KR20020084511A - Putty ball for measuring electrode interval of process chamber for manufacturing semiconductor device - Google Patents

Abstract

PURPOSE: A putty ball for measuring an interval between electrodes of a process chamber for fabricating a semiconductor device is provided to prevent previously processing errors by measuring correctly moved distance values of an upper electrode and a lower electrode. CONSTITUTION: A guide hole(53) is formed at a center of the inside of a putty ball(50). A screw groove(54) is formed on an inner face of the guide hole(53). A lower body(51) of a cylindrical shape is formed to expose one side of the guide hole(53). A bar-shaped electrode(55) is formed in the inside of the lower body(51). An upper body(52) of a cylindrical shape is formed in the inside of the guide hole(53). A screw thread(57) is formed on a surface of the upper body(52). A saw-toothed electrode(58) is formed at a lower end portion of the upper body(52). A calculation portion calculates a moved distance value of the upper body(52) and sums up the moved distance value of the upper body(52) and a reference height value. A display portion(56) displays the calculated value.

Description

Putty ball for measuring electrode spacing of process chamber for semiconductor device

The present invention relates to a putty ball for measuring electrode spacing in a process chamber for manufacturing a semiconductor device, and more particularly, to a putty for measuring electrode spacing for a process chamber for manufacturing a semiconductor device, which can easily measure an interval between electrodes installed in a process chamber. It's about the ball.

In general, a semiconductor device is manufactured by repeatedly performing a series of semiconductor manufacturing processes such as an oxidation process, a photo process, an etching process, an ion implantation process, a deposition process, and a metal process on a wafer. In the semiconductor manufacturing process, the etching process is a wet etching process that exhibits isotropic etching characteristics by chemical reaction between chemical and wafer, and the reaction gas is converted into plasma state, where the cations, atomic groups, and neutrons in the plasma state By chemically reacting it can be classified into a dry etching process exhibiting anisotropic etching characteristics.

The dry etching process is a process for selectively removing a specific portion of the upper surface layer of the wafer through a pattern formed by a photolithography process, and according to the characteristics of the process equipment for forming plasma, RIE (Reactive) Ion Etching), MERIE (Magnetically Enhanced Reactive Ion Etching), ECR (Electron Cyclotron Resonance), TCP (Transformer Coupled Plasma) and the like.

Each of these process equipments may include an upper electrode serving as a cathode electrode and a lower electrode serving as an anode electrode to form an electric or magnetic field.

A typical dry etching apparatus for manufacturing a semiconductor device includes an etching chamber 10 in which a dry etching process using plasma is performed, as shown in FIG. 1. Here, the lower electrode 12 is installed inside the etching chamber 10, and the upper electrode 14 is disposed to face the lower electrode 12 and is spaced a predetermined distance upward. .

In addition, a predetermined portion of the lower electrode 12 is connected to a high frequency power source 20 for forming a magnetic field in the spaced space between the lower electrode 12 and the upper electrode 14. Here, the upper electrode 14 and the high frequency power supply 20 are grounded at the same point.

In addition, an etching gas supply line 22 for supplying an etching gas to be converted into a plasma state is formed at an upper portion of the etching chamber 10, and an internal pressure of the etching chamber 10 is formed below the etching chamber 10. The vacuum exhaust line 18 is connected to the vacuum pump 16 to control the formation.

Therefore, after the etching target wafer is positioned on the lower electrode 12 of the etching chamber 10, the internal air of the etching chamber 10 is forcibly pumped to the outside as the vacuum pump 16 is operated, thereby causing the etching chamber ( The internal pressure of 10) is evacuated.

Subsequently, an etching gas such as hydrogen bromide (HBr) and hydrogen chloride (HCl) is supplied into the etching chamber 10 through the etching gas supply line 22.

Next, in the high frequency power supply 20, an electric field is formed between the lower electrode 12 and the upper electrode 14 by applying a predetermined high frequency to the lower electrode 12, and inside the etching chamber 10 activated by the electric field. The etching gas is converted into a plasma state. At this time, the cation, the atomic group, and the neutron in the plasma state are in contact with the predetermined region of the wafer and chemically react to etch the predetermined region of the wafer.

In addition, the lower electrode 12 and the upper electrode 14 may be replaced when the upper electrode 14 is replaced or the lower electrode 12 is disassembled and assembled in the process of repeatedly performing the etching process as described above. In order to confirm / adjust the distance between the gaps), five putty balls 30 as shown in FIG. 2 are positioned on the lower electrode 12 of the etching chamber 10. Here, the putty ball 30 has a cylindrical upper body 34 is accommodated in the center of the inner receiving hole 36 formed in the inner center of the cylindrical lower body 32, as shown in FIG. The upper body 34 is moved by a distance equal to the distance between the lower electrode 12 and the upper electrode 14 of the etching chamber 10 by being protruded into the gap between the lower electrode 12 and the upper electrode 14. It is possible to simulate the separation distance of.

In addition, the five putty balls 30 positioned on the lower electrode 12 of the etching chamber 10 have a specific putty ball 30 positioned at the center of the lower electrode 12, as shown in FIG. 3. , The remaining four putty balls 30 are located in the periphery thereof.

Next, the upper body 34 of each of the putty ball 30 to the upper portion so that the upper body 34 can be in maximum contact with the lower surface of the upper electrode 14, the upper electrode 14 and the lower electrode ( After measuring the separation distance between the 12), each of the five putty balls 30 is released to the outside of the etching chamber (10).

Subsequently, the operator measures the distance between the lower body 32 bottom surface and the upper body 34 surface portion of the five putty balls 30 by using a manual vernier caliper manually, thereby lower electrode 12 and upper electrode. The separation between 14 is measured substantially. Here, the measured value measured by the putty ball 30 installed in the center of the lower electrode 12 is recorded as the actual separation distance value between the lower electrode 12 and the upper electrode 14, and the other four putty balls ( The measured value measured by 30 is used as data to check the horizontality of the lower electrode 12 and the upper electrode 14.

Subsequently, the separation distance and the horizontality between the lower electrode 12 and the lower electrode 14 of the etching chamber 10 are adjusted by the operator according to each measured value.

By the way, the operator measures the putty ball 30, which is simulated by the distance between the lower electrode 12 and the upper electrode 14 of the etching chamber 10, manually by using a vernier caliper, thereby increasing the reliability of the measured value. There is a problem that the reliability of the measured value is significantly lowered because the measured values are different from each other according to individual characteristics of each worker.

Therefore, the etching process proceeds immediately in a state in which the separation distance between the lower electrode 12 and the upper electrode 14 of the etching chamber 10 is poor, so that the intensity of the electric field formed in the etching chamber 10 is etched. There was a problem in that the etching failure of the wafer occurs different for each part of the chamber 10.

An object of the present invention, the distance between the upper electrode and the lower electrode of the etching chamber by allowing the display of the moving distance of the upper body on the putty ball for simulating the separation distance of the upper electrode and the lower electrode inside the etching chamber. The present invention provides a putty ball for measuring electrode spacing of a process chamber for manufacturing a semiconductor device, which can accurately prevent the process defect in advance.

Another object of the present invention, the height of the conventional simulated measured putty ball by allowing the display of the moving distance of the upper body on the putty ball for simulating the separation distance between the upper electrode and the lower electrode in the etching chamber It is to provide a putty ball for measuring the electrode spacing of the process chamber for semiconductor device manufacturing to improve the process efficiency by omitting the operation to measure the vernier caliper.

1 is a schematic configuration diagram of a general dry etching apparatus for manufacturing a semiconductor device.

2 is a perspective view of a putty ball for measuring electrode spacing in a process chamber for manufacturing a conventional semiconductor device.

3 is a plan view illustrating a method of measuring electrode spacing using a putty ball for measuring electrode spacing in a process chamber for manufacturing a semiconductor device according to the related art.

4 is a perspective view of a putty ball for measuring electrode spacing in a process chamber for manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 5 is a configuration diagram illustrating a state in which an electrode interval of a process chamber is displayed on a display unit using the putty ball shown in FIG. 4.

6 is a graph for explaining a waveform generated by the movement of the upper electrode of the putty ball shown in FIG.

FIG. 7 is a configuration diagram illustrating a display state of an electrode gap of a dry etching chamber on a display using a putty ball for measuring electrode gap in a process chamber for manufacturing a semiconductor device according to a second exemplary embodiment of the present invention.

※ Explanation of codes for main parts of drawing

10: etching chamber 12: lower electrode

14: upper electrode 16: vacuum pump

18: vacuum exhaust line 20: high frequency power supply

22: etching gas supply line 30, 50, 60: putty ball

32, 51, 61: lower body 34, 52, 62: upper body

36, 53: receiving hole 54: screw groove

55 bar electrode 56, 66 display unit

57: thread 58: serrated electrode

59: calculation unit 63: support unit

64: accommodation space 65: through hole

67: water-receiving sensor 68: calculation unit

In order to achieve the above objects, the putty ball for measuring electrode spacing of a process chamber for manufacturing a semiconductor device of the present invention includes: a lower body having a receiving hole formed in an inner center thereof; An upper body accommodated in the accommodation hole of the lower body and movable up and down; Moving distance detecting means for detecting the vertical movement distance of the upper body; A calculation unit for calculating a distance from the bottom of the lower body to the upper end of the upper body according to the moving distance of the upper body detected by the moving distance detecting means; And a display unit which displays the operation result calculated by the operation unit to the outside.

A screw groove may be formed on an inner surface of the accommodating hole of the lower body, and a screw thread coupled to the screw groove may be formed on an outer surface of the upper body.

The moving distance detecting means is recessed to a predetermined thickness from the outer surface of the upper body and the bar-shaped electrode inserted into the lower body so that one side is exposed to the accommodating hole of the lower body and spaced apart from the predetermined surface of the upper body. The bar electrode may be formed of a plurality of toothed electrodes having different polarities.

In addition, a through-hole is formed in the upper center of the lower body, a predetermined receiving space is formed on the lower side of the through-hole, the lower end of the upper body may be formed with a support portion in close contact with the receiving space of the lower body.

The moving distance detecting means may be formed of a water-receiving light sensor which is fixed to the ceiling of the receiving space of the lower body to emit light and then receives the light reflected from the support part.

In addition, the operation unit may be installed inside the lower electrode, and the display unit may be installed on the lower body surface.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 4 is a perspective view of a putty ball for measuring a distance between a lower electrode and an upper electrode of a dry etching chamber for manufacturing a semiconductor device according to a first embodiment of the present invention. FIG. 5 is a perspective view of the putty ball using FIG. It is a block diagram for demonstrating the state in which the measured value of electrode space | interval is displayed.

4 and 5, the putty ball 50 for measuring the electrode spacing of the process chamber for manufacturing a semiconductor device according to the first embodiment of the present invention includes an accommodating hole 53 having a screw groove 54 in an inner surface thereof. A cylindrical lower body 51 is formed in the central portion and has a bar electrode 55 (N-pole electrode) therein so that one side of the receiving hole 53 is exposed. Here, the material of the bar electrode 50 and the lower body 51 is different.

In addition, in the accommodation hole 53 of the lower body 51, a cylindrical upper body 52 having a threaded 57 formed on the surface thereof is fastened to a screw groove 54 formed on the inner surface of the accommodation hole 53. It is provided. Here, a plurality of tooth-shaped electrodes 58 (S-pole electrodes) recessed in a predetermined thickness at a lower end portion of the upper body 52 than the outer surface, and different in polarity from the bar electrode 55 of the lower body 51. The predetermined intervals are provided respectively. Here, the material of the serrated electrode 58 and the upper body 52 is different.

In addition, counting the number of wavelengths of the square wave generated by the intersection of the bar electrode 55 and the sawtooth electrode 58 by the movement of the upper body 52 inside or outside the lower body 51. By calculating the moving distance value of the upper body 52 according to the number of wavelengths of the stored square wave in advance, the height when the moving distance of the upper body 52 and the lower end of the pre-stored upper body 52 is located at the lowest point, that is, And an arithmetic unit 59 for summing reference heights.

On the surface of the lower body 51, a display unit 56 made of a liquid crystal display device such as an LCD (Liquid Crystal Display) is provided to display the calculation result of the calculation unit 59.

Therefore, after placing the electrode gap measuring putty ball 50 according to the present invention on the lower electrode of the etching chamber, the upper body 52 is inserted into the receiving hole 53 of the lower body 51 by screwing. When rotating the upper body 52, the upper body 52 is moved to the upper portion, the upper end of the upper body 52 is in close contact with the lower surface of the upper electrode of the etching chamber.

At this time, the plurality of serrated electrodes 58 provided on the lower surface of the upper body 52 and the bar-shaped electrode 55 inserted into the lower body 51 by the rotational movement of the upper body 52 are replaced with each other. As a result, a square wave as shown in FIG. 6 is generated.

And, the calculation unit 59 inherent in the lower body 51 receives the electrical signal according to the square wave from the bar electrode 55, the calculation unit 59 counts the number of wavelengths of the square wave, the number of wavelengths of the square wave. The distance from the bottom of the lower electrode to the top of the upper electrode according to the moving distance of the upper body 52 is calculated.

That is, if six serrated electrodes 58 are provided at the lower end of the upper body 52 at predetermined intervals, six square waves will be generated by one rotation of the upper body 52, and the upper body by one rotation. Since the distance that 52 is moved is stored in advance in the calculator 59, the distance of the upper body 52 can be easily calculated by counting the number of square waves. In addition, since the reference height, that is, the height when the lower end of the upper body 52 is positioned at the lowest point, is stored in the calculation unit in advance, the moving distance and the reference height of the upper body 52 are added to the upper electrode to form the upper electrode. It will calculate the interval up to.

In addition, the operation unit 59 displays the calculated operation value on the display unit 56 provided on the lower body 51 surface, so that the operator can easily lower the electrodes of the dry etching chamber according to the moving distance of the upper body 52. The distance from the bottom to the top of the upper electrode is accurately recognized.

Thereafter, the operator adjusts the electrode gap with reference to the calculation value of the calculation unit 59 displayed on the display unit 56.

FIG. 7 is a block diagram illustrating a state in which an electrode interval of a dry etching apparatus for manufacturing a semiconductor device is displayed on a display unit of a putty ball using a putty ball according to a second exemplary embodiment of the present invention.

7, the through hole 65 is formed at the center of the inner surface of the putty ball 60 for measuring the electrode spacing of the process chamber for manufacturing a semiconductor device according to the second embodiment of the present invention. It is provided with a cylindrical lower body 61 is formed in the lower receiving space 64).

The water-receiving light sensor 67 having a light emitting part and a light receiving part is installed in the ceiling of the accommodation space 64 of the lower body 61.

In addition, in the receiving space 64 of the lower body 61, the dish-shaped support portion 63 is in close contact with the inner surface of the receiving space 64 and receives and reflects the light emitted from the water repellent light sensor 67 again. The upper body 62 of the cylindrical shape provided in the lower end side part is provided.

In addition, the upper body corresponding to a time day value at which the light emitted from the water-receiving light sensor 67 at the same time as the upper body 62 is reflected by the support part 63 is returned to the inside or outside of the lower body 61. Since the movement distance of the 62 and the reference height, that is, the height when the lower end of the upper body 62 is positioned at the lowest point, are stored in advance, the movement distance and the reference height of the upper body 62 are summed from the bottom of the lower electrode. The calculating part 68 which calculates the space | interval to the upper electrode top is provided.

In addition, a display unit 66 made of a liquid crystal display such as an LCD is provided on the surface of the lower body 61 to display the calculation result of the calculation unit 68.

Therefore, after placing the electrode gap measuring putty ball according to the present invention on the lower electrode of the etching chamber, the upper body 62 is inserted into the receiving hole of the lower body to raise the upper body 62, the upper end of the etching chamber It is in close contact with the lower surface of the upper electrode.

At this time, when the light-receiving light sensor 67 fixed to the ceiling of the receiving space 64 of the lower body 61 emits light, the light hits the support 63 provided at the lower end of the upper body 62 and again. It is sensed by the light receiving portion of the light receiving light sensor 67.

Then, the water repelling light sensor 67 is applied to the operation unit 68 as a sensing signal for the time that light is emitted from the light emitting unit and the light received by the light receiving unit again, the water receiving light sensor 67 in the calculating unit 68 The reference height of the upper body 62 is added to the moving distance of the upper body 62 corresponding to the time data value consisting of the light emission time and the light receiving time of the light from the bottom of the lower body 61 to the top of the upper body 62. Calculate the interval of.

In addition, the operation unit 68 displays the calculated operation results on the display unit 66 provided on the surface of the lower body 61 so that the operator can easily move from the lower electrode bottom surface of the etching chamber according to the moving distance of the upper body 62. The distance to the top of the upper electrode is accurately recognized.

Thereafter, the operator adjusts the electrode gap with reference to the calculation value of the calculation unit 68 displayed on the display unit 66.

According to the present invention, by adding a function that can accurately measure the inter-electrode spacing of the process chamber to the putty ball, it is possible to accurately measure and control the electrode spacing immediately without using other mechanisms such as vernier calipers, thereby preventing process defects due to abnormal electrode spacing. It can be prevented, and the operation of measuring electrode spacing using other mechanisms such as vernier calipers is omitted, thereby improving the process efficiency.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and such modifications and modifications belong to the appended claims.

Claims (6)

A lower body in which a receiving hole is formed in the inner center; An upper body accommodated in the accommodation hole of the lower body and movable up and down; Moving distance detecting means for detecting the vertical movement distance of the upper body; A calculation unit for calculating a distance from the bottom of the lower body to the upper end of the upper body according to the moving distance of the upper body detected by the moving distance detecting means; And A display unit which displays an operation result calculated by the operation unit to the outside; A putty ball for measuring electrode spacing in a process chamber for manufacturing a semiconductor device, comprising: a. The electrode gap of the process chamber of claim 1, wherein a screw groove is formed on an inner surface of the receiving hole of the lower body, and a screw thread is formed on an outer surface of the upper body. Measuring putty ball. The method of claim 2, wherein the movement distance detecting means is recessed to a predetermined thickness than the outer surface of the upper body and the bar-shaped electrode inserted into the lower body so that one side is exposed to the receiving hole of the lower body of the upper body small It is provided on the surface of the government, the bar electrode and the putty ball for measuring the electrode spacing of the electrode chamber of the process chamber for manufacturing a semiconductor device, characterized in that it comprises a plurality of tooth-shaped electrodes different in polarity. According to claim 1, wherein the through-hole is formed in the upper center of the lower body and a predetermined receiving space is formed on the lower side of the through hole, the lower body side of the upper body is provided with a support portion in close contact with the receiving space of the lower body The putty ball for measuring the electrode spacing of the process chamber for manufacturing a semiconductor device. The semiconductor device as claimed in claim 4, wherein the moving distance detecting means comprises a water repellent light sensor which is fixed to the ceiling of the accommodation space of the lower body to emit light and then receives the light reflected from the support part. Putty ball for measuring electrode spacing in process chamber for device manufacturing. The putty ball of claim 3 or 5, wherein the operation unit is installed inside the lower electrode, and the display unit is installed on the lower body surface.