KR20020066051A - Complex Metal Film Formation on Polymer Resin Surface by ECR Coating Technology at Ambient Temperature - Google Patents

Abstract

PURPOSE: Provided is a method for producing a conductive high polymeric resin using ECR which can chemically vapor deposit a thin film three-dimensionally and easily control a physical property of the thin film according to the condition of vapor deposition. CONSTITUTION: The method comprises the steps of (i) forming an inert gas into high density plasma ion by ECR, (ii) accelerating the plasma ion and colliding the plasma on surface of the resin so as to infuse the plasma ion into the surface. The inert gas is argon and/or nitrogen gas. Alternatively, the method comprises the steps of (i) forming an inert gas into high density plasma ion by ECR, (ii) colliding a liquefied or gaseous organic metal precursor to form an ion of corresponding organic metal; and (iii) vapor depositing the ion on surface of the resin.

Description

Composite Metal Film Formation on Polymer Resin Surface by ERC Coating Technology at Ambient Temperature}

The present invention relates to a method for producing a conductive polymer resin,

Specifically, not only three-dimensional deposition is possible but also the physical properties of the thin film can be easily adjusted according to the deposition conditions, and a method for producing a conductive polymer resin using ECR (Electron Cyclotron Resonance) having a wide range of conductivity will be.

It is no exaggeration to say that we live in a sea of electromagnetic waves today. As well as electromagnetic waves for broadcasting and communication, many electromagnetic waves generated by various electronic devices, transmission lines, automobiles, and the like are affected. Therefore, electromagnetic interference (EMI) is defined as "the electromagnetic wave that is radiated or conducted impedes the function of other devices", which is like an adult disease in the electric and electronic field, and is said to be the fourth pollution. Due to the electromagnetic disturbance, the system function, the failure of the electronic device, or the malfunction cause a decrease in productivity and a considerable loss of life. Especially, a person who exposes the electromagnetic waves emitted from the terminal such as OA every day is called VDT (Video Display Terminal) syndrome. Physical abnormalities can be felt and EMI causes malfunctions of various control devices and robots in military and industrial sites. In general hospitals, high-tech medical equipment can also damage human life.

However, the electromagnetic wave weakens as it moves away from the medium generating it, and loses its influence. When it touches an object, it reflects, absorbs, and transmits according to the property of the object. Highly conductive metals with high conductivity can be considered as a material having excellent reflection and absorption functions against electromagnetic waves.

It is therefore an object of the present invention to provide an effective method for producing a shield sheet. Here, the shielding sheet is made of a conductive material such as a metal film to prevent EMI, and the other side of the shield sheet is an insulator, which is an inherent property of a polymer, and thus can play an electrical insulation role. And products that can achieve insulation effect at the same time.

As described above, shielding between PCB substrates, shielding of plastic housings, shielding of plastic cases, shielding of noise sources (Motors, etc.), EMI shielding of other radioactive noises, or mobile phones, laptops, In addition to communication equipment such as satellite receivers, electronic components composed of highly integrated circuits and finished semiconductor products or semi-finished products are packaged and transported in the process of human body contact and friction electricity. Even the minute electrostatic energy caused by the change may damage the silicon oxide film short circuit and the surface of the pin, which is a low resistance part of the electronic component, and therefore, a polymer resin for preventing electrostatic discharge (ESD) should be used.

Conventional techniques for manufacturing EMI and ESD-resistant polymer resins include transfer tools, sheets, plates, vacuum moldings, and plastic injection moldings for electronic components and semiconductors. In order to add conductivity to PE, PP, ABS, PET, PETG, PVC, HIPS, PBT, PPS) and engineering polymers (N6, N66, PC, PPO, PSU, PES, PEEK, PEI), carbon black, carbon fiber, Compounding compounded with stainless steel and nickel coated fiber or other additives to make the surface resistance in the range of 10 ⁰ ~ 10 ¹² Ωcm to prevent ESD and EMI (electromagnetic) Shielding) function (US Pat. No. 5,904,980, Korean Patent Publication No. 2000-017178, Japan Instrument 1999, 19 (5), pp 5-11).

However, polymer resins compounded with additives such as conductive carbon black, fibers, and metal coated fibers have the following disadvantages. Firstly, it is difficult to uniformly mix additives and polymer resins, secondly, high price of additives imported from foreign countries, and third, opaque product characteristics after compounding. There is a lot of difficulties in use due to the inconvenience caused by not being able to directly verify the serial number without opening the package, and the fourth problem, which is caused by the increase of the transportation logistics cost by the weight of the additive mixed.

In addition, there is a technology of forming an antistatic film by using a cation or anionic surfactant or an organic fluorine compound coating liquid and a conductive organic-inorganic hybrid coating liquid. However, since the soft plastic surface is different from the metal surface, there is little formation of an oxide layer and an adsorption layer of water. In general, the surface energy is considerably lower than that of metal, so the effects of flowability and uniformity on the coating liquid are not sufficiently exhibited (Korean Patent Publication No. 1999-018541).

On the other hand, even in the conventional technique by ion implantation, the surface modification technique by the ion beam has a strong effect, so that the surface of the polymer resin can be modified deeply, so that the hydrophilicity of the surface is lost. Although much can be solved, there are limitations in three-dimensional surface treatment with curvature due to the inherent characteristics of ion beam treatment. In addition, the technique of polymer surface modification by rf plasma requires high high voltage pulse bias applied due to the low plasma density and energy generated by rf, as well as negative (-) which generates glow discharge. Since the electrode must be present in the process chamber (chamber), the target polymer resin form is easily deformed during the process or difficulty in continuous process (Korea Patent 0217538).

Accordingly, the present invention has been made in order to eliminate or improve the problems of the technology related to the manufacturing method of the conventional conductive polymer resin as described above, the object of the present invention is to install the required negative electrode in the reaction chamber different from the case of rf plasma Since there is no restriction and the plasma of much higher density can be generated from the outside and injected into the chamber where the surface of plastic resin is modified, the three-dimensional chemical vapor deposition is possible evenly on the opposite side depending on the shape of the electrode. In order to provide a method for producing a conductive polymer resin using ECR that can be easily modified to have a wide range of conductivity, and to easily change the physical properties of the single and composite metal film by a modified thin film, chemical vapor deposition by injection have.

Another object of the present invention is an LCD module transport box, a chip tray, a semiconductor carrier tape, a semiconductor wafer transfer tape made of a polymer resin. The target polymer resin not only has electronic conductivity to objects such as printed circuit board transport boxes, electronic module product transport boxes, LCD thin film films, sheets and sockets for transporting semiconductors, tape rolls for semiconductor carriers, and antistatic products for automobile parts. Genie provides a way to maintain inherent transparency.

Another object of the present invention is to shield the polymer molding between the PCB substrate by a single continuous process, shielding the plastic housing, shielding of the plastic case, shielding noise sources (Motor, etc.), where other radioactive noise or static electricity is a problem The present invention provides a method for granting an electroconductive function for EMI shielding and ESD protection polymer resin.

It is still another object of the present invention to provide a method for performing surface deposition imparting an electroconductive function for an EMI-resistant polymer resin by three-dimensional chemical deposition of a polymer sheet or film by a single continuous process.

1 is a schematic diagram of an apparatus for explaining a method for forming an ECR plasma according to the present invention to form a metal thin film on a plastic surface even at room temperature by electromagnetic field acceleration.

Figure 2 is a graph showing the results of measuring the resistance of the metal film formed by chemical vapor deposition on the polymer resin of 100 × 100 mm size in accordance with the present invention.

Figure 3 is a view showing the results of analyzing the surface composition of the composite metal film formed by applying a chemical vapor deposition method and the electrode sputtering method to the polymer resin at the same time by Auger.

In order to achieve the above object, according to the present invention comprises the steps of forming an inert gas into a high-density plasma ions by ECR, and accelerating the plasma ions to impinge on the surface of the polymer resin to inject A method for producing a conductive polymer resin using ECR is provided.

The inert gas is argon and / or nitrogen gas, and the acceleration step of the plasma ions is an acceleration step by a magnet. Preferably, the acceleration step of the plasma ions is an acceleration step by a magnet and an acceleration by DC high voltage or pulse voltage. It includes two stages of acceleration.

In addition, according to the present invention, the step of forming an inert gas into a high-density plasma ion by ECR; And depositing the organometallic ions generated by collision with the plasma ions on the surface of the polymer resin by introducing an organometallic precursor in a liquid or gaseous state onto the surface of the polymer resin. A method is provided.

The organometallic precursor is Li (acetate), (CH ₃ ) ₃ Al, (C ₂ H ₅ ) ₃ Al, (C ₄ H ₉ ) ₃ Al, (CH ₃ ) ₃ Bi, (C ₂ H ₅ ) ₃ Sb , (C ₃ H ₇ ) ₃ Sb, Ag (trifluoroacetate), Ag (acetate), (C ₂ H ₅ O) ₄ Si, (C ₂ H ₅ ) ₃ SiH, (CH ₃ ) ₄ Sn, (C ₂ H ₅ ) ₄ Sn, Cu (hfac) 2, Cu (acac), Cu (DPM), (hfac) Cu (I) MP, (Hfac) Cu (I) (DMB), ( COD) Pt (CH ₃ ) ₂ , Pt (CH ₃ ) ₂ (CH ₃ NC) ₂ , Pd (allyl) ₂ , Ni (C ₅ H ₅ ) ₂ , Ni (CO) ₄ , Pt (hfac) ₂ It is one kind.

The polymer resin is a general polymer resin selected from PS, PE, PP, ABS, PET, PETG, PVC, HIPS, PBT, PPS, N6, N66, PC, PPO, PSU, PES, PEEK, PEI, and engineering polymers selected from, and It is any one selected from the group consisting of a polymer resin compounded with glass fibers in the engineering polymer (compound).

In addition, during the plasma deposition of the organometallic ions, it is preferable to simultaneously perform deposition by electrode sputtering.

The present invention is a method in which a negative high DC voltage or a high frequency pulse voltage of about 0.05 to 50 keV is applied to the gas introduced by using ECR to form high density high energy plasma ions. The present invention relates to a method of introducing a gas and introducing high density, high energy plasma ions formed by ECR to the specimen surface in a vacuum chamber to change the surface conductivity of the polymer resin to 10 ⁶ to 10 ⁸ Ω · cm.

Secondly, the present invention relates to a method of introducing an organometallic compound to form high-density plasma ions and chemically depositing a metal film, thereby changing the surface properties of the target polymer resin into electron conductivity in the range of 10 ⁰ to 10 ⁴ Ω · cm. .

Third, by introducing an organometallic compound in a liquid or gaseous state and installing an electrode in a vacuum chamber, a metal ion ionized by plasma and a metal ion sputtered from the electrode are simultaneously chemically deposited on the surface of the polymer resin to form a composite metal film. The method relates to a method that can freely control the conductivity of the polymer resin and the physical properties of the membrane according to the reaction conditions as necessary.

ECR is a resonance phenomenon that occurs when the rotational frequency caused by the electromagnetic field matches the frequency of the microwave applied to the power source. In other words, when a magnetic field is applied to the discharge region of the microwave, electrons undergo a cyclotron. When the rotation frequency coincides with the frequency of the electric field, resonance occurs and the energy of the electron is maximized. In order for ECR to occur, the rotational frequency of the electron (ω _c : cyclotron frequency) must match the frequency of the electric field. Therefore, ω _c can be expressed as (1) and the value to satisfy this should be 2.45 GHz, where the density of magnetic flux (B) should be maintained at 875 Gauss.

ω _c = … … … … … … … … … … … … (One)

Here, e (charge amount) = 1.6x10 ^-19 columb, m _e (electron mass) = 9.11x10 ^-31 kg, B is magnetic flux density.

The electrons passing through the ECR layer formed in the narrow region have high energy and flow to the target sample along the self-electric field generated by the magnetic and electromagnetic fields. The degree of ionization of the plasma can be varied by adjusting the discharge pressure, flow rate and voltage.

In addition, the high-voltage direct current for the plasma cation acceleration used in the present invention is rectified by four stages of the rectifier diode composed of a boost circuit to 15,000 Volt (20 mA current) generated in the boost transformer to four 471 pF / 30 kV capacitors. It is charged and a DC voltage of about 60kV is generated, which is four times the input value of the total charge of each capacitor. The expected waveform of the voltage generated here is thought to form a DC negative voltage containing a few percent ripple ratio formed by a negative voltage curve curve at 60 Hz rather than a square wave generated from a pulse bias. . By connecting the contact of the electrode generated from negative DC high voltage or high voltage pulse with the grid made of stainless steel network installed in the ECR process chamber, it is located at the point where ECR plasma is induced. The cations in the plasma formed by the ECR are collected around the cathode (-) formed in the grid and accelerated to inject or chemically deposit the cations in the plasma.

Therefore, the action of the present invention is that the injected nitrogen or argon gas forms a high-density plasma by the ECR phenomenon and the ions accelerated by the magnetic field are accelerated by the induction of the high-voltage cathode grid and ion implantation and chemical vapor deposition onto the polymer resin surface. By surface modification, plastics have electronic conductivity in the range of 10 ⁰ to ^{10 10} Ω · cm to provide EMI shielding and ESD protection.

Hereinafter, with reference to the accompanying drawings and the present invention will be described in more detail.

1 is a schematic diagram of an apparatus for explaining a method of modifying a plastic surface by electromagnetic field acceleration by causing an introduction gas to form plasma using ECR.

In Figure 1, the microwave generator (microwave generator) (1) manufactured by the US Astex (model S-100), the maximum output 1kw, the stability is 0.1%, the ripple (ripple) does not exceed the maximum 1%. Power display (18), which measures the output of incident and reflected waves, circulators and dummy loads (2) to prevent returning waves from damage to the generator, microwave tuning ( 3-stub tuner (4) for microwave tuning, and a directional coupler that changes the direction and mode of the microwave and finally leads to the ECR chamber and produces a uniform plasma. directional coupler 3, symmetric plasma coupler 5, and the like.

The pipe connected from the microwave (1) to the symmetric plasma coupler (5) is called a wave guide. The material is copper and the special coating is applied to the inside to effectively deliver the microwave waveform. do. The injection gas 6 may use an oxidizing gas or an inert gas and reaches the ECR chamber 9 through which the ECR phenomenon occurs through the mass flow meter 7, where two electromagnets 8 and 10 are 2.5 and 5 kw, respectively. Located at the top and bottom of the chamber, there is a viewing window in the center to check the plasma state.

The electromagnet coils of the two electromagnets 8 and 10 are made of hollow copper wires with empty interiors to remove heat generated during operation by flowing coolant into the interior space. In addition, a cylindrical structure made of quartz is provided inside the ECR chamber 9 to prevent a phenomenon that the impurity molecules adsorbed to the chamber wall are desorbed and contaminated. At the bottom thereof, a process chamber 11 in which surface modification of the target plastic takes place is attached.

The negative DC high voltage grid 12 used for the acceleration of ions is connected to the resistor 14, the rectifier 15, the boost transformer 16, and the target plastic sample is located between the grids 12. have. The process chamber 11 is controlled by the opening degree of the throttle valve 19 by the pressure sensor Baratron gauge 17 and the power supply & display 18. Pressure is controlled. The vacuum equipment connected here is a turbo-molecular pump (20), roots blower (21) and chemical trap (22), filter (23). The vacuum equipment consisting of a mechanical vacuum pump 24 controls the pressure of the chamber to about 10 ^-5 torr.

<Example 1>

ECR power 400W, Magnet 1 (top) 140 Ampere, Magnet 2 (bottom) 120 Ampere, Reactor pressure 4.5mtorr, DC voltage of 50kV on grid and argon, nitrogen flow range of 20sccm After putting three kinds of PVC on the specimen holder and ion-implanting at room temperature for 30 minutes, the electrical conductivity was measured on the surface of 100 × 100 mm specimen. As shown in Table 1, the surface conductivity was 10 ¹² to 10 ¹⁴ After treatment at Ωcm, it was changed to 10 ^{6-10 8} Ω / cm.

Polymer resin type Microwave Voltage (W) Working pressure (mTorr) DC '-' bias (kV) Resistance (Ωcm) PE 400 4.5 50 1.0x 10 ^-6 PC 400 4.5 50 1.0x 10 ^-6 PVC 400 4.5 50 1.0x 10 ^-6

※ N ₂ atmosphere

<Example 2>

ECR power 700W, magnet 1 (top) 170 Ampere, magnet 2 (bottom) 120 Ampere, reactor pressure 45mtorr, DC voltage of 50kV on grid and organometallic gas, argon, hydrogen flow range 300 ~ 200sccm Three kinds of plastic PC, PE, and PTFE were placed on the specimen holder and chemically deposited at room temperature for 30 minutes with an organometallic precursor, and then the electrical conductivity was measured on the surface of the specimen having a size of 100 × 100 mm. The surface electrical conductivity of the deposited film could be controlled in the range of 10 ⁰ to 10 ⁴ Ω / cm ² .

Polymer resin type Microwave Voltage (W) Working pressure (m Torr) DC '-' bias (kV) H ₂ / Ar Ratio (hfac) Cu (DMB) Resistance (Ωcm) PE 700 45 50 2 69.6 PET 700 45 50 2 71.1 PP 700 45 50 2 68.02 PTFE 700 45 50 2 66.35 PVC 700 45 50 2 72.82 PE 300 45 50 2 69.55 PE 700 45 50 One 69.55

FIG. 2 is a graph showing the resistance of the composite metal film prepared by the above method using a DC voltage-current standard meter. The resistance was 70 Ω · cm.

Figure 3 shows the results of the Auger analysis of the composition of the composite metal film chemically deposited on the polymer resin by the above method, the composition of the film is 3.5% Cu contained in the precursor, C 25%, F 3%, O 2.5%, electrode A composite film composed of 2% Zn and 63% Ni sputtered from the vagina was found to have a resistance of 69.6 Ω · cm.

According to the present invention, the high-density ions generated by using ECR on the surface of a molded product, a sheet made of polymer resin, and a film are first accelerated by a magnet and then accelerated to secondary ions through a grid by using direct current high voltage or pulse voltage. The surface modification can be uniformly performed three-dimensionally on the surface of the target polymer resin.

Therefore, it is more effective and inexpensive than existing carbon composites, and can have conductive characteristics that can exhibit EMI shielding and ESD prevention effects, and form conductive regions with lower energy than rf or ion beam ion implantation methods, and 3D. There is an advantage in proper surface chemical vapor deposition and continuous process.

Claims (8)

Forming an inert gas into high density plasma ions by ECR; And Accelerating the plasma ions and impinging the plasma ions on the surface of the polymer resin to inject the conductive polymer resin. The method of claim 1, wherein the inert gas is argon and / or nitrogen gas. The method of claim 1, wherein the accelerating step of the plasma ions is an accelerating step by a magnet. The method of claim 1, wherein the acceleration of the plasma ions comprises two steps of acceleration by a magnet and acceleration by a DC high voltage or pulse voltage. Forming an inert gas into a high density plasma ion by ECR; And A method of manufacturing a conductive polymer resin using an ECR comprising introducing a liquid or gaseous organometallic precursor and depositing the organometallic ions generated by collision with the plasma ions on the surface of the polymer resin. . The method of claim 5, wherein the organometallic precursor is Li (acetate), (CH ₃ ) ₃ Al, (C ₂ H ₅ ) ₃ Al, (C ₄ H ₉ ) ₃ Al, (CH ₃ ) ₃ Bi, (C ₂ H ₅ ) ₃ Sb, (C ₃ H ₇ ) ₃ Sb, Ag (trifluoroacetate), Ag (acetate), (C ₂ H ₅ O) ₄ Si, (C ₂ H ₅ ) ₃ SiH, (CH ₃ ) ₄ Sn, (C ₂ H ₅ ) ₄ Sn, Cu (hfac) 2, Cu (acac), Cu (DPM), (hfac) Cu (I) MP, (Hfac) Cu (I) (DMB), (COD) Pt (CH ₃ ) ₂ , Pt (CH ₃ ) ₂ (CH ₃ NC) ₂ , Pd (allyl) ₂ , Ni (C ₅ H ₅ ) ₂ , Ni (CO) ₄ , Pt (hfac) ₂ A method for producing a conductive polymer resin using ECR, characterized in that the species. The method of claim 5, wherein the polymer resin is a general-purpose polymer resin selected from PS, PE, PP, ABS, PET, PETG, PVC, HIPS, PBT, PPS, N6, N66, PC, PPO, PSU, PES, PEEK, PEI The method of manufacturing a conductive polymer resin using ECR, characterized in that any one selected from the group consisting of an engineering polymer selected from, and a polymer resin compounded with glass fibers in the engineering polymer. The method of manufacturing a conductive polymer resin using ECR according to claim 5, wherein the deposition by the electrode sputtering is performed simultaneously during plasma deposition of the organometallic ions.