KR20020057228A - Method for producing reflect lcd using of half tone patterning - Google Patents
Method for producing reflect lcd using of half tone patterning Download PDFInfo
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- KR20020057228A KR20020057228A KR1020000087518A KR20000087518A KR20020057228A KR 20020057228 A KR20020057228 A KR 20020057228A KR 1020000087518 A KR1020000087518 A KR 1020000087518A KR 20000087518 A KR20000087518 A KR 20000087518A KR 20020057228 A KR20020057228 A KR 20020057228A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
Abstract
Description
본 발명은 하프 톤 패터닝을 이용한 반사형 LCD의 반사판 제조방법에 관한 것으로, 보다 상세하게는 저소비, 경량화가 가능한 반사형 LCD에서 광산란 특성을 부여키 위하여 반사판에 요철을 형성한 하프 톤 패터닝을 이용한 반사형 LCD의 반사판 제조방법에 관한 것이다.The present invention relates to a reflective plate manufacturing method of a reflective LCD using halftone patterning, and more particularly, reflection using halftone patterning in which irregularities are formed on the reflective plate in order to give light scattering characteristics in a reflective LCD that can be consumed at low cost and weight. It relates to a method for manufacturing a reflector of a type LCD.
주지된 바와 같이, 최근에는 일반적으로 박막 트랜지스터(TFT: Thin Flat Transistor)-액정 디스플레이(LCD; Liquid Crystal Display)는 휴대형 단말기기의 정보 표시창, 노트북 PC의 화면표시기, 랩탑 컴퓨터의 모니터 등의 정보표시장치로 사용되고 있다. 특히, 액정 디스플레이는 기존의 브라운관형 모니터(CRT)를 대체할 수 있는 디스플레이장치로 산업상 그 활용도는 매우 높아지고 있는 실정이다.As is well known, in recent years, a thin flat transistor (TFT) -liquid crystal display (LCD) is generally used to display information such as information display windows of portable terminal devices, screen displays of notebook PCs, monitors of laptop computers, and the like. It is used as a device. In particular, the liquid crystal display is a display device that can replace the conventional CRT monitor, the utilization of the industry is very high.
종래, 반사판의 요철을 제조하는 방법은 절연막을 이용하여 1차 요철을 형성하고 그 위에 다시 절연막을 도포하여 곡선형의 요철 구조를 만들어 내는 방법을 사용해왔다.Conventionally, the method of manufacturing the unevenness | corrugation of a reflecting plate has used the method which forms primary unevenness | corrugation using an insulating film, and apply | coats an insulating film again on it, and produces a curved uneven structure.
도 1a, 1b, 1c에 도시된 바와 같이, 절연막(2) 또는 레진을 사용하여 두차례에 걸쳐 절연막 도포공정을 처리한 후 요철 형태의 구조를 형성한다. 즉, 최초 절연막(2)을 형성시킨 다음, 그 상면에 다시 다른 2차 절연막(4)을 도포한다.As shown in FIGS. 1A, 1B and 1C, an insulating film coating process is performed twice using an insulating film 2 or a resin to form a concave-convex structure. That is, after forming the initial insulating film 2, another secondary insulating film 4 is applied to the upper surface again.
위의 공정 후, 반사도가 높은 알루미늄을 증착하여 반사판(6)을 증착하여 형성한다. 그러나, 상기한 반사판의 요철 제조기술은 요철을 별도로 형성해야 하는 추가 공정의 문제와 요철 구조의 프로파일(Profile) 제어에 어려움이 있었다.After the above process, the reflective plate 6 is formed by depositing aluminum having high reflectivity. However, the above-described irregularities manufacturing technology of the reflecting plate has a problem of an additional process of forming irregularities separately and difficulty in controlling the profile of the irregularities structure.
본 발명은 상기한 바와 같은 문제점을 개선하기 위해 안출한 것으로, 한 번의 노광으로 마스크의 투과율에 따라 여러 단계의 홀을 형성할 수 있는 하프 톤 패터닝(또는 2단계 노출이라고도 함) 기술을 이용하여 반사판의 광산란에 중요한 요소인 요철을 원스텝으로 형성할 수 있도록 한 하프 톤 패터닝을 이용한 반사형 LCD의 반사판 제조방법을 제공함에 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the problems described above, and reflector using halftone patterning (also referred to as two-stage exposure) technology that can form holes in multiple stages according to the mask's transmittance in one exposure. An object of the present invention is to provide a reflective LCD manufacturing method of a reflective LCD using halftone patterning to form irregularities, which are important factors for light scattering, in one step.
도 1a, 1b, 1c는 종래의 반사판 제조공정을 나타내는 도면,1A, 1B, 1C are views showing a conventional reflector plate manufacturing process,
도 2는 본 발명의 일실시예에 따른 반사형 LCD 픽셀 구조를 나타내는 도면,2 is a view showing a reflective LCD pixel structure according to an embodiment of the present invention;
도 3은 본 발명의 일실시예에 따른 동일 투과율의 슬릿 마스크 구조를 나타내는 도면,3 is a view showing a slit mask structure of the same transmittance according to an embodiment of the present invention,
도 4a는 본 발명의 다른 실시예에 따른 동일 투과율 마스크 이용시 PSM 마스크 구조를 나타내는 도면,4A illustrates a PSM mask structure when using the same transmittance mask according to another embodiment of the present invention;
도 4b는 본 발명의 다른 실시예에 따른 다른 투과율의 슬릿 마스크 구조를 나타내는 도면,4B is a view showing a slit mask structure of another transmittance according to another embodiment of the present invention;
도 5는 본 발명의 다른 실시예에 따른 요철형 반사판의 단면을 도시한 도면이다.5 is a cross-sectional view of an uneven reflective plate according to another exemplary embodiment of the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
2:1차요철, 4:2차 절연막,2: primary unevenness, 4: secondary insulating film,
6:알루미늄 반사판, 8:소스/드레인전극,6: aluminum reflector, 8: source / drain electrodes,
10:액티브레이어, 12:게이트라인,10: active layer, 12: gate line,
14:반사판, 16:요철,14: reflector, 16: uneven,
18:비아홀, 20:마스크,18: Via Hole, 20: Mask,
22:PSM, 24:페시베이션레이어.22: PSM, 24: passivation layer.
상기한 바와 같은 목적을 달성하기 위한 본 발명의 바람직한 일실시예에 따르면, 반사형 TFT-LCD 패널의 어레이 패널을 제작하는데 있어서, TN 모드로 게이트, 액티브, 소스/드레인, 패시베이션을 통해 요철을 형성하고, 그 상면에 상부 픽셀을 겸한 반사판층을 형성하는 것을 특징으로 하는 하프 톤 패터닝을 이용한 반사형 LCD의 반사판 제조방법이 제공된다.According to a preferred embodiment of the present invention for achieving the above object, in manufacturing an array panel of a reflective TFT-LCD panel, the irregularities are formed through the gate, active, source / drain, passivation in the TN mode A reflective plate manufacturing method of a reflective LCD using halftone patterning is provided, wherein a reflective plate layer serving as an upper pixel is formed on an upper surface thereof.
바람직하게, 패시베이션을 겸한 요철은 그 구조를 형성하기 위해 하프 톤 마스크를 사용하여 1회 마스크 공정으로 제조하는 것을 특징으로 한다.Preferably, the unevenness combined with passivation is produced by a one-time mask process using a halftone mask to form the structure.
보다 바람직하게, 패시베이션을 겸한 요철은 레진 및 감광성 물질로 제조하는 것을 특징으로 하며, 상기 패시베이션과 요철은 각각 다른 층으로 형성되는 것을 특징으로 한다.More preferably, the unevenness combined with passivation is made of a resin and a photosensitive material, and the passivation and unevenness are each formed of a different layer.
한편, 반사형 TFT-LCD PANEL의 어레이 패널을 제작하는데 있어서 TN 모드로 게이트, 액티브, 소스/드레인, 패시베이션을 통해 형성되는 요철이 상부 픽셀과 반사판을 겸한 것을 특징으로 하는 하프 톤 패터닝을 이용한 반사형 LCD의 반사판 제조방이 제공된다.On the other hand, in manufacturing the array panel of the reflective TFT-LCD PANEL, the reflection type using halftone patterning is characterized in that the irregularities formed through the gate, active, source / drain and passivation in the TN mode serve as the upper pixel and the reflector. Provided is a reflecting plate manufacturing room for an LCD.
바람직하게, 상기 요철은 감광성 매탈 물질을 사용하는 것을 특징으로 하는 하프 톤 패터닝을 이용한 반사형 LCD의 반사판 제조방법이 제공된다.Preferably, the irregularities are provided with a reflective plate manufacturing method of a reflective LCD using halftone patterning, characterized in that using a photosensitive metal material.
이하, 본 발명에 따른 하프 톤 패터닝을 이용한 반사형 LCD의 반사판 제조방법에 관하여 첨부도면을 참조하여 상세하게 설명한다.Hereinafter, a method of manufacturing a reflector of a reflective LCD using halftone patterning according to the present invention will be described in detail with reference to the accompanying drawings.
본 발명은 게이트/ 액티브/소스 및 드레인/ 레진을 통한 요철 형성/ Al(화소)을 순차적으로 형성하여 반사형 LCD의 반사판을 제조하는 기술이다.The present invention is a technique for manufacturing a reflective plate of a reflective LCD by sequentially forming the irregularities formed through the gate / active / source and drain / resin / Al (pixel).
보다 상세하게, 저전압, 저소비전력, 경량화 요구에 따른 LCD 방향으로 반사형 LCD가 개발되었다. 반사형 LCD에서 반사판을 어레이 패널에 형성할 때 광산란 특성을 부여하기 위해 반사판에 요철을 형성한다. 본 발명은 요철을 형성하기 위한 어레이공정에 관한 것으로 동일 층에서 각기 다른 높이의 요철을 형성하고자 하는 모든 설계에 적용 가능하다.In more detail, a reflective LCD has been developed in the LCD direction according to low voltage, low power consumption, and light weight demand. In the reflective LCD, irregularities are formed in the reflecting plate to give light scattering characteristics when the reflecting plate is formed in the array panel. The present invention relates to an array process for forming irregularities, and is applicable to all designs to form irregularities of different heights in the same layer.
도 2는 본 발명의 일실시예에 따른 반사형 LCD 픽셀 구조를 나타내는 도면이다. 이를 참조하면, 소스 및 드레인(8)까지는 기존 5마스크와 동일하게 진행, 형성한 후 비아 홀(18) 층에서 레진을 이용해 요철(16)을 형성한다. 이때, 마스크는 하프 톤(Half Tone)을 형성할 수 있도록 별도로 제작된 마스크를 사용하게 되는 데, 각각의 요철(16) 크기와 요철(Hole; 16)의 높이를 동일하게 하기 위해서는 일정 투과율을 유지할 수 있는 PSM(기존 Phase Shift Mask)를 사용하는 것이 유리하며, 각기 다른 높이와 크기를 갖는 요철(16)을 형성하기를 원하면 슬릿 또는 모자이크 구조로 투과율의 차이를 갖도록 형성한 마스크를 사용하는 것이 유리하다.2 is a view showing a reflective LCD pixel structure according to an embodiment of the present invention. Referring to this, the source and the drain 8 are processed and formed in the same manner as the existing 5 masks, and then the unevenness 16 is formed using the resin in the via hole 18 layer. At this time, the mask is to use a mask made separately to form a half-tone (half tone), to maintain a constant transmittance in order to equalize the size of each concave-convex (16) and the height (Hole) (16) It is advantageous to use a conventional phase shift mask (PSM), and if you want to form irregularities 16 having different heights and sizes, it is advantageous to use a mask formed to have a difference in transmittance with a slit or mosaic structure. Do.
미 설명부호 10은 액티브 레이어이고, 12는 게이트 라인, 14는 레진 요철상면에 알루미늄을 형성한 반사판이다.Reference numeral 10 is an active layer, 12 is a gate line, and 14 is a reflecting plate on which aluminum is formed on the top surface of the resin bumps.
이때, 레진 공정에서는 레진 코팅후 (약 2∼3μm) 도 3과 같은 마스크를 이용하여 요철(16)을 형성한다. 레진을 이용한 요철(16) 형성과정이 끝나면 기존의 5마스크와 같이 비아 홀(18)을 제외한 유리 전면에 레진이 남아있게 된다.In this case, in the resin process, after the resin is coated (about 2 to 3 μm), the unevenness 16 is formed using a mask as shown in FIG. 3. After the process of forming the concave-convex (16) using the resin, the resin remains on the entire glass surface except the via hole 18 as in the conventional five masks.
또한, 상기 예시한 바와 같이 요철(16)의 깊이 및 요철(16)의 프로파일(반사각 조절)을 제어하기가 용이해진다.In addition, as illustrated above, it becomes easy to control the depth of the unevenness 16 and the profile (reflection angle adjustment) of the unevenness 16.
도 4a는 본 발명의 다른 실시예에 따른 동일 투과율 마스크 이용시 PSM 마스크 구조를 나타내는 도면이며, 도 4b는 본 발명의 다른 실시예에 따른 다른 투과율의 슬릿 마스크 구조를 나타내는 도면이다.4A is a view showing a PSM mask structure when using the same transmittance mask according to another embodiment of the present invention, Figure 4b is a view showing a slit mask structure of another transmittance according to another embodiment of the present invention.
이를 참조하면, 이는 마스크 디자인에 변형을 가하여 요철(16)의 깊이 및 요철(16)의 반사각 조절이 가능한 프로파일의 제어를 가능하게 한 것으로, 도 4a는 요철(16)과 비아홀(18)의 상면에 PSM(Phase Shift Mask; 22)이 형성되고, 그 상면에 마스크(20)가 부착된 것이다. 도 4b는 요철(16)과 비아홀(18)의 상면에 슬릿이 형성된 슬릿 마스크(20)가 형성된 것이다.Referring to this, it is possible to control the profile that can adjust the depth of the concave-convex (16) and the reflection angle of the concave-convex (16) by modifying the mask design, Figure 4a is the top surface of the concave-convex (16) and the via hole 18 PSM (Phase Shift Mask) 22 is formed on the upper surface of the mask 20 is attached. 4B illustrates a slit mask 20 in which slits are formed on upper surfaces of the uneven 16 and the via hole 18.
도 5는 본 발명의 다른 실시예에 따른 요철형 반사판의 단면을 도시한 도면이다. 이를 참조하면, 비아홀(18)의 양측면에 페시베이션 레이어(24)가 형성되고,그 상면에는 감광성 메탈을 재료로 한 요철형의 반사판(26)이 형성되어 그 반사판(26)을 통한 광산란도가 증대되게 된다.5 is a cross-sectional view of an uneven reflective plate according to another exemplary embodiment of the present invention. Referring to this, the passivation layer 24 is formed on both sides of the via hole 18, and the upper surface of the via hole 18 is formed with a concave-convex reflection plate 26 made of a photosensitive metal material so that light scattering through the reflection plate 26 is achieved. Will be increased.
한편, 본 발명의 실시예에 따른 하프 톤 패터닝을 이용한 반사형 LCD의 반사판 제조방법은 단지 상기한 실시예에 한정되는 것이 아니라 그 기술적 요지를 이탈하지 않는 범위내에서 다양한 변경이 가능하다.On the other hand, the reflective plate manufacturing method of the reflective LCD using the half-tone patterning according to an embodiment of the present invention is not limited to the above-described embodiment, various modifications can be made within the scope not departing from the technical gist.
따라서, 상기한 본 발명에 따른 하프 톤 패터닝을 이용한 반사형 LCD의 반사판 제조방법에 의하면, 절연막이나 레진을 이용해 반사형 LCD의 반사판을 제조하고자 할 때 1,2차 두 번의 마스킹, 코팅(또는 증착)과정을 진행했었던 것과 달리 본 발명은 레진과 하프-톤 패터닝(또는 2 단계 노출)기술을 이용하여 한 번의 마스킹 공정으로 요철을 형성하므로 공정수를 감소시키는 효과가 있다. 또한, 마스크 설계 변형으로 간단하게 원하는 각도의 다양한 반사각(요철의 프로파일)을 구현할 수 있다.Therefore, according to the method of manufacturing a reflective plate of a reflective LCD using halftone patterning according to the present invention, when manufacturing a reflective plate of a reflective LCD using an insulating film or a resin, the first and second masking and coating (or deposition) are performed twice. Unlike the process, the present invention has an effect of reducing the number of processes since the unevenness is formed by one masking process using a resin and a half-tone patterning (or two-step exposure) technique. In addition, the mask design modification can easily implement various reflection angles (profiles of irregularities) of a desired angle.
Claims (6)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000087518A KR20020057228A (en) | 2000-12-30 | 2000-12-30 | Method for producing reflect lcd using of half tone patterning |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020000087518A KR20020057228A (en) | 2000-12-30 | 2000-12-30 | Method for producing reflect lcd using of half tone patterning |
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| KR20020057228A true KR20020057228A (en) | 2002-07-11 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040035120A (en) * | 2002-10-18 | 2004-04-29 | 비오이 하이디스 테크놀로지 주식회사 | Method for manufacturing liquid crystal display |
| KR100570404B1 (en) * | 2001-08-06 | 2006-04-11 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | Transflective Type LCD and Method for Manufacturing the Same |
| KR100885767B1 (en) * | 2002-10-14 | 2009-02-26 | 하이디스 테크놀로지 주식회사 | Array substrate in liquid crystal display and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07198919A (en) * | 1993-12-28 | 1995-08-01 | Nec Corp | Production of reflector |
| JPH11248909A (en) * | 1998-03-04 | 1999-09-17 | Toppan Printing Co Ltd | Diffuse reflecting plate and its manufacture, and reflection type liquid crystal display using same |
| JP2000009911A (en) * | 1998-06-19 | 2000-01-14 | Sony Corp | Diffusion reflection plate, its production and reflection display device |
| JP2000250025A (en) * | 1999-02-25 | 2000-09-14 | Advanced Display Inc | Reflection type liquid crystal display device, its production and mask for production of reflection type liquid crystal display device |
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- 2000-12-30 KR KR1020000087518A patent/KR20020057228A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07198919A (en) * | 1993-12-28 | 1995-08-01 | Nec Corp | Production of reflector |
| JPH11248909A (en) * | 1998-03-04 | 1999-09-17 | Toppan Printing Co Ltd | Diffuse reflecting plate and its manufacture, and reflection type liquid crystal display using same |
| JP2000009911A (en) * | 1998-06-19 | 2000-01-14 | Sony Corp | Diffusion reflection plate, its production and reflection display device |
| JP2000250025A (en) * | 1999-02-25 | 2000-09-14 | Advanced Display Inc | Reflection type liquid crystal display device, its production and mask for production of reflection type liquid crystal display device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100570404B1 (en) * | 2001-08-06 | 2006-04-11 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | Transflective Type LCD and Method for Manufacturing the Same |
| KR100885767B1 (en) * | 2002-10-14 | 2009-02-26 | 하이디스 테크놀로지 주식회사 | Array substrate in liquid crystal display and manufacturing method thereof |
| KR20040035120A (en) * | 2002-10-18 | 2004-04-29 | 비오이 하이디스 테크놀로지 주식회사 | Method for manufacturing liquid crystal display |
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