KR20020052707A - Wafer edge shot exposure through multi-blade processing - Google Patents

Wafer edge shot exposure through multi-blade processing Download PDF

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Publication number
KR20020052707A
KR20020052707A KR1020000082142A KR20000082142A KR20020052707A KR 20020052707 A KR20020052707 A KR 20020052707A KR 1020000082142 A KR1020000082142 A KR 1020000082142A KR 20000082142 A KR20000082142 A KR 20000082142A KR 20020052707 A KR20020052707 A KR 20020052707A
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KR
South Korea
Prior art keywords
wafer edge
shot
exposure
blades
blade
Prior art date
Application number
KR1020000082142A
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Korean (ko)
Inventor
박종오
Original Assignee
박종섭
주식회사 하이닉스반도체
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Application filed by 박종섭, 주식회사 하이닉스반도체 filed Critical 박종섭
Priority to KR1020000082142A priority Critical patent/KR20020052707A/en
Publication of KR20020052707A publication Critical patent/KR20020052707A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: A method for wafer edge shot exposure using a multi-blade process is provided to improve the productivity by installing additional blades to existing masking blades of a wafer edge portion and reducing the number of edge shot exposure. CONSTITUTION: A plurality of additional blade(F,G) is installed in a combination of masking blades(A,B,C,D) of a rectangular shape. The additional blades(F,G) are installed doubly on the rectangular blades(A,B,C,D). In a wafer edge shot exposure process, the number of shot is reduced from two shots to one shot. The productivity is improved since the number of exposing shot is reduced. Accordingly, the number of shot can be reduced by processing doubly masking blades of a wafer edge portion.

Description

다중 블레이드 처리를 통한 웨이퍼 엣지 샷 노광방법{Wafer edge shot exposure through multi-blade processing}Wafer edge shot exposure method through multi-blade processing

본 발명은 다중 블레이드 처리를 통한 웨이퍼 엣지 샷 노광방법에 관한 것으로, 특히 종래의 마스킹 블레이드에 블레이드를 추가하여 웨이퍼 엣지 샷 노광을 행함으로써 생산성을 향상시키는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer edge shot exposure method through multiple blade processing, and more particularly, to a method for improving productivity by performing a wafer edge shot exposure by adding a blade to a conventional masking blade.

마스킹 블레이드는 노광공정시 노광되는 영역의 크기를 조절하는 노광장치의 부품으로서 도1과 같이 구성되어 있다. 즉, A,B,C,D 4개의 불투명한 재질의 사각막대형태를 가지며 모터구동장치에 의해 구동된다. E는 빛이 투과되어 노광되는 영역이다.The masking blade is configured as shown in FIG. 1 as a component of an exposure apparatus for adjusting the size of an area to be exposed during an exposure process. That is, A, B, C, and D have four opaque rectangular bar shapes and are driven by a motor driving device. E is a region through which light is transmitted through exposure.

반도체소자 제조를 위한 노광공정시 웨이퍼 안쪽과 바깥쪽의 마스킹 블레이드값은 서로 같게 할 수 있으나, 엣지 경계부에서 이물질 발생등의 이유로 마스킹 블레이드를 서로 다르게 처리하고 있다. 이때, 엣지부의 블레이드로 처리할 샷이 직사각형 모양이 아니고 도2에 나타낸 바와 같이 다른 형태라면 (예를 들면, 'ㄱ'자나 'ㄴ'자) 블레이드 처리가 한번에 되지 않는다. 따라서 이러한 문제를 해결하기 위하여 도3에 나타낸 바와 같이 2회 노광하는 방법을 사용하고 있는데 이것은 생산성(throughput)의 저하를 유발한다.In the exposure process for manufacturing a semiconductor device, the masking blades inside and outside the wafer may have the same value, but the masking blades are treated differently due to the occurrence of foreign matters at the edge boundary. At this time, if the shot to be processed by the blade of the edge portion is not a rectangular shape and has a different shape as shown in Fig. 2 (for example, 'a' or 'b' character), blade processing is not performed at once. Therefore, in order to solve this problem, as shown in Fig. 3, a method of exposing twice is used, which causes a decrease in throughput.

본 발명은 상기 문제점을 해결하기 위한 것으로써, 2회 노광시 발생하는 생산성 저하를 개선하기 위하여 추가로 블레이드를 설치하여 1회의 노광으로 웨이퍼 엣지 샷의 노광을 행할 수 있도록 하는 다중 블레이드 처리를 통한 웨이퍼 엣지 샷 노광방법을 제공하는데 목적이 있다.The present invention is to solve the above problems, in order to improve the productivity degradation caused by the two exposures, the wafer through the multi-blade processing to install the blade to perform the exposure of the wafer edge shot in one exposure An object of the present invention is to provide an edge shot exposure method.

도1은 종래의 마스킹 블레이드 처리를 도시한 평면도.1 is a plan view showing a conventional masking blade process.

도2는 노광할 샷의 한 형태를 나타낸 평면도.2 is a plan view showing one form of a shot to be exposed;

도3은 종래의 마스킹 블레이를 이용한 2회 노광을 설명하는 도면.3 is a diagram illustrating two exposures using a conventional masking blade.

도4는 본 발명에 의한 마스킹 블레이드 처리를 도시한 평면도.4 is a plan view showing a masking blade process according to the present invention.

도5는 노광할 샷의 한 형태를 나타낸 평면도.5 is a plan view showing one form of a shot to be exposed;

상기 목적을 달성하기 위한 본 발명은, 다중 블레이드 처리를 통한 웨이퍼 엣지 샷 노광방법에 있어서, 웨이퍼 엣지부분에 마스킹 블레이드를 2중으로 처리하여 1회의 노광으로 다양한 형태의 샷을 노광하는 것을 특징으로 한다.The present invention for achieving the above object is, in the wafer edge shot exposure method through a multi-blade process, characterized in that the masking blade is exposed to the wafer edge portion in duplicate to expose a variety of shots in one exposure.

이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do.

본 발명은 웨이퍼 엣지 샷 노광시 종래에 2회에 걸쳐 노광할때 발생하는 생산성 저하를 개선하기 위해 1회 노광하는 방법을 제안한다.The present invention proposes a method of exposing once in order to improve the productivity decrease caused by exposing twice conventionally during wafer edge shot exposure.

본 발명은 도4에 나타낸 바와 같이 기존의 직사각형 형태의 마스킹 블레이드의 조합(A,B,C,D)에 추가로 블레이드(F,G)를 설치한다. 즉, 노광해야 할 샷의 형태가 도5와 같을 경우, 추가된 블레이드(F,G)를 도4에 나타낸 바와 같이 기존의 직사각형 블레이드(A,B,C,D)상에 이중으로 설치하면 1회의 노광으로 도5의 샷을 만들 수 있다. 이는 기존에 비하여 노광하는 샷의 수를 줄일 수 있기 때문에 생산성 측면에서 유리하다.In the present invention, as shown in Fig. 4, the blades F and G are additionally installed in the combinations A, B, C, and D of the existing rectangular masking blades. That is, when the shape of the shot to be exposed is as shown in FIG. 5, if the additional blades F and G are installed on the existing rectangular blades A, B, C, and D as shown in FIG. The shots of FIG. 5 can be made with the exposure. This is advantageous in terms of productivity since the number of shots to be exposed can be reduced as compared with the conventional one.

본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

본 발명은 기존의 2회 노광시 발생하는 생산성 저하를 개선하기 위해 1회 노광으로 대처할 수 있도록 고안되었으므로 기존에 비교하여 노광하는 샷의 수를 줄일 수 있고 이에 따라 생산성을 향상시킬 수 있다.The present invention is designed to cope with a single exposure in order to improve the productivity decrease occurring during the conventional two exposures, so that the number of shots exposed to the conventional exposures can be reduced, thereby improving productivity.

Claims (1)

다중 블레이드 처리를 통한 웨이퍼 엣지 샷 노광방법에 있어서,In the wafer edge shot exposure method through a multiple blade process, 웨이퍼 엣지부분에 마스킹 블레이드를 2중으로 처리하여 1회의 노광으로 다양한 형태의 샷을 노광하는 것을 특징으로 하는 다중 블레이드 처리를 통한 웨이퍼 엣지 샷 노광방법.A method of exposing a wafer edge shot through multiple blade processing, wherein a masking blade is double-processed on a wafer edge to expose various types of shots in one exposure.
KR1020000082142A 2000-12-26 2000-12-26 Wafer edge shot exposure through multi-blade processing KR20020052707A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100607789B1 (en) * 2004-12-29 2006-08-02 동부일렉트로닉스 주식회사 Exposure method for photolithography process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100607789B1 (en) * 2004-12-29 2006-08-02 동부일렉트로닉스 주식회사 Exposure method for photolithography process

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