KR20030026500A - Isolation method for semiconductor device using Reverse Selectivity Slurry - Google Patents
Isolation method for semiconductor device using Reverse Selectivity Slurry Download PDFInfo
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- KR20030026500A KR20030026500A KR1020010059504A KR20010059504A KR20030026500A KR 20030026500 A KR20030026500 A KR 20030026500A KR 1020010059504 A KR1020010059504 A KR 1020010059504A KR 20010059504 A KR20010059504 A KR 20010059504A KR 20030026500 A KR20030026500 A KR 20030026500A
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- oxide film
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- 239000002002 slurry Substances 0.000 title claims abstract description 40
- 238000002955 isolation Methods 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 57
- 150000004767 nitrides Chemical class 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- -1 peroxide nitride Chemical class 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000005498 polishing Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 210000003323 beak Anatomy 0.000 description 2
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 2
- 229910001942 caesium oxide Inorganic materials 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Element Separation (AREA)
Abstract
Description
본 발명은 반도체 소자의 소자분리 방법에 관한 것으로, 보다 상세하게는 반도체 제조 공정 중 화학적 기계적 연마 (Chemical Mechanical Polishing; 이하 "CMP" 라 칭함)공정을 실시하는 과정에서 역 선택비를 가지는 슬러리를 이용하는 소자분리 방법이며, 더욱 상세하게는 얇은 트랜치 소자분리(Shallow trench isolation; 이하 "STI"라 칭한) CMP 공정을 두 가지의 서로 다른 선택비를 가지는 슬러리를 이용하여 연속적으로 실시하는 소자분리 방법이다.The present invention relates to a device isolation method of a semiconductor device, and more particularly, using a slurry having a reverse selectivity in the process of performing chemical mechanical polishing (hereinafter referred to as "CMP") during the semiconductor manufacturing process A device isolation method, and more particularly, is a device isolation method in which a thin trench isolation ("STI") CMP process is continuously performed using a slurry having two different selectivity ratios.
반도체 소자의 밀도, 집적도가 증가함에 따라 소자분리 영역의 폭을 좁게 형성시키기 위한 공정 기술은 점점 중요해지고 있으며, 칩과 웨이퍼 표면 영역의 요철에 대한 광역 평탄화 기술의 중요성이 대두되기 시작하였다.As the density and the degree of integration of semiconductor devices increase, process technology for narrowing the width of device isolation regions becomes increasingly important, and the importance of wide area planarization techniques for irregularities in the chip and wafer surface regions has begun to emerge.
이러한 광역 평탄화 기술 중에 하나인 CMP 공정은 반도체 소자를 제조할 때 사용하는 리소그래피 (lithography)공정 및 후속 공정을 원활하게 하기 위해 도입된 것으로서, 반도체 소자가 점차 미세화, 고밀도화 및 다층 구조를 갖게 됨에 따라 웨이퍼의 연마 속도와 슬러리에 포함되는 화학물질을 조절하여, 초미립 연마제가 웨이퍼 표면의 특정 부위만을 기계적으로 가공하여 제거함으로써, 기존의 전면 식각 공정으로는 이룰 수 없었던 평탄화를 가져오는 기술이다.The CMP process, which is one of such wide area planarization techniques, was introduced to facilitate the lithography process and subsequent processes used to manufacture semiconductor devices. As the semiconductor devices gradually become finer, more dense, and have a multi-layered structure, wafers By controlling the polishing rate and chemicals contained in the slurry, the ultrafine abrasive is mechanically processed to remove only a specific portion of the wafer surface, thereby bringing a planarization that cannot be achieved by the conventional front etching process.
종래의 반도체 소자의 소자 분리막은 실리콘 질화막 (Si3N4)을 이용하여 선택적으로 기판을 열 산화 시켜 소자 분리막을 형성하는 로코스 (Local Oxidation of Silicon) 공정을 이용하여 형성하였으며, 이 공정은 간단하고 재현성이 우수하여 많은 반도체 소자 제조에 사용되었다.The device isolation layer of the conventional semiconductor device is formed by using a local oxide of silicon (SiO) process to form a device isolation layer by selectively thermally oxidizing a substrate using a silicon nitride film (Si 3 N 4 ), and this process is simple. It has been used in the manufacture of many semiconductor devices because of its excellent reproducibility.
그러나, 반도체 소자가 점차로 고집적화 되면서 로코스 공정으로 소자분리 영역을 형성할 경우, 활성 영역의 면적이 축소되는 버드 비크 (bird beak)와 같은 현상이 발생되어 64MB 급 이상의 DRAM 소자에서 사용하기에는 적합하지 않게 되었다.However, when semiconductor devices are gradually integrated and forming device isolation regions by the LOCOS process, a phenomenon such as bird beak occurs in which the area of active regions is reduced, which makes them unsuitable for use in DRAM devices larger than 64MB. It became.
상기 버드 비크를 해결하기 위한 방법으로 제시된 것이 STI 공정으로, 반도체 기판 (10)상에 패드 산화막 (12)과 질화막 (14)을 차례로 형성한 후, 소자분리마스크와 에칭 단계로 반도체 기판의 소자분리 영역을 노출시키고, 트랜치 (16)를 형성한 다음, 기판 전면에 고밀도 플라즈마 방식 (High Density Plasma: 이하 "HDP"라 칭함)의 화학 기상 증착법(Chemical Vapor Deposition; 이하 "CVD"라 칭함)으로 매립 산화막 (18)을 형성하는 단계를 거친다(도 1참조). 그 후 질화막을 연마 방지막으로 일반적인 슬러리를 사용하여 매립 산화막 (18)을 CMP 공정으로 연마하면, 상기 매립 산화막 (18)은 트랜치 (16)에만 남아 소자 분리막을 형성한다.A method for solving the bird beak is proposed by the STI process, the pad oxide film 12 and the nitride film 14 are sequentially formed on the semiconductor substrate 10, and then the device isolation mask and the etching step are used to separate the devices of the semiconductor substrate. The area is exposed, the trench 16 is formed, and then buried in the entire surface of the substrate by Chemical Vapor Deposition (hereinafter referred to as "CVD") of High Density Plasma (hereinafter referred to as "HDP"). The oxide film 18 is formed (see FIG. 1). After that, when the nitride film is polished using a general slurry as the anti-polishing film, the buried oxide film 18 is polished by the CMP process, and the buried oxide film 18 remains only in the trench 16 to form an element isolation film.
그러나, 상기와 같은 CMP 공정의 일반적인 CMP용 슬러리는 질화막에 비하여 산화막이 2배 이상 빠르게 연마되므로, 질화막의 연마율보다 매립 산화막의 연마 속도가 빨라, 트랜치 내에 존재하는 매립 산화막 (18)의 중앙부분이 들어가는 디싱 (dishing)현상 (20)이 심하게 발생되는 단점이 있다(도 2참조).However, in the CMP slurry of the above-described CMP process, since the oxide film is polished more than twice as fast as the nitride film, the polishing rate of the buried oxide film is faster than that of the nitride film, and the central portion of the buried oxide film 18 present in the trench is faster. There is a disadvantage that this dishing (20) is severely generated (see Fig. 2).
이런, 디싱 현상의 발생은 후속 포토리소그래피 또는 식각 공정에 좋지 않은 영향을 주며, 평탄화 특성 및 소자 분리막으로서의 신뢰성이 저하되고, 중합 잔여물로 인하여 후속 게이트 형성 공정에서 전기적 특성을 악화시킨다.Such occurrence of dishing adversely affects subsequent photolithography or etching processes, degrades planarization characteristics and reliability as device isolation films, and deteriorates electrical characteristics in subsequent gate forming processes due to polymerization residues.
이에 본 발명자들은 상기와 같은 소자 분리막의 CMP 공정 시 발생하는 소자 분리막의 디싱 문제를 극복하기 위한 연구를 하던 중 종래의 단점들을 극복하는 새로운 개념의 반도체 소자의 소자 분리 방법을 알아내어 본 발명을 완성하였다.Therefore, the present inventors completed the present invention by finding a device isolation method of a semiconductor device of a new concept overcoming the disadvantages of the prior art while researching to overcome the dishing problem of the device isolation film generated during the CMP process of the device isolation film as described above. It was.
본 발명의 목적은 상기와 같은 종래의 문제점을 해결한 반도체 소자의 소자분리 방법에 관한 것으로, 보다 상세하게는 역 선택비 슬러리를 이용한 STI CMP 공정을 연속적으로 실시하여 디싱 현상을 방지하는 소자분리 방법이다.An object of the present invention relates to a device isolation method of a semiconductor device that solves the conventional problems as described above, more specifically, a device isolation method for preventing dishing phenomenon by continuously performing the STI CMP process using a reverse selectivity slurry to be.
도 1 및 도 2는 종래 기술에 따른 반도체 소자의 분리막 제조 공정도.1 and 2 are a manufacturing process of the separator of the semiconductor device according to the prior art.
도 3 및 도 4는 본 발명에 따른 반도체 소자의 분리막 제조 공정도.3 and 4 are a manufacturing process of the separator of the semiconductor device according to the invention.
(도면의 주요 부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)
10 : Si 기판12 : 패드 산화막10 Si substrate 12 pad oxide film
14 : 질화막 16 : 트랜치14 nitride layer 16 trench
18 : 매립 산화막 (Cap-fill oxide)20 : 디싱 (dishing)18: Cap-fill oxide 20: dishing
본 발명은 소자 분리막의 CMP 공정 시 발생하는 소자 분리막의 디싱 문제를 해결하기 위하여,The present invention, in order to solve the dishing problem of the device isolation film generated during the CMP process of the device isolation film,
a. 반도체 기판 (10) 상에 패드 산화막 (12)과 질화막 (14)을 차례로 형성하는 단계;a. Sequentially forming a pad oxide film 12 and a nitride film 14 on the semiconductor substrate 10;
b. 소자 분리 영역으로 예정된 부위에 트랜치 (16)를 형성하는 단계;b. Forming a trench 16 in a region destined for the device isolation region;
c. 상기 결과물 전면에 매립 산화막 (18)을 형성하는 단계;c. Forming a buried oxide film (18) on the entire surface of the resultant product;
d. (질화막/산화막)<1의 식각 선택비를 갖는 제 1 슬러리를 이용하여 1차 CMP 공정을 실시하는 단계; 및d. Performing a first CMP process using a first slurry having an etching selectivity of (nitride film / oxide film) <1; And
e. (질화막/산화막)>1의 식각 선택비를 갖는 제 2 슬러리를 이용하여 2차 CMP 공정을 실시하는 단계를 포함한다.e. Performing a second CMP process using a second slurry having an etching selectivity of (nitride film / oxide film)> 1.
이하 첨부한 도면을 참조하여 본 발명을 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
본 발명은 도면 1에서와 같이 실리콘 기판 (10) 상에 패드 산화막 (12)을 증착 한 후, 그 상부에 500∼3000Å 두께로 질화막 (14)을 형성 하였다. 상기 질화막은 실리콘 질화막 (SiN); 1∼2 wt%의 실리콘 (Si)이 함유된 산화질화막 (SiON); 또는 3∼30 wt%, 더욱 바람직하게는 3∼10 wt%의 실리콘 (Si)이 함유된 과산화질화막으로 형성 할 수 있다.In the present invention, after depositing the pad oxide film 12 on the silicon substrate 10 as shown in FIG. The nitride film is a silicon nitride film (SiN); 1-2 wt% Oxynitride film (SiON) containing silicon (Si); Or 3 to 30 wt%, more preferably 3-10 wt% It can be formed from a peroxide nitride film containing silicon (Si).
그 후 소자분리 마스크를 이용한 에칭 공정으로 반도체 기판의 소자 분리 영역을 노출시키고, 트랜치 (16)를 형성한 후, 기판 전면에 CVD 방법을 이용하여 매립 산화막 (18)을 형성한다. 상기 매립 산화막 (18)은 HDP 산화막, 피.이-테오스(plazma enhanced tetraethyl-o-silicate glass; 이하 "PE-TEOS"라 칭함), 오존-테오스 (O3-tetraethyl-o-silicate glass; 이하 "(O3-TEOS"라 칭함) 및 비.피.에스.지. (borophosphosilicate glass; 이하 "BPSG"라 칭함)를 이용할 수 있으며, 약 4000∼8000Å의 두께로 증착하는 것이 바람직하다(도 1 참조).Thereafter, the isolation region of the semiconductor substrate is exposed by the etching process using the isolation mask, the trench 16 is formed, and the buried oxide film 18 is formed on the entire surface of the substrate by the CVD method. The buried oxide film 18 may include an HDP oxide film, plasma enhanced tetraethyl-o-silicate glass (hereinafter referred to as "PE-TEOS"), and ozone-theos (O 3 -tetraethyl-o-silicate glass). Hereinafter referred to as "(O 3 -TEOS") and B.P.G. (borophosphosilicate glass; hereinafter referred to as "BPSG"), which is preferably deposited at a thickness of about 4000 to 8000 kPa ( See FIG. 1).
그 후, 도 3에서와 같이 질화막을 연마 방지막으로 하여 질화막에 대한 산화막의 식각 선택비가 우수한 제 1 슬러리를 사용하여 질화막이 노출될 때까지 1차 CMP 공정을 실시하여 매립 산화막 (18)이 질화막 (14)보다 빨리 연마되도록 하였다(도 3 참조).Thereafter, as shown in FIG. 3, the first oxide CMP process is performed using a first slurry having an excellent etching selectivity of the oxide film with respect to the nitride film with the nitride film as the anti-polishing film until the nitride film is exposed, thereby filling the buried oxide film 18 with the nitride film ( The grinding was carried out earlier than 14) (see FIG. 3).
상기 1차 CMP 공정에 사용한 제 1 슬러리는 통상의 산화막 식각용 슬러리로써, (질화막/산화막)<1의 식각 선택비를 가지며, 보다 바람직하게는 질화막:산화막= 1: 2∼4의 선택비를 가진다.The first slurry used in the first CMP process is a conventional oxide film etching slurry, (Nitride film / oxide film) has an etching selectivity of <1, more preferably nitride film: oxide film = 1: 2 to 4.
제 1 슬러리는 실리카 또는 알루미나 연마제가 첨가된 통상의 슬러리, 예를 들면 Cabot사 SS25, Rodel사 ILD1200, 환화 슬러리 및 동진 슬러리 등을 사용할 수 있으며, 입자 크기는 50∼300nm가 바람직하며, pH는 8∼11 이다.The first slurry may be a conventional slurry to which silica or alumina abrasive is added, such as Cabot SS25, Rodel ILD1200, cyclized slurry, and copper slurry, and the particle size is preferably 50 to 300 nm, and the pH is 8 It is -11.
이어서, 다음 도 4에서 보여지는 것과 같이 산화막에 대한 질화막의 식각 선택비가 우수한 역 선택비를 갖는 제 2 슬러리를 사용하여 2차 CMP 공정을 실시하면, 질화막 (14)이 연마되면서 평탄화가 이루어진다(도 4참조). Subsequently, when the second CMP process is performed using a second slurry having an inverse selectivity ratio in which the etching selectivity of the nitride film to the oxide film is excellent as shown in FIG. 4, the nitride film 14 is polished and planarized (FIG. 4) .
상기에서 사용하는 제 2 슬러리는 질화막 식각용 슬러리로써, (질화막/산화막)>1의 식각 선택비를 가지며, 바람직하게는 질화막:산화막=1.5∼50 : 1, 보다 바람직하게는 1.5∼10 : 1의 선택비를 가진다.The second slurry used above is a nitride film etching slurry, and has an etching selectivity of (nitride film / oxide film)> 1, preferably Nitride film: oxide film = 1.5-50: 1, More preferably, it has a selection ratio of 1.5-10: 1.
또한, 제 2 슬러리는 산화 세륨(CeO2) 연마제가 첨가된 것 이나 산화망간 (MnO2), 지르코니아 (ZrO2) 또는 알루미나 (Al2O3)로 이루어진 연마제를 사용할 수 있다. 상기 연마제의 입자 크기는 100nm∼500nm가 바람직하며 슬러리 총 중량에 대해 0.1∼20 wt%를 포함한다.In addition, the second slurry may be prepared by adding a cerium oxide (CeO 2 ) abrasive or an abrasive made of manganese oxide (MnO 2 ), zirconia (ZrO 2 ) or alumina (Al 2 O 3 ). The particle size of the abrasive is preferably 100 nm to 500 nm and comprises 0.1 to 20 wt% based on the total weight of the slurry.
상기 제 2 슬러리의 제조 방법을 예를 들면, 5 wt%의 산화세슘 (CeO2) 연마제가 포함된 HS-8005-A9 (히타치사) CMP용 슬러리에 탈이온수를 첨가하여 희석시켜 슬러리 총 중량에 대하여 산화세슘이 1 wt% 인 CMP용 슬러리 10L를 제조하고, 여기에 인산을 첨가하여 pH가 (1-5) 이 되도록 하여 제 2 슬러리 조성물을 얻었다.For example, a method of preparing the second slurry may be diluted by adding deionized water to a slurry for HS-8005-A9 (Hitachi Co., Ltd.) CMP containing 5 wt% of cesium oxide (CeO 2 ) abrasive. 10 L of CMP slurry having 1 wt% cesium oxide was prepared, and phosphoric acid was added thereto to obtain a pH of (1-5) to obtain a second slurry composition.
또한, 역 선택비 즉, 산화막에 비해 질화막이 빠른 식각 속도를 갖도록 하기 위하여 슬러리에 인산 (H3PO4), 질산 (HNO3) 및 불산 (HF)을 첨가하여, 연마제의 pH가 1∼5, 바람직하게는 pH 1∼3 이 되도록 하는 것이 바람직하다.In addition, in order to make the nitride film have a faster etching rate than the oxide film, phosphoric acid (H 3 PO 4 ), nitric acid (HNO 3 ), and hydrofluoric acid (HF) are added to the slurry so that the pH of the abrasive is 1-5. It is preferable to make it pH 1-3 preferably.
이상에서 살펴본 바와 같이, 본 발명은 반도체 제조 공정 중 STI CMP 공정을 실시하는 과정에서 서로 다른 선택비를 가지는 슬러리를 이용하여 연속적으로 실시하는 소자분리 방법을 추가함으로써 필드 부위에 발생하는 디싱 현상을 방지하고, 디싱으로 인한 소자의 손상을 방지하며, 미세 기술 특히, 0.18㎛ 테크놀로지 이하 디바이스에서 반도체 소자분리 방법을 제공한다.As described above, the present invention prevents dishing from occurring in the field by adding a device isolation method that is continuously performed using slurries having different selection ratios during the STI CMP process in the semiconductor manufacturing process. In addition, to prevent damage to the device due to dishing, and to provide a semiconductor device isolation method in a micro technology, in particular devices less than 0.18㎛ technology.
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