KR200172887Y1 - The furnace for semiconductor fabrication - Google Patents

The furnace for semiconductor fabrication Download PDF

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Publication number
KR200172887Y1
KR200172887Y1 KR2019970028093U KR19970028093U KR200172887Y1 KR 200172887 Y1 KR200172887 Y1 KR 200172887Y1 KR 2019970028093 U KR2019970028093 U KR 2019970028093U KR 19970028093 U KR19970028093 U KR 19970028093U KR 200172887 Y1 KR200172887 Y1 KR 200172887Y1
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thermocouple
reactor
tube
semiconductor
temperature
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KR2019970028093U
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Korean (ko)
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KR19990014926U (en
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윤지현
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

본 고안은 반응로내의 튜브가 과열되지 않도록 온도를 제어하는 다 수개의 열전대를 설치할 때 각각의 열전대가 튜브와 일정한 간격을 유지하며 설치되도록 하는 반도체 제조용 반응로에 관한 것으로 종래의 반응로내에 열전대를 설치하는 과정에서 튜브와 열전대간의 이격거리가 작업자의 감각만으로 판단되어 열전대마다 설치되는 위치가 달라지고 이에 따라 각 열전대에 의하여 튜브내의 위치별 온도에 차이가 발생하며 이러한 온도를 기준으로 작업되는 웨이퍼의 공정막 두께가 균일하게 형성되지 못하는 것은 물론 열전대가 너무 멀리 떨어져 설치되었을 때는 히터가 과열되어 공정이 중단되는 문제점이 있었던바 본 고안은 튜브내의 온도가 측정되는 각 부위에 대응되도록 위치선정된 다 수개의 열전대를 하나의 브라켓에 형성하여 일체화하므로써 한 번에 열전대를 설치가능케 함은 물론 튜브와 열전대가 이루는 이격거리를 항상 동일하게 유지할 수 있도록 하는 잇점이 있는 반도체 제조용 반응로이다.The present invention relates to a reactor for manufacturing a semiconductor in which each thermocouple is installed at a constant distance from the tube when installing a plurality of thermocouples to control the temperature in the reactor so that the tubes in the reactor do not overheat. In the process of installation, the distance between the tube and the thermocouple is judged only by the operator's sense, so the location of each thermocouple is changed, and accordingly, a difference occurs in the temperature of each position in the tube by each thermocouple. The process film thickness was not formed uniformly, and when the thermocouple was installed too far away, there was a problem in that the heater was overheated and the process was interrupted. The present invention is positioned to correspond to each part where the temperature in the tube is measured. Thermocouples are formed in one bracket and integrated It allows installing a thermocouple in the write once, also, as well as a semiconductor for making a reaction with the advantage that the tube and the forming distance thermocouple to always be equally maintained.

Description

반도체 제조용 반응로Reactor for Semiconductor Manufacturing

본 고안은 반도체 제조용 반응로에 관한 것으로 더욱 상세하게는 반응로내의 튜브가 과열되지 않도록 온도를 제어하는 다 수개의 열전대(thermocouple)를 설치할 때 각각의 열전대가 튜브와 일정한 간격을 유지하며 설치되도록 하는 반도체 제조용 반응로에 관한 것이다.The present invention relates to a reactor for manufacturing a semiconductor, and more particularly, to install a plurality of thermocouples that control temperature so that the tubes in the reactor do not overheat, so that each thermocouple is installed at a constant distance from the tube. It relates to a reactor for manufacturing a semiconductor.

일반적으로 반도체를 제조하기 위해서는 반도체의 원재료인 웨이퍼에 산화, 확산 그리고 증착 등의 여러공정이 수행되어야 하며 이러한 공정은 대개 주변환경과 격리된 반응로에서 이루어진다.In general, in order to manufacture a semiconductor, various processes such as oxidation, diffusion, and deposition are performed on a wafer, which is a raw material of the semiconductor, and this process is usually performed in a reactor isolated from the surrounding environment.

종래에는 도 1에서 도시된 바와같이 웨이퍼가 가공되는 반도체 제조용 반응로(1)에 있어서, 상기 반응로(1)의 내부에 형성되는 튜브(3)와, 상기 튜브(3)의 내측에 형성되어 웨이퍼를 장착하는 보우트(5)와, 상기 반응로(1)의 외벽과 튜브(3)의 사이에 임의간격으로 이격되며 적어도 하나이상 형성되어 튜브 (3)내의 온도를 조절하는 히터(7)와, 상기 튜브(3)와 일정간격을 유지하며 설치되어 과열감지 및 온도를 제어하는 열전대(9)와, 상기 튜브(3)내의 반응기체를 외부로 배출하는 덕트(11)로 구성된다. 이때 상기 열전대(9)는 삽입홈(13)이 형성된 연결단자(15)에 삽입되어 상호 고정된다.Conventionally, in a semiconductor manufacturing reactor 1 in which a wafer is processed as shown in FIG. 1, a tube 3 formed inside the reactor 1 and an inside of the tube 3 are formed. At least one or more heaters 7 which are spaced at random intervals between the outer wall of the reactor 1 and the tube 3 and at least one formed thereon to control the temperature in the tube 3; The thermocouple 9 is installed to maintain a predetermined interval with the tube 3 to control overheating detection and temperature, and a duct 11 for discharging the reactor body in the tube 3 to the outside. At this time, the thermocouple 9 is inserted into the connection terminal 15 having the insertion groove 13 is fixed to each other.

이러한 반응로(1)에서의 웨이퍼 가공과정을 설명하면, 웨이퍼를 튜브(3)의 내부에 형성된 보우트(5)에 장착한 후 튜브(3) 내부에 반응가스를 유입하고, 히터(7)를 작동시켜 각 공정에 적합한 온도를 유지하면서 웨이퍼와 반응가스를 상호 작용시키므써 공정이 수행된다. 이와같이 반응로(1)내에서 웨이퍼에 대한 가공공정이 진행된 후 덕트(11)를 통하여 반응가스를 외부로 방출하므로써 웨이퍼 가공작업이 완료된다.Referring to the wafer processing in the reactor 1, the wafer is mounted on the boat 5 formed inside the tube 3, the reaction gas is introduced into the tube 3, and the heater 7 is The process is performed by interacting the wafer and the reactant gas while operating to maintain the temperature appropriate for each process. In this way, the wafer processing operation is completed by discharging the reaction gas to the outside through the duct 11 after the processing process for the wafer in the reactor (1).

이때 상기 튜브(3) 내의 온도는 튜브(3)와 일정간격으로 이격되어 설치된 열전대(9)에 의하여 감지되어 적절한 온도를 유지하도록 히터(7)를 제어한다.At this time, the temperature in the tube 3 is sensed by the thermocouple 9 installed spaced apart from the tube 3 at a predetermined interval to control the heater 7 to maintain the appropriate temperature.

상기 반응로(1)내에 설치된 히터(7)는 튜브(3)내의 각 부위에 대한 온도를 결정짓는 주요인이 되며, 이러한 히터(7)에 의하여 가열된 튜브(3)의 과열을 감지하고 제어하는 열전대(9)가 각 부위에 설치되어야 한다. 이때 각 부위의 튜브(3)에 열전대(9)를 설치하는 작업은, 일단 열전대(9)를 연결단자(15)의 삽입홈(13)에 끼워 튜브(3)와 열전대(9)가 상호 접촉되는 위치까지 삽입한 후 작업자의 감각으로 약 2 ~ 3 mm 정도 열전대(9)를 빼내므로써 튜브(3)와 이격되도록하여 수행된다.The heater 7 installed in the reactor 1 becomes a main factor in determining the temperature of each part in the tube 3, and detects and controls overheating of the tube 3 heated by the heater 7. Thermocouples 9 should be installed at each site. At this time, the operation of installing the thermocouple 9 to the tube 3 of each part, the tube 3 and the thermocouple 9 is in contact with each other by inserting the thermocouple 9 into the insertion groove 13 of the connection terminal 15 once. After insertion to the position to be carried out by removing the thermocouple (9) about 2 to 3 mm by the operator's sense to be spaced apart from the tube (3).

그러나 종래의 반응로내에 열전대를 설치하는 과정에서 튜브와 열전대간의 이격거리가 작업자의 감각만으로 판단되어 열전대마다 설치되는 위치가 달라지고 이에 따라 각 열전대에 의하여 튜브내의 위치별 온도에 차이가 발생하며 이러한 온도를 기준으로 작업되는 웨이퍼의 공정막 두께가 균일하게 형성되지 못하는 것은 물론 열전대가 너무 멀리 떨어져 설치되었을 때는 히터가 과열되어 공정이 중단되는 문제점이 있다.However, in the process of installing a thermocouple in a conventional reactor, the separation distance between the tube and the thermocouple is determined only by the operator's sense, and thus the positions of the thermocouples are changed. The process film thickness of the wafer working on the basis of temperature is not formed uniformly, and when the thermocouple is installed too far, there is a problem in that the heater is overheated and the process is stopped.

본 고안의 목적은 튜브내의 온도가 측정되는 각 부위에 대응되도록 위치선정된 다 수개의 열전대를 하나의 브라켓에 형성하여 일체화하므로써 한 번에 열전대를 설치가능케 함은 물론 튜브와 열전대가 이루는 이격거리를 항상 동일하게 유지할 수 있도록 하는 반도체 제조용 반응로를 제공하는 데 있다.The purpose of the present invention is to form and integrate a number of thermocouples in one bracket that are positioned so as to correspond to each part where the temperature in the tube is measured. It is to provide a reactor for manufacturing a semiconductor that can be kept the same at all times.

따라서, 본 고안은 상기의 목적을 달성하고자, 반응로의 내부에 형성되는 튜브와, 상기 반응로와 튜브의 사이에 적어도 하나이상 형성되어 튜브 내의 온도를 조절하는 히터와, 상기 튜브내의 반응기체를 외부로 배출하는 덕트로 구성되는 반도체 제조용 반응로에 있어서, 적어도 하나이상의 열전대가 동일한 방향 및 길이로 돌출되며 형성되어 소정간격을 이루며 배치되는 열전대 브라켓이 튜브 외측과 일정한 간격으로 이격되어 설치된다.Therefore, the present invention, to achieve the above object, a tube formed inside the reactor, at least one heater formed between the reactor and the tube to control the temperature in the tube, and the reactor body in the tube In the reactor for manufacturing a semiconductor composed of a duct discharged to the outside, at least one thermocouple is formed to protrude in the same direction and length, the thermocouple brackets are formed at a predetermined interval spaced apart from the outside of the tube at regular intervals.

도 1은 종래의 반도체 제조용 반응로를 개략적으로 도시한 구성도이고,1 is a configuration diagram schematically showing a conventional reactor for manufacturing semiconductors,

도 2a는 본 고안의 열전대 브라켓을 반응로에 장착하기 전을 도시한 상태도이고, 도 2b는 본 고안의 열전대 브라켓을 반응로에 장착한 후를 도시한 상태도이다.Figure 2a is a state diagram showing before mounting the thermocouple bracket of the present invention to the reactor, Figure 2b is a state diagram showing after mounting the thermocouple bracket of the present invention to the reactor.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1 : 반응로, 3 : 튜브,1: reactor, 3: tube,

5 : 보우트, 7 : 히터,5: boat, 7: heater,

9 , 101 : 열전대, 11 : 덕트,9, 101: thermocouple, 11: duct,

13 : 삽입홈, 15 : 연결단자,13: insertion groove, 15: connecting terminal,

100 : 열전대 브라켓, 103 : 절연홈,100: thermocouple bracket, 103: insulating groove,

105 : 돌기, 107 : 단자부,105: projection, 107: terminal portion,

109 : 외부 제어단자, 111 , 113 : 나사홀,109: external control terminal, 111, 113: screw hole,

115 : 나사.115: screw.

이하, 첨부된 도면을 참조하여 본 고안을 설명하면 다음과 같다.Hereinafter, the present invention with reference to the accompanying drawings as follows.

도 2a와 2b는 본 고안의 열전대 브라켓을 반응로에 장착하기 전과 후를 도시한 상태도이다.Figure 2a and 2b is a state diagram showing before and after mounting the thermocouple bracket of the present invention to the reactor.

웨이퍼가 가공되는 반응로(1)의 외벽과 튜브(3) 사이에 다 수개의 히터(7)가 형성되는 한편 온도를 제어하기 위한 적어도 하나이상의 열전대(101)가 동일한 방향 및 길이로 돌출되고 각각의 열전대(101)는 임의간격을 유지하며 열전대 브라켓(100)에 형성된다. 따라서 하나의 열전대 브라켓(100)에 다 수개의 열전대(101)가 일체로 형성된다.A plurality of heaters 7 are formed between the outer wall of the reactor 1 and the tube 3 on which the wafer is processed, while at least one thermocouple 101 for controlling the temperature protrudes in the same direction and length, respectively. The thermocouple 101 is formed on the thermocouple bracket 100 to maintain a random interval. Therefore, several thermocouples 101 are integrally formed in one thermocouple bracket 100.

상기 열전대 브라켓(100)의 일측단은 절연처리된 절연홈(103)을 형성하여 반응로(1)의 내부 일측면에 형성된 돌기(105)와 상호 체결하고 타측단에는 각각의 열전대(101)를 외부 제어단자(109)와 연결하는 단자부(107)가 형성된다.One end of the thermocouple bracket 100 forms an insulation groove 103 insulated to mutually fasten with the protrusion 105 formed on one side of the reactor 1, and the other end of each thermocouple 101. The terminal unit 107 is formed to connect with the external control terminal 109.

이러한 단자부(107)에는 반응로(1)의 외벽일측과 체결되어 열전대 브라켓(100)을 고정하는 나사홀(111)이 형성된다.The terminal portion 107 is fastened to one side of the outer wall of the reactor 1 is formed with a screw hole 111 for fixing the thermocouple bracket 100.

따라서 상기 열전대 브라켓(100)은 반응로(1)의 외벽과 튜브(3) 사이에 삽입되어 일측단의 절연홈(103)이 돌기(105)와 체결되고 타측단의 단자부(107)에 형성된 나사홀(111)과 반응로(1)의 외벽에 형성된 나사홀(113)에 나사(115)가 삽입되어 상호 고정된다.Accordingly, the thermocouple bracket 100 is inserted between the outer wall of the reactor 1 and the tube 3 so that the insulating groove 103 at one end is fastened to the protrusion 105 and formed at the terminal portion 107 at the other end. The screw 115 is inserted into the hole 111 and the screw hole 113 formed on the outer wall of the reactor 1 to be fixed to each other.

이렇게 반응로(1)내에 설치된 열전대 브라켓(100)의 각 열전대(101)는 하나의 열전대가 튜브(3)와 동일한 간격을 유지하면 나머지 열전대로 동일한 간격을 유지하며 설치된다.In this way, each thermocouple 101 of the thermocouple bracket 100 installed in the reactor 1 is installed while maintaining the same interval with the remaining thermocouple if one thermocouple maintains the same interval as the tube (3).

본 고안에 의한 열전대의 설치과정을 알아보면 다음과 같다.The installation process of the thermocouple according to the present invention is as follows.

도면을 참조하면, 반도체 제조용 반응로(1)의 외벽과 튜브(3) 사이에 열전대(101)를 설치하기 위해서는 다 수개의 열전대(101)가 일체로 형성된 열전대 브라켓(100)을 반응로(1)의 외벽과 튜브(3) 사이의 공간에 삽입한다.Referring to the drawings, in order to install the thermocouple 101 between the outer wall of the reactor 1 for semiconductor manufacturing and the tube 3, a thermocouple bracket 100 in which a plurality of thermocouples 101 are integrally formed is a reactor (1). Insert into the space between the outer wall of the and the tube (3).

이때 상기 열전대 브라켓(100)은 일측단에 형성된 절연홈(103)이 외벽의 내부면에서 돌출된 돌기(105)와 상호 체결되는 한편 타측단의 단자부(107)는 반응로(1)의 외벽과 나사(115)로 체결되어 고정된다.In this case, the thermocouple bracket 100 is insulated with the protrusion 105 protruding from the inner surface of the outer wall of the insulating groove 103 formed at one end, while the terminal portion 107 of the other end and the outer wall of the reactor (1) It is fastened and fixed by screws 115.

이렇게 열전대 브라켓(100)이 반응로(1)내에 고정되면 열전대 브라켓(100)에 임의간격으로 배치되며 다 수개 형성되고 동일한 방향 및 길이만큼 돌출된 각각의 열전대(101)는 튜브(3)와 동일한 간격을 유지하며 이격되어 설치된다.When the thermocouple bracket 100 is fixed in the reactor 1, the thermocouple brackets 100 are arranged at random intervals and are formed in a plurality, and each of the thermocouples 101 protruding by the same direction and length is the same as the tube 3. It is installed spaced apart at intervals.

한편 상기 열전대 브라켓(100)의 단자부(107)에는 외부 제어단자(109)가 삽입되어 각 열전대(101)와 연결된다.On the other hand, an external control terminal 109 is inserted into the terminal portion 107 of the thermocouple bracket 100 and connected to each thermocouple 101.

따라서 다 수개의 열전대(101)가 일체화된 열전대 브라켓(100)을 반응로(1)내에 삽입하므로써 한 번의 작업으로 튜브(3)와 열전대(101)의 이격거리를 동일하게 유지한다.Therefore, by inserting the thermocouple bracket 100 integrated with a plurality of thermocouples 101 into the reactor 1, the separation distance between the tube 3 and the thermocouple 101 is kept the same in one operation.

상기에서 상술된 바와 같이, 본 고안은 튜브내의 온도가 측정되는 각 부위에 대응되도록 위치선정된 다 수개의 열전대를 하나의 브라켓에 형성하여 일체화하여 한 번의 작업으로 다 수개의 열전대를 설치하므로써 작업을 단순화하는 잇점이 있다.As described above, the present invention forms a plurality of thermocouples positioned in one bracket so as to correspond to each part where the temperature in the tube is measured and integrates them by installing several thermocouples in one operation. There is an advantage to simplify.

또한 각각의 열전대가 튜브와 이격되는 거리가 항상 동일하게 되어 튜브내의 온도가 균일하게 유지되며 이에따라 웨이퍼의 공정막 두께가 일정하게 형성되는 잇점이 있다.In addition, the distance between each thermocouple and the tube is always the same, so that the temperature in the tube is kept uniform, and thus the process film thickness of the wafer is uniformly formed.

Claims (3)

반응로(1)의 내부에 형성되는 튜브(3)와, 상기 반응로(1)와 튜브(3)의 사이에 적어도 하나이상 형성되어 튜브(3) 내의 온도를 조절하는 히터(7)와, 상기 튜브(3)내의 반응기체를 외부로 배출하는 덕트(11)로 구성되는 반도체 제조용 반응로에 있어서,A tube (3) formed inside the reactor (1), at least one heater (7) formed between the reactor (1) and the tube (3) to regulate the temperature in the tube (3), In the reactor for manufacturing a semiconductor consisting of a duct 11 for discharging the reactor body in the tube (3) to the outside, 적어도 하나이상의 열전대(101)가 동일한 방향 및 길이로 돌출되며 형성되어 소정간격을 이루며 배치되는 열전대 브라켓(100)이 튜브(3) 외측과 일정간격으로 이격되어 설치되는 것을 특징으로 하는 반도체 제조용 반응로.At least one thermocouple 101 protrudes in the same direction and length, the thermocouple bracket 100 is formed to form a predetermined interval is a semiconductor manufacturing reactor, characterized in that spaced apart from the tube 3 by a predetermined interval . 청구항 1에 있어서, 상기 열전대 브라켓(100)은,The method according to claim 1, The thermocouple bracket 100, 일단에 절연홈(103)이 형성되어 반응로(1) 상부내측면에서 돌출된 돌기(105)와 상호 결합되고 타단에는 각각의 열전대(101)를 외부 제어단자(109)와 연결하는 단자부(107)가 형성되는 것을 특징으로 하는 반도체 제조용 반응로.An insulating groove 103 is formed at one end thereof and is mutually coupled with the protrusion 105 protruding from the upper inner surface of the reactor 1, and at the other end thereof, a terminal portion 107 for connecting each thermocouple 101 to an external control terminal 109. ) Is formed, the reactor for manufacturing a semiconductor. 청구항 2에 있어서,The method according to claim 2, 상기 단자부(107)에는 나사(115)가 삽입되는 나사홀(113)이 형성되어 열전대 브라켓(100)을 반응로(1)의 일측면과 상호 체결하는 것을 특징으로 하는 반도체 제조용 반응로.The terminal portion 107 is formed with a screw hole 113 is inserted into the screw 115 is a reactor for manufacturing a semiconductor, characterized in that the mutual coupling of the thermocouple bracket 100 with one side of the reactor (1).
KR2019970028093U 1997-10-10 1997-10-10 The furnace for semiconductor fabrication KR200172887Y1 (en)

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