KR200167117Y1 - 가스용기의 봉인장치 - Google Patents

가스용기의 봉인장치 Download PDF

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Publication number
KR200167117Y1
KR200167117Y1 KR2019990017862U KR19990017862U KR200167117Y1 KR 200167117 Y1 KR200167117 Y1 KR 200167117Y1 KR 2019990017862 U KR2019990017862 U KR 2019990017862U KR 19990017862 U KR19990017862 U KR 19990017862U KR 200167117 Y1 KR200167117 Y1 KR 200167117Y1
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KR
South Korea
Prior art keywords
valve
gas container
cap
inlet
outlet
Prior art date
Application number
KR2019990017862U
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English (en)
Inventor
이상모
Original Assignee
이상모
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이상모 filed Critical 이상모
Priority to KR2019990017862U priority Critical patent/KR200167117Y1/ko
Priority to US09/468,123 priority patent/US6180473B1/en
Application granted granted Critical
Publication of KR200167117Y1 publication Critical patent/KR200167117Y1/ko

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C13/00—Details of vessels or of the filling or discharging of vessels
    • F17C13/08—Mounting arrangements for vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/82345—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)

Abstract

본 고안은 가스용기의 봉인장치에 관한 것으로, 더욱 상세하게는 가정이나 업소에 배달되는 LPG 용기의 밸브에 가스의 충전을 확인하는 캡을 일체로 부착하여 충전소나 배달업소에서 가스의 충전여부를 손쉽게 확인할 수 있도록 함을 목적으로 고안한 가스용기의 봉인장치에 관한 것이다.
본 고안에 따르면, 가스용기의 상면에 부착된 밸브의 입출구를 봉인함에 있어서, 입출구 내면의 나사와의 나사결합으로 입출구를 개폐하는 캡을 연결끈으로 밸브에 연결 설치하여서 됨을 특징으로 하는 가스용기의 봉인장치가 제공된다.

Description

가스용기의 봉인장치{Sealing apparatus of gas container}
본 고안은 가스용기의 봉인장치에 관한 것으로, 더욱 상세하게는 가정이나 업소에 배달되는 LPG 용기의 밸브에 가스의 충전을 확인하는 캡을 일체로 부착하여 충전소나 배달업소에서 가스의 충전여부를 손쉽게 확인할 수 있도록 함을 목적으로 고안한 가스용기의 봉인장치에 관한 것이다.
일반적으로 충전소에서 가스를 충전시킨 가스용기는 배달업소에 의해 가정이나 업소에 배달되는 데 배달업소에서는 충전된 가스의 밸브에 충전사실을 확인할 수 있는 봉인지를 접착하여 밸브의 입출구를 봉인하고 있다.
그러나 수많은 가스용기에 봉인지를 일일히 접착하는 작업이 매우 번거럽고 불편하여 배달업소에서 사용을 기피하는 경향이 많았고 또한 가스용기가 배달된 업소에서 봉인지를 일일히 뜯어내는 작업이 불편할 뿐 아니라 봉인지의 제작비용도 만만찮게 소요되는 등 비경제적인 단점이 있었다.
본 고안의 목적은 밸브의 봉인을 종래와 같은 봉인지에 의존하지 않고 밸브에 입출구를 편리하게 개폐할 수 캡을 연결끈으로 연결 부착하여 반영구적으로 밸브의 봉인을 간편하게 할 수 있게 하므로서 종래의 단점을 해소한 것인데 이를 첨부도면에 의거 상술하면 다음과 같다.
도 1은 본 고안의 예시사시도
도 2는 캡을 닫은 상태의 단면도
〈도면의 주요부분에 대한 부호의 설명〉
1 : 가스용기 2 : 밸브 3 : 입출구
4 : 나사 5 : 캡 6 : 연결끈
가스용기(1)의 상면에 부착된 밸브(2)의 입출구(3)를 봉인함에 있어서, 입출구(3)내면의 나사(4)와의 나사결합으로 입출구(3)를 개폐하는 캡(5)을 연결끈(6)으로 밸브(2)에 연결 설치하여서 됨을 특징으로 하는 것이다.
이와같이 된 본 고안은 밸브(2)의 입출구(3)를 나사결합으로 개폐하는 캡(5)을 밸브(2)자체에 연결끈(6)으로 연결 설치하여서 되는 것이므로 가스용기(1)에 가스를 충전할 때에는 캡(5)을 열어 가스를 충전하고 가스의 충전 후에는 연결끈(6)으로 연결된 캡(5)을 입출구(3)의 내면에 형성된 나사(4)와 나사결합하여 닫게 되면 입출구(3)가 캡(5)에 의해 봉인되며 배달업소에서 가정이나 업소에 배달한 그 자리에서 소비자가 보는 앞에서 캡(5)을 열어 가스관을 연결하게 되면 소비자도 봉인된 상태를 인식하게 되므로 봉인작업을 매우 용이하게 할 수 있으며 특히 캡(5)은 연결끈(6)에 의해 밸브(2)자체에 항상 연결 설치되어 있으므로 분실할 우려가 전혀 없이 반영구적으로 봉인을 간편하게 할 수 있는 것이다.
이와같이 된 본 고안은 종래와 같이 봉인지를 사용하지 않고 밸브(2)에 연결시킨 캡(5)에 의해 봉인을 하게 되므로 봉인을 매우 간편하게 할 수 있고 캡(5)의 분실우려가 없어 봉인을 확실하게 할 수 있을 뿐 아니라 비용이 절감되어 경제적인 효과가 있는 우수한 고안이다.

Claims (1)

  1. 가스용기(1)의 상면에 부착된 밸브(2)의 입출구(3)를 봉인함에 있어서, 입출구(3)내면의 나사(4)와의 나사결합으로 입출구(3)를 개폐하는 캡(5)을 연결끈(6)으로 밸브(2)에 연결 설치하여서 됨을 특징으로 하는 가스용기의 봉인장치.
KR2019990017862U 1999-06-21 1999-08-26 가스용기의 봉인장치 KR200167117Y1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR2019990017862U KR200167117Y1 (ko) 1999-08-26 1999-08-26 가스용기의 봉인장치
US09/468,123 US6180473B1 (en) 1999-06-21 1999-12-21 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019990017862U KR200167117Y1 (ko) 1999-08-26 1999-08-26 가스용기의 봉인장치

Publications (1)

Publication Number Publication Date
KR200167117Y1 true KR200167117Y1 (ko) 2000-02-15

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Application Number Title Priority Date Filing Date
KR2019990017862U KR200167117Y1 (ko) 1999-06-21 1999-08-26 가스용기의 봉인장치

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US (1) US6180473B1 (ko)
KR (1) KR200167117Y1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2002368001A (ja) * 2001-06-07 2002-12-20 Denso Corp 半導体装置及びその製造方法
US6551883B1 (en) * 2001-12-27 2003-04-22 Silicon Integrated Systems Corp. MOS device with dual gate insulators and method of forming the same
US7314812B2 (en) * 2003-08-28 2008-01-01 Micron Technology, Inc. Method for reducing the effective thickness of gate oxides by nitrogen implantation and anneal
US20080150038A1 (en) * 2006-12-20 2008-06-26 Dongbu Hitek Co., Ltd. Method of fabricating semiconductor device
JP2009176808A (ja) * 2008-01-22 2009-08-06 Elpida Memory Inc 半導体装置の製造方法
JP5159708B2 (ja) * 2009-06-17 2013-03-13 パナソニック株式会社 半導体装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514902A (en) * 1993-09-16 1996-05-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having MOS transistor
JPH08139315A (ja) * 1994-11-09 1996-05-31 Mitsubishi Electric Corp Ｍｏｓトランジスタ、半導体装置及びそれらの製造方法
US5872049A (en) * 1996-06-19 1999-02-16 Advanced Micro Devices, Inc. Nitrogenated gate structure for improved transistor performance and method for making same
KR100252545B1 (ko) * 1996-12-20 2000-04-15 김영환 트랜지스터 및 그 제조방법
TW389944B (en) * 1997-03-17 2000-05-11 United Microelectronics Corp Method for forming gate oxide layers with different thickness
US5937301A (en) * 1997-08-19 1999-08-10 Advanced Micro Devices Method of making a semiconductor device having sidewall spacers with improved profiles

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