KR200244931Y1 - Device for controlling wafer contact of semiconductor deposition system - Google Patents
Device for controlling wafer contact of semiconductor deposition system Download PDFInfo
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- KR200244931Y1 KR200244931Y1 KR2019980002329U KR19980002329U KR200244931Y1 KR 200244931 Y1 KR200244931 Y1 KR 200244931Y1 KR 2019980002329 U KR2019980002329 U KR 2019980002329U KR 19980002329 U KR19980002329 U KR 19980002329U KR 200244931 Y1 KR200244931 Y1 KR 200244931Y1
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Abstract
본 고안에 의한 반도체증착장비의 웨이퍼 접촉면 조절장치는 웨이퍼를 보트내벽에 형성된 보트라드위에 올려놓고 증착공정을 진행하는 반도체 증착장비에 있어서, 상기 웨이퍼와 접촉되는 보트라드의 상면 일측에 볼유동홈과, 상기 볼유동홈내에 설치되어 유출입되는 가스의 압력에 의해 상승 및 하강동작을 하는 웨이퍼받침볼을 가지는 상하유동수단을 설치하고, 상기 보트내에 상하유동수단과 연결되도록 유압조절수단을 설치하여, 상기 유압조절수단에 의해 상하유동수단을 구동시킴으로써 웨이퍼와 보트라드의 간격을 조절하도록 하여 웨이퍼탈착시 발생하는 증착막 이물발생을 줄이도록 하였다.The wafer contact surface control apparatus of the semiconductor deposition apparatus according to the present invention is a semiconductor deposition apparatus that performs a deposition process by placing a wafer on the boat rod formed on the inner wall of the boat, the ball flow groove and the ball flow groove on one side of the upper surface of the boat rod in contact with the wafer And installing up and down flow means having a wafer support ball installed in the ball flow groove to move up and down by the pressure of the gas flowing in and out, and installing hydraulic control means to be connected to the up and down flow means in the boat. By driving the up and down flow means by the hydraulic control means to adjust the gap between the wafer and the boat rod to reduce the generation of foreign matter deposited on the wafer detachment.
Description
본 고안은 반도체증착장비의 웨이퍼 접촉면 조절장치에 관한 것으로, 특히 웨이퍼가 놓여지는 보트의 보트라드내에 웨이퍼받침볼을 상하이동가능하게 설치하여, 웨이퍼탑재시 웨이퍼와 보트라드가 닿지 않도록 조절하므로, 웨이퍼탈착시 발생하는 증착막 이물발생을 줄이도록 한 반도체증착장비의 웨이퍼 접촉면 조절장치에 관한 것이다.The present invention relates to a wafer contact surface control device of a semiconductor deposition apparatus, and in particular, by installing the wafer support ball in the boat rod of the boat on which the wafer is placed so as to be movable, the wafer and boat rod are adjusted so that the wafer does not come into contact with the wafer. The present invention relates to a wafer contact surface control apparatus of a semiconductor deposition apparatus to reduce deposition of foreign matters generated during desorption.
종래의 기술에 의한 반도체증착장비는 도 1에 도시한 바와 같이, 보트(10)내의 보트라드(10a)에 웨이퍼(3)가 소정간격으로 장착된 후, 보트(10)내에 가스(2)를 주입하여 웨이퍼(3)를 증착하게 된다. 이때 웨이퍼(3) 앞면과 뒷면뿐만 아니라 보트(10)에도 막(1)이 증착되게 된다.In the semiconductor deposition apparatus according to the related art, as shown in FIG. 1, after the wafers 3 are mounted on the boat rod 10a in the boat 10 at predetermined intervals, the gas 2 is loaded into the boat 10. Injection is performed to deposit the wafer 3. At this time, the film 1 is deposited on the boat 10 as well as the front and rear surfaces of the wafer 3.
도 2 및 도 3을 참고로 웨이퍼(3)와 보트(10)에 증착막(1)이 증착되는 동작을 살펴보면 다음과 같다. 보트라드(10a)위에 웨이퍼(3)를 올려놓은 다음 증착공정을 진행하게 되면, 도 2와 같이 웨이퍼(3)의 앞면과 뒷면 그리고 보트라드(10a)의 둘레에 증착막(1)이 증착되게 된다. 증착공정을 마친후 웨이퍼(3)를 상기 보트라드(10a)로부터 떼어낼 때 상기 웨이퍼(3)와 보트라드(10a)의 접촉면에서 증착막(1)이 떨어지면서 이물(4)로 작용하게 된다.Referring to FIGS. 2 and 3, the operation of depositing the deposition film 1 on the wafer 3 and the boat 10 will be described below. When the wafer 3 is placed on the boat rod 10a and then the deposition process is performed, the deposition film 1 is deposited around the front and rear surfaces of the wafer 3 and the boat rod 10a as shown in FIG. 2. . When the wafer 3 is detached from the boat rod 10a after the deposition process is completed, the deposition film 1 falls on the contact surface between the wafer 3 and the boat rod 10a to act as a foreign material 4.
종래의 기술에서는 상기한 바와 같이, 보트라드(10a)와 웨이퍼(3)가 접촉 되어있어, 증착고정후 웨이퍼(3)를 떼어낼 때 웨이퍼(3)와 보트라드(10a)가 닿는 부분의 증착막이 떨어지면서 이물(4)이 발생하게 되는 문제점이 있다.In the prior art, as described above, the boat rod 10a and the wafer 3 are in contact with each other, and when the wafer 3 is removed after the deposition is fixed, the deposition film of the portion where the wafer 3 and the boat rod 10a touch. There is a problem that the foreign material 4 is generated while falling.
따라서, 본 고안의 목적은 상기와 같은 문제점을 고려하여 안출한 것으로, 웨이퍼가 놓여지는 보트의 보트라드내에 웨이퍼받침볼을 상하이동가능하게 설치하여, 웨이퍼탑재시 웨이퍼와 보트라드가 닿지 않도록 조절하므로, 웨이퍼탈착시 발생하는 증착막 이물발생을 줄이도록 한 반도체증착장비의 웨이퍼 접촉면 조절장치를 제공함에 있다.Accordingly, an object of the present invention is to conceive in view of the above problems, by installing the wafer support ball in the boat rod of the boat on which the wafer is placed so as to move, so that the wafer and the boat rod does not touch when the wafer is mounted. In addition, the present invention provides a wafer contact surface control apparatus for semiconductor deposition equipment to reduce the generation of foreign matter on the deposition film during wafer detachment.
도 1은 종래의 기술에 의한 반도체증착장비의 증착상태를 나타내는 요부 확대도.1 is an enlarged view illustrating main parts of a deposition state of a semiconductor deposition apparatus according to the related art.
도 2 및 도 3은 종래의 기술에 의한 웨이퍼증착후 탈착동작에 의한 이물발생상태를 나타낸 단면도.2 and 3 are cross-sectional views showing a foreign matter generation state by the desorption operation after the deposition of the wafer according to the prior art.
도 4 및 도 5는 본 고안에 의한 반도체증착장비의 웨이퍼 접촉면 조절장치를 나타내는 것으로,4 and 5 shows the wafer contact surface control apparatus of the semiconductor deposition equipment according to the present invention,
도 4는 보트라드와 웨이퍼가 접촉한 상태를 나타내는 단면도.4 is a cross-sectional view showing a state in which a boat rod contacts a wafer.
도 5는 보트라드와 웨이퍼가 떨어진 상태를 나타내는 단면도.5 is a cross-sectional view showing a state in which the boat rod and the wafer are separated.
도 6 및 도 7은 본 고안에 의한 반도체증착장비의 웨이퍼 접촉면 조절장치를 확대해서 나타낸 것으로,6 and 7 is an enlarged view of the wafer contact surface control apparatus of the semiconductor deposition equipment according to the present invention,
도 6은 보트라드내의 웨이퍼받침볼이 상승하는 경우를 나타내는 배관도.6 is a piping diagram showing a case where the wafer support ball in the boat rod is raised.
도 7은 보트라드내의 웨이퍼받침볼이 하강하는 경우를 나타내는 배관도.Fig. 7 is a piping diagram showing a case where the wafer support ball in the boat rod descends.
(도면의 주요부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)
3 ; 웨이퍼 10 ; 보트3; Wafer 10; boat
10a ; 보트라드 21 ; 웨이퍼받침볼10a; Bodrad 21; Wafer Support Ball
22 ; 볼유동홈 31 ; 질소가스유입라인22; Ball flow groove 31; Nitrogen Gas Inlet Line
32 ; 진공펌프라인 33 ; 대기압라인32; Vacuum pump line 33; Atmospheric pressure line
34 ; 컨트롤러 31a,32a,33a ; 개폐밸브34; Controllers 31a, 32a, 33a; Valve
이러한, 본 고안의 목적은 웨이퍼를 보트내벽에 형성된 보트라드위에 올려놓고 증착공정을 진행하는 반도체 증착장비에 있어서, 상기 웨이퍼와 접촉되는 보트라드의 상면 일측에 볼유동홈과, 상기 볼유동홈내에 설치되어 유출입되는 가스의 압력에 의해 상승 및 하강동작을 하는 웨이퍼받침볼을 가지는 상하유동수단을 설치하고, 상기 보트내에 상하유동수단과 연결되도록 유압조절수단을 설치하여, 상기 유압조절수단에 의해 상하유동수단을 구동시키므로 웨이퍼와 보트라드의 간격을 조절하도록 한 것을 특징으로 하는 반도체증착장비의 웨이퍼 접촉면 조절장치를 제공함으로써 달성된다.The object of the present invention is a semiconductor vapor deposition apparatus in which a wafer is placed on a boat rod formed on an inner wall of a boat and a deposition process is performed, wherein a ball flow groove and a ball flow groove are formed on one side of an upper surface of the boat rod in contact with the wafer. Installed by the up and down flow means having a wafer support ball installed and moved up and down by the pressure of the gas flowing in and out, the hydraulic control means is installed to be connected to the up and down flow means in the boat, by the hydraulic control means It is achieved by providing a wafer contact surface control apparatus for semiconductor deposition equipment characterized in that for driving the flow means to adjust the gap between the wafer and the boatard.
상기 상하유동수단은 가스라인과 연결된 볼유동홈과, 상기 볼유동홈내에 설치되어 유출입되는 가스의 압력에 의해 상승 및 하강동작을 하는 웨이퍼받침볼로 구성되고, 상기 유압조절수단은 보트의 일측벽 내에 설치되며 각 보트라드로 연결된 질소가스유입라인과, 상기 질소가스유입라인과 근접되게 설치하여 보트라드를경유한 질소가스가 배출되도록 한 진공펌프라인과, 상기 진공펌프라인의 일측에 분지하여 설치한 대기압라인과, 상기 라인들의 개폐를 조절하는 컨트롤러로 구성된다.The up and down flow means comprises a ball flow groove connected to a gas line and a wafer support ball installed in the ball flow groove to move up and down by the pressure of the gas flowing in and out, the hydraulic control means is one side wall of the boat Nitrogen gas inlet line connected to each boat rod, a vacuum pump line installed close to the nitrogen gas inlet line to discharge nitrogen gas through the boat rod, and branched to one side of the vacuum pump line. One atmospheric pressure line and a controller for controlling the opening and closing of the lines.
이하, 본 고안에 의한 반도체증착장비의 웨이퍼 접촉면 조절장치를 첨부도면에 도시한 실시예에 따라서 설명한다.Hereinafter, the wafer contact surface control apparatus of the semiconductor deposition apparatus according to the present invention will be described according to the embodiment shown in the accompanying drawings.
도 4 및 도 5는 본 고안에 의한 반도체증착장비의 웨이퍼 접촉면 조절장치를 나타내는 것으로, 도 4는 보트라드와 웨이퍼가 접촉한 상태를 나타내는 단면도이고, 도 5는 보트라드와 웨이퍼가 떨어진 상태를 나타내는 단면도이며, 도 6 및 도 7은 본 고안에 의한 반도체증착장비의 웨이퍼 접촉면 조절장치를 확대해서 나타낸 것으로,4 and 5 show a wafer contact surface adjusting apparatus of the semiconductor deposition apparatus according to the present invention, Figure 4 is a cross-sectional view showing a state in which the boat rod and the wafer in contact, Figure 5 shows a state in which the boat rod and the wafer is separated. 6 and 7 are enlarged views of the wafer contact surface adjusting apparatus of the semiconductor deposition apparatus according to the present invention,
도 6은 보트라드내의 웨이퍼받침볼이 상승하는 경우를 나타내는 배관도이고, 도 7은 보트라드내의 웨이퍼받침볼이 하강하는 경우를 나타내는 배관도를 각각 보인 것이다.FIG. 6 is a piping diagram showing a case where the wafer bearing ball in the boat rod is raised, and FIG. 7 shows a piping diagram showing a case where the wafer bearing ball in the boat rod is lowered.
이에 도시한 바와 같이, 본 고안에 의한 반도체증착장비의 웨이퍼 접촉면 조절장치는 웨이퍼(3)를 보트(10)내벽에 형성된 보트라드(10a)위에 올려놓고 증착공정을 진행하는 반도체 증착장비에 있어서, 상기 웨이퍼(3)와 접촉되는 보트라드(10a)의 상면 일측에 상하유동수단(20)을 설치하고, 상기 보트(10)내에 상하유동수단(20)과 연결되도록 유압조절수단(30)을 설치하여, 상기 유압조절수단(30)에 의해 상하유동수단(20)을 구동시키므로 웨이퍼(3)와 보트라드(10a)의 간격을 조절하도록 한다.As shown in the drawing, the wafer contact surface control apparatus of the semiconductor deposition apparatus according to the present invention is a semiconductor deposition apparatus in which the deposition process is carried out by placing the wafer 3 on the boat rod 10a formed on the inner wall of the boat 10, The vertical flow means 20 is installed on one side of the upper surface of the boat rod 10a in contact with the wafer 3, and the hydraulic control means 30 is installed to be connected to the vertical flow means 20 in the boat 10. By driving the up and down flow means 20 by the hydraulic control means 30 to adjust the distance between the wafer 3 and the boat rod (10a).
상기 상하유동수단(20)은 가스라인과 연결된 볼유동홈(22)과, 상기 볼유동홈(22)내에 설치되어 유출입되는 가스의 압력에 의해 상승 및 하강동작을 하는 웨이퍼받침볼(21)로 구성된다.The up and down flow means 20 is a ball flow groove 22 connected to the gas line, and the wafer support ball 21 installed in the ball flow groove 22 to move up and down by the pressure of the gas flowing in and out It is composed.
상기 유압조절수단(30)은 보트의 일측벽 내에 설치되며 각 보트라드(10a)로 연결된 질소가스유입라인(31)과, 상기 질소가스유입라인(31)과 근접되게 설치하여 보트라드를 경유한 질소가스가 배출되도록 한 진공펌프라인(32)과, 상기 진공펌프라인(32)의 일측에 분지하여 설치한 대기압라인(33)과, 상기 라인들의 개폐를 담당하는 개폐밸브(31a)(32a)(33a)와, 상기 개폐밸브들을 조절하는 컨트롤러(34)로 구성된다.The hydraulic control means 30 is installed in one side wall of the boat and connected to each of the boat rods 10a and the nitrogen gas inflow line 31 and the nitrogen gas inflow line 31 so as to be installed via the boat rod. A vacuum pump line 32 for discharging nitrogen gas, an atmospheric pressure line 33 branched to one side of the vacuum pump line 32, and an opening / closing valve 31a or 32a for opening and closing the lines. 33a, and a controller 34 that controls the on-off valves.
이와 같이 구성된 본 고안에 의한 반도체증착장비의 웨이퍼 접촉면 조절장치의 작용효과를 설명한다.The effect of the wafer contact surface control device of the semiconductor deposition apparatus according to the present invention configured as described above will be described.
도 4와 같이 보트의 보트라드(10a)에 웨이퍼받침볼(21)이 장착된 상태에서 웨이퍼(3)가 보트에 탑재되면, 도 5와 같이 컨트롤러(34)에 의해 상기 웨이퍼받침볼(21)이 위쪽방향으로 상승하게 되어 웨이퍼받침볼(21)이 웨이퍼(3)를 지지하게 되므로, 웨이퍼(3)가 보트라드(10a)에 직접 접촉되지 않고, 웨이퍼(3)와 보트라드(10a) 사이에 간격이 생기게 된다. 이로 인해 웨이퍼(3)와 보트라드(10a)의 접촉면에서 발생되는 이물을 억제할수 있게 된다.When the wafer 3 is mounted on the boat while the wafer support ball 21 is mounted on the boat rod 10a of the boat as shown in FIG. 4, the wafer support ball 21 is controlled by the controller 34 as shown in FIG. 5. Since the wafer support ball 21 supports the wafer 3 because it rises in the upward direction, the wafer 3 is not directly in contact with the boat rod 10a, and between the wafer 3 and the boat rod 10a. There is a gap in the. This makes it possible to suppress foreign substances generated at the contact surface between the wafer 3 and the boat rod 10a.
웨이퍼받침볼(21)의 동작을 도 6 및 도 7을 참고로 좀더 상세히 설명하면 다음과 같다.The operation of the wafer support ball 21 will be described in more detail with reference to FIGS. 6 and 7 as follows.
보트내부에 두 개의 라인이 내장된다. 하나는 질소가스유입라인(31)이고, 다른 하나는 진공펌프라인(32)이다. 우선 웨이퍼받침볼(21)의 상승동작을 살펴보면, 질소가스유입라인(31)의 제1 개폐밸브(31a)를 열고 질소가스를 주입하면, 볼유동홈(22)내에 질소가스가 충진되게 되고, 웨이퍼받침볼(21)이 상승하게 된다. 이후 상기 웨이퍼받침볼(21)이 상승작용을 계속할 수 있도록 일정가스량을 계속 흘려준다.Two lines are built into the boat. One is a nitrogen gas inlet line 31 and the other is a vacuum pump line 32. First, the rising operation of the wafer support ball 21 is opened, when nitrogen gas is injected by opening the first open / close valve 31a of the nitrogen gas inflow line 31, nitrogen gas is filled in the ball flow groove 22. The wafer support ball 21 is raised. Thereafter, the wafer bearing ball 21 continuously flows a certain amount of gas so that the synergistic action can be continued.
다음으로 웨이퍼받침볼(21)의 하강동작을 살펴보면, 제1 개폐밸브(31a)와 제3 개폐밸브(33a)를 닫고 제2 개폐밸브(32a)를 열어 진공펌프에 의해 진공펌프라인(32)을 일정압력으로 펌핑함으로써 상기 웨이퍼받침볼(21)을 하강시킨다. 그런다음 제2 개폐밸브(32a)를 닫고 제3 개폐밸브(33a)를 열어 원래의 대기압 상태로 만들어 준다.Next, looking at the lowering operation of the wafer support ball 21, the first on-off valve 31a and the third on-off valve 33a is closed and the second on-off valve 32a is opened to open the vacuum pump line 32 by the vacuum pump. The wafer support ball 21 is lowered by pumping at a constant pressure. Then, the second on-off valve 32a is closed and the third on-off valve 33a is opened to bring it to its original atmospheric pressure.
이상에서 설명한 바와 같이, 본 고안에 의한 반도체증착장비의 웨이퍼 접촉면 조절장치는 웨이퍼를 보트내벽에 형성된 보트라드위에 올려놓고 증착공정을 진행하는 반도체 증착장비에 있어서, 상기 웨이퍼와 접촉되는 보트라드의 상면 일측에 상하유동수단을 설치하고, 상기 보트내에 상하유동수단과 연결되도록 유압조절수단을 설치하여, 상기 유압조절수단에 의해 상하유동수단을 구동시키므로 웨이퍼와 보트라드의 간격을 조절하도록 하므로, 웨이퍼탈착시 발생하는 증착막 이물발생을 줄이도록 한 효과가 있다.As described above, the wafer contact surface control apparatus of the semiconductor deposition apparatus according to the present invention is a semiconductor deposition equipment in which the deposition process is carried out by placing a wafer on the boat rod formed on the inner wall of the boat, the upper surface of the boat rod in contact with the wafer Since the vertical flow means is installed on one side and the hydraulic control means is installed in the boat so as to be connected with the vertical flow means, the hydraulic flow control means drives the vertical flow means, so that the gap between the wafer and the boat rod is adjusted, thus removing the wafer. It is effective to reduce the occurrence of foreign matter deposited on the deposited film.
Claims (2)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019980002329U KR200244931Y1 (en) | 1998-02-21 | 1998-02-21 | Device for controlling wafer contact of semiconductor deposition system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019980002329U KR200244931Y1 (en) | 1998-02-21 | 1998-02-21 | Device for controlling wafer contact of semiconductor deposition system |
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| Publication Number | Publication Date |
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| KR19990036451U KR19990036451U (en) | 1999-09-27 |
| KR200244931Y1 true KR200244931Y1 (en) | 2001-11-16 |
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| KR2019980002329U KR200244931Y1 (en) | 1998-02-21 | 1998-02-21 | Device for controlling wafer contact of semiconductor deposition system |
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