KR200162273Y1 - Dust removing apparatus for wet cleaning process - Google Patents
Dust removing apparatus for wet cleaning process Download PDFInfo
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- KR200162273Y1 KR200162273Y1 KR2019930028651U KR930028651U KR200162273Y1 KR 200162273 Y1 KR200162273 Y1 KR 200162273Y1 KR 2019930028651 U KR2019930028651 U KR 2019930028651U KR 930028651 U KR930028651 U KR 930028651U KR 200162273 Y1 KR200162273 Y1 KR 200162273Y1
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- wafer
- wet cleaning
- wafer carrier
- hydrofluoric acid
- foreign substances
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004140 cleaning Methods 0.000 title claims abstract description 34
- 239000000428 dust Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 claims abstract description 61
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000126 substance Substances 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 239000007853 buffer solution Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 238000011109 contamination Methods 0.000 abstract description 8
- 238000005406 washing Methods 0.000 abstract description 4
- 230000001276 controlling effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 고안은 웨이퍼 산화막 제거 및 세정 공정 중 발생하는 이물질들을 제거하여 웨이퍼의 오염을 방지하기 위한 습식 세정 장비의 이물질 제거장치에 관한 것으로, 웨이퍼를 완충용액 불산 중에 담가 산화막 제거 및 세정을 행하는 습식 세정 장비에 있어서, 다수개의 웨이퍼를 수납 지지하는 웨이퍼 캐리어(2)를 전도체로 형성하여 도체화하고, 상기 웨이퍼 캐리어(2)를 대전시키기 위한 도전부(10) 및 전위 조절을 위한 전압 조절부(20)를 완충용액 불산이 채워진 세정조(1)에 설치하여 공정 중 발생하는 이물질들을 전기적인 대전으로 흡착, 포집하여 제거토록 구성한 것이다.The present invention relates to a foreign matter removal device of a wet cleaning device for removing contamination of wafers by removing foreign substances generated during wafer oxide film removal and cleaning process, and a wet cleaning device for immersing a wafer in buffered hydrofluoric acid to remove and clean the oxide film. In the present invention, a wafer carrier (2) for receiving and supporting a plurality of wafers is formed as a conductor to conduct conductors, and a conductive part (10) for charging the wafer carrier (2) and a voltage regulating part (20) for controlling potentials. Is installed in the washing tank (1) filled with buffered hydrofluoric acid to adsorb, collect and remove foreign substances generated during the process by electrical charging.
Description
제1도는 일반적인 습식 세정 장비의 공정도.1 is a process diagram of a typical wet cleaning equipment.
제2도는 본 고안 장치의 구성 및 작용을 보인 습식 세정장비의 공정도.2 is a process chart of the wet cleaning equipment showing the configuration and operation of the device.
〈도면의 주요부분에 대한 부호의 설명〉<Explanation of symbols for main parts of drawing>
1 : 세정조 2 : 웨이퍼 캐리어1 cleaning tank 2 wafer carrier
10 : 도전부 20 : 전압 조절부10: conductive part 20: voltage adjusting part
본 고안은 완충용액 불산(BHF)을 이용하여 웨이퍼의 산화막을 제거하거나, 또는 세정하는 습식 세정 장비의 이물질 제거장치에 관한 것으로, 특히 공정시 웨이퍼를 수납지지하는 웨이퍼 캐리어에 하천된 이물질들을 전기적인 대전으로 흡착, 포획하여 제거함으로써 이물질로 인한 웨이퍼의 오염을 방지하도록 한 습식 세정장비의 이물질 제거장치에 관한 것이다.The present invention relates to a foreign material removal device of a wet cleaning device that removes or cleans an oxide film of a wafer by using buffer solution hydrofluoric acid (BHF), and in particular, it is possible to electrically remove foreign matters streamed on a wafer carrier that holds a wafer during processing. The present invention relates to a debris removal device of a wet cleaning device to prevent contamination of a wafer due to debris by adsorption, capture and removal by charging.
일반적으로 웨이퍼의 산화막을 제거하거나, 세정하는 공정은 세정장비를 이용하고 있는 바, 이는 하나의 커다란 세정조에 완충용액불산을 가득 채운 후, 이 세정조에 웨이퍼를 담그는 방식으로 이루어진다.In general, a process of removing or cleaning an oxide film of a wafer is performed by using a cleaning equipment, which is performed by filling a large washing tank with buffer solution hydrofluoric acid and then dipping the wafer into the cleaning tank.
이때 상기 웨이퍼는 다수매가 별도의 웨이퍼 캐리어에 수납 지지되어 일괄적으로 세정조에 잠기게 된다.At this time, the plurality of wafers are accommodated and supported in a separate wafer carrier to be immersed in a cleaning tank in a batch.
상기한 바와 같은 구조로 세정을 행하는 일반적인 습식 세정장비의 공정도가 제1도에 도시되어 있는 바, 이를 간단히 살펴보면 다음과 같다.The process chart of a general wet cleaning equipment for cleaning in the structure as described above is shown in Figure 1, which is briefly described as follows.
도면에서 1은 세정조를 보인 것이고, 2는 웨이퍼 캐리어를 보인 것으로, 도시한 바와 같이 상기 세정조(1)에는 완충용액 불산이 가득 채워져 있고, 상기 웨이퍼 캐리어(2)에는 다수개의 웨이퍼(3)가 수납 지지되어 있으며, 상기 웨이퍼 캐리어(2)는 공정시 도면에서와 같이 세정조(1)에 잠기게 된다.In the drawing, 1 shows a cleaning tank, 2 shows a wafer carrier, and as shown, the cleaning tank 1 is filled with a buffer solution hydrofluoric acid, and the wafer carrier 2 has a plurality of wafers 3. The wafer carrier 2 is immersed in the cleaning tank 1 as shown in the drawing during the process.
상기와 같이 진행하여 산화막 제거 및 세정 공정을 진행하는 것이다.Proceed as above to proceed with the oxide film removal and cleaning process.
그러나, 상기한 바와 같은 종래의 구조에 있어서는 공정시 웨이퍼 캐리어(2)내에 발생하는 이물질들을 용이하게 제거할 수 없음으로써 그 이물질들이 인접 웨이퍼에 재흡착되어 웨이퍼(3)를 오염시킬 뿐만 아니라 그 이물질들이 웨이퍼 캐리어(2)에 그대로 남아 있게 되어 차후 공정의 웨이퍼(3)에 이물질로 남게되는 문제가 있었다.However, in the conventional structure as described above, foreign matters generated in the wafer carrier 2 during the process cannot be easily removed, so that the foreign matters are resorbed to the adjacent wafer to contaminate the wafer 3 as well as the foreign matters. Were left in the wafer carrier 2 and remained as foreign matter in the wafer 3 of the subsequent process.
즉, 완충용액 불산을 이용한 일반적인 세정 공정에서는 SiO2+6HF2- → H2SiF7- +2H2O의 반응식에 의하여 공정이 이루어지는데, 이때 상기 완충용액 불산(BHF)중에는 HF 보다 HF2- 이온이 현격하게 많이 존재하므로 상기 반응식에서와 같이 용해성 복합제(H2SiF7-)가 부산물로 생기면서 식각이 진행되게 된다.That is, in the general cleaning process using the buffer solution hydrofluoric acid, the process is performed by the reaction formula of SiO 2 + 6HF 2- → H 2 SiF 7- + 2H 2 O, wherein in the buffer solution hydrofluoric acid (BHF), HF 2- Since there are a lot of ions, as shown in the reaction scheme, the soluble complex (H 2 SiF 7- ) is generated as a by-product and etching proceeds.
이와 같이 생성된 이물질들이 인접 웨이퍼(3)에 재흡착되어 차후 공정에서 이물질로 남게 됨으로써 웨이퍼 오염을 초래하는 것이므로 이물질의 제거가 요구되었다.Since the foreign matters generated as described above are resorbed to the adjacent wafer 3 and remain as foreign matters in a subsequent process, the foreign matters are required to remove the foreign matters.
이를 감안하여 안출한 본 고안의 목적은 공정시 발생되어 웨이퍼 캐리어에 하전되는 이물질들을 전기적인 대전 방식을 흡착, 포집하여 제거함으로써 이물질로 인한 웨이퍼 오염을 방지하도록 한 습식 세정 장비의 이물질 제거장치를 제공함에 있다.In view of this, the object of the present invention is to provide a debris removal device of a wet cleaning device that prevents wafer contamination due to debris by adsorbing, collecting and removing the electric charging method generated during the process and debris charged on the wafer carrier. Is in.
상기와 같은 본 고안의 목적을 달성하기 위하여, 웨이퍼를 완충용액 불산 중에 담가 산화막 제거 및 세정을 행하는 습식 세정 장비에 있어서, 다수개의 웨이퍼를 수납지지하는 웨이퍼 캐리어를 전도체로 형성하여 도체로 형성하고, 상기 웨이퍼 캐리어를 대전시키기 위한 도전부 및 전위 조절을 위한 전압 조절부를 완충용액 불산이 채워진 세정조에 설치하여 공정 중 발생하는 이물질들을 대전된 캐리어에 흡착, 포집하여 제거토록 구성한 것을 특징으로 하는 습식 세정 장비의 이물질 제거장치가 제공된다.In order to attain the object of the present invention as described above, in a wet cleaning apparatus in which a wafer is immersed in a buffer solution hydrofluoric acid to remove and clean an oxide film, a wafer carrier for receiving and supporting a plurality of wafers is formed as a conductor, Wet cleaning equipment comprising a conductive part for charging the wafer carrier and a voltage adjusting part for adjusting the potential in a cleaning tank filled with buffered hydrofluoric acid to adsorb, collect and remove foreign substances generated during the process to the charged carrier. The foreign material removal apparatus of the present invention is provided.
상기와 같이 된 본 고안에 의하면, 공정시 발생되는 공정 부산물등의 이물질들이 전기적인 대전에 의해 웨이퍼 캐리어의 내면에 흡착, 포집되므로 이물질들의 인접 웨이퍼에 재흡착되어 발생하는 웨이퍼 오염을 방지할 수 있고, 또 상기와 같이 웨이퍼 캐리어에 흡착된 이물질들은 공정 후, (-) 전위를 인가하여 세정한 후 다음 공정에 사용하므로 앞공정의 이물질들이 다음 공정에서 이물질로 작용하지 않게 된다. 따라서, 이물질들로 인한 웨이퍼 오염을 완전하게 방지할 수 있는 효과가 있는 것이다.According to the present invention as described above, since foreign substances such as process by-products generated during the process are adsorbed and collected on the inner surface of the wafer carrier by electrical charging, it is possible to prevent wafer contamination caused by re-adsorption on adjacent wafers of the foreign substances. In addition, the foreign matters adsorbed on the wafer carrier as described above are used in the next process after cleaning by applying a (-) potential after the process, so that the foreign matters of the previous process do not act as foreign matter in the next process. Therefore, there is an effect that can completely prevent wafer contamination due to foreign matters.
이하, 상기한 바와 같은 본 고안에 의한 습식 세정 장비의 이물질 제거장치를 첨부 도면에 의거하여 보다 상세히 설명한다.Hereinafter, the foreign matter removal apparatus of the wet cleaning equipment according to the present invention as described above will be described in more detail based on the accompanying drawings.
첨부한 제2도는 본 고안 장치의 구조를 보인 습식 세정 장비의 공정도로서, 이에 도시한 바와 같이, 본 고안에 의한 습식 세정장비의 이물질 제거장치는 SiC등과 같은 전도체로 형성되어 공정 중 대전되는 전위로 공정시 발생하는 이물질들을 흡착, 포집할 수 있도록된 다수개의 웨이퍼(3)를 수납 지지하는 웨이퍼 캐리어(2)와, 상기 웨이퍼 캐리어(2)를 대전시킬 수 있도록 세정조(1)에 설치된 도전부(10) 및 상기 도전부(10)의 전위를 조절하기 위한 전압 조절부(20)로 크게 구성되어 있다.Attached FIG. 2 is a process chart of the wet cleaning equipment showing the structure of the device of the present invention. As shown in the drawing, the foreign material removing device of the wet cleaning device of the present invention is formed of a conductor such as SiC and charged to a potential charged during the process. Wafer carrier 2 for accommodating and supporting a plurality of wafers 3 capable of absorbing and collecting foreign substances generated during the process, and a conductive portion provided in the cleaning tank 1 for charging the wafer carrier 2. And a voltage adjusting unit 20 for adjusting the potential of the conductive portion 10.
여기서, 상기한 도체 웨이퍼 캐리어(2)를 형성함에 있어서는 SiC이외에도 대전되는 재질이면 어떠하여도 무방하며, 상기 도전부(10)에는 웨이퍼 캐리어(2)와 전기적인 접촉을 이루는 전기 접촉단(11)이 형성되어 있다.Here, in forming the conductor wafer carrier 2, any material may be charged in addition to SiC, and the electrical contact end 11 in electrical contact with the wafer carrier 2 is provided in the conductive portion 10. Is formed.
즉, 본 고안은 웨이퍼를 완충용액 불산 중에 담가 산화막 제거 및 세정을 행하는 습식 세정 장비에 있어서, 다수개의 웨이퍼(3)를 수납 지지하는 웨이퍼 캐리어(2)를 전도체로 형성하여 도체화하고, 상기 웨이퍼 캐리어(2)를 대전시키기 위한 도전부(10) 및 전위 조절을 위한 전압 조절부(20)를 완충용액 불산이 채워진 세정조(1)에 설치하여 공정 중 발생하는 이물질들을 전기적인 대전으로 흡착, 포집하여 제거토록 구성한 것으로, 도면에서 종래 구성과 동일한 부분에 대해서는 동일 부호를 부여하였다.That is, the present invention is a wet cleaning apparatus in which a wafer is immersed in a buffer solution hydrofluoric acid, and an oxide film is removed and cleaned. The wafer carrier 2, which accommodates and supports a plurality of wafers 3, is formed as a conductor to conduct the wafer. The conductive part 10 for charging the carrier 2 and the voltage adjusting part 20 for controlling the potential are installed in the washing tank 1 filled with the buffered hydrofluoric acid to adsorb foreign substances generated during the process by electrical charging, It is configured to be collected and removed, and the same reference numerals are given to the same parts as in the prior art in the drawings.
상기와 같이 구성된 본 고안은 통상적인 웨이퍼 산화막 제거 및 세정공정시 동작하여 이물질들을 제거하는 작용을 하게 되는 바, 즉 도전부(10)로 부터 대전된 전위가 웨이퍼 캐리어(2)에 전도되어, 공정시 발생되는 이물질들을 웨이퍼 캐리어(2)의 내면에 흡착, 포집하게 된다.The present invention configured as described above operates during a normal wafer oxide film removal and cleaning process to remove foreign substances, that is, the electric potential charged from the conductive portion 10 is conducted to the wafer carrier 2, thereby The foreign substances generated during the adsorption are collected on the inner surface of the wafer carrier 2.
상기와 같은 작용으로 웨이퍼 캐리어(2)에 흡착, 포집된 이물질들은 공정 후 순수 수세조에서 상기한 방법과 동일한 방법으로 전위를 인가하되, (-)전위를 인가하여 웨이퍼 캐리어(2)에 흡착, 포집된 이물질들을 제거한 후 다음 공정에 사용하게 된다.The foreign substances adsorbed and collected on the wafer carrier 2 by the above action are applied with the potential in the same manner as described above in the pure water washing tank after the process, but the negative potential is applied to the wafer carrier 2, The collected foreign matter is removed and used in the next process.
따라서, 이물질들이 웨이퍼 캐리어(2)의 내면에 흡착, 포집되고, 다음 공정에서 차후 이물질로 작용하지 않게 되므로 이물질로 인한 웨이퍼 오염을 방지할 수 있는 것이다.Therefore, foreign matters are adsorbed and collected on the inner surface of the wafer carrier 2, and thus the wafer contamination due to the foreign matters can be prevented because they do not act as foreign matters in the next process.
이상에서 상세히 설명한 바와 같이, 본 고안에 의하면, 공정시 발생되는 공정 부산물등의 이물질들이 전기적인 대전에 의해 웨이퍼 캐리어의 내면에 흡착, 포집되므로 이물질들이 인접 웨이퍼에 재흡착되어 발생하는 웨이퍼 오염을 방지할 수 있고, 또 상기와 같이 웨이퍼 캐리어에 흡착된 이물질들은 공정 후, (-)전위를 인가하여 세정한 후 다음 공정에 사용하므로 앞공정의 이물질들이 다음 공정에서 이물질로 작용하지 않게 된다. 따라서, 이물질들로 인한 웨이퍼 오염을 완전하게 방지할 수 있는 효과가 있는 것이다.As described in detail above, according to the present invention, foreign substances such as process by-products generated during the process are adsorbed and collected on the inner surface of the wafer carrier by electrical charging, thereby preventing wafer contamination caused by the re-adsorption of the foreign substances on the adjacent wafer. In addition, since the foreign substances adsorbed on the wafer carrier as described above are used in the next process after applying the (-) potential to clean after the process, the foreign substances of the previous process does not act as foreign matter in the next process. Therefore, there is an effect that can completely prevent wafer contamination due to foreign matters.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930028651U KR200162273Y1 (en) | 1993-12-20 | 1993-12-20 | Dust removing apparatus for wet cleaning process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930028651U KR200162273Y1 (en) | 1993-12-20 | 1993-12-20 | Dust removing apparatus for wet cleaning process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950021391U KR950021391U (en) | 1995-07-28 |
| KR200162273Y1 true KR200162273Y1 (en) | 1999-12-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019930028651U KR200162273Y1 (en) | 1993-12-20 | 1993-12-20 | Dust removing apparatus for wet cleaning process |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200162273Y1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010004742A (en) * | 1999-06-29 | 2001-01-15 | 김영환 | Method of a CMP post-cleaning in a semiconductor device |
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1993
- 1993-12-20 KR KR2019930028651U patent/KR200162273Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950021391U (en) | 1995-07-28 |
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