pressure.
이에 따라, 소정기간 지연된 에어차단신호와 가스공급신호속도 차이를 줄일 수 있게 된다. 즉, 도 9에 도시된 바와 같이 제1 기간(Ⅰ)에는 에어가 공급됨과 동시에 증착가스가 공급되며, 제2 기간(Ⅱ)에는 에어가 차단됨과 동시에 클리닝가스가 공급된다.Accordingly, it is possible to reduce the difference between the air cutoff signal and the gas supply signal speed delayed for a predetermined period. That is, as shown in FIG. 9, the deposition gas is supplied at the same time as the air is supplied in the first period (I), and the cleaning gas is supplied at the same time as the air is blocked in the second period (II).
상술한 바와 같이, 본 발명에 따른 증착장비 및 그 구동방법에 의하면, 에어차단신호속도와 가스공급속도의 차이시간을 줄여주기 위해 지연기를 설치하게 된다. 이 지연기에 의해 가스가 공급된 후 소정시간 후 에어가 차단됨으로써 증착가스의 미반응 및 유해가스 발생을 최소화할 수 있다.As described above, according to the deposition apparatus and the driving method thereof according to the present invention, a delay unit is provided to reduce the difference time between the air cutoff signal speed and the gas supply speed. Since the air is cut off after a predetermined time after the gas is supplied by the retarder, the unreacted gas and the generation of harmful gas can be minimized.
이상 설명한 내용을 통해 당업자라면 본 발명의 기술사상을 일탈하지 아니하는 범위에서 다양한 변경 및 수정이 가능함을 알 수 있을 것이다. 따라서, 본 발명의 기술적 범위는 명세서의 상세한 설명에 기재된 내용으로 한정되는 것이 아니라 특허 청구의 범위에 의해 정하여 져야만 할 것이다.Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.
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