KR20010073306A - ferroelectric recording media and method for fabricating the same - Google Patents
ferroelectric recording media and method for fabricating the same Download PDFInfo
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- KR20010073306A KR20010073306A KR1020000001570A KR20000001570A KR20010073306A KR 20010073306 A KR20010073306 A KR 20010073306A KR 1020000001570 A KR1020000001570 A KR 1020000001570A KR 20000001570 A KR20000001570 A KR 20000001570A KR 20010073306 A KR20010073306 A KR 20010073306A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10532—Heads
- G11B11/10534—Heads for recording by magnetising, demagnetising or transfer of magnetisation, by radiation, e.g. for thermomagnetic recording
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
- G11B11/10589—Details
- G11B11/10591—Details for improving write-in properties, e.g. Curie-point temperature
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
Abstract
Description
본 발명은 정보 저장용 강유전체 기록 매체에 관한 것이다.The present invention relates to a ferroelectric recording medium for storing information.
최근, 하드 디스크(hard disk), 광 디스크(optical disk)와 같은 정보 저장(data storage) 장치 기술의 급격한 발달로 1 Gbit/in2이상의 기록 밀도를 갖는 정보 저장 장치를 개발하게 되었으며, 디지털 기술의 급격한 발달은 더욱 고용량의 정보 저장 장치를 요구하게 되었다.Recently, with the rapid development of data storage device technologies such as hard disks and optical disks, information storage devices having a recording density of 1 Gbit / in 2 or more have been developed. Rapid developments have resulted in the demand for higher capacity information storage devices.
그러나, 기존의 정보 저장 장치는 하드 디스크의 수퍼-파라마그네틱(super-paramagnetic) 한계나 또는 광 디스크의 레이저의 회절 한계 등으로 인하여 기록 밀도가 제한된다.However, the existing information storage device has a limited recording density due to the super-paramagnetic limit of a hard disk or the diffraction limit of a laser of an optical disk.
최근, 근접장 광학(near-field optics) 기술을 이용하여 광의 회절 한계를 극복하여 100 Gbit/in2이상의 기록 밀도를 갖는 정보 저장 장치를 개발하려는 연구가 이루어지고 있다.Recently, research has been conducted to develop an information storage device having a recording density of 100 Gbit / in 2 or more by overcoming the diffraction limit of light using near-field optics technology.
한편, 기존의 정보 저장 장치와는 전혀 다른 방법으로 AFM(Atomic Force Microscopy) 팁(tip)을 이용하여 고용량 정보 저장 장치를 제작하고자 하는 연구가 진행되고 있다.On the other hand, the research to manufacture a high-capacity information storage device using the AFM (Atomic Force Microscopy) tip in a completely different way to the existing information storage devices are in progress.
ATM 팁은 수 nm 크기까지 작게 할 수 있기 때문에 AFM을 이용하여 원자 레벨의 표면 미세 구조도 관찰할 수 있게 되었다.Because ATM tips can be as small as several nm in size, AFM can also be used to observe atomic-level surface microstructures.
이러한 특성을 갖는 AFM 팁을 이용하면 이론적으로 테라 비트(tera bit)급의 정보 저장 장치도 가능하리라 예상된다.Using AFM tips with these characteristics, it is expected that theoretically a tera bit information storage device could be possible.
AFM을 이용한 정보 저장 장치에서 중요한 것 중의 하나는 정보 저장 장치에 사용되는 기록 매체의 종류와 기록 방법이다.One of the important things in information storage using AFM is the type and recording method of a recording medium used in the information storage.
대표적인 것으로는 강유전체 기록 매체를 이용하는 것이 활발히 연구되고 있다.As a representative example, the use of ferroelectric recording media has been actively studied.
도 1a는 일반적인 강유전체 기록 매체를 보여주는 구조단면도이고, 도 1b 및 도 1c는 강유전체 기록 매체에 정보를 읽고 쓰는 방법을 보여주는 도면이다.1A is a structural cross-sectional view showing a typical ferroelectric recording medium, and FIGS. 1B and 1C are diagrams showing a method of reading and writing information on a ferroelectric recording medium.
도 1a에 도시된 바와 같이, 강유전체 기록 매체는 실리콘 웨이퍼(Si wafer)위에 실리콘과 강유전체층과의 확산 방지를 위하여 SiO2버퍼층을 증착한 후, 하부전극을 증착한다.As shown in FIG. 1A, a ferroelectric recording medium deposits an SiO 2 buffer layer on a silicon wafer to prevent diffusion of silicon and the ferroelectric layer, and then deposits a lower electrode.
그리고, 하부전극 위에 기록 매체로 사용할 PZT(Pb(Zr, Ti)O3) 또는 SBT(SrBi2Ta2O9) 등의 강유전체 박막을 증착하여 제작한다.Then, a ferroelectric thin film such as PZT (Pb (Zr, Ti) O 3 ) or SBT (SrBi 2 Ta 2 O 9 ) to be used as a recording medium is deposited on the lower electrode.
이와 같이, 제작된 강유전체 기록 매체는 도 1b에 도시된 바와 같이, 하부전극과 AFM 팁 사이에 직류(DC) 전압을 인가하여 강유전체 박막의 도메인(domain)이 특정한 방향으로 배열하게 함으로써 데이터를 쓰게 된다.As shown in FIG. 1B, the produced ferroelectric recording medium writes data by applying a direct current (DC) voltage between the lower electrode and the AFM tip to arrange the domains of the ferroelectric thin film in a specific direction. .
또한, 도 1c에 도시된 바와 같이 하부 전극과 AFM 팁 사이에 미소한 AC 전압을 인가하면 강유전체 박막과 AFM 팁 사이에 미소한 힘이 형성되게 되며, 이러한 힘의 크기는 강유전체 박막의 도메인의 방향에 따라 달라지게 된다.In addition, as shown in FIG. 1C, when a small AC voltage is applied between the lower electrode and the AFM tip, a small force is formed between the ferroelectric thin film and the AFM tip, and the magnitude of the force is in the direction of the domain of the ferroelectric thin film. It depends.
따라서, 이러한 힘의 크기는 강유전체 박막의 도메인 방향에 따라 달라지게 되므로 이를 검출하여 데이터를 읽을 수 있게 된다.Therefore, since the magnitude of the force varies depending on the domain direction of the ferroelectric thin film, the force can be detected and data can be read.
강유전체 박막을 기록 매체로 이용하면 데이터의 쓰기 속도가 빠르고, 전력 소모가 극히 작으며, 반복 쓰기가 가능하다는 장점이 있다.Using a ferroelectric thin film as a recording medium has the advantage of fast data writing speed, extremely low power consumption, and repeatable writing.
그러나, 강유전체 기록 매체는 데이터 유지 특성이 나쁘다는 것이 큰 문제점으로 지적되고 있다.However, it has been pointed out that the ferroelectric recording medium has a bad data retention characteristic.
이는 도메인의 방향을 조절하여 데이터를 저장한 후, 시간이 지남에 따라 잔류 분극 값이 급격히 감소하여 데이터를 잃어버리는 현상으로 실용화에 치명적인 문제점이라 생각된다.This is a fatal problem in the practical use of the data after storing the data by adjusting the direction of the domain and then losing the data due to the rapid decrease of the residual polarization value over time.
이 외에도 강유전체 박막은 다결정이기 때문에 결정 입계(grain boundary)로 인하여 표면 평탄도가 나쁘다는 문제점이 있다.In addition, since the ferroelectric thin film is polycrystalline, there is a problem in that the surface flatness is poor due to grain boundaries.
기록 매체의 표면 평탄도가 나쁘면, AFM 팁과 기록 매체와의 거리를 일정하게 조절하는 데 소요되는 시간으로 인하여 데이터의 읽기/쓰기 속도가 느려지게 되며 팁의 마모를 가져올 수도 있다.If the surface flatness of the recording medium is bad, the time taken to constantly adjust the distance between the AFM tip and the recording medium may slow down the read / write speed of the data and may cause the wear of the tip.
본 발명의 목적은 기록 유지 특성 및 읽기/쓰기 속도를 향상시킬 수 있는 강유전체 기록 매체 및 그 제조방법을 제공하는데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a ferroelectric recording medium capable of improving recording retention characteristics and read / write speed and a method of manufacturing the same.
도 1a는 일반적인 강유전체 기록 매체를 보여주는 구조단면도1A is a structural cross-sectional view showing a typical ferroelectric recording medium
도 1b 및 도 1c는 일반적인 강유전체 기록 매체에 정보를 읽고 쓰는 방법을 보여주는 도면1B and 1C show a method of reading and writing information to a general ferroelectric recording medium.
도 2a 내지 도 2d는 본 발명에 따른 강유전체 기록 매체의 제조공정을 보여주는 공정단면도2A to 2D are cross-sectional views showing a manufacturing process of the ferroelectric recording medium according to the present invention.
본 발명에 따른 강유전체 기록 매체는 기판 위에 형성되는 하부 전극과, 하부 전극 위에 형성되는 강유전체층과, 강유전체층의 소정영역 위에 형성되는 상부 전극들과, 각 상부 전극 사이의 강유전체층 위에 형성되는 절연층으로 구성된다.A ferroelectric recording medium according to the present invention includes a lower electrode formed on a substrate, a ferroelectric layer formed on a lower electrode, upper electrodes formed on a predetermined region of the ferroelectric layer, and an insulating layer formed on the ferroelectric layer between each upper electrode. It consists of.
여기서, 기판과 하부 전극 사이에는 버퍼층이 형성되고, 상부 전극들은 하부 전극과 동일한 물질로 형성되며, 상부 전극들과 절연층의 표면 높이는 동일하게 형성된다.Here, the buffer layer is formed between the substrate and the lower electrode, the upper electrodes are formed of the same material as the lower electrode, the surface height of the upper electrode and the insulating layer is formed the same.
본 발명에 따른 강유전체 기록 매체 제조방법은 기판 위에 버퍼층, 하부 전극, 강유전체층, 상부 전극을 순차적으로 형성하는 단계와, 상부 전극의 소정영역들을 식각하여 강유전체층을 노출시키는 단계와, 상부 전극을 포함한 전면에 절연층을 형성하고 CMP(Chemical Mechanical Polishing)을 이용하여 상부 전극이 노출될 때까지 절연층을 식각하여 표면을 평탄화시키는 단계로 이루어진다.A method of manufacturing a ferroelectric recording medium according to the present invention includes sequentially forming a buffer layer, a lower electrode, a ferroelectric layer, and an upper electrode on a substrate, etching certain regions of the upper electrode to expose the ferroelectric layer, and including an upper electrode. Forming an insulating layer on the front surface and etching the insulating layer until the upper electrode is exposed by using chemical mechanical polishing (CMP) to planarize the surface.
여기서, 절연층 형성 전에, TiO2또는 Al2O3버퍼층을 형성할 수도 있고, 절연층 형성 후에, 약 600℃ 이상의 온도에서 열처리할 수도 있다.Here, before forming the insulating layer, a TiO 2 or Al 2 O 3 buffer layer may be formed, or after forming the insulating layer, heat treatment may be performed at a temperature of about 600 ° C. or higher.
그리고, 절연층은 SiO2로 이루어지고, 저압화학기상증착법(LPCVD)으로 증착되며, 절연층 식각은 CMP(Chemical Mechanical Polishing) 방법으로 식각하여 표면을 평탄화시킨다.The insulating layer is made of SiO 2 , and is deposited by low pressure chemical vapor deposition (LPCVD), and the insulating layer is etched by CMP (Chemical Mechanical Polishing) to planarize the surface.
이와 같이 제작되는 본 발명은 강유전체 기록 매체 위에 상부 전극을 형성하여 기록 유지 특성을 향상시키고, 상부 전극이 형성된 강유전체 기록 매체 위에 절연층을 증착하고 CMP를 이용하여 평탄한 표면을 형성함으로써, AFM 팁의 스캔(scan) 속도를 증가시켜 읽기/쓰기 속도를 향상시킬 수 있다.The present invention thus produced forms an upper electrode on the ferroelectric recording medium to improve recording retention characteristics, and deposits an insulating layer on the ferroelectric recording medium on which the upper electrode is formed, and forms a flat surface using CMP, thereby scanning the AFM tip. You can improve the read / write speed by increasing the scan speed.
본 발명의 다른 목적, 특징 및 잇점들은 첨부한 도면을 참조한 실시예들의 상세한 설명을 통해 명백해질 것이다.Other objects, features and advantages of the present invention will become apparent from the following detailed description of embodiments taken in conjunction with the accompanying drawings.
상기와 같은 특징을 갖는 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 설명하면 다음과 같다.Referring to the accompanying drawings, preferred embodiments of the present invention having the features as described above are as follows.
본 발명은 종래의 강유전체 기록 매체가 상부 전극을 형성하지 않은 것과는 달리 강유전체 박막 위에 전극의 증착 및 식각을 행하여 상부 전극을 형성함으로써, 강유전체의 상, 하부에 동일한 계면을 형성하여 기록 유지 특성을 향상시킨 것이다.According to the present invention, unlike the conventional ferroelectric recording medium which does not form the upper electrode, the upper electrode is formed by depositing and etching the electrode on the ferroelectric thin film to form the same interface on the upper and lower portions of the ferroelectric to improve recording retention characteristics. will be.
그리고, 본 발명은 상부 전극과 강유전체 박막 사이의 단차와 강유전체 박막 및 전극의 표면 굴곡으로 인하여 AFM 팁의 스캔(scan) 속도가 감소하고, 팁이 마모되는 문제점을 해결하기 위하여, 강유전체 박막과 상부 전극 위에 절연층을 증착하고, CMP(Chemical Mechanical Polishing)를 이용하여 평탄한 표면을 형성함으로써, AFM 팁의 스캔 속도를 증가시켜 읽기/쓰기 속도를 향상 시키고, 팁의 마모를 방지한 것이다.In addition, the present invention reduces the scanning speed of the AFM tip due to the step between the upper electrode and the ferroelectric thin film and the surface curvature of the ferroelectric thin film and the electrode, and to solve the problem that the tip is worn, the ferroelectric thin film and the upper electrode By depositing an insulating layer on top and forming a flat surface using chemical mechanical polishing (CMP), the scan speed of the AFM tip is increased to improve the read / write speed and prevent tip wear.
즉, 본 발명의 핵심은 상부 전극을 사용하여 기록 유지 특성을 향상시키는 것과 절연층의 증착과 CMP 방법을 사용하여 평탄한 표면을 형성하는 것이다.That is, the core of the present invention is to improve recording retention characteristics using the upper electrode and to form a flat surface using the deposition of the insulating layer and the CMP method.
일반적으로, 강유전체 기록 매체가 기록 유지 특성이 나쁜 원인은 강유전체에 탈분극 필드(depolarization field)가 존재하여 강유전체의 잔류 분극이 시간이 경과함에 따라 감소하기 때문이다.In general, the reason why the ferroelectric recording medium has poor recording retention characteristics is that a depolarization field exists in the ferroelectric, and the residual polarization of the ferroelectric decreases with time.
탈분극 필드(depolarization field)는 강유전체 도메인(domain)과 반대방향으로 존재하는 전기장으로, 강유전체가 서로 다른 상/하부 계면을 갖는 것과 관계 있는 것으로 알려져 있다.The depolarization field is an electric field existing in a direction opposite to the ferroelectric domain, and it is known that the ferroelectric is related to having different upper and lower interfaces.
종래의 강유전체 기록 매체의 하부 계면은 Pt 등의 하부 전극과 접촉하고 있는 반면에, 상부 계면은 전극을 따로 형성하지 않았다.The lower interface of the conventional ferroelectric recording medium is in contact with the lower electrode such as Pt, whereas the upper interface does not separately form the electrode.
이로 인해, 종래는 탈분극 필드가 크게 나타나는 것으로 생각된다.For this reason, it is conventionally considered that a depolarization field appears large.
본 발명에서는 이러한 탈분극 필드를 최소화하기 위하여 상부전극을 형성하였다.In the present invention, the upper electrode is formed to minimize the depolarization field.
도 2a 내지 도 2d는 본 발명에 따른 강유전체 기록 매체의 제조공정을 보여주는 공정단면도로서, 강유전체 박막의 형성까지는 종래의 강유전체 기록 매체와 동일하다.2A to 2D are process cross-sectional views showing a manufacturing process of a ferroelectric recording medium according to the present invention, up to the formation of a ferroelectric thin film, which is the same as a conventional ferroelectric recording medium.
먼저, 도 2a에 도시된 바와 같이 실리콘 웨이퍼 위에 Si와 강유전체층과의 확산 방지를 위하여 SiO2와 Si3N4와 같은 버퍼층을 증착하고, 버퍼층 위에 하부 전극을 증착한다.First, as shown in FIG. 2A, a buffer layer such as SiO 2 and Si 3 N 4 is deposited on the silicon wafer to prevent diffusion of Si and the ferroelectric layer, and a lower electrode is deposited on the buffer layer.
여기서, 하부 전극으로는 주로 Pt/Ti 박막이 주로 사용되지만 RuO2, IrO2, (La,Sr)CoO3, LaNiO3, SrRuO3등의 산화물 전극이 사용될 수도 있다.Here, the lower electrode by mainly Pt / Ti film is mainly used, but RuO 2, IrO 2, (La , Sr) CoO 3, LaNiO 3, SrRuO 3 or the like of the oxide electrode may be used.
이어, 하부 전극 위에 기록 매체로 사용할 PZT(Pb(Zr, Ti)O3) 또는 SBT(SrBi2Ta2O9) 등의 강유전체 박막을 형성한다.Subsequently, a ferroelectric thin film such as PZT (Pb (Zr, Ti) O 3 ) or SBT (SrBi 2 Ta 2 O 9 ) to be used as a recording medium is formed on the lower electrode.
그리고, 도 2b에 도시된 바와 같이 강유전체 박막 위에 기록 유지 특성을 향상시키기 위하여 상부 전극을 증착하고, 각 비트(bit)를 정의하기 위하여 상부 전극을 식각한다.As shown in FIG. 2B, an upper electrode is deposited on the ferroelectric thin film to improve recording retention characteristics, and the upper electrode is etched to define each bit.
여기서, 상부전극은 일반적으로 Pt가 사용되지만 하부 전극이 Pt 이외의 다른 전극이 사용될 때, 하부 전극과 동일한 물질을 상부 전극으로 사용하는 것이 바람직하다.Here, Pt is generally used as the upper electrode, but when the lower electrode is other than Pt, it is preferable to use the same material as the upper electrode as the upper electrode.
이와 같은 방법으로 강유전체 기록 매체를 제조하면, 기록 유지 특성은 크게 개선되지만, 상부 전극과 강유전체 박막사이에 큰 단차가 생성되어 AFM 팁의 스캔 속도가 크게 감소하며 이는 읽기/쓰기 속도가 크게 감소하는 원인이 된다.The production of the ferroelectric recording medium in this manner greatly improves the recording retention characteristics, but a large step is generated between the upper electrode and the ferroelectric thin film, which greatly reduces the scanning speed of the AFM tip, which causes a significant decrease in the read / write speed. Becomes
따라서, 본 발명에서는 이를 개선하기 위하여 절연층의 증착과 CMP를 사용하였다.Therefore, in the present invention, the deposition of the insulating layer and the CMP were used to improve this.
도 2c에 도시된 바와 같이, 상부 전극을 형성한 후, 그 위에 절연층을 형성하였다.As shown in FIG. 2C, after forming the upper electrode, an insulating layer was formed thereon.
여기서, 절연층은 일반적으로 저압화학기상증차(LPCVD) 법으로 증착된 SiO2가 사용되지만, 수소 열화 방지 등을 위하여 SiO2를 증착하기 전에 TiO2나 Al2O3와 같은 버퍼층을 증착할 수도 있다.Here, in general, SiO 2 deposited by low pressure chemical vapor deposition (LPCVD) is used, but a buffer layer such as TiO 2 or Al 2 O 3 may be deposited before deposition of SiO 2 to prevent hydrogen degradation. have.
그리고, 절연층 형성 후에 절연층 형성으로 인한 열화를 회복하기 위하여 약 600℃ 이상의 고온 산소 분위기에서 열처리한다.After the insulation layer is formed, heat treatment is performed in a high temperature oxygen atmosphere of about 600 ° C. or higher in order to recover the degradation due to the insulation layer formation.
하지만, 절연층 형성 후에도 여전히 표면에 단차가 존재하므로 도 2d에 도시된 바와 같이 CMP를 이용하여 상부 전극이 드러날 때까지 SiO2로 이루어진 절연층을 식각 연마하여 평탄한 표면을 얻을 수 있도록 하였다.However, since the step still exists on the surface after the insulating layer is formed, as shown in FIG. 2D, a flat surface may be obtained by etching and polishing the insulating layer made of SiO 2 until the upper electrode is exposed using CMP.
이와 같은 방법으로 제조된 강유전체 기록 매체는 기록 유지 특성을 크게 개선시킬 수 있을 뿐만 아니라, CMP를 이용하여 평탄한 표면을 형성함으로써 읽기/쓰기 속도도 크게 향상시킬 수 있었다.The ferroelectric recording medium manufactured in this way not only greatly improved the recording retention characteristics but also greatly improved the read / write speed by forming a flat surface using CMP.
본 발명에 따른 강유전체 기록 매체 및 그 제조방법에 있어서는 다음과 같은 효과가 있다.The ferroelectric recording medium and its manufacturing method according to the present invention have the following effects.
본 발명은 강유전체 기록 매체 위에 상부 전극을 형성하여 기록 유지 특성을 향상시키고, 상부 전극이 형성된 강유전체 기록 매체 위에 절연층을 증착하고 CMP를 이용하여 평탄한 표면을 형성함으로써, AFM 팁의 스캔(scan) 속도를 증가시켜읽기/쓰기 속도를 향상시킬 수 있고 팁의 마모를 방지할 수 있다.The present invention improves recording retention characteristics by forming an upper electrode on a ferroelectric recording medium, deposits an insulating layer on the ferroelectric recording medium on which the upper electrode is formed, and forms a flat surface using CMP, thereby scanning speed of the AFM tip. Increase read speed to improve read / write speed and prevent tip wear.
이상 설명한 내용을 통해 당업자라면 본 발명의 기술사상을 일탈하지 아니하는 범위에서 다양한 변경 및 수정이 가능함을 알 수 있을 것이다.Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention.
따라서, 본 발명의 기술적 범위는 실시예에 기재된 내용으로 한정되는 것이 아니라 특허 청구의 범위에 의하여 정해져야 한다.Therefore, the technical scope of the present invention should not be limited to the contents described in the embodiments, but should be defined by the claims.
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| KR100679604B1 (en) * | 2006-01-20 | 2007-02-06 | 삼성전자주식회사 | Method of manufacturing a information processing apparatus |
| KR100715123B1 (en) * | 2005-07-04 | 2007-05-10 | 전자부품연구원 | Recording media of probe type datastorage device and writing/reading/erasing method thereof |
| US7583095B2 (en) | 2006-03-07 | 2009-09-01 | Samsung Electronics Co., Ltd. | High-density probe array |
| US7888718B2 (en) | 2003-11-24 | 2011-02-15 | Samsung Electronics Co., Ltd. | Charge-dipole coupled information storage medium |
| US8248906B2 (en) | 2007-04-06 | 2012-08-21 | Seagate Technology International, LLC | Ferroelectric hard disk system |
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| JP3217513B2 (en) * | 1992-01-28 | 2001-10-09 | 富士写真フイルム株式会社 | Information recording medium and information recording method |
| JPH0676375A (en) * | 1992-08-31 | 1994-03-18 | Fuji Photo Film Co Ltd | Information recording medium |
| JPH1166651A (en) * | 1997-08-12 | 1999-03-09 | Hitachi Maxell Ltd | Magneto-optical recording medium and its reproducing method |
| KR19990027308A (en) * | 1997-09-29 | 1999-04-15 | 윤종용 | Multilayer Ferroelectric High Density Data Storage Medium and Its Recording and Reproducing Method |
| KR19990039567A (en) * | 1997-11-13 | 1999-06-05 | 윤종용 | Ferroelectric recording medium and recording method thereof |
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| US7888718B2 (en) | 2003-11-24 | 2011-02-15 | Samsung Electronics Co., Ltd. | Charge-dipole coupled information storage medium |
| KR100715123B1 (en) * | 2005-07-04 | 2007-05-10 | 전자부품연구원 | Recording media of probe type datastorage device and writing/reading/erasing method thereof |
| KR100679604B1 (en) * | 2006-01-20 | 2007-02-06 | 삼성전자주식회사 | Method of manufacturing a information processing apparatus |
| US7583095B2 (en) | 2006-03-07 | 2009-09-01 | Samsung Electronics Co., Ltd. | High-density probe array |
| US8248906B2 (en) | 2007-04-06 | 2012-08-21 | Seagate Technology International, LLC | Ferroelectric hard disk system |
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