KR20020040875A - 다중 전극 스퍼터링 시스템에서 기판 바이어싱을 위한방법 및 장치 - Google Patents

다중 전극 스퍼터링 시스템에서 기판 바이어싱을 위한방법 및 장치 Download PDF

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Publication number
KR20020040875A
KR20020040875A KR1020027004818A KR20027004818A KR20020040875A KR 20020040875 A KR20020040875 A KR 20020040875A KR 1020027004818 A KR1020027004818 A KR 1020027004818A KR 20027004818 A KR20027004818 A KR 20027004818A KR 20020040875 A KR20020040875 A KR 20020040875A
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KR
South Korea
Prior art keywords
substrate
voltage
chamber
target
secondary winding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020027004818A
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English (en)
Korean (ko)
Inventor
스콜리챠드에이.
벨킨드아브라함
Original Assignee
로버트 엠. 포터
어드밴스드 에너지 인더스트리즈 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 로버트 엠. 포터, 어드밴스드 에너지 인더스트리즈 인코포레이티드 filed Critical 로버트 엠. 포터
Publication of KR20020040875A publication Critical patent/KR20020040875A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020027004818A 1999-10-15 2000-10-13 다중 전극 스퍼터링 시스템에서 기판 바이어싱을 위한방법 및 장치 Withdrawn KR20020040875A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15989699P 1999-10-15 1999-10-15
US60/159,896 1999-10-15
PCT/US2000/028482 WO2001029278A1 (en) 1999-10-15 2000-10-13 Method and apparatus for substrate biasing in multiple electrode sputtering systems

Publications (1)

Publication Number Publication Date
KR20020040875A true KR20020040875A (ko) 2002-05-30

Family

ID=22574565

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027004818A Withdrawn KR20020040875A (ko) 1999-10-15 2000-10-13 다중 전극 스퍼터링 시스템에서 기판 바이어싱을 위한방법 및 장치

Country Status (4)

Country Link
EP (1) EP1235947A4 (enExample)
JP (1) JP2003512526A (enExample)
KR (1) KR20020040875A (enExample)
WO (1) WO2001029278A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220094933A (ko) * 2020-12-29 2022-07-06 주식회사 더블유에스지 비접촉식 전해연마 공정을 포함하는 강관의 제조방법, 이로부터 제조되는 강관

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6818103B1 (en) 1999-10-15 2004-11-16 Advanced Energy Industries, Inc. Method and apparatus for substrate biasing in multiple electrode sputtering systems
US7179350B2 (en) 2003-05-23 2007-02-20 Tegal Corporation Reactive sputtering of silicon nitride films by RF supported DC magnetron
US8691057B2 (en) 2008-03-25 2014-04-08 Oem Group Stress adjustment in reactive sputtering
DE102008060838A1 (de) 2008-12-05 2010-06-10 Zounek, Alexis, Dr. Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens
US8482375B2 (en) 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
RU2540318C2 (ru) * 2013-03-18 2015-02-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП "НПП "Исток") Устройство для ионно-плазменного травления и нанесения тонких пленок
RU2562568C2 (ru) * 2013-06-18 2015-09-10 Виталий Степанович Гончаров Установка для вакуумного ионно-плазменного нанесения покрытий
PL3648551T3 (pl) 2017-06-27 2021-12-06 Canon Anelva Corporation Urządzenie do obróbki plazmowej
KR102361377B1 (ko) 2017-06-27 2022-02-10 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
SG11201912569UA (en) 2017-06-27 2020-01-30 Canon Anelva Corp Plasma processing apparatus
WO2019004190A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
JP6280677B1 (ja) 2017-06-27 2018-02-14 キヤノンアネルバ株式会社 プラズマ処理装置
EP4425529A3 (en) 2018-06-26 2024-12-11 Canon Anelva Corporation Plasma processing apparatus, plasma processing method, program, and memory medium

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
DE4042287C2 (de) * 1990-12-31 1999-10-28 Leybold Ag Vorrichtung zum reaktiven Aufstäuben von elektrisch isolierendem Werkstoff
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
US5512164A (en) * 1993-06-03 1996-04-30 The United States Of America As Represented By The United States Department Of Energy Method for sputtering with low frequency alternating current
US5882492A (en) * 1996-06-21 1999-03-16 Sierra Applied Sciences, Inc. A.C. plasma processing system
US5897753A (en) * 1997-05-28 1999-04-27 Advanced Energy Industries, Inc. Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages
ES2203748T3 (es) * 1997-10-08 2004-04-16 Recherche Et Developpement Du Groupe Cockerill Sambre, En Abrege: Rd-Cs Procedimiento para el decapado de la superficie de un substrato e instalacion para la realizacion de este procedimiento.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220094933A (ko) * 2020-12-29 2022-07-06 주식회사 더블유에스지 비접촉식 전해연마 공정을 포함하는 강관의 제조방법, 이로부터 제조되는 강관

Also Published As

Publication number Publication date
JP2003512526A (ja) 2003-04-02
EP1235947A1 (en) 2002-09-04
EP1235947A4 (en) 2009-04-15
WO2001029278A1 (en) 2001-04-26

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PA0105 International application

Patent event date: 20020415

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid