KR20020053412A - Mold for semiconductor package - Google Patents

Abstract

PURPOSE: A mold for a semiconductor package is provided to mold the semiconductor package at two times per one process as much as a conventional process by holding two or more packages in a cavity in the mold at the same time. CONSTITUTION: A ram port(111) is formed on an upper mold(100) in order to move a transfer ram(121) melting a molding material(300) of a solid state to up and down direction. A runner(112) and a gate(113) are formed on the both sides of the ram port by connecting to the ram port in order to pass the melted molding material. The first cavity(114) molding the first semiconductor package part(501) is formed on each gate. A runner(212) and a gate(213) are formed on a lower mold by connecting to the ram port in order to pass the molding material. The second cavity(214) is formed on the gate in order to mold the second semiconductor package part(502) in an upset state. The first and the second cavity are formed in order to closely contact the first and the second semiconductor package part each other.

Description

Mold for semiconductor package

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mold for semiconductor packaging, and more particularly, to a mold for semiconductor packaging that can improve the molding speed and productivity of a semiconductor package material by approximately two or more times.

A general semiconductor package manufacturing process includes a sawing step of cutting and inspecting a plurality of semiconductor chips formed on a wafer, and a chip attaching step of adhering the semiconductor chips to a printed circuit board using an adhesive. A wire bonding step of placing the material on a heater block and connecting an input / output pad of a semiconductor chip and a bond finger end of a printed circuit board by using a conductive wire; The wire-bonded material is placed between the upper mold and the lower mold, and the encapsulant is filled to protect the semiconductor chip, the conductive wire, etc. from the external environment, electrically insulate, and effectively generate heat during operation of the semiconductor chip. Emission is made, such as a molding step (molding) step of molding to a certain shape so as to be easily mounted on the motherboard (Mother Board).

Here, the molding method using the mold and the encapsulant may be regarded as the core of the semiconductor package manufacturing step, and since it is simpler than any other processing method, it is the method most widely used in the molding process of the semiconductor package today. The encapsulant generally uses an epoxy molding compound, which is inferior in terms of thermal stability and reliability compared to ceramic, but is inexpensive and has a high productivity, so most encapsulants used in semiconductor packages today are The epoxy molding compound.

Conventionally, a method of molding using such an encapsulant uses a mold composed of an upper mold 10 and a lower mold 20 as shown in FIG. 1.

First, a transfer ram 30 is provided to receive a force from a predetermined press (not shown) and to push the encapsulant 40 in a high melt state in a predetermined direction.

On the other hand, the ram port 11 of a predetermined space is lowered in the state where the transfer ram 30 is inserted into the top die 10 so that the encapsulant 40 of the high-melting body located in the lower portion flows in a predetermined direction. Formed.

In addition, the plurality of runners 12 and gates may be connected to the ram port 11 of the top die 10 so that the encapsulant 40 softened by the pressing force of the transfer ram 30 may flow in a predetermined direction. (13) is formed.

In addition, a plurality of cavities 14 and 24 having a predetermined space are formed in the top die 10 and the bottom die 20 so that the semiconductor package material 50 can be located in communication with the gate 13.

Here, the upper mold 10 and the lower mold 20 have a heat cartridge 16 or the like as a heating means so that the high-melting encapsulant 40 is softened, and a plurality of air vents 15 are provided. It is formed so that the gas and air of the encapsulant 40 flowing in can be easily released to the outside of the cavity 14.

However, such a mold for a semiconductor package has a disadvantage in that only one semiconductor package material is placed in one cavity, so that the production speed is relatively slow and the productivity is not excellent.

The present invention has been made to solve such a conventional problem, an object of the present invention by placing at least two or more materials in the cavity of the mold for molding the semiconductor package material at the same time, approximately two times than conventional in one process To provide a mold for a semiconductor package capable of molding many semiconductor package materials.

1 is a cross-sectional view showing a mold for a conventional semiconductor package.

2 is a cross-sectional view showing a mold for a semiconductor package which is a first embodiment of the present invention.

3 is a cross-sectional view showing a mold for a semiconductor package as a second embodiment of the present invention.

Figure 4 is a plan view of the strip molded by Figures 2 and 3;

Code descriptions for the main parts of the drawings

100; mold 200; Lower mold

111,211; Ram Ports, Second Ram Ports 112 and 212; Runner,

113,213; Gate

114, 214; 1st cavity, 2nd cavity (Cavity)

121,221; Transfer Ram, Second Transfer Ram

300; Encapsulant

301; Cull

400; Plate

501,502; 1st semiconductor package material, 2nd semiconductor package material

In order to achieve the above object, a mold for a semiconductor package according to the present invention has a ramport having a predetermined diameter to move a transfer ram providing an encapsulant in a high pressure state, and one side of the ramport communicates with the ramport. And a runner and a gate are sequentially formed to pass the encapsulant, and the first mold having a first cavity formed at the gate so as to be molded into the encapsulant; Runners and gates are sequentially formed in the lower ramport of the upper mold to communicate with the ramport, and the encapsulant passes therethrough, and a second cavity is formed in the gate so that a second semiconductor package material is positioned and molded into the encapsulant. Characterized in that it is made, including the lower mold.

Here, the first cavity and the second cavity are formed such that the first and second semiconductor package materials seated in the respective first and second cavities are in close contact with each other.

In addition, a substantially plate-shaped plate is positioned between the first cavity and the second cavity, and the first and second semiconductor package materials may be in close contact with each other on the upper and lower surfaces of the plate.

The lower die may further include a second ram port communicating with the ram port, and a second second ram may be further coupled to the second ram port to move up and down.

As described above, in the mold for semiconductor package according to the present invention, the first cavity and the second cavity are respectively formed in the upper mold and the lower mold, and the first and second semiconductor package materials are positioned in the respective first and second cavities. By doing so, the molded semiconductor package material can be obtained twice as compared to the conventional one-step process. Therefore, productivity is doubled as compared with the prior art.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings such that those skilled in the art can easily implement the present invention.

FIG. 2 is a cross-sectional view illustrating a mold for a semiconductor package according to a first embodiment of the present invention. As shown in FIG. 2, the upper mold 100 and the lower mold 200 are combined.

First, in the upper mold 100, the ram pot 111 having a predetermined diameter so that the transfer ram 121 for fusing the solid encapsulant 300 in a high temperature and high pressure state can move in an up and down direction. And a runner 112 and a gate 113 are sequentially connected to both sides of the ram port 111 so that the melted encapsulant 300 can pass therethrough. Formed. In general, the first cavity 114 having a predetermined space communicates with each of the gates 113. The first cavity 114 is a space in which the first semiconductor package material 501 is seated and molded by the molten encapsulant 300.

Meanwhile, a runner 212 and a gate 213 are sequentially formed in the lower die 200 so as to communicate with the lower portion of the ram port 111 so that the encapsulant 300 passes therethrough, and the gate 213. The second cavity 214 is formed in communication with the second semiconductor package material 502 so that the second semiconductor package material 502 is positioned and molded in an inverted state.

That is, the first cavity 114 and the second cavity 214 are formed such that the first and second semiconductor package materials 501 and 502 seated thereon are in close contact with each other. In more detail, the first semiconductor package material 501 is positioned in the correct position, and the first semiconductor package material 502 is turned upside down on the bottom surface of the first semiconductor package material 501. It adheres to the lower surface of the package material 501.

Accordingly, the encapsulant 300 through the ramport 111 is formed through the first and second cavity 114 and the gates 113 and 213 of the upper mold 100 and the lower mold 200, respectively. A first semiconductor package material 501 filled in two cavities 214 and thus seated in the first cavity 114 of the upper mold 100 and the second cavity 214 of the lower mold 200, respectively; The second semiconductor package material 502 is molded at the same time in one process, thereby improving productivity by approximately two times as compared with the prior art.

3 is a cross-sectional view showing a mold for a semiconductor package as a second embodiment of the present invention.

As shown, most of the structure is similar to that of the first embodiment, except that the substantially plate-shaped plate 400 is formed of the first cavity 114 of the upper mold 100 and the second cavity of the lower mold 200 ( Inserted in 214 is different.

That is, a substantially plate-shaped plate 400 is further located between the first cavity 114 and the second cavity 214, and the first semiconductor package material 501 is disposed on the upper and lower surfaces of the plates 400. And the second semiconductor package material 502 are in close contact with each other. Of course, the runners 112 and 212 and the gates 113 and 213 communicating with the ram ports 111 are formed on the upper and lower surfaces of the plate 400.

In addition, the lower die 200 is further formed with a second ram port 211 in communication with the ram port 111, the second ram port 211 is a separate second transformer (221) is upper It may be coupled to move downward. As described above, when the ram ports 111 and 211 are provided in the upper mold 100 and the lower mold 200, the encapsulant 300 is filled in each of the first cavity 114 and the second cavity 214. This is further shortened, and this structure is also applicable to the first embodiment as it is.

On the other hand, the above-described structure also the encapsulant 300 through the ram port 111, each of the first cavity through the runners 112 and 212 and the gates 113 and 213 of the upper mold 100 and the lower mold 200, respectively. 114 and the second cavity 214, and thus the first semiconductor package material seated in the first cavity 114 of the upper mold 100 and the second cavity 214 of the lower mold 200, respectively The 501 and the second semiconductor package material 502 are molded at the same time in one process, whereby the productivity is approximately doubled compared to the conventional one.

The semiconductor package material is separated from the semiconductor package material (501, 502) from the upper and lower molds (100, 200) after cooling the heat of the encapsulant 300, as shown in Figure 4 curl (301) By cutting the (Cull) by the cutting means, the molding of the semiconductor package material is completed.

As described above, although the present invention has been described with reference to the above embodiments, the present invention is not limited thereto, and various modifications may be made without departing from the scope and spirit of the present invention.

Therefore, in the mold for semiconductor package according to the present invention, the first cavity and the second cavity are respectively formed in the upper mold and the lower mold, and the first and second semiconductor package materials are positioned in the respective first and second cavities. In one process, the molded semiconductor package material is twice as large as the conventional one. Therefore, there is an effect that the productivity is improved twice as compared with the conventional.

Claims (4)

Ramports having a predetermined diameter are formed to move the transfer ram providing the encapsulant in a high pressure state, and a runner and a gate are sequentially formed to communicate with the ramport so that the encapsulant passes, and the first semiconductor is formed on the gate. An upper mold having a first cavity formed so that the package material is positioned and molded into the encapsulant; Runners and gates are sequentially formed in the lower ramport of the upper mold to communicate with the ramport, and the encapsulant passes therethrough, and a second cavity is formed in the gate so that a second semiconductor package material is positioned and molded into the encapsulant. Mold for semiconductor package, including the lower die. The mold of claim 1, wherein the first cavity and the second cavity are formed to closely adhere to the first and second semiconductor package materials seated on the respective first and second cavities. 2. The semiconductor package mold as claimed in claim 1, wherein a substantially plate-shaped plate is positioned between the first cavity and the second cavity, and first and second semiconductor package materials adhere to the upper and lower surfaces of the plate. According to claim 1, wherein the lower die is further formed with a second ram port in communication with the ram port, the second ram port is characterized in that a separate second transfer ram is coupled to move up, down Mold for semiconductor package.