KR20010111458A - Positive-working photoresist composition - Google Patents

Abstract

It is an object of the present invention to provide a wide range of defocusing latitude, excellent process tolerance and line edge roughness or resolution, improved exposure margin, reduced development defects, as well as solvent solids in the manufacture of semiconductor devices. The present invention provides a positive photoresist composition capable of preventing the generation of particles in the case of dissolving or in the storage over time, and in preventing the variation in sensitivity due to the storage over time.

The present invention consists of a positive photoresist composition characterized by containing a specific acid-decomposable resin, a specific acid generator, and a specific solvent or a specific compound.

Description

Positive Photoresist Composition {POSITIVE-WORKING PHOTORESIST COMPOSITION}

The present invention relates to positive photoresist compositions for use in ultramicrolithography processes such as the manufacture of ultra-LSIs and high capacity microchips, and other photographic processes. More particularly, the present invention relates to a positive photoresist composition having a large defocus latitude, improved line edge roughness, and improved exposure margin. In addition, the present invention relates to a positive photoresist composition capable of reducing development defects, preventing generation of particles, and reducing variation in sensitivity due to time. In addition, the present invention relates to an ultraviolet ray photoresist composition capable of forming a very precise and minute pattern using an ultraviolet ray region including an excimer laser light, particularly a light having a wavelength of 250 nm or less.

In recent years, the degree of integration of integrated circuits has increased even more, and in the manufacture of semiconductor substrates such as ultra-LSI, it is necessary to process ultra-fine patterns having line widths of 1/2 micron or less. In order to satisfy the necessity, the wavelength used for the exposure apparatus used for photolithography is shorter. Nowadays, the use of short wavelength excimer laser light (XeCl, KrF, ArF, etc.) is being studied. have.

Chemical amplification resists are used for pattern formation in lithography in this wavelength region.

In general, chemical amplification resists can be roughly divided into three types: two-component, 2.5-component, and three-component. The two-component system is a combination of a compound that generates an acid by photolysis (hereinafter referred to as a photoacid generator) and a binder resin. The binder resin is a resin that decomposes under the action of an acid and retains in the molecule a group (called an acid-decomposable group) that increases the solubility in the alkaline developer. The 2.5 component system contains a low molecular compound further having an acid-decomposable group in such a two component system. A three component system contains a photo-acid generator, alkali-soluble resin, and the said low molecular weight compound.

Although it is preferable as said chemical amplification-resist photoresist for ultraviolet rays and ultraviolet rays irradiation, it is necessary to satisfy the required characteristic at the time of further use. As a photoresist composition for an ArF light source, a photoresist composition is proposed in which a (meth) acrylic resin having a lower absorption than a partially hydrated styrene resin is combined with a compound that generates an acid by light.

For example, Japanese Patent Laid-Open Nos. 7-199467, 7-252324, and the like. Among these, Japanese Patent Laid-Open No. 6-289615 discloses a resin in which a tertiary carbon organic group is ester-bonded to oxygen of a carboxyl group of acrylic acid.

Furthermore, Japanese Patent Application Laid-open No. Hei 7-234511 discloses acid-decomposable resins having acrylate or fumaric acid esters as half-group structural units, but the pattern profile, substrate adhesiveness, etc. are insufficient, and satisfactory performance is not obtained. .

Moreover, in order to provide dry etching resistance, the resin in which the alicyclic hydrocarbon site | part was introduce | transduced is proposed.

Japanese Patent Laid-Open Nos. 9-73173, 9-90637, and 10-161313 disclose alkali-soluble groups and their alkali-soluble groups protected by a structure containing an alicyclic group, and their alkali-soluble groups are desorbed by an acid to give alkali solubilization. A resist material using an acid sensitive compound containing a structural unit to be described is described.

In Japanese Patent Laid-Open Nos. 9-90637, 10-207069 and 10-274852, a resist composition containing an acid-decomposable resin having a specific lactone structure is described.

In the lithography process for manufacturing devices using designs of 0.18 mu m and 0.13 mu m, a light having a wavelength of 193 nm is often used for exposure radiation, and therefore a resist polymer that does not contain much ethylenic unsaturation is required.

In Japanese Patent Laid-Open Nos. 10-10739 and 10-307401, the transparency of wavelength 193nm is not improving, but it is not necessarily high sensitivity, and resolution is insufficient when considering lithography below 0.13㎛. The resist performance of is not satisfactory.

Japanese Patent Application Laid-open No. Hei 10-130340 discloses a chemically amplified resist containing a terpolymer having a specific repeating structural unit having a norbornene structure in its main chain.

Japanese Patent Laid-Open No. 11-305444 discloses a repeating structural unit having an admantan structure in a side chain and a resin containing maleic anhydride as a repeating structural unit.

However, such chemically amplified resists have a narrow defocusing latitude and have room for improvement. Moreover, in the photoresist composition for far-ultraviolet exposure, there were many inadequate points regarding the performance of line edge roughness, and improvement was needed. Here, the line edge roughness means that the line pattern of the resist and the edge of the substrate interface vary irregularly in the direction perpendicular to the line direction due to the characteristics of the resist. Say that. This unevenness is transferred by an etching process using the resist as a mask, so as to lower the ratio of the product to the raw material in order to deteriorate the electrical characteristics.

In particular, as the size of the resist pattern becomes 1/4 micron or less, there is a high demand for improvement of line edge roughness, but no guidelines for improvement have been disclosed so far.

In addition, such chemically amplified resists still had room for improvement in exposure margins. Here, the exposure margin means a phenomenon in which the line width of the pattern obtained according to this changes when the exposure amount changes.

Such chemically amplified resists still suffer from problems such as defects during development, dissolution of solids in solvents, particles during storage over time, or fluctuations in sensitivity due to storage over time. Occurred.

In addition, such chemically amplified resists were not satisfactory in terms of resolution of minute contact hole patterns and trench patterns.

The contact hole is a hole through which the electrode metal of the semiconductor device passes to the surface of the semiconductor. In the manufacture of semiconductor devices, not only fine line widths have been formed in recent years, but also micronization has been progressed in the form of contact holes. There is a need for a positive photoresist composition capable of resolving hole patterns. In other words, such a resist material may be designed in order to resolve the fine contact hole, but it is not known at all. It is also known that resists suitable for obtaining fine line widths are not necessarily suitable for the resolution of minute contact hole patterns.

The trench refers to a groove-shaped pattern in which contact holes are continuous, and the trench is also micronized similarly as in the contact hole, and a positive photoresist composition capable of resolving the fine trench pattern is required.

Accordingly, a first object of the present invention is to provide a positive photoresist composition having a wide defocus latitude in manufacturing a semiconductor device and having excellent process tolerance.

It is also a second object of the present invention to provide a positive photoresist composition having improved edge roughness in manufacturing a semiconductor device.

In addition, a third object of the present invention is to provide a positive photoresist having an effect of improving the exposure margin (particularly, the exposure margin of the isolated line) during manufacturing of the semiconductor device, i. It is to provide a composition.

It is a fourth object of the present invention to provide a positive photoresist composition in which development defects are reduced in manufacturing a semiconductor device.

A fifth object of the present invention is to provide a positive photoresist composition which can prevent generation of particles when the solid content is dissolved in a solvent or when stored over time.

A sixth object of the present invention is to provide a positive photoresist composition capable of preventing variations in sensitivity due to time-lapse preservation.

In addition, a seventh object of the present invention is to provide a positive photoresist composition having good resolution in contact hole patterns and trench patterns in the manufacture of semiconductor devices.

MEANS TO SOLVE THE PROBLEM As a result of earnestly examining the constituent material of a positive chemically amplified resist composition, it confirmed that the objective of this invention was achieved by using acid-decomposable resin containing the repeating structural unit of a specific structure, and completed this invention. . Moreover, it confirmed that the objective of this invention is achieved also by using together a specific acid-decomposable resin and a specific acid generator, and came to this invention. In addition, by using together an acid-decomposable resin containing a repeating structural unit of a specific structure and a specific solvent, as well as using a combination of an acid-decomposable resin containing a repeating structural unit of a specific structure and a specific compound. It was found that this is achieved.

That is, the said object is achieved by the following structures.

(1) (A) A resin containing a repeating structural unit represented by the following general formula (I) and a repeating structural unit represented by the following general formula (II), wherein the dissolution rate in an alkali developer is increased by the action of an acid. , And

(B) A positive photoresist composition containing a compound that generates an acid by irradiation with actinic light or radiation.

[In General Formula (I), R <_11> -R <_14> represents the alkyl group which may respectively have a hydrogen atom or a substituent. a is 0 or 1;

In General Formula (II), R ₁ represents a hydrogen atom or a methyl group. A represents a single bond or a combination of two or more groups selected from the group consisting of a single bond, an alkylene group, a cycloalkylene group, an ether group, a thioether group, a carbonyl group and an ester group.

W represents one or more of the substructures containing alicyclic hydrocarbons represented by the following general formulas (pI) to (pVI).]

[Wherein, R ₁₅ represents a methyl group, an ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group or sec-butyl group, and Z represents an atomic group necessary for forming an alicyclic hydrocarbon group together with a carbon atom .

R ₁₆ to R ₂₀ each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R ₁₆ to R ₁₈ or any one of R ₁₉ and R ₂₀ is alicyclic. A formula hydrocarbon group is shown.

R ₂₁ to R ₂₅ each independently represent a hydrogen atom, a C 1-4 carbon group, a linear or branched alkyl group or an alicyclic hydrocarbon group, provided that at least one of R ₂₁ to R ₂₅ represents an alicyclic hydrocarbon group. In addition, any one of R <_23> , R <_25> represents a C1-C4 linear or branched alkyl group or alicyclic hydrocarbon group.

R ₂₆ to R ₂₉ each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, except that at least one of R ₂₆ to R ₂₉ represents an alicyclic hydrocarbon group.]

(2) The positive photoresist composition according to the above (1), wherein the content of the repeating structural unit represented by the general formula (II) is 5 mol% to 30 mol% with respect to all the repeating structural units.

(3) The positive photoresist composition according to the above (1), wherein the content of the repeating structural unit represented by the general formula (II) is 15 mol% to 20 mol% based on the total repeating structural units.

(4) (A) A resin containing a repeating structural unit represented by the following general formula (I) and a repeating structural unit represented by the following general formula (IIA), wherein the dissolution rate in an alkaline developer is increased by the action of an acid. , And

(B) A positive photoresist composition containing a compound that generates an acid by irradiation with actinic light or radiation.

[In General Formula (I), R <_11> -R <_14> represents the alkyl group which may respectively have a hydrogen atom or a substituent. a is 0 or 1;

In general formula (IIA), A represents single-bond, a combination of 2 or more groups chosen from the group which consists of a single bond, an alkylene group, a cycloalkylene group, an ether group, a thioether group, a carbonyl group, and an ester group.

W represents one or more of the substructures containing alicyclic hydrocarbons represented by the following general formulas (pI) to (pVI).]

[Wherein, R ₁₅ represents a methyl group, an ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group or sec-butyl group, and Z represents an atomic group necessary for forming an alicyclic hydrocarbon group together with a carbon atom .

R ₁₆ to R ₂₀ each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R ₁₆ to R ₁₈ or any one of R ₁₉ and R ₂₀ is alicyclic. A formula hydrocarbon group is shown.

R ₂₁ to R ₂₅ each independently represent a hydrogen atom, a C 1-4 carbon group, a linear or branched alkyl group or an alicyclic hydrocarbon group, provided that at least one of R ₂₁ to R ₂₅ represents an alicyclic hydrocarbon group. In addition, any one of R <_23> , R <_25> represents a C1-C4 linear or branched alkyl group or alicyclic hydrocarbon group.

R ₂₆ to R ₂₉ each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, except that at least one of R ₂₆ to R ₂₉ represents an alicyclic hydrocarbon group.]

(5) The imide sulfonate compound represented by the following general formula (PAG6 '), or the following general formula (1), which is an acid generating compound by irradiation of the above-mentioned (B) actinic light or radiation Positive photoresist composition containing a diazo disulfone type compound represented by PAG7 ').

[In formula (PAG6 '), R ⁶⁰ represents the alkyl group which may have a substituent or the allyl group which may have a substituent. A ⁶⁰ represents an alkylene group, a cyclic alkylene group, an alkenylene group, a cyclic alkenylene group, or an allylene group which may have a substituent.

In formula (PAG7 '), R ⁷⁰ each independently represents a straight chain, branched or cyclic alkyl group which may have a substituent, or an allyl group which may have a substituent.]

(6) The positive photoresist composition according to the above (5), further comprising an sulfonium salt compound as the compound (B) which generates an acid by irradiation with actinic light or radiation.

(7) The positive photo containing the compound represented by the following general formula (I ')-(III') in the compound which generate | occur | produces an acid by irradiation of said (B) actinic light or a radiation in said (1). Resist composition.

[In Formulas (I ') to (III'):

R ₅₁ to R ₈₇ are the same or different and represent a hydrogen atom, a straight chain, branched or cyclic alkyl group, a straight chain, branched or cyclic alkoxy group, a hydroxyl group, a halogen atom or a -SR ₈₈ group. R ₈₈ represents a straight chain, branched or cyclic alkyl group or allyl group. In addition, two or more of R ₅₁ to R ₆₅ , R ₆₆ to R ₇₇ , and R ₇₈ to R ₈₇ may be bonded to each other to include a ring including one or two or more selected from a single bond, carbon, oxygen, sulfur, and nitrogen. May be formed.

X ^- is R ^F SO ₃ ^- represents an. Here, R ^F is a straight-chain, branched or cyclic alkyl group substituted by 2 or more carbon atoms, fluorine.]

(8) The positive photoresist composition as described in the above (7), wherein R ^F of X ⁻ is a linear alkyl group substituted with fluorine represented by CF ₃ (CF ₂ ) y (where y is an integer of 1 to 15). .

(9) The positive photoresist composition according to the above (7), wherein y is an integer of 1 to 9.

(10) The positive photoresist composition according to the above (7), wherein y is an integer of 1 to 5.

(11) In the above (1), (SI) at least one selected from the following solvent A1 group and at least one selected from the following solvent B1 group, or at least one selected from the solvent A1 group and the following solvent C1 group Mixed solvent further containing at least one selected from:

Group A1: Bone Ketones

Group B1: alkyl lactic acid, alkyl alkoxypropionate, acetate ester and propylene glycol monoalkyl ether

Group C1: γ-butyrolactone, ethylene carbonate and propylene carbonate

Positive photoresist composition containing.

(12) In the above (1), (SI) further contains one or more selected from the following solvent A1 group, one or more selected from the following solvent B1 group, and one or more selected from the following solvent C1 group Mixed solvents:

Group A1: Bone Ketones

Group B1: alkyl lactic acid, alkyl alkoxypropionate, acetate ester and propylene glycol monoalkyl ether

Group C1: γ-butyrolactone, ethylene carbonate and propylene carbonate

Positive photoresist composition containing.

(13) In the above (1), (SII) one or more selected from the following solvent A2 group, one or more selected from the following solvent B2 group, or one or more selected from the solvent A2 group, and the following solvent C2 Mixed solvent further containing at least one selected from the group:

Group A2: propylene glycol monoalkyl ether carboxylate

B2 group: propylene glycol monoalkyl ether, alkyl lactate, acetate ester, chain ketone and alkyl alkoxypropionate

Group C2: γ-butyrolactone, ethylene carbonate and propylene carbonate

Positive photoresist composition containing.

(14) In the above (1), (SII) further contains one or more selected from the following solvent A2 group, one or more selected from the following solvent B2 group, and one or more selected from the following solvent C2 group Mixed solvents:

Group A2: propylene glycol monoalkyl ether carboxylate

B2 group: propylene glycol monoalkyl ether, alkyl lactate, acetate ester, chain ketone and alkyl alkoxypropionate

Group C2: γ-butyrolactone, ethylene carbonate and propylene carbonate

Positive photoresist composition containing.

(15) The positive photoresist composition according to (1), further containing a compound represented by the following General Formula (CI) or (CII).

[In general formula (CI), X represents an oxygen atom, a sulfur atom, -N ( _R53 )-, or a single bond. R ₅₁ , R ₅₂ and R ₅₃ each independently represent a hydrogen atom or an alkyl group, and R 'represents a group constituting an acid-decomposable group at -COOR'. R represents an n 1 -valent moiety including a bridged hydrocarbon, a saturated cyclic hydrocarbon or a naphthalene ring. n1 represents the integer of 1-4, q1 represents the integer of 0-10.

In General Formula (CII), R ₆₀ represents an alkyl group or a halogen atom, R ₆₁ represents a group constituting an acid-decomposable group at -OR ₆₁ , and m1 represents an integer of 0 to 4. p1 represents the integer of 1-4.]

(16) The compound which has at least 2 structure which has at least some substituent containing the carboxylic acid group protected by the acid labile group on the polycyclic structure represented by following General formula (CIII) in said (1). A positive photoresist composition containing.

(17) The positive photoresist composition according to any one of (1) to (16), wherein the resin (A) further contains a repeating structural unit represented by the following general formula (III).

In formula (III):

Z ₂ represents -O- or -N (R ₃ )-. Here, R ₃ represents a hydrogen atom, a hydroxyl group or -OSO ₂ -R ₄ . R ₄ represents an alkyl group, haloalkyl group, cycloalkyl group or camphor residue.]

(18) The positive photoresist composition according to any one of (1) to (17), further comprising (D) an organic basic compound, (E) a fluorine-based and / or silicone-based surfactant.

Hereinafter, the component used for this invention is demonstrated in detail.

[1] (A) Resin whose dissolution rate in an alkali developer increases due to the action of an acid (hereinafter referred to as acid-decomposable resin)

In general formula (I) which shows the repeating structural unit of acid-decomposable resin, R <_11> -R <_14> represents the hydrogen atom or the alkyl group which may have a substituent.

As an alkyl group of R <_11> -R <_14> , it is preferable that it is C1-C12, More preferably, it is C1-C10, Specifically, a methyl group, an ethyl group, a propyl group, isopropyl group, n-butyl group, iso A butyl group, sec-butyl group, t-butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, and decyl group are mentioned preferably. As a substituent of this alkyl group, a hydroxyl group, an alkoxy group, an alkoxyalkoxy group, etc. are mentioned. The preferable carbon number of such an alkoxy group and an alkoxyalkoxy group is four or less. In general formula (I), a is 0 or 1.

In General Formula (II) representing the repeating unit of the acid-decomposable resin, R ₁ represents a hydrogen atom or a methyl group.

In general formula (II) and (IIA), the group represented by following formula is mentioned as an alkylene group of A.

[C (Rf) (Rg)] r-

In the formula, Rf and Rg represent a hydrogen atom, an alkyl group, a substituted alkyl group, a halogen atom, a hydroxyl group and an alkoxy group, and both may be the same or different. The alkyl group is preferably a lower alkyl group such as methyl group, ethyl group, propyl group, isopropyl group or butyl group, and more preferably is selected from methyl group, ethyl group, propyl group and isopropyl group. And halogen atoms and alkoxy groups. As an alkoxy group, C1-C4, such as a methoxy group, an ethoxy group, a propoxy group, butoxy group, is mentioned. Examples of the halogen atom include chlorine atom, bromine atom, fluorine atom and iodine atom. r is an integer of 1-10.

In general formula (II) and (IIA), although there exist some C3-C10 as the cycloalkylene group of A, a cyclopentyl group, a cyclohexylene group, a cyclooctylene group, etc. are mentioned.

In formulas (II) and (IIA), W represents one or more of the substructures containing alicyclic hydrocarbons represented by formulas (pI) to (pVI).

In the general formulas (pI) to (pVI), the alkyl group in R ₁₆ to R ₂₉ represents a straight or branched alkyl group having 1 to 4 carbon atoms, which may be substituted or unsubstituted. Examples of the alkyl group include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group and t-butyl group.

In addition, other substituents of the alkyl group include an alkoxy group having 1 to 4 carbon atoms, a halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom), acyl group, acyloxy group, cyano group, hydroxyl group, carboxyl group, alkoxycarbonyl group And nitro groups.

In R ₁₅ to R ₂₉ , the alicyclic hydrocarbon or the alicyclic hydrocarbon group formed by Z and a carbon atom may be alicyclic or polycyclic. Specifically, the group which has a C5 or more monocyclic, bicyclic, tricyclic, tetracyclic structure, etc. are mentioned. 6-30 are preferable and, as for carbon number, 7-25 are especially preferable. Such alicyclic hydrocarbon group may have a substituent.

Below, the structural example of an alicyclic part is shown in an alicyclic hydrocarbon group.

In the present invention, preferred examples of the alicyclic moiety include an admanthyl group, a nordemanthyl group, a decarin residue group, a tricyclodecanyl group, a tetracyclododecanyl group, a norbornyl group, a cedrol group, a cyclohexyl group, and a cyclohep A methyl group, a cyclooctyl group, a cyclo decanyl group, and a cyclododecanyl group are mentioned. More preferably, they are an admanthyl group, a decalin residue group, a norbornyl group, a cedrol group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecanyl group, and a cyclododecanyl group.

Substituents of such alicyclic hydrocarbon groups include alkyl groups, substituted alkyl groups, halogen atoms, hydroxyl groups, alkoxy groups, carboxyl groups and alkoxycarbonyl groups. The alkyl group is preferably a lower alkyl group such as methyl group, ethyl group, propyl group, isopropyl group or butyl group, and more preferably represents a substituent selected from the group consisting of methyl group, ethyl group, propyl group and isopropyl group. As a substituent of a substituted alkyl group, a hydroxyl group, a halogen atom, and an alkoxy group are mentioned. As said alkoxy group, C1-C4 things, such as a methoxy group, an ethoxy group, a propoxy group, butoxy, are mentioned.

Hereinafter, although the detailed example of the monomer corresponding to the repeating structural unit represented by general formula (I) is shown, it is not limited to these.

Hereinafter, although the detailed example of the monomer corresponding to the repeating structural unit (it also contains general formula (IIA)) represented by general formula (II) is shown, it is not limited to these.

Moreover, when R <_1> is hydrogen in general formula (II), ie, when it contains the repeating structural unit represented by the said general formula (IIA), since line edge roughness improves, it is more preferable.

The acid-decomposable resin of (A) of the present invention may further contain a repeating unit represented by General Formula (III).

In formula (III), Z ₂ represents -O- or -N (R ₃ )-. Here, R ₃ represents a hydrogen atom, a hydroxyl group or -O-SO ₂ -R ₄ . R ₄ represents an alkyl group, haloalkyl group, cycloalkyl group or camphor residue.

As said alkyl group in said R <_4> , a C1-C10 linear or branched alkyl group is preferable, More preferably, it is a C1-C6 linear or branched alkyl group, More preferably, it is a methyl group, an ethyl group, and propyl. Group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, t-butyl group.

Examples of the haloalkyl group in R ₄ include trifluoromethyl group, nanofluorobutyl group, pentadecafluorooctyl group and trichloromethyl group.

As said cycloalkyl group in said R <_4> , a cyclopentyl group, a cyclohexyl group, a cyclooctyl group, etc. are mentioned.

Hereinafter, although the specific example of the monomer corresponding to the repeating structural unit represented by General formula (III) is shown, it is not limited to these.

The acid-decomposable resin (A) is a component other than the above-mentioned repeating structural unit for the purpose of controlling dry etching resistance, standard developer suitability, substrate adhesion, resist profile, and resolution, heat resistance, sensitivity, etc. which are generally necessary characteristics of the resist. It may contain repeating structural units.

Although the repeating structural unit corresponding to the following monomer is mentioned as such a repeating structural unit, It is not limited to these.

This leads to properties required for acid-decomposable resins, in particular

(1) solubility in coating solvents,

(2) film forming property (glass transition point),

(3) alkali developability,

(4) membrane loss (select hydrophilic, alkali-soluble group),

(5) adhesion to the unexposed portion of the substrate,

(6) It becomes possible to adjust dry etching resistance to a minute part.

As such a monomer, for example, one addition polymerizable unsaturated bond selected from acrylic acid esters, methacrylic acid esters, acrylamides, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, etc. The compound etc. which are held are mentioned.

In detail, the following monomers are mentioned.

Acrylic esters (preferably alkyl acrylate whose C1-C10 alkyl group):

Methyl acrylate, ethyl acrylate, propyl acrylate, amyl acrylate, cyclohexyl acrylate, ethyl hexyl acrylate, octyl acrylate, t-octyl acrylate, crawlethyl acrylate, 2-hydroxyethyl acrylate, 2,2-dimethylhydroxy Propyl acrylate, 5-hydroxypentyl acrylate, trimetholol propane monoacrylate, pentaerythritol monoacrylate, benzyl acrylate, methoxybenzyl acrylate, perfuryl acrylate, tetrahydroperfuryl acrylate, etc. .

Methacrylic acid esters (preferably alkyl methacrylate whose alkyl group has 1 to 10 carbon atoms):

Methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, amyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, crawlbenzyl methacrylate, octyl methacrylate Acrylate, 2-hydroxyethyl methacrylate, 4-hydroxybutyl methacrylate, 5-hydroxypentyl methacrylate, 2,2-dimethyl-3-hydroxypropyl methacrylate, trimetholpropane mono Methacrylate, pentaerythritol monomethacrylate, perfuryl methacrylate, tetrahydrofurfuryl methacrylate and the like.

Acrylamides:

Acrylamide, N-alkylacrylamide, (The alkyl group having 1 to 10 carbon atoms, for example, methyl group, ethyl group, propyl group, butyl group, t-butyl, heptyl group, octyl group, cyclohexyl group, hydroxy N, N-dialkylacrylamide (The alkyl group includes 1-10 carbon atoms, for example, methyl group, ethyl group, butyl group, isobutyl group, ethylhexyl group, cyclohexyl group, etc.) N-hydroxyethyl-N-methylacrylamide, N-2-acetamideethyl-N-acetylacrylamide, and the like.

Methacrylamides:

Methacrylamide, N-alkyl methacrylamide (as alkyl groups having 1 to 10 carbon atoms, for example, methyl group, ethyl group, t-butyl group, ethylhexyl group, hydroxyethyl group, cyclohexyl group, etc.), N, N-dialkyl methacrylamide (alkyl groups include ethyl group, propyl group, butyl group, etc.), N-hydroxyethyl-N-methylmethacrylamide, and the like.

Allyl Compounds:

Allyl esters (for example, allyl acetate, allyl capronate, allyl caprylic acid, allyl laurate, allyl palmitate, allyl stearate, allyl benzoate, allyl acetic acid, allyl lactate, etc.), allyloxyethanol, and the like.

Vinyl ethers:

Alkyl vinyl ether (for example, hexyl vinyl ether, octyl vinyl ether, decyl vinyl ether, ethyl hexyl vinyl ether, methoxy ethyl vinyl ether, ethoxy ethyl vinyl ether, crawl ethyl vinyl ether, 1-methyl-2,2- Dimethylpropyl vinyl ether, 2-ethylbutyl vinyl ether, hydroxyethyl vinyl ether, diethylene glycol vinyl ether, dimethylaminoethyl vinyl ether, diethylaminoethyl vinyl ether, butylaminoethyl vinyl ether, benzyl vinyl ether, tetrahydroper Furyl vinyl ether and the like.

Vinyl esters:

Vinyl butyrate, vinyl isobutyrate, vinyl trimethyl acetate, vinyl diethyl acetate, vinyl barrate, vinyl caproate, vinyl crawl acetate, vinyl dicro acetate, vinyl methoxy acetate, vinyl butoxy acetate, vinyl acetate acetate, vinyl lactate , Vinyl-β-phenylbutyrate, vinylcyclohexylcarboxylate and the like.

Itaconic acid dialkyls:

Dimethyl itaconate, diethyl itaconate, dibutyl itaconate, and the like.

Dialkyl esters or monoalkyl esters of fumaric acid, dibutyl fumarate and the like.

Other crotonic acid, itaconic acid, acrylonitrile, methacrylonitrile, maleylonitrile and the like.

In addition, as long as it is an addition-polymerizable unsaturated compound copolymerizable with the monomer corresponding to the said various repeating structural unit, you may copolymerize.

Among the above, as the other copolymerization component, allyl ester and fumaric acid ester are preferable in that the line edge roughness is further improved.

In the present invention, the content of the repeating structural unit represented by the general formula (II) in the acid-decomposable resin is preferably 2 to 50 mol%, more preferably 5 to 50 mol%, even more of the total repeating structural units. Although it is preferably 4 to 45 mol%, in view of defocusing latitude, particularly preferable is 5 to 30 mol%, more preferably 15 to 25 mol%, most preferably 15 to 20 mol%.

In the present invention, the content of the repeating structural unit represented by the general formula (IIA) in the acid-decomposable resin is preferably 5 to 50 mol%, more preferably 10 to 40 mol% in all the repeating structural units. More preferably, it is 15-30 mol%.

In the present invention, the content of the repeating structural unit represented by the general formula (II) or the general formula (IIA) in the acid-decomposable resin can be controlled mainly by the introduction amount of the corresponding monomer, but polymerization reaction conditions, that is, reaction temperature , Reaction time, type and amount of radical initiator, type of reaction solvent, corresponding concentration, and the like. Moreover, it changes also with the solvent used at the reprecipitation process at the time of extracting resin, and usage-amount.

In acid-decomposable resins, the molar ratio of each other repeating structural unit is set appropriately to control dry etching resistance of resist, standard developer suitability, substrate adhesion, resist profile, and resolution, heat resistance, sensitivity, etc. which are general necessary characteristics of resist. do.

As for content of the repeating structural unit represented by general formula (I) in acid-decomposable resin, 25-70 mol% is preferable in all the repeating structural units, More preferably, it is 28-65 mol%, More preferably, it is 30- 60 mol%.

As for content in the case of including the repeating structural unit represented by General formula (III) in acid-decomposable resin, 20-80 mol% is preferable in all the repeating structural units, More preferably, it is 25-70 mol%, More Preferably it is 30-60 mol%.

Moreover, although content in resin of the repeating structural unit based on the monomer of the said other copolymerization component can also be set suitably according to the performance of a desired resist, it is generally a repeating structure represented by general formula (I) and (II) or (IIA). 99 mol% or less is preferable with respect to the total mole number which totaled the unit, More preferably, it is 90 mol% or less, More preferably, it is 80 mol% or less.

The molecular weight of the acid-decomposable resin is a weight average (Mw: polystyrene equivalent value by GPC method), preferably 1,000 to 1,000,000, more preferably 1,500 to 500,000, even more preferably 2,000 to 200,000, most preferably Is in the range of 2,500 to 100,000, and the larger the value, the higher the heat resistance and the like, while the developability and the like are lowered. Thus, the balance is adjusted to a more preferable range. The acid-decomposable resin used in the present invention can be synthesized by a general method (for example, radical polymerization).

In the positive photoresist composition of the present invention, the blending amount of the acid-decomposable resin in the entire resist composition is preferably 40 to 99.99% by weight in the total solid, more preferably 50 to 99.97% by weight.

Below, the preferable detailed example of what combined the repeating structural unit of acid-decomposable resin which is (A) component is shown.

[2] (B) A compound which generates an acid by irradiation of actinic light or radiation (photoacid generator)

The photoacid generator used in the present invention is a compound that generates an acid by irradiation with actinic light or radiation.

As a photo-acid generator used for this invention, well-known light (400-200 nm ultraviolet-ray, a raw material used for the photoinitiator of radical photopolymerization, the photoinitiator of radical photopolymerization, the photochromic agent of pigments, a photochromic agent, a microresist, etc.) is used. Ultraviolet rays, particularly preferably g-rays, h-rays, i-rays, KrF excimer laser light), ArF excimer laser light, electron beam, X-ray, molecular beam or ion beam, and a mixture thereof. Can be.

In addition, other photoacid generators used in the present invention include onium salts such as diazonium salts, ammonium salts, phosphonium salts, iodonium salts, sulfonium salts, selenium salts, and arzonium salts, organic halogen compounds, and organic metals. Photo-decomposed compound generating sulfonic acid, such as organic halides, photoacid generators having o-nitrobenzyl-type protecting groups, iminosulfonates, disulfone compounds, diazoketo sulfones, diazodisulfone compounds, and the like. have.

Moreover, the group which generate | occur | produces an acid by these lights, or the compound which introduce | transduced the compound into the main chain or side chain of a polymer can be used.

And VNR Pillai, Synthesis , (1), 1 (1980), A. Abad et al., Tetrahedron Lett. , (47) 4555 (1971), DHR Barton et al., J. Chem. Soc. (C), 329 (1970), U.S. Patent No. 3,779,778, European Patent No. 126,712 and the like can be used a compound capable of generating an acid by light.

Among the compounds generating the above-mentioned acids, those which are used particularly effectively will be described below.

(1) An oxazole derivative represented by the following general formula (PAG1) substituted with a trihalomethyl group or an S-triazine derivative represented by the general formula (PAG2).

In the formula, R ²⁰¹ represents a substituted or unsubstituted allyl group, alkenyl group, and R ²⁰² represents a substituted or unsubstituted allyl group, alkenyl group, alkyl group, -C (Y) ₃ . Y represents a chlorine atom or a bromine atom.

Although the following compounds are mentioned in detail, it is not limited to these.

(2) Iodonium salt represented by the following general formula (PAG3), or sulfonium salt represented by general formula (PAG4).

Here, formulas Ar ¹ and Ar ² each independently represent a substituted or unsubstituted allyl group.

R ²⁰³ , R ²⁰⁴ and R ²⁰⁵ each independently represent a substituted or unsubstituted alkyl group and allyl group.

Z ^- is an anion pair to indicate, for example, _{^{BF 4 -, AsF 6 -,}} PF 6 -, SbF 6 -, SiF 6 2-, ClO 4 -, CF 3 SO 3 - alkanoic acid anions, such as perfluoroalkyl, Condensed polynuclear aromatic sulfonic acid anions, anthraquinone sulfonic acid anions, sulfonic acid group-containing dyes and the like, such as pentafluorobenzene sulfonic acid anion and naphthalene-1-sulfonic acid anion, may be mentioned, but is not limited thereto.

In addition, two of R ²⁰³ , R ²⁰⁴ and R ²⁰⁵ and Ar ¹ and Ar ² may be bonded to each other via a single bond or a substituent.

Although the compound shown below is mentioned in detail, it is not limited to this.

In the above structural formula, Ph represents a phenyl group.

The onium salts represented by the formulas (PAG3) and (PAG4) are known, and can be synthesized by the methods described in, for example, US Pat. Nos. 2,807,648 and 4,247,473, and Japanese Patent Application Publication No. 53-101,331. Can be.

(3) The disulfone derivative represented by the following general formula (PAG5) or the iminosulfonate derivative represented by the general formula (PAG6).

In the formula, Ar ³ and Ar ⁴ each independently represent a substituted or unsubstituted allyl group. R ²⁰⁶ represents a substituted or unsubstituted alkyl group, allyl group. A represents a substituted or unsubstituted alkylene group, alkenylene group, allylene group.

Although the compound shown below is a detailed example, it is not limited only to this example.

(4) Diazodisulfone derivative represented by the following general formula (PAG7).

(R represents a linear, branched or cyclic alkyl group or an allyl group which may be substituted.)

Although the compound shown below is mentioned in detail, it is not limited to these.

The addition amount of such a photo-acid generator is generally used in 0.01-30 weight% based on solid content in a composition, Preferably it is 0.3-20 weight%, More preferably, it is used in the range of 0.5-10 weight%. do.

If the amount of the photoacid generator is less than 0.01% by weight, the sensitivity tends to be lowered. If the amount of the photoacid generator is more than 30% by weight, the light absorption of the resist is too high, resulting in deterioration of the profile or narrowing of the process (especially baking) margin. Not desirable

In the present invention, it is preferable to contain at least one member selected from the compound represented by the general formula (APG6 ') and the compound represented by the general formula (PAG7') as the photoacid generator in terms of improving the line edge roughness. Do.

In the above general formula (PAG6 '), R ⁶⁰ which may have a substituent may have an alkyl group (preferably having 1 to 18 carbon atoms, specifically, for example _{CF 3, C 4 F 9,} C 8 F 17, ethyl ) Or an allyl group (preferably having 6 to 14 carbon atoms, for example, a phenyl group, a naphthyl group, etc.) which may have a substituent.

A ⁶⁰ is an alkylene group (preferably having 2 to 10 carbon atoms), a cyclic alkylene group (preferably having 6 to 14 carbon atoms), an alkenylene group (preferably having 2 to 10 carbon atoms), or a cyclic egg which may have a substituent A kenylene group (preferably C6-C14) or an allylene group (preferably C6-C14) is represented. Here, a cyclohexane residue group, a norbornene residue group etc. are mentioned as a cyclic alkylene group, A cyclohexene residue group, a norbornene residue etc. are mentioned as a cyclic alkenylene group.

Preferred such other substituents include alkoxy groups having 1 to 4 carbon atoms, halogen atoms (fluorine atoms, chlorine atoms and iodine atoms), allyl groups having 6 to 10 carbon atoms, alkenyl groups having 2 to 6 carbon atoms, cyano groups, hydroxyl groups and carboxyl groups. And a C2-C5 alkoxycarbonyl group, nitro group, camphor residue, etc. are mentioned. In addition, among the substituents, those having a cyclic structure may include oxygen atoms or the like instead of the carbon atoms constituting the ring.

In said general formula (PAG7 '), R <^70> is respectively respectively a linear, branched or cyclic alkyl group which may be substituted (preferably C2-C10), or the allyl group which may be substituted (preferably C6-C14) ). Examples of the substituent that can be retained include an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, a halogen atom, and the like, and in particular, a methyl group, t-butyl group, methoxy group, bromine atom, chlorine atom, and the like. have. Each of the plurality of R ⁷⁰ in formula (PAG7 ′) may be the same or different.

The addition amount of the iminosulfonate-based photoacid generator (PAG6 ') or diazodisulfone-based photoacid generator (PAG7') is preferably used in the range of 0.001 to 20% by weight based on the solids in the composition. More preferably, it is used in 0.01 to 15 weight%, More preferably, it is 0.1 to 10 weight% of range. When the addition amount is less than 0.001% by weight, the effect of improving the line edge roughness tends to be lowered, and when the addition amount is more than 20% by weight, the light absorption of the resist is excessively increased, so that the profile is deteriorated or the process margin (especially baking), The exposure margin tends to be narrowed.

In addition to the iminosulfonate-based or diazodisulfone-based photoacid generators (PAG6 ') and (PAG7'), it is preferable to further use a sulfonium salt compound-based photoacid generator. By using in this way, line edge roughness improves further and resolution is also excellent.

As a sulfonium salt compound which can be used together, the compound etc. which are represented by said formula (PAG4) are mentioned.

In this case, the sulfonium salt compound is preferably used in the range of 0.1 to 10% by weight, more preferably 0.5 to 6% by weight based on the solid content of the composition of the present invention.

In the present invention, in the case where the photoacid generator (PAG6 ') or (PAG7') is used, the other photoacid generators of the above (PAG4) may be used in combination.

When the photoacid generator (PAG6 ') or (PAG7') is used in the present invention, the amount of other photoacid generators that can be used together is generally 100 parts by weight based on (PAG6 ') or (PAG7'). To 1000 parts by weight or less, preferably 700 parts by weight or less, and more preferably 500 parts by weight or less.

In addition, in the present invention, it is particularly preferable to use at least one of the compounds represented by the general formulas (I ') to (III') as the photoacid generator to improve the exposure margin.

In general formula (I ')-(III'), as a linear and branched alkyl group of R <_51> -R <_88> , a methyl group, an ethyl group, a propyl group, n-butyl group, and sec-butyl which may have a substituent The C1-C4 thing like group and t-butyl group is mentioned. Examples of the cyclic alkyl group include those having 3 to 8 carbon atoms such as a cyclopropyl group, a cyclopentyl group and a cyclohexyl group which may have a substituent.

As a linear, branched alkoxy group of R ₅₁ to R ₈₇ , for example, a methoxy group, an ethoxy group, a hydroxyethoxy group, a propoxy group, n-butoxy group, isobutoxy group, sec-butoxy group, t- The C1-C4 thing like the butoxy group is mentioned.

As a cyclic alkoxy group, a cyclopentyloxy group and a cyclohexyloxy group are mentioned, for example.

_Examples of the halogen atom for R ₅₁ to R ₈₇ include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

As an allyl group of R <_88>, the C6-C14 thing which may have substituents, such as a phenyl group, a toryl group, a methoxyphenyl group, and a naphthyl group, is mentioned, for example.

Preferred examples of such a substituent include an alkoxy group having 1 to 4 carbon atoms, a halogen atom (fluorine atom, a chlorine atom and an iodine atom), an allyl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, a cyano group, a hydroxyl group, a carboxyl group, Alkoxycarbonyl group, a nitro group, etc. are mentioned.

In _{addition, R 51 ~ R 65, R} 66 ~ R 77, R 78 ~ R 87 wherein is formed by combining two or more single bond, carbon, oxygen, sulfur, and one kind selected from nitrogen or in combination of two or more As a ring containing, a furan ring, a dihydrofuran ring, a pyran ring, a trihydropyran ring, a thiophene ring, a pyrrole ring, etc. are mentioned, for example.

In the general formula (I ') ~ (III' ), X - is R ^F SO ₃ ^- as the anion represented by the following, in which R ^F is a carbon number of 2 or more, preferably having a carbon number of 2 to 2 to 10 carbon atoms, more preferably It is -8, More preferably, it is a C2-C5 fluorine substituted linear, branched or cyclic alkyl group.

Preferred R ^F is represented by CF ₃ (CF ₂ ) y, wherein y is an fluorine-substituted linear alkyl group having an integer of 1 to 15, more preferably y is an integer of 1 to 9, and even more preferably y is 1 It is a fluorine-substituted linear alkyl group which is an integer of -5. By using such a fluorine-substituted linear alkyl group [CF ₃ (CF ₂ ) y], the balance between sensitivity and resolution is excellent, and the performance change is small even with the passage of time from exposure to post-heating.

As R ^F , CF ₃ CF _2- , CF ₃ (CF ₂ ) _2- , CF ₃ (CF ₂ ) _3- , CF ₃ (CF ₂ ) _4- , CF ₃ (CF ₂ ) _5- , CF ₃ (CF ₂ ) _7- , CF ₃ (CF ₂ ) _9- , CF ₃ (CF ₂ ) _11- , CF ₃ (CF ₂ ) _13- , CF ₃ (CF ₂ ) _15- , preferably CF ₃ CF _2- , CF ₃ (CF ₂ ) _2- , CF ₃ (CF ₂ ) _3- , CF ₃ (CF ₂ ) _4- , CF ₃ (CF ₂ ) _5- , CF ₃ (CF ₂ ) _7- , CF ₃ (CF ₂ ) _9- , more preferably CF ₃ CF _2- , CF ₃ (CF ₂ ) _2- , CF ₃ (CF ₂ ) _3- , CF ₃ (CF ₂ ) _4- , CF ₃ (CF ₂ ) _5- . Especially preferred is CF ₃ (CF ₂ ) ₃ −.

The formula (I ') ~ (III' ) The especially preferred photo-acid generator a compound represented by is represented by the general formula (I '), Further X ^- is _{CF 3 (CF 2) 3 SO} 3 - are those compounds .

By using the compound represented by general formulas (I ') to (III') composed of sulfonic anions having an alkyl group with a fluorine-substituted alkyl group as a photoacid generator, and in combination with the resin component (A) of the specific structure The positive resist composition of the present invention has sufficient sensitivity and resolution for exposure to far ultraviolet rays, in particular ArF excimer laser light (wavelength 193 nm), and is excellent in the effect of improving the exposure margin.

As a detailed example of the photo-acid generator represented by general formula (I ')-(III'), the following compound (I-1)-(I-32), (II-1)-(II-11), (III- 1)-(III-22) is mentioned.

The amount of the photoacid generator (B) represented by the general formulas (I ') to (III') is generally used in the range of 0.001 to 20% by weight, based on the solid content in the composition, preferably 0.01 to 15 weight%, More preferably, it is used in the range of 0.1-10 weight%. If the amount of the photoacid generator is less than 0.001% by weight, the sensitivity is lowered. If the amount of the photoacid generator is more than 20% by weight, the light absorption of the resist becomes excessively high, so that the profile is deteriorated or the process (especially baking) margin is not preferable. .

Moreover, when the photoacid generator represented by said general formula (I ')-(III') is used in this invention, the addition amount of the photoacid generator which can be used together is the said general formula (I ')-(III'). It is generally 1000 parts by weight or less, preferably 700 parts by weight or less, and more preferably 500 parts by weight or less with respect to 100 parts by weight of the photoacid generator.

[3] (D) organic basic compounds

Preferred (D) organic basic compounds which can be used in the present invention are compounds which are more basic than phenol. Of these, nitrogen-containing basic compounds are preferred.

By adding the (D) organic basic compound, sensitivity fluctuations over time are improved.

(D) As an organic basic compound, there exists a compound which has a structure shown below.

Where R²⁵⁰, R²⁵¹And R²⁵²Are each independently an alkyl group having 1 to 6 carbon atoms, an aminoalkyl group having 1 to 6 carbon atoms, a hydroxyalkyl group having 1 to 6 carbon atoms or a substituted or unsubstituted allyl group having 6 to 20 carbon atoms, wherein R²⁵¹And R²⁵²May combine with each other to form a ring.

(Wherein, R ²⁵³ , R ²⁵⁴ , R ²⁵⁵ and R ²⁵⁶ each independently represent an alkyl group having 1 to 6 carbon atoms.)

More preferable compounds are nitrogen-containing basic compounds having two or more nitrogen atoms having different chemical environments in one molecule, and particularly preferred are compounds or alkyls containing both substituted or unsubstituted amino and nitrogen atoms. A compound having an amino group. Preferred detailed examples include substituted or unsubstituted guanidine, substituted or unsubstituted aminopyridine, substituted or unsubstituted aminoalkylpyridine, substituted or unsubstituted aminopyrrolidine, substituted or unsubstituted imidazole, substituted or unsubstituted Substituted pyrazole, substituted or unsubstituted pyrazine, substituted or unsubstituted pyrimidine, substituted or unsubstituted purine, substituted or unsubstituted imidazoline, substituted or unsubstituted pyrazoline, substituted or unsubstituted pipepe Razine, substituted or unsubstituted aminomorpholine, substituted or unsubstituted aminoalkylmorpholine, and the like. Preferable substituents are amino group, aminoalkyl group, alkylamino group, aminoallyl group, allylamino group, alkyl group, alkoxy group, acyl group, acyloxy group, allyl group, allyloxy group, nitro group, hydroxyl group and cyano group.

Preferred examples of the nitrogen-containing basic compound include, specifically, guanidine, 1,1-dimethylguanidine, 1,1,3,3-tetramethylguanidine, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine, 2-dimethyl Aminopyridine, 4-dimethylaminopyridine, 2-diethylaminopyridine, 2- (aminomethyl) pyridine, 2-amino-3-methylpyridine, 2-amino-4-methylpyridine, 2-amino-5-methylpyridine , 2-amino-6-methylpyridine, 3-aminoethylpyridine, 4-aminoethylpyridine, 3-aminopyrrolidine, piperazine, N- (2-aminoethyl) piperazine, N- (2-aminoethyl Piperidine, 4-amino-2,2,6,6-tetramethylpiperidine, 4-piperidinopiperidine, 2-iminopiperidine, 1- (2-aminoethyl) -pyrroli Dean, pyrazole, 3-amino-5-methylpyrazole, 5-amino-3-methyl-1-p-tolylpyrazole, pyrazine, 2- (aminomethyl) -5-methylpyrazine, pyrimidine, 2, 4-diaminopyrimidine, 4,6-dihydroxypyrimidine, 2-pyrazoline, 3-pyrazoline, N-aminomorpholine, N- (2-aminoethyl) morpholine, 1,5-diazabicyclo [4.3.0] nona-5-ene, 1,8-diazabicyclo [5.4. 0] Undeca-7-ene, 1,4-diazabicyclo [2.2.2] octane, 2,4,5-triphenylimidazole, N-methylmorpholine, N-ethylmorpholine, N-hydride Tertiary morpholine derivatives such as oxyethylmorpholine, N-benzylmorpholine, cyclohexylmorpholinoethylthiourea (CHMETU), and the inhibited amines described in Japanese Patent Application Laid-Open No. 11-52575 (for example, And the like described in the above publication, but are not limited to these.

Particularly preferred among the above examples are 1,5-diazabicyclo [4.3.0] -5-nonene, 1,8-diazabicyclo [5.4.0] -7-undecene, 1,4-diazabicyclo [ 3.2.2] tertiary such as octane, 4-dimethylaminopyridine, hexanemethylenetetramine, 4,4-dimethylimidazoline, pyrroles, pyrazoles, imidazoles, pyridazines, pyrimidines and CHMETU Suppressed amines, such as morpholines and bis (1,2,2,6,6-pentamethyl-4- piperidyl) sebacate, etc. are mentioned.

Among these, 1, 5- diazabicyclo [4.3.0] nona-5-ene and 1, 8- diazabicyclo [5. 4.0] underca-7-ene, 1,4-diazabicyclo [2.2.2] octane, 4-dimethylaminopyridine, hexamethylenetetramine, CHMETU, bis (1,2,2,6,6-pentamethyl 4-piperidyl) sebacate is preferred.

These organic basic compounds are used individually or in combination of 2 or more. The amount of the organic basic compound to be used is generally 0.001 to 10% by weight, preferably 0.01 to 5% by weight based on the solids of the entire composition of the photosensitive resin composition. If it is less than 0.001 weight%, the addition effect of the said organic basic compound is not acquired.

On the other hand, when it exceeds 10 weight%, there exists a tendency for the fall of a sensitivity and the developability of a non-exposed part to deteriorate.

[4] (E) fluorine-based and / or silicone-based surfactants

The positive photoresist composition of the present invention preferably contains a fluorine-based and / or silicon-based surfactant.

In the positive photoresist composition of the present invention, it is preferable that any one of fluorine-based surfactants, silicone-based surfactants, and surfactants containing both fluorine and silicon atoms contains two or more kinds.

When the positive photoresist composition of the present invention contains the acid-decomposable resin and the surfactant, the roughness dependency is improved.

As such a surfactant, for example, Japanese Patent Laid-Open Nos. 62-36663, 61-226746, 61-226745, 62-170950, 63-34540, and Japanese Patent Laid-Open No. 7-230165 , 8-62834, 9-54432, 9-5988, US 5405720, 5360692, 5529881, 5296330, 5436098, 5576143, 5294511, 5824451 Although the surfactant described in the head is mentioned, The following commercially available surfactant can also be used as it is.

Commercially available surfactants that can be used include, for example, Eftop EF301 and EF303 (manufactured by Shin-Akita Kasei Co., Ltd.), Florad FC430 and 431 (manufactured by Sumimoto 3M Company), Megafac F171, F173, F176, F189, and R08 (Dainipone Ink) Fluorine-based surfactants or silicone-based surfactants such as &lt; RTI ID = 0.0 &gt; &lt; / RTI &gt; There is. In addition, polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) may also be used as the silicone surfactant.

The compounding quantity of surfactant is generally 0.01 weight%-2 weight%, Preferably it is 0.01 weight%-1 weight% based on solid content in the composition of this invention. Such surfactant may be added individually by 1 type, and may be added in combination of some.

As said other surfactant which can be used, polyoxyethylene alkyl ethers, such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene oleyl ether, and polyoxy are mentioned in detail. Polyoxyethylene alkylallyl ethers such as ethylene octyl phenol ether and polyoxyethylene nonyl phenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, Sorbitan fatty acid esters such as sorbitan monooleate, sorbitan trioleate, sorbitan tristearate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostea Latex, polyoxyethylene sorbitan triole And nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as ate and polyoxyethylene sorbitan tristearate.

The compounding quantity of such other surfactant is generally 2 parts by weight or less, preferably 1 part by weight or less per 100 parts by weight of solids in the composition of the present invention.

The positive photoresist composition of the present invention is propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether acetate, lactic acid alkyl esters such as methyl lactate and ethyl lactate, and propylene glycol mono Propylene glycol monoalkyl ethers such as methyl ether and propylene glycol monoethyl ether, ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate Ethylene glycol monoalkyl ether acetates, such as 2-heptanone, (gamma) -butyrolactone, methyl methoxy propionate, alkyl alkoxypropionates, such as ethyl ethoxypropionate, pyruvate, and pyrubin, such as ethyl pyruvate Acid alkyl esters, N-meth Is applied using a pyrrolidone, N, N- dimethylacetamide, dimethyl least one kind of solvent selected from sulfoxide, etc..

Preferred are propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, methyl lactate, and ethyl lactate. Although these solvents are used individually or in mixture, it is especially preferable to select and mix one or more solvents from propylene glycol monoalkyl ether acetates and lactic acid alkyl esters from the viewpoint of reducing the development defect. Here, the mixing ratio thereof is preferably 95/5 to 30/70 by weight ratio.

In this invention, it is preferable to melt | dissolve the solid content of the resist composition containing the said each component in the said solvent at solid content concentration, 3 to 25 weight%, More preferably, it is 5 to 22 weight%, More preferably, 7 20 wt%.

The positive photoresist composition of the present invention preferably contains the following (SI) mixed solvent.

As the (SI) component, at least one of the chain ketones (solvents of the A1 group), at least one of the alkyl lactates, alkyl alkoxypropionates, acetate esters and propylene glycol monoalkyl ethers (solvents of the B1 group) and / or γ- It is a mixed solvent containing at least 1 type (solvent of C1 group) of butyrolactone, ethylene carbonate, and propylene carbonate.

That is, as the (SI) component, there are those in which the A1 group solvent and the B1 group solvent are combined, the A1 group solvent and the C1 group solvent are combined, and the A1 group solvent, the B1 group solvent and the C1 group solvent are combined.

In the present invention, in addition to the component (A) and the component (B), a combination of the A1 group solvent and the B1 group solvent can be combined to reduce the development defect. In addition, it is possible to control the generation of particles when the resist composition solution is prepared by combining the A1 group solvent and the C1 group solvent, and the generation of particles due to the time lapse of the solution, that is, providing a resist liquid having excellent stability over time. can do. In addition, sensitivity fluctuations due to elapse of time can also be prevented. In addition, by combining the A1 group solvent, the B1 group solvent, and the C1 solvent, development defects can be reduced, excellent in stability over time, and small resist variations due to time can be provided.

As a chain ketone, Preferably, heptanone, octanone, etc. of 2-heptanone, 3-heptanone, 4-heptanone, etc. are mentioned, 2-heptanone is especially preferable.

Examples of the alkyl lactate include methyl lactate and ethyl lactate.

As alkyl alkoxypropionate, 3-ethoxy propionate, methyl 3-methoxy propionate, ethyl 3-methoxy propionate, and 3-ethoxy propionate are mentioned preferably.

Examples of the acetate esters include butyl acetate, pentyl acetate and hexyl acetate, more preferably butyl acetate.

As propylene glycol monoalkyl ether, propylene glycol monomethyl ether and propylene glycol monoethyl ether are mentioned preferably.

The amount of the A1 group solvent is generally 30% by weight or more, preferably 40% by weight or more, and more preferably 50% by weight or more with respect to the total solvent. If it is less than 30 weight%, coating property may deteriorate.

The amount of the B1 group solvent is generally 5 to 70% by weight, preferably 10 to 60% by weight, more preferably 15 to 50% by weight relative to the total solvent. If the amount of the B1 group solvent is less than the above range, the effect of addition is low, and if it exceeds 70% by weight, problems may arise such as deterioration of applicability.

The use weight ratio of the C1 group solvent is preferably 0.1 to 25% by weight, more preferably 1 to 20% by weight, still more preferably 3 to 15% by weight relative to the total solvent. If the amount of the C1 group solvent is less than the above range, the effect of addition may not be obtained, and if it exceeds 25% by weight, the storage stability may worsen.

Although it is especially preferable that the mixed solvent (SI) of this invention consists only of the said specific solvent, you may contain other solvent in the range which does not prevent the effect of this invention. The other solvent is generally 20% by weight or less, preferably 10% by weight or less in the mixed solvent. As other solvents, propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate and propylene glycol monoethyl ether acetate described above as a coating solvent, propylene glycol monoalkyl ether carboxylates, ethylene glycol monomethyl ether and ethylene Ethylene glycol monoalkyl ethers such as glycol monoethyl ether, ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, pyruvic acid such as methyl pyruvate and ethyl pyruvate Alkyl esters, N-methylpyrrolidone, N, N-dimethylacetamide, dimethyl sulfoxide and the like.

In this invention, it is preferable to melt | dissolve 3-25 weight% of solid content of the resist composition containing the said each component in the said mixed solvent at solid content concentration, More preferably, it is 5 to 22 weight%, More preferably, 7 to 20% by weight.

Preferred combinations of the mixed solvent (SI) in the present invention include 2-heptanone + propylene glycol monomethyl ether, 2-heptanone + ethyl lactate, 2-heptanone + ethoxypropionate, 2-heptanone + γ- Butyrolactone, 2-heptanone + ethylene carbonate, 2-heptanone + propylene carbonate, 2-heptanone + propylene glycol monomethyl ether + γ-butyrolactone, 2-heptanone + ethyl lactate + γ-butyrolactone , 2-heptanone + 3-ethoxypropionate + γ-butyrolactone, 2-heptanone + propylene glycol monomethyl ether + ethylene carbonate, 2-heptanone + ethyl lactate + ethylene carbonate, 2-heptanone + 3 Ethyl ethoxypropionate + ethylene carbonate, 2-heptanone + propylene glycol monomethyl ether + propylene carbonate, 2-heptanone + ethyl lactate + propylene carbonate, 2-heptanone + 3-ethoxypropionate + propylene carbonate, 2 -Heptanone + butyl acetate, 2-heptanone + Butyl acetate + γ-butyrolactone, 2-heptanone + butyl acetate + ethylene carbonate, 2-heptanone + butyl acetate + propylene carbonate.

More preferably, 2-heptanone + propylene glycol monomethyl ether + γ-butyrolactone, 2-heptanone + ethyl lactate + γ-butyrolactone, 2-heptanone + 3-ethoxypropionate + γ-buty Lolactone, 2-heptanone + propylene glycol monomethyl ether + ethylene carbonate, 2-heptanone + ethyl lactate + ethylene carbonate, 2-heptanone + 3-ethoxypropionate + ethylene carbonate, 2-heptanone + propylene glycol Monomethyl ether + propylene carbonate, 2-heptanone + ethyl lactate + propylene carbonate, 2-heptanone + 3-ethoxypropionate + propylene carbonate, 2-heptanone + butyl acetate + γ-butyrolactone, 2-hep Tanone + butyl acetate + ethylene carbonate, 2-heptanone + butyl acetate + propylene carbonate.

The positive photoresist composition of the present invention may preferably contain a (SII) mixed solvent.

As a (SII) component, 1 or more types of propylene glycol monoalkyl ether carbonates (referred to as A2 group solvent), and 1 or more types of propylene glycol monoalkyl ethers, lactic acid alkyl, acetate ester, chain ketone, and alkoxypropionate (B2) Group solvent) and / or γ-butyrolactone, ethylene carbonate and propylene carbonate (referred to as C2 group solvent).

That is, as a (SII) component, what combined A2 group solvent and B2 group solvent, what combined A group solvent and C group solvent, what combined A2 group solvent, B2 group solvent, and C2 group solvent is mentioned. have.

In particular, by using a combination of the A2 group solvent and the B2 group solvent, the development defect can be further reduced. When the A2 group solvent and the C2 group solvent are combined, the time-lapse stability of the resist liquid is particularly excellent, and the sensitivity change due to the time-lapse can be particularly prevented. When a combination of A2 group solvent, B2 group solvent and C2 group solvent is used, in particular, development defects can be further reduced, and the resist liquid over time will be more stable, and sensitivity fluctuations due to time will be particularly prevented. Can be.

As propylene glycol monoalkyl ether carboxylate, a propylene glycol monomethyl ether acetate, a propylene glycol monomethyl ether propionate, a propylene glycol monoethyl ether acetate, and propylene glycol monoethyl ether propionate are mentioned preferably.

As propylene glycol monoalkyl ether, propylene glycol monomethyl ether and propylene glycol monoethyl ether are mentioned preferably.

Examples of the alkyl lactate include methyl lactate and ethyl lactate.

Preferred examples of the acetate ester solvent include butyl acetate, pentyl acetate, and hexyl acetate, and more preferably butyl acetate.

The chain ketone includes heptanone, and the heptanone includes 2-heptanone, 3-heptanone, and 4-heptanone, and 2-heptanone is preferable.

As alkyl alkoxypropionate, 3-ethoxy propionate, methyl 3-methoxy propionate, ethyl 3-methoxy propionate, and 3-ethoxy propionate are mentioned preferably.

As for the use weight ratio (A2: B2) of the said A2 group solvent and B2 group solvent, 90: 10-15: 85 are preferable, More preferably, it is 85: 15-20: 80, Most preferably, 80:20 25:75.

The use weight ratio (A2: C2) of the solvent of the A2 group and the C2 group solvent is preferably 99.9: 0.1 to 75:25, more preferably 99: 1 to 80:20, and most preferably 97: 3 ˜85: 15.

When combining these three solvents, the use weight ratio of the C2 group solvent is preferably 0.1 to 25% by weight, more preferably 1 to 20% by weight, most preferably 3 to 17% by weight relative to the total solvent. to be.

In this invention, it is preferable to melt | dissolve 3-25 weight% of solid content of the resist containing each said component in the said mixed solvent at solid content concentration, More preferably, it is 5-22 weight%, Most preferably, 7-20 Weight percent.

As a preferable combination of the mixed solvent (SII) containing a propylene glycol monoalkyl ether carboxylate in this invention,

Propylene Glycol Monomethyl Ether Acetate + Propylene Glycol Monomethyl Ether

Propylene Glycol Monomethyl Ether Acetate + Ethyl Lactic Acid

Propylene Glycol Monomethyl Ether Acetate + 3-Ethoxy Propionate

Propylene Glycol Monomethyl Ether Acetate + γ-butyrolactone

Propylene Glycol Monomethyl Ether Acetate + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Propylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Propylene Glycol Monomethyl Ether + γ-Butyrolactone

Propylene Glycol Monomethyl Ether Acetate + Ethyl Lactic Acid + γ-Butyrolactone

Propylene Glycol Monomethyl Ether Acetate + 3-Ethoxy Propionate + γ-Butyrolactone

Propylene Glycol Monomethyl Ether Acetate + Propylene Glycol Monomethyl Ether + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Ethyl Lactic Acid + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + 3-Ethoxy Propionate + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Propylene Glycol Monomethyl Ether + Propylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Ethyl Lactic Acid + Propylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + 3-Ethoxy Propionate + Propylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Butyl Acetate

Propylene Glycol Monomethyl Ether Acetate + 2-heptanone

Propylene Glycol Monomethyl Ether Acetate + Butyl Acetate + γ-Butyrolactone

Propylene Glycol Monomethyl Ether Acetate + 2-heptanone + γ-butyrolactone

Propylene Glycol Monomethyl Ether Acetate + Butyl Acetate + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + 2-heptanone + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Butyl Acetate + Propylene Carbonate

Propylene glycol monomethyl ether acetate + heptanone + propylene carbonate.

As a particularly preferable combination of a solvent (SII),

Propylene Glycol Monomethyl Ether Acetate + Propylene Glycol Monomethyl Ether + γ-Butyrolactone

Propylene Glycol Monomethyl Ether Acetate + Ethyl Lactic Acid + γ-Butyrolactone

Propylene Glycol Monomethyl Ether Acetate + 3-Ethoxy Propionate + γ-Butyrolactone

Propylene Glycol Monomethyl Ether Acetate + Propylene Glycol Monomethyl Ether + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Ethyl Lactic Acid + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + 3-Ethoxy Propionate + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Propylene Glycol Monomethyl Ether + Propylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Ethyl Lactic Acid + Propylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + 3-Ethoxy Propionate + Propylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Butyl Acetate + γ-Butyrolactone

Propylene Glycol Monomethyl Ether Acetate + 2-heptanone + γ-butyrolactone

Propylene Glycol Monomethyl Ether Acetate + Butyl Acetate + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + 2-heptanone + Ethylene Carbonate

Propylene Glycol Monomethyl Ether Acetate + Butyl Acetate + Propylene Carbonate

Propylene glycol monomethyl ether acetate + 2-heptanone + propylene carbonate.

The positive photoresist composition of the present invention may contain an acid decomposable dissolution inhibiting compound, a dye, a plasticizer, a photosensitizer, a compound for promoting solubility in a developer, and the like, as necessary.

In particular, in the positive photoresist composition of the present invention, in addition to the resin and the photoacid generator, a compound represented by the general formula (CI) or (CII) or a polycyclic structure represented by the general formula (CIII) It is preferable to contain the compound which has 2 or more of structures which have at least some substituents containing the carboxylic acid group protected by the acid labile group as a dissolution inhibitor.

In general formula (CI), X represents an oxygen atom, a sulfur atom, -N ( _R53 )-, or a single bond.

In R ₅₁ , R ₅₂ , and R ₅₃ of the general formula (CI), the alkyl group is methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, or t- The C1-C8 thing like a butyl group, a hexyl group, 2-ethylhexyl group, and an octyl group is mentioned.

In general formula (CI), -C (= O) -O-R 'is a group (referred to as an acid-decomposable group) decomposed by the action of an acid.

Here, R 'may be a tertiary alkyl group such as t-butyl group, methoxy t-butyl group, t-amyl group (preferably having 4 to 20 carbon atoms), isobornyl group and substituent. 1-alkoxyethyl groups (preferably carbon number) such as ethoxyethyl group, 1-butoxyethyl group, 1-isobutoxyethyl group, 1-cyclohexyloxyethyl group, and 1- [2- (n-butoxy) ethoxy] ethyl group 2-10), an alkoxymethyl group (preferably C2-10), such as 1-methoxymethyl group and 1-ethoxymethyl group, which may have a substituent, tetrahydropyranyl group which may have a substituent, a substituent Trialkylsilyl groups (preferably having 3 to 20 carbon atoms), 3-oxocyclohexyl group, such as tetrahydrofuranyl group, trimethylsilyl group, t-butyldimethylsilyl group and diisopropylmethylsilyl group which may be possessed Can be.

The tertiary alkyl group of R 'may form an alicyclic ring. Preferred substituents which an alkoxy methyl group and an alkoxyethyl group of R 'may possess include a halogen atom,-(OCH ₂ CH ₂ ) ₂ OCH ₃ , -S (CH ₂ ) ₂ CH ₃ , -SC (CH ₃ ) ₃ , -O-additional, -O-CO-additional. As a preferable substituent which a tetrahydro pyranyl group and a tetrahydrofuranyl group can hold, a carbonyl group and a C1-C5 alkyl group are mentioned.

R represents an n 1 -valent moiety including a bridged hydrocarbon, a saturated cyclic hydrocarbon or a naphthalene ring. Examples of the n 1 -valent moiety containing the bridged hydrocarbon include admantan, norbornane, tricyclodecane, tetracycloundecane, pinene and the like having n 1 binding sites. Examples of the n monovalent moiety containing a saturated cyclic hydrocarbon include terpene and steroid. As the n 1 -valent moiety including the naphthalene ring, there is a naphthalene ring having n 1 binding sites.

Conjugated hydrocarbons, saturated cyclic hydrocarbons, or naphthalenes exemplified above may have a substituent in a place other than a bonding site. As a preferable substituent, a hydroxyl group, a halogen atom, a cyano group, a C1-C4 alkyl group, a C1-C4 alkoxy group, a C2-C5 acyl group, a C2-C5 acyloxy group, a C2-C5 There are C2-C10 alkoxyalkyleneoxy group which may be substituted by the alkoxycarbonyl group, the alkoxy, or the alkoxyalkyleneoxy group.

Although q1 is an integer of 0-10, it is 0-7 preferable things, and 0-5 are more preferable.

In R ₆₀ of the general formula (CII), the alkyl group is methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, or t-butyl group, hexyl group, 2 -There is one having 1 to 8 carbon atoms such as ethylhexyl group and octyl group.

In formula (CII), -OR ₆₁ is a group (called an acid-decomposable group) which is decomposed by the action of an acid.

Here, as R ₆₁ , tertiary alkyl groups such as t-butyl group, methoxy t-butyl group and t-amyl group (preferably having 4 to 20 carbon atoms), 1-ethoxyethyl group, 1-butoxyethyl group, 1 1-alkoxyethyl group (preferably having 2 to 10 carbon atoms), which may have substituents such as isobutoxyethyl group, 1-cyclohexyloxyethyl group, and 1- [2- (n-butoxy) ethoxy] ethyl group; Tertiary alkoxycarbonyl groups such as alkoxymethyl groups (preferably having 2 to 10 carbon atoms), t-butoxycarbonyl groups and t-amyloxycarbonyl groups (preferably having a substituent such as methoxymethyl group and 1-ethoxymethyl group) Tri, such as 4 to 20 carbon atoms, a tetrahydropyranyl group which may have a substituent, a tetrahydrofuranyl group which may have a substituent, a trimethylsilyl group, a t-butyldimethylsilyl group, a diisopropylmethylsilyl group, etc. Alkyl silyl group, 3-oxocyclohexyl group, etc. are mentioned.

For each of q1, n1, m1, and p1, a plurality of residues present in two or more cases may be the same or different.

Synthesis of the compounds represented by the general formula (CI) and the general formula (CII) of the present invention is a carboxylic acid derivative such as a corresponding carboxylic acid or acid chloride, or a corresponding naphthol derivative, R'-OH, R It is obtained by reaction with '-X (halogen) or a corresponding olefin or reaction of naphthol derivatives with dialkoxycarbonyl ether.

In the positive photoresist composition of the present invention, the dissolution inhibitors represented by the general formulas (CI) and (CII) may be used alone, or two or more thereof may be mixed and used.

In the positive photoresist composition of the present invention, the total amount of the compound represented by the general formula (CI) or (CII) is generally 1 to 40% by weight, preferably 3 to 30% by weight based on the total solids.

Detailed examples of the compound represented by the general formula (CI) below are the following [CI-1] to [CI-108], and detailed examples of the compound represented by the general formula (CII) below [CII-1] to [CII] -52], the compound which can be used for this invention is not limited to these.

Next, as a dissolution inhibitor in another embodiment of the present invention, a substituent (substituent having an acid labile group) containing a carboxylic acid group protected on an acid labile group on the polycyclic structure represented by the general formula (CIII) is at least The compound (O-polymer type dissolution inhibitor) which has two or more structures which hold some is demonstrated.

The oligomer-type dissolution inhibitor preferably contains a substituent having at least one acid labile group and at least one hydroxyl group (OH) on the polycyclic structure represented by the above general formula (CIII) and its polycyclic structure. Condensation is carried out by reacting a saturated polycyclic hydrocarbon compound A with a linear, branched or cyclic bifunctional saturated hydrocarbon compound B (wherein the functional group is a carboxylic acid group or a carboxylic acid halide (eg, chloride) group). Obtained as reaction product.

The condensation reaction product contains 2 to 50 polycyclic moieties derived from saturated polycyclic hydrocarbon compounds A. As the condensation reaction proceeds, the number of polycyclic moieties per molecule changes. The condensation reaction product preferably has on average 2-30 polycyclic moieties, in particular 2-10.

As bifunctional saturated hydrocarbon compound B, it is preferable that it is C1-C15, and dicarboxylic acid, dicarboxylic acid halides, etc. of alkanes, alkoxyalkanes, cycloalkanes, and polycycloalkanes are preferable.

In the saturated polycyclic hydrocarbon compound A, a substituent having an acid labile group (excluding a functional group) preferably has 2 or more and 12 or less carbon atoms. However, when it has 9 or more carbon atoms, it is preferable that saturated polycyclic hydrocarbon compound A has 2 or more hydroxyl groups.

The saturated polycyclic hydrocarbon compound A has a carboxylic acid group protected by an acid labile group. The solubility of the compound in aqueous alkali solution is reduced by protecting a carboxylic acid group with an acid labile group. Therefore, the dissolution inhibitor having such an acid labile group imparts desired alkali aqueous solution insolubility to the resist composition before exposure to a large amount of radiation.

During irradiation, or, generally, during the pre-baking step, the acid labile groups are released, generating an amount of carboxylic acid sufficient to dissolve the resist material in the aqueous alkali solution. Suitable acid labile groups are, for example, t-butyl, t-amyl, 1-methylcyclohexyl, 3-oxocyclohexyl and bis (2-trimethylsilyl) ethyl, and other substituents that are readily desorbed in the presence of a mineral acid. Such extensive acid labile groups are well known to those skilled in the art. In addition, examples of the airway acid-decomposable group defined as W in the formula (II). In the presence of an acid, these groups produce free carboxylic acids and hydrolysis products under addition or acid catalysis.

It is preferable that saturated polycyclic hydrocarbon compound A has 1-3 hydroxyl groups, and it is preferable that a hydroxyl group exists on a 6-membered ring. Cholic acid ester is an example of a polycyclic compound having three hydroxyl groups (one hydroxyl group is present on each six-membered ring) in the polycyclic moiety. Deoxycholic acid ester is an example of the polycyclic compound which has two hydroxyl groups in a polycyclic part (one hydroxyl group exists in each cyclic | annular of two 6-membered rings).

The positive photoresist composition of the present invention may be used in combination with the polymer type dissolution inhibiting agent, as a dissolution inhibitor, a cholic acid ester compound having a structure represented by the following general formula (IV).

(In the formula (IV), X is an acid labile group, and R ₁₀ is present or absent. When present, R ₁₀ is a lower alkylene group having 6 or less carbon atoms, for example, butylene.) Or isobutylene. The polycyclic moiety bears one or more hydroxyl groups as substituents.)

The polycyclic moiety of the compound represented by the general formula (IV) bears at least one hydroxyl group, but the hydroxyl group is generally present on the six-membered ring. Cholic acid ester is an example of a polycyclic compound having three hydroxyl groups (one hydroxyl group is present on each 6-membered ring) in the polycyclic moiety. Deoxycholic acid ester is an example of the polycyclic compound which has two hydroxyl groups in a polycyclic part (one hydroxyl group exists in each cyclic | annular of two 6-membered rings).

When used in combination with an oligomer type dissolution inhibitor and the above-mentioned cholic acid ester compound (hereinafter referred to as a monomer compound), it is preferable that the oligomer type dissolution inhibitor is composed of 90 to 100% by weight of the oligomer dissolution inhibitor and 10 to 90% by weight of the monomer compound.

When using an oligomer type | mold dissolution inhibitor or the said monomer compound together, it is compounded in the range of 1-40 weight%, More preferably, 3-30 weight% with respect to the total solid in a composition in such a total amount. .

This positive photoresist composition of the present invention is applied onto a substrate to form a thin film. As for the film thickness of this coating film, 0.2-1.2 micrometers is preferable. In the present invention, a commercially available inorganic or organic antireflection film can be used if necessary.

As the antireflection film, an inorganic film type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon, α-silicon, etc., and an organic film type made of a light absorber and a polymer material can be used. The former needs to equip a film formation with a vacuum adsorption apparatus, a CVD apparatus, a sputtering apparatus, etc. As the organic antireflection film, for example, a condensation product of a diphenylamine derivative described in Japanese Patent Application Laid-Open No. 7-69611 with a formaldehyde-modified melamine resin, an alkali-soluble resin, a light absorber, or the like described in US Patent No. 5294680 A reaction product of a maleic anhydride copolymer with a diamine light absorbent, a resin binder described in Japanese Patent Application Laid-Open No. 6-118631, and a methirolmelamine-based thermal crosslinking agent; a carboxyl described in Japanese Patent Application Laid-open No. 6-118656. Acrylic resin antireflection film having acid and epoxy groups and absorbers simultaneously in one molecule, consisting of methirolmelamine and benzophenone light absorbers described in Japanese Patent Application Laid-Open No. 8-87115, Japanese Patent Application Laid-open No. 8-179509 The thing which added the low molecular weight absorber to the polyvinyl alcohol resin of description is mentioned.

In addition, as the organic antireflection film, DUV 30 series, DUV-40 series manufactured by Blue and Science, AC-2, AC-3 manufactured by Shipre, etc. may be used.

The resist liquid is applied onto a substrate (e.g., silicon / silicon dioxide coating) used for the manufacture of the precision integrated circuit device (as necessary, on a substrate on which the antireflection film is formed) by a suitable coating method such as a spinner, a coater, and the like. By passing through a predetermined mask and exposing, baking and developing, a good resist pattern can be obtained. Preferred examples of the exposure light include light having a wavelength of 150 nm to 250 nm, and specifically, KrF excimer laser (248 nm), ArF excimer laser (193 nm), F ₂ excimer laser (157 nm), X-rays, electron beams, and the like.

As a developing solution, inorganic alkalis, such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia water, 1st amines, such as ethylamine and n-propylamine, diethylamine, di-n-butylamine, etc. Tertiary ammonium salts such as secondary amines, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide, pyrrole and piperi Alkaline aqueous solutions, such as cyclic amines, such as Dean, can be used.

Furthermore, alcohols and surfactants can be added to the alkaline aqueous solution in an appropriate amount.

Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited to this Example.

Synthesis Example (1) Synthesis of Resin (1-1)

Norbornene, 2-methyl-2-adamantyl acrylate and maleic anhydride were injected into the reaction vessel at a molar ratio of 35/30/35, dissolved in tetrahydrofuran to prepare a solution of 60% solids. It was heated at 60 ° C. under a nitrogen stream. When the reaction temperature was stabilized, 1 mol% of a radical initiator V-601 manufactured by Hwagwang Pure Chemical Co., Ltd. was added to initiate the reaction. After heating for 10 hours, the reaction mixture was diluted twice with tetrahydrofuran, and then charged into a 5-fold tert-butylmethylether / hexane = 1/1 mixed solvent to precipitate white powder. The precipitated powder was again dissolved in tetrahydrofuran and poured into 5 times of tert-butylmethylether / hexane = 1/1 mixed solvent to precipitate white powder, which was collected by filtration and dried to obtain the target resin (1-1). )

When the molecular weight analysis by GPC of the obtained resin (1-1) was tested, it was 10900 (weight average) in polystyrene conversion. In addition, the composition of resin (1-1) by NMR spectrum was 29/29/42 in the molar ratio of norbornene / 2-methyl-2-ademantyl acrylate / maleic anhydride of the present invention.

Hereinafter, resins (1-2) to (1-14) were synthesized by the same method.

The repeating structural unit constituting such a resin is represented by the specific examples (1) to (14) of the resin (for example, the repeating structural units constituting the resins (1-1) and (1-2) are the same). It was.

Examples 1-1 to 1-18 and Comparative Example 1

Preparation and Evaluation of Positive Photoresist Composition

2 g of the resin synthesized in the above synthesis example (shown in Table 2 below), 5 mg of a photoacid generator, an organic basic compound, and 5 mg of a surfactant shown in Table 2, respectively, were blended, and the ratios of the solids were 10% by weight. It dissolved in the solvent shown in 2, and filtered with the microfilter of 0.1 micrometer, and produced the positive resist composition of Examples 1-18.

In addition, Resin (R) shown in Table 2 as Comparative Example 1 (resin A3 obtained in Synthesis Example 10 of JP-A-11-305444, composition ratio: norbornene / maleic anhydride / methacrylate = 25 /) 32/43), a positive resist composition was prepared in the same manner as in Example 1 except that a photoacid generator (PAG-R: 4-methylphenyldiphenylsulfonium trifluoromethanesulfonate) and a solvent were used.

As a solvent,

S1: Propylene Glycol Monomethyl Ether Acetate

S2: Propylene Glycol Monomethyl Ether Propionate

S3: ethyl lactate

S4: Butyl Acetate

S5: 2-heptanone

S6: Propylene Glycol Monomethyl Ether

S7: ethyl ethoxypropionate

S8: γ-butyrolactone

S9: ethylene carbonate

S10: Propylene Carbonate

As surfactant,

W-1: Megafac F176 (product of Dainippon Ink & Chemical Co., Ltd.) (fluorine system)

W-2: Megafac R08 (manufactured by Dainippon Ink & Chemical Co., Ltd.)

W-3: Polysiloxane Polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.)

W-4: Polyoxyethylene nonyl phenyl ether

W-5: Toroidol S-366 (Toroid Chemical Co., Ltd. product)

As an organic basic compound,

1: DBU (1,8-diazabicyclo [5.4.0] -7-undecene)

2: 4-DMAP (4-dimethylaminopyridine)

3: TPI (2,4,5-triphenylimidazole)

4: 2,6-diisopropylaniline

Evaluation test

The adjusted resist solution was applied onto a silicon wafer, baked at 140 ° C. for 90 seconds, and coated with a film thickness of 0.30 μm.

Defocus latitude (DOF):

The wafer thus obtained was exposed while loading a resolution mask on an ArF excimer laser stepper (ArF exposure machine 9300 manufactured by ISI) while changing the exposure amount and focus. Thereafter, the resultant was heated at 155 ° C. for 90 seconds in a clean room, and then developed for 60 seconds in a tetramethylammonium hydroxide developer (2.38%), washed with distilled water, and dried to obtain a pattern.

The resist pattern of the silicon wafer thus obtained was observed with a scanning electron microscope, and the resist was evaluated as follows.

The DOF is represented by the width of the focal point (µm) in which the line width of the pattern obtained is allowed in the range of ± 10% of the line width of the mask pattern using a line & space pattern of 0.15 mu m. The larger this value, the better.

The evaluation results are shown in Table 3.

As shown in Table 3, the positive photoresist composition of the present invention exhibited excellent performance in DOF.

Synthesis Example (2) Synthesis of Resin (2-1)

Norbornene, 2-methyl-2-adamantyl acrylate and maleic anhydride were injected into the reaction vessel at a molar ratio of 30/40/30, dissolved in methyl ethyl ketone to prepare a solution having a solid content of 50%. It was heated at 80 ° C. under a nitrogen stream. When the reaction temperature was stable, 2 mol% of a radical initiator V-60 manufactured by Hwagwang Pure Chemical Co., Ltd. was added thereto to initiate the reaction. After heating for 10 hours, the reaction mixture was added to 5 times the amount of hexane to precipitate white powder. The precipitated powder was again dissolved in tetrahydrofuran and poured into 5 times the amount of hexane to precipitate white powder. The precipitate was collected by filtration. The reprecipitation and filtration were repeated again. The obtained white powder was dried to obtain resin (2-1) as a target product.

When the molecular weight analysis by GPC of the obtained resin (2-1) was tested, it was 7800 (weight average) in polystyrene conversion. In addition, the composition of resin (2-1) by NMR spectrum was 23/38/39 in molar ratio of norbornene / 2-methyl-2-ademantyl acrylate / maleic anhydride of the present invention.

Hereinafter, resins (2-2), (2-3) and reference resins (1) to (3) were synthesized in the same manner.

Repetitive structural units constituting such resins (2-1) to (2-3) were shown in detailed examples (1) to (3) of the resin. In addition, comparative resin (2-1)-(2-3) shows the following repeating structural unit.

Examples 2-1 to 2-10 and Comparative Examples 2-1 to 2-3

Preparation and Evaluation of Positive Photoresist Composition

2 g of the resin synthesized in the synthesis example (shown in Table 5 below), 5 mg of a photoacid generator, an organic basic compound, and 5 mg of a surfactant shown in Table 5, respectively, were blended, and the amounts of the solids were 10% by weight. After melt | dissolving in the solvent shown in 5, it filtered by the 0.1 micrometer microfilter, and produced the positive resist composition of Examples 2-1 to 2-10 and Comparative Examples 2-1 to 2-3.

As a solvent,

S1: Propylene Glycol Monomethyl Ether Acetate

S2: Propylene Glycol Monomethyl Ether Propionate

S3: ethyl lactate

S4: Butyl Acetate

S5: 2-heptanone

S6: Propylene Glycol Monomethyl Ether

S7: ethyl ethoxypropionate

S8: γ-butyrolactone

S9: ethylene carbonate

S10: Propylene Carbonate

As surfactant,

W-1: Megafac F176 (product of Dainippon Ink & Chemical Co., Ltd.) (fluorine system)

W-2: Megafac R08 (manufactured by Dainippon Ink & Chemical Co., Ltd.)

W-3: Polysiloxane Polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.)

W-4: Polyoxyethylene nonyl phenyl ether

W-5: Toroidol S-366 (Toroid Chemical Co., Ltd. product)

As an organic basic compound,

1: DBU (1,8-diazabicyclo [5.4.0] -7-undecene)

2: 4-DMAP (4-dimethylaminopyridine)

3: TPI (2,4,5-triphenylimidazole)

4: 2,6-diisopropylaniline

PAG-R: 4-methylphenyldiphenylsulfonium trifluoromethanesulfonate

Evaluation test

The adjusted resist solution was applied onto a silicon wafer, baked at 140 ° C. for 90 seconds, and coated with a film thickness of 0.30 μm.

The wafer thus obtained was exposed while loading a resolution mask on an ArF excimer laser stepper (ArF exposure machine 9300 manufactured by ISI) while changing the exposure amount and focus. Thereafter, the resultant was heated at 155 ° C. for 90 seconds in a clean room, and then developed for 60 seconds in a tetramethylammonium hydroxide developer (2.38%), washed with distilled water, and dried to obtain a pattern.

The resist pattern of the silicon wafer thus obtained was observed with a scanning electron microscope, and the resist was evaluated as follows.

[Line Edge Roughness]

For the range of 5 µm in the longitudinal edge of the 0.14 µm line pattern obtained with the minimum exposure amount that reproduces the line pattern of 0.14 µm in the mask, the distance from the appropriate baseline with the edge is S-8840 manufactured by Illip Co., Ltd. 50 points were measured, the standard deviation was calculated, and 3σ was calculated. The smaller the value, the better the performance.

The evaluation results are shown in Table 6.

As shown in Table 6 above, the positive photoresist composition of the present invention showed excellent performance at line edge roughness.

Synthesis Example (3) Synthesis of Resin (3-1)

Norbornene, tert-butyl acrylate, and maleic anhydride were injected into the reaction vessel at a molar ratio of 40/20/40, dissolved in methyl ethyl ketone to prepare a solution of 60% solids. It was heated at 60 ° C. under a nitrogen stream. When the reaction temperature was stable, the reaction was initiated by adding 1 mol% of radical initiator V-601 manufactured by Hwagwang Pure Chemical Co., Ltd. After heating for 10 hours, the reaction mixture was diluted twice with methyl ethyl ketone, and then charged into a large amount of tert-butyl methyl ether to precipitate white powder.

The precipitated powder was collected by filtration and dried to obtain Resin (3-1) as a target product.

When the molecular weight analysis by GPC of the obtained resin (3-1) was tested, it was 15300 (weight average) in polystyrene conversion. Moreover, the composition of resin (3-1) by NMR spectrum was 38/17/45 by molar ratio of norbornene / acrylic acid t-butyl ester / maleic anhydride of this invention.

Resins (3-2) to (3-14) were synthesized in the same manner as in Synthesis Example (3). The composition ratio of resin and the weight average molecular weight (Mw) are shown in Table 7.

Examples 3-1 to 3-18 and Comparative Example 3

Preparation and Evaluation of Positive Photoresist Composition

2 g of the resin synthesized in the above synthesis example (shown in Table 8 below) and 5 mg of a photoacid generator, an organic basic compound and 5 mg of a surfactant shown in Table 8, respectively, were added at a ratio of 10% by weight of solids, respectively. It dissolved in the solvent shown in 8, and filtered with the microfilter of 0.1 micrometer, and produced the positive resist composition of Examples 3-1-3-18.

In Comparative Example 3, except that the resin, photoacid generator (PAG-R: 4-methylphenyldiphenylsulfonium trifluoromethanesulfonate) and the solvent shown in Table 8 were used, respectively, in Example 3- In the same manner as in 1, a positive resist composition was prepared.

As a solvent,

S1: Propylene Glycol Monomethyl Ether Acetate

S2: Propylene Glycol Monomethyl Ether Propionate

S3: ethyl lactate

S4: Butyl Acetate

S5: 2-heptanone

S6: Propylene Glycol Monomethyl Ether

S7: ethyl ethoxypropionate

S8: γ-butyrolactone

S9: ethylene carbonate

S10: Propylene Carbonate

As surfactant,

W-1: Megafac F176 (product of Dainippon Ink & Chemical Co., Ltd.) (fluorine system)

W-2: Megafac R08 (manufactured by Dainippon Ink & Chemical Co., Ltd.)

W-3: Polysiloxane Polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.)

W-4: Polyoxyethylene nonyl phenyl ether

W-5: Toroidol S-366 (Toroid Chemical Co., Ltd. product)

As an organic basic compound,

1: DBU (1,8-diazabicyclo [5.4.0] -7-undecene)

2: 4-DMAP (4-dimethylaminopyridine)

3: TPI (2,4,5-triphenylimidazole)

4: 2,6-diisopropylaniline

Evaluation test

The adjusted resist solution was applied onto a silicon wafer, baked at 130 ° C. for 90 seconds, and coated with a film thickness of 0.30 μm.

[Line Edge Roughness]

The obtained wafer was exposed while loading a resolution mask on an ArF excimer laser stepper (ArF exposure machine 9300 manufactured by ISI) while changing the exposure amount and focus. Thereafter, the substrate was heated at 140 ° C. for 90 seconds in a clean room, and then developed for 60 seconds in a tetramethylammonium hydroxide developer (2.38%), washed with distilled water, and dried to obtain a pattern.

The silicon wafer thus obtained was observed for a resist pattern with a scanning electron microscope, and the resist was evaluated as follows.

For a range of 5 μm in the longitudinal edge of a 0.14 μm line pattern obtained with a minimum exposure amount that reproduces a line pattern of 0.14 μm in a mask, the distance from an appropriate reference line with an edge is S-8840, a product of Illip Co., Ltd. 50 points were measured, the standard deviation was calculated, and 3σ was calculated. The smaller the value, the better the performance.

[Resolution]: AR19, manufactured by Sipure Co., Ltd. was applied onto a silicon wafer and baked at 215 ° C for 90 seconds to coat an antireflection film with a film thickness of 850 Pa. Each of the above adjusted resist liquids was applied and baked at 130 ° C. for 90 seconds to coat a resist layer with a film thickness of 0.20 μm. The wafer was exposed while changing the exposure amount with an ArF excimer laser stepper (ArF exposure machine 9300 manufactured by ISI) equipped with a resolution mask. Thereafter, the mixture was heated at 140 ° C. for 90 seconds in a clean room, and then developed for 60 seconds with a tetramethylammonium hydroxide developer (2.38 wt%), washed with distilled water, and dried to obtain a pattern.

And the resolution of the contact hole which can be resolved by the minimum exposure amount which reproduces the contact hole of diameter 0.18 micrometer was made into the resolution.

The evaluation results are shown in Table 9.

As shown in Table 9 above, the positive photoresist composition of the present invention showed excellent performance in line edge roughness and resolution.

Synthesis Example (4) Synthesis of Resin (4-1)

Norbornene, 2-methyl-2-adamantyl acrylate and maleic anhydride were injected into the reaction vessel at a molar ratio of 35/30/35, dissolved in methyl ethyl ketone to prepare a solution having a solid content of 60%. It was heated at 60 ° C. under a nitrogen stream. When the reaction temperature was stable, the reaction was initiated by adding 1.5 mol% of radical initiator V-601 manufactured by Hwagwang Pure Chemical Co., Ltd. After heating for 10 hours, the reaction mixture was diluted twice with methyl ethyl ketone, and then charged into a large amount of tert-butyl methyl ether to precipitate white powder. The precipitated powder was collected by filtration and dried to obtain Resin (4-1) as a target product.

When the molecular weight analysis by GPC of the obtained resin (4-1) was tested, it was 9700 (weight average) in polystyrene conversion. In addition, the composition of resin (4-1) by NMR spectrum was 32/28/40 in the molar ratio of norbornene / acrylic acid 2-methyl-2-ademantyl ester / maleic anhydride of the present invention.

In the same manner as in Synthesis Example (4), the following resins (4-2) to (4-14) were synthesized. The composition ratio and weight average molecular weight (Mw) of resin are shown in Table 10.

Examples 4-1 to 4-18 and Comparative Example 4

Preparation and Evaluation of Positive Photoresist Composition

2 g of the resin synthesized in the synthesis example (shown in Table 11 below) and 5 g of a photoacid generator (amount shown in Table 11), an organic basic compound and 5 mg of a surfactant, respectively, shown in Table 11, were blended, respectively, It dissolved in the solvent shown in Table 11 by the ratio of 10 weight%, and filtered by the 0.1 micrometer microfilter, and prepared the positive resist composition of Examples 4-1-4-18.

In addition, the said Example 4-1 except having used the resin, the photo-acid generator (PAG-R: 4-methylphenyldiphenylsulfonium trifluoromethanesulfonate), and the solvent which were shown in Table 11 as the comparative example 4, respectively. In the same manner as in the positive resist composition was prepared.

As a solvent,

S1: Propylene Glycol Monomethyl Ether Acetate

S2: Propylene Glycol Monomethyl Ether Propionate

S4: Butyl Acetate

S5: 2-heptanone

S8: γ-butyrolactone

S9: ethylene carbonate

As surfactant,

1: Megafac F176 (product of Dainippon Ink & Chemical Co., Ltd.) (fluorine system)

2: Megafac R08 (manufactured by Dainippon Ink & Chemical Co., Ltd.)

3: polysiloxane polymer KP-341 (made by Shin-Etsu Chemical Co., Ltd.)

4: polyoxyethylene nonyl phenyl ether

5: Toroidol S-366 (Toroy Chemical Co., Ltd. product)

As an organic basic compound,

1: DBU (1,8-diazabicyclo [5.4.0] -7-undecene)

2: 4-DMAP (4-dimethylaminopyridine)

3: TPI (2,4,5-triphenylimidazole)

4: 2,6-diisopropylaniline is shown.

Evaluation test

The adjusted resist solution was applied onto a silicon wafer, baked at 140 ° C. for 90 seconds, and coated with a film thickness of 0.20 μm.

The wafer thus obtained was exposed while loading a resolution mask on an ArF excimer laser stepper (ArF exposure machine 9300 manufactured by ISI) while varying the exposure amount and focus. Thereafter, the resultant was heated at 155 ° C. for 90 seconds in a clean room, and then developed for 60 seconds in a tetramethylammonium hydroxide developer (2.38%), washed with distilled water, and dried to obtain a pattern.

The resist pattern of the silicon wafer thus obtained was observed with a scanning electron microscope, and the resist was evaluated as follows.

The evaluation results are shown in Table 12.

[Exposure margin]: The variation ratio (%) of the line width obtained when the exposure amount for reproducing the mask line width of the 0.14 탆 isolated line was changed by ± 5% was used as an index of the exposure margin. The smaller this value is, the more preferable.

As shown in Table 12, the positive photoresist composition of the present invention exhibited excellent exposure margins.

Synthesis Example (5) Synthesis of Resin (5-1)

Norbornene, 2-methyl-2-adamantyl acrylate and maleic anhydride were injected into the reaction vessel at a molar ratio of 35/30/35, dissolved in methyl ethyl ketone to prepare a solution having a solid content of 60%. It was heated at 60 ° C. under a nitrogen stream. When the reaction temperature was stable, the reaction was initiated by adding 1.5 mol% of radical initiator V-601 manufactured by Hwagwang Pure Chemical Co., Ltd. After heating for 10 hours, the reaction mixture was diluted twice with methyl ethyl ketone, and then charged into a large amount of tert-butyl methyl ether to precipitate white powder. The precipitated powder was collected by filtration and dried to obtain Resin (5-1) as a target product.

When the molecular weight analysis by GPC of the obtained resin (5-1) was tested, it was 9700 (weight average) in polystyrene conversion. In addition, the composition of resin (5-1) by NMR spectrum was 32/28/40 in the molar ratio of norbornene / acrylic acid 2-methyl-2-ademantyl ester / maleic anhydride of the present invention.

In the same manner as in Synthesis Example (5), the following resins (5-2) to (5-14) were synthesized. The composition ratio and weight average molecular weight (Mw) of resin are shown in Table 13.

Examples 5-1 to 5-18 and Comparative Example 5

Preparation and Evaluation of Positive Photoresist Composition

2 g of the resin (shown in Table 14) synthesized in the above synthesis example, 30 mg of a photoacid generator, 3 mg of an organic basic compound, and 5 mg of a surfactant, respectively, shown in Table 14, were blended, respectively, at a ratio of 10% by weight of solids. After dissolving in the (S) mixed solvent shown in Table 14, it filtered with a 0.1 micrometer microfilter, and produced the positive resist composition of Examples 5-1-5-18.

In addition, the said Example 5-1 except having used the said resin, the photo-acid generator (PAG-4: 4-methylphenyldiphenylsulfonium trifluoromethanesulfonate), and the solvent which were shown in Table 14 as the comparative example 5, respectively. Similarly, a positive resist composition was prepared.

As a solvent,

S1: Propylene Glycol Monomethyl Ether Acetate

S2: Propylene Glycol Monomethyl Ether Propionate

S3: ethyl lactate

S4: Butyl Acetate

S5: 2-heptanone

S6: Propylene Glycol Monomethyl Ether

S7: ethyl ethoxypropionate

S8: γ-butyrolactone

S9: ethylene carbonate

S10: Propylene Carbonate

As surfactant,

W-1: Megafac F176 (product of Dainippon Ink & Chemical Co., Ltd.) (fluorine system)

W-2: Megafac R08 (manufactured by Dainippon Ink & Chemical Co., Ltd.)

W-3: Polysiloxane Polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.)

W-4: Polyoxyethylene nonyl phenyl ether

W-5: Toroidol S-366 (Toroid Chemical Co., Ltd. product)

As an organic basic compound,

1: DBU (1,8-diazabicyclo [5.4.0] -7-undecene)

2: 4-DMAP (4-dimethylaminopyridine)

3: TPI (2,4,5-triphenylimidazole)

4: 2,6-diisopropylaniline

Evaluation test

The adjusted resist solution was applied onto a silicon wafer, baked at 130 ° C. for 90 seconds, and coated with a film thickness of 0.30 μm.

[Development defect]: Each resist film was applied at 0.3 mu m on a 6-inch bare Si substrate, and dried at 140 DEG C for 60 seconds on a vacuum suction hot plate. Then, it exposed with the ArF excimer laser stepper (ArF exposure machine 9300 by ISI) through the test mask of 0.35 micrometer contact hole pattern (Hole Duty ratio = 1: 3), and post-exposure heating was performed at 140 degreeC for 90 second. . Then, the paddle was developed for 60 seconds with 2.38% TMAH (tetramethylammonium hydroxide aqueous solution), followed by spin drying with clean water for 30 seconds. The developed defect function of the sample thus obtained was measured with a KLA-2112 manufactured by KLA Tencol Co., Ltd., and the obtained primary data value was defined as the developed defect function.

[Number of Particles and Number of Particles Increased after Time Preservation]: After leaving the positive photoresist composition solution (plating solution) prepared as described above immediately after the preparation (particle initial value) at 4 ° C. for one week (particles after time elapsed) The particle number in the water) was measured with a particle counter manufactured by Leon Corporation. Along with the particle initial value, the number of particle increase calculated by (number of particles after elapsed time)-(particle initial value) was evaluated. Moreover, the particle | grains measured the particle number of 0.25 micrometers or more in 1 ml of resist composition liquids.

[Variation of Sensitivity Before and After Preservation of Time]:

The obtained wafer was exposed while loading a resolution mask on an ArF excimer laser stepper (ArF exposure machine 9300 manufactured by ISI) while changing the exposure amount and focus. Then, after heating at 140 degreeC for 90 second in a clean room, it developed for 60 second with the tetramethylammonium hydroxide developing solution (2.38%), wash | cleaned with distilled water, and dried, and obtained the pattern.

The resist pattern of the silicon wafer thus obtained was observed and confirmed with a scanning electron microscope, and the resist was evaluated as follows.

The positive photoresist composition solution (plating solution) adjusted as described above was evaluated for the sensitivity immediately after the crude solution (with the minimum exposure amount reproducing the line & space pattern of 0.15 μm as the sensitivity), and the composition solution was kept at 4 ° C. for 1 week. The sensitivity (the same evaluation method as the above) after leaving to stand was evaluated, and the sensitivity variation rate was evaluated by the following formula.

Sensitivity variation rate (%) = | (sensitivity before preservation)-(sensitivity after preservation) | / (sensitivity before preservation) * 100

The evaluation results are shown in Table 15.

As shown in Table 15, the positive photoresist composition of the present invention showed excellent performance throughout the evaluation items.

Synthesis Example (6) Synthesis of Resin (6-1)

Norbornene, 2-methyl-2-adamantyl acrylate and maleic anhydride were injected into the reaction vessel at a molar ratio of 35/30/35, dissolved in methyl ethyl ketone to prepare a solution having a solid content of 60%. It was heated at 60 ° C. under a nitrogen stream. When the reaction temperature was stable, the reaction was initiated by adding 1.5 mol% of radical initiator V-601 manufactured by Hwagwang Pure Chemical Co., Ltd. After heating for 10 hours, the reaction mixture was diluted twice with methyl ethyl ketone, and then charged into a large amount of tert-butyl methyl ether to precipitate white powder. The precipitated powder was collected by filtration and dried to obtain Resin (6-1) as a target product.

When the molecular weight analysis by GPC of the obtained resin (6-1) was tested, it was 9700 (weight average) in polystyrene conversion. In addition, the composition of resin (6-1) by NMR spectrum was 32/28/40 in the molar ratio of norbornene / acrylic acid 2-methyl-2-ademaletyl ester / maleic anhydride of the present invention.

Resins (6-2) to (6-14) were synthesized in the same manner as in Synthesis Example (6). The composition ratio of resin and the weight average molecular weight (Mw) are shown in Table 16.

Examples 6-1 to 6-18 and Comparative Example 6

Preparation and Evaluation of Positive Photoresist Composition

2 g of the resin synthesized in the above synthesis example (shown in Table 17 below), 110 mg of a photoacid generator, 5 mg of an organic basic compound, and 5 mg of a surfactant shown in Table 17, respectively, were mixed at a ratio of 10% by weight of solids, respectively. After dissolving in the (S) mixed solvent shown in Table 17, it filtered with a 0.1 micrometer microfilter, and produced the positive resist composition of Examples 6-1-6-18.

In addition, the said Example 6-1 except having used the said resin, photo-acid generator (PAG-4: 4-methylphenyldiphenylsulfonium trifluoromethanesulfonate), and a solvent which were shown in Table 17 as the comparative example 6, respectively. Similarly, a positive resist composition was prepared.

As a solvent,

S1: Propylene Glycol Monomethyl Ether Acetate

S2: Propylene Glycol Monomethyl Ether Propionate

S3: ethyl lactate

S4: Butyl Acetate

S5: 2-heptanone

S6: Propylene Glycol Monomethyl Ether

S7: ethyl ethoxypropionate

S8: γ-butyrolactone

S9: ethylene carbonate

S10: Propylene Carbonate

As surfactant,

W-1: Megafac F176 (product of Dainippon Ink & Chemical Co., Ltd.) (fluorine system)

W-2: Megafac R08 (manufactured by Dainippon Ink & Chemical Co., Ltd.)

W-3: Polysiloxane Polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.)

W-4: Polyoxyethylene nonyl phenyl ether

W-5: Toroidol S-366 (Toroid Chemical Co., Ltd. product)

As an organic basic compound,

1: DBU (1,8-diazabicyclo [5.4.0] -7-undecene)

2: 4-DMAP (4-dimethylaminopyridine)

3: TPI (2,4,5-triphenylimidazole)

4: 2,6-diisopropylaniline

Evaluation test

The adjusted resist solution was applied onto a silicon wafer, baked at 140 ° C. for 90 seconds, and coated with a film thickness of 0.30 μm.

[Development defect]: Each resist film was applied at 0.5 mu m on a 6-inch bare Si substrate, and dried at 140 DEG C for 60 seconds on a vacuum suction hot plate. Then, it exposed with ArF excimer laser stepper (ArF exposure machine 9300 by ISI) through the test mask of 0.35 micrometer contact hole pattern (Hole Duty ratio = 1: 3), and post-exposure heating was performed at 155 degreeC for 90 second. . Then, the paddle was developed for 60 seconds with 2.38% TMAH (tetramethylammonium hydroxide aqueous solution), followed by spin drying with clean water for 30 seconds. The developed defect function of the sample thus obtained was measured with a KLA-2112 manufactured by KLA Tencol Co., Ltd., and the obtained primary data value was defined as the developed defect function.

[Number of Particles and Number of Particles Increased after Time-Lapse Storage]: After leaving the positive photoresist composition solution (plating solution) prepared as described above immediately after the preparation (particle initial value) and at 40 ° C. for one week (particles after time-lapse) Number of particles in the liquid) was measured with a particle counter manufactured by Leon Corporation. Along with the particle initial value, the number of particle increase calculated by (number of particles after elapsed time)-(particle initial value) was evaluated. In addition, the particle | grains measured the particle number of 0.25 micrometers or more in 1 ml of resist composition liquids.

[Variation of Sensitivity Before and After Preservation of Time]:

The obtained wafer was exposed while loading a resolution mask on an ArF excimer laser stepper (ArF exposure machine 9300 manufactured by ISI) while changing the exposure amount and focus. Then, after heating at 155 degreeC for 90 second in a clean room, it developed for 60 second with the tetramethylammonium hydroxide developing solution (2.38%), wash | cleaned with distilled water, and dried, and obtained the pattern.

The resist pattern of the silicon wafer thus obtained was observed with a scanning electron microscope, and the resist was evaluated as follows.

The positive photoresist composition solution (plating solution) adjusted as described above was evaluated for the sensitivity immediately after the preparation (with a minimum exposure amount reproducing a line & space pattern of 0.15 µm as the sensitivity), and the composition solution was kept at 40 ° C for one week. The sensitivity (the same evaluation method as the above) after leaving to stand was evaluated, and the sensitivity variation rate was evaluated by the following formula.

Sensitivity variation rate (%) = | (sensitivity before preservation)-(sensitivity after preservation) | / (sensitivity before preservation) * 100

The evaluation results are shown in Table 18.

As shown in Table 18, the positive photoresist composition of the present invention showed excellent performance throughout the evaluation items.

Synthesis Example (7) Synthesis of Resin (7-1)

Norbornene, 2-methyl-2-adamantyl acrylate and maleic anhydride were injected into the reaction vessel at a molar ratio of 35/30/35, dissolved in methyl ethyl ketone to prepare a solution having a solid content of 60%. It was heated at 60 ° C. under a nitrogen stream. When the reaction temperature was stable, the reaction was initiated by adding 1.5 mol% of radical initiator V-601 manufactured by Hwagwang Pure Chemical Co., Ltd. After heating for 10 hours, the reaction mixture was diluted twice with methyl ethyl ketone, and then charged into a large amount of tert-butyl methyl ether to precipitate white powder. The precipitated powder was collected by filtration and dried to obtain Resin (7-1) as a target product.

When the molecular weight analysis by GPC of the obtained resin (7-1) was tested, it was 9700 (weight average) in polystyrene conversion. In addition, the composition of resin (7-1) by NMR spectrum was 32/28/40 in the molar ratio of norbornene / acrylic acid 2-methyl-2-ademantyl ester / maleic anhydride of the present invention.

In the same manner as in Synthesis Example (7), the following resins (7-2) to (7-14) were synthesized. The composition ratio and weight average molecular weight (Mw) of resin are shown in Table 19.

Synthesis of Oligomer Dissolution Inhibitor (A)

After drying in an oven and purged with argon, deoxycholate t-butyl (2 g, 4.457 mmol) (preliminarily dried under vacuum at 60 ° C.), N-methylmorpholine (distilled from CaH ₂ ) 1.1 mL, 10 mmol) and methylene chloride (8 mL) were charged to synthesize t-butyldeoxycholate.

After cooling to 0 ° C., glutaryl dichloride (0.552 g, 4.324 mmol, 97 mol%) only of distillate was slowly added using an airtight injector. After the addition reaction was completed, precipitation of the salt began. The resulting slurry was stirred, heated to room temperature over 30 minutes, and then heated at 40 ° C for 30 minutes.

This mixture was then injected into a separating lot containing methylene chloride (40 mL) and water (40 mL). The organic layer was washed four times with dilute ammonium acetate aqueous solution, and then concentrated to obtain a solid. This solid was lyophilized with dioxane to obtain a powder.

This powder was dispersed in water (100 mL) and stirred for 1 hour. The powder was recovered by filtration and dried in vacuo. The yield was 1.5 g (64% yield). When this method was repeated using tetrahydrofuran (THF), the yield was 1.7 g (74% yield). The structure of the obtained oligomer is shown below. This oligomer is referred to as dissolution inhibitor A.

oligo (t-butyldeoxycholate-co-glutalate) terminated with t-butyldeoxy cholate (where tBu represents a t-butyl substituent and Y represents hydrogen or the lower letter M or l Separated by parentheses to indicate one of the other units in a given structure.)

The number of units M per molecule is from about 5 to about 20. As noted above, the condensation reaction can occur at any OH group on the polycyclic compound. Therefore, the above structure is shown for convenience in describing the reaction product, and does not represent the actual structure of the obtained product.

Synthesis of Oligomer Dissolution Inhibitor (B)

After drying in an oven and purged with argon, deoxycholate t-butyl (2 g, 4.457 mmol) (preliminarily dried under vacuum at 60 ° C.), N-methylmorpholine (distilled from CaH ₂ ) 3.26 g, 32.2 mmol) and THF (35 mL) were charged to synthesize t-butyldeoxycholate.

It cooled to 0 degreeC, and distillate only glutaryl dichloride (1.232 mL, 9.654 mmol, 1.632 g) was slowly added using an airtight injector. The shrink tube was sealed and heated to 60 ° C. overnight. The reaction solution was then diluted with methanol (20%) and precipitated in water containing acetic acid (500 mL) to neutralize N-methylmorpholine.

Dilution / precipitation was repeated twice. The polymer was recovered by filtration, washed with distilled water and dried in vacuo at 60 ° C. The yield was 4 g (74% yield). The structure of the obtained oligomer is shown below. This oligomer was used as a dissolution inhibitor B.

oligo (t-butylcholate-co-glutalate) terminated with t-butyl cholate (where tBu denotes a t-butyl substituent, Y denotes by hydrogen or parentheses with lower letter M or l) It is partitioned and represents any of the other units in a given structure.)

The number of units M per molecule is from about 5 to about 20. As noted above, the condensation reaction can occur at any OH group on the polycyclic compound. Therefore, the condensation reaction product of the cholic acid ester (that is, the cholate) having three hydroxyl groups as a substituent tends to have a branched structure. The above structure is shown for convenience of explanation of the reaction product and does not represent the actual structure of the obtained product.

Examples 7-1 to 7-20 and Comparative Example 7

Preparation and Evaluation of Positive Photoresist Composition

2 g of the resin shown in Table 20, a photoacid generator (amount shown in Table 20), 200 mg of a dissolution inhibitor, 5 mg of an organic basic compound, and 5 mg of a surfactant were mixed, and the solvents shown in Table 20 at a ratio of 10% by weight of solids respectively After dissolving, the resultant was filtered with a 0.1 μm microfilter to prepare the positive resist composition of Example 7-1 to 7-20. In Table 2, in the case where a plurality of the dissolution inhibitor and the solvent are used, the ratio represents the weight ratio.

As Comparative Example 7, a positive resist composition was prepared in the same manner as above using the resin, photoacid generator and solvent shown in Table 20, respectively. This is a composition corresponding to Example 11 of Japanese Patent Laid-Open No. 11-305444.

The surfactants in Table 20 are as follows.

1: Megafac F176 (product of Dainippon Ink & Chemical Co., Ltd.) (fluorine system)

2: Megafac R08 (manufactured by Dainippon Ink & Chemical Co., Ltd.)

3: polysiloxane polymer KP-341 (made by Shin-Etsu Chemical Co., Ltd.)

4: polyoxyethylene nonyl phenyl ether

5: Toroidol S-366 (Toroy Chemical Co., Ltd. product)

In Table 20, the organic basic compound is as follows.

1: DBU (1,8-diazabicyclo [5.4.0] -7-undecene)

2: 4-DMAP (4-dimethylaminopyridine)

3: TPI (2,4,5-triphenylimidazole)

4: 2,6-diisopropylaniline is shown.

In Table 20, the solvent is as follows.

S1: Propylene Glycol Monomethyl Ether Acetate

S2: Propylene Glycol Monomethyl Ether Propionate

S3: ethyl lactate

S4: Butyl Acetate

S5: 2-heptanone

S6: Propylene Glycol Monomethyl Ether

S7: ethyl ethoxypropionate

S8: γ-butyrolactone

S9: ethylene carbonate

S10: Propylene Carbonate

Evaluation test

An antireflection film AR19, manufactured by Cypress, was applied onto the silicon wafer, baked at 215 ° C. for 90 seconds, and coated with a film thickness of 850 mm 3. The adjusted resist solution was applied onto the substrate thus obtained, baked at 135 ° C. for 90 seconds, and coated with a film thickness of 0.30 μm.

The wafer thus obtained was exposed while loading a resolution mask on an ArF excimer laser stepper (ArF exposure machine 9300 manufactured by ISI) while changing the exposure amount. Thereafter, the mixture was heated at 150 ° C. for 90 seconds in a clean room, and then developed for 60 seconds with a tetramethylammonium hydroxide developer (2.38 wt%), washed with distilled water, and dried to obtain a pattern.

[Contact Hole Pattern Resolution]

The resolution (micrometer) of the contact hole which can be resolved by the minimum exposure amount which reproduces the contact hole of diameter 0.18 micrometer with respect to each resist was made into the resolution.

[Trench pattern resolution]

For each resist, a trench pattern split width (占 퐉) that can be resolved at the minimum exposure amount for reproducing a trench pattern having a diameter of 0.16 占 퐉 with a binary mask was used as the resolution.

The results are shown in Table 21.

As shown in Table 21, it can be seen that the positive photoresist composition of the present invention has excellent resolution with respect to contact holes and trench patterns.

The present invention can provide a positive photoresist composition having a wide out-of-focus latitude in the manufacture of a semiconductor device and having excellent process tolerance and line edge roughness or resolution.

In addition, the present invention can provide a positive photoresist composition having improved exposure margin in manufacturing a semiconductor device.

In addition, the present invention can reduce the occurrence of development defects in the manufacture of semiconductor devices, and can prevent the generation of particles in the case of dissolving solid content in a solvent or during storage over time. A positive photoresist composition that can be prevented can be provided.

Finally, the present invention can provide a positive photoresist composition capable of satisfactorily resolving contact holes and trench patterns in the manufacture of semiconductor devices.

Claims (18)

(A) A resin containing a repeating structural unit represented by the following general formula (I) and a repeating structural unit represented by the following general formula (II), wherein the dissolution rate in an alkali developer is increased by the action of an acid, and (B) A positive photoresist composition comprising a compound that generates an acid by irradiation with actinic light or radiation. [In General Formula (I), R <_11> -R <_14> represents the alkyl group which may respectively have a hydrogen atom or a substituent. a is 0 or 1; In General Formula (II), R ₁ represents a hydrogen atom or a methyl group. A represents a single bond or a combination of two or more groups selected from the group consisting of a single bond, an alkylene group, a cycloalkylene group, an ether group, a thioether group, a carbonyl group and an ester group. W represents one or more of the substructures containing alicyclic hydrocarbons represented by the following general formulas (pI) to (pVI).] [Wherein R ₁₅ represents a methyl group, an ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group or sec-butyl group, and Z represents an atomic group necessary for forming an alicyclic hydrocarbon group together with carbon atoms . R ₁₆ to R ₂₀ each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R ₁₆ to R ₁₈ or any one of R ₁₉ and R ₂₀ is alicyclic. A formula hydrocarbon group is shown. R ₂₁ to R ₂₅ each independently represent a hydrogen atom, a C 1-4 carbon group, a linear or branched alkyl group or an alicyclic hydrocarbon group, provided that at least one of R ₂₁ to R ₂₅ represents an alicyclic hydrocarbon group. In addition, any one of R <_23> , R <_25> represents a C1-C4 linear or branched alkyl group or alicyclic hydrocarbon group. R ₂₆ to R ₂₉ each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, except that at least one of R ₂₆ to R ₂₉ represents an alicyclic hydrocarbon group.] The positive photoresist composition according to claim 1, wherein the content of the repeating structural unit represented by the general formula (II) is 5 mol% to 30 mol% based on the total repeating structural units. The positive photoresist composition according to claim 1, wherein the content of the repeating structural unit represented by the general formula (II) is 15 mol% to 20 mol% based on the total repeating structural units. (A) A resin containing a repeating structural unit represented by the following general formula (I) and a repeating structural unit represented by the following general formula (IIA), wherein the dissolution rate in an alkali developer is increased by the action of an acid, and (B) A positive photoresist composition comprising a compound that generates an acid by irradiation with actinic light or radiation. [In General Formula (I), R <_11> -R <_14> represents the alkyl group which may respectively have a hydrogen atom or a substituent. a is 0 or 1; In general formula (IIA), A represents single-bond, a combination of 2 or more groups chosen from the group which consists of a single bond, an alkylene group, a cycloalkylene group, an ether group, a thioether group, a carbonyl group, and an ester group. W represents one or more of the substructures containing alicyclic hydrocarbons represented by the following general formulas (pI) to (pVI).] [Wherein, R ₁₅ represents a methyl group, an ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group or sec-butyl group, and Z represents an atomic group necessary for forming an alicyclic hydrocarbon group together with a carbon atom . R ₁₆ to R ₂₀ each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R ₁₆ to R ₁₈ or any one of R ₁₉ and R ₂₀ is alicyclic. A formula hydrocarbon group is shown. R ₂₁ to R ₂₅ each independently represent a hydrogen atom, a C 1-4 carbon group, a linear or branched alkyl group or an alicyclic hydrocarbon group, provided that at least one of R ₂₁ to R ₂₅ represents an alicyclic hydrocarbon group. In addition, any one of R <_23> , R <_25> represents a C1-C4 linear or branched alkyl group or alicyclic hydrocarbon group. R ₂₆ to R ₂₉ each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, except that at least one of R ₂₆ to R ₂₉ represents an alicyclic hydrocarbon group.] The compound of claim 1, wherein the acid is generated by irradiation with actinic light or radiation, and is represented by the following formula (PAG6 ') or an imide sulfonate compound represented by the following general formula (PAG7'). A positive photoresist composition comprising a diazodisulfone-based compound to be displayed. [In formula (PAG6 '), R ⁶⁰ represents the alkyl group which may have a substituent or the allyl group which may have a substituent. A ⁶⁰ represents an alkylene group, a cyclic alkylene group, an alkenylene group, a cyclic alkenylene group, or an allylene group which may have a substituent. In formula (PAG7 '), R ⁷⁰ each independently represents a straight chain, branched or cyclic alkyl group which may have a substituent, or an allyl group which may have a substituent.] A positive photoresist composition according to claim 5, wherein the compound (B) generates an acid by irradiation with actinic light or radiation, and further contains a sulfonium salt compound. The compound which generates an acid by irradiation of the said (B) actinic light or a radiation, Comprising: The compound represented by following General formula (I ')-(III') is contained, The positive photo of Claim 1 characterized by the above-mentioned. Resist composition. [In Formulas (I ') to (III'): R ₅₁ to R ₈₇ are the same or different and represent a hydrogen atom, a straight chain, branched or cyclic alkyl group, a straight chain, branched or cyclic alkoxy group, a hydroxyl group, a halogen atom or a -SR ₈₈ group. R ₈₈ represents a straight chain, branched or cyclic alkyl group or allyl group. In addition, two or more of R ₅₁ to R ₆₅ , R ₆₆ to R ₇₇ , and R ₇₈ to R ₈₇ are bonded to each other and include a ring containing one or two or more selected from a single bond, carbon, oxygen, sulfur and nitrogen. May be formed. X ^- is R ^F SO ₃ ^- represents an. Here, R ^F is a straight-chain, branched or cyclic alkyl group substituted by 2 or more carbon atoms, fluorine.] The positive photoresist composition of claim 7 wherein R ^F of X ⁻ is a linear alkyl group substituted with fluorine represented by CF ₃ (CF ₂ ) y (where y is an integer of 1 to 15). . 8. The positive photoresist composition of claim 7, wherein y is an integer from 1 to 9. 8. The positive photoresist composition of claim 7, wherein y is an integer of 1-5. (SI) at least one selected from the following solvent A1 group and at least one selected from the following solvent B1 group, or at least one selected from the solvent A1 group and 1 selected from the following solvent C1 group. Mixed solvents containing more than one species: Group A1: Bone Ketones Group B1: alkyl lactic acid, alkyl alkoxypropionate, acetate ester and propylene glycol monoalkyl ether Group C1: γ-butyrolactone, ethylene carbonate and propylene carbonate A positive photoresist composition comprising: The mixed solvent according to claim 1, further comprising (SI) at least one selected from the following solvent A1 group, at least one selected from the following solvent B1 group, and at least one selected from the following solvent C1 group: Group A1: Bone Ketones Group B1: alkyl lactic acid, alkyl alkoxypropionate, acetate ester and propylene glycol monoalkyl ether Group C1: γ-butyrolactone, ethylene carbonate and propylene carbonate A positive photoresist composition comprising: (SII) 1 or more selected from the following solvent A2 group, 1 or more selected from the following solvent B2 group, or 1 or more selected from the solvent A2 group, and 1 selected from the following solvent C2 group. Mixed solvents containing more than one species: Group A2: propylene glycol monoalkyl ether carboxylate B2 group: propylene glycol monoalkyl ether, alkyl lactic acid, acetate ester, chain ketone and alkyl alkoxypropionate Group C2: γ-butyrolactone, ethylene carbonate and propylene carbonate A positive photoresist composition comprising: The mixed solvent according to claim 1, further comprising (SII) at least one selected from the following solvent A2 group, at least one selected from the following solvent B2 group, and at least one selected from the following solvent C2 group: Group A2: propylene glycol monoalkyl ether carboxylate B2 group: propylene glycol monoalkyl ether, alkyl lactate, acetate ester, chain ketone and alkyl alkoxypropionate Group C2: γ-butyrolactone, ethylene carbonate and propylene carbonate A positive photoresist composition comprising: The positive photoresist composition according to claim 1, further comprising a compound represented by the following general formula (CI) or (CII). [In general formula (CI), X represents an oxygen atom, a sulfur atom, -N ( _R53 )-, or a single bond. R ₅₁ , R ₅₂ and R ₅₃ each independently represent a hydrogen atom or an alkyl group, and R 'represents a group constituting an acid-decomposable group at -COOR'. R represents an n 1 -valent moiety including a bridged hydrocarbon, a saturated cyclic hydrocarbon or a naphthalene ring. n1 represents the integer of 1-4, q1 represents the integer of 0-10. In General Formula (CII), R ₆₀ represents an alkyl group or a halogen atom, R ₆₁ represents a group constituting an acid-decomposable group at -OR ₆₁ , and m1 represents an integer of 0 to 4. p1 represents the integer of 1-4.] The compound according to claim 1, comprising a compound having at least two substituents having a substituent containing a carboxylic acid group protected with an acid labile group on the polycyclic structure represented by the following general formula (CIII). Positive photoresist composition. The positive photoresist composition according to any one of claims 1 to 16, wherein the resin (A) further contains a repeating structural unit represented by the following general formula (III). In formula (III): Z ₂ represents -O- or -N (R ₃ )-. Here, R ₃ represents a hydrogen atom, a hydroxyl group or -OSO ₂ -R ₄ . R ₄ represents an alkyl group, haloalkyl group, cycloalkyl group or camphor residue.] The positive photoresist composition according to any one of claims 1 to 17, further comprising (D) an organic basic compound, (E) a fluorine-based and / or silicon-based surfactant.