KR20030010893A - Photosensitive resin composition - Google Patents

Photosensitive resin composition Download PDF

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KR20030010893A
KR20030010893A KR1020010045551A KR20010045551A KR20030010893A KR 20030010893 A KR20030010893 A KR 20030010893A KR 1020010045551 A KR1020010045551 A KR 1020010045551A KR 20010045551 A KR20010045551 A KR 20010045551A KR 20030010893 A KR20030010893 A KR 20030010893A
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weight
acrylate
resin composition
acid
photosensitive resin
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KR1020010045551A
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KR100737723B1 (en
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박수정
권경일
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주식회사 동진쎄미켐
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)

Abstract

PURPOSE: Provided is a photosensitive resin composition for photoresist, which is excellent in sensitivity, insulating property, leveling property, and chemical-resistance and can be used as an intercalation insulating membrane in an LCD producing process. CONSTITUTION: The photosensitive resin composition contains: 100pts.wt. of an acryl-based copolymer obtained by copolymerizing 5-40wt% of unsaturated carboxylic acid, unsaturated carboxylic anhydride, or a mixture thereof, 10-70wt% of an unsaturated compound containing epoxy, and 10-70wt% of an olefin-based unsaturated compound, wherein the acryl-based copolymer has a polystyrene reduced weight average molecular weight(Maw) of 5000-30000; 5-100pts.wt. of a 1,2-quinonediazide compound; 1-50pts.wt. of an acrylate compound represented by the formula 1. In the formula, R is hydrogen atom or C1-C6 alkyl, alkoxy, or alkanoyl and 1<a<6, and a+b is 6.

Description

감광성 수지 조성물{PHOTOSENSITIVE RESIN COMPOSITION}Photosensitive resin composition {PHOTOSENSITIVE RESIN COMPOSITION}

[산업상 이용 분야][Industrial use]

본 발명은 LCD 제조공정에서 포토레지스트로 사용되는 감광성 수지 조성물에 관한 것으로, 더욱 상세하게는 에틸렌성 불포화 2중 결합을 갖는 아크릴레이트계 공중합체를 포함하여 절연성, 평탄성, 내약품성 등의 여러 가지 성능이 뛰어나며, 패턴 형성이 용이하고 투과율이 우수하여 액정표시소자, 집적회로소자 등의 층간절연막을 형성하기에 적합한 감광성 수지 조성물에 관한 것이다.The present invention relates to a photosensitive resin composition used as a photoresist in the LCD manufacturing process, and more particularly, including an acrylate copolymer having an ethylenically unsaturated double bond, various performances such as insulation, flatness, chemical resistance The present invention relates to a photosensitive resin composition which is excellent in formation, easy in pattern formation, and excellent in transmittance, and is suitable for forming interlayer insulating films such as liquid crystal display devices and integrated circuit devices.

[종래의 기술][Prior art]

TFT형 액정표시소자나 집적회로소자에는 층간에 배치되는 배선의 사이를 절연하기 위해서 층간절연막을 사용하고 있다.In the TFT type liquid crystal display device or integrated circuit device, an interlayer insulating film is used to insulate the wirings arranged between the layers.

이러한 층간절연막을 형성하는 경우에는, 필요로 하는 패턴(pattern) 형상의 층간절연막을 얻기 위한 공정수가 적고 평탄성이 우수한 감광성 재료가 사용되고 있다.In the case of forming such an interlayer insulating film, a photosensitive material having a small number of steps and excellent flatness is used to obtain a pattern-shaped interlayer insulating film.

또한, 액정 디스플레이(LCD)의 표시 품위 향상에 따라 TFT형 액정표시소자 구조도 변화하여 층간절연막의 막두께를 두껍게 하여 평탄성을 높여 사용하는 경우가 증가하고 있다.In addition, as the display quality of the liquid crystal display (LCD) is improved, the structure of the TFT type liquid crystal display device is also changed, and the thickness of the interlayer insulating film is increased to increase the flatness.

그러나, 상기와 같이 층간절연막용 감광성 수지 조성물의 두께가 두꺼운 조건으로 사용한 경우, 막 두께 증가에 따르는 투명성의 저하가 문제가 되었다.However, when the thickness of the photosensitive resin composition for interlayer insulation films was used on condition that is thick as mentioned above, the fall of transparency by the increase of film thickness became a problem.

따라서, 본 발명은 상기와 같은 종래 기술의 문제점을 고려하여, 절연성, 평탄성, 내약품성 등의 여러 가지 성능이 뛰어나며 층간절연막으로서 패턴(pattern) 형성이 용이한 감광성 수지 조성물을 제공하는 것을 목적으로 한다.Accordingly, an object of the present invention is to provide a photosensitive resin composition which is excellent in various performances such as insulation, flatness, chemical resistance and the like and easily forms a pattern as an interlayer insulating film in view of the problems of the prior art as described above. .

본 발명의 다른 목적은 두꺼운 막에 있어서도 투과율이 우수하여 LCD 제조 공정의 층간 절연막으로 사용하기 적합한 감광성 수지 조성물을 제공하는 것이다.Another object of the present invention is to provide a photosensitive resin composition which is excellent in transmittance even in a thick film and suitable for use as an interlayer insulating film in an LCD manufacturing process.

[과제를 해결하기 위한 수단][Means for solving the problem]

상기 목적을 달성하기 위하여, 본 발명은In order to achieve the above object, the present invention

감광성 수지 조성물에 있어서, (A) ⅰ) 불포화 카르본산, 불포화 카르본산 무수물, 또는 이들의 혼합물; ⅱ) 에폭시기 함유 불포화화합물; 및 ⅲ) 올레핀계 불포화 화합물을 공중합시켜 얻어진 아크릴계 공중합체; (B) 1,2-퀴논디아지드 화합물; 및 (C) 하기 화학식 1로 표시되는 아크릴레이트 화합물을 포함하는 감광성 수지 조성물을 제공한다:In the photosensitive resin composition, (A) i) unsaturated carboxylic acid, unsaturated carboxylic anhydride, or a mixture thereof; Ii) epoxy group-containing unsaturated compounds; And iii) an acrylic copolymer obtained by copolymerizing an olefinically unsaturated compound; (B) 1,2-quinonediazide compounds; And (C) provides a photosensitive resin composition comprising an acrylate compound represented by the formula (1):

[화학식 1][Formula 1]

상기 화학식 1에서,In Chemical Formula 1,

R은 수소원자, 또는 C1∼C5의 알킬기, 알콕시기, 또는 알카노일기이며; 및R is a hydrogen atom or a C 1 -C 5 alkyl group, an alkoxy group, or an alkanoyl group; And

1< a <6 이고, a + b = 6이다.1 <a <6 and a + b = 6.

바람직하게 본 발명은Preferably the present invention

(A)ⅰ) 불포화 카르본산, 불포화 카르본산 무수물, 또는 이들의 혼합물 5 내(A) iii) unsaturated carboxylic acid, unsaturated carboxylic anhydride, or mixtures thereof 5

지 40 중량%;40% by weight;

ⅱ) 에폭시기 함유 불포화화합물 10 내지 70 중량%; 및Ii) 10 to 70% by weight of an epoxy group-containing unsaturated compound; And

ⅲ) 올레핀계 불포화 화합물 10 내지 70 중량%V) 10 to 70% by weight of olefinically unsaturated compound

를 공중합시켜 얻어진 아크릴계 공중합체 100 중량부;100 parts by weight of an acrylic copolymer obtained by copolymerizing;

(B) 1,2-퀴논디아지드 화합물 5 내지 100 중량부; 및(B) 5 to 100 parts by weight of the 1,2-quinonediazide compound; And

(C) 상기 화학식 1로 표시되는 아크릴레이트 화합물 1 내지 50 중량부(C) 1 to 50 parts by weight of the acrylate compound represented by Formula 1

를 포함하는 감광성 수지 조성물을 제공한다.It provides a photosensitive resin composition comprising a.

이하에서 본 발명을 상세하게 설명한다.Hereinafter, the present invention will be described in detail.

(A) 아크릴계 공중합체(A) Acrylic Copolymer

본 발명의 감광성 수지 조성물에 있어서, (A) 아크릴계 공중합체는 현상할때에 스컴이 발생하지 않는 소정의 패턴을 용이하게 형성할 수 있도록 하는 역할을 한다.In the photosensitive resin composition of the present invention, the (A) acrylic copolymer serves to easily form a predetermined pattern in which scum does not occur during development.

이러한 상기 (A) 아크릴계 공중합체는 ⅰ) 불포화 카르본산, 불포화 카르본산 무수물, 또는 이들의 혼합물; ⅱ) 에폭시기 함유 불포화화합물; 및 ⅲ) 올레핀계 불포화 화합물을 단량체로 하여 용매 및 중합개시제의 존재하에서 라디칼 반응으로 얻을 수 있다. 이를 보다 구체적으로 설명하면 다음과 같다.Such (A) acrylic copolymers may be selected from the group consisting of: i) unsaturated carboxylic acids, unsaturated carboxylic anhydrides, or mixtures thereof; Ii) epoxy group-containing unsaturated compounds; And iii) a radical reaction in the presence of a solvent and a polymerization initiator using the olefinically unsaturated compound as a monomer. This will be described in more detail as follows.

본 발명에서 공중합시 사용되는 ⅰ) 불포화 카르본산, 불포화 카르본산 무수물 또는 이들의 혼합물의 사용량은 전체 총 단량체에 대하여 바람직하게는 5 ∼ 40 중량%인 것이 바람직하며, 더욱 바람직하게는 10 ∼ 30 중량%로 사용하는 것이 좋다. 상기 단량체의 사용량이 5 중량% 미만인 경우 알칼리 수용액에 용해하기 어렵게 되고, 반면 40 중량%를 초과하는 경우 알칼리수 용액에 대한 용해성이 지나치게 커지는 경향에 있다.I) Unsaturated carboxylic acid, unsaturated carboxylic anhydride or mixtures thereof used in copolymerization in the present invention is preferably 5 to 40% by weight, more preferably 10 to 30% by weight based on the total monomers. Good to use in%. When the amount of the monomer used is less than 5% by weight, it is difficult to dissolve in the aqueous alkali solution, whereas when it exceeds 40% by weight, the solubility in the alkaline water solution tends to be too large.

상기 ⅰ)화합물의 구체적 예는 아크릴산, 메타크릴산 등의 불포화 모노 카르본산, 말레인산, 푸마르산, 시트라콘산, 메사콘산, 이타콘산 등의 불포화 디카르본산 및 이들 불포화 디카르본산의 무수물 등이 있으며, 이들을 단독 또는 2종 이상 혼합하여 사용할 수 있다. 이들 중에서 바람직하게는 아크릴산, 메타크릴산, 또는 무수말레인산을 사용하는 것이 공중합 반응성과 알칼리 수용액에 대한 용해성이 우수하다.Specific examples of the compound (iii) include unsaturated monocarboxylic acids such as acrylic acid and methacrylic acid, maleic acid, fumaric acid, citraconic acid, unsaturated dicarboxylic acids such as mesaconic acid and itaconic acid, and anhydrides of these unsaturated dicarboxylic acids. These can be used individually or in mixture of 2 or more types. Of these, acrylic acid, methacrylic acid, or maleic anhydride is preferably used, which is excellent in copolymerization reactivity and solubility in aqueous alkali solution.

또한, 본 발명에서 공중합시 사용되는 ⅱ) 에폭시기 함유 불포화 화합물의 사용량은 전체 총 단량체에 대하여 10 ∼ 70 중량%로 사용하는 것이 바람직하며,더욱 바람직하게는 20 ∼ 60 중량%로 사용하는 것이 좋다. 상기 에폭시 함유 불포화 화합물의 사용량이 10 중량% 미만인 경우는 얻어지는 패턴의 내열성이 저하하는 경향에 있으며, 70 중량%를 초과하는 경우는 공중합체의 보존안정성이 저하하는 경향에 있다.In addition, the amount of the ii) epoxy group-containing unsaturated compound used for copolymerization in the present invention is preferably used in an amount of 10 to 70% by weight based on the total total monomers, and more preferably in an amount of 20 to 60% by weight. When the usage-amount of the said epoxy containing unsaturated compound is less than 10 weight%, the heat resistance of the pattern obtained tends to fall, and when it exceeds 70 weight%, the storage stability of a copolymer tends to fall.

상기 에폭시 함유 불포화 화합물로는 아크릴산 글리시딜, 메타크릴산 글리시딜, α-에틸 아크릴산 글리시딜, α-n-프로필아크릴산 글리시딜, α-n-부틸아크릴산 글리시딜, 아크릴산-β-메틸글리시딜, 메타크릴산-β-메틸글리시딜, 아크릴산-β-에틸글리시딜, 메타크릴산-β-에틸글리시딜, 아크릴산-3,4-에폭시부틸, 메타크릴산-3,4-에폭시부틸, 아크릴산-6,7-에폭시헵틸, 메타크릴산-6,7-에폭시헵틸, α-에틸 아크릴산-6,7-에폭시헵틸, o-비닐벤질 글리시딜 에테르, m-비닐벤질 글리시딜 에테르, p-비닐벤질 글리시딜 에테르 등이 있으며, 이들을 단독 또는 2 종 이상 혼합하여 사용할 수 있다. 바람직하게는 메타크릴산 글리시딜, 메타크릴산-β-메틸글리시딜, 메타크릴산-6,7-에폭시헵틸, o-비닐벤질 글리시딜 에테르, m-비닐벤질 글리시딜 에테르, p-비닐벤질 글리시딜 에테르 등을 사용하는 것이 공중합 반응성 및 얻어진 패턴의 내열성을 높이는 점에서 좋다.Examples of the epoxy-containing unsaturated compound include glycidyl acrylate, glycidyl methacrylate, glycidyl α-ethyl acrylate, glycidyl α-n-propyl acrylate, glycidyl α-n-butyl acrylate, acrylic acid β- -Methylglycidyl, methacrylic acid-beta -methylglycidyl, acrylic acid-beta -ethylglycidyl, methacrylic acid-beta -ethylglycidyl, acrylic acid -3,4-epoxybutyl, methacrylic acid- 3,4-epoxybutyl, acrylic acid-6,7-epoxyheptyl, methacrylic acid-6,7-epoxyheptyl, α-ethyl acrylic acid-6,7-epoxyheptyl, o-vinylbenzyl glycidyl ether, m- Vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, and the like, and these may be used alone or in combination of two or more thereof. Preferably methacrylic acid glycidyl, methacrylic acid-β-methylglycidyl, methacrylic acid-6,7-epoxyheptyl, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, It is preferable to use p-vinylbenzyl glycidyl ether or the like in terms of enhancing copolymerization reactivity and heat resistance of the obtained pattern.

또한, 본 발명에서 공중합시 사용되는 ⅲ) 올레핀계 불포화 화합물의 사용량은 전체 총 단량체에 대하여 바람직하게는 10 ∼ 70 중량%이 좋으며, 더욱 바람직하게는 20 ∼ 50 중량%로 사용하는 것이 좋다. 상기 올레핀계 불포화 화합물의 사용량이 10 중량% 미만인 경우는 아크릴계 공중합체의 보존안정성이 저하하는 경향이 있고, 70 중량%를 초과하는 경우는 아클리계 공중합체가 알칼리 수용액에 용해하기 어렵게 된다.Further, the amount of i) olefinically unsaturated compound used in the copolymerization in the present invention is preferably 10 to 70% by weight, more preferably 20 to 50% by weight, based on the total total monomers. When the amount of the olefinically unsaturated compound used is less than 10% by weight, the storage stability of the acrylic copolymer tends to be lowered. When the amount of the olefinically unsaturated compound is greater than 70% by weight, the acrylate copolymer becomes difficult to dissolve in the aqueous alkali solution.

상기 올레핀계 불포화 화합물의 구체적 예를 들면 메틸메타크릴레이트, 에틸메타크릴레이트, n-부틸 메타크릴레이트, sec-부틸메타크릴레이트, t-부틸 메타크릴레이트, 메틸아크릴레이트, 이소프로필 아크릴레이트, 시클로헥실 메타크릴레이트, 2-메틸시클로 헥실메타크릴레이트, 디시클로펜타닐옥시에틸메타크릴레이트, 이소보로닐메타크릴레이트, 시클로헥실아크릴레이트, 2-메틸시클로헥실아크릴레이트, 디시클로펜타닐옥시에틸아크릴레이트, 이소보로닐아크릴레이트, 페닐메타크릴레이트, 페닐아크릴레이트, 벤질아크릴레이트, 2-히드록시에틸메타크릴레이트, 스타이렌, α-메틸 스타이렌, m-메틸 스타이렌, p-메틸 스타이렌, 비닐톨루엔, p-메틸 스타이렌, 1,3-부타디엔, 이소프렌, 2,3-디메틸 1,3-부타디엔 등이 있으며, 이들을 단독 또는 2 종 이상 혼합하여 사용할 수 있다. 바람직하게는 스타이렌, 디시클로펜타닐 메타크릴레이트, 또는 p-메톡시스타이렌이 공중합 반응성 및 알칼리 수용액에 대한 용해성 측면에서 유리하다.Specific examples of the olefinically unsaturated compound include methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate, t-butyl methacrylate, methyl acrylate, isopropyl acrylate, Cyclohexyl methacrylate, 2-methylcyclohexyl methacrylate, dicyclopentanyloxyethyl methacrylate, isobornyl methacrylate, cyclohexyl acrylate, 2-methylcyclohexyl acrylate, dicyclopentanyloxyethyl Acrylate, isoboroyl acrylate, phenyl methacrylate, phenyl acrylate, benzyl acrylate, 2-hydroxyethyl methacrylate, styrene, α-methyl styrene, m-methyl styrene, p-methyl Styrene, vinyltoluene, p-methyl styrene, 1,3-butadiene, isoprene, 2,3-dimethyl 1,3-butadiene, and the like, alone or in combination of two or more thereof. It can be used in combination. Preferably styrene, dicyclopentanyl methacrylate, or p-methoxystyrene is advantageous in terms of copolymerization reactivity and solubility in aqueous alkali solution.

상기 아크릴계 공중합체의 중합에 사용되는 용매의 구체적 예를 들면 메탄올, 테트라히드로퓨란, 에틸렌글리콜 모노메틸에테르, 에틸렌글리콜 모노에틸에테르, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 디에틸렌글리콜 모노메틸에테르, 디에틸렌글리콜 모노에틸에테르, 에틸렌글리콜 디메틸에테르, 에틸렌글리콜 디에틸에테르, 에틸렌글리콜 메틸에틸에테르, 프로필렌글리콜 모노에틸에테르, 프로필렌글리콜 모노에틸에테르, 프로필렌글리콜 프로필에테르, 프로필렌글리콜 부틸에테르, 프로필렌글리콜 메틸에틸아세테이트, 프로필렌글리콜 에틸에테르아세테이트, 프로필렌글리콜 프로필에테르아세테이트, 프로필렌글리콜 부틸에테르아세테이트, 프로필렌글리콜 메틸에틸프로피오네이트, 프로필렌글리콜 에틸에테르프로피오네이트, 프로필렌글리콜 프로필에테르프로피오네이트, 프로필렌글리콜 부틸에테르프로피오네이트, 톨루엔, 크실렌, 메틸에틸케톤, 시클로헥사논, 4-히드록시 4-메틸 2-펜타논, 초산메틸, 초산에틸, 초산 프로필, 초산부틸, 2-히드록시 프로피온산에틸, 2-히드록시 2-메틸 프로피온산메틸, 2- 히드록시 2-메틸 프로피온산에틸, 히드록시 초산메틸, 히드록시 초산에틸, 히드록시 초산부틸, 유산메틸, 유산에틸, 유산 프로필, 유산 부틸, 3-히드록시 프로피온산메틸, 3-히드록시 프로피온산에틸, 3-히드록시 프로피온산 프로필, 3-히드록시 프로피온산 부틸, 2-히드록시 3-메틸 부탄산메틸, 메톡시초산메틸, 메톡시초산에틸, 메톡시초산 프로필, 메톡시초산 부틸, 에톡시초산메틸, 에톡시초산에틸, 에톡시초산 프로필, 에톡시초산 부틸, 프로폭시초산 메틸, 프로폭시초산에틸, 프로폭시초산 프로필, 프로폭시초산 부틸, 부톡시초산 메틸, 부톡시초산에틸, 부톡시초산 프로필, 부톡시초산 부틸, 2-메톡시프로피온산 메틸, 2-메톡시프로피온산에틸, 2-메톡시프로피온산 프로필, 2-메톡시프로피온산 부틸, 2-에톡시프로피온산 메틸, 2-에톡시프로피온산에틸, 2-에톡시프로피온산 프로필, 2-에톡시프로피온산 부틸, 2-부톡시프로피온산 메틸, 2-부톡시프로피온산에틸, 2-부톡시프로피온산 프로필, 2-부톡시프로피온산 부틸, 3-메톡시프로피온산 메틸, 3-메톡시프로피온산에틸, 3-메톡시프로피온산 프로필, 3-메톡시프로피온산 부틸, 3-에톡시프로피온산 메틸, 3-에톡시프로피온산에틸, 3-에톡시프로피온산 프로필, 3-에톡시프로피온산 부틸, 3-프로폭시프로피온산 메틸, 3-프로폭시프로피온산에틸, 3-프로폭시프로피온산 프로필, 3-프로폭시프로피온산 부틸, 3-부톡시프로피온산 메틸, 3-부톡시프로피온산에틸, 3-부톡시프로피온산 프로필, 3-부톡시프로피온산 부틸 등의 에테르류 등이 있으며, 이들을 단독 또는 2 종 이상 혼합하여 사용할 수 있다.Specific examples of the solvent used for the polymerization of the acrylic copolymer include methanol, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl Ether, diethylene glycol monoethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methylethyl ether, propylene glycol monoethyl ether, propylene glycol monoethyl ether, propylene glycol propyl ether, propylene glycol butyl ether, propylene glycol Methyl ethyl acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, propylene glycol butyl ether acetate, propylene glycol methyl ethyl propionate, propylene glycol ethyl ether propionate, Propylene glycol propyl ether propionate, propylene glycol butyl ether propionate, toluene, xylene, methyl ethyl ketone, cyclohexanone, 4-hydroxy 4-methyl 2-pentanone, methyl acetate, ethyl acetate, propyl acetate, Butyl acetate, 2-hydroxy ethyl propionate, 2-hydroxy 2-methyl methyl propionate, 2-hydroxy 2-methyl ethyl propionate, hydroxy methyl acetate, hydroxy ethyl acetate, hydroxy butyl acetate, methyl lactate, ethyl lactate , Lactic acid propyl, butyl lactic acid, 3-hydroxy methyl propionate, 3-hydroxy ethyl propionate, 3-hydroxy propionic acid propyl, 3-hydroxy propionic acid butyl, 2-hydroxy 3-methyl butyrate, methyl methoxyacetate Ethyl methoxy acetate, propyl methoxy acetate, methoxy butyl acetate, ethoxy acetate, ethyl ethoxy acetate, ethoxy propyl acetate, butyl ethoxy acetate, methyl propoxy acetate, ethyl propoxy acetate, Propoxy acetate propyl, butyl propoxy acetate, methyl butoxy acetate, ethyl butoxy acetate, propyl butoxy acetate, butyl butoxy acetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, 2-methoxypropionic acid propyl Butyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, ethyl 2-butoxypropionate, 2-butoxypropionate propyl, 2-butoxypropionate butyl, 3-methoxypropionate methyl, 3-methoxypropionate propyl, 3-methoxypropionic acid propyl, 3-methoxypropionate butyl, 3-ethoxypropionate methyl, 3 Ethyl ethoxypropionate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, 3-propoxypropionic acid propyl, 3-propoxy Ethers such as butyl cionate, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate, and butyl 3-butoxypropionate, and the like, and these may be used alone or in combination of two or more thereof. .

상기 아크릴계 공중합체의 제조에 사용되는 중합개시제로는 라디칼 중합개시제를 사용하며, 구체적 예를 들면 2,2’-아조비스이소부티로니트릴, 2,2’-아조비스(2,4-디메틸발레로니트릴)), 2,2’-아조비스(4-메톡시 2,4-디메틸발레로니트릴), 1,1’-아조비스(시클로헥산-1-카르보니트릴), 디메틸 2,2’-아조비스이소부틸레이트 등을 사용할 수 있다.As the polymerization initiator used in the preparation of the acrylic copolymer, a radical polymerization initiator is used, and specific examples thereof include 2,2'-azobisisobutyronitrile and 2,2'-azobis (2,4-dimethylvalle. Ronitrile)), 2,2'-azobis (4-methoxy 2,4-dimethylvaleronitrile), 1,1'-azobis (cyclohexane-1-carbonitrile), Dimethyl 2,2'-azobisisobutylate and the like can be used.

본 발명에서 사용하는 (A) 아크릴계 공중합체는 폴리스타이렌 환산중량평균분자량(Mw)이 5000 ∼ 30,000인 것이 좋으며, 바람직하게는 5000 ∼ 20,000인 것이 더욱 좋다. 상기 Mw 가 5000 미만으로 얻어진 막의 경우 현상성, 잔막율 등이 저하하거나 패턴 형상, 내열성 등이 뒤떨어지는 경향이 있으며, Mw가 30,000을 초과하는 경우 감도가 저하되거나 패턴 형상이 뒤떨어지는 경향이 있다.It is preferable that the (A) acrylic copolymer used by this invention is 5000-30,000 in polystyrene conversion weight average molecular weight (Mw), Preferably it is more preferable that it is 5000-20,000. In the case of the film obtained with Mw less than 5000, developability, residual film ratio, etc. tend to be lowered, or the pattern shape, heat resistance, and the like tend to be inferior. When Mw exceeds 30,000, sensitivity tends to be lowered or the pattern shape is inferior.

(B) 1,2-퀴논디아지드 화합물(B) 1,2-quinonediazide compound

본 발명의 감광성 수지 조성물에 있어서, 감광성 화합물로 (B) 1,2-퀴논디아지드 화합물을 사용하는 것이 바람직하다.In the photosensitive resin composition of this invention, it is preferable to use (B) 1,2-quinonediazide compound as a photosensitive compound.

상기 1,2-퀴논디아지드 화합물의 구체적 예로는 1,2-퀴논디아지드 4-술폰산 에스테르, 1,2-퀴논디아지드 5-술폰산 에스테르, 1,2-퀴논디아지드 6-술폰산 에스테르 등이 있다.Specific examples of the 1,2-quinonediazide compound include 1,2-quinonediazide 4-sulfonic acid ester, 1,2-quinonediazide 5-sulfonic acid ester, 1,2-quinonediazide 6-sulfonic acid ester, and the like. have.

상기 퀴논디아지드 화합물은 나프토퀴논디아지드술폰산할로겐 화합물과 페놀 화합물을 약염기하에 반응시켜 얻어진다.The quinone diazide compound is obtained by reacting a naphthoquinone diazide sulfonic acid halogen compound and a phenol compound under a weak base.

상기 페놀 화합물의 구체적인 예로는 2,3,4-트리히드록시벤조페논, 2,4,6-트리히드록시벤조페논, 2,2' 또는 4,4'-테트라히드록시벤조페논, 2,3,4,3'-테트라히드록시벤조페논, 2,3,4,4'-테트라히드록시벤조페논, 2,3,4,2'-테트라히드록시 4'-메틸벤조페논, 2,3,4,4'-테트라히드록시 3'-메톡시벤조페논, 2,3,4,2' 또는 2,3,4,6'-펜타히드록시벤조페논, 2,4,6,3', 2,4,6,4' 또는 2,4,6,5'-헥사히드록시벤조페논, 3,4,5,3', 3,4,5,4' 또는 3,4,5,5'-헥사히드록시벤조페논, 비스(2,4-디히드록시페닐) 메탄, 비스(p- 히드록시페닐) 메탄, 트리(p-히드록시페닐) 메탄, 1,1,1-트리(p-히드록시페닐) 에탄, 비스(2,3,4- 트리히드록시페닐) 메탄, 2,2-비스(2,3,4-트리히드록시페닐) 프로판, 1,1,3-트리스 (2,5-디메틸 4-히드록시페닐)-3-페닐프로판, 4,4'-[1-[4-[1-[4-히드록시페닐]-1-메틸에틸]페닐]에틸리덴]비스페놀, 비스(2,5-디메틸 4-히드록시페닐)-2-히드록시페닐메탄 등이 있으며, 이들을 단독 또는 2 종 이상 혼합하여 사용할 수 있다.Specific examples of the phenolic compound include 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,2 'or 4,4'-tetrahydroxybenzophenone, 2,3 , 4,3'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,3,4,2'-tetrahydroxy 4'-methylbenzophenone, 2,3, 4,4'-tetrahydroxy 3'-methoxybenzophenone, 2,3,4,2 'or 2,3,4,6'-pentahydroxybenzophenone, 2,4,6,3', 2 , 4,6,4 'or 2,4,6,5'-hexahydroxybenzophenone, 3,4,5,3', 3,4,5,4 'or 3,4,5,5'- Hexahydroxybenzophenone, bis (2,4-dihydroxyphenyl) methane, bis (p-hydroxyphenyl) methane, tri (p-hydroxyphenyl) methane, 1,1,1-tri (p-hydroxy Hydroxyphenyl) ethane, bis (2,3,4-trihydroxyphenyl) methane, 2,2-bis (2,3,4-trihydroxyphenyl) propane, 1,1,3-tris (2,5 -Dimethyl 4-hydroxyphenyl) -3-phenylpropane, 4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol, bis ( 2,5- And the like, methyl 4-hydroxyphenyl) -2-hydroxyphenyl methane, it can be used as a mixture thereof alone or in combination.

상기 화합물의 합성시 에스테르화도는 50 ∼ 85%가 바람직하며, 에스테르화도가 50% 미만인 경우는 잔막율이 나빠지는 경향이 있으며, 85%를 초과하는 경우는 보관 안정성이 떨어지는 경향이 있을 수 있다.In the synthesis of the compound, the esterification degree is preferably 50 to 85%, and when the esterification degree is less than 50%, the residual film ratio tends to worsen, and when it exceeds 85%, storage stability may tend to be inferior.

상기 1,2-퀴논디아지드화합물의 사용량은 상기 (A)의 아크릴계 공중합체 100 중량부에 대하여 5 ∼ 100 중량부로 사용하는 것이 바람직하며, 보다 바람직하게는 10 ∼ 50 중량부로 사용한다. 상기 1,2-퀴논디아지드 화합물의 사용량이 5 중량부미만인 경우에는 노광부와 비노광부의 용해도의 차가 작아져 패턴 형성가 곤란하며, 100 중량부를 초과하는 경우에는 단시간의 빛의 조사할 때 미반응의 1,2-퀴논디아지드 화합물이 다량 잔존하여 알칼리 수용액에의 용해도가 지나치게 낮아져 현상이 어려워진다.The amount of the 1,2-quinone diazide compound used is preferably 5 to 100 parts by weight, more preferably 10 to 50 parts by weight based on 100 parts by weight of the acrylic copolymer of (A). If the amount of the 1,2-quinone diazide compound is less than 5 parts by weight, the difference in solubility between the exposed part and the non-exposed part is small, and thus, pattern formation is difficult. A large amount of the 1,2-quinonediazide compound of is left, solubility in an aqueous alkali solution becomes too low, making development difficult.

(C) 하기 화학식 1로 표시되는 아크릴레이트 화합물(C) an acrylate compound represented by the following formula (1)

특히, 본 발명의 감광성 수지 조성물에 있어서, 에틸렌성 불포화 2중 결합을 갖는 하기 화학식 1로 표시되는 아크릴레이트 화합물을 포함하여 감광성 수지 조성물로부터 얻어지는 패턴의 내열성, 투명성, 감도 등을 향상시킬 수 있다.In particular, in the photosensitive resin composition of this invention, the heat resistance, transparency, sensitivity, etc. of the pattern obtained from the photosensitive resin composition can be improved, including the acrylate compound represented by following formula (1) which has an ethylenically unsaturated double bond.

[화학식 1][Formula 1]

상기 화학식 1에서,In Chemical Formula 1,

R은 수소원자, 또는 C1∼C5의 알킬기, 알콕시기, 또는 알카노일기이며; 및R is a hydrogen atom or a C 1 -C 5 alkyl group, an alkoxy group, or an alkanoyl group; And

1< a <6 이고, a + b = 6이다.1 <a <6 and a + b = 6.

상기 화학식 1로 표시되는 아크릴레이트 화합물은 단독 또는 2 종 이상 혼합하여 사용할 수 있다.The acrylate compound represented by the formula (1) can be used alone or in combination of two or more.

또한, 본 발명은 상기 화학식 1의 아크릴레이트 화합물과 함께 다른 종류의 에틸렌성 불포화 2중 결합을 갖는 단관능 메타아크릴레이트, 2관능 메타아크릴레이트 또는 3관능 이상의 메타아크릴레이트를 혼합하여 사용할 수 있다. 상기 단관능 메타아크릴레이트, 2관능 메타아크릴레이트 또는 3관능 이상의 메타아크릴레이트의 예를 들면 2-히드록시에틸메타아크리레트, 이소보로닐메타아크리레트, 3-메톡시부틸메타아크리레트, 2-메타아크릴일옥시에틸2-히드록시프로필프타레트등의 단관능메타아크리레트, 에틸렌글리콜메타아크리레트, 1,6-헥산디올디메타아크리레트, 1,9-노난디올디메타아크리레트, 프로필렌글리콜메타아크리레트, 테트라에틸렌글리콜메타아크리레트, 비스페녹시에타놀플루오렌디아크리레트, 비스페녹시에타놀플루오렌디아크리레트등의 2관능 메타아크리레트, 트리메틸올프로판트리메타아크릴레이트와 같은 3관능 이상의 메타아크릴레이트 등이 있다.In addition, the present invention can be used in combination with the acrylate compound of the general formula (1), a monofunctional methacrylate having a different type of ethylenically unsaturated double bond, a bifunctional methacrylate or a trifunctional or higher methacrylate. Examples of the monofunctional methacrylate, bifunctional methacrylate or trifunctional or higher methacrylate include 2-hydroxyethyl methacrylate, isoboroyl methacrylate, and 3-methoxybutyl methacrylate. Monofunctional methacrylate, such as a ret, 2-methacrylyl oxyethyl 2-hydroxypropylphthalate, ethylene glycol methacrylate, 1, 6- hexanediol dimethacrylate, 1, 9- nonanedi Bifunctional metacrete such as old dimethacrylate, propylene glycol methacrylate, tetraethylene glycol methacrylate, bisphenoxyethanol fluorene dicrete, bisphenoxyethanol fluorene diacrete And trifunctional or higher methacrylates such as trimethylolpropane trimethacrylate.

상기 (C)의 화학식 1의 아크릴레이트 화합물의 사용량은 상기 (A) 아크릴계 공중합체 100 중량부에 대하여 1 내지 50 중량부, 더욱 바람직하게는 5 내지 30 중량부로 사용하는 것이 바람직하다.The amount of the acrylate compound represented by the formula (1) of (C) is preferably used in an amount of 1 to 50 parts by weight, more preferably 5 to 30 parts by weight, based on 100 parts by weight of the (A) acrylic copolymer.

이 밖에, 본 발명의 감광성 수지 조성물은 필요에 따라 (D) 에폭시수지, (E) 접착제 및 (F) 계면활성제를 더욱 포함할 수 있다.In addition, the photosensitive resin composition of this invention can further contain (D) epoxy resin, (E) adhesive agent, and (F) surfactant as needed.

상기 (D) 에폭시수지는 감광성 수지 조성물로부터 얻어지는 패턴의 내열성, 감도 등을 향상시킬 수 있다. 상기 에폭시수지의 구체적 예로는 비스페놀 A 형 에폭시수지, 페놀 노볼락형 에폭시수지, 크레졸 노볼락형 에폭시수지, 환상지방족 에폭시수지, 글리시딜 에스테르형 에폭시수지, 글리시딜 아민형 에폭시수지, 복소환식 에폭시수지, (A) 아크릴계 공중합체와는 다른 글리시딜 메타아크리레트를 (공)중합한 수지 등이 있다. 바람직하게는 비스페놀 A 형 에폭시수지, 크레졸 노볼락형 에폭시수지, 또는 글리시딜 에스테르형 에폭시수지를 사용하는 것이 좋다. 상기 에폭시수지의 사용량은 알칼리 가용성수지 100 중량부에 대하여 0.1 내지 30 중량부인 것이 바람직하며, 이때 그 사용량이 30 중량부를 초과하는 경우 알칼리 가용성 수지에 대한 상용성이 떨어져 충분한 도포성능을 얻을 수 없다.The epoxy resin (D) can improve the heat resistance, sensitivity and the like of the pattern obtained from the photosensitive resin composition. Specific examples of the epoxy resins include bisphenol A epoxy resins, phenol novolac epoxy resins, cresol novolac epoxy resins, cycloaliphatic epoxy resins, glycidyl ester epoxy resins, glycidyl amine epoxy resins, and heterocyclic compounds. And resins obtained by (co) polymerizing glycidyl methacrylate different from epoxy resins and (A) acrylic copolymers. Preferably, bisphenol A type epoxy resin, cresol novolac type epoxy resin, or glycidyl ester type epoxy resin is used. The amount of the epoxy resin is preferably 0.1 to 30 parts by weight based on 100 parts by weight of the alkali-soluble resin, and when the amount is more than 30 parts by weight, the compatibility with the alkali-soluble resin is poor and sufficient coating performance cannot be obtained.

상기 (E) 접착제는 기판과의 접착성을 향상시키기 위해서 사용하며, 아크릴계 공중합체 100 중량부에 대하여 0.1 내지 20 중량부로 사용할 수 있다. 이러한 접착제로는 카르복실기, 메타크릴기, 이소시아네이트기, 에폭시기 등의 반응성 치환기를 갖는 실란커플링제 등이 사용될 수 있다. 구체적 예로는 γ-메타아크릴옥시프로필트리메톡시실란, 비닐트리아세톡시실란, 비닐트리메톡시실란, γ-이소시아네이트프로필트리에톡시실란, γ-글리시독시프로필트리메톡시실란, β-(3,4-에폭시 시클로 헥실 에틸트리메톡시실란 등이 있다.The adhesive (E) is used to improve adhesion to the substrate, and may be used in an amount of 0.1 to 20 parts by weight based on 100 parts by weight of the acrylic copolymer. As such an adhesive, a silane coupling agent having a reactive substituent such as a carboxyl group, a methacryl group, an isocyanate group, an epoxy group, or the like may be used. Specific examples include γ-methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatepropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, and β- (3 , 4-epoxy cyclohexyl ethyltrimethoxysilane, and the like.

또한, 상기 (F) 계면활성제는 감광성 조성물의 도포성이나 현상성을 향상시키기 위해 사용한다. 이러한 계면 활성제로는 폴리옥시에틸렌옥틸페닐에테르, 폴리옥시에틸렌노닐페닐에테르, F171, F172, F173(상품명; 대일본잉크사), FC430, FC431(상품명: 수미또모트리엠사), KP341(상품명; 신월화학공업사) 등이 있다. 상기 계면 활성제의 사용량은 고형분 100 중량부에 대하여 0.0001 내지 2 중량부로 사용하는 것이 바람직하다.In addition, the said (F) surfactant is used in order to improve the applicability | paintability and developability of a photosensitive composition. Such surfactants include polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, F171, F172, F173 (trade name; Japan Nippon Ink Company), FC430, FC431 (trade name: Sumitomo Triem Co.), KP341 (trade name; Shinwol) Chemical industry). The amount of the surfactant is preferably used in 0.0001 to 2 parts by weight based on 100 parts by weight of the solid content.

한편, 본 발명은 상기 (A) 아크릴계 공중합체, (B) 1,2-퀴논디아지드 화합물, 및 (C) 상기 화학식 1의 아크릴레이트 화합물을 포함하고, 필요에 따라 (D) ∼ (F) 성분을 더욱 포함하는 감광성 수지 조성물에 용매를 첨가하여 감광성 수지 조성물 코팅 용액을 제공한다.On the other hand, the present invention includes the (A) acrylic copolymer, (B) 1,2-quinonediazide compound, and (C) the acrylate compound of the formula (1), if necessary (D) to (F) A solvent is added to the photosensitive resin composition which further contains a component, and provides the photosensitive resin composition coating solution.

이러한 본 발명의 감광성 수지 조성물 코팅용액의 고형분 농도는 30 ∼ 70 중량%인 것이 바람직하며, 이는 0.2 ㎛ 정도의 미리포아필터 등을 사용하여 여과한 뒤 사용한다.It is preferable that the solid content concentration of the photosensitive resin composition coating solution of this invention is 30 to 70 weight%, and this is used after filtering using a 0.2 micrometer pore filter.

상기 감광성 수지 조성물 코팅용액의 제조에 사용하는 용매로는 메탄올, 에탄올 등의 알코올류; 테트라히드로퓨란 등의 에테르류; 에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르 등의 글리콜에테르류; 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트 등의 에틸렌글리콜알킬에테르 아세테이트류; 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜디메틸에테르 등의 디에틸렌글리콜류; 프로필렌글리콜메틸에테르, 프로필렌글리콜에틸에테르, 프로필렌글리콜프로필에테르, 프로필렌글리콜부틸에테르 등의 프로필렌글리콜모노알킬에테르류; 프로필렌글리콜메틸에테르아세테이트, 프로필렌글리콜에틸에테르아세테이트, 프로필렌글리콜프로필에테르아세테이트, 프로필렌글리콜부틸에테르아세테이트 등의 프로필렌글리콜알킬에테르아세테이트류; 프로필렌글리콜메틸에테르프로피오네이트, 프로필렌글리콜에틸에테르프로피오네이트, 프로필렌글리콜프로필에테르프로피오네이트, 프로필렌글리콜부틸에테르프로피오네이트의 프로필렌글리콜알킬에테르아세테이트류; 톨루엔, 크실렌 등의 방향족 탄화수소류; 메틸에틸케톤, 시클로헥사논, 4-히드록시 4-메틸 2-펜타논 등의 케톤류; 및 초산 메틸, 초산에틸, 초산 프로필, 초산 부틸, 2-히드록시 프로피온산 에틸, 2-히드록시 2-메틸프로피온산 메틸, 2-히드록시 2-메틸프로피온산 에틸, 히드록시초산 메틸, 히드록시초산 에틸,히드록시초산 부틸, 유산 메틸, 유산에틸, 유산 프로필, 유산 부틸, 3-히드록시프로피온산 메틸, 3-히드록시프로피온산에틸, 3-히드록시프로피온산 프로필, 3-히드록시프로피온산 부틸, 2-히드록시 3-메틸부탄산 메틸, 메톡시초산 메틸, 메톡시초산에틸, 메톡시초산 프로필, 메톡시초산 부틸, 에톡시초산 메틸, 에톡시초산에틸, 에톡시초산 프로필, 에톡시초산 부틸, 프로폭시초산 메틸, 프로폭시초산에틸, 프로폭시초산 프로필, 프로폭시초산 부틸, 부톡시초산 메틸, 부톡시초산 에틸, 부톡시초산 프로필, 부톡시초산 부틸, 2-메톡시프로피온산 메틸, 2-메톡시프로피온산 에틸, 2-메톡시프로피온산 프로필, 2-메톡시프로피온산 부틸, 2-에톡시프로피온산 메틸, 2-에톡시프로피온산 에틸, 2-에톡시프로피온산 프로필, 2-에톡시프로피온산 부틸, 2-부톡시프로피온산 메틸, 2-부톡시프로피온산 에틸, 2-부톡시프로피온산 프로필, 2-부톡시프로피온산 부틸, 3-메톡시프로피온산 메틸, 3-메톡시프로피온산 에틸, 3-메톡시프로피온산 프로필, 3-메톡시프로피온산 부틸, 3-에톡시프로피온산 메틸, 3-에톡시프로피온산 에틸, 3-에톡시프로피온산 프로필, 3-에톡시프로피온산 부틸, 3-프로폭시프로피온산 메틸, 3-프로폭시프로피온산 에틸, 3-프로폭시프로피온산 프로필, 3-프로폭시프로피온산 부틸, 3-부톡시프로피온산 메틸, 3-부톡시프로피온산 에틸, 3-부톡시프로피온산 프로필, 3-부톡시프로피온산 부틸 등의 에스테르류 등이 있다. 바람직하게는 용해성, 각 성분과의 반응성 및 도포막의 형성이 용이한 글리콜에테르류, 에틸렌글리콜알킬에테르아세테이트류 및 디에틸렌글리콜류로 이루어진 군으로부터 선택하여 사용하는 것이 좋다.As a solvent used for manufacture of the said photosensitive resin composition coating solution, Alcohol, such as methanol and ethanol; Ethers such as tetrahydrofuran; Glycol ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; Ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; Diethylene glycols such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol dimethyl ether; Propylene glycol monoalkyl ethers such as propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, and propylene glycol butyl ether; Propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, and propylene glycol butyl ether acetate; Propylene glycol alkyl ether acetates such as propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate and propylene glycol butyl ether propionate; Aromatic hydrocarbons such as toluene and xylene; Ketones such as methyl ethyl ketone, cyclohexanone, and 4-hydroxy 4-methyl 2-pentanone; And methyl acetate, ethyl acetate, propyl acetate, butyl acetate, 2-hydroxy propionate, methyl 2-hydroxy 2-methylpropionate, ethyl 2-hydroxy 2-methylpropionate, methyl hydroxyacetate, ethyl hydroxyacetate, Butyl hydroxy acetate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, butyl 3-hydroxypropionate, 2-hydroxy 3 Methyl methyl butyrate, methyl methoxy acetate, ethyl methoxy acetate, methoxy propyl acetate, butyl methoxy acetate, ethoxy acetate, ethyl ethoxy acetate, ethoxy propyl acetate, butyl ethoxy acetate, methyl propoxy acetate , Ethyl propoxy acetate, propyl propoxy acetate, butyl propoxy acetate, methyl butoxy acetate, ethyl butoxy acetate, butyl butoxy acetate, butyl butoxy acetate, methyl 2-methoxypropionate, 2-methoxypropion Ethyl acid, 2-methoxypropionic acid propyl, 2-methoxypropionic acid butyl, 2-ethoxypropionic acid methyl, 2-ethoxypropionic acid ethyl, 2-ethoxypropionic acid propyl, 2-ethoxypropionic acid butyl, 2-butoxypropionic acid Methyl, 2-butoxypropionate, propyl 2-butoxypropionate, butyl 2-butoxypropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, propyl 3-methoxypropionate, butyl 3-methoxypropionate Methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, propyl 3-ethoxypropionic acid, butyl 3-ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, 3-propoxypropionic acid propyl, Esters such as butyl 3-propoxypropionate, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionic acid, and butyl 3-butoxypropionate. Preferably, it is preferable to select and use from the group which consists of solubility, the reactivity with each component, and the formation of a coating film, glycol ether, ethylene glycol alkyl ether acetate, and diethylene glycol.

본 발명은 상기에서 얻어진 감광성 수지 조성물을 스프레이법, 롤코터법, 회전도포법에 의해 기판표면에 도포하여 프리베이크에 의해 용매를 제거하여 도포막을 형성한다. 상기 프리베이크의 조건은 70 ∼ 110 ℃에서 1 ∼ 15분간 정도로 실시하는 것이 바람직하다. 이후, 가시광선, 자외선, 원자외선, 전자선, 엑스선 등을 도포막에 조사한 후 현상액으로 현상하여 불필요한 부분을 제거함으로써 소정 패턴을 형성한다.This invention applies the photosensitive resin composition obtained above to the surface of a board | substrate by the spray method, the roll coater method, and the rotary coating method, and removes a solvent by prebaking, and forms a coating film. It is preferable to perform the conditions of the said prebak at about 1 to 15 minutes at 70-110 degreeC. Thereafter, visible light, ultraviolet rays, far ultraviolet rays, electron beams, X-rays, and the like are irradiated onto the coating film and then developed with a developer to remove unnecessary portions to form a predetermined pattern.

상기 현상액으로는 알칼리 수용액이 사용된다. 예컨대, 수산화 나트륨, 수산화 칼륨, 탄산 나트륨 등의 무기 알칼리류; 에틸아민, n-프로필아민 등의 1급 아민류; 디에틸아민, n-프로필아민 등의 2급 아민류; 트리메틸아민, 메틸디에틸아민, 디메틸에틸아민, 트리에틸아민 등의 3급 아민류; 디메틸에탄올아민, 메틸디에탄올아민, 트리에탄올 아민 등의 알콜아민류; 테트라메틸암모늄히드록시드, 테트라에틸암모늄히드록시드 등의 4급 암모늄염의 수용액을 사용할 수 있다. 상기 현상액은 알칼리성 화합물을 0.1 ∼ 10%의 농도로 용해시켜 사용하며, 메탄올, 에탄올 등과 같은 수용성 유기성 유기용매 및 계면 활성제를 적량 첨가할 수 있다.As the developing solution, an aqueous alkali solution is used. For example, inorganic alkalis, such as sodium hydroxide, potassium hydroxide, sodium carbonate; Primary amines such as ethylamine and n-propylamine; Secondary amines such as diethylamine and n-propylamine; Tertiary amines such as trimethylamine, methyldiethylamine, dimethylethylamine and triethylamine; Alcohol amines such as dimethylethanolamine, methyl diethanolamine and triethanol amine; Aqueous solutions of quaternary ammonium salts, such as tetramethylammonium hydroxide and tetraethylammonium hydroxide, can be used. The developing solution is used by dissolving an alkaline compound at a concentration of 0.1 to 10%, and an appropriate amount of a water-soluble organic organic solvent and a surfactant such as methanol and ethanol can be added.

상기 현상 후, 초순수로 30 ∼ 90초간 세정하여 불필요한 부분을 제거하고 건조하여 패턴을 형성한다. 형성된 패턴에 자외선 등의 빛을 조사한 후, 패턴을 오븐 등의 가열장치에 의해 150 ∼ 250 ℃에서 30 ∼ 90분간 가열처리 하여 최종 패턴을 얻을 수 있다.After the development, washing with ultrapure water for 30 to 90 seconds to remove unnecessary portions and drying to form a pattern. After irradiating light, such as an ultraviolet-ray, to the formed pattern, the pattern is heat-processed at 150-250 degreeC for 30 to 90 minutes with a heating apparatus, such as an oven, and a final pattern can be obtained.

이하 본 발명을 하기 실시예 및 비교예를 참조로 하여 설명한다. 그러나, 이들 예는 본 발명을 예시하기 위한 것일 뿐, 본 발명이 이들에 한정되는 것은 아니다.Hereinafter, the present invention will be described with reference to the following Examples and Comparative Examples. However, these examples are only for illustrating the present invention, and the present invention is not limited thereto.

[실시예]EXAMPLE

[합성예 1]Synthesis Example 1

아크릴계 공중합체의 제조Preparation of Acrylic Copolymer

냉각관과 교반기를 구비한 플라스크에, 2,2’-아조비스(2,4-디메틸발레로니트릴) 10 중량부 및 프로필렌글리콜 모노메틸에테르아세테이트 125 중량부, 메타크릴산 20 중량부, 메타아크릴산 글리시딜 25 중량부, 스타이렌 40 중량부, 2-히드록시에틸아크릴레이트 5 중량부, 아이소보닐아크리레이트 10 중량부를 넣은 후, 질소 치환한 뒤 완만히 교반을 시작하였다. 반응 용액을 62 ℃까지 상승시켜 이 온도를 5시간 동안 유지하여 공중합체[A-1]를 포함하는 중합체 용액을 얻었다. 얻어진 중합체 용액의 고형분 농도는 45 중량%이고, 중합체의 중량평균분자량은 13000 이었다. 이때, 중량평균분자량은 GPC을 사용하여 측정한 폴리스타이렌 환산평균분자량이다.In a flask equipped with a cooling tube and a stirrer, 10 parts by weight of 2,2'-azobis (2,4-dimethylvaleronitrile), 125 parts by weight of propylene glycol monomethyl ether acetate, 20 parts by weight of methacrylic acid, and methacrylic acid 25 parts by weight of glycidyl, 40 parts by weight of styrene, 5 parts by weight of 2-hydroxyethyl acrylate and 10 parts by weight of isobornyl acrylate were added, followed by nitrogen substitution, and gently stirring was started. The reaction solution was raised to 62 ° C. and maintained at this temperature for 5 hours to obtain a polymer solution containing copolymer [A-1]. Solid content concentration of the obtained polymer solution was 45 weight%, and the weight average molecular weight of the polymer was 13000. In this case, the weight average molecular weight is a polystyrene converted average molecular weight measured using GPC.

[합성예 2]Synthesis Example 2

1,2-퀴논디아지드 화합물의 제조Preparation of 1,2-quinonediazide compound

4,4’-[1-[4-[1-[4-히드록시페닐]-1-메틸에틸]페닐]에틸리덴]비스페놀 1 mol과 1,2-나프토퀴논디아지드 5-술폰산[클로라이드] 2 mol을 축합반응시켜 [4,4’-[1-[4-[1-[4-히드록시페닐]-1-메틸에틸]페닐]에틸리덴]비스페놀 1,2-나프토퀴논디아지드-5-술폰산 에스테르]를 제조하였다.1 mol of 4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol and 1,2-naphthoquinonediazide 5-sulfonic acid [chloride ] 2 mol of condensation reaction to [4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol 1,2-naphthoquinonediazide -5-sulfonic acid ester].

[실시예 1]Example 1

감광성 수지 조성물의 제조Preparation of Photosensitive Resin Composition

합성예 1에서 얻어진 중합체 용액(공중합체[A-1]) 100 중량부, 상기 합성예 2에서 얻어진 축합물 [4,4’-[1-[4-[1-[4-히드록시페닐]-1-메틸에틸]페닐]에틸리덴]비스페놀 1,2-나프토퀴논디아지드 5-술폰산 에스테르] 25 중량부, 및 하기 화학식 1a의 아크릴레이트 화합물 15 중량부를 혼합하여, 고형분 농도가 35 중량%가 되도록 디에틸렌글리콜 디메틸에테르에 용해시킨 뒤 0.2 ㎛의 밀리포아필터로 여과하여 감광성 수지 조성물 용액을 제조하였다.100 parts by weight of the polymer solution (copolymer [A-1]) obtained in Synthesis Example 1, the condensate obtained in Synthesis Example 2 [4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol 1,2-naphthoquinonediazide 5-sulfonic acid ester] 25 parts by weight, and 15 parts by weight of the acrylate compound of the formula (1a) were mixed to obtain a solid content of 35% by weight. It was dissolved in diethylene glycol dimethyl ether to be filtered through a 0.2 μm Millipore filter to prepare a photosensitive resin composition solution.

[화학식 1a][Formula 1a]

상기에서 제조된 감광성 수지 조성물에 대하여 하기와 같은 방법으로 물성을 평가한 후 그 결과를 하기 표 1에 나타내었다.The physical properties of the photosensitive resin composition prepared above were evaluated by the following method, and the results are shown in Table 1 below.

1) 감도: 글래스(glass) 기판 상에 스핀 코터를 사용하여 상기 조성물 용액(1)을 도포한 뒤, 90 ℃로 2분간 핫 플레이트상에서 프리베이크하여 막을 형성하였다.1) Sensitivity: The composition solution 1 was applied on a glass substrate using a spin coater, and then prebaked at 90 ° C. on a hot plate for 2 minutes to form a film.

상기에서 얻어진 막에 소정 패턴 마스크(pattern mask)를 사용하여 365 nm 에서의 강도가 15 mW/㎠ 인 자외선을 20초간 조사하였다. 이후, 테트라메틸암모늄히드록시드 2.38 중량%의 수용액으로 25 ℃로 1분간 현상한 후, 초순수로 1분간 세정하였다.The film obtained above was irradiated with the ultraviolet-ray whose intensity | strength at 365 nm is 15 mW / cm <2> for 20 second using the predetermined pattern mask. Thereafter, the solution was developed at 25 ° C. for 1 minute in an aqueous solution of 2.38 wt% tetramethylammonium hydroxide, and then washed with ultrapure water for 1 minute.

그런 다음, 상기에서 형성된 패턴(pattern)에 365 nm 에서의 강도가 15 mW/㎠ 인 자외선을 34초간 조사한 뒤 오븐 속에서 220 ℃로 60분간 가열하여 경화시켜 패턴(pattern) 막을 얻었다.Thereafter, the pattern formed above was irradiated with ultraviolet light having an intensity of 15 mW / cm 2 at 365 nm for 34 seconds and then heated and cured at 220 ° C. for 60 minutes in an oven to obtain a pattern film.

2) 해상도: 해상도의 평가 상기(I)로 얻어진 패턴(pattern)막에 있어서 형성된 최소 크기로 하였다.2) Resolution: Evaluation of Resolution It was set as the minimum size formed in the pattern film obtained by said (I).

3) 투명성: 투명성의 평가 분광광도계를 이용하여 패턴(pattern) 막의 400 nm의 투과율을 측정하였다.3) Transparency: Evaluation of Transparency The transmittance of 400 nm of the pattern film was measured using a spectrophotometer.

4) 내열변색성: 내열변색성의 평가측정기판을 250 ℃의 오븐으로 1시간 동안 가열하여, 가열전후에 있어서의 패턴(pattern) 막의 투과율의 변화에 의해 내열변색성을 평가하였다. 이때의 변화율이 5% 미만인 경우를[○], 5∼10% 인 경우를 [△], 10%를 넘은 경우를[×]로 표시하였다.4) Heat discoloration resistance: Evaluation of heat dissipation resistance The measurement substrate was heated in an oven at 250 ° C. for 1 hour, and heat discoloration resistance was evaluated by changing the transmittance of the pattern film before and after heating. The case where the change rate at this time was less than 5% was represented by [(circle)] and the case where it was 5-10% [△] and the case where it exceeded 10% was represented by [x].

[실시예 2]Example 2

상기 화학식 1a의 아크릴레이트 화합물 대신 하기 화학식 1b의 아크릴레이트 화합물을 사용한 것을 제외하고는, 상기 실시예 1과 같은 방법으로 조성물 용액을 제조하여 물성을 평가하였고 그 결과를 하기 표 1에 나타내었다.Except for using the acrylate compound of Formula 1b instead of the acrylate compound of Formula 1a, to prepare a composition solution in the same manner as in Example 1 to evaluate the physical properties and the results are shown in Table 1 below.

[화학식 1b][Formula 1b]

[실시예 3]Example 3

상기 화학식 1a의 아크릴레이트 화합물 대신 하기 화학식 1c의 아크릴레이트 화합물을 사용한 것을 제외하고는, 상기 실시예 1과 같은 방법으로 조성물 용액을 제조하여 물성을 평가하였고 그 결과를 하기 표 1에 나타내었다.Except for using the acrylate compound of Formula 1c instead of the acrylate compound of Formula 1a, to prepare a composition solution in the same manner as in Example 1 to evaluate the physical properties and the results are shown in Table 1 below.

[화학식 1c][Formula 1c]

[비교예 1]Comparative Example 1

상기 화학식 1a 내지 1c의 아크릴레이트 화합물을 사용하지 않은 것을 제외하고는, 실시예 1과 같은 방법으로 조성물 용액을 제조하여 물성을 평가하였고 그 결과를 하기 표 1에 나타내었다.Except not using the acrylate compound of Formula 1a to 1c, the composition solution was prepared in the same manner as in Example 1 to evaluate the physical properties and the results are shown in Table 1 below.

구 분division 감도(mJ/㎠)Sensitivity (mJ / ㎠) 해상도 (㎛)Resolution (μm) 투명성Transparency 내열변색성Heat discoloration resistance 실시예 1Example 1 230230 33 9292 실시예 2Example 2 220220 33 9292 실시예 3Example 3 230230 33 9292 비교예 1Comparative Example 1 270270 44 8888 ××

상기의 표 1에서 보면, 본 발명에 따른 상기 화학식 1의 에틸렌성 불포화 2중 결합을 갖는 아크리레이트를 포함하는 실시예 1 내지 3의 경우는 특히 투명성과 내열변색성이 우수하여 고평탄성을 위한 막두께가 두꺼운 층간절연막에 적용하여도 무방함을 알 수 있다. 이에 반해, 비교에 1의 경우 감도가 불량하였으며 투명성이나 내열변색성이 좋지 못하여 두거운 층간절연막에 적용하기 어렵다.In Table 1, Examples 1 to 3 including the acrylate having an ethylenically unsaturated double bond of Formula 1 according to the present invention is particularly excellent in transparency and heat discoloration resistance for high flatness It can be seen that it can be applied to an interlayer insulating film having a thick film thickness. On the contrary, in the case of 1, the sensitivity is poor, and the transparency and the heat discoloration resistance are poor, making it difficult to apply to the thick interlayer insulating film.

상기한 바와 같이, 본 발명에 따른 감광성 수지 조성물은 감도, 절연성, 평탄성 및 내약품성 등이 뛰어나며, 특히 층간 절연막으로서 패턴 형성이 용이하고 두꺼운 막에서도 투과율이 우수하여 LCD 제조 공정의 층간 절연막으로 사용하기에 효과적이다.As described above, the photosensitive resin composition according to the present invention has excellent sensitivity, insulation, flatness, chemical resistance, etc., in particular, it is easy to form a pattern as an interlayer insulating film, and has excellent transmittance even in a thick film. Effective in

Claims (8)

감광성 수지 조성물에 있어서,In the photosensitive resin composition, (A)ⅰ) 불포화 카르본산, 불포화 카르본산 무수물, 또는 이들의 혼합물;(A) iii) unsaturated carboxylic acid, unsaturated carboxylic anhydride, or mixtures thereof; ⅱ) 에폭시기 함유 불포화화합물; 및Ii) epoxy group-containing unsaturated compounds; And ⅲ) 올레핀계 불포화 화합물Iii) olefinically unsaturated compounds 을 공중합시켜 얻어진 아크릴계 공중합체;Acrylic copolymer obtained by copolymerizing; (B) 1,2-퀴논디아지드 화합물; 및(B) 1,2-quinonediazide compounds; And (C) 하기 화학식 1로 표시되는 아크릴레이트 화합물(C) an acrylate compound represented by the following formula (1) 을 포함하는 것을 특징으로 하는 감광성 수지 조성물:A photosensitive resin composition comprising: [화학식 1][Formula 1] 상기 화학식 1에서,In Chemical Formula 1, R은 수소원자, 또는 C1∼C5의 알킬기, 알콕시기, 또는 알카노일기이며; 및R is a hydrogen atom or a C 1 -C 5 alkyl group, an alkoxy group, or an alkanoyl group; And 1< a <6 이고, a + b = 6이다.1 <a <6 and a + b = 6. 제 1 항에 있어서,The method of claim 1, 상기 감광성 수지 조성물이The photosensitive resin composition (A)ⅰ) 불포화 카르본산, 불포화 카르본산 무수물, 또는 이들의 혼합물 5 내(A) iii) unsaturated carboxylic acid, unsaturated carboxylic anhydride, or mixtures thereof 5 지 40 중량%;40% by weight; ⅱ) 에폭시기 함유 불포화화합물 10 내지 70 중량%; 및Ii) 10 to 70% by weight of an epoxy group-containing unsaturated compound; And ⅲ) 올레핀계 불포화 화합물 10 내지 70 중량%V) 10 to 70% by weight of olefinically unsaturated compound 를 공중합시켜 얻어진 아크릴계 공중합체 100 중량부;100 parts by weight of an acrylic copolymer obtained by copolymerizing; (B) 1,2-퀴논디아지드 화합물 5 내지 100 중량부; 및(B) 5 to 100 parts by weight of the 1,2-quinonediazide compound; And (C) 상기 화학식 1로 표시되는 아크릴레이트 화합물 1 내지 50 중량부(C) 1 to 50 parts by weight of the acrylate compound represented by Formula 1 를 포함하는 것을 특징으로 하는 감광성 수지 조성물.Photosensitive resin composition comprising a. 제 1 항 또는 제 2 항에 있어서,The method according to claim 1 or 2, 상기 (A) 아크릴계 공중합체의 폴리스타이렌 환산중량평균분자량(Mw)이 5,000 내지 30,000인 것을 특징으로 하는 감광성 수지 조성물.The polystyrene reduced weight average molecular weight (Mw) of the said (A) acrylic copolymer is 5,000-30,000, The photosensitive resin composition characterized by the above-mentioned. 제 1 항 또는 제 2 항에 있어서,The method according to claim 1 or 2, 상기 (A)ⅰ)의 불포화 카르본산, 불포화 카르본산 무수물, 또는 이들의 혼합물이 아크릴산, 메타크릴산, 말레인산, 푸마르산, 시트라콘산, 메사콘산, 이타콘산, 및 이들의 불포화 카르본산 무수물로 이루어진 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 감광성 수지 조성물.The unsaturated carboxylic acid, unsaturated carboxylic anhydride, or a mixture thereof of (A) ') is composed of acrylic acid, methacrylic acid, maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid, and unsaturated carboxylic anhydrides thereof 1 or more types are selected from the group. Photosensitive resin composition characterized by the above-mentioned. 제 1 항 또는 제 2 항에 있어서,The method according to claim 1 or 2, 상기 (A)ⅱ)의 에폭시기 함유 불포화 화합물이The epoxy group-containing unsaturated compound of the above (A) ii) 아크릴산 글리시딜, 메타크릴산 글리시딜, α-에틸 아크릴산 글리시딜, α-n-프로필아크릴산 글리시딜, α-n-부틸아크릴산 글리시딜, 아크릴산-β-메틸글리시딜, 메타크릴산-β-메틸글리시딜, 아크릴산-β-에틸글리시딜, 메타크릴산-β-에틸글리시딜, 아크릴산-3,4-에폭시부틸, 메타크릴산-3,4-에폭시부틸, 아크릴산-6,7-에폭시헵틸, 메타크릴산-6,7-에폭시헵틸, α-에틸 아크릴산-6,7-에폭시헵틸, o-비닐벤질 글리시딜 에테르, m-비닐벤질 글리시딜 에테르, 및 p-비닐벤질 글리시딜 에테르로 이루어진 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 감광성 수지 조성물.Glycidyl acrylate, Glycidyl methacrylate, α-ethyl acrylate glycidyl, α-n-propyl acrylate glycidyl, α-n-butyl acrylate glycidyl, acrylic acid-β-methylglycidyl, meta Methacrylate-β-methylglycidyl, acrylic acid-β-ethylglycidyl, methacrylic acid-β-ethylglycidyl, acrylic acid-3,4-epoxybutyl, methacrylic acid-3,4-epoxybutyl, Acrylic acid-6,7-epoxyheptyl, methacrylic acid-6,7-epoxyheptyl, α-ethyl acrylic acid-6,7-epoxyheptyl, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, And p-vinylbenzyl glycidyl ether. 제 1 항 또는 제 2 항에 있어서,The method according to claim 1 or 2, 상기 (A)ⅲ)의 올레핀계 불포화 화합물이 메틸메타크릴레이트, 에틸메타크릴레이트, n-부틸 메타크릴레이트, sec-부틸메타크릴레이트, t-부틸 메타크릴레이트, 메틸아크릴레이트, 이소프로필 아크릴레이트, 시클로헥실 메타크릴레이트, 2-메틸시클로 헥실메타크릴레이트, 디시클로펜타닐옥시에틸메타크릴레이트, 이소보로닐메타크릴레이트, 시클로헥실아크릴레이트, 2-메틸시클로헥실아크릴레이트, 디시클로펜타닐옥시에틸아크릴레이트, 이소보로닐아크릴레이트, 페닐메타크릴레이트, 페닐아크릴레이트, 벤질아크릴레이트, 2-히드록시에틸메타크릴레이트, 스타이렌, α-메틸 스타이렌, m-메틸 스타이렌, p-메틸 스타이렌, 비닐톨루엔, p-메틸 스타이렌,1,3-부타디엔, 이소프렌, 및 2,3-디메틸 1,3-부타디엔으로 이루어진 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 감광성 수지 조성물.The olefinically unsaturated compound of (A) ') is methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, sec-butyl methacrylate, t-butyl methacrylate, methyl acrylate, isopropyl acryl Latex, cyclohexyl methacrylate, 2-methylcyclohexyl methacrylate, dicyclopentanyloxyethyl methacrylate, isobornyl methacrylate, cyclohexyl acrylate, 2-methylcyclohexyl acrylate, dicyclopentanyl Oxyethyl acrylate, isoboroyl acrylate, phenyl methacrylate, phenyl acrylate, benzyl acrylate, 2-hydroxyethyl methacrylate, styrene, α-methyl styrene, m-methyl styrene, p At least one selected from the group consisting of -methyl styrene, vinyltoluene, p-methyl styrene, 1,3-butadiene, isoprene, and 2,3-dimethyl 1,3-butadiene Photosensitive resin composition characterized by the above-mentioned. 제 1 항 또는 제 2 항에 있어서,The method according to claim 1 or 2, 상기 (B)의 1,2-퀴논디아지드 화합물이 1,2-퀴논디아지드 4-술폰산 에스테르, 1,2-퀴논디아지드 5-술폰산 에스테르, 또는 1,2-퀴논디아지드 6-술폰산 에스테르인 것을 특징으로 하는 감광성 수지 조성물.The 1,2-quinonediazide compound of (B) is a 1,2-quinonediazide 4-sulfonic acid ester, 1,2-quinonediazide 5-sulfonic acid ester, or 1,2-quinonediazide 6-sulfonic acid ester It is a photosensitive resin composition characterized by the above-mentioned. 제 1 항에 있어서,The method of claim 1, 상기 감광성 수지 조성물이 (A)의 아크릴계 공중합체 100 중량부에 대하여 (D) 에폭시수지 0.1 내지 30 중량부, (E) 접착제 0.1 내지 20 중량부, 및 (F) 계면활성제 0.0001 내지 2 중량부로 이루어진 군으로부터 1 종 이상 선택되는 첨가제를 더욱 포함하는 것을 특징으로 하는 감광성 수지 조성물.The photosensitive resin composition is composed of 0.1 to 30 parts by weight of (D) epoxy resin, 0.1 to 20 parts by weight of (E) adhesive, and 0.0001 to 2 parts by weight of (F) surfactant based on 100 parts by weight of the acrylic copolymer of (A). The photosensitive resin composition characterized by further including the additive selected from the group of 1 or more types.
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* Cited by examiner, † Cited by third party
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KR100903356B1 (en) * 2003-05-07 2009-06-23 주식회사 동진쎄미켐 Photosensitive resin composition and dry film resist using the same
KR101030310B1 (en) * 2004-04-09 2011-04-20 주식회사 동진쎄미켐 Photosensitive resin composition
KR101326595B1 (en) * 2005-06-04 2013-11-20 주식회사 동진쎄미켐 Photosensitive resin composition and method of manufacturing a thin film transistor substrate and method of manufacturing a common electrode substrate using the same
KR20140087814A (en) * 2012-12-31 2014-07-09 동우 화인켐 주식회사 Photosensitive resin composition and insulating layer prepared from the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
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JPS5951920A (en) * 1982-09-10 1984-03-26 Mitsubishi Rayon Co Ltd Flat coating composition excellent in abrasion resistance
TW268011B (en) * 1993-07-02 1996-01-11 Ciba Geigy
JP3626275B2 (en) * 1996-04-09 2005-03-02 Jsr株式会社 Photocurable resin composition
US6136497A (en) * 1998-03-30 2000-10-24 Vantico, Inc. Liquid, radiation-curable composition, especially for producing flexible cured articles by stereolithography

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KR100903356B1 (en) * 2003-05-07 2009-06-23 주식회사 동진쎄미켐 Photosensitive resin composition and dry film resist using the same
KR101030310B1 (en) * 2004-04-09 2011-04-20 주식회사 동진쎄미켐 Photosensitive resin composition
KR101326595B1 (en) * 2005-06-04 2013-11-20 주식회사 동진쎄미켐 Photosensitive resin composition and method of manufacturing a thin film transistor substrate and method of manufacturing a common electrode substrate using the same
KR20140087814A (en) * 2012-12-31 2014-07-09 동우 화인켐 주식회사 Photosensitive resin composition and insulating layer prepared from the same

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