KR200169679Y1 - Cooling wall chemical reaction apparatus - Google Patents
Cooling wall chemical reaction apparatus Download PDFInfo
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- KR200169679Y1 KR200169679Y1 KR2019940014532U KR19940014532U KR200169679Y1 KR 200169679 Y1 KR200169679 Y1 KR 200169679Y1 KR 2019940014532 U KR2019940014532 U KR 2019940014532U KR 19940014532 U KR19940014532 U KR 19940014532U KR 200169679 Y1 KR200169679 Y1 KR 200169679Y1
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- distributor
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- cooling wall
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 고안은 냉각벽 화학반응장치에 관한 것으로, 종래에는 분배기(4)의 형상이 전면부가 평면인 형상으로 형성되어 있어 인입된 반응가스가 분배기(4)의 전면에서 정체되기 쉽고, 이에 따라 반응가스와 척(2)에서의 전달열에 의한 반응물이 분배기(4)에 생성됨으로써, 척(2)으로 흘러가는 반응가스량이 감소되어 공정이 불안정해지게 되고, 또한, 분배기(4)의 전면에 반응물이 쌓이게 되어 냉각수의 열전달을 점차적으로 막게 됨으로써 증착막이 성장되며, 이러한 증착막이 두꺼워져 떨어지게 되면 이물이 발생되는 원인으로 작용되는 문제점이 있었는 바, 분배기(4')는 타원형으로 형성하고, 분배기(4')를 가능한 척(2)으로부터 먼 위치에 이격설치하여 분배기(4')를 통과하는 반응가스의 흐름이 원활해지고, 척(2)으로부터의 발생되는 열의 영향이 감소되어 분배기에서 생성되는 반응물이 감소되어 이물의 발생을 최대한 억제하도록 한 것이다.The present invention relates to a cooling wall chemical reaction device, and in the related art, the shape of the distributor 4 is formed in the shape of the front surface is flat, so that the incoming reaction gas is easily stagnated at the front of the distributor 4, and thus the reaction gas. As the reactants generated by the transfer heat from the chuck 2 are generated in the distributor 4, the amount of reactant gas flowing to the chuck 2 is reduced, thereby making the process unstable, and the reactant in front of the distributor 4. The deposition film is grown by gradually blocking the heat transfer of the cooling water, and when the deposition film becomes thick and falls, there is a problem that causes foreign matters to be generated. The distributor 4 'is formed in an elliptical shape and the distributor 4' is formed. ) Is spaced apart from the chuck 2 as far as possible to facilitate the flow of the reaction gas through the distributor 4 'and the effect of the heat generated from the chuck 2 is reduced. It is reduced to a reaction generated by the group to minimize the generation of foreign matter.
Description
제1도는 종래 냉각벽 화학반응장치의 단면도.1 is a cross-sectional view of a conventional cooling wall chemical reactor.
제2도의 (a)(b)(c)는 종래 냉각벽 화학반응장치의 분배기의 정면도, 측면도 및 사시도.(A), (b) and (c) of FIG. 2 are front, side and perspective views of a distributor of a conventional cooling wall chemical reactor.
제3도는 본 고안에 의한 냉각벽 화학반응장치의 단면도.3 is a cross-sectional view of a cooling wall chemical reactor according to the present invention.
제4도의 (a)(b)(c)는 본 고안에 의한 냉각벽 화학반응장치의 분배기의 정면도, 측면도 및 사시도.(A), (b) and (c) of FIG. 4 are front, side and perspective views of a distributor of the cooling wall chemical reactor according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 반응챔버 2 : 척(CHUCK)1: reaction chamber 2: CHUCK
3 : 반응가스인입구 4' : 분배기(DIFFUSER)3: reaction gas inlet 4 ': distributor (DIFFUSER)
본 고안은 냉각벽 화학반응장치에 관한 것으로, 특히 분배기를 통과하여 척쪽으로 유입되는 반응가스의 흐름을 원활하게 하여 분배기에 증착되는 반응물의 양을 감소시킴과 아울러, 척으로부터의 열전달을 작게 하여 반응물의 생성을 감소시킴으로써, 반응물의 생성으로 인한 이물질의 발생을 억제하도록 한 냉각벽 화학반응장치에 관한 것이다.The present invention relates to a cooling wall chemical reaction device, and in particular, to smooth the flow of the reaction gas flowing through the distributor into the chuck to reduce the amount of reactant deposited on the distributor, and to reduce the heat transfer from the chuck. It is directed to a cooling wall chemical reaction device which reduces the production of, thereby suppressing the generation of foreign substances due to the production of reactants.
종래의 냉각벽 화학반응장치는 제1도에 도시한 바와 같이, 반응챔버(1) 내에 웨이퍼를 올려 놓을 수 있는 척(2)이 설치되어 있고, 반응챔버(1)의 선단부에 형성된 가스인입구(3)측에는 인입되는 가스를 혼합시켜 주기 위한 가스분배기(4)가 설치되어 있다.In the conventional cooling wall chemical reaction apparatus, as shown in FIG. 1, a chuck 2 for placing a wafer in the reaction chamber 1 is provided, and a gas inlet formed at the front end of the reaction chamber 1 ( On the 3) side, a gas distributor 4 is provided for mixing incoming gas.
이와같이 구성되어 있는 냉각벽 화학반응장치는 반응가스가 가스인입구(3)측으로 유입되어 먼저 분배기(4)에 1차로 부딪히면서 혼합되고, 혼합된 반응가스는 반응챔버(1)내에 설치된 척(2)쪽으로 흘러가서 척(2)위에 올려져 있는 웨이퍼와 부딪혀 웨이퍼 위에 반응막을 형성하게 되는 것으로, 이처럼 가스인입구(3)측에 분배기(4)가 설치되어 반응가스가 웨이퍼에 균일하게 영향을 주도록 함으로써 웨이퍼에 형성되는 반응막의 두께를 균일하게 하고 있는 것이다.In the cooling wall chemical reaction device configured as described above, the reaction gas is introduced into the gas inlet (3) and firstly mixed with the distributor (4), and the mixed reaction gas is directed toward the chuck (2) installed in the reaction chamber (1). It flows and collides with the wafer placed on the chuck 2 to form a reaction film on the wafer. Thus, a distributor 4 is installed on the gas inlet 3 side so that the reaction gas affects the wafer uniformly. The thickness of the reaction film formed is made uniform.
한편, 척(2)쪽으로부터 발생되는 고온으로 인해 가스분배기(4) 및 챔버(1)벽에 막이 증착되는 것을 방지하기 위해 상기 가스분배기(4) 및 챔버(1)벽에는 냉각수(cooling water)가 흐르도록 하고 있다.On the other hand, in order to prevent the film from being deposited on the wall of the gas distributor 4 and the chamber 1 due to the high temperature generated from the chuck 2 side, cooling water is provided on the wall of the gas distributor 4 and the chamber 1. Is flowing.
도면 중 미설명 부호 1a, 1b는 각각 냉각수 입, 출구이고, 4a,4b는 각각 분배기 냉각용 냉각수 입, 출구를 나타낸 것이다.In the drawings, reference numerals 1a and 1b denote coolant inlets and outlets, respectively, and 4a and 4b respectively denote coolant inlets and outlets for distributor cooling.
그런데, 상기한 바와 같은 냉각벽 화학반응장치는 분배기(4)의 형상이 제2도에 도시한 바와 같이 전면부가 평면인 형상으로 형성되어 있어 인입된 반응가스가 분배기(4)의 전면에서 정체되기 쉽고, 이에 따라 반응가스와 척(2)에서의 전달열에 의한 반응물이 분배기(4)에 생성됨으로써, 척(2)으로 흘러가는 반응가스량이 감소되어 공정이 불안정해지게 되고, 또한, 분배기(4)의 전면에 반응물이 쌓이게 되어 냉각수의 열전달을 점차적으로 막게 됨으로써 증착막이 성장되며, 이러한 증착막이 두꺼워져 떨어지게 되면 이물이 발생되는 원인으로 작용되는 문제점이 있었다.However, the cooling wall chemical reaction device as described above is formed in a shape in which the front face is flat as shown in FIG. 2 so that the introduced reaction gas is stagnated at the front of the dispenser 4. As a result, reactants generated by the reaction gas and the transfer heat from the chuck 2 are generated in the distributor 4, so that the amount of reaction gas flowing into the chuck 2 is reduced, thereby making the process unstable and the distributor 4. The reactant is accumulated on the front surface of the) to gradually prevent the heat transfer of the coolant, and thus the deposition film is grown, and when the deposition film becomes thick and falls, there is a problem in that foreign substances are generated.
상기한 바와 같은 문제점을 해소하기 위해 안출한 본 고안의 목적은 분배기를 통과하여 척쪽으로 유입되는 반응가스의 흐름을 원활하게 하여 분배기에 증착되는 반응물의 양을 감소시킴과 아울러, 척으로부터의 열전달을 작게 하여 반응물의 생성을 감소시킴으로써, 반응물의 생성으로 인한 이물질의 발생을 억제하려는 데 있다.An object of the present invention devised to solve the above problems is to reduce the amount of reactants deposited on the distributor by smoothly flowing the reaction gas flowing into the chuck through the distributor, and also to transfer heat from the chuck. In order to reduce the production of the reactants by making it small, it is to suppress the generation of foreign substances due to the production of the reactants.
이러한 본 고안의 목적을 달성하기 위하여, 반응 챔버, 그 챔버의 내벽을 이루는 냉각벽, 반응가스 유입구 및 인입되는 반응가스를 혼합하는 가스분배기를 포함하여 구성된 냉각벽 화학반응장치에 있어서, 상기 가스분배기가 타원형으로 형성된 것을 특징으로 하는 냉각벽 화학반응장치가 제공된다.In order to achieve the object of the present invention, in the cooling wall chemical reaction apparatus comprising a gas distributor for mixing the reaction chamber, the cooling wall forming the inner wall of the chamber, the reaction gas inlet and the incoming reaction gas, the gas distributor Cooling wall chemical reaction apparatus is characterized in that formed in the oval shape.
이하, 상기한 바와 같은 본 고안을 첨부도면에 도시한 일실시례에 의거하여 보다 상세히 설명한다.Hereinafter, the present invention as described above will be described in more detail on the basis of one embodiment shown in the accompanying drawings.
첨부한 도면 제3도는 본 고안에 의한 냉각벽 화학반응장치의 단면도이고, 제4도의 (a)(b)(c)는 본 고안에 의한 냉각벽 화학반응장치의 분배기의 정면도, 측면도 및 사시도로서, 이에 도시한 바와 같이, 본 고안 냉각벽 화학반응장치는 반응챔버(1)의 반응가스 인입구(3)에 설치되는 분배기(4')를 타원형으로 형성하여 반응가스의 흐름이 원활하게 이루어지도록 구성한 것이다.3 is a cross-sectional view of a cooling wall chemical reactor according to the present invention, and FIG. 4 (a) (b) (c) is a front view, a side view, and a perspective view of a distributor of the cooling wall chemical reaction device according to the present invention. As shown in the drawing, the present invention cooling-wall chemical reaction device forms an elliptical distributor 4 'installed in the reaction gas inlet 3 of the reaction chamber 1 so as to smoothly flow the reaction gas. It is made up.
특히 상기 분배기(4')는 척(2)으로부터 열전달 영향을 최소화시키기 위해 가능한 척(2)에서부터 먼 위치에 이격설치되어 있다.In particular, the distributor 4 'is spaced apart from the chuck 2 as far as possible in order to minimize the heat transfer effect from the chuck 2.
이와같이 구성되어 있는 본 고안에 의한 냉각벽 화학반응장치는 분배기(4')의 형상이 타원형이기 때문에 분배기(4')를 통과하는 반응가스의 흐름이 분배기(4')의 전면부에서 정체되지 않고 원활하게 이루어지게 되어 분배기(4')에 증착되는 반응물을 줄일 수 있게 된다.The cooling wall chemical reactor according to the present invention, which is configured as described above, has an elliptical shape of the distributor 4 ', so that the flow of the reaction gas passing through the distributor 4' is not stagnated at the front of the distributor 4 '. This can be done smoothly to reduce the reactants deposited on the distributor (4 ').
또한, 분배기(4')를 척(2)으로부터 최대한으로 이격설치함으로써, 척(2)으로부터의 열전달량이 감소되어 분배기(4')에서 발생되는 반응물의 생성을 최대한 억제하게 되며, 반응물의 생성이 억제되어 이물의 발생이 감소되는 것이다.In addition, by installing the distributor 4 'as far as possible from the chuck 2, the amount of heat transfer from the chuck 2 is reduced to suppress the generation of the reactants generated in the distributor 4' as much as possible, It is suppressed to reduce the generation of foreign matter.
한편, 상기 분배기(4')의 형상이 타원형으로 형성됨으로써 전체 분배기(4')의 체적이 증대되고, 체적의 증대량만큼 냉각수의 유량이 증대되어 냉각효과도 향상되는 효과가 발생된다.On the other hand, since the shape of the distributor 4 'is formed in an elliptical shape, the volume of the entire distributor 4' is increased, and the flow rate of the cooling water is increased by the increase amount of the volume, thereby improving the cooling effect.
미설명 부호 4'a, 4'b는 각각 분배기 냉각용 냉각수 입, 출구를 나타낸 것이다.Reference numerals 4'a and 4'b denote the inlet and outlet of the coolant for cooling the distributor, respectively.
이상에서 설명한 바와 같이, 본 고안에 의한 냉각벽 화학반응장치는 장치의 반응챔버로 유입되는 반응가스인입구에 설치되는 분배기의 형상을 타원형으로 하여 가스의 흐름이 원홀해지도록 함으로써 분배기에 증착되는 반응물의 양을 감소시키는 것이며, 이와 아울러 분배기의 위치를 척으로부터 가능한 먼 곳에 설치하여 척으로 인한 열의 영향을 줄여 반응물의 생성을 감소시킴으로써 반응물의 생성으로 인한 이물의 발생을 최대한 억제하는 효과가 있다.As described above, the cooling wall chemical reaction apparatus according to the present invention has an elliptical shape of a distributor installed at the reaction gas inlet flowing into the reaction chamber of the apparatus, so that the flow of gas is reduced, thereby allowing the reactant to be deposited in the distributor. In addition, it is possible to reduce the amount of the foreign matter due to the production of the reactants by reducing the amount of reactants by reducing the effect of heat due to the chuck by installing the position of the distributor as far as possible from the chuck.
또한, 분배기를 타원형으로 형성함으로써 전체 분배기의 체적이 증대되어 냉각수의 유량도 증대되어 분배기의 냉각효과가 향상되는 효과도 있는 것이다.In addition, by forming the distributor in an elliptical shape, the volume of the entire distributor is increased, so that the flow rate of the cooling water is also increased, thereby improving the cooling effect of the distributor.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940014532U KR200169679Y1 (en) | 1994-06-21 | 1994-06-21 | Cooling wall chemical reaction apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940014532U KR200169679Y1 (en) | 1994-06-21 | 1994-06-21 | Cooling wall chemical reaction apparatus |
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| Publication Number | Publication Date |
|---|---|
| KR960003060U KR960003060U (en) | 1996-01-22 |
| KR200169679Y1 true KR200169679Y1 (en) | 2000-02-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940014532U KR200169679Y1 (en) | 1994-06-21 | 1994-06-21 | Cooling wall chemical reaction apparatus |
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|---|---|
| KR (1) | KR200169679Y1 (en) |
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1994
- 1994-06-21 KR KR2019940014532U patent/KR200169679Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960003060U (en) | 1996-01-22 |
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