KR20030039518A - A lithography apparatus for semiconductor processing having a device to remove particles in holder - Google Patents

A lithography apparatus for semiconductor processing having a device to remove particles in holder Download PDF

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Publication number
KR20030039518A
KR20030039518A KR1020010070459A KR20010070459A KR20030039518A KR 20030039518 A KR20030039518 A KR 20030039518A KR 1020010070459 A KR1020010070459 A KR 1020010070459A KR 20010070459 A KR20010070459 A KR 20010070459A KR 20030039518 A KR20030039518 A KR 20030039518A
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South Korea
Prior art keywords
holder
wafer
light source
reticle
particles
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KR1020010070459A
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Korean (ko)
Inventor
김해성
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삼성전자주식회사
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Priority to KR1020010070459A priority Critical patent/KR20030039518A/en
Publication of KR20030039518A publication Critical patent/KR20030039518A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Abstract

PURPOSE: A lithography apparatus for semiconductor processing having a device to remove particles is provided to eliminate micro particles or foreign substance possibly remaining on the surface of a wafer holder by spraying nitrogen gas supplied from the outside on the wafer holder in which a wafer is settled and a process is performed. CONSTITUTION: A light source is prepared. A plurality of lens groups focus the incident light from the light source. A reticle in which a pattern is formed is installed between the light source and the plurality of lens groups. A wafer to which the pattern of the reticle is projected is settled in a holder(210). A particle removing unit removes the particles remaining on the holder, installed in the vicinity of the holder.

Description

파티클 제거장치를 가진 반도체 제조용 노광장치{A lithography apparatus for semiconductor processing having a device to remove particles in holder}A lithography apparatus for semiconductor processing having a device to remove particles in holder}

본 발명은 반도체 제조용 노광장치에 관한 것으로, 더욱 상세하게는 노광이 이루어지는 웨이퍼가 안착되는 홀더에 존재할 수 있는 파티클을 제거하는 파티클 제거장치를 가진 반도체 제조용 노광장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for semiconductor manufacturing, and more particularly, to an exposure apparatus for semiconductor manufacturing having a particle removing apparatus for removing particles that may be present in a holder on which a wafer to be exposed is placed.

일반적으로 반도체 제조용 노광장치는 반도체 제조 공정중 노광공정에 사용되는 것으로, 이 노광공정은 레티클 상의 패턴을 반도체 웨이퍼의 표면에 도포되어 있는 얇은 포토레지스트에 옮겨 놓은 것을 말한다. 이 패턴들은 이후 수행되는 공정인 식각공정 때 웨이퍼 표면과 포토레지스트 사이에 놓여 있는 공정상의 실질적 마스크 역할을 하는 SiO2, Si3N4등과 같은 박막층에 패턴을 형성시키는 식각 방지층으로 사용되어지는 것이다.In general, an exposure apparatus for manufacturing a semiconductor is used in an exposure process during a semiconductor manufacturing process, which refers to transferring a pattern on a reticle to a thin photoresist applied to a surface of a semiconductor wafer. These patterns are used as an etch stop layer for forming a pattern on a thin film layer, such as SiO 2 , Si 3 N 4 , which serves as a practical mask placed between the wafer surface and the photoresist during an etching process, which is a subsequent process.

이러한 노광공정에 사용되는 노광장치는 광원과 이 광원의 하부에 설치되는 집광렌즈와 이 집광렌즈 하부에 설치되는 레티클 및 레티클 하부에 위치하는 투영렌즈가 차례로 배치되어 있다. 그리고 투영렌즈의 하부에는 스테이지가 마련되고, 스테이지 상에는 실질적으로 웨이퍼가 안착 지지되는 홀더가 마련되어 있다.In the exposure apparatus used in such an exposure process, a light source, a light collecting lens provided below the light source, a reticle provided below the light collecting lens, and a projection lens located below the reticle are arranged in this order. A stage is provided below the projection lens, and a holder on which the wafer is substantially seated and supported is provided on the stage.

이러한 노광장치에서의 공정 진행중 홀더에 안착된 웨이퍼는 매우 균일한 평탄도를 유지하여야만 광이 주사되는 초점이 정확히 맞추어지게 된다. 그런데, 반도체 제조공정에서는 미세 파티클의 제거를 위하여 수많은 파티클 제거장치들이 사용되지만 완전하게 이러한 파티클의 제거가 이루어지지는 않는다.During the process of the exposure apparatus, the wafer seated on the holder must maintain a very uniform flatness so that the light is focused correctly. By the way, in the semiconductor manufacturing process, a number of particle removal devices are used to remove fine particles, but such particles are not completely removed.

특히 노광공정 진행 중 웨이퍼가 스테이지의 홀더로부터 로딩/언로딩 될 때 파티클의 일부가 홀더 상에 위치할 수 있는데, 만약 홀더 상에 파티클이 존재하게 되면 홀더에 안착된 웨이퍼의 평탄도가 균일하지 않게 되어 이후 노광공정 진행중 이 파티클에 의한 초점 불량으로 인하여 웨이퍼의 노광 필드에서의 패턴 이미지의 불량이 발생하여 반도체 소자의 제조수율이 떨어지게 되는 문제점이 있다.Particularly, when the wafer is loaded / unloaded from the holder of the stage during the exposure process, a part of the particles may be placed on the holder. As a result, defects in the pattern image in the exposure field of the wafer may occur due to the focus failure caused by the particles during the exposure process, thereby lowering the manufacturing yield of the semiconductor device.

본 발명은 전술한 문제점을 해결하기 위한 것으로, 본 발명의 목적은 웨이퍼가 안착되어 공정이 진행되는 웨이퍼 홀더에 외부에서 공급되는 질소가스를 분사하여 홀더의 표면에 잔존할 수 있는 미세 파티클 및 이물질을 제거할 수 있도록 한 파티클 제거장치를 가진 반도체 제조용 노광장치를 제공하기 위한 것이다.The present invention is to solve the above-mentioned problems, an object of the present invention is to spray the nitrogen gas supplied from the outside to the wafer holder in which the wafer is seated process is fine particles and foreign matter that can remain on the surface of the holder An object of the present invention is to provide an exposure apparatus for manufacturing a semiconductor having a particle removing apparatus that can be removed.

도 1은 일반적인 반도체 제조용 노광장치의 구성을 개략적으로 도시한 도면이다.1 is a view schematically showing a configuration of an exposure apparatus for manufacturing a general semiconductor.

도 2는 본 발명에 따른 파티클 제거장치가 마련된 반도체 제조용 노광장치의 스테이지를 도시한 측면도이다.2 is a side view illustrating a stage of an exposure apparatus for manufacturing a semiconductor provided with a particle removing device according to the present invention.

도 3은 본 발명에 따른 파티클 제거장치가 마련된 반도체 제조용 노광장치를 도시한 사시도이다.3 is a perspective view illustrating an exposure apparatus for manufacturing a semiconductor provided with a particle removing device according to the present invention.

<도면의 주요 부분에 대한 부호 설명><Description of the symbols for the main parts of the drawings>

200...스테이지200 ... Stage

210...홀더210 ... holder

300...분사노즐300 ... injection nozzle

320...지지브라켓320.Support Bracket

330...공급원330 ... Source

340...밸브340 ... valve

350...분배기350 ... distributor

전술한 목적을 달성하기 위한 본 발명에 따른 반도체 제조용 노광장치는 광원; 상기 광원으로부터 입사된 광을 집속하는 다수의 렌즈군; 상기 광원과 상기 렌즈군 사이에 설치되며 패턴이 형성된 레티클; 상기 레티클의 패턴이 투영되는 웨이퍼가 안착되는 홀더; 상기 홀더의 주변에 설치되어 상기 홀더 상에 잔존하는 파티클을 제거하는 파티클 제거수단을 구비한다.Exposure apparatus for manufacturing a semiconductor according to the present invention for achieving the above object is a light source; A plurality of lens groups for focusing light incident from the light source; A reticle disposed between the light source and the lens group and having a pattern formed thereon; A holder on which a wafer onto which the pattern of the reticle is projected is seated; It is provided around the holder is provided with a particle removing means for removing the particles remaining on the holder.

그리고 바람직하게 상기 파티클 제거수단은 출구가 상기 홀더의 표면을 향하도록 된 적어도 하나이상의 분사노즐과 상기 분사노즐로 압축공기를 분배하여 공급하는 분배기와 상기 분배기로 소정의 가스를 공급하는 공급원을 포함한다.And preferably the particle removing means comprises at least one injection nozzle having an outlet directed to the surface of the holder, a distributor for distributing and supplying compressed air to the injection nozzle, and a supply source for supplying a predetermined gas to the distributor. .

이하에서는 본 발명에 따른 하나의 바람직한 실시예를 도면을 참조하여 설명하기로 한다.Hereinafter, one preferred embodiment according to the present invention will be described with reference to the drawings.

본 발명에 따른 반도체 제조용 노광장치의 구성은 도 1에 도시된 바와 같이 364nm 파장의 수은 램프 또는 248nm 파장의 레이저로 된 광원(100)과 이 광원(100)의 하부에 설치되어 광원(100)으로부터 주사된 광을 집광하는 집광렌즈(110)를 구비한다.As shown in FIG. 1, the exposure apparatus for manufacturing a semiconductor according to the present invention includes a light source 100 made of a mercury lamp having a wavelength of 364 nm or a laser having a wavelength of 248 nm and a light source 100 installed below the light source 100, A condenser lens 110 condenses the scanned light.

그리고 집광렌즈(110)의 하부에는 소정의 패턴이 형성된 레티클(reticle:120)이 마련되고, 레티클(120)을 하부에는 레티클(120)을 통과한 이미지를 1/5로 축소 투영하는 투영렌즈(130)가 장착된다.In addition, a reticle 120 having a predetermined pattern is formed under the condenser lens 110, and a projection lens configured to reduce and project the image passing through the reticle 120 to 1/5 under the reticle 120. 130 is mounted.

또한 투영렌즈(130)의 하부에는 스테이지(200)가 장착되고, 스테이지(200)에는 노광공정이 수행되는 웨이퍼(140)가 안착되는 홀더(210)가 마련된다. 한편 스테이지(200)에는 홀더(210) 표면에 미세 파티클을 홀더(210) 표면으로부터 제거하는 파티클 제거장치가 설치된다.In addition, the stage 200 is mounted below the projection lens 130, and the holder 210 is provided on the stage 200 on which the wafer 140 on which the exposure process is performed is mounted. On the other hand, the stage 200 is provided with a particle removal device for removing the fine particles from the surface of the holder 210 on the surface of the holder (210).

이 파티클 제거장치는 도 2와 도 3에 도시된 바와 같이 전후, 좌우로 위치조절이 가능하도록 된 스테이지(200)에 설치되는데, 홀더(210)의 표면으로 출구가 개구되어 있는 네 개의 압축공기 분사노즐(300)을 구비한다. 여기서 분사노즐(300)로부터 분사되는 압축공기는 질소로 마련된다. 그리고 질소공기를 공급하기 위한 공급원(330)과 이 공급원(330)으로부터 제공되는 압축공기의 공급을 제어하기 위한 솔레노이드 밸브(340)를 구비한다.2 and 3, the particle removing device is installed on the stage 200, which is capable of positioning back and forth, left and right, and four compressed air jets having an outlet opening to the surface of the holder 210. The nozzle 300 is provided. The compressed air injected from the injection nozzle 300 is provided with nitrogen. And a source 330 for supplying nitrogen air and a solenoid valve 340 for controlling the supply of compressed air provided from the source 330.

또한 솔레노이드 밸브(340)로부터 공급된 질소가스를 각각의 분사노즐(300)로 분배하여 공급하기 위한 분배기(350)가 설치되고, 분배기(350)에서는 네 개의공급관(330)이 각각의 분사노즐(300)로 연장되어 있다.In addition, a distributor 350 for distributing and supplying nitrogen gas supplied from the solenoid valve 340 to each injection nozzle 300 is installed. In the distributor 350, four supply pipes 330 are provided for each injection nozzle ( 300).

한편, 분사노즐(300)은 그 분사방향이 홀더(310) 표면으로 향하도록 지지브라켓(320)에 의하여 경사지게 지지되어 있다.On the other hand, the injection nozzle 300 is inclined by the support bracket 320 so that the injection direction toward the surface of the holder 310.

이하에서는 본 발명에 따른 반도체 제조용 노광장치에서의 파티클 제거장치의 작용상태에 대하여 설명하기로 한다.Hereinafter, an operation state of the particle removing device in the exposure apparatus for manufacturing a semiconductor according to the present invention will be described.

먼저 노광공정은 웨이퍼(140) 상에 포토레지스트를 도포하는 공정과 포토레지스트가 도포된 후 웨이퍼(140)를 베이킹하여 이 포토레지스트를 경화시키는 공정을 거친 후 웨이퍼(140) 상에 포토마스크를 형성할 때 적용된다.First, the exposure process is a process of applying a photoresist on the wafer 140 and a process of baking the wafer 140 and curing the photoresist after the photoresist is applied to form a photomask on the wafer 140. Is applied when.

이때의 노광공정의 수행을 위해서 웨이퍼(140)는 이송로봇(미도시)에 의하여 스테이지(200)의 홀더(210) 위에 안착되는데, 그 전에 파티클 제거장치가 작동하여 홀더(210)상의 이물질을 제거하도록 한다.In order to perform the exposure process at this time, the wafer 140 is seated on the holder 210 of the stage 200 by a transfer robot (not shown), before the particle removal device is operated to remove foreign substances on the holder 210. Do it.

이때의 파티클 제거장치의 작동은 솔레노이드 밸브(340)가 개방되어 공급원(330)으로부터 질소가스가 유입되면 질소가스는 분배기(340)를 거쳐 각각의 공급관(310)으로 공급되고, 각각의 공급관(310)으로 공급된 질소가스는 각각의 분사노즐(300)을 통하여 홀더(210)의 표면으로 분사된다.In this case, the particle removal device is operated when the solenoid valve 340 is opened and nitrogen gas is introduced from the supply source 330, and the nitrogen gas is supplied to each supply pipe 310 through the distributor 340, and each supply pipe 310 is provided. The nitrogen gas supplied to) is injected to the surface of the holder 210 through each injection nozzle (300).

그리고 홀더(210)의 표면으로 분사된 질소가스는 홀더(210) 표면에 잔존할 수 있는 파티클을 홀더(210)로부터 제거하게 된다.In addition, the nitrogen gas injected onto the surface of the holder 210 removes particles that may remain on the surface of the holder 210 from the holder 210.

그런 다음에 웨이퍼(140)가 홀더(210) 상에 안착되고, 이후 광원(100)으로부터 광이 조사되면 먼저 광은 집광렌즈(110)를 거치면서 집광된 후 레티클(120)을 거치면서 패턴 이미지를 투영하고, 이 패턴 이미지는 투영렌즈(130)를 거치면서1/5로 축소되어 웨이퍼(140)에 상이 맺히도록 함으로써 노광공정이 완료된다.Then, when the wafer 140 is seated on the holder 210, and then the light is irradiated from the light source 100, the light is first collected through the condenser lens 110 and then patterned while passing through the reticle 120. And the pattern image is reduced to 1/5 while passing through the projection lens 130 to form an image on the wafer 140, thereby completing the exposure process.

한편, 노광이 완료된 후 웨이퍼(140)가 언로딩될 때에도 파티클 제거장치는 다시 작동하여 홀더(210) 상의 이물질을 제거하도록 하는 것이 바람직할 것이다.Meanwhile, even when the wafer 140 is unloaded after the exposure is completed, the particle removing device may be operated again to remove foreign substances on the holder 210.

상술한 바와 같이 본 발명에 따른 파티클 제거수단은 질소가스를 홀더(210) 표면에 직접 분사하여 홀더(210) 표면의 파티클을 제거하도록 할 수 있으나. 이와 달리 홀더(210) 표면으로 파티클을 흡입 제거하도록 하는 장치로도 구현이 가능할 것이다.As described above, the particle removing means according to the present invention may directly inject nitrogen gas onto the surface of the holder 210 to remove particles on the surface of the holder 210. Alternatively, the device may be implemented as a device to suction and remove particles to the holder 210 surface.

그러므로 기본적으로 노광장치의 홀더(210) 표면에 잔존하는 파티클을 제거하도록 한 흡입방식, 또는 공기 분사방식을 적용한 다른 변형된 실시예들은 모두 본 발명의 기술적 범주에 포함된다고 보아야 한다.Therefore, it should be regarded that all the modified embodiments in which the suction method or the air blowing method are applied to basically remove particles remaining on the surface of the holder 210 of the exposure apparatus are included in the technical scope of the present invention.

이상과 같은 본 발명에 따른 반도체 제조용 노광장치는 웨이퍼가 안착되는 홀더 표면에 잔존할 수 있는 파티클을 제거하도록 함으로써 홀더 위에 안착되는 웨이퍼의 평탄도가 이러한 파티클에 의하여 나빠지는 것을 방지하도록 하여 이후 노광공정 진행시 초점 불량이 발생하는 것이 방지하여 공정효율을 향상시키며 최종에 반도체 소자 제조수율을 높일 수 있는 이점이 있다.The exposure apparatus for manufacturing a semiconductor according to the present invention as described above removes particles that may remain on the holder surface on which the wafer is seated, thereby preventing the flatness of the wafer seated on the holder from being deteriorated by such particles. There is an advantage that can improve the process efficiency and finally increase the semiconductor device manufacturing yield by preventing the occurrence of focus failure during progress.

Claims (2)

광원;Light source; 상기 광원으로부터 입사된 광을 집속하는 다수의 렌즈군;A plurality of lens groups for focusing light incident from the light source; 상기 광원과 상기 렌즈군 사이에 설치되며 패턴이 형성된 레티클;A reticle disposed between the light source and the lens group and having a pattern formed thereon; 상기 레티클의 패턴이 투영되는 웨이퍼가 안착되는 홀더;A holder on which a wafer onto which the pattern of the reticle is projected is seated; 상기 홀더의 주변에 설치되어 상기 홀더 상에 잔존하는 파티클을 제거하는 파티클 제거수단을 구비한 것을 특징으로 하는 반도체 제조용 노광장치.And a particle removing means installed in the periphery of the holder to remove particles remaining on the holder. 제 1항에 있어서, 상기 파티클 제거수단은 출구가 상기 홀더의 표면을 향하도록 된 적어도 하나이상의 분사노즐과 상기 분사노즐로 압축공기를 분배하여 공급하는 분배기와 상기 분배기로 소정의 가스를 공급하는 공급원을 포함한 것을 특징으로 하는 반도체 제조용 노광장치.2. The apparatus of claim 1, wherein the particle removing means comprises at least one injection nozzle having an outlet facing the surface of the holder and a distributor for distributing and supplying compressed air to the injection nozzle and a supply source for supplying a predetermined gas to the distributor. Exposure apparatus for manufacturing a semiconductor comprising a.
KR1020010070459A 2001-11-13 2001-11-13 A lithography apparatus for semiconductor processing having a device to remove particles in holder KR20030039518A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101053996B1 (en) * 2008-11-19 2011-08-04 세메스 주식회사 Substrate processing apparatus and substrate processing method using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101053996B1 (en) * 2008-11-19 2011-08-04 세메스 주식회사 Substrate processing apparatus and substrate processing method using the same

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