KR20030001636A - Method for manufacturing phase split mask - Google Patents

Abstract

PURPOSE: A fabrication method of a phase dividing mask is provided to prevent a failure of wafer and to minimize losses by comparing CD(Critical Dimension) between a wafer pattern and a mask and searching an optimized focusing distance and energy margin. CONSTITUTION: A MoSiN layer(20) and a chrome film(30) are sequentially formed on a quartz substrate(10). After forming a resist pattern(40), the chrome film(30) is etched by using the resist pattern(40) as a mask. After removing the resist pattern, a resist is coated by dividing a mask to 1/4 and the first region is exposed. After removing the chrome film(30) of the first region, the first region is opened by cleaning using SC1 mixed solution. After coating a resist on the resultant structure, the resist of the second region is removed. After removing the chrome film(30) of the second region, the first and second region are opened by cleaning using SC1 mixed solution. After removing the chrome film(30) of the third region, the first, second and third region are opened by cleaning using SC1. After removing the chrome film(30) of the fourth region, the first, second, third and fourth region are opened by cleaning using SC1 mixed solution.

Description

METHODE FOR MANUFACTURING PHASE SPLIT MASK

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a phase-division mask, wherein the mask is divided into quarters and subjected to matrix division exposure to compare the CD (Critical Dimension) of the wafer pattern with the divided mask and the CD (Critical Dimension) on the mask. The present invention relates to a method of manufacturing a phase-division mask that can improve the yield of a semiconductor device by minimizing losses by preventing wafer defects by finding an accurate specification and an optimum focal length and energy margin on a wafer.

In general, a photolithography process, which is widely used in a semiconductor device manufacturing process, uses a photomask that is divided into a part that transmits light and a part that blocks light in a shape to make a semiconductor device.

That is, the general photo mask is composed of a light shielding pattern and a light transmitting pattern to allow selective exposure.

However, as the pattern density increases, diffraction phenomena (light diffraction phenomenon) occurs and there is a limit in improving the resolution.

Therefore, a process of increasing the resolution using a phase shifting mask has been studied in various fields.

The technique using a phase inversion mask is a technique that uses a combination of a light transmitting area that transmits light as it is and a reversed light transmitting area that transmits light by inverting 180 ° to prevent the resolution from being reduced between the light shielding pattern and the light transmitting area.

Such masks have increased optical resolution limits due to the development of mask manufacturing technology, which has resulted in the modification of masks using light retardation.

The phase inversion mask is based on Levenson's Alternate Type Phase-Shifting Mask, and a rim type RIM type phase inversion mask proposed by Nitayama and others to improve the resolution limit of contact holes is provided. Appeared.

Hereinafter, a conventional phase inversion mask will be described with reference to the accompanying drawings.

1A to 1D are cross-sectional views illustrating a manufacturing process of a conventional one phase inversion mask and is an alternate type phase inversion mask.

The alternate type phase inversion mask will be briefly described as a phase inversion mask in which the amplitudes of light passing through the two light transmission patterns are opposite when there are two light transmission patterns having a light shielding pattern interposed therebetween.

As illustrated in FIG. 1A, an etch-stopper layer 12 and a chromium layer 13 are formed thicker than a predetermined thickness on the light transmissive substrate 10 to obtain a perfect light shielding effect.

As shown in FIG. 1B, the resist 14 is deposited on the chromium layer 13, the resist 14 is patterned by electron beam irradiation and development, and then the etching process using the patterned resist 14 as a mask is performed. The chromium layer 13 is selectively etched to form a chromium pattern 16 having a plurality of opening regions 15.

As shown in FIG. 1C, the phase inversion layer 17 is formed on the entire surface including the chromium pattern 16.

As shown in FIG. 1D, the phase inversion layer 17 is selectively removed to alternately form on the opening region 15.

According to such a conventional method of manufacturing a phase inversion mask, there is a problem in that the influence of the wafer due to the exact numerical value and the phase difference on the phase is unknown.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention relates to a method for manufacturing a phase-division mask, wherein the mask is divided into quarters and subjected to matrix division exposure to perform CD of the wafer pattern using the divided mask. (Critical Dimension) and CD (Critical Dimension) on the mask to find the exact specification of the phase reversal, the optimum focal length and energy margin on the wafer to prevent wafer defects to minimize the loss to improve the yield of semiconductor devices It is to provide a phase separation mask manufacturing method.

1A to 1D are cross-sectional views illustrating a method of manufacturing a phase inversion mask according to the prior art.

2A to 6C are diagrams illustrating a method of manufacturing a phase division mask according to the present invention.

-Explanation of symbols for the main parts of the drawings-

10: Quartz 20: MoSiN

30: chrome 40: resist

According to the present invention for realizing the above object, in the method of manufacturing a phase inversion mask, forming a MOSiN film, a chromium layer, and a resist on the quartz in turn, and then exposing and developing the chromium layer using the resist as a mask. And then removing the resist, coating the resist by quartering the mask and exposing only the first region, removing the resist after removing the chromium in the first region, and cleaning with SCI mixture. The step of opening the first region, the step of removing the resist of the second region after coating the resist on the result of the opening of the first region, and removing all the remaining resist after removing the chromium of the second region SC1 Washing with a mixed solution to open the first region and the second region, and applying a resist to the resultant opening of the first and second regions. Removing the third resist after coating and removing the chromium in the third region, and removing all the remaining resist after removing the chromium in the third region and washing with SC1 mixture solution to clean the first, second, and third Opening the region, removing the chromium in the fourth region of the resultant product in which the first, second, and third regions are opened, and cleaning the mixture using the SC1 mixed solution to clean the first, second, third, and fourth regions. It relates to a method of manufacturing a phase inversion mask comprising the step of opening all.

At this time, the washing step for opening the first region is to wash the SC1 mixture of DI water: H 2 O 2: NH 4 OH = 17ml: 35ml: 88ml for 150 seconds at 65 ℃ condition, the first and second regions The washing step to open the step is characterized in that the DI water: H 2 O 2: NH 4 OH = 17 mL: 35 mL: 88 mL ratio SC1 mixture is characterized in that the cleaning for 100 seconds at 65 ℃ conditions.

In addition, the washing step for opening the first, second, third region is a SC1 mixture of DI water: H 2 O 2: NH 4 OH = 17ml: 35ml: 88ml ratio for 50 seconds at 65 ℃ condition, and The cleaning step for opening the first, second, third, and fourth regions is characterized in that the SC1 mixture of DI water: H 2 O 2: NH 4 OH = 138: 1: 1 is washed at 30 ° C. for 300 seconds.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the present embodiment is not intended to limit the scope of the present invention, but is presented by way of example only and the same parts as in the conventional configuration using the same reference numerals and names.

2A to 2C are diagrams illustrating a primary exposure process in a mask manufacturing process according to the present invention.

As shown in FIG. 2A, the MOSiN film 20, the chromium layer 30, and the resist 40 are sequentially formed on the quartz 10, and then exposed and developed. Then, the resist 40 is shown in FIG. 2B. After etching the chromium layer 30 with a mask, the resist is removed so that the (A), (B), (C) and (D) regions are not opened as shown in FIG.

3A to 3E are diagrams illustrating a step of opening a region (a).

As shown in FIG. 3A, a resist 40 is coated on the substrate formed as shown in FIG. 2B, and only the (i) region is exposed using the EX3 stepper as shown in FIG. 3B.

Subsequently, as shown in FIG. 3C, the chromium 30 in the region (A) is removed, and then, as shown in FIG. 3D, all of the resist 40 is removed, and DI water: H 2 O 2: NH 4 OH is 17 ml: 35 ml: 88 ml. After cleaning at 65 ° C. for 150 sec, only the region (a) is opened as shown in FIG. 3e.

4A to 4E are diagrams showing the step of opening the region (B).

As shown in FIG. 4A, the resist 40 is coated on the resultant formed in FIG. 3D, and then the resist 40 in the regions (A) and (B) is removed as shown in FIG. 4B.

Subsequently, as shown in FIG. 4C, chromium in region (B) is removed, and all remaining resist 40 is removed as shown in FIG. 4D, and DI water: H 2 O 2: NH 4 OH is 17 ml: 35 ml: 88 ml. 100 sec at 65 ° C. to open the (A) and (B) regions as shown in FIG. 4E.

At this time, the area (A) is cleaned for 150 seconds + 100 seconds, so the phase change is larger than that of the area (B), and the area (D) has no phase change.

5A to 5E are diagrams showing the steps of opening (a) (b) (c) regions.

As shown in Fig. 5A, the resist is coated on the resultant formed in Fig. 4D, and then the resist in the region (C) is removed as shown in Fig. 5B.

Subsequently, after removing chromium in the region (C) as shown in FIG. 5C, the remaining resist was controlled as shown in FIG. 5D, and DI water: H 2 O 2: NH 4 OH was added at 65 ° C. in a ratio of 17 mL: 35 mL: 88 mL. After cleaning for 50sec, (a) (b) (c) area is opened as shown in FIG.

At this time, (a) area is 150 seconds + 100 seconds + 50 seconds, (b) area is 100 seconds + 50 seconds, (c) area is cleaned for 50 seconds, so the phase of each area will be different.

6A to 6C are diagrams showing the steps of opening both (i) (b) and (d) regions.

As shown in FIG. 6B, the resultant shown in FIG. 6A is removed from chromium (D), and DI water: H 2 O 2: NH 4 OH is washed at 300 ° C. for 30 sec at a ratio of 138: 1: 1, as shown in FIG. 6C. (A) (B) (D) After opening all the areas, compare the CD (Critical Dimension) of the divided mask with the CD (Critical Dimension) of the main pattern and compare the focal length margin or energy margin. Set the specification for the phase.

At this time, since the cleaning time is different in each region, the phase is divided at regular intervals.

As described above, the present invention manufactures a phase-division mask and uses the same to find an accurate specification for phase inversion and a maximum focal length margin or energy margin on the wafer to prevent wafer defects.

As described above, the present invention relates to a method for manufacturing a phase-division mask, wherein the mask is divided into quarters to perform matrix division exposure, and the CD (Critical Dimension) of the wafer pattern and the CD (Critical Dimension) on the mask are divided. In comparison, it is possible to improve the yield of semiconductor devices by minimizing losses by preventing wafer defects by finding an accurate specification of phase inversion and an optimal focal length and energy margin on the wafer.

Claims (5)

Forming a MOSiN film, a chromium layer, and a resist in turn on the quartz and then exposing and developing the same; Etching the chromium layer using the resist as a mask and then removing the resist; Quartering the mask to coat the resist and exposing only the first area, Removing the resist after removing the chromium in the first region, and washing with the SCI mixture to open the first region; Removing the resist of the second region after coating the resist on the result of opening the first region; Removing the remaining resist after removing the chromium in the second region, and washing with the SC1 mixed solution to open the first region and the second region; Removing the chromium from the third region after removing the third resist after coating the resist on the resultant product in which the first and second regions are opened; Removing all of the remaining resist after removing the chromium from the third region and cleaning the mixture using SC1 mixture solution to open the first, second, and third regions; Removing the chromium from the fourth region of the resultant product in which the first, second, and third regions are opened, and washing with an SC1 mixed solution to open all of the first, second, third, and fourth regions; Method for producing a phase separation mask comprising a. The method of claim 1, wherein the cleaning step for opening the first region is characterized in that the SC 1 mixture of DI water: H 2 O 2: NH 4 OH = 17 ml: 35 ml: 88 ml ratio is washed at 65 ° C. for 150 seconds. Phase separation mask manufacturing method. The method of claim 1, wherein the washing step for opening the first and second regions comprises washing the SC 1 mixture in a DI water: H 2 O 2: NH 4 OH = 17 mL: 35 mL: 88 mL ratio at 65 ° C. for 100 seconds. A phase dividing mask manufacturing method characterized by the above-mentioned. The method of claim 1, wherein the washing step for opening the first, second and third regions is performed by using a DI water: H 2 O 2: NH 4 OH = 17 ml: 35 ml: 88 ml ratio of SC1 mixture at 65 ° C. for 50 seconds. A phase dividing mask manufacturing method characterized by washing. The method of claim 1, wherein the cleaning step for opening the first, second, third, and fourth regions is performed by using a SC1 mixture having a DI water: H 2 O 2: NH 4 OH ratio of 138: 1: 1 for 300 seconds at 30 ° C. A phase dividing mask manufacturing method characterized by washing.