KR20030037908A - Photoresist developer for manufacturing semicomductor device - Google Patents

Abstract

PURPOSE: A photoresist developer for manufacturing a semiconductor device is provided to be capable of removing subsidence from a mist trap by using an air supply part. CONSTITUTION: A spin chuck(48) is installed at the center portion of a process chamber(4) for loading a wafer(50). A plurality of nozzles(52,54,56) are located at the upper portion of the wafer(50) for supplying a developer solution. A mist trap(58) having an exhaust part(59) and a concavity(61) is connected through connection lines(42,44) to the process chamber(4). An air supply part is connected with the exhaust part(59) for supplying air to the exhaust part(59) at the predetermined pressure. An exhaust line(66) is connected with the exhaust part(59). A pumping line(60) is connected with the lateral portion of the concavity(61). The air supply part further includes an air supply line(70) connected with the exhaust part(59), an air supply source(72) connected with the air supply line(70), and a valve(74) installed on the air supply line(70).

Description

Photoresist developer for semiconductor device manufacturing {Photoresist developer for manufacturing semicomductor device}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist developing apparatus for manufacturing a semiconductor device, and more particularly, that the discharge port of a mist trap is blocked by deposits generated by the deposition of ultrapure water, a developing solution, and a waste solution mixed with photoresist. It relates to a photoresist developing device for manufacturing a semiconductor device that can be prevented.

In general, various thin films, such as an oxide film, a nitride film, and a metal film, are formed on a substrate for manufacturing a semiconductor device, and the thin films are formed in a pattern by a photolithography process.

Such a photolithography process includes an exposure process for scanning light by placing a mask having a circuit pattern designed on a substrate on which a thin photoresist is applied, and a portion exposed by light and performing exposure by the exposure process. And a developing step of selectively separating the portions not removed with the developer.

In the developing process, an exposed substrate is placed in a bath containing a developer and waits for a predetermined time, and then the developer is imbedded with a predetermined amount of developer on a stationary substrate, thereby releasing the developer onto the substrate. Wetting is followed by a Puddle method for cleaning the developer after a certain reaction waiting time, a spray method for rotating the exposed substrate and spraying the developer on top thereof.

In the conventional photoresist developing device for manufacturing a semiconductor device of the spray method, as shown in FIG. 1, a spin chuck 18 is formed at a central portion to fix the exposed wafer 20 and to rotate by driving the motor 16. The process chamber 2 is provided.

An ultrapure water supply nozzle 22 capable of supplying ultrapure water on the wafer 20 seated on the spin chuck 18 and the wafer 20 seated on the spin chuck 18 are disposed on the process chamber 2. The first developer supply nozzle 24 and the second developer supply nozzle 26 capable of supplying a developer to the above are provided.

In addition, a first discharge line 10 is formed at one side of the process chamber 2 to discharge ultrapure water, a developer, and a waste liquid such as photoresist etched by the developer, and the other side of the process chamber 2 is also formed. Also, the first connection line 12 and the second connection line 14 through which the waste liquid is formed are formed.

The first connection line 12, the second connection line 14, and a mist trap 28 are respectively connected to each other.

Here, the bottom of one side of the mist trap 28 is formed with a deep recessed portion 31 of the well shape, the bottom of the well-shaped deep depressions 31 of the discharge port for discharging the waste liquid ( 29) is formed.

In addition, one side of the mist trap 28 and the pumping line 30 is applied to the pumping force by the air conditioning system of the semiconductor manufacturing equipment is connected, the other side lower portion of the mist trap 28 and the second discharge line 36 ) Is connected by a set screw 38.

Here, the first discharge line 10 is connected to the end of the second discharge line 36, on the pumping line 30 to adjust the strength of the pumping force by adjusting the opening and closing area of the pumping line (auto damping ( Auto damp: 32) and manual damp (34) are installed sequentially.

Therefore, when the wafer 20 subjected to the exposure process is seated on the spin chuck 18, the spin chuck 18 is rotated at a predetermined speed by driving the motor 16 while the wafer 20 is fixed. Done.

Next, the first developer supply nozzle 24 and the second developer supply nozzle 26 spray a predetermined amount of developer onto the wafer 20.

At this time, the developer injected onto the wafer 20 moves from the center of the wafer 20 to the edge direction by the centrifugal force caused by the rotation of the spin chuck 18, thereby receiving the light 20 by performing the preceding exposure process. Photoresist in the region of the wafer 20 that is not subjected to light) is selectively etched.

Then, the developer injected onto the wafer 20 flows from the top of the wafer 20 to the bottom surface of the process chamber 2, and then the first discharge line 10, the first connection line 12, and the second connection line ( 14). At this time, the developer introduced into each of the discharge lines 10, 12, and 14 includes an etched photoresist.

Subsequently, the ultrapure water supply nozzle 22 injects a predetermined amount of ultrapure water onto the wafer 20. At this time, the ultrapure water sprayed on the wafer 20 moves in the edge direction from the center of the wafer 20 by the centrifugal force by the rotation of the spin chuck 18 and cleans the photoresist and the developer present on the entire surface of the wafer 20. .

The ultrapure water sprayed on the wafer 20 flows from the edge of the wafer 20 to the bottom surface of the process chamber 2, and then the first discharge line 10, the first connection line 12, and the second connection line. (14).

At this time, the ultrapure water, the developer, and the waste liquid, such as photoresist etched by the developer, are introduced into the mist trap 28 into the first connection line 12 and the second connection line 14. In this case, the waste liquid is introduced into the mist trap 28 because the pumping line 30 connected to the process system of the semiconductor manufacturing equipment performs the pumping operation continuously.

Then, the waste liquid introduced into the mist trap 28 is introduced into the second discharge line 36 through the discharge port 29 formed in the bottom portion of the mist trap 28 and then discharged to the outside.

In addition, the waste liquid introduced into the first discharge line 10 is discharged to the outside through the second discharge line 36 connected to the first discharge line 10.

However, the photoresist and the like of the waste liquid introduced into the mist trap form a deposit in a long process, so that the discharge hole formed under the mist trap is blocked by the deposit.

Therefore, the waste liquid introduced into the mist trap is discharged into the pumping line beyond the deep depression of the well shape formed on the bottom of the mist trap, thereby contaminating the entire semiconductor manufacturing line connected to the pimping line.

In particular, when a small sized leak site exists in another pumping line connected to the pumping line, the waste liquid leaks into the clean room through the leak site and contaminates the clean room.

An object of the present invention is to provide a photonic device for producing a semiconductor device capable of eliminating the blockage of the discharge trap of the mist trap in which the waste liquid discharged from the process chamber is intercepted by deposits such as photoresist. There is provided a resist developing apparatus.

1 is a schematic configuration diagram illustrating a conventional photoresist developing apparatus for manufacturing a semiconductor device.

2 is a block diagram illustrating a photoresist developing apparatus for manufacturing a semiconductor device according to an embodiment of the present invention.

※ Explanation of codes for main parts of drawing

2, 4: process chamber 10, 40: first discharge line

12, 42: first connection line 14, 44: second connection line

16, 46: motor 18, 48: spin chuck

20, 50: wafer 22, 52: ultrapure water supply nozzle

24, 54: 1st developer supply nozzle 26, 56: 2nd developer supply nozzle

28, 58; Mist trap 29, 59: discharge port

30, 60: pumping line 31, 61: depression

32, 62: auto damp 34, 64: manual damp

36, 66: 2nd discharge line 38, 68: fixing screw

70: air supply line 72: air supply source

74: valve

A photoresist developing device for manufacturing a semiconductor device according to the present invention for achieving the above object comprises: a process chamber in which a spin chuck that rotates by a motor is fixed to an exposed wafer; A nozzle capable of supplying a developing solution onto a wafer seated on the spin chuck; A mist trap connected to one side of a bottom portion of the process chamber by a connection line and having a depression having a discharge hole at a bottom portion of the bottom of the process chamber; Air supply means capable of supplying air to the discharge port at a predetermined pressure; A discharge line connected to the discharge port of the mist trap; And

And a pumping line connected to the upper side of the recess of the mist trap.

The air supply means may include an air supply line connected to the discharge port, an air supply source connected to the air supply line, and an open / close valve installed on the air supply line.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a block diagram illustrating a photoresist developing apparatus for manufacturing a semiconductor device according to an embodiment of the present invention.

In the photoresist developing apparatus for manufacturing a semiconductor device according to the present invention, as shown in FIG. 2, the spin chamber 48, which can rotate at a predetermined speed by driving the motor 46, is provided with a process chamber 4 having a central portion. Equipped.

In this case, the wafer 40 on which the exposed photoresist is applied is vacuum-adsorbed and fixed on the spin chuck 48, and the process chamber 4 is formed in a bath shape in which the top is open.

In addition, an ultrapure water supply nozzle 52 capable of supplying ultrapure water for cleaning on the wafer 50 seated on the spin chuck 48 is provided at one side of the process chamber 4, and the process chamber 4 is provided. The first developer supply nozzle 54 and the second developer supply nozzle 56 capable of supplying the developer on the wafer 50 seated on the spin chuck 48 are provided on the other side.

At this time, the first developer supply nozzle 54 is capable of supplying the developer to the center portion of the wafer 50 fixed on the spin chuck 48, and the second developer supply nozzle 56 is the spin chuck 48. The developer can be supplied to the periphery of the edge of the wafer 50 fixed on the wafer).

In addition, a first discharge line 40 is formed at one side of the bottom surface of the process chamber 4 through which ultrapure water, a developer, and wastewater such as photoresist etched by the developer are discharged. The first connection line 42 and the second connection line 44 through which the wastewater is discharged are also formed at the side.

The first connection line 42 and the second connection line 44 and the mist trap 58 are respectively connected to each other.

Here, a deep depression 61 of a well shape is formed at one side of the bottom of the mist trap 58 so as to accommodate the wastewater, and a bottom for discharging the wastewater at the bottom of the depression 61. An outlet 59 is formed.

In addition, according to the present invention, the discharge hole 59 of the mist trap 58 is supplied with air having a predetermined pressure to the deposits accumulated in the discharge port 59 by depositing the deposits accumulated in the discharge port 59. An air supply line 70 is formed to remove the air supply line, and the air supply line 70 and the air supply source 72 are connected to each other. At this time, on the air supply line 70 is installed a valve 74 for performing the opening and closing operation.

In addition, an upper end side of the recess 61 of the mist trap 58 and a pumping line 60 to which the pumping force by the air conditioning system of the semiconductor manufacturing equipment is applied are connected, and the recess of the mist trap 58 The discharge port 59 formed in the 61 and the second discharge line 66 are connected by a fixing screw 68.

Here, although not shown in the drawing, the first discharge line 40 is connected to the end of the second discharge line 66, and the pumping force is controlled on the pumping line 60 by adjusting the opening and closing area of the pumping line 60. The auto damper 62 and the manual damper 64 for adjusting the intensity of the light are sequentially installed.

Therefore, when the wafer 40 on which the exposure process has been performed is seated on the spin chuck 48, the spin chuck 48 is rotated at a predetermined speed by driving the motor 46 while the wafer 40 is fixed. Done.

Next, the first developer supply nozzle 54 supplies a certain amount of developer to the center of the wafer 50, and the second developer supply nozzle 56 sprays a certain amount of developer to the periphery of the edge of the wafer 40. Done.

At this time, each developer injected onto the wafer 40 is moved by the centrifugal force generated by the rotation of the spin chuck 48 in the direction of the edge of the wafer 40 to receive the light by performing the preceding exposure process. The photoresist in the wafer 40 area or in the non-lighted wafer 40 area is selectively etched away.

Then, the developer injected onto the wafer 40 flows from the top of the wafer 40 to the bottom surface of the process chamber 4, and then the first discharge line 40, the first connection line 42, and the second connection line ( 44).

At this time, the developer flowing into the first emission line 40 and the connection lines 42 and 44 includes a photoresist etched by the developer.

Subsequently, the ultrapure water supply nozzle 52 injects a predetermined amount of ultrapure water onto the wafer 40.

At this time, the ultrapure water sprayed on the wafer 40 moves in the edge direction from the center of the wafer 40 by the centrifugal force generated by the rotation of the spin chuck 48 and the etched photoresist existing on the entire surface of the wafer 40; Clean the developer.

The ultrapure water sprayed on the wafer 40 flows from the edge of the wafer 40 to the bottom surface of the process chamber 4, and then the first discharge line 40, the first connection line 42, and the second connection line. Flows into (44).

In addition, the waste liquid formed of the ultrapure water, the developer, and the photoresist etched by the developer is introduced into the mist trap 58 into the first connection line 42 and the second connection line 44.

At this time, the inflow of the waste liquid into the mist trap 58 is because the pumping line 60 connected to the process system of the semiconductor manufacturing equipment continuously pumps the waste liquid.

In addition, the waste liquid introduced into the mist trap 58 flows into the second discharge line 66 through the discharge port 59 formed in the bottom of the depression 61 of the mist trap 58 and then is discharged to the outside.

In addition, the waste liquid introduced into the first discharge line 40 is discharged to the outside through the second discharge line 66 connected to the first discharge line 40.

In addition, when the discharge port 59 formed in the bottom of the depression 61 of the mist trap 58 is blocked by deposits such as photoresist of waste liquid in a series of processes, it is installed on the air supply line 70. The valve 74 is opened to supply air from the air supply source 72 to the discharge port 59 at a predetermined pressure.

Therefore, the clogging of the discharge port 59 is eliminated by depositing the deposit accumulated in the discharge port 59 by the pressure of the air.

According to the present invention, if the photoresist of waste liquid introduced into the mist trap is deposited at the discharge port during a long process and the discharge port is blocked, the air is discharged by supplying air having a predetermined pressure to the discharge port through the air supply line. The sediment deposited on can be removed.

Therefore, the waste liquid introduced into the mist trap is discharged to the pumping line beyond the deep depression of the well shape formed on the bottom surface of the mist trap, thereby preventing the contamination of the entire semiconductor manufacturing line connected to the pimping line.

In addition, when a leak portion of a minute size is present in another pumping line connected to the pumping line, waste liquid is leaked into the clean room through the leak portion, thereby preventing contamination of the clean room.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and such modifications and modifications belong to the appended claims.

Claims (2)

A process chamber in which a spin chuck is fixed to the exposed wafer and rotated by a motor; A nozzle capable of supplying a developing solution onto a wafer seated on the spin chuck; A mist trap connected to one side of a bottom portion of the process chamber by a connection line and having a depression having a discharge hole at a bottom portion of the bottom of the process chamber; Air supply means capable of supplying air to the discharge port at a predetermined pressure; A discharge line connected to the discharge port of the mist trap; And A pumping line connected to the upper side of the depression of the mist trap; A photoresist developing device for manufacturing a semiconductor device, characterized in that comprising a. The apparatus of claim 1, wherein the air supply means comprises an air supply line connected to the discharge port, an air supply source connected to the air supply line, and an opening / closing valve installed on the air supply line. .