KR20020022235A - Method of forming Photo-resist pattern making of semiconductor - Google Patents

Method of forming Photo-resist pattern making of semiconductor Download PDF

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KR20020022235A
KR20020022235A KR1020000054935A KR20000054935A KR20020022235A KR 20020022235 A KR20020022235 A KR 20020022235A KR 1020000054935 A KR1020000054935 A KR 1020000054935A KR 20000054935 A KR20000054935 A KR 20000054935A KR 20020022235 A KR20020022235 A KR 20020022235A
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photoresist
pattern
coating
metal
forming
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KR1020000054935A
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Korean (ko)
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신헌주
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송재인
엘지이노텍 주식회사
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Priority to KR1020000054935A priority Critical patent/KR20020022235A/en
Publication of KR20020022235A publication Critical patent/KR20020022235A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: A method for preparing the pattern of a photoresist is provided, to form the supermicro photoresist pattern in the preparation of a surface seismic wave filter and a transistor. CONSTITUTION: The method comprises the steps of evaporation-depositing a metal(4) on the upper surface of a substrate(2) and coating a photoresist(6) on the metal; loading a mask(8) having a small interval on the photoresist(6) and irradiating light to the mask; developing the photoresist to remove the unnecessary part of the photoresist whose composition is changed partially by the exposure; evaporation-depositing Si3N4(10) on the photo resist(6) where a pattern(Q) is formed by the development; and dry-etching the photoresist to remove Si3N4(10) coated horizontally on the photoresist. Preferably the coating process by evaporation-deposition is carried out by using plasma enhanced chemical vapor deposition.

Description

포토레지스트 패턴 형성방법 { Method of forming Photo-resist pattern making of semiconductor }Method of forming photo-resist pattern making of semiconductor}

본 발명은 표면탄성파 필터 및 트랜지스터 등의 반도체 제조공정 중 포토레지스트 패턴을 형성하는 방법에 관한 것으로서, 보다 상세하게는 기존의 포토리소그래피 장비에 의해 형성할 수 있는 미세화 패턴의 한계를 극복하여 초미세 패턴을 형성할 수 있는 반도체의 포토레지스트 패턴 형성방법에 관한 것이다.The present invention relates to a method of forming a photoresist pattern during semiconductor manufacturing processes, such as surface acoustic wave filters and transistors, and more particularly, to overcome the limitation of the miniaturization pattern that can be formed by conventional photolithography equipment. It relates to a method of forming a photoresist pattern of a semiconductor capable of forming a.

도 1은 종래 기술에 따른 반도체의 포토레지스트 패턴 형성방법을 나타낸 공정 순서도이다.1 is a process flowchart showing a method of forming a photoresist pattern of a semiconductor according to the prior art.

종래의 포토리소그래피(photolithography) 장비를 이용하여 포토레지스트 패턴을 형성하는 방법은 다음과 같다.A method of forming a photoresist pattern using conventional photolithography equipment is as follows.

기판(102) 위에 메탈(104)을 일정 두께로 증착한 후 다시 포토레지스트(106)를 일정 두께로 코팅하는 코팅공정을 실시한다. 그 후 포토레지스트(106) 위에 미소 간격을 갖는 마스크(108)를 로딩시킨 뒤 빛을 조사하게 되면 포토레지스트(106)에 빛이 선택적으로 노출되어 포토레지스트(106) 중에서 빛이 노출되는 부분과 빛이 차단된 부분의 화학적 조성이 달라지게 되는 노광공정을 실시한다.After depositing the metal 104 on the substrate 102 to a predetermined thickness, a coating process of coating the photoresist 106 to a predetermined thickness is performed. Thereafter, when the mask 108 having a small gap is loaded on the photoresist 106 and then irradiated with light, light is selectively exposed to the photoresist 106 to expose the light and the portion of the photoresist 106 where the light is exposed. An exposure process is performed in which the chemical composition of the blocked portion is changed.

그리고, 서로 조성이 달라진 포토레지스트(106) 중에서 필요없는 부분을 제거하고 원하는 부분만 남도록 현상공정을 수행하게 된다.Then, the unnecessary process is removed from the photoresist 106 having different compositions, and the developing process is performed so that only the desired part remains.

상기 현상공정이 완료되면 에칭공정을 실시하여 최종적으로 포토레지스트 패턴을 형성한다.After the developing process is completed, an etching process is performed to finally form a photoresist pattern.

그러나, 상기한 바와 같은 종래 기술에 따른 포토레지스트 패턴 형성방법은 포토리소그래피 장비에 의해 미세화 패턴이 형성되는 데, 이와 같은 종래의 포토리소그래피 장비를 이용하여 포토레지스트 패턴을 형성하게 되면 패턴의 홀간격(P)이 0.18 ㎛ 정도에서 한계를 나타내기 때문에 0.18 ㎛ 이하의 초미세화 패턴을 형성하기에는 기술적으로 곤란하여 원하는 초미세화 패턴 형성이 불가능한 문제점이 있다.However, in the photoresist pattern forming method according to the prior art as described above, the miniaturization pattern is formed by the photolithography equipment. When the photoresist pattern is formed using the conventional photolithography equipment, the hole spacing of the pattern ( Since P) shows a limit at about 0.18 μm, it is technically difficult to form an ultrafine pattern of 0.18 μm or less, and thus there is a problem in that a desired ultrafine pattern cannot be formed.

본 발명은 상기한 문제점을 해결하기 위하여 창출된 것으로서, 본 발명의 목적은 기존의 포토리소그래피 장비를 사용하여 포토레지스트 패턴의 미세화할 수 있는 한계를 극복하여 원하는 정도의 초미세화 패턴을 형성할 수 있는 반도체의 포토레지스트 패턴 형성방법을 제공하는 데 있다.The present invention has been made to solve the above problems, and an object of the present invention is to overcome the limitation of miniaturization of a photoresist pattern using a conventional photolithography equipment, thereby forming an ultrafine pattern of a desired degree. There is provided a method of forming a photoresist pattern of a semiconductor.

도 1은 종래 기술에 따른 에칭공정을 나타낸 공정 순서도이고,1 is a process flowchart showing an etching process according to the prior art,

도 2는 본 발명에 따른 에칭공정을 나타낸 공정 순서도이다.2 is a process flowchart showing an etching process according to the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for main parts of the drawings>

2 : 기판 4 : 메탈2: substrate 4: metal

6 : 포토레지스트 10 : 질화규소6: photoresist 10: silicon nitride

상기한 과제를 실현하기 위한 본 발명에 따른 반도체의 포토레지스트 패턴 형성방법은 기판의 상면에 메탈을 일정 두께로 증착하고, 메탈의 상면에 포토레지스트를 일정 두께로 코팅하는 코팅공정과, 상기 코팅공정이 완료되면, 포토레지스트 위에 미소 간격을 갖는 마스크를 로딩시킨 뒤 빛을 조사하는 노광공정과, 상기 노광공정이 완료되면, 서로 조성이 달라진 포토레지스트 중에서 필요없는 부분을 제거하고 원하는 부분만 남도록 하여 포토레지스트 패턴을 형성하는 현상공정과, 상기 현상공정이 완료되면, 패턴이 형성된 포토레지스트 위에 질화규소(Si3N4)을 도포하는 도포공정과, 상기 도포공정이 완료되면, 건식 에칭장치를 이용하여 포토레지스트 위에 수평방향으로 도포된 질화규소(Si3N4)를 제거하는 에칭공정을 포함하여 이루어짐을 특징으로 한다.The method of forming a photoresist pattern of a semiconductor according to the present invention for realizing the above object is a coating process of depositing a metal on the upper surface of the substrate to a predetermined thickness, coating the photoresist on the upper surface of the metal to a predetermined thickness, and the coating process When this is completed, an exposure step of loading a mask with a small gap on the photoresist and then irradiating with light, and when the exposure step is completed, to remove unnecessary parts of the photoresist having a different composition and to leave only the desired part A developing step of forming a resist pattern, a coating step of coating silicon nitride (Si 3 N 4 ) on the patterned photoresist when the developing step is completed, and a dry etching apparatus using a dry etching apparatus. a horizontally applied on the silicon nitride yirueojim resist, including an etching process to remove the (Si 3 N 4) And a gong.

이하, 첨부된 도면을 참조하여 본 발명의 일실시예를 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

도 2는 본 발명에 따른 포토레지스트 패턴 형성방법을 나타낸 공정 순서도이다.2 is a process flowchart showing a method of forming a photoresist pattern according to the present invention.

포토레지스트 패턴 형성방법은 기판(2)의 상면에 메탈(4)을 일정 두께로 증착하고, 메탈(4)의 상면에 포토레지스트(6)를 일정 두께로 코팅하는 코팅공정을 실시한다.In the photoresist pattern forming method, the metal 4 is deposited on the upper surface of the substrate 2 to a predetermined thickness, and the photoresist 6 is coated on the upper surface of the metal 4 to a predetermined thickness.

그 후 포토레지스트(6) 위에 미소 간격을 갖는 마스크(8)를 로딩시킨 뒤 빛을 조사하는 노광공정을 실시한다. 즉, 마스크(8)에 빛을 조사하게 되면 마스크(8)에 형성된 패턴에 따라 포토레지스트(6)에 빛이 선택적으로 노출되어 포토레지스트(6) 중에서 빛이 노출되는 부분과 빛이 차단된 부분의 화학적 조성이 달라지게 된다.Thereafter, a mask 8 having a small gap is loaded on the photoresist 6 and then an exposure step of irradiating light is performed. That is, when light is irradiated to the mask 8, light is selectively exposed to the photoresist 6 according to a pattern formed in the mask 8, where the light is exposed and the part where the light is blocked. The chemical composition of will be different.

그리고, 서로 조성이 달라진 포토레지스트(6) 중에서 필요없는 부분을 제거하고 원하는 부분만 남도록 현상공정을 수행하게 된다.Then, the undesired portions of the photoresist 6 having different compositions are removed and the developing process is performed so that only the desired portions remain.

즉, 현상액을 포토레지스트(6)에 공급하게 되면 조성이 달라진 포토레지스트(6) 중에서 빛에 노출된 부분은 남아 있게 되고, 빛이 차단된 부분은 현상액에 의해 제거된다.That is, when the developer is supplied to the photoresist 6, the part exposed to light remains in the photoresist 6 having a different composition, and the part where the light is blocked is removed by the developer.

이와 같은 현상공정이 완료되면 포토레지스트 패턴은 최소 0.18㎛ 정도 형성된다. 여기에서 0.18㎛ 이하의 초미세화 패턴을 얻기 위해서는 다음과 같은 공정을 실시한다.When the development process is completed, the photoresist pattern is formed at least about 0.18㎛. In order to obtain the ultrafine pattern of 0.18 micrometer or less here, the following process is implemented.

상기에서와 같이 패턴이 형성된 포토레지스트(6) 위에 PECVD(Plasma Enhanced Chemical Vaper Deposition)를 이용하여 질화규소(Si3N4)(10)를 증착한다.As described above, silicon nitride (Si 3 N 4 ) 10 is deposited on the patterned photoresist 6 using plasma enhanced chemical vapor deposition (PECVD).

그런 다음, 건식 에칭장치를 이용하여 에칭공정을 실시하게 되면 포토레지스트 패턴을 약 0.1㎛ 이하로 형성할 수 있다.Then, when the etching process is performed using a dry etching apparatus, the photoresist pattern may be formed to about 0.1 μm or less.

즉, 에칭공정을 실시하게 되면, 패턴이 형성된 포토레지스트(6)에 증착된 질화규소(Si3N4)(10) 중 수평방향으로 증착된 부분은 제거된다. 즉, 질화규소(Si3N4)(10)가 패턴(Q) 사이의 수직방향으로 증착된 부분만 남게 된다. 이와 같이, 패턴(Q) 사이에 질화규소(Si3N4)가 일정 간격으로 존재하기 때문에 증착되는 질화규소(Si3N4)(10)의 두께를 조절하게 되면 최종적으로 포토레지스트의 패턴을 원하는 데로 조절할 수 있다.That is, when the etching process is performed, the horizontally deposited portion of the silicon nitride (Si 3 N 4 ) 10 deposited on the patterned photoresist 6 is removed. That is, only portions where silicon nitride (Si 3 N 4 ) 10 is deposited in the vertical direction between the patterns Q remain. As such, since silicon nitride (Si 3 N 4 ) is present at regular intervals between the patterns (Q), when the thickness of the deposited silicon nitride (Si 3 N 4 ) 10 is adjusted, a pattern of the photoresist is finally desired. I can regulate it.

따라서, 상기와 같이 구성되고 작용되는 본 발명에 따른 반도체의 포토레지스트 패턴 형성방법은 기존의 포토리소그래피 장비를 이용하여 노광공정을 실시한 후 다시 PECVD를 이용하여 질화규소(Si3N4)를 도포하고 난 다음 건식 에칭장치를 사용하여 에칭공정을 실시하게 되면 패턴과 패턴 사이에 질화규소가 일정두께로 존재하게 되어 포토레지스트 패턴을 원하는 데로 형성할 수 있는 이점이 있다.Therefore, the method for forming a photoresist pattern of a semiconductor according to the present invention, which is constructed and operated as described above, is performed by exposing silicon nitride (Si 3 N 4 ) using PECVD after performing an exposure process using a conventional photolithography equipment. When the etching process is performed using a dry etching apparatus, silicon nitride may be present at a predetermined thickness between the pattern and the pattern, thereby forming a photoresist pattern as desired.

Claims (2)

기판의 상면에 메탈을 일정 두께로 증착하고, 메탈의 상면에 포토레지스트를 일정 두께로 코팅하는 코팅공정과;A coating process of depositing a metal with a predetermined thickness on the upper surface of the substrate and coating a photoresist with a predetermined thickness on the upper surface of the metal; 상기 포토레지스트 위에 미소 간격을 갖는 마스크를 로딩시킨 뒤 빛을 조사하는 노광공정과;An exposure step of irradiating light after loading a mask having a small gap on the photoresist; 상기 노광공정으로 인하여 서로 조성이 달라진 포토레지스트 중에서 필요없는 부분을 제거하고 원하는 부분만 남도록 하여 소정의 패턴을 형성하는 현상공정과;A developing step of forming a predetermined pattern by removing unnecessary portions of the photoresist having different compositions due to the exposure process and leaving only desired portions; 상기 현상공정이 완료되면, 패턴이 형성된 포토레지스트 위에 질화규소(Si3N4)를 증착하는 도포공정과;A coating step of depositing silicon nitride (Si 3 N 4 ) on the patterned photoresist when the developing step is completed; 상기 도포공정이 완료되면, 건식 에칭장치를 이용하여 포토레지스트 위에 수평방향으로 도포된 질화규소(Si3N4)를 제거하는 에칭공정을 포함하는 포토레지스트 패턴 형성방법.Comprising an etching process for removing the silicon nitride (Si 3 N 4 ) applied in a horizontal direction on the photoresist using the dry etching apparatus, when the coating process is completed. 제 1 항에 있어서,The method of claim 1, 상기 도포공정은 PECVD(Plasma Enhanced Chemical Vaper Deposition)를 이용하여 실시되는 것을 특징으로 하는 포토레지스트 패턴 형성방법.The coating process is a photoresist pattern forming method characterized in that carried out using PECVD (Plasma Enhanced Chemical Vaper Deposition).
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102087913B1 (en) * 2019-04-01 2020-03-11 (주)이노시아 Method of forming solid pattern for lense cover

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102087913B1 (en) * 2019-04-01 2020-03-11 (주)이노시아 Method of forming solid pattern for lense cover

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