KR20020017853A - Image sensor having IR filter in chip - Google Patents
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- 150000004767 nitrides Chemical class 0.000 claims abstract description 17
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Abstract
Description
본 발명은 이미지 센서 제조 분야에 관한 것으로, 특히 칩 내부에 IR 필터를 구비하는 이미지 센서에 관한 것이다.TECHNICAL FIELD The present invention relates to the field of image sensor manufacturing, and more particularly, to an image sensor having an IR filter inside a chip.
이미지 센서(image sensor)는 1차원 또는 2차원 이상의 광학 정보를 전기신호로 변환하는 장치이다. 이미지 센서의 종류는 크게 나누어 촬상관과 고체 촬상 소자로 분류된다. 촬상관은 텔레비전을 중심으로 하여 화상처리기술을 구사한 계측, 제어, 인식 등에서 널리 상용되며 응용 기술이 발전되었다. 시판되는 고체의 이미지 센서는 MOS(metal-oxide-semiconductor)형과 CCD(charge coupled device)형의 2종류가 있다.An image sensor is an apparatus that converts optical information of one or two dimensions or more into an electrical signal. The types of image sensors are broadly classified into imaging tubes and solid-state imaging devices. Imaging tubes are widely used in measurement, control, and recognition using image processing technology centered on televisions, and applied technologies have been developed. There are two types of solid-state image sensors on the market: metal-oxide-semiconductor (MOS) type and charge coupled device (CCD) type.
CMOS 이미지 센서는 CMOS 제조 기술을 이용하여 광학적 이미지를 전기적신호로 변환시키는 소자로서, 픽셀수 만큼 MOS트랜지스터를 만들고 이것을 이용하여 차례차례 출력을 검출하는 스위칭 방식을 채용하고 있다. CMOS 이미지 센서는, 종래 이미지센서로 널리 사용되고 있는 CCD 이미지센서에 비하여 구동 방식이 간편하고 다양한 스캐닝 방식의 구현이 가능하며, 신호처리 회로를 단일칩에 집적할 수 있어 제품의 소형화가 가능할 뿐만 아니라, 호환성의 CMOS 기술을 사용하므로 제조 단가를 낮출 수 있고, 전력 소모 또한 크게 낮다는 장점을 지니고 있다.CMOS image sensor is a device that converts an optical image into an electrical signal using CMOS fabrication technology, and employs a switching method that makes MOS transistors as many as the number of pixels and uses them to sequentially detect the output. The CMOS image sensor is simpler to drive than the CCD image sensor, which is widely used as a conventional image sensor, and can realize various scanning methods, and can integrate a signal processing circuit into a single chip, thereby miniaturizing the product. The use of compatible CMOS technology reduces manufacturing costs and significantly lowers power consumption.
도 1은 4개의 트랜지스터와 2개의 캐패시턴스 구조로 이루어지는 CMOS 이미지센서의 단위 픽셀을 보이는 회로도로서, 광감지 수단인 포토다이오드(PD)와 4개의 NMOS트랜지스터로 구성되는 CMOS 이미지센서의 단위픽셀을 보이고 있다. 4개의 NMOS트랜지스터 중 트랜스퍼 트랜지스터(Tx)는 포토다이오드(PD)에서 생성된 광전하를 플로팅 확산영역으로 운송하는 역할을 하고, 리셋 트랜지스터(Rx)는 신호검출을 위해 상기 플로팅 확산영역에 저장되어 있는 전하를 배출하는 역할을 하고, 드라이브 트랜지스터(Dx)는 소스팔로워(Source Follower)로서 역할하며, 셀렉트 트랜지스터(Sx)는 스위칭(Switching) 및 어드레싱(Addressing)을 위한 것이다. 도면에서 "Cf"는 플로팅 확산영역이 갖는 캐패시턴스를, "Cp"는 포토다이오드가 갖는 캐패시턴스를 각각 나타낸다.FIG. 1 is a circuit diagram showing a unit pixel of a CMOS image sensor composed of four transistors and two capacitance structures, and a unit pixel of a CMOS image sensor composed of a photodiode (PD) as a light sensing means and four NMOS transistors. . Of the four NMOS transistors, the transfer transistor Tx serves to transport the photocharges generated by the photodiode PD to the floating diffusion region, and the reset transistor Rx is stored in the floating diffusion region for signal detection. It serves to discharge the charge, the drive transistor (Dx) serves as a source follower (Source Follower), the select transistor (Sx) is for switching (Switching) and addressing (Addressing). In the drawing, "Cf" represents capacitance of the floating diffusion region, and "Cp" represents capacitance of the photodiode, respectively.
이와 같이 구성된 이미지센서 단위픽셀에 대한 동작은 다음과 같이 이루어진다. 처음에는 리셋 트랜지스터(Rx), 트랜스퍼 트랜지스터(Tx) 및 셀렉트 트랜지스터(Sx)를 온(on)시켜 단위픽셀을 리셋시킨다. 이때 포토다이오드(PD)는 공핍되기 시작하여 캐패시턴스 Cp는 전하축적(carrier changing)이 발생하고, 플로팅 확산영역의 캐패시턴스 Cf는 공급전압 VDD 전압까지 전하축전된다. 그리고 트랜스퍼 트랜지스터(Tx)를 오프시키고 셀렉트 트랜지스터(Sx)를 온시킨 다음 리셋트랜지스터(Rx)를 오프시킨다. 이와 같은 동작 상태에서 단위픽셀 출력단(Out)으로부터 출력전압 V1을 읽어 버퍼에 저장시키고 난 후, 트랜스퍼 트랜지스터(Tx)를 온시켜 빛의 세기에 따라 변화된 캐패시턴스 Cp의 캐리어들을 캐패시턴스 Cf로 이동시킨 다음, 다시 출력단(Out)에서 출력전압 V2를 읽어들여 V1 - V2에 대한 아날로그 데이터를 디지털 데이터로 변경시키므로 단위픽셀에 대한 한 동작주기가 완료된다.Operation of the image sensor unit pixel configured as described above is performed as follows. Initially, the reset pixel Rx, the transfer transistor Tx, and the select transistor Sx are turned on to reset the unit pixel. At this time, the photodiode PD starts to deplete, and the capacitance Cp generates a carrier change, and the capacitance Cf of the floating diffusion region is charged up to the supply voltage VDD. The transfer transistor Tx is turned off, the select transistor Sx is turned on, and the reset transistor Rx is turned off. In this operation state, after reading the output voltage V1 from the unit pixel output terminal Out and storing it in the buffer, the transfer transistor Tx is turned on to move the carriers of the capacitance Cp changed according to the light intensity to the capacitance Cf. The output voltage V2 is read again from the output terminal, and the analog data for V1-V2 is converted into digital data, thereby completing one operation cycle for the unit pixel.
화상인식 소자로 사용되는 이미지 센서는 입사하는 빛을 손실없이 전자로 바꾸는 능력이 중요하다. 입사하는 빛을 전자로 바꾸어 주는 역할을 하는 소자가 포토다이오드인데, 통상 이미지 센서의 단위픽셀에는 도 1에 보이는 바와 같이 포토다이오드 뿐만 아니라 단위 픽셀 내부의 신호처리를 위한 회로가 복합적으로 구성되기 때문에 포토다이오드의 면적에 제한이 따르게 된다. 이를 극복하기 위하여 단위픽셀 상부에 마이크로렌즈를 형성하여 단위픽셀로 입사하는 빛 중에서 포토다이오드 영역 이외의 지역으로 입사하는 빛을 포토다이오드로 모아준다. 이와 같이 마이크로 렌즈를 형성하는 방법을 통하여 이미지 센서의 광집속도를 향상시킬 수 있다.An image sensor used as an image recognition device is important in its ability to convert incident light into electrons without loss. A device that converts incident light into electrons is a photodiode. As shown in FIG. 1, a photodiode as well as a photodiode and a circuit for signal processing inside a unit pixel are complex in a unit pixel of an image sensor. There is a limit on the area of the diode. In order to overcome this problem, a microlens is formed on the unit pixel to collect light incident to a region other than the photodiode region of the light incident on the unit pixel. As such, the light collecting speed of the image sensor may be improved by forming the microlens.
한편, 외부 렌즈는 수개의 렌즈와 적외선(Infrared, IR) 필터가 결합된 형태로 구성된다. 이와 같이 종래 이미지 센서는 칩 외부에 구현된 적외선 필터를 사용함에 따라 상대적으로 제조 단가가 상승하고, 외부 렌즈에 적외선 필터가 구비됨에 따라 외부 렌즈의 부피가 상대적으로 커지고 구성이 복잡해지는 단점이 있었다.On the other hand, the external lens is composed of a combination of several lenses and an infrared (IR) filter. As such, the conventional image sensor has a disadvantage in that the manufacturing cost is relatively increased by using an infrared filter implemented outside the chip, and the volume of the external lens is relatively large and the configuration is complicated as the infrared filter is provided in the external lens.
상기와 같은 문제점을 해결하기 위한 본 발명은 칩 내부에 적외선 필터를 구비하는 이미지 센서를 제공하는데 목적이 있다.An object of the present invention for solving the above problems is to provide an image sensor having an infrared filter inside the chip.
도 1은 종래 기술에 따른 CMOS 이미지 센서의 단위픽셀 구조를 개략적으로 보이는 단면도,1 is a cross-sectional view schematically showing a unit pixel structure of a conventional CMOS image sensor;
도 2는 본 발명의 실시예에 따라 적외선 필터를 칩 내부에 구비하는 이미지 센서의 구조를 개략적으로 보이는 단면도,2 is a cross-sectional view schematically showing a structure of an image sensor including an infrared filter in a chip according to an embodiment of the present invention;
도 3은 종래 칩 외부 렌즈에 구비된 적외선 필터와 본 발명에 따라 칩 내부에 구비된 적외선 필터의 투과율을 비교하여 보이는 그래프.Figure 3 is a graph showing a comparison between the transmittance of the infrared filter provided in the chip and the infrared filter provided in the conventional chip external lens.
*도면의 주요부분에 대한 도면 부호의 설명** Description of reference numerals for the main parts of the drawings *
22: IR 필터 22A: 저역통과 적외선 필터22: IR filter 22A: lowpass infrared filter
22B: 고역통과 적외선 필터 23: 칼라필터 어레이22B: High Pass Infrared Filter 23: Color Filter Array
24: 평탄화층 25: 마이크로 렌즈24: planarization layer 25: micro lens
상기와 같은 목적을 달성하기 위한 본 발명은, 광감지 수단을 포함한 하부구조 형성이 완료된 반도체 기판을 덮는 페시베이션층; 상기 페시베이션층 상에 번갈아 적층된 다수의 질화막 및 산화막으로 이루어지는 적외선 필터; 및 상기 적외선필터 상부에 형성된 집광수단을 포함하는 이미지 센서를 제공한다.The present invention for achieving the above object, the passivation layer covering the semiconductor substrate is completed, the lower structure formation including a light sensing means; An infrared filter comprising a plurality of nitride films and oxide films alternately stacked on the passivation layer; And it provides an image sensor comprising a light collecting means formed on the infrared filter.
또한 상기 목적을 달성하기 위한 본 발명은, 광감지 수단을 포함한 하부구조 형성이 완료된 반도체 기판을 덮는 페시베이션층; 상기 페시베이션층 상에 번갈아 적층된 다수의 질화막 및 산화막으로 이루어지는 적외선 필터; 상기 적외선 필터 상에 형성된 칼라 필터; 상기 칼라 필터 상에 형성된 평탄화층; 및 상기 평탄화층 상에 형성된 집광수단을 포함하는 이미지 센서를 제공한다.In addition, the present invention for achieving the above object, the passivation layer covering the semiconductor substrate is completed, the lower structure formation including a light sensing means; An infrared filter comprising a plurality of nitride films and oxide films alternately stacked on the passivation layer; A color filter formed on the infrared filter; A planarization layer formed on the color filter; And a light collecting means formed on the planarization layer.
상기 적외선 필터는, 번갈아 적층된 굴절률 2.3의 질화막 및 굴절률 1.43의 산화막으로 이루어진다.The infrared filter consists of a nitride film having a refractive index of 2.3 and an oxide film having a refractive index of 1.43, which are alternately stacked.
도 2는 본 발명의 실시예에 따른 이미지 센서의 개략적인 구조를 보이는 단면도로서, 포토다이오드(도시하지 않음) 등의 하부구조 형성이 완료된 반도체 기판(20)을 덮는 페시베이션층(passivation layer, 21), 상기 페시베이션층(21) 상에 번갈아 적층된 다수의 질화막 및 산화막으로 이루어지는 적외선 필터(22), 상기 적외선 필터(22) 상에 형성된 칼라 필터 어레이(color filter array, 23), 칼라 필터 어레이(23) 상에 형성된 평탄화층(24), 상기 평탄화층(24) 상에 집광을 위해 형성된 마이크로 렌즈(25)를 보이고 있다.2 is a cross-sectional view illustrating a schematic structure of an image sensor according to an exemplary embodiment of the present invention, wherein a passivation layer 21 covering a semiconductor substrate 20 on which a substructure such as a photodiode (not shown) is completed is illustrated. ), An infrared filter 22 composed of a plurality of nitride and oxide films alternately stacked on the passivation layer 21, a color filter array 23 formed on the infrared filter 22, and a color filter array. The planarization layer 24 formed on 23 and the microlens 25 formed for condensing on the planarization layer 24 are shown.
상기 적외선 필터(22)는 제1 질화막(N1) 및 제1 산화막(O1)으로 이루어지는 저역통과(low pass) 적외선 필터(22A)와 저역통과 적외선 필터(22A) 상에 번갈아 적층된 다수의 제2 질화막(N2) 및 제2 산화막(NO)으로 이루어지는 고역통과(high pass) 적외선 필터(22B)를 포함한다.The infrared filter 22 includes a plurality of second layers alternately stacked on the low pass infrared filter 22A and the low pass infrared filter 22A including the first nitride film N1 and the first oxide film O1. And a high pass infrared filter 22B comprising a nitride film N2 and a second oxide film NO.
저역통과 적외선 필터(22A)는 굴절률이 2.3인 770 Å 두께의 제1 질화막(N1)과 굴절율이 1.43인 1400 Å 두께의 제1 산화막(SiO2)이 번갈아 5번씩 적층되어 이루어진 것으로서 0.7 ㎛ 파장의 광을 모두 반사시킨다. 그리고, 고역통과 적외선 필터(22B)는 240 Å 두께의 제2 질화막(N2)과 430 Å 두께의 제2 산화막이 번갈아 5번씩 적층되어 이루어진 것으로서 0.3 ㎛ 파장의 광을 모두 반사시킨다.The low-pass infrared filter 22A is formed by alternately stacking a 770-nm-thick first nitride film N1 having a refractive index of 2.3 and a first oxide film (SiO 2 ) having a refractive index of 1.43 five times, alternately, having a wavelength of 0.7 μm. Reflect all the light. The high-pass infrared filter 22B is formed by alternately stacking a 240 nm thick second nitride film N2 and a 430 nm thick second oxide film five times, and reflects all 0.3 µm wavelength light.
도 3은 종래 칩 외부 렌즈에 구비된 적외선 필터(A)와 본 발명에 따라 칩 내부에 구비된 적외선 필터(B)의 투과율을 비교하여 보이는 그래프로서, 본 발명에 따라 칩 내부에 적외선 필터를 구비할 경우 비교적 양호한 적외선 광필터 특성을 얻을 수 있음으로 보이고 있다.3 is a graph showing a comparison of the transmittance of the infrared filter (A) provided in the conventional lens external chip and the infrared filter (B) provided in the chip according to the present invention, an infrared filter provided in the chip according to the present invention In this case, relatively good infrared light filter characteristics can be obtained.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made in the art without departing from the technical spirit of the present invention. It will be apparent to those of ordinary knowledge.
상기와 같이 이루어지는 본 발명은 이미지 센서 칩 내부에 적외선 필터를 구비함으로써 외부 렌즈 구성에서 적외선 필터를 제외시킴으로써 렌즈 구성을 단순화시키고 상대적으로 가격이 비싼 외부 적외선 필터를 대치할 수 있다. 본 발명은 CCD 또는 CMOS 이미지 센서 등에 적용할 수 있다.According to the present invention, the infrared filter is provided inside the image sensor chip, thereby excluding the infrared filter from the external lens configuration, thereby simplifying the lens configuration and replacing the relatively expensive external infrared filter. The present invention can be applied to a CCD or CMOS image sensor.
Claims (5)
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| KR1020000051368A KR20020017853A (en) | 2000-08-31 | 2000-08-31 | Image sensor having IR filter in chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100968471B1 (en) * | 2008-04-10 | 2010-07-07 | 주식회사 에이디텍 | Optical sensor for visible light using silicon wafer and manufacturing method of semiconductor integrated circuit thereof |
| US8581964B2 (en) | 2009-11-04 | 2013-11-12 | Samsung Electronics Co., Ltd. | Three-dimensional image sensors and methods of manufacturing the same |
| KR20160123000A (en) * | 2015-04-15 | 2016-10-25 | (주)실리콘화일 | CMOS Image sensor, manufacturing the method thereof, and camera module having the same |
| KR20220058385A (en) * | 2020-10-30 | 2022-05-09 | 삼성전자주식회사 | Image sensor including color separating lens array and electronic apparatus including the image sensor |
-
2000
- 2000-08-31 KR KR1020000051368A patent/KR20020017853A/en not_active Application Discontinuation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100968471B1 (en) * | 2008-04-10 | 2010-07-07 | 주식회사 에이디텍 | Optical sensor for visible light using silicon wafer and manufacturing method of semiconductor integrated circuit thereof |
| US8581964B2 (en) | 2009-11-04 | 2013-11-12 | Samsung Electronics Co., Ltd. | Three-dimensional image sensors and methods of manufacturing the same |
| KR20160123000A (en) * | 2015-04-15 | 2016-10-25 | (주)실리콘화일 | CMOS Image sensor, manufacturing the method thereof, and camera module having the same |
| KR20220058385A (en) * | 2020-10-30 | 2022-05-09 | 삼성전자주식회사 | Image sensor including color separating lens array and electronic apparatus including the image sensor |
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