KR20020030093A - Hot wall rapid thermal processor - Google Patents

Abstract

The heat treatment apparatus 10 of the wafer 28 is disclosed. The heat treatment apparatus includes a heating chamber 18 having a heat source 20. Cooling chamber 32 is disposed adjacent the heating chamber, the cooling chamber comprising a cooling source 40. The wafer holder 38 is configured to move between the cooling chamber and the heating chamber through the passage 54, with one or more shutters 52 determining the size of the passage. One or more shutters may move between an open position through which the wafer holder can pass through the passage and a blocking position that defines a passage smaller than the passage formed when in the open position.

Description

HOT WALL RAPID THERMAL PROCESSOR}

Heat treatment devices are used in many industries, including the manufacture of semiconductor devices. Such heat treatment devices are used in many different manufacturing processes such as thermal annealing, thermal cleaning, thermal chemical vapor deposition, thermal oxidation and thermal nitriding. Such heat treatments often require raising the temperature of the wafer to 350-1300 ° C. before and during the heat treatment. In addition, these heat treatments often require one or more fluids to be supplied to the wafer.

There are several design problems to satisfy the thermal conditions of the heat treatment apparatus. For example, in some cases it would be desirable to raise and / or lower the temperature of the wafer being processed very quickly. During this abrupt temperature change, uniformity of the wafer temperature should be achieved to prevent damage to the wafer. Wafers may not withstand even the smallest temperature differences during high temperature processing. For example, a temperature difference of 1200 ° C. to 1-2 ° C. or higher may cause enough stress to create a slip in the silicon crystal of a certain wafer. The resulting slip surface will destroy the device through which the slip passes.

Supplying fluid to the wafer can also cause design issues. For example, the exposure of the wafer to the fluid should be uniform across the wafer to avoid uneven processing progress. In addition, the fluid in the heat treatment apparatus may be quickly discharged from the heat treatment apparatus in some cases. Another problem with the fluid supply is the replacement of the fluid in the heating chamber with another fluid. This exchange of fluid sometimes has to be done while minimizing the interaction between the original fluid and the replacement fluid.

The present application is directed to US Patent No. 09 / 373,894, entitled "Hot Heat Wall Type Rapid Heat Treatment Apparatus," filed August 12, 1999, and "High Temperature Wall Type Rapid Heat Treatment Device," filed July 7, 2000. Partially filed in US Patent No. 60 / 217,321, entitled All, the entire contents of which are hereby incorporated by reference.

The present invention relates to an apparatus for applying heat to a wafer, and more particularly, to an apparatus for rapidly heat treating a wafer.

1A is a cross-sectional view of a heat treatment apparatus having a heating chamber adjacent to a cooling chamber.

1B is a cross-sectional view of a heat treatment apparatus having a shutter with the shutter in an open position;

1C is a cross-sectional view of a heat treatment apparatus having a shutter, with the shutter in a blocking position;

2A is a cross-sectional view of a heating chamber with a heating plate disposed outside the processing tube.

2B is a cross-sectional view of a heating chamber with a heating plate disposed inside the processing tube.

3 is a cross-sectional view of a cooling chamber having a cooling fluid conduit for supplying cooling fluid to the wafer.

4A is a bottom view of the top of a heating chamber in which a plurality of fluid ports are formed.

4B is a cross sectional view of an upper portion of a heating chamber including lumens coupled with multiple fluid ports;

4C is a cross sectional view of the top of the heating chamber showing a number of fluid ports extending through the top.

5A is a cross-sectional view of a fluid supply system having a fluid inlet port and a fluid outlet port arranged to produce a downward flow of fluid in the heating chamber.

5B is a cross-sectional view of a fluid supply system having a fluid inlet port and a fluid outlet port arranged to produce a downward flow of fluid in the heating chamber.

6A is a cross-sectional view of a fluid supply system having a flow arrestor member extending from a processing tube into a heating chamber.

6B is a cross-sectional view of the fluid supply system of FIG. 6A in a processing tube of round cross-sectional shape.

6C is a cross-sectional view of the fluid supply system of FIG. 6A in a processing tube of rectangular cross-sectional shape.

6D is a cross-sectional view of a fluid supply system having a plurality of fluid inlet ports and a plurality of fluid outlet ports.

7A is a cross sectional view of a fluid supply system having a flow distribution chamber disposed adjacent the fluid flow region.

7B is a side view of a flow distribution member for use in the flow distribution chamber.

7C is a cross-sectional view of a fluid supply system having an arcuate flow distribution member.

7D is a cross sectional view of a fluid supply system having a flat flow distribution member in a processing tube of round cross-sectional shape;

7E is a cross sectional view of a fluid supply system having a flat flow distribution member in a processing tube of rectangular cross-sectional shape;

8 is a cross-sectional view of a fluid supply system with a flow inhibiting member associated with a heating plate.

9A-9D illustrate a fluid supply system having a portion of an inlet port, a fluid flow region, and a fluid flow passage formed by a portion of the fluid discharge region.

10A is a sectional view of the shutter in the open position;

10B is a sectional view of the shutter in the shut off position;

11A is a plan view of the shutter in a preferred blocking position when the wafer holder is disposed in a heating chamber;

11B is a plan view of the shutter located at one example of the blocking position;

11C is a plan view of a shutter with a recess for receiving the shaft;

12A is a cross-sectional view of a plurality of heating elements disposed in concentric heating zones.

12B is a cross-sectional view of the heating elements disposed concentrically with each other in accordance with an embodiment of the present invention.

12C and 12D are cross-sectional views of an insulating barrier disposed between heating zones in accordance with one embodiment of the present invention.

13 shows a shaft conduit extending from the cooling chamber.

14 is a graph showing the relative heat conduction contributions by conduction and radiation.

15A and 15B are cross-sectional views of a wafer holder in accordance with one embodiment of the present invention.

16A-16D are cross-sectional views of a wafer holder in accordance with four alternative embodiments of the present invention.

17 is a cross-sectional view of a portion of a wafer lift assembly and wafer holder in accordance with an embodiment of the present invention.

18 is a perspective view of a wafer holder according to another embodiment of the present invention.

19 is a cross-sectional view showing a wafer holder and a heat treatment apparatus according to an embodiment of the present invention.

20 is a partial cross-sectional view of the heat treatment apparatus showing the flow and detention of the gas in the heat treatment apparatus.

21 is a cross-sectional view of a heating zone for a preheating chamber in accordance with an embodiment of the present invention.

22 is a perspective view partially showing a portion of a heat treatment apparatus according to another embodiment of the present invention.

FIG. 23 is a partial cutaway perspective view of the shutter cavity portion of FIG. 22; FIG.

24A and 24C are cross-sectional, top and bottom perspective views, respectively, of another embodiment of the wafer carrier of the present invention.

The present invention relates to a heat treatment apparatus. The apparatus includes a heating chamber with a heat source. The cooling chamber is disposed proximate to the heat treatment chamber and includes a cooling source. The wafer holder is configured to move between the cooling chamber and the heating chamber through the passage. One or more shutters determine the size of the passageway, the shutter between the open position through which the wafer holder can pass the passageway and the blocking position forming a passageway smaller than the passageway formed when the shutter is in the open position. You can move on. As a particularly preferred advantage, the shutter can promote thermal insulation and chemical separation between the heating chamber and the cooling chamber.

Another embodiment of the heat treatment apparatus includes a heating chamber disposed adjacent to the cooling chamber. The wafer holder is configured to be disposed in the cooling chamber at a loading position that can remove the wafer from the wafer holder. The wafer holder can move between the cooling chamber and the heating chamber. A cooling source, such as a cooling plate, is disposed in the cooling chamber so that the wafer holder is below the wafer holder when the wafer holder is placed in the stowed position.

Another embodiment of the heat treatment apparatus includes a heating chamber having a closed top. Multiple heating elements are disposed above the closed top of the heating chamber. The upper end of the heating chamber includes a heating plate configured to receive thermal energy from the heating element and distribute the thermal energy substantially uniformly over the surface of the heating plate disposed within the heating chamber. The heating plate includes a plurality of fluid ports connected with a fluid source. The wafer holder is disposed in the heating chamber such that the wafer supported by the wafer holder receives the fluid supplied through the fluid port into the heating chamber.

Another embodiment of the invention includes a cooling chamber disposed adjacent the heating chamber. The wafer holder is connected with one or more shafts that are driven such that the wafer holder is moved through a passageway between the cooling chamber and the heating chamber. Two or more shutters are placed adjacent to the passageway and moved within the horizontal plane to determine the size of the passageway. Two or more shutters may be moved to a blocking position surrounding the one or more shafts in which the two or more shutters are connected with the wafer holder.

The invention also relates to a heat treatment apparatus having a heating chamber and at least one fluid inlet port for supplying fluid into the heating chamber. There is a member extending into the heating chamber from the side of the heating chamber at a height lower than the height of the fluid inlet port. The member has an edge having a shape complementary to a circumference of a portion of the wafer to be processed in the heat treatment apparatus. The wafer holder can move within the heating chamber and move the wafer adjacent to the member to form a fluid flow region within the heating chamber.

Another embodiment of a heat treatment apparatus having a heating chamber and one or more fluid inlet ports for supplying fluid into the heating chamber includes a flow distribution chamber that distributes fluid flow from one or more fluid inlet ports. The flow distribution chamber is arranged such that fluid from the fluid inlet port enters the heating chamber through the flow distribution chamber.

The heat treatment apparatus also includes a fluid discharge port for withdrawing fluid from the heating chamber, and a second flow distribution chamber for distributing fluid flow from the heating chamber to the fluid discharge port. The second flow distribution chamber is arranged such that fluid from the heating chamber enters the fluid discharge port through the flow distribution chamber.

The flow distribution chamber associated with the fluid inlet port may include a flow distribution member disposed to allow fluid from the fluid inlet port to enter the heating chamber through the flow distribution chamber. Similarly, the flow distribution chamber associated with the fluid discharge port may include a flow distribution member disposed such that fluid from the heating chamber enters the fluid discharge port through the flow distribution chamber.

The invention also relates to a method for rapid heat treatment of a wafer. The method includes providing a heating chamber with a heating plate, and heating the heating plate. The method also includes positioning the wafer in the wafer holder and moving the wafer holder toward the heating plate until the wafer is placed close enough to the heat source to conduct heat from the heating plate to the wafer.

The method may also include retracting the wafer holder from the heating plate after the desired target conditions have been achieved on the wafer, and supplying fluid from above the wafer holder into the heating chamber.

In another aspect of the invention, the invention provides a heat treatment apparatus and a wafer holder configured to promote more uniform heating of the wafer.

In another aspect, the heat treatment apparatus improves the containment of the gas in the heating chamber by making a pressure difference between the heating chamber and the cooling chamber and flowing a purge gas.

The present invention relates to a heat treatment apparatus. The heat treatment apparatus includes a heating chamber having a heating source disposed adjacent to a cooling chamber having a cooling source. The heat treatment apparatus also includes a wafer holder configured to move through a passageway between the heating chamber and the cooling chamber. Shutters are arranged to control the size of the passageway. The shutter can be moved between an open position where a passage is large enough for the wafer holder to pass through and a blocking position where a smaller passage is formed. The shutter may be placed in the blocking position regardless of whether the wafer holder is located in the cooling chamber or in the heating chamber.

The shutter may be configured as an insulator. Thus, when the shutter is placed in the blocking position, the shutter strengthens the insulation between the heating chamber and the cooling chamber to the degree of insulation obtained in the absence of the shutter. Increased insulation can also widen the difference between the average temperature in the heating chamber and the average temperature in the cooling chamber. For example, for a given average temperature in the heating chamber, the cooling chamber may have an average temperature lower than the temperature obtainable without a shutter. Lowering the average temperature in the cooling chamber makes it possible to increase the rate of temperature drop when the wafer is placed in the cooling chamber. Similarly, the elevated average temperature in the heating chamber makes it possible to increase the rate of temperature rise when the wafer is in the heating chamber. Increasing the rate of temperature rise and rate of drop increases the speed of wafer processing, thus making production faster.

The heat source comprises a heating plate, which receives heat rays from the heating element disposed thereon. The heating plate radiates the received heat back into the heating chamber from the surface of the heating plate disposed in the heating chamber. The heating plate is made of a high thermal conductivity material so that the received heat is distributed more evenly over the heating plate. Increasing the uniformity of heat distribution in the heating plate also increases the uniform radiation of the hot wire into the heating chamber.

While the wafer is rising in temperature, the wafer holder can be placed anywhere in the heating chamber. However, it is desirable to place the wafer holder so that the wafer in the wafer holder is close enough to the heating plate so that heat can be transferred from the heating plate to the wafer. For example, the wafer is preferably placed within 2 millimeters from the heating plate. The placement of the wafer relative to this hot plate allows heat transfer to occur through both conduction and radiation. Since heat transfer to the wafer occurs in two forms, the heat treatment apparatus can achieve a faster temperature rise than can be obtained by an apparatus that mainly uses radiation as a heat transfer mechanism.

The heating plate forms at least a portion of the upper end of the heating chamber and the passage from the wafer to the heating plate is not blocked. This unblocked path allows the wafer to be moved closer to the hot plate. In addition, the unblocked path allows better control of conditions on the surface of the wafer. For example, changes in the conditions of the hot plate, such as changes in the temperature of the hot plate, are transferred directly to the wafer without being delayed by delivery through any intermediate medium.

The relationship between the temperature of the hot plate and the temperature of the wafer surface may be obtained for a particular displacement of the wafer from the hot plate. This relationship may be used to control the temperature of the wafer by adjusting the temperature of the heating plate. The heating plate acts as a heat reservoir having a temperature that can be easily monitored and controlled because of its large thermal mass. Since the temperature of the hot plate can be easily controlled, the above relationship makes it easier to control the temperature of the wafer than is currently possible. In addition, the present invention provides improved temperature stability and improved temperature control. For example, the present invention significantly reduces overheating problems and significantly reduces problems with thermal cycling. It also significantly reduces peak power requirements and improves overall energy efficiency.

Many improved fluid supply systems are within the scope of this invention. For example, multiple fluid ports may be formed at the top of the heating chamber. Fluid may be supplied into the heating chamber through this fluid port. Since this fluid port is disposed at the top of the heating chamber, the fluid can be supplied onto the top surface of the wafer in the wafer holder even if the wafer is placed close to the top of the heating chamber. In order to increase the uniformity of the fluid supply to the wafer, such fluid ports can be arranged uniformly across the top. Increased uniformity allows liquid to flow in a plug form from the top of the heating chamber towards the wafer. The plug form allows fluid to be discharged more quickly from the heating chamber. In addition, the plug-like flow allows fluid in the heating chamber to be quickly replaced while reducing the degree of interaction between the gases being exchanged.

Since a heating plate may be included at the top of the heating chamber, the fluid port may be included in the heating plate. Thus, the heating plate can be used to supply both heat and fluid to the wafer; However, this is just one example and other configurations may be used.

The cooling source in the cooling chamber may comprise a cooling plate. The cold plate may be disposed such that the upper surface of the cold plate may be adjacent to the wafer on the wafer holder when the wafer holder occupies one or more loading positions in the cooling chamber. The loading position is a position that the wafer holder can occupy while the wafer is loaded and unloaded from the wafer holder. Preferably, the cooling plate has a high thermal conductivity, so that cooling is distributed through the upper surface of the cooling plate, and having a high heat release property, the cooling effect is distributed into the cooling chamber. The distribution of cooling through the cold plate increases the cooling uniformity provided to the wafer, thereby reducing the stress that occurs on the wafer during cooling.

The cooling source also includes a cooling fluid conduit for supplying cooling fluid to the cooling chamber. Cooling fluid conduits may be used with or in place of cold plates.

1A shows a cross section of the heat treatment apparatus 10. The heat treatment apparatus 10 includes a casing 12 that partially surrounds the heating portion 14 of the apparatus 10. The heating portion 14 includes at least one heat insulation portion disposed adjacent to the heating chamber 18. 16). A number of heating elements 20 are attached to the thermal insulation 16 adjacent to the upper end 22 of the heating chamber 18. Suitable heating elements 20 include resistive heating elements connected to a power supply controlled by a computer (not shown). However, the present invention is not limited to the resistive heating element.

Heating chamber 18 is formed in part by processing tube 24. The heating plate 26 forms the upper end 22 of the heating chamber 18. The heating plate 26 has a circumference that can sufficiently cover the wafer 28 disposed adjacent to the heating plate. The heating plate 26 may be made of the same material as the processing tube 24 as the rest of the processing tube 24 or may be made of a different material. In addition, the heating plate 26 may be integrally formed with the rest of the processing tube 24 or may be attached to the rest of the processing tube 24. Suitable materials for the processing tube 24 include high purity quartz, fused silica and silicon carbide. However, it is not limited to the material. In addition, the heating plate 26 is preferably made of a high thermal conductive material such as silicon carbide and graphite covered with silicon carbide.

The heating plate 26 and the heating element 20 serve as one example of a heat source for use in the heat treatment apparatus 10. The heating plate 26 receives the heating wire radiated from the heating element 20 and radiates the secondary heating wire into the heating chamber 18. Since the heating plate 26 has high thermal conductivity, the heat received from the heating element 20 is dispersed through the heating plate 26. Optionally, a plurality of second heating elements 30 may be coupled to the thermal insulation 16 adjacent to the sides of the processing unit. The second heating element 30 can provide additional heat to the heating chamber 18 and / or to achieve better temperature control in the heating chamber 18 and to achieve better temperature uniformity. Can be used. As one example, the heating element may take the form of a resistive heating element.

The heat treatment apparatus 10 also includes a cooling chamber 32 disposed adjacent to the heating chamber 18. 1A shows a wafer 28 supported on a number of wafer support pins 34 extending upward from the bottom of the cooling chamber 32. To load and / or unload the wafer 28 from the wafer support pins 34, the cooling chamber 32 may be accessed through the slit valve 36 from the loading / lock chamber. Robotic arms may be used to load and unload wafers 28 from the pins. Although only one wafer 28 is shown in FIG. 1A, a cartridge holding multiple wafers 28 may be supported on wafer support pins 34. Therefore, the heat processing apparatus 10 of this invention can be utilized also when processing many wafers 28 simultaneously.

1A also shows the wafer holder 38 in a stowed position below the wafer 28. The loading position is the position occupied by the wafer holder 38 when the wafer 28 is loaded and / or unloaded onto the wafer support pin 34. Wafer holder 38 may take the form of a ring and / or a plate / disk surrounding the pins. As described in more detail below, the wafer holder 38 is configured to move between the cooling chamber 32 and the heating chamber 18.

The cooling source 40 is disposed in the cooling chamber 32 so that the wafer holder 38 is below the wafer holder 38 when the wafer holder 38 is disposed in the cooling chamber 32. Preferably, the cooling source 40 is disposed adjacent to the bottom of the cooling chamber 32, most preferably below the wafer 28 when the wafer holder 38 is in the stowed position.

Preferably, the cooling source 40 comprises a cooling plate 42. The cooling plate 42 may be disposed adjacent one or more cooling fluid conduits 44, as shown in FIG. 1A. Optionally, the cold plate 42 may include one or more cooling fluid conduits 44 extending through the cold plate 42, as shown in FIG. 1B. Cooling fluid may flow through the cooling fluid conduit 44. The cooling plate 42 functions to distribute the cooling effect of the fluid over the surface of the cooling plate, so that the wafer 28 held by the wafer holder 38 receives a more uniform cooling effect. Suitable cooling fluids for use with the cooling fluid conduits 44 include cold water and liquid nitrogen. However, it is not limited to such fluids. Suitable materials for the cooling plate 42 include high thermal conductivity materials and / or high heat release materials such as silicon carbide, aluminum, stainless steel, copper and aluminum nitride coated with silicon nitride. However, it is not limited to such materials.

In the case where the cooling source 40 is a cold plate 42, in order to provide a substantially uniform wafer 28 cooling, the cold plate 42 is preferably continuous substantially parallel to the plane of the wafer 28. It has an upper surface 46. However, the cold plate 42 may include a number of openings large enough to receive the wafer support pins 34, or the wafer support pins 34 mount directly to the top surface 46 of the cold plate 42. May be

Preferably, the upper surface 46 of the cold plate 42 has a circumference greater than the circumference of the wafer 28. Further, preferably, the cold plate 42 is disposed approximately concentrically with the wafer 28 positioned on the wafer support pin 34 or with the wafer 28 held by the wafer holder 38. For example, preferably, the cooling plate 42 has a rounded shape with a larger diameter than the wafer 28. The round shape of the cooling plate 42 is disposed so that the center of the cooling plate 42 is located substantially below the center of the wafer 28. This concentric arrangement, along with the increased diameter of the cold plate 42 relative to the wafer 28, allows the perimeter of the cold plate 42 to extend beyond the perimeter of the wafer 28.

Wafer holder 38 is coupled with shaft 48. The shaft 48 is coupled with a lifting mechanism (not shown) that moves the shaft 48 up and down. As shown in FIG. 1B, the upward movement of the shaft 48 raises the wafer holder 38. When the wafer holder 38 is in the stowed position as shown in FIG. 1A, the rise of the wafer holder 38 raises the wafer 28 from the wafer support pins 34 and raises the wafer holder 38 into the cooling chamber ( From 32 to the heating chamber 18. The shaft 48 can also be moved downwards to move the wafer holder 38 from the heating chamber 18 to the cooling chamber 32 and to replace the wafer 28 on the wafer support pin 34. do. Although the wafer holder 38 is shown coupled to one shaft 48, the wafer holder 38 may be coupled to two, three and four multiple shafts 48, but the number is not limited. . The heat treatment apparatus 10 also includes a cold plate 42, which may include an opening configured to receive each of the shafts 48 associated with the wafer holder 38.

As shown in FIG. 1B, the heat treatment apparatus 10 includes a shutter 52 that determines the size of the passage 54 between the cooling chamber 32 and the heating chamber 18. The shutter 52 shown in FIG. 1B is open, in which the shutter 52 defines a passage 54 large enough to allow the wafer holder 38 to pass between the heating chamber 18 and the cooling chamber 32. It is located at the position.

The shutter 52 can be combined with a motor 56 that moves the shutter 52 on a horizontal plane along the direction shown by arrow B. FIG. Thus, the shutter 52 can be moved to the blocking position, forming a passage 54 smaller than the size of the passage 54 formed when the shutter 52 is in the open position. For example, FIG. 1C shows the shutter 52 in the blocking position, where the size of the passage 54 approaches the size of the shaft 48 connected to the wafer holder 38. Thus, while the wafer holder 38 is disposed in the heating chamber 18, the shutter 52 can be in the blocking position. The configuration shown in FIG. 1C is a preferred configuration for the heat treatment apparatus 10 while the wafer 28 is being processed.

Processing of the wafer 28 includes supplying fluid, gas or vapor to the wafer 28 in the heating chamber 18. The blocking position of the shutter 52 shown in FIG. 1C serves to reduce or prevent the flow of fluid from the heating chamber 18 into the cooling chamber 32. Thus, the shutter 52 prevents this fluid from being contaminated in the cooling chamber 32 or the associated load / lock chamber.

The shutter 52 may also be configured to act as a thermal insulation. When the shutter 52 is configured as a heat insulator and the shutter 52 is in the blocking position, the shutter 52 functions to increase the heat insulation of the heating chamber 18 and the cooling chamber 32. By the increased adiabatic effect, the temperature difference between the average temperature in the heating chamber 18 and the average temperature in the cooling chamber 32 can be enlarged. In particular, the ratio of the average temperature in the heating chamber 18 to the average temperature in the cooling chamber 32 may be larger than without the shutter 52. As a result, the wafer 28 can be heated and / or cooled more quickly in the absence of the shutter 52. Increasing the adiabatic effect also reduces the amount of energy required to maintain the average temperature within the cooling chamber 32 and the heating chamber 18 within a certain range.

When the shutter 52 acts as a thermal insulation, the shutter 52 also functions to reduce the temperature drop between the shutter 52 and the heating plate 26. Thus, the temperature near the top of the shutter can be closer to the hot plate than the temperature attainable in the absence of the shutter 52. As a result, the temperature in the heating chamber 18 approaches isothermal, which can improve the repeatability of work and run-to-run and the uniformity of wafer temperature. In addition, the nearly isothermal nature of the heating chamber 18 causes fewer cold spots to be formed in the heating chamber 18. Reduction of cold spots improves thermal uniformity in the wafer 28 plane and between the top and bottom of the wafer 28.

1A-1C illustrate a heat treatment apparatus 10 each including a shutter 52, some embodiments of the invention may not include a shutter 52.

2A shows another embodiment of a heat treatment apparatus 10. The heating plate 26 and the processing tube 24 are independent of each other. The heating plate 26 is disposed between the processing tube 24 and the heating element 20. Thus, the heating plate 26 provides a more uniform heat distribution than can be provided by the processing tube 24 alone.

2B shows another embodiment of a heat treatment apparatus 10, in which the heating plate 26 and the processing tube 24 are dependent on each other. The heating plate 26 is disposed in the processing tube 24, so that the heating plate 26 serves as the upper end 22 of the heating chamber 18. Thus, heat from the heating element 20 passes through the processing tube 24 before being dissipated by the heating plate 26. The heating plate 26 may be mounted at the same height relative to the processing tube 24, or an air gap may be formed between the processing tube 24 and the heating plate 26. Another embodiment of the heat treatment apparatus 10 does not include a heating plate 26. Similarly, a cooling source may be removed from an embodiment of a particular heat treatment apparatus 10, such as the embodiment of the heat treatment apparatus 10 shown in FIG. 1C.

As shown in FIG. 3, the cooling source may comprise a plurality of cooling fluid conduits for the supply of cooling fluid. Such cooling fluid conduits may be oriented to face the surface of the wafer 28 in the cooling chamber 32, or may supply cooling fluid into the cooling chamber 32 at a point remote from the wafer 28.

Optionally, the cooling fluid conduit may be shaped into a loop around the perimeter of the wafer holder 38. The looped cooling fluid conduit may be located in the cooling chamber 32 such that the wafer holder 38 may move through the cooling fluid conduit when the wafer holder 38 carries the wafer 28. Additionally, the looped cooling fluid conduit can have cooling fluid ports disposed along the circumference of the loop. Cooling fluid can be supplied simultaneously from a number of different cooling fluid ports, such that cooling fluid can be showered into the wafer 28 in the cooling chamber 32. The shower effect makes it possible to obtain more uniform wafer 28 cooling than can be obtained by intermittent cooling fluid conduits, and allows forced convective cooling.

Although FIG. 3 illustrates a cooling fluid conduit used without a cooling plate 42, one or more cooling fluid conduits may be used with the cooling plate to increase the temperature drop of the wafer 28.

As noted above, processing of the wafer 28 in the wafer holder 38 may include supplying fluid to the surface of the wafer 28 in the heating chamber 18. The description below relates to various fluid supply systems. Each of the heat treatment apparatuses 10 described above can be modified to be used with the fluid supply system described below. Further, the above description of the upper end 22 of the heating chamber 18 may be defined by the heating plate 26 or by the processing tube 24. As a result, the upper end 22 of the heating chamber 18 described below may be defined by the heating plate 26 or the processing tube 24.

4A shows the bottom of the upper end 22 of the heating chamber 18. The upper end 22 of the heating chamber 18 includes a plurality of fluid ports 70. This fluid port 70 is formed in the heating plate 26 or the processing tube 24, depending on which of the processing tube 24 or the heating plate 26 acts as the upper end 22 of the heating chamber 18. Fluid port 70 is in fluid communication with one or more fluid sources. Fluid from the fluid source is supplied to the heating chamber 18 and / or the cooling chamber 32 through the fluid port 70. Due to the position of the fluid port 70 disposed above the wafer 28, fluid from the fluid port 70 flows downward onto the wafer 28. A discharge conduit (not shown) may be disposed in the cooling chamber 32 or in the heating chamber 18 to remove the fluid supplied into the heating chamber 18. Preferably, the fluid discharge conduit is disposed adjacent to the bottom of the heating chamber 18 and thus below the wafer 28 during processing of the wafer 28. Due to this location of the fluid discharge port 93 relative to the wafer 28 during processing of the wafer 28, fluid supplied from the fluid port 70 in the heating plate 26 flows down onto the surface of the wafer 28. It moves downward to the fluid outlet port.

As shown in FIG. 4A, the fluid port 70 may be uniformly distributed over the upper end 22 of the heating chamber 18. For example, the fluid ports 70 may be aligned in one of several different lattice patterns or in concentric geometric shapes. This uniform distribution of the fluid port 70 facilitates a uniform fluid supply across the plane of the wafer 28 and facilitates the plug-like flow of fluid from the upper end 22 of the heating chamber 18 toward the wafer 28. To promote. This uniformity is very important in processes such as chemical vapor deposition where non-uniform distribution of fluids across the wafer 28 can result in uneven deposition. The number of fluid ports 70 in the heating chamber 18 is preferably between 0 and 1000, more preferably between 200 and 800, most preferably between 550 and 650. The distance between adjacent fluid ports 70 is preferably 0.0 to 0.5 inches and more preferably 0.1 to 0.4 inches.

As an example, FIG. 4B provides a cross sectional view of an upper end 22 of a heating chamber 18 having multiple fluid ports 70. The fluid port 70 is connected to the conduit 80 formed in the heating plate 26. Conduit 80 terminates at a fixture 82 configured to connect with the fluid conduit. The fluid conduit may be used to transfer fluid into the heating chamber 18 through the fluid port 70 and / or may be used to withdraw fluid from the heating chamber 18 through the fluid port 70.

4C shows another example of the upper end 22 of the heating chamber 18. The fluid port 70 extends through the portion of the processing tube 24 that forms the upper end 22 of the heating chamber 18. The outer lumen 84 is connected to the top of the upper end 22 of the heating chamber 18 such that the lumen is in fluid communication with each fluid port 70.

The fluid port can be divided into a first fluid port 70 group and a second fluid port group. The first group of fluid ports 70 may be in fluid communication with the first fluid conduit, and the second group of fluid ports 70 may be in fluid communication with a second fluid conduit independent of the first fluid conduit. Different fluids may be supplied to each other through the first fluid conduit and the second fluid conduit. As a result, fluid different from that supplied from the second fluid port 70 group can be supplied from the first fluid port 70 group. Optionally, a first fluid conduit can be used to supply fluid into the heating chamber 18 and a second fluid conduit can be used to recover the fluid from the heating chamber 18.

The fluid supply system is shown in FIG. 5A, in which case the heat treatment apparatus 10 is fluid inlet conduit 88 terminated at fluid inlet port 90 and fluid outlet conduit 92 terminated at fluid outlet port 93. ). Fluid inlet port 90 and fluid outlet port 93 may be located anywhere within heating chamber 18. However, the fluid inlet port 90 and the fluid outlet port 93 are preferably at a height above the surface of the wafer 28 during processing of the wafer 28. This position of the fluid inlet port and the fluid outlet port allows fluid to flow from the fluid inlet port 90 across the surface of the wafer 28 to the fluid outlet port 93. Thus, a fluid flow region is formed between the upper end of the heating chamber and the wafer during processing of the wafer.

As shown in FIG. 5B, during processing of the wafer 28, the fluid inlet port 90 may be disposed above the wafer 28, and the fluid outlet port 93 is in the heating chamber 18 or It may be disposed below the wafer 28 in the cooling chamber 32. This position of the fluid inlet port 90 relative to the fluid outlet port 93 creates a downward fluid flow in the heating chamber 18. Optionally, the fluid conduits may be operated in reverse such that the fluid outlet port 93 is above the wafer 28 and the fluid inlet port 90 is below the wafer 28 during processing of the wafer 28. It may be.

6A shows a heating chamber 18, which includes a flow arrester 94 extending inwardly from the side of the processing tube 24. As shown, the wafer 28 may be disposed in the heating chamber 18 such that the wafer 28 and the flow detaining member 94 form a lower portion of the fluid flow region 96 within the heating chamber 18. have. Suitable materials for the flow arrester 94 include high purity quartz, fused silica, and silicon carbide. However, it is not limited to the material. Flow arrest member 94 may be integral with processing tube 24 or may be a separate component attached to processing tube 24 using techniques such as welding.

FIG. 6B is a cross-sectional view of the processing tube 24 shown downward into the heating chamber 18 at the axis indicated by A in FIG. 6A. The inner edge 98 of the flow arrester 94 has a shape complementary to the shape of the portion around the wafer. In addition, the inner edge 98 of the flow arrester 94 is larger than the portion around the wafer that corresponds to the inner edge. Due to the difference in the circumferential size of the wafer 28 and the circumferential size of the inner edge 98 of the flow detaining plate, the wafer 28 is gap between the wafer 28 and the inner edge 98 of the flow detaining member 94. It can be positioned adjacent flow detent member 94 while forming 100. This gap 100 provides a path through which fluid supplied to the fluid flow region 96 can exit the fluid flow region 96. An auxiliary fluid discharge conduit 102 with an auxiliary fluid discharge port 104 is optionally disposed below the flow arrester 94 for discharging fluid exiting the heating chamber 18 into the fluid flow region 96. Can be.

Flow detaining member 94 is sized to form a gap 100, which reduces the flow of fluid from the fluid flow region 96 into the rest of the heating chamber 18.

During the supply of fluid into the heating chamber 18, the wafer 28 is preferably disposed adjacent to the flow arrester 94. The fluid flow region 96 limits the volume of the atmosphere in the heating chamber 18 that must be controlled during the processing of the wafer 28. Atmospheric conditions can be controlled more easily in the fluid flow region 96 than can be obtained in the entire heating chamber 18 because they are easier to control when they are less than when they are large. For example, the uniformity of temperature is more easily controlled for smaller volumes than for larger volumes. Thus, the fluid flow region 96 makes it easier to control the temperature.

The fluid flow region 96 simplifies the process of exchanging gases within the heating chamber 18 while reducing the interaction between the gases. Preferably, the distance between the upper end 22 of the heating chamber 18 and the bottom side of the fluid flow region 96 is substantially constant. Such constant distance promotes fluid flow from the fluid inlet conduit to the fluid outlet conduit in a plug flow pattern. The plug flow pattern allows one gas to follow another while only minimal interaction occurs. As a result, the flow of one fluid through the fluid flow region 96 ends and at the same time the flow of the other fluid begins, such that the fluid in the fluid flow region 96 is subject to subsequent fluid flow through the fluid flow region 96. Exchanged by To further reduce the interaction between the fluids, a time delay may be placed between the end of the first fluid flow and the onset of the second fluid flow.

6A and 6B show one fluid inlet conduit 88 having one fluid outlet port 93 and / or one fluid inlet conduit 88 having one fluid inlet port 90, The heat treatment apparatus 10 may include a plurality of fluid inlet conduits 88 and / or a plurality of fluid outlet conduits 92. In addition, one fluid inlet conduit 88 may have multiple fluid inlet ports 90. Additionally, the heat treatment apparatus 10 may have a plurality of fluid discharge conduits 92, and one fluid discharge conduit 92 may include a plurality of fluid discharge ports 93. Increasing the number of fluid conduits and the number of fluid ports in the heat treatment apparatus 10 allows greater control over the conditions of the fluid on the wafer 28 surface.

FIG. 6C is a cross-sectional view of a rectangular processing tube 24 showing the state viewed downwards inside the heating chamber 18 at the axis indicated by A in FIG. 6A. The heat treatment apparatus 10 includes a plurality of fluid inlet ports disposed above the flow arrester 94. Each fluid inlet port is aligned with a fluid outlet port on an opposite side of the fluid flow region 96. Multiple fluid inlet ports and fluid outlet ports can enhance plug flow characteristics of fluid flow across the surface of wafer 28.

6D shows a heat treatment apparatus 10 having a plurality of flow restraining members 94 aligned on opposite sides of the heating chamber 18. The inner edge 98 of each flow arrester 94 has a shape that is complementary to the shape of a portion around the wafer. In addition, the inner edge 98 of each flow retaining member 94 is larger than the portion around the wafer of the corresponding shape. As a result, each flow detaining member 94 may be disposed adjacent to a portion of the wafer 28, forming a gap 100 between the wafer 28 and the inner edge 98 of the flow detaining member 94. have.

FIG. 7A shows the flow distribution member 106 positioned between the flow confinement member 94 and the wall of the processing tube 24. Flow distribution member 106 is particularly suitable for oxidative and atmospheric processing. Flow distribution member 106 is associated with a fluid inlet conduit, and flow distribution member 106 is associated with a fluid outlet conduit. The flow distribution member 106 may be located at the inner edge 98 of the flow restraint plate or may be adjacent to the wall of the processing tube 24. A plurality of openings 108 are formed through the flow distribution member 106. The opening 108 preferably has a diameter of 0.01 to 0.1 inches, more preferably 0.15 to 0.02 inches, most preferably 0.02 to 0.03 inches. Preferably, the opening 108 is spaced apart from the flow distribution member to obtain a plug-like flow. The openings 108 may have different sizes from each other to promote more uniform flow. For example, the opening 108 located directly in front of the fluid inlet port may have a smaller diameter than the opening 108 located at the circumference of the fluid inlet port. Such a small diameter facilitates fluid flow from the perimeter to the opening 108. Another embodiment of the flow distribution member 106 includes a mesh screen and a wire grid. But it is not limited to that. The number, size, and arrangement of openings 108 in the flow distribution member 106 associated with the fluid inlet conduits may be the same as or different from the number of openings 108 in the flow distribution member 106 associated with the fluid outlet conduits.

The wall of the processing tube 24 and the flow distribution member 106 work together to form a fluid flow distribution chamber 110 around the fluid inlet port. The flow distribution chamber 110 enlarges the area through which the fluid passes to enter the fluid flow region 96, which is larger than the area without the flow distribution chamber 110. Flow distribution chamber 110 may also be formed around the fluid discharge port. The flow distribution chamber 110 around the fluid discharge port can act to make the flow of fluid leaving the fluid flow region 96 more spread. As a result, this flow distribution chamber prevents the fluid in the fluid flow region 96 from converging at the fluid discharge port. The effect of the flow distribution chamber 110 formed around the fluid inlet port and the fluid chamber formed around the fluid outlet port increases the plug flow characteristics of the fluid flow across the surface of the wafer 28.

Flow distribution chamber 110 may also be configured in other ways. For example, the flow distribution chamber 110 may be filled with a porous medium or diffusion material, such as a metal chip.

7C is a cross sectional view of the processing tube 24 having a round cross-section. The flow distribution chamber 110 around the fluid inlet port and the flow distribution chamber 110 around the fluid outlet port are arcuate. Although the flow distribution chamber 110 is shown as an arc of more than 180 degrees, an arc-shaped flow distribution chamber 110 over smaller angles can also be expected.

7D shows a processing tube 24 of round cross section and a flow distribution member 106 of straight appearance. This geometry has the advantage that the flow distribution chambers 110 are at a constant distance along the length. As a result, the distance that the fluid travels between the flow distribution chambers 110 is more uniform when the flow distribution member 106 has a curved appearance. Increased uniformity increases the similarity between the fluid flow conditions at the center of the wafer 28 and the fluid flow conditions at the edge of the wafer 28, between the two flow distribution chambers 110.

7E is a cross sectional view of the processing tube 24 in a rectangular cross section. Both flow distribution members 106 have a straight appearance. This geometry has the advantage associated with flow distribution chambers 110 spaced apart from each other along a length.

7A-7E illustrate one fluid inlet port and one fluid outlet port respectively associated with each flow distribution chamber 110, each flow distribution chamber 110 may have multiple fluid inlet ports and / or multiple fluid inlets. It may be associated with the fluid discharge port of the.

As shown in FIG. 8, the flow distribution chamber 110 may be formed in part by a second flow detaining member 94 extending inwardly from the side of the processing tube 24. The flow distribution member 106 is located between the flow arrest member 94 and the second flow arrest member 94. The second flow detaining member 94 may optionally include a recess sized to receive the edge of the heating plate 26. As a result, the second flow detaining member 94 can support the heating plate 26. The heating plate 26 may be mounted at the same height as the processing tube 24 or an air gap may be formed between the processing tube 24 and the heating plate 26.

One heating chamber 18 may include several flow distribution chambers 110 disposed at different heights from one another. As a result, the wafer 28 can be processed at different intervals from the top of the heating chamber 18.

9A shows a cross section of a heat treatment apparatus 10 having an enlarged fluid inlet port and an enlarged fluid outlet port. During processing of the wafer, the wafer is preferably placed adjacent to the lowest point of the fluid inlet port. A portion of the fluid inlet conduit, the fluid flow region, and the fluid outlet conduit are combined to extend through the fluid inlet conduit, the fluid flow region and the portion of the fluid outlet conduit, and the fluid flow passage 112 having substantially the same cross-sectional geometry. ). The substantially constant cross-sectional geometry means that the fluid flow pattern in one portion of the flow passage 112 is substantially maintained through the flow passage 112. This allows the flow pattern in the fluid inlet port to be maintained across the fluid flow region. As a result, when a plug-like flow is generated at the fluid inlet port, the plug-like flow is substantially maintained through the fluid flow region.

FIG. 9B is a cross sectional view of the processing tube 24 showing the state downwardly toward the inside of the processing tube 24 at the axis indicated by A, and FIG. 9C is upwardly toward the inside of the processing tube 24 at the axis indicated by B. FIG. It is sectional drawing of the processing tube 24 which shows this state. Fluid flow region 96 is formed in part by flow region forming walls 114 disposed on opposite surfaces of the flow region. Flow region forming wall 114 may have various positions with respect to fluid inlet conduits and fluid outlet conduits. For example, FIG. 9D is a cross sectional view of the processing tube 24, wherein the flow region forming wall 114 is sized such that the fluid inlet conduit is spaced apart from the fluid outlet conduit.

Flow distribution member 106 is located in the fluid inlet conduit. Similarly, flow distribution member 106 is located in the fluid discharge conduit. As a result, the flow distribution chamber 110 is formed in the fluid inlet conduit and the fluid outlet conduit. Flow distribution member 106 may be disposed at the fluid inlet port along the length of the fluid discharge conduit. The flow distribution member 106 serves to spread the fluid flow over the width of the fluid inlet conduit and / or the fluid outlet conduit. As a result, the flow distribution member 106 promotes plug-like flow in the fluid flow passage 112.

The fluid inlet conduit and the fluid outlet conduit have a shape that matches the shape of the fluid flow region 96. As shown, the fluid flow region 96 has a width the same as the width of the wafer 28. As a result, the fluid inlet conduit and the fluid outlet conduit have a width W about the same as the wafer diameter. Similarly, the fluid flow region 96 has a thickness that is equal to the thickness of the fluid inlet port. As a result, the fluid inlet conduit and the fluid outlet conduit have a thickness T close to the thickness of the fluid inlet port. Due to the constant shape of the fluid inlet conduit, fluid flow region 96, and fluid outlet conduit, fluid may maintain a similar flow pattern in each of the fluid inlet conduit, fluid flow region 96, and fluid outlet conduit. As a result, the fluid flow pattern at the wafer surface can be controlled by controlling the fluid flow pattern in the fluid inlet conduit.

Although shown integrally with the processing tube, the fluid inlet conduit and fluid outlet conduit may have a shape that matches the fluid flow region 96 and may be independent of the shape of the processing tube 24.

One processing tube 24 may comprise a combination of the fluid supply systems described above. For example, one heat treatment apparatus 10 includes a fluid port 70 aligned with a heating plate 26, a fluid inlet conduit 88, and a fluid discharge conduit disposed on opposite sides of the fluid flow region 96. 92).

10A shows the side of a shutter 52 designed to provide an adiabatic effect. The shutter 52 is composed of a plurality of members 116. Suitable materials for constructing such member 116 include quartz covered with insulator, silicon carbide, opaque quartz and fused silica. However, it is not limited to these materials. The members 116 are aligned such that an air gap 118 is at least partially formed between adjacent members 116. Because of the low thermal conductivity of air, this open air gap 118 adds thermal insulation to the shutter 52.

Preferably, the open air gap 118 has a height slightly greater than the thickness of each member 116. Due to the open nature of the air gap 118, the shutters 52 may be engaged with each other, as shown in FIG. 10B. In particular, a portion of one shutter 52 slides into a portion of another shutter 52. When one shutter 52 slides into another shutter 52, preferably, the members of the opposing shutters 52 do not come into contact with each other, thereby preventing generation of particles in the heating chamber 18.

FIG. 11A is a plan view of the shutter 52 showing the case where the shutters 52 are in the blocking position shown in FIG. 1C. The shutter 52 includes a recess 120 having a geometric shape corresponding to the shape and size of the shaft 48 connected with the wafer holder 38. Thus, when the wafer holder 38 is positioned in the heating chamber 18, the shutters 52 can be moved together, such that the shutters form a passage 54 shaped like the shape of the shaft 48. do. Since the passage 54 has a shape complementary to the shaft 48, the shaft 48 is inserted into the passage 54 to reduce gas exchange between the heating chamber 18 and the cooling chamber 32 and to heat up. The radiation heat transfer between the chamber 18 and the cooling chamber 32 is reduced. This shape also serves to reduce the heat transfer from the heating chamber 18 to the cooling chamber 32.

11B is a plan view of the shutter 52 showing the case where the shutters 52 are in the same blocking position as the position of the shutter shown in FIG. 1A. The shutters 52 slide away from each other enough to close the passage 54 effectively. When the wafer holder 38 is located in the cooling chamber 32, the passage 54 is closed to enhance the thermal insulation effect of the cooling chamber 32 and the heating chamber 18. Thus, the shutter configuration of FIG. 11B is desirable when the wafer holder 38 is located in the cooling chamber 32.

11C shows one shutter 52 that can be used to determine the size of the opening. One shutter 52 includes a deep recess 120 that receives the shutter 52 when the shutter 52 is in the blocking position and the wafer holder 38 is in the heating chamber 18. Preferably, the recess 120 is deep enough so that the shutter 52 across the passage 54 between the cooling chamber 32 and the heating chamber 18 when the wafer holder 38 is located in the heating chamber 18. ) May be extended.

The shutter 52 shown in FIGS. 11A-11C includes one recess 120 for receiving a shaft 48 coupled with the wafer holder 38; However, the shutter 52 may also include a plurality of recesses 120 for receiving a plurality of shafts 48 coupled with the wafer holder 38.

Although the above-described shutter 52 may be composed of a plurality of members 116, each shutter 52 may be composed of one member 116. Also, each passage 54 described above is constructed from two shutters; The heat treatment apparatus 10 may include three or more shutters 52 forming one passage 54. In another embodiment, seven shutters 52 are moved into one recess.

12A-12D show a possible arrangement of the heating elements 20 used with the heat treatment apparatus 10 described above. The heating elements 20 are each arranged in concentric heating zones 122. In particular, the heating elements 20 in the heating region 122 may be arranged in concentric circles as shown in FIG. 12A. Optionally, as shown in FIG. 12B, one rounded heating element 20 may occupy the heating region 122. The heating elements 20 in the different heating zones 122 are preferably controlled independently. If multiple heating elements 20 are included in a particular heating region 122, the heating elements 20 may be electrically connected in series or in parallel or controlled respectively. Thermocouples may be provided at the center of each region to provide temperature feedback.

As shown in FIG. 12C, a thermal barrier 124 may be located between the heating regions 122. As shown in FIG. 12D, the thermal barrier 124 may extend from the thermal insulation 16 toward the processing tube 24 and may be coupled to the processing tube 24. In other embodiments, the thermal barrier 124 may extend from the thermal insulation towards the heating plate 26 and may be coupled to the heating plate 26.

The thermal barrier 124 may reduce cross talk of heat generated by the heating elements 20 in the different heating zones 122. As a result, heat generated in the particular heating zone 122 is directed to the heating plate 26 or the processing tube 24. Thus, the adjustment to the particular heating element 20 primarily affects the portion of the processing tube 24 or the heating plate 26 adjacent to the controlled heating element 20. As a result, the thermal barrier 124 allows better control over thermal conditions within the heating chamber 18. Although FIGS. 12A-12D show a processing tube 24 of round cross section, the heating element 20 and thermal barrier 124 may be applied to the processing tube 24 of rectangular cross section.

13 discloses a heat treatment apparatus 10 having a shaft conduit 126 extending from a cooling chamber 32. Shaft conduit 126 surrounds a portion of shaft 48 that extends below cooling chamber 32. The shaft conduit 126 may be integral with the frame of the cooling chamber 32 or may be a separate piece attached to the frame of the cooling chamber 32. Optionally, shaft conduit 126 may be a bellows (not shown) in an “accordion” shape. Any of the heat treatment devices 10 described above may utilize shaft conduits 126.

A seal 128 is formed between the shaft conduit 126 and the shaft 48 at a location remote from the cooling chamber 32. The seal 128 serves to reduce the escape of fluid from the cooling chamber 32 and / or to reduce the flow of fluid into the cooling chamber 32 from the atmosphere. As a result, the seal 128 helps to thermally and physically isolate the cooling chamber 32 from the atmosphere. This isolation enhances the regulation of the atmosphere within the cooling chamber 32.

The spaced position of the seal 128 reduces the heat applied to the seal 128. For example, while the wafer 28 is located in the heating chamber 18, the portion of the shaft 48 in the heating chamber 18 will be heated. However, the lower part of the shaft 48 is kept at a low temperature because of its proximity to the cooling chamber 32 and / or because of the short duration of time in the heating chamber 18. Due to the location of the seal 128 away from the cooling chamber 32, the seal 128 is exposed at the bottom of the shaft 48 more than if disposed in or adjacent to the cooling chamber 32. As a result, the position of the seal 128 away from the cooling chamber 32 serves to protect the seal 128 from thermal damage, thereby making it possible to preserve the seal 128. The distance from the cooling chamber 32 to the seal 128 is preferably about the same as the maximum distance that the shaft 48 extends into the heating chamber 18.

The seal 128 may be formed at the junction of the cooling chamber 32 and the shaft 48. Such a seal 128 may be used in place of, or in conjunction with, the seal 128 between the shaft 48 and the shaft conduit 126.

The invention also relates to a method of operating the heat treatment apparatus 10. During operation of the heat treatment apparatus 10, the wafer holder 38 may be located anywhere within the heating chamber 18 while raising the wafer 28 temperature. However, the wafer 28 is preferably placed proximate to the heating plate 26 so that heat is transferred to the wafer 28 through the air between the heating plate 26 and the wafer 28. In addition, since the wafer 28 receives heat rays radiated from the heating plate 26, the approach of the wafer 28 and the heating plate 26 is simultaneously heated by both the radiation and the conduction. These two heat transfer mechanisms accelerate the temperature rise. However, the present invention is not limited to the above, and may be operated in a non-conductive mode when the wafer is far from the hot plate.

During the temperature rise and when the wafer 28 is close to the heating plate 26 such that conduction occurs, the heat transferred by conduction in the heat transferred to the wafer 28 is preferably 20-90%, more preferably 20-. 70%. During the temperature rise, the wafer 28 is preferably disposed within 2 mm from the heating plate 26, and more preferably within 1 mm from the heating plate 26. However, the distance between the wafer 28 and the heating plate 26 required to allow a certain amount of heat to be transferred by conduction is a function of the temperature of the heating plate 26. For example, when the temperature of the heating plate 26 is about 900 ° C., the wafer 28 is preferably disposed within 2 mm from the heating plate 26. However, when the temperature of the heating plate 26 is about 500 ° C., the wafer 28 is preferably disposed within 0.8 mm from the heating plate 26. The distance between the wafer 28 and the heating plate 26 can be changed during processing of the wafer to control the heating rate. For example, the temperature rise rate can be increased by moving the wafer closer to the heating plate 26.

FIG. 14 shows a comparison of heat flux due to radiation and heat flux due to conduction at two displacement points having different distances from the heating plate 26 to the wafer. Heat transfer is mainly by radiation. But; As shown, the percentage of heat flux due to conduction increases as the wafer approaches the heating plate 26. For example, at 900 ° C. and 0.2 mm away from the heating plate 26, the heat flux due to conduction is about two thirds of the total heat flux. However, at 900 ° C. and 1 mm away from the heating plate 26, the heat flux due to conduction is reduced to about one third of the total heat flux. As a result, in order to take advantage of the conductive heat flux, the wafer must be placed close to the heating plate 26.

After the target conditions are obtained at the wafer 28, the wafer 28 is processed. For example, when the wafer 28 reaches the target temperature, fluid is supplied into the heating chamber 18. Optionally, when the wafer 28 reaches the target temperature, the wafer 28 may be retracted from the heating plate 26. Retracting the wafer 28 from the heating plate 26 serves to move the wafer 28 below the fluid inlet port 90 connected to the fluid inlet conduit 88 or between the wafer 28 and the heating plate 26. It is also possible to improve the fluid flow characteristic on the wafer 28 by increasing the gap of.

During the processing of the wafer 28, the wafer holder 38 can be rotated to rotate the wafer 28. When the wafer 28 is rotated, the wafer 28 is preferably 0 to 600 r.p.m. And more preferably 5 to 15 r.p.m. Is rotated. Rotation of the wafer 28 allows the wafer 28 to be more evenly exposed to the fluid supplied into the heating chamber 18 during processing of the wafer 28. Rotation of the wafer 28 also provides more uniform heat distribution.

After wafer 28 has been processed in heating chamber 18, shutter 52 may be opened and wafer holder 38 may be lowered into cooling chamber 32. Prior to the wafer 28 being removed from the wafer holder 38, target conditions are obtained at the wafer 28. For example, before the wafer 28 is removed from the wafer holder 38, the temperature of the wafer 28 can be lowered to a desired temperature range.

In another embodiment of the present invention, a heat treatment apparatus and a wafer holder are provided that are configured to facilitate more uniform heating of a wafer supported by a wafer holder. In particular, a wafer holder and a heat treatment apparatus are provided which minimize the thermal stress of the wafer by heating and cooling in the heat treatment apparatus. When the wafer is heated in the heating chamber, the circumferential edge of the wafer will heat faster than the center of the wafer. Similarly, the peripheral edge of the wafer will cool faster than the center of the wafer. This temperature difference between the edge and the center of the wafer creates thermal stress in the wafer. Such thermal stress is particularly problematic at high temperatures and may lead to defects in the semiconductor devices formed on the wafer.

In order to solve this problem, the wafer holder and the heat treatment apparatus of the present invention have been configured to slow down the heat rising rate of the peripheral edge of the wafer. This is accomplished by employing a wafer holder with edge action members disposed proximate to at least a portion of the circumferential edge of the wafer. One embodiment of a wafer holder having an edge action member in accordance with the present invention is shown in FIG. 15. Wafer holder 138 includes one or more wafer support members 140 and edge action members 142. One or more wafer support members 140 hold the wafer in the wafer holder 138 and support the wafer in a substantially flat manner. The wafer support member 140 may be any suitable support member, and is not limited to any particular design. One embodiment of a suitable support member 140 includes a plurality of upwardly extending pins, a flat base plate, a recessed base plate, an annular ring, a safety ring, and the like. However, it is not limited to them. In particular, wafer support member 140 ensures reliable support and retention of the wafer during rotation of the wafer support. The wafer holder 138 is coupled to a shaft 48 that raises and lowers the wafer holder in the heat treatment apparatus 10.

As a particular advantage, the wafer holder 138 includes an edge action member 142. As described in more detail below, during heating and cooling the wafer in the heat treatment apparatus, the edge action member 142 minimizes the occurrence of a temperature difference between the wafer edge and the wafer center. 15, a wafer holder 138 with an edge action member 142 is shown, according to one embodiment. The wafer holder 138 includes a support base 140 including a flat base plate 141 extending over the entire wafer diameter and an upwardly extending edge action member 142 located near the circumferential edge of the base plate 141. Include. The edge action member 142 is spaced apart from the circumferential edge of the wafer 28. Edge action member 142 includes a circular band that is vertically oriented (ie, perpendicular to the wafer), the circular band extending upward from base plate 141 and surrounding at least a portion of the circumferential edge of wafer 28. All. Preferably, the edge acting member 142 surrounds a significant circumferential edge of the wafer, most preferably the edge acting member 142 surrounds the entire circumference of the wafer. The edge action member 142 may be integrally formed with the base plate 141 or may be formed as a separate cross section attached to the base plate 141 through a known technique such as welding. In this embodiment, the edge action member 142 extends over the position of the wafer, thereby creating a thermal barrier around the perimeter of the wafer. Thus, in addition to providing a thermal mass near the edge of the wafer, the edge acting member 142 also blocks any radiant heat from the side walls of the heating chamber.

The edge action member 142 provides a thermal mass disposed near the circumferential edge of the wafer. Such thermal mass will take heat away from the edge of the wafer if the temperature of the thermal mass during heating is lower than the temperature of the wafer. To facilitate this, the wafer holder with the edge action member is designed to have a thermal mass larger than that of the wafer (or other base material), thereby increasing the energy absorption rate. As shown in FIG. 15, the wafer holder and the edge action member of the holder have a thickness of t ₁ and t ₂ . Wafer holder materials that can provide adequate thermal mass include quartz, silicon carbide, Al ₂ O ₃ , fused silica, silicon, or ceramics. However, it is not limited to such materials alone. The wafer holder and the edge action member are typically made of the same material. However, they may be made of different materials from each other. The thickness t ₁ and / or t ₂ of the wafer holder capable of providing a suitable thermal mass is about 0 to 10 mm, more preferably about 0.5 to 4 mm and most preferably about 0.75 to 2 mm. . To those skilled in the art, variables such as volume and thickness design conditions and material properties of density, specific heat, emissivity and reflectivity can be used to produce the desired thermal mass for energy absorption and thus to obtain the desired temperature profile across the wafer. It will be appreciated that it may be chosen. Of course, different types of heating devices and wafers of the type described above will require different sizes and arrangements of edge action members. In silicon wafers, the desired purpose is typically to minimize the temperature deviation within the wafer (ie, between the edge and the center), so that the edge action member is employed to promote substantially uniform heating and cooling across the wafer.

In a preferred embodiment, the edge action member according to the invention is made of an opaque or partially opaque material. This provides the additional advantage of selectively blocking radiant heat transfer from the heating source to the edge of the wafer. In order to properly match the blocking of radiant heat transfer, the edge action member may be arranged to be oriented in various different directions with respect to the wafer. For example, as will be described in more detail below, an edge action member is disposed above the circumferential edge of the wafer, thereby blocking the edge of the wafer from radiation emitted from a heat source at the top of the heating chamber. Preferred materials that provide opacity or partial opacity include quartz, silicon, silicon carbide, fused silica. However, it is not limited only to such materials.

In all the embodiments described, as shown in FIGS. 15 and 16A-16B, the edge action member is spaced apart by a distance d from the circumferential edge of the wafer. In order to provide the required thermal action, the edge action member must be spaced apart by a “distance d” up to about 1 inch from the circumferential edge of the wafer 28. Preferably, the edge action member is disposed at a distance of about 0.5 to 10 mm from the circumferential edge of the wafer 28.

Although one embodiment of the edge action member 142 is shown in FIG. 15, the edge action member may be configured in a variety of different shapes. Another embodiment is shown in FIGS. 16A and 16B. FIG. 16A shows a wafer holder with a configuration similar to that shown in FIG. 15, with the edge action member vertically oriented surrounding the circumferential edge of the wafer; Except for this embodiment, the support member 140 includes two outwardly opposing plates 144 that support the wafer along an edge opposite the flat base plate 141 extending over the entire diameter of the wafer. 145). Optionally, the support member 140 is comprised of a circular support disk or ring 143 (see FIG. 17) that supports the wafer along its perimeter.

Two variations of the wafer holder are shown in FIGS. 16B and 16C. The wafer holder 138 includes a support member 140 and an edge action member 148. In this embodiment, the edge action member 148 is spaced apart from the circumferential edge of the wafer 28 and includes a horizontal orientation (ie, oriented parallel to the wafer) that surrounds the circumferential edge or at least a portion of the wafer. . Preferably, the edge action member 148 surrounds a substantial portion of the circumferential edge of the wafer and most preferably surrounds the entire circumference of the wafer. The edge action member 148 may be disposed below the circumferential edge of the wafer as shown in FIG. 16B or above the circumferential edge of the wafer as shown in FIG. 16C. When the edge action member is positioned above the circumferential edge of the wafer, the wafer holder provides the additional effect of preventing heat transfer from the heat source in the top of the heating chamber to the edge of the wafer. This, in addition to the thermal action of the edge action member, helps slow the heating of the edge of the wafer and thus makes the temperature rise rate of the edge of the wafer similar to the rate of rise of the center of the wafer, thereby reducing the temperature non- Reduce uniformity.

In order to provide the desired thermal action at the wafer edge, when the edge action member 148 is disposed parallel to the wafer at the top or bottom of the wafer, the edge action member 148 must extend across the wafer edge. The edge action member 148 will extend the edge of the wafer by more than about 0-10 mm (or less in some cases). The support member 140 will include any suitable support. For example, in FIG. 16B where the edge acting member 148 is disposed below the wafer, the support member 140 extends upward from the horizontal edge acting member 148 to abut a number of straight lines that abut the bottom side of the wafer 28. Pin 150. Optionally, the pins may be supported by another member extending from opposite chamber walls to be supported by the edge action member. Support rings may be used.

In another embodiment shown in FIG. 16C where the edge action member 148 is positioned above the wafer, the support member 140 has an edge action with an outward protrusion 153 extending from the edge action member and protruding below the wafer. And an L-shaped member 152 supported by the member 148. Outward protrusion 153 includes a plurality of pins 154 that abut the bottom side of wafer 28. As will be apparent to those skilled in the art, the support member 140 may be configured in various forms and is not limited to the illustrated embodiment. The only limitation is that the support member provides a firm support of the wafer.

Another embodiment of the present invention is shown in FIG. 16D. In this embodiment, the edge action member 148 includes two portions, top 156a and bottom 156b, similar to an inverted L-shaped band surrounding at least a portion of the wafer. Top 156a is parallel to the horizontal plane of the wafer and is spaced apart from the top of the wafer. Top 156a extends along the wafer edge, thereby blocking at least some of the heat radiated from the heat source in the top of the chamber to the wafer edge. The lower portion 156b is connected to the upper portion 156a. The lower portion 156b is disposed in a vertical direction perpendicular to the horizontal plane of the wafer and spaced apart from the wafer. The top and bottom can be formed integrally, instead they can be formed into two separate pieces and then attached to each other using known techniques such as welding. As a particular advantage, embodiments of such wafer holders (1) inhibit uneven heating and cooling at the edge of the wafer by thermal masses placed adjacent to the edge of the wafer, and (2) wafers from the top of the chamber. Provides a dual effect, blocking at least some of the heat that is radiated to the edges.

17 and 18 show another embodiment of the present invention. In this embodiment, the wafer holder includes a wafer lift assembly 170. In general, wafer lift assembly 170 includes a plurality of lift pins 172 coupled through lift rod 174. Preferably, the lifting rod includes three spokes connected to three lifting pins 172. Lift pins extend and retract through openings in support member 140 to raise and lower wafer 28. For example, when it is desired to receive a wafer for processing, a lift pin is extended, and a wafer 28, typically conveyed by an end action (not shown), is positioned above the pin, after which the wafer is extended. Is placed on the pin. In the extended position, the pin extends by a distance up to the height of the edge action member.

For wafer processing, the lift pins are retracted through the openings in the support member 140, thus placing the wafer on the support member as shown in FIG. After the treatment, the lifting pins extend again, raise the wafer above the edge action member, and remove the wafer.

It is to be understood that support members of various configurations may be used, and that one support member shown in the figures among various different support members may be combined with embodiments of the various different edge action members shown in the figures. Figure 19 illustrates one embodiment of a wafer holder disposed in a heat treatment apparatus in accordance with one embodiment of the present invention. The wafer holder 138 includes a wafer support member 140 and an edge action member 142. The edge action member 142 is close to the flow arrester 94 and spaced apart from the induced arrester such that a gap is formed between the inner diameter of the flow arrester 94 and the outer diameter of the wafer holder 138.

In another aspect of the present invention, the heat treatment apparatus provides for improved confinement of gas in the processing tube, in particular in the heating chamber 18. Referring to FIG. 20, as the process gas is supplied to the surface of the wafer 28 by a fluid supply system, it is desirable to leave these gases in the high temperature region (ie, the heating chamber) of the heat treatment apparatus and in the region surrounding the wafer. desirable. In particular, in addition to heat confinement, the use of the shutter 52 can confine the process gas in the heating chamber 18. In one embodiment, a small “gap g1” is provided in the processing tube between the bottom of the process chamber 18 and the top of the shutter 52 and through the gap g1 from the cooling chamber 32 to the heating chamber ( By depressing purge gas 18), such detention is achieved. The pressure difference between the heating chamber 18 and the cooling chamber 32 is maintained, wherein the pressure in the cooling chamber 32 is greater than the pressure in the heating chamber 18. Thus, a positive pressure is set below the shutter 52 in the cooling chamber or in the shutter housing volume, and the positive pressure causes the purge gas to flow into the heating chamber. A second gap g2 may be provided between the opposing shutters 52, the length of which is preferably minimized. Preferably, the gaps g1 and g2 are small so that the purge gas flow rates required to provide detention are small, and the gaps g1 and g2 are preferably about 0.040 to 0.15 inches.

In another embodiment, the detention is provided by the first and second detentions. The second detention is as described in the preceding paragraph, the second detention being made by providing a gap g1 between the bottom of the heating chamber and the top of the shutter and maintaining a constant pressure below the shutter. The first detention of the process gas is obtained by the pressure difference across the flow detention member 94. In this embodiment, the pressure under the flow arrester 94 is greater than the pressure above the member 94, so that purge gas is formed between the inner edge 98 of the flow arrester and the wafer 28. It passes through the 100 and flows to the region above the flow arresting member 94. The region above the flow detent member 94 is where the process gas is supplied to the wafer, and the detention scheme described above facilitates isolation and detention of the process gas in this region.

In order to minimize disruption of the process gas, it is desirable for the pressure differential to be as small as a few inches of water column. In addition, to minimize the effect on the process gas, the purge gas is preferably an inert and ultra-pure gas.

In another embodiment of the present invention, the heat treatment apparatus may employ an additional cooling station. An additional cooling station may be used to cool the wafer more quickly and / or to cool the wafer to a lower temperature (eg, as low as room temperature of about 23 ° C.) prior to removing the wafer from the device. Preferably, the cooling station is arranged adjacent to the cooling chamber 32 but is thermally disconnected from the cooling chamber 32. Insulation from the cooling chamber 32 helps the cooling station disconnect from the effects of the heating chamber. The cooling station includes cooling means for further cooling the wafer. Any suitable means of cooling may be used, such as one or more water cooled plates, thermoelectric cooling plates, parallel water cooled plates and the like. In addition, corrective cooling such as a shower of nitrogen can also be used.

In another embodiment of the invention, the heat treatment apparatus comprises a preheating station. For some applications, it is important to have a very uniform temperature profile in a particular temperature window. This is especially the case when the silicon is processed after implanting. To avoid adverse effects, the overall temperature must be very uniform, at least about 600 ° C. Thus, in one embodiment, a preheating or pre-regulating chamber is provided. The preheat / pre-regulation chamber can be used in two ways. First, the chamber is simply used as a preheater when heating the wafer to a stabilization temperature. This stabilization temperature will be lower than the temperature at which thermal uniformity becomes very important. After reaching the stabilization temperature, the wafer is inserted into a higher temperature region of the device, such as heating chamber 18, and raised to the desired temperature in a substantially uniform manner. This method helps to improve the thermal uniformity of the wafer at the higher temperatures that are most important.

Secondly, another method is to use a preheat / pre-regulation chamber to realize on the wafer a desired temperature profile that compensates for the edge heating effect on the wafer. Such a system is configured to provide temperature dispersion to the wafer during heating. Dispersion of heating to the wafer can be varied such that the center of the wafer is at a temperature about 50 ° C. above the edge of the wafer. As a particular advantage, the temperature difference in the wafer is minimized at the most important temperature window of about 600 to 1100 ° C.

Preheat / pre-regulation chamber 180 is shown in FIG. 21. The chamber 180 includes one or more heating regions 182, which are preferably disposed symmetrically under the wafer. Each heating zone is independently temperature controlled so that it can be selectively heated to a different temperature from each other. Different temperature regions heat different portions of the wafer to different temperatures. Thermocouples can be used to achieve temperature feedback in each region.

Another embodiment of the invention is disclosed in FIGS. 22 and 23. For clarity, only the heating chamber is shown and some of the internal parts are not shown. As a particular advantage, in this embodiment, the shutter includes a shutter cavity 192 formed in a portion of the shutter. In particular, as shown in more detail in FIG. 23 (removed the top shutter for clarity), one or more internal shutters 190 include a large recess 191. The recess 191 is preferably semicircular so that the shutter cavity 192 is formed therein when the opposing shutters 190 are closed. Shutter cavity 192 has a size and diameter suitable for receiving wafer carrier 138. The shutter cavity allows the wafer carrier to be positioned inside the cavity and to properly preheat the wafer prior to being placed in the heating area 182 for processing.

This embodiment is particularly suitable for the annealing process. For example, during the annealing process, the temperature will reach about 900-1200 ° C., depending on the type of wafer being processed. The shutter cavity 192 provides a closed area that can be preheated before the wafer enters the heating area 182. This allows the center of the wafer to be heated before it is exposed to the complete annealing temperature, improving uniformity within the wafer at such high temperatures.

The recessed shutter 190 and shutter cavity may be configured to accommodate any of the various wafer carrier embodiments described above. Another embodiment of a wafer carrier is disclosed in FIGS. 24A-24C. In this embodiment, the edge action member 142 is part of a flat plate that extends beyond the edge of the wafer. Other pin 173 configurations may also be used. Compared to the fin 172, the fin 173 is larger and has a rounded surface that abuts the wafer. The wafer carrier of this embodiment provides a narrower profile than some other embodiments for positioning in the shutter cavity. However, it should be understood that any wafer carrier embodiment may be located within the shutter cavity 192.

Although the present invention has been described with reference to the above-described preferred embodiments and examples, it should be understood that these examples are intended to illustrate, not to limit, and those skilled in the art will readily practice variations and combinations. It will be appreciated that such modifications and combinations will be within the scope of the invention and the following claims.

Claims (57)

As the heat treatment device: A heating chamber having a heat source; A cooling chamber disposed adjacent said heating chamber and having a cooling source; A wafer holder moving between a cooling chamber and a heating chamber through a passage disposed between the heat source and the cooling source; One or more shutters may be moved between an open position through which the wafer holder can pass through the passage, and a blocking position that defines a passage smaller than the passage formed when in the open position, and which determines the size of the passage. Heat treatment apparatus comprising. 2. The apparatus of claim 1, wherein said heat source is a heating plate disposed adjacent a plurality of heating elements, said heating plate receiving heat from said heating element and re-radiating heat back into a heating chamber. 3. The apparatus of claim 2, wherein a processing tube forms a heating chamber and the heating plate is disposed outside the processing tube. 3. The apparatus of claim 2, wherein said heating chamber is formed by a processing tube comprising a heating plate. The heat treatment apparatus of claim 4, wherein a path from the heating plate to the wafer holder is not blocked. The apparatus of claim 1, wherein a processing tube forms a heating chamber, and an upper end of the processing tube includes a plurality of fluid ports for supplying fluid into the heating chamber. 7. The apparatus of claim 6 wherein the fluid ports are uniformly distributed over the closed top. 7. The apparatus of claim 6, wherein the fluid port is disposed such that fluid supplied from the fluid port is supplied onto the wafer above the wafer held by the wafer holder. 7. The apparatus of claim 6, wherein the first plurality of fluid ports are connected with the first fluid conduit, and the second plurality of fluid ports are connected with the second fluid conduit. The apparatus of claim 1, wherein the cooling source is disposed adjacent the bottom of the cooling chamber. The apparatus of claim 1, wherein the cooling source is located below the lowest position occupied by the wafer holder in the cooling chamber. The apparatus of claim 1, wherein the cooling source comprises a cooling fluid conduit or supplies cooling fluid into the cooling chamber. 2. The apparatus of claim 1, wherein said cooling source is a cooling plate, said cooling plate being a cooling plate having one or more conduits for conveying cooling fluid through the cooling plate. The apparatus of claim 1, wherein the cooling source is a cooling plate disposed adjacent one or more conduits for transporting cooling fluid. 2. The apparatus of claim 1, wherein the cooling source is a cooling plate comprising one or more openings, each opening slidingly receiving a shaft supporting the wafer holder. 2. The apparatus of claim 1, wherein said cooling source is a cooling plate disposed substantially concentrically with a wafer held by a wafer holder. 2. The apparatus of claim 1, wherein said cooling source is a cooling plate having a top surface with a surface area greater than the surface area of the bottom surface of a conventional wafer held by a wafer holder. The apparatus of claim 1, wherein the wafer holder holds the wafer such that the wafer can be disposed adjacent to a heat source. 2. The apparatus of claim 1, wherein no portion of the wafer holder extends above the wafer held by the wafer holder. The apparatus of claim 1, wherein the one or more shutters slide in a substantially horizontal plane. The apparatus of claim 1, wherein the one or more shutters are comprised of a thermal barrier material. The apparatus of claim 1, wherein the one or more shutters occupy a blocking position when the wafer holder is located in the heating chamber. 2. The shaft of claim 1, wherein a shaft supports the wafer holder, at least one of the one or more shutters having a side surface having a recess, the recess having a shape complementary to the cross-sectional contour of the shaft. Heat treatment device. 24. The apparatus of claim 23, wherein said at least one shutter moves to a blocking position where said shaft is received in at least one recess. The apparatus of claim 1, wherein at least one of the one or more shutters includes two or more members disposed such that at least a portion of the air gap is formed therebetween. 27. The apparatus of claim 25, wherein said at least two members are comprised of quartz or flat opaque quartz covered with a thermal insulator. The apparatus of claim 1, wherein the one or more shutters comprise two shutters disposed on either side of the passageway, the two shutters being movable toward and away from each other. The apparatus of claim 1, wherein at least one of the one or more shutters is slidably received within another one of the one or more shutters. The heat treatment apparatus of claim 1, wherein a first shutter selected from the one or more shutters is slid in a second shutter of the one or more shutters such that the first and second shutters form at least a portion of an air gap. . The apparatus of claim 1, wherein the one or more shutters may be in a blocking position to completely close the passage. The apparatus of claim 1, further comprising one or more fluid inlet ports arranged to supply fluid into the heating chamber. 32. The apparatus of claim 31 wherein the member extends into the heating chamber from a side of the heating chamber at a height lower than the height of the fluid inlet port. 32. The apparatus of claim 31 wherein the member extends into the heating chamber from a side of the heating chamber at a height higher than the height of the fluid inlet port. 2. The apparatus of claim 1 including a member extending from a side of said heating chamber into a heating chamber and connected to a heating plate. 35. The apparatus of claim 34, wherein said member supports a heating plate. 2. The apparatus of claim 1, wherein a member extends from a side of the heating chamber into the heating chamber, the member having an edge that is complementary in shape to the perimeter of the portion of the wafer being processed in the thermal processing apparatus. 37. The apparatus of claim 36, wherein the length of the edge is longer than the portion of the circumference that is complementary to the edge. 32. The apparatus of claim 31, further comprising a flow distribution chamber that distributes the flow of fluid from the one or more fluid inlet ports, wherein the fluid from the fluid inlet port passes through the flow distribution chamber and enters the heating chamber. A heat treatment apparatus in which a flow distribution chamber is disposed. 10. The system of claim 1, further comprising a flow distribution chamber for distributing flow of fluid from said at least one fluid inlet port, wherein fluid from said fluid inlet port passes through said flow distribution chamber and enters into a heating chamber. A heat treatment apparatus in which the flow distribution chamber is disposed. 2. The apparatus of claim 1, further comprising: a fluid discharge port for withdrawing fluid from said heating chamber; Further comprising a flow distribution chamber for distributing the flow of fluid from the heating chamber to the fluid discharge port, And the flow distribution chamber is arranged such that fluid from the heating chamber enters the fluid discharge port through the flow distribution chamber. 40. The apparatus of claim 39, wherein the flow distribution chamber comprises a flow distribution member positioned between a member extending from a side of the heating chamber into the heating chamber and a wall of the heating chamber. 40. The flow distribution chamber of claim 39, wherein the flow distribution chamber comprises a flow distribution member positioned between a first member extending from the side of the heating chamber into the heating chamber and a second member extending from the side of the heating chamber into the heating chamber. Heat treatment apparatus comprising. 2. The apparatus of claim 1, further comprising: one or more fluid inlet ports arranged to supply fluid into the heating chamber; Further comprising one or more fluid discharge ports arranged to return fluid to the heating ports, And the one or more fluid outlet ports are disposed such that fluid flowing from the one or more fluid inlet ports to the one or more fluid outlet ports flows across the heating chamber. As the heat treatment device: A heating chamber having a heat source; A cooling chamber disposed adjacent said heating chamber and having a cooling source; A wafer holder moving between a cooling chamber and a heating chamber through a passage disposed between the heat source and the cooling source; At least one shutter that can move between an open position through which the wafer holder can pass through the passage and a blocking position that defines a passage smaller than the passage formed when in the open position, the size of the passage being determined ; One or more fluid inlet ports arranged to supply fluid into the heating chamber; One or more fluid discharge ports arranged to withdraw fluid from the heating chamber; A flow distribution chamber arranged to pass when fluid from the fluid inlet port is distributed to a heating chamber and fluid from the heating chamber is distributed to a discharge port; And at least one flow detaining member extending from a side of the heating chamber into the heating chamber and having an edge of complementary shape around a portion of the wafer supported in the wafer holder. As a wafer heat treatment method: Positioning the wafer adjacent to a heat source; Heating the wafer by both radiation and conduction, Wherein the percentage of heat transferred to the wafer by conduction is about 30 to 90%. 46. The method of claim 45, wherein the percentage of heat transferred to the wafer by conduction is about 40 to 80%. 46. The method of claim 45, wherein the percentage of heat transferred to the wafer by conduction is about 50 to 70%. 46. The method of claim 45, comprising changing a proximity distance to a heat source of the wafer during the heating step of the wafer. 46. The method of claim 45, wherein the wafer is located within 30 mm of the heat source. 46. The method of claim 45, wherein the proximity distance varies between 2 mm and 0.2 mm. 49. The method of claim 48, wherein the proximity distance varies between 2 mm and 0.2 mm. 46. The method of claim 45, further comprising: feeding the wafer with fluid; And And rotating the wafer. 46. The wafer of claim 45, wherein the wafer is between 5 and 15 r.p.m. The wafer heat treatment method is rotated at a speed of. As a wafer holder for supporting a wafer in a heat treatment apparatus: A support member having a surface for supporting a wafer; An edge action member spaced apart from at least a portion of a circumferential edge of the wafer, The edge action member slows the rate of temperature rise of the peripheral edge of the wafer. The method of claim 1, wherein the cooling chamber is maintained at a pressure higher than the pressure in the heating chamber, And a purge gas flows from said cooling chamber to said heating chamber to provide restraint of process gas within said heating chamber. The apparatus of claim 1, further comprising a cooling station disposed adjacent the cooling chamber and thermally insulated from the cooling chamber. Further comprising a preheat / pre-regulation station thermally associated with the wafer with one or more heating zones located below the wafer, And wherein each heating zone is connected to an independent temperature controller so that each heating zone can be selectively heated to a different temperature from each other.