KR200184788Y1 - Developer - Google Patents
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- KR200184788Y1 KR200184788Y1 KR2019970029762U KR19970029762U KR200184788Y1 KR 200184788 Y1 KR200184788 Y1 KR 200184788Y1 KR 2019970029762 U KR2019970029762 U KR 2019970029762U KR 19970029762 U KR19970029762 U KR 19970029762U KR 200184788 Y1 KR200184788 Y1 KR 200184788Y1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
- G03F7/3057—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the processing units other than the developing unit, e.g. washing units
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
본 고안은 웨이퍼 제조공정에서 사용하는 장비중 하나인 웨이퍼 현상장치에 관한 것으로 현상용액을 분사하는 분사노즐과, 상기 분사노즐을 지지하고 있는 분사노즐 지지부와, 상기 분사노즐에 현상용액을 공급하는 현상용액공급관과, 상기 현상용액공급관에 현상용액의 공급을 조정하는 현상용액공급조정밸브와, 상기 분사노즐의 하부에 위치하여 웨이퍼가 올려지는 웨이퍼척을 가지며,또한 상기 분사노즐하부에 현상작업후 남은 현상용액을 흡입하는 흡입구가 위치하고 상기 흡입된 현상용액을 배출하는 배기구가 직접 하수관으로 연결되는 현상용액수거관과, 상기 현상용액수거관의 배기구쪽과 약 135°의 각도를 가지고 연결되어 가스를 공급하는 가스 공급관과, 상기 가스 공급관에 공급되는 가스의 양을 가스압조정밸브를 포함하여 현상용액수거용기가 없어 교체하는 번거러움이 없고 회수되는 현상용액으로 인한 가스조정밸브의 부식과 현상용액수거관의 막힘을 방지할 수 있는 잇다.The present invention relates to a wafer developing apparatus, which is one of the equipments used in the wafer manufacturing process, comprising: a spray nozzle for spraying a developing solution, a spray nozzle support portion for supporting the spray nozzle, and a supply of a developing solution to the spray nozzle; A solution supply pipe, a developing solution supply control valve for adjusting supply of a developing solution to the developing solution supply pipe, and a wafer chuck positioned below the injection nozzle to raise a wafer; A developing solution collecting pipe in which a suction port for sucking a developing solution is located, and an exhaust port for discharging the developing solution is directly connected to a sewer pipe, is connected to an exhaust port side of the developing solution collecting pipe at an angle of about 135 ° to supply gas. The amount of gas supplied to the gas supply pipe and a gas pressure regulating valve; There is no huge container, there is no hassle to replace, and it can prevent corrosion of gas control valve and blockage of developing solution collection pipe due to recovered developing solution.
Description
본 고안은 웨이퍼 현상장치에 관한 것으로서, 특히, 웨이퍼 현상공정후 분사노즐에 남아 있는 현상용액이 공정중인 웨이퍼 위에 낙하하여 발생하는 불량을 방지할 수 있는 웨이퍼 현상장치에 관한 것이다.The present invention relates to a wafer developing apparatus, and more particularly, to a wafer developing apparatus capable of preventing a defect caused by falling of a developing solution remaining in a spray nozzle after a wafer developing process onto a wafer in process.
도 1은 종래의 웨이퍼 현상장치의 구조도이다.1 is a structural diagram of a conventional wafer developing apparatus.
종래의 웨이퍼 현상장치는 현상용액(F)을 분사하는 분사노즐(2)과, 상기 분사노즐(2)을 지지하고 있는 분사노즐 지지부(1)와, 상기 분사노즐(2)에 현상용액(F)을 공급하는 현상용액공급관(3)과, 상기 현상용액공급관(3)에 현상용액(F)의 공급을 조정하는 현상용액공급조정밸브(4)와, 현상작업후 상기 분사노즐(2)에 남아있는 현상용액을 흡입하는 흡입구(5-1)가 위치하고 상기 흡입된 현상용액을 배출하는 배기구(5-2)가 중력방향으로 형성된 현상용액수거관(5)과 상기 현상용액수거관(5)의 배기구(5-2) 상부에 직각으로 형성되어 공기를 흡입하는 진공흡입관(6)과, 상기 진공흡입관(6)의 공기흡입을 조절하는 공기압조정밸브(7)와 상기 현상용액수거관(5)의 배기구(5-2) 하부에 위치하여 상기 흡입된 현상용액을 모아두는 현상용액수거용기(8)와 상기 분사노즐(2)의 하부에 위치하여 웨이퍼(19)가 올려지는 웨이퍼척(18)으로 구성된다.The conventional wafer developing apparatus includes a spray nozzle 2 for spraying the developing solution F, a spray nozzle support portion 1 for supporting the spray nozzle 2, and a developing solution F in the spray nozzle 2; ), A developing solution supply pipe (3) for supplying the developer solution, a developing solution supply adjusting valve (4) for adjusting the supply of the developing solution (F) to the developing solution supply pipe (3), and the injection nozzle (2) after the developing operation. A developing solution collecting pipe 5 and a developing solution collecting pipe 5 having a suction port 5-1 for sucking the remaining developing solution and an exhaust port 5-2 for discharging the developing solution in a gravity direction. A vacuum suction pipe (6) formed at right angles on the exhaust port (5-2) of the suction port to suck air, an air pressure regulating valve (7) for adjusting the air suction of the vacuum suction pipe (6), and the developing solution collecting pipe (5); And a lower part of the developing solution collecting container 8 and the injection nozzle 2, which are located under the exhaust port 5-2 of Location consists of a wafer chuck 18 that the wafer 19 is put on.
상기 종래의 웨이퍼 현상장치는 다음과 같이 동작한다.The conventional wafer developing apparatus operates as follows.
상기 웨이퍼척(19)위에 웨이퍼(19)가 올려진다. 이후 현상용액공급조정밸브(4)가 열려 현상용액(F)이 현상용액공급관(3)을 통하여 분사노즐(2)에 공급된다. 상기 분사노즐(2)은 현상용액(F)을 상기 웨이퍼(19)위에 분사한다. 이후 현상용액공급조정밸브(4)가 닫히면 분사노즐(2)은 현상용액(F)의 분사를 중지한다. 그러면 분사노즐(2)에는 잔량의 현상용액(F)이 남게 된다.The wafer 19 is placed on the wafer chuck 19. Thereafter, the developing solution supply adjusting valve 4 is opened, and the developing solution F is supplied to the injection nozzle 2 through the developing solution supply pipe 3. The spray nozzle 2 sprays the developing solution F onto the wafer 19. Thereafter, when the developing solution supply adjustment valve 4 is closed, the injection nozzle 2 stops the injection of the developing solution F. Then, the remaining amount of developing solution F remains in the injection nozzle 2.
이후에 상기 공기압조정밸브(7)가 열리면 현상용액수거관(5)의 공기를 흡입하여 진공상태를 만들면 상기 남은 현상용액(F)은 현상용액수거관(5)의 흡입구(5-1)를 통하여 흡입된후 중력에 의하여 배기구(5-2)를 통하여 현상용액수거용기(8)에 모이게 된다.Thereafter, when the air pressure regulating valve 7 is opened, the air in the developing solution collecting pipe 5 is sucked to create a vacuum state, and the remaining developing solution F opens the inlet 5-1 of the developing solution collecting pipe 5. After being sucked through, it collects in the developing solution collection container 8 through the exhaust port 5-2 by gravity.
그러나 종래의 웨이퍼 현상장치는 진공에 의하여 잔여 현상용액이 회수된다. 이때 그 진공의 농도가 강하면 현상용액이 진공흡입관으로 흡입되어 공기압조정밸브가 부식이 되며, 그 진공의 농도가 약하면 현상용액이 현상용액수거관에 남게되어 상기 현상용액수거관이 막히며 현상용액수거용기는 모여진 잔여 현상용액을 비우기 위하여 자주 교체하여야 하는 문제점을 가진다.However, in the conventional wafer developing apparatus, the remaining developing solution is recovered by vacuum. At this time, if the concentration of the vacuum is strong, the developing solution is sucked into the vacuum suction tube, and the air pressure regulating valve is corroded. If the concentration of the vacuum is weak, the developing solution remains in the developing solution collecting pipe, which blocks the developing solution collecting pipe and collects the developing solution. The container has a problem that must be frequently replaced to empty the collected residual developer solution.
따라서 본 고안은 상기 문제점을 해결하기 위하여 안출된 것으로 공기압조정밸브의 부식과, 현상용액수거관의 막힘과, 현상용액수거용기를 교체할 필요가 없는 웨이퍼 현상장치를 제공함에 있다.Therefore, the present invention has been made to solve the above problems to provide a wafer developing apparatus that does not need to corrode the air pressure regulating valve, blockage of the developing solution collection pipe, and replace the developing solution collection container.
상기 목적을 달성하기 위한 본 고안에 따른 웨이퍼 현상장치는 현상용액을 분사하는 분사노즐과, 상기 분사노즐을 지지하고 있는 분사노즐 지지부와, 상기 분사노즐에 현상용액을 공급하는 현상용액공급관과, 상기 현상용액공급관에 현상용액의 공급을 조정하는 현상용액공급조정밸브와, 상기 분사노즐의 하부에 위치하여 웨이퍼가 올려지는 웨이퍼척을 가지며, 상기 분사노즐하부에 현상작업후 남은 현상용액을 흡입하는 흡입구가 위치하고 상기 흡입된 현상용액을 배출하는 배기구가 직접 하수관으로 연결되는 현상용액수거관과, 상기 현상용액수거관의 배기구 상부에 연결되어 가스를 공급하는 가스 공급관과 상기 가스 공급관에 공급되는 가스의 양을 가스압조정밸브를 포함한다.A wafer developing apparatus according to the present invention for achieving the above object is an injection nozzle for injecting a developing solution, an injection nozzle support unit for supporting the injection nozzle, a developing solution supply pipe for supplying a developing solution to the injection nozzle, A developing solution supply control valve for adjusting the supply of the developing solution to the developing solution supply pipe, and a wafer chuck positioned below the injection nozzle to lift the wafer, and a suction port for sucking the remaining developing solution after the development work under the injection nozzle. And a developing solution collecting pipe in which an exhaust port for discharging the developed developer solution is directly connected to a sewer pipe, a gas supply pipe connected to an upper portion of an exhaust port of the developing solution collection pipe, and supplying gas, and an amount of gas supplied to the gas supply pipe. It includes a gas pressure regulating valve.
도 1은 종래의 웨이퍼 현상장치의 구조도1 is a structural diagram of a conventional wafer developing apparatus
도 2는 본 고안에 따른 웨이퍼 현상장치의 구조도2 is a structural diagram of a wafer developing apparatus according to the present invention
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1, 11 분사노즐 지지부 2, 12 분사노즐1, 11 injection nozzle support 2, 12 injection nozzle
3, 13 현상액공급관 4, 14 현상액공급조정밸브3, 13 Developer supply pipe 4, 14 Developer supply control valve
5, 15 현상용액수거관 6 진공흡입관5, 15 Developing solution collection pipe 6 Vacuum suction pipe
16 가스 공급관 7, 17 가스압조정밸브16 Gas Supply Line 7, 17 Gas Pressure Adjustment Valve
8 현상용액수거용기 18 웨이퍼 척8 Developing solution container 18 Wafer chuck
19 웨이퍼 5-1, 15-1 흡입구19 Wafer 5-1, 15-1 Inlet
5-2, 15-2 배기구5-2, 15-2 exhaust vent
이하 첨부한 도면을 참고하여 본 고안에 따른 웨이퍼 현상장치를 상세히 설명한다.Hereinafter, a wafer developing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 고안에 따른 웨이퍼 현상장치의 구조도이다.2 is a structural diagram of a wafer developing apparatus according to the present invention.
본 고안에 따른 웨이퍼 현상장치는 현상용액을 분사하는 분사노즐(12)과, 상기 분사노즐(12)을 지지하고 있는 분사노즐 지지부(11)와, 상기 분사노즐(12)에 현상용액을 공급하는 현상용액공급관(13)과, 상기 현상용액공급관(13)에 현상용액의 공급을 조정하는 현상용액공급조정밸브(4)와, 상기 분사노즐(12)의 하부에 위치하여 웨이퍼(19)가 올려지는 웨이퍼척(18)과, 상기 분사노즐(12) 하부에 현상작업후 남은 현상용액을 흡입하는 흡입구(15-1)가 위치하고 상기 흡입된 현상용액을 배출하는 배기구(15-2)가 직접 하수관으로 연결되는 현상용액수거관(15)과 상기 현상용액수거관(15)의 배기구(15-2)쪽과 약 135°의 각도를 가지고 연결되어 가스를 공급하는 가스 공급관(16)과 상기 가스 공급관(16)에 공급되는 가스의 양을 가스압조정밸브(17)를 포함한다.The wafer developing apparatus according to the present invention provides a spray nozzle 12 for spraying a developing solution, a spray nozzle support portion 11 for supporting the spray nozzle 12, and a developer for supplying a developing solution to the spray nozzle 12. The developing solution supply pipe 13, the developing solution supply adjusting valve 4 for adjusting the supply of the developing solution to the developing solution supply pipe 13, and the wafer 19 are placed under the injection nozzle 12. The suction chuck 18 and the suction nozzle 15-1, which sucks the developing solution remaining after the developing operation, are located under the injection nozzle 12, and the exhaust port 15-2, which discharges the sucked developing solution, is directly connected to the sewer pipe. A gas supply pipe 16 and a gas supply pipe connected to the developing solution collecting pipe 15 and an exhaust port 15-2 of the developing solution collecting pipe 15 at an angle of about 135 ° to supply gas; The amount of gas supplied to the 16 includes a gas pressure regulating valve 17.
상기 가스 공급관(16)에 공급되는 가스는 일반적인 대기나 또는 불활성가스인 질소를 사용한다.The gas supplied to the gas supply pipe 16 uses nitrogen which is a general atmosphere or an inert gas.
상기 본 고안에 따른 웨이퍼 현상장치는 다음과 같이 동작한다.The wafer developing apparatus according to the present invention operates as follows.
상기 웨이퍼척(19)위에 웨이퍼(19)가 올려진다. 이후 현상용액공급조정밸브(14)가 열려 현상용액(F)이 현상용액공급관(13)을 통하여 분사노즐(12)에 공급된다. 상기 분사노즐(12)은 현상용액(F)을 상기 웨이퍼(19)위에 분사한다. 이후 현상용액공급조정밸브(14)가 닫히면 분사노즐(12)은 현상용액(F)의 분사를 중지한다. 그러면 분사노즐(12)에는 잔량의 현상용액(F)이 남게 된다.The wafer 19 is placed on the wafer chuck 19. Thereafter, the developing solution supply adjusting valve 14 is opened, and the developing solution F is supplied to the injection nozzle 12 through the developing solution supply pipe 13. The injection nozzle 12 injects the developing solution F onto the wafer 19. Then, when the developing solution supply adjustment valve 14 is closed, the injection nozzle 12 stops the injection of the developing solution (F). Then, the remaining amount of the developing solution F remains in the injection nozzle 12.
이후에 상기 가스압조정밸브(17)가 열리면 상기 가스 공급관(16)으로 대기 또는 질소가스가 공급된다. 상기 공급된 가스는 현상용액수거관(15)의 공기를 배기구(15-2)쪽으로 밀어내 진공상태를 만든다. 상기 남은 현상용액(F)은 현상용액수거관(15)의 흡입구(15-1)를 통하여 흡입된후 상기 공급된 가스의 흐름에 따라 배기구(5-2)를 통하여 직접 하스관으로 배출된다.Thereafter, when the gas pressure regulating valve 17 is opened, atmospheric or nitrogen gas is supplied to the gas supply pipe 16. The supplied gas pushes the air of the developing solution collecting pipe 15 toward the exhaust port 15-2 to create a vacuum state. The remaining developing solution F is sucked through the inlet port 15-1 of the developing solution collecting pipe 15, and then discharged directly through the exhaust port 5-2 to the Haas pipe in accordance with the flow of the supplied gas.
따라서 본 고안의 웨이퍼 현상장치는 현상용액수거용기가 없어 교체하는 번거러움이 없고 회수되는 현상용액으로 인한 가스조정밸브의 부식과 현상용액수거관의 막힘을 방지할 수 있는 잇점을 가진다.Therefore, the wafer developing apparatus of the present invention has the advantage that there is no developing solution collection container, there is no need to replace, and the corrosion of the gas adjusting valve and the clogging of the developing solution collection pipe due to the recovered developing solution.
Claims (2)
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| KR2019970029762U KR200184788Y1 (en) | 1997-10-27 | 1997-10-27 | Developer |
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