KR20010064514A - Polishing plate for fabricating semiconductor - Google Patents

Abstract

PURPOSE: A grinding plate for manufacture of semiconductor device is provided to restrain defect in a grinding process and reduce consumption of abrasive by uniformly distributing abrasive on a grinding surface. CONSTITUTION: A grinding plate(100) has a grinding surface(102) with radius grooves(101a). The radius grooves(101a) are rounded in a direction the same as the rotation direction of the grinding plate(100). A number of eccentric circle-shaped grooves(101b) are provided from the center of the grinding surface(102) to the outer periphery to intersect with the grooves(101a). The grinding plate(100) with the grooves(101a) and the grooves(101b) allows abrasive to be efficiently distributed on the whole grinding surface(102), and prevents abrasive from rapidly flowing toward the periphery of the grinding surface(102).

Description

Polishing plate for fabricating semiconductor

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing plate used in semiconductor manufacturing, and more particularly, to a polishing plate for semiconductor manufacture in which an abrasive is uniformly distributed on a polishing surface on which a wafer is polished in a wafer flattening process and a wafer backside polishing process.

In general, during the process of depositing and etching on the wafer, the planarization process or the wafer backside process is performed to reduce the step difference between the thin film such as the intermediate insulating layer or the deposition film formed on the wafer.

In this process, an abrasive plate for manufacturing a semiconductor is used. Referring to FIG. 1, in the conventional abrasive plate for manufacturing a semiconductor, a groove 11 having a square lattice shape is formed on an abrasive surface 12 on which a wafer is polished. An abrasive made of a material such as fine silicon oxide (SiO 2) particles used for polishing and suppressing frictional heat is supplied through an abrasive supply hole (not shown) formed at the center position of (12).

Referring to FIG. 2, the polishing process by the polishing plate 10 for manufacturing a semiconductor having such a configuration is performed by rotating the polishing plate 10 on the rotation shaft 30 and supplying an abrasive to the polishing surface 12.

Abrasives supplied to the polishing surface 12 are subjected to centrifugal force by the rotation of the polishing plate 10 to flow into the grooves 11 formed in the shape of a square lattice, and flow out to the edges to planarize or polish the back surface of the wafer 20. This is going on.

However, such a conventional polishing plate for semiconductor manufacturing has a problem in that the distribution of the abrasive flowing into the grooves is nonuniform.

In other words, the grooves are formed in the form of lattice, and the abrasive supplied is uniformly distributed in the state where the abrasive plate is stopped, but in the state where the abrasive plate is rotated, it flows to the edge of the polishing surface before it is uniformly distributed in the groove under centrifugal force. Not evenly distributed between

In addition, the abrasive is rapidly exited from the center of the polishing plate to the edge by the centrifugal force, thus increasing the consumption of the abrasive.

Accordingly, such non-uniformly distributed abrasives locally generate frictional heat during polishing, resulting in wafer device defects, and inferior wafer flattening processes and wafer backside grinding failures.

Accordingly, the present invention is to provide a polishing plate for semiconductor manufacturing to reduce the consumption of the abrasive, suppressing the occurrence of defects in the polishing process by uniformly distributed abrasive on the polishing surface to solve the above problems.

Accordingly, in order to achieve the above object, the abrasive plate for semiconductor manufacture according to the present invention, in the abrasive plate for semiconductor manufacture for polishing a wafer, forms radial grooves in a center-to-edge direction on the polished surface of the wafer, and concentric circles on the polished surface. Further form a plurality of further grooves.

In addition, the radial groove is formed to be curved in the same direction as the rotation direction of the abrasive plate.

1 is a plan view of a conventional polishing plate for manufacturing semiconductors.

2 is a view for explaining a polishing process using a conventional polishing plate for semiconductor manufacturing.

3 is a plan view of an abrasive plate for manufacturing a semiconductor according to the present invention.

■ Brief description of the main parts of the drawings ■

10,100: abrasive plate 11,101: groove

12,102: polished surface 20: wafer

30: axis of rotation

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the abrasive plate for manufacturing a semiconductor according to the present invention.

3 is a plan view of an abrasive plate for manufacturing a semiconductor according to the present invention, wherein the abrasive plate 100 for manufacturing a semiconductor according to the present invention has radial grooves 101a formed on the polishing surface 102 which is in contact with a wafer to planarize or polish the back surface. Form.

Here, the radial groove 101a is formed such that the interval between the centers of the polishing surfaces 102 to which the abrasives are supplied to the abrasive supply line is enlarged in the edge direction, and curved in the same direction as the rotation direction of the abrasive plate. To form.

In addition, a plurality of concentric grooves 101b extending in the edge direction from the center of the polishing surface 102 are further formed to intersect the grooves 101a of the radial and curved shapes.

In the polishing plate 100 for manufacturing a semiconductor according to the present invention in which the grooves 101a of the radial and curved shapes and the grooves 101b of the concentric circles are formed, the abrasives are efficiently distributed on the polishing surface 102.

That is, since the grooves 101a are formed on the polishing surface 102 in the same direction as the rotational direction of the spinning and polishing plate 100, the abrasive flows from the center to the edge direction by centrifugal force and is evenly applied to the grooves 101a. Will be distributed.

In addition, since the groove 101b having a concentric shape is formed on the polishing surface 102, the abrasive flowing through the groove 101a branches and flows into the groove 101b, so that the abrasive is uniformly distributed throughout the polishing surface 102.

Further, since the abrasive is branched from the radial and curved grooves 101a into the concentric groove 101b, the abrasive is prevented from flowing rapidly to the edge of the polishing surface 102 by centrifugal force.

Therefore, the distribution of the abrasive is uniform throughout the polishing surface 102, and the consumption of the abrasive is reduced.

As described above, in the polishing plate for semiconductor manufacturing according to the present invention, since the abrasive is uniformly distributed by the grooves formed in the polishing surface, it suppresses the occurrence of local frictional heat during polishing of the wafer, and causes the defect of the planarization process and the back polishing process. This is suppressed.

In addition, the abrasive plate for manufacturing a semiconductor according to the present invention reduces the amount of abrasive flowing out of the polishing surface, thereby reducing the cost of semiconductor device production.

Claims (2)

In a polishing plate for manufacturing a semiconductor for polishing a wafer, Forming a radial groove on the polishing surface for polishing the wafer from the center to the edge; Polishing plate for semiconductor manufacturing, characterized in that a plurality of concentric grooves are formed to cross the radial groove. The method according to claim 1, The radial groove is a polishing plate for semiconductor manufacturing, characterized in that the curved shape in the same direction as the rotation direction of the polishing plate.