KR20010083046A - 평면 전자 방출기 - Google Patents

평면 전자 방출기 Download PDF

Info

Publication number
KR20010083046A
KR20010083046A KR1020007014014A KR20007014014A KR20010083046A KR 20010083046 A KR20010083046 A KR 20010083046A KR 1020007014014 A KR1020007014014 A KR 1020007014014A KR 20007014014 A KR20007014014 A KR 20007014014A KR 20010083046 A KR20010083046 A KR 20010083046A
Authority
KR
South Korea
Prior art keywords
electrons
material system
providing
electrical charge
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020007014014A
Other languages
English (en)
Korean (ko)
Inventor
페트르 비스코르
닐스 오울 니엘슨
아르민 디롱
블라디미르 콜라리크
Original Assignee
페트르 비스코르
블라디미르 콜라리크
아르민 디롱
닐스 오울 니엘슨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 페트르 비스코르, 블라디미르 콜라리크, 아르민 디롱, 닐스 오울 니엘슨 filed Critical 페트르 비스코르
Publication of KR20010083046A publication Critical patent/KR20010083046A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06—Cathodes
    • H01J35/065—Field emission, photo emission or secondary emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/06—Cathode assembly
    • H01J2235/062—Cold cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020007014014A 1998-06-11 1999-06-11 평면 전자 방출기 Ceased KR20010083046A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8897898P 1998-06-11 1998-06-11
US60/088,978 1998-06-11
PCT/DK1999/000323 WO1999065050A1 (en) 1998-06-11 1999-06-11 Planar electron emitter (pee)

Publications (1)

Publication Number Publication Date
KR20010083046A true KR20010083046A (ko) 2001-08-31

Family

ID=22214628

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007014014A Ceased KR20010083046A (ko) 1998-06-11 1999-06-11 평면 전자 방출기

Country Status (18)

Country Link
US (1) US7399987B1 (https=)
EP (1) EP1086480B1 (https=)
JP (1) JP2002518788A (https=)
KR (1) KR20010083046A (https=)
CN (1) CN1202545C (https=)
AT (1) ATE249094T1 (https=)
AU (1) AU755927B2 (https=)
BR (1) BR9912185A (https=)
CA (1) CA2332556A1 (https=)
CZ (1) CZ20004455A3 (https=)
DE (1) DE69911012T2 (https=)
HU (1) HUP0103631A3 (https=)
IL (1) IL139693A0 (https=)
RU (1) RU2224327C2 (https=)
SK (1) SK18512000A3 (https=)
UA (1) UA64802C2 (https=)
WO (1) WO1999065050A1 (https=)
ZA (1) ZA200006692B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW497278B (en) * 2000-03-24 2002-08-01 Japan Science & Tech Corp Method for generating trajectory electron, trajectory electron solid state semiconductor element
US7129626B2 (en) * 2001-03-20 2006-10-31 Copytele, Inc. Pixel structure for an edge-emitter field-emission display
US6643248B2 (en) * 2001-04-16 2003-11-04 Hewlett-Packard Development Company, L.P. Data storage device
US6891176B2 (en) * 2003-06-20 2005-05-10 Nanion Aps Planar electron emitter with extended lifetime and system using same
US6872964B2 (en) 2003-08-20 2005-03-29 Hewlett-Packard Development Company, L.P. Data storage device
EP1801842A1 (en) * 2005-12-23 2007-06-27 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Device for generating X-rays and use of such a device
JP2007194087A (ja) * 2006-01-19 2007-08-02 Matsushita Electric Ind Co Ltd 電子放出装置およびその製造方法
KR20090012246A (ko) * 2006-05-31 2009-02-02 파나소닉 주식회사 플라스마 디스플레이 패널과 그 제조방법
JP5354598B2 (ja) * 2009-12-17 2013-11-27 独立行政法人産業技術総合研究所 電子源
WO2011079434A1 (zh) * 2009-12-29 2011-07-07 海洋王照明科技股份有限公司 场致发射白光的装置
UA111585C2 (uk) * 2010-01-08 2016-05-25 Трай Альфа Енерджи, Інк. Перетворення високоенергетичних фотонів в електрику
CN102243967B (zh) * 2011-05-25 2013-05-22 西安交通大学 基于多孔介电材料薄膜的弹道场发射显示器件阴极的制备方法
US9443691B2 (en) 2013-12-30 2016-09-13 General Electric Company Electron emission surface for X-ray generation
GB2531326B (en) * 2014-10-16 2020-08-05 Adaptix Ltd An X-Ray emitter panel and a method of designing such an X-Ray emitter panel
US9525077B1 (en) * 2015-11-04 2016-12-20 Texas Instruments Incorporated Integration of a baritt diode
ES2858089T3 (es) 2016-01-07 2021-09-29 Univ New York State Res Found Fotomultiplicador de selenio

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE716262A (https=) * 1967-07-25 1968-11-04
GB1303659A (https=) 1969-11-12 1973-01-17
NL184589C (nl) 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4683399A (en) 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
GB2109160B (en) * 1981-11-06 1985-05-30 Philips Electronic Associated Semiconductor electron source for display tubes and other equipment
NL8400297A (nl) 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
NL8600675A (nl) 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
US4823004A (en) 1987-11-24 1989-04-18 California Institute Of Technology Tunnel and field effect carrier ballistics
EP0367195A3 (en) 1988-10-31 1991-10-02 Matsushita Electric Industrial Co., Ltd. Mim cold-cathode electron emission elements and methods of manufacture thereof
DE69033677T2 (de) 1989-09-04 2001-05-23 Canon K.K., Tokio/Tokyo Elektronenemissionselement- und Herstellungsverfahren desselben
US5229682A (en) 1989-12-18 1993-07-20 Seiko Epson Corporation Field electron emission device
NL9000297A (nl) 1990-02-08 1991-09-02 Philips Nv Ladingsgekoppelde inrichting.
JPH0425175A (ja) 1990-05-21 1992-01-28 Canon Inc ダイオード
RU2020642C1 (ru) * 1990-05-29 1994-09-30 Научно-исследовательский институт "Платан" с заводом Плоский электронно-оптический преобразователь
US5212426A (en) 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
EP0504603B1 (en) 1991-02-20 1997-07-16 Canon Kabushiki Kaisha Semiconductor electron emission device
JP3126158B2 (ja) * 1991-04-10 2001-01-22 日本放送協会 薄膜冷陰極
US5536193A (en) 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5686791A (en) 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5463275A (en) 1992-07-10 1995-10-31 Trw Inc. Heterojunction step doped barrier cathode emitter
EP0597537B1 (en) 1992-11-12 1998-02-11 Koninklijke Philips Electronics N.V. Electron tube comprising a semiconductor cathode
DK146692D0 (da) 1992-12-07 1992-12-07 Petr Viscor Fremgangsmaade og apparat til bestemmelse af karakteristiske elektriske materialeparametre for halvledende materialer
EP0601637B1 (en) 1992-12-08 1999-10-27 Koninklijke Philips Electronics N.V. Cathode ray tube comprising a semiconductor cathode
RU2065228C1 (ru) * 1993-06-04 1996-08-10 Институт физики полупроводников СО РАН Многоэлементный ик-приемник на горячих носителях с длинноволновой границей 0,2 эв
US5340997A (en) 1993-09-20 1994-08-23 Hewlett-Packard Company Electrostatically shielded field emission microelectronic device
CH689190A5 (fr) 1993-10-19 1998-11-30 Hans Ulrich Meyer Instrument de mesure de longueurs ou d'angles.
US5528103A (en) 1994-01-31 1996-06-18 Silicon Video Corporation Field emitter with focusing ridges situated to sides of gate
US5631196A (en) 1994-07-18 1997-05-20 Motorola Method for making inversion mode diamond electron source
US5729094A (en) * 1996-04-15 1998-03-17 Massachusetts Institute Of Technology Energetic-electron emitters
US5712490A (en) 1996-11-21 1998-01-27 Itt Industries, Inc. Ramp cathode structures for vacuum emission

Also Published As

Publication number Publication date
RU2224327C2 (ru) 2004-02-20
CN1305636A (zh) 2001-07-25
WO1999065050A1 (en) 1999-12-16
DE69911012D1 (de) 2003-10-09
HUP0103631A2 (hu) 2002-01-28
CA2332556A1 (en) 1999-12-16
ATE249094T1 (de) 2003-09-15
EP1086480B1 (en) 2003-09-03
UA64802C2 (uk) 2004-03-15
BR9912185A (pt) 2001-04-10
IL139693A0 (en) 2002-02-10
HUP0103631A3 (en) 2004-07-28
JP2002518788A (ja) 2002-06-25
EP1086480A1 (en) 2001-03-28
ZA200006692B (en) 2002-02-18
SK18512000A3 (sk) 2003-01-09
CN1202545C (zh) 2005-05-18
AU755927B2 (en) 2003-01-02
AU4358999A (en) 1999-12-30
CZ20004455A3 (cs) 2002-06-12
DE69911012T2 (de) 2004-06-17
HK1034358A1 (en) 2001-10-19
US7399987B1 (en) 2008-07-15

Similar Documents

Publication Publication Date Title
KR102402975B1 (ko) 붕소층을 갖는 실리콘 기판 상에 전계 이미터 어레이를 포함하는 광전 음극
AU755927B2 (en) Planar electron emitter (PEE)
EP0706196B1 (en) An electron emission cathode; an electron emission device, a flat display, a thermoelectric cooling device incorporating the same; and a method for producing the electron emission cathode
JP3226745B2 (ja) 半導体冷電子放出素子及びこれを用いた装置
SE443061B (sv) Halvledaranordning for generering av ett elektronstralknippe, sett for framstellning av halvledaranordningen samt anvendning av halvledaranordningen for att generera ett elektronstralknippe dels i ett kameraror, dels i
US4801994A (en) Semiconductor electron-current generating device having improved cathode efficiency
US9671507B2 (en) Solid-state neutron detector device
Su et al. Spatial non-uniform hot carrier luminescence from 4H-SiC pin avalanche photodiodes
NL8204240A (nl) Halfgeleiderinrichting voor het emitteren van elektronen en inrichting voorzien van een dergelijke halfgeleiderinrichting.
Thomas et al. Photosensitive field emission from silicon point arrays
JPH08321256A (ja) 電子放出陰極、それを用いた電子放出素子、フラットディスプレイ、及び熱電冷却装置、ならびに電子放出陰極の製造方法
Cova et al. A view on progress of silicon single-photon avalanche diodes and quenching circuits
Baum et al. Negative electron affinity photocathodes as high-performance electron sources. Part 1: achievement of ultrahigh brightness from an NEA photocathode
HK1034358B (en) Planar electron emitter (pee)
Rogalski Photon detectors
CA2095849A1 (en) Silicon avalanche photodiode array
Maslyanchuk et al. Charge Transport Properties of CdTe X/γ-Rays Detectors with TiO x Schottky Contacts
Schomaker Performance of the hybrid photomultiplier tube (HPMT)
Khan ELECTRICAL AND OPTICAL PROPERTIES OF CHLORINE ION-IMPLANTED ZINC-TELLURIDE.
Wyrsch et al. Amorphous silicon based particle detectors
Winn High gain photodetectors formed by nano/micromachining and nanofabrication
Atac Advanced Photodetectors for High Energy Physics Particle Astrophysics and Medical

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20001209

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20040610

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20060127

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20060523

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20060127

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I