JPH06333891A - Substrate polishing apparatus and substrate holding table - Google Patents
Substrate polishing apparatus and substrate holding tableInfo
- Publication number
- JPH06333891A JPH06333891A JP12130093A JP12130093A JPH06333891A JP H06333891 A JPH06333891 A JP H06333891A JP 12130093 A JP12130093 A JP 12130093A JP 12130093 A JP12130093 A JP 12130093A JP H06333891 A JPH06333891 A JP H06333891A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- wafer
- substrate
- holding table
- polishing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板研磨装置および基
板保持台に係り、特に多層配線を有する半導体装置での
複雑な段差を有する基板や、その上に形成された薄膜を
均一性良く研磨して平坦化するのに好適な基板研磨装置
および基板保持台に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate polishing apparatus and a substrate holder, and particularly to a substrate having a complicated step in a semiconductor device having multi-layer wiring and a thin film formed thereon with good uniformity. The present invention relates to a substrate polishing apparatus and a substrate holding table suitable for flattening.
【０００２】[0002]
【従来の技術】半導体装置の製造において、半導体基板
等の基板上に生じた凹凸を平坦化するための研磨技術
は、重要な技術の一つである。2. Description of the Related Art In manufacturing a semiconductor device, a polishing technique for flattening irregularities formed on a substrate such as a semiconductor substrate is one of important techniques.
【０００３】近年、半導体装置の分野ではデバイスの大
容量化が進んでいるが、そのデバイスを構成するチップ
面積をなるべく小さくして大容量化を図るためには多層
配線技術が必要である。この多層配線技術においては、
多層配線の段切れを防止するため下地の平坦化が重要で
ある。なぜならば下地に凹凸があると、これにより段差
が生じ、この段差上に形成される配線が切れる、いわゆ
る段切れ等の不具合が発生するからである。この平坦化
を良好に行うには、初期工程からの平坦化が重要とな
る。In recent years, the capacity of devices has been increasing in the field of semiconductor devices, but in order to increase the capacity by reducing the chip area of the device as much as possible, a multilayer wiring technique is required. In this multilayer wiring technology,
It is important to flatten the base in order to prevent disconnection of the multilayer wiring. This is because if the base has irregularities, a step is caused thereby, and the wiring formed on the step is cut, which causes a problem such as so-called step breakage. In order to perform this flattening satisfactorily, the flattening from the initial step is important.
【０００４】次世代以降の０．３５μｍルール以下とい
う半導体装置の微細化に伴い、リソグラフィープロセス
におけるＤＯＦ（Ｄepth of Ｆocus：焦点深度）が減少
し、絶対膜厚段差をなくす必要性が出てきた。このよう
な要請にはグローバルな平坦化をめざすデバイスプロセ
スが必須である。With the miniaturization of semiconductor devices of 0.35 μm rule or less in the next generation or later, the DOF (Depth of Focus) in the lithography process is reduced, and it is necessary to eliminate the absolute film thickness step. In order to meet such demands, a device process aiming at global planarization is essential.
【０００５】しかしながら、従来平坦化に用いられてい
たＣＶＤ法（化学的気相成長法）では、単に段差を有す
る溝等に単にＳｉＯ2等をＣＶＤ法により埋め込み、全
体的な凹凸をゆるめるようにして平坦化がなされている
が、全体的には完全な平坦化がなされない。このよう
に、従来のＣＶＤ法を用いた平坦化法ではグローバル平
坦化が原理的に困難であった。そのためにグローバル平
坦化が行えるポリッシュプロセスが注目されている。However, in the CVD method (chemical vapor deposition method) which has been conventionally used for flattening, SiO 2 or the like is simply buried in the groove having a step by the CVD method to loosen the overall unevenness. Although it has been flattened, it is not completely flattened overall. As described above, global planarization is difficult in principle by the conventional planarization method using the CVD method. For this reason, attention has been paid to a polishing process capable of global flattening.
【０００６】この平坦化のため、半導体基板の一面に溝
（トレンチ）を堀り、その溝を絶縁物で埋め込んで素子
分離を行う、いわゆるトレンチアイソレーション構造が
知られている。このトレンチアイソレーション構造は、
絶縁物を溝に埋め込んだ後、溝部以外に形成された余分
な絶縁物からなる凸部を除去して基板面を平坦化する必
要がある。ただし、このトレンチアイソレーション技術
を実用化することは、溝幅の広狭によっても平坦化の良
否が変わる。例えば、溝をポリシリコン（ｐｏｌｙ−Ｓ
ｉ）あるいは二酸化シリコン（ＳｉＯ2）等の絶縁物で
埋め込む場合、溝幅が狭い所では表面が平坦な位置に埋
めることができるが、溝幅が広い所、特に深さに比べて
幅が広い所では溝部以外の余分な埋め込み材料をエッチ
バックしても溝の中央部に凹みが残る。For this planarization, there is known a so-called trench isolation structure in which a trench is formed on one surface of a semiconductor substrate and the trench is filled with an insulator to isolate elements. This trench isolation structure
After embedding the insulating material in the groove, it is necessary to remove the convex portion formed of an extra insulating material formed other than the groove portion to flatten the substrate surface. However, when the trench isolation technique is put into practical use, the quality of planarization varies depending on the width of the groove. For example, the groove may be formed of polysilicon (poly-S).
i) or when it is filled with an insulator such as silicon dioxide (SiO 2 ), it can be filled in a position where the groove is narrow and the surface is flat, but where the groove is wide, it is wider than the depth. In some places, a recess remains in the center of the groove even if the excess filling material other than the groove is etched back.
【０００７】図６は従来のウェハー保持装置および研磨
装置断面図である。図６に示すように、ウェハーを研磨
するための装置はウェハー１を保持するためのウェハー
保持装置１０と、ウェハー１表面を研磨するウェハー研
磨装置１１とから構成されている。ウェハー保持装置１
０はウェハー１を吸着保持するための金属からなるウェ
ハー保持台２とウェハー１を回転するためのウェハー保
持台回転軸３とから構成されている。一方、ウェハー研
磨装置１１は研磨材としてのスラリー４を載置するため
の研磨パッド５と、この研磨パッド５を支持するための
研磨プレート６と、研磨プレート６を回転するための研
磨プレート回転軸７と、スラリー４を研磨パッド５に供
給するためのスラリー導入管８とから構成されている。FIG. 6 is a sectional view of a conventional wafer holding device and polishing device. As shown in FIG. 6, the apparatus for polishing the wafer is composed of a wafer holding apparatus 10 for holding the wafer 1 and a wafer polishing apparatus 11 for polishing the surface of the wafer 1. Wafer holding device 1
Reference numeral 0 is composed of a metal wafer holder 2 for sucking and holding the wafer 1 and a wafer holder rotating shaft 3 for rotating the wafer 1. On the other hand, the wafer polishing apparatus 11 includes a polishing pad 5 on which the slurry 4 as a polishing material is placed, a polishing plate 6 for supporting the polishing pad 5, and a polishing plate rotating shaft for rotating the polishing plate 6. 7 and a slurry introduction pipe 8 for supplying the slurry 4 to the polishing pad 5.
【０００８】以下、上述した平坦化のためのトレンチア
イソレーション工程を図７のトレンチアイソレーション
工程断面図を用いて説明する。The above-described trench isolation process for flattening will be described below with reference to the sectional view of the trench isolation process shown in FIG.
【０００９】まず図７（ａ）に示すように、シリコン等
からなる半導体基板２１上に薄いパッド酸化膜２２およ
び薄いシリコン窒化膜２３を形成した後、フォトリソグ
ラフィおよびＲＩＥ（反応性イオンエッチング）により
溝２５を形成し、その後、熱酸化により溝２５の表面お
よび側面に熱酸化膜２４を形成する。First, as shown in FIG. 7A, after a thin pad oxide film 22 and a thin silicon nitride film 23 are formed on a semiconductor substrate 21 made of silicon or the like, by photolithography and RIE (reactive ion etching). The groove 25 is formed, and then the thermal oxide film 24 is formed on the surface and the side surface of the groove 25 by thermal oxidation.
【００１０】その後、図７（ｂ）に示すように、基板２
１の上方全面に溝の埋め込み材料である有機金属化合物
のプラズマ反応により層間膜２６を形成する。次に図６
に示した研磨装置を用いて溝２５以外の領域の層間膜２
６をシリコン窒化膜２３をストッパーとして研磨除去し
て、図７（ｃ）に示すように層間膜２６ａを平坦化す
る。After that, as shown in FIG.
An interlayer film 26 is formed on the entire surface above 1 by a plasma reaction of an organometallic compound that is a material for filling the groove. Next in FIG.
By using the polishing apparatus shown in FIG.
6 is polished and removed using the silicon nitride film 23 as a stopper to planarize the interlayer film 26a as shown in FIG. 7C.
【００１１】[0011]
【発明が解決しようとする課題】図６に示した従来のウ
ェハー研磨装置１１では、ウェハー１より十分広い研磨
プレート６（パッド）上に、ウェハー保持台２に密着し
たウェハー１を所定の圧力で押し付けながら研磨を行っ
ている。In the conventional wafer polishing apparatus 11 shown in FIG. 6, the wafer 1 which is in close contact with the wafer holding table 2 is placed on the polishing plate 6 (pad) which is sufficiently wider than the wafer 1 at a predetermined pressure. Polishing while pressing.
【００１２】実際にウェハー研磨時にウェハーにかかる
圧力を考慮すれば、ウェハーの中心部より周辺部の方が
圧力が高い。この理由は研磨パッド５がウェハー１の押
し付け圧力により摩耗、変形するためである。Considering the pressure applied to the wafer during the actual polishing of the wafer, the pressure is higher in the peripheral portion than in the central portion of the wafer. The reason for this is that the polishing pad 5 is worn and deformed by the pressing pressure of the wafer 1.
【００１３】また、図６に示したウェハー保持装置１０
によりウェハー１は一定の回転数で回転するので、ウェ
ハー１の内周よりも外周の方が回転速度が速くなり、し
かも研磨材としてのスラリー４がウェハー１の中央部に
行き渡り難く面内分布が悪化するので、ウェハー周辺部
の研磨レートが速くなる。特に、最近のウェハーの大口
径化に伴い、ウェハーの中心と周辺の圧力差が更に増大
し、そのため研磨レートがウェハー周辺部と中央部で極
端に差がつく。Further, the wafer holding device 10 shown in FIG.
As a result, since the wafer 1 rotates at a constant rotation speed, the rotation speed becomes faster on the outer circumference than on the inner circumference of the wafer 1, and moreover the slurry 4 as an abrasive is hard to reach the central portion of the wafer 1 and the in-plane distribution is small. Since it deteriorates, the polishing rate of the peripheral portion of the wafer becomes faster. Particularly, with the recent increase in the diameter of the wafer, the pressure difference between the center and the periphery of the wafer further increases, so that the polishing rate is extremely different between the peripheral portion and the central portion of the wafer.
【００１４】従って、図６に示した研磨装置では、図７
（ｃ）の層間膜２６ａの平坦化の均一性が保たれず、半
導体装置の特性上問題となる。Therefore, in the polishing apparatus shown in FIG.
The uniformity of the planarization of the interlayer film 26a in (c) cannot be maintained, which causes a problem in the characteristics of the semiconductor device.
【００１５】そこで本発明は、研磨レートの均一性を向
上させる基板研磨装置および基板保持台を提供すること
を目的とする。Therefore, an object of the present invention is to provide a substrate polishing apparatus and a substrate holding table which improve the uniformity of the polishing rate.
【００１６】[0016]
【課題を解決するための手段】上記課題は請求項１の本
発明によれば、支持台に基板を支持し、該基板面および
／又は該基板上に形成した材料膜の少なくとも一部を被
研磨部として研磨する基板研磨装置において、前記被研
磨部を研磨する研磨プレートの直径が該基板の直径の１
／２以下であり、且つ該研磨プレートを一つの基板に対
して複数具備してなることを特徴とする基板研磨装置に
よって解決される。According to the present invention of claim 1, the above-mentioned object is to support a substrate on a support and to cover at least a part of the substrate surface and / or the material film formed on the substrate. In a substrate polishing apparatus for polishing as a polishing portion, the diameter of the polishing plate for polishing the portion to be polished is 1 of the diameter of the substrate.
// 2 or less, and a plurality of the polishing plates are provided for one substrate, which is solved by a substrate polishing apparatus.
【００１７】更に、上記課題は請求項２の本発明によれ
ば、支持台に基板を支持し、該基板面および／又は該基
板上に形成した材料膜の少なくとも一部を被研磨部とし
て研磨する基板研磨装置において、前記被研磨部を研磨
する研磨プレートを複数の領域に分け、前記基板への前
記研磨プレートの押し付け圧力を各領域においてコント
ロール可能にせしめたことを特徴とする基板研磨装置に
よって解決される。Further, according to the present invention of claim 2, the above object is achieved by supporting a substrate on a support base and polishing at least a part of the substrate surface and / or the material film formed on the substrate as a portion to be polished. In the substrate polishing apparatus, the polishing plate for polishing the portion to be polished is divided into a plurality of areas, and the pressing pressure of the polishing plate against the substrate is controllable in each area. Will be resolved.
【００１８】上述した請求項２の発明において、複数の
領域が同心円状に配設されてなるのが有効である。In the above-mentioned invention of claim 2, it is effective that a plurality of regions are concentrically arranged.
【００１９】また、上記課題は請求項４の本発明によれ
ば、被研磨材としての基板を保持する基板保持台であっ
て、該基板保持台に該基板を収容するための凹部を設け
たことを特徴とする基板保持台によって解決される。Further, according to the present invention of claim 4, there is provided a substrate holder for holding a substrate as a material to be polished, wherein the substrate holder is provided with a recess for accommodating the substrate. This is solved by the substrate holding table.
【００２０】上述した請求項４の発明において、凹部の
深さが前記基板の厚さに対応して変えられるように構成
されているのが好ましい。In the above-mentioned invention of claim 4, it is preferable that the depth of the recess is changed in accordance with the thickness of the substrate.
【００２１】[0021]
【作用】請求項１の発明によれば、被研磨部を研磨する
研磨プレート６ａ，６ｂの直径が該基板の直径の１／２
以下であり、且つ該研磨プレートを一つの基板（ウェハ
ー）１に対して複数具備してなっている。すなわち、研
磨プレート６ａ，６ｂを基板１より小さくすることによ
り研磨プレート内の周辺部と中心部の圧力差を小さくす
ることができる。研磨プレートによるウェハーに対する
押し付け圧力に差が生じる原因は、研磨プレート上に設
けられた研磨パッド５ａ，５ｂの表面形状の変形による
ものであるが、その変形を研磨プレート６ａ，６ｂを小
さくし、ほとんどパッドがウェハー１の外にはみ出さな
いようにすることにより防止できる。特に、本発明では
研磨プレートが複数より好ましくは偶数（対をなし
て）、点対称位置に配されているため、研磨パッド５
ａ，５ｂ従って研磨プレート６ａ，６ｂの押し付け圧力
が均一化できる。このように、本発明では研磨パッドの
変形による圧力差をより低減することができ、ポリッシ
ュレートの分布を向上させることができる。本発明で
は、当然のことながら小さな研磨プレート６ａ，６ｂは
研磨プレート押え機構３１の回転軸３０の回転移動によ
りウェハー１上を均等に動き回ることが必要である。According to the invention of claim 1, the diameter of the polishing plates 6a and 6b for polishing the portion to be polished is 1/2 of the diameter of the substrate.
Below, and a plurality of the polishing plates are provided for one substrate (wafer) 1. That is, by making the polishing plates 6a and 6b smaller than the substrate 1, it is possible to reduce the pressure difference between the peripheral portion and the central portion in the polishing plate. The difference in the pressing pressure of the polishing plate against the wafer is caused by the deformation of the surface shape of the polishing pads 5a, 5b provided on the polishing plate. This can be prevented by preventing the pad from protruding outside the wafer 1. In particular, in the present invention, since the polishing plates are arranged in a point symmetry position, more preferably a plurality of even plates (in pairs), the polishing pad 5
Therefore, the pressing pressure of the polishing plates 6a, 6b can be made uniform. As described above, in the present invention, the pressure difference due to the deformation of the polishing pad can be further reduced, and the distribution of the polish rate can be improved. In the present invention, it is needless to say that the small polishing plates 6a and 6b need to move uniformly on the wafer 1 by the rotational movement of the rotary shaft 30 of the polishing plate pressing mechanism 31.
【００２２】次に、請求項２の発明によれば、被研磨部
を研磨する研磨プレート６を複数の領域３６ａ〜３６ｉ
に分け、基板（ウェハー）１への研磨プレートの押し付
け圧力を各領域においてコントロール可能にせしめてい
る。この発明では、上述した研磨パッド５の変形による
ウェハー１への圧力差を考慮して周辺の圧力を予め少な
くした後に研磨を行い、ポリッシュレート分布を向上さ
せることができる。Next, according to the second aspect of the invention, the polishing plate 6 for polishing the portion to be polished is provided with a plurality of regions 36a to 36i.
The pressure for pressing the polishing plate onto the substrate (wafer) 1 is controllable in each region. In the present invention, considering the pressure difference to the wafer 1 due to the deformation of the polishing pad 5 described above, it is possible to improve the polish rate distribution by performing the polishing after reducing the peripheral pressure in advance.
【００２３】請求項３の発明では、上述した請求項２の
発明において、上記複数の領域が同心円状に配設されて
いる。すなわち、この発明では複数領域（研磨圧力内部
コントロールゾーン４０と研磨圧力外部コントロールゾ
ーン４１の二重）を同心円状にすることにより領域の数
が減少せしめられ、その機構を単純化させることができ
る。According to a third aspect of the present invention, in the above-mentioned second aspect of the invention, the plurality of regions are arranged concentrically. That is, in the present invention, the number of regions can be reduced by concentrically forming a plurality of regions (double of the polishing pressure internal control zone 40 and the polishing pressure external control zone 41), and the mechanism can be simplified.
【００２４】更に、請求項４の発明では、基板１を保持
する基板保持台２に基板１を収容するための凹部２ａを
設けている。この発明ではウェハー１の周辺部に生じて
いたウェハーの厚みによるウェハーと保持台の段差によ
る研磨圧力の増大を抑制し、ポリッシュレート分布を向
上させることができる。Further, according to the invention of claim 4, the substrate holding base 2 for holding the substrate 1 is provided with the recess 2a for accommodating the substrate 1. According to the present invention, the polishing rate distribution can be improved by suppressing an increase in the polishing pressure due to the step between the wafer and the holding table due to the thickness of the wafer which has occurred in the peripheral portion of the wafer 1.
【００２５】請求項５の発明では上述した請求項４の発
明において、前記凹部の深さが基板１の厚さに対応して
変えられるように構成されている。According to a fifth aspect of the present invention, in the above-mentioned fourth aspect of the invention, the depth of the concave portion is configured to be changed according to the thickness of the substrate 1.
【００２６】そのため、基板（ウェハー）の厚さが異な
っても保持台を取り替える必要がない。Therefore, it is not necessary to replace the holder even if the thickness of the substrate (wafer) is different.
【００２７】[0027]
【実施例】以下、本発明の実施例を図面を用いて詳細に
説明する。Embodiments of the present invention will now be described in detail with reference to the drawings.
【００２８】実施例１ 図１は本発明の請求項１に係る基板研磨装置の実施例を
示す。図１に示すように、基本的構成は図６に示した従
来の基板研磨装置においてウェハー保持台と研磨プレー
トの配置を上下逆さにし、しかも研磨プレートを複数
（本実施例では２セット）点対称に具備したものであ
る。Embodiment 1 FIG. 1 shows an embodiment of a substrate polishing apparatus according to claim 1 of the present invention. As shown in FIG. 1, the basic structure is such that in the conventional substrate polishing apparatus shown in FIG. 6, the wafer holder and the polishing plate are arranged upside down, and a plurality of polishing plates (two sets in this embodiment) are point-symmetrical. It was prepared for.
【００２９】すなわち、本実施例ではウェハー１が円形
のウェハー保持台２上に載置されており、ウェハー保持
台２上方にはウェハー１表面を研磨するための２つの研
磨プレート（６ａ，６ｂ）がその表面に研磨パッド５
ａ，５ｂを具備してウェハー保持台２の回転軸３に対し
て点対称位置に配され、しかも各々が回転し得るように
構成されている。研磨プレート６ａ，６ｂはそれぞれ回
転軸７ａ，７ｂを有し、それらの回転軸７ａ，７ｂは研
磨プレートを回転軸３０を中心に備えた研磨プレート押
え機構３１に支承されている。また、各研磨プレート６
ａ，６ｂの大きさ（直径）はウェハー１の直径の１／２
以下として点対称による複数配置を容易とし、しかも従
来装置より研磨パッド内の圧力差を減少させた。That is, in this embodiment, the wafer 1 is placed on the circular wafer holding table 2, and above the wafer holding table 2 are two polishing plates (6a, 6b) for polishing the surface of the wafer 1. Has a polishing pad 5 on its surface
The wafer holding table 2 is provided with a and 5b and is arranged in a point-symmetrical position with respect to the rotation axis 3 of the wafer holding table 2, and each is configured to be rotatable. The polishing plates 6a and 6b have rotating shafts 7a and 7b, respectively, and these rotating shafts 7a and 7b are supported by a polishing plate pressing mechanism 31 having a polishing plate as a center. In addition, each polishing plate 6
The size (diameter) of a and 6b is 1/2 of the diameter of the wafer 1.
As described below, a plurality of arrangements by point symmetry are facilitated, and the pressure difference in the polishing pad is reduced compared to the conventional device.
【００３０】上記ウェハー保持台２の回転軸３の回転数
（ウェハー１の回転数）は１５〜３０ｒｐｍ、研磨プレ
ート６ａ，６ｂの回転軸７ａ，７ｂの回転数は２０〜５
０ｒｐｍ、研磨時のウェハー１への加圧力Ｆは５〜６×
１０3（Ｐａ）とした。The rotation speed of the rotation shaft 3 of the wafer holder 2 (the rotation speed of the wafer 1) is 15 to 30 rpm, and the rotation speeds of the rotation shafts 7a and 7b of the polishing plates 6a and 6b are 20 to 5 respectively.
0 rpm, the pressing force F on the wafer 1 during polishing is 5 to 6 ×
It was 10 3 (Pa).
【００３１】以下、上記構成の研磨装置を用いてウェハ
ーを研磨する動作方法を説明する。The operation method of polishing a wafer by using the polishing apparatus having the above structure will be described below.
【００３２】まず、研磨すべきウェハー１をウェハー保
持台２上にその中心軸をウェハー保持台回転軸３と一致
させるように載置し、ウェハー保持台２を２０ｒｐｍで
回転させ、その上方からスラリー供給管（図示せず）を
介してスラリー４例えばシリカ、ＫＯＨを混合した研磨
材を供給流量２２５ｍｌ／分でウェハー１面に塗布す
る。その後、研磨プレート６ａ，６ｂを回転軸７ａ，７
ｂを中心に３０ｒｐｍの回転数で各々回転させながらウ
ェハー１上に徐々に降下し接触させ、５×１０3Ｐａの
加圧力でウェハー１の研磨（ポリッシュ）を開始する。
ウェハー１の研磨時、各研磨プレート６ａ，６ｂはそれ
ぞれ回転軸７ａ，７ｂの回転による自転と、研磨プレー
ト押え機構３１の回転軸３０の回転によるウェハー１表
面を動き回る公転との両方の回転動作を同時に行いなが
ら、ウェハー１面の研磨を完了した。本研磨装置では上
述した研磨プレート６ａ，６ｂの自転と、その研磨プレ
ート６ａ，６ｂを支承する研磨プレート押え機構３１の
公転を同時に行っているため、ウェハー１面内の研磨プ
レートが略均一に維持された。First, the wafer 1 to be polished is placed on the wafer holder 2 with its central axis aligned with the wafer holder rotation axis 3, and the wafer holder 2 is rotated at 20 rpm, and slurry is added from above. An abrasive containing a mixture of slurry 4 such as silica and KOH is applied to the surface of the wafer 1 through a supply pipe (not shown) at a supply flow rate of 225 ml / min. After that, the polishing plates 6a and 6b are attached to the rotary shafts 7a and 7b.
The wafer 1 is gradually lowered and brought into contact with each other while rotating at 30 rpm with b as the center, and polishing (polishing) of the wafer 1 is started with a pressing force of 5 × 10 3 Pa.
During polishing of the wafer 1, the polishing plates 6a and 6b perform both rotation operations of rotation by rotation of the rotating shafts 7a and 7b and revolution of moving around the surface of the wafer 1 by rotation of the rotating shaft 30 of the polishing plate pressing mechanism 31. While simultaneously performing the polishing, the polishing of the first surface of the wafer was completed. In this polishing apparatus, the above-described rotation of the polishing plates 6a and 6b and the revolution of the polishing plate pressing mechanism 31 that supports the polishing plates 6a and 6b are simultaneously performed, so that the polishing plate in the wafer 1 surface is kept substantially uniform. Was done.
【００３３】実施例２ 本実施例は、請求項２に示した基板研磨装置の実施例で
ある。Embodiment 2 This embodiment is an embodiment of the substrate polishing apparatus shown in claim 2.
【００３４】図２は本発明の請求項２に係る基板研磨装
置の実施例模式断面図である。図２に示した基板研磨装
置によれば、ウェハー１を表面に配したウェハー保持台
２の下方に研磨パッド５を表面に配した研磨プレート６
が配されており、その研磨プレート６を複数の研磨圧力
コントロールゾーン３６ａ〜３６ｉに区分け（分割）し
て、それぞれのゾーンにぞれぞれ独立してばね３７ａ〜
３７ｉを設けて、研磨圧力を一定にする機構を具備した
構成となっている。この装置ではウェハー１が研磨パッ
ド５に接触していない場合には研磨圧力がかからない。
本実施例では、各研磨圧力コントロールゾーン３６ａ〜
３６ｉで研磨圧力を一定にする機構は、研磨パッド５の
上下矢印方向の動作可能範囲をばね３７ａ〜３７ｉを介
して限定する機構を付加してその機構を実現している。FIG. 2 is a schematic sectional view of an embodiment of a substrate polishing apparatus according to claim 2 of the present invention. According to the substrate polishing apparatus shown in FIG. 2, the polishing plate 6 having the polishing pad 5 on the surface below the wafer holding table 2 having the wafer 1 on the surface.
Is arranged, and the polishing plate 6 is divided (divided) into a plurality of polishing pressure control zones 36a to 36i, and the springs 37a to 37i are independently provided in the respective zones.
37i is provided so that the polishing pressure is kept constant. In this apparatus, no polishing pressure is applied when the wafer 1 is not in contact with the polishing pad 5.
In this embodiment, each polishing pressure control zone 36a-
The mechanism for making the polishing pressure constant at 36i is realized by adding a mechanism for limiting the movable range of the polishing pad 5 in the up and down arrow directions via the springs 37a to 37i.
【００３５】本実施例のウェハー保持台２の回転軸３の
回転数は１５〜３０ｒｐｍ、研磨プレート６の回転軸３
２の回転数は２０〜５０ｒｐｍ、研磨時のウェハーへの
加圧力Ｆは５〜６×１０3Ｐａとした。The rotation speed of the rotating shaft 3 of the wafer holding table 2 of this embodiment is 15 to 30 rpm, and the rotating shaft 3 of the polishing plate 6 is
The rotation speed of No. 2 was 20 to 50 rpm, and the pressing force F on the wafer during polishing was 5 to 6 × 10 3 Pa.
【００３６】以下、上記構成の研磨装置を用いてウェハ
ーを研磨する方法を説明する。A method of polishing a wafer using the polishing apparatus having the above structure will be described below.
【００３７】研磨すべきウェハー１をウェハー保持台２
上にその中心軸を回転軸３と一致させるように載置し、
複数の研磨圧力コントロールゾーン３６ａ〜３６ｉを有
する研磨プレート６を約２５ｒｐｍの回転数で回転させ
る。その上方からスラリー供給管を介してスラリー例え
ばシリカ、ＫＯＨを混合した研磨材を供給流量２２５ｍ
ｌ／分で研磨パッド５面に塗布する。次に、ウェハー１
を載置したウェハー保持台２を約３０ｒｐｍの回転数で
回転させながら研磨プレート６に徐々に降下し接触さ
せ、５×１０3Ｐａの加圧力でウェハー１の研磨を開始
する。ウェハー１の研磨時、上記ウェハー１に対する加
圧力が一定となるように、加圧力一定保持機構により保
持されながら研磨処理が完了した。The wafer 1 to be polished is placed on the wafer holding table 2
Place it so that its central axis matches the axis of rotation 3,
The polishing plate 6 having the plurality of polishing pressure control zones 36a to 36i is rotated at a rotation speed of about 25 rpm. A slurry of a mixture such as silica and KOH is supplied from above through a slurry supply pipe to supply a flow rate of 225 m.
Apply to the polishing pad 5 surface at 1 / min. Next, wafer 1
The wafer holding table 2 on which is mounted is gradually lowered and brought into contact with the polishing plate 6 while rotating at a rotation speed of about 30 rpm, and polishing of the wafer 1 is started with a pressing force of 5 × 10 3 Pa. During the polishing of the wafer 1, the polishing process was completed while the wafer 1 was held by a constant pressure holding mechanism so that the pressure applied to the wafer 1 was constant.
【００３８】このように、加圧力を略一定にし得る研磨
プレートおよび研磨パッドのゾーン分割機構を有する実
施例により、研磨パッドの歪みによって生じる研磨圧力
の増加を抑制することができる。従って、本実施例によ
るポリッシュレートの面内均一性が向上する。As described above, according to the embodiment having the polishing plate and the zone dividing mechanism of the polishing pad capable of making the applied pressure substantially constant, the increase of the polishing pressure caused by the distortion of the polishing pad can be suppressed. Therefore, the in-plane uniformity of the polish rate according to this embodiment is improved.
【００３９】実施例３ 本実施例は請求項３に示した基板研磨装置の実施例であ
る。図３はその研磨装置の模式断面図である。図３に示
した研磨装置は、上記図２に関する装置における研磨圧
力コントロールゾーンを同心円状に分割した構成とした
ものである。すなわち、研磨パッド５の下方には円形の
研磨圧力内部コントロールゾーン４０と、その内部コン
トロールゾーン４０の周囲に上面がドーナツ状の同心の
研磨圧力外部コントロールゾーン４１を有する研磨プレ
ート６が設けられている。本実施例ではウェハー保持台
２と研磨プレート６が同心配置されており、ウェハー保
持台２上に載置されたウェハー１は内部コントロールゾ
ーン４０の全てと外部コントロールゾーン４１の少なく
とも一部を被う。各研磨圧力コントロールゾーン４０，
４１の裏側には所定本数のばね４０ａ，４１ａがそれぞ
れ設けられており、所定の部位に固定されている。各研
磨圧力コントロールゾーン４０，４１はそのばねの伸縮
により上下矢印方向に可動し得るように構成されてい
る。本実施例ではばねの本数は研磨圧力内部コントロー
ルゾーンは中央に１ヶ所、研磨圧力外部コントロールゾ
ーンは６ヶ所設けられている。Embodiment 3 This embodiment is an embodiment of the substrate polishing apparatus shown in claim 3. FIG. 3 is a schematic sectional view of the polishing apparatus. The polishing apparatus shown in FIG. 3 has a configuration in which the polishing pressure control zone in the apparatus relating to FIG. 2 is divided into concentric circles. That is, below the polishing pad 5, there is provided a polishing plate 6 having a circular polishing pressure internal control zone 40 and a concentric polishing pressure external control zone 41 having a donut-shaped upper surface around the internal control zone 40. . In this embodiment, the wafer holder 2 and the polishing plate 6 are concentrically arranged, and the wafer 1 placed on the wafer holder 2 covers all of the internal control zone 40 and at least a part of the external control zone 41. . Each polishing pressure control zone 40,
A predetermined number of springs 40a and 41a are provided on the back side of 41, respectively, and are fixed to predetermined portions. The polishing pressure control zones 40 and 41 are configured to be movable in the up and down arrow directions by expansion and contraction of their springs. In this embodiment, the number of springs is one in the central control zone for polishing pressure and six in the external control zone for polishing pressure.
【００４０】以下、上記同心円状の研磨圧力コントロー
ルゾーンを有する研磨装置を用いてウェハーを研磨する
方法を説明する。A method of polishing a wafer using the polishing apparatus having the concentric polishing pressure control zone will be described below.
【００４１】実施例２と同様に、研磨すべきウェハー１
をウェハー保持台２上に載置し、同心円状の研磨圧力コ
ントロールゾーン４０，４１を有する研磨プレート６を
約１０〜３０ｒｐｍの回転数で回転させる。また、実施
例２と同様に、スラリー供給管を介して研磨材を供給流
量２２５ｍｌ／分で研磨パッド５面に塗布する。次に、
ウェハー１を載置したウェハー保持台２を約１５ｒｐｍ
の回転数で回転させながら研磨プレート６に徐々に降下
させ接触させ、５×１０3Ｐａの加圧力でウェハー１の
研磨を開始する。ウェハー１の研磨時、上記ウェハー１
に対する加圧力が一定となるように研磨圧力内部コント
ロールゾーン４０と研磨圧力外部コントロールゾーン４
１で保持しながら研磨処理を完了させた。Wafer 1 to be polished as in Example 2
Is placed on the wafer holder 2 and the polishing plate 6 having the concentric polishing pressure control zones 40 and 41 is rotated at a rotation speed of about 10 to 30 rpm. Further, as in Example 2, the abrasive is applied to the surface of the polishing pad 5 through the slurry supply pipe at a supply flow rate of 225 ml / min. next,
Wafer holder 2 on which wafer 1 is placed is about 15 rpm
The polishing plate 6 is gradually lowered and brought into contact with the polishing plate 6 while being rotated at a rotation speed of, and polishing of the wafer 1 is started with a pressing force of 5 × 10 3 Pa. When polishing the wafer 1, the above wafer 1
Polishing pressure internal control zone 40 and polishing pressure external control zone 4 so that the pressure applied to
The polishing process was completed while holding at 1.
【００４２】本実施例でも実施例１，２と同様にポリッ
シュレートの面内均一性をより向上させることができ
た。Also in this example, as in Examples 1 and 2, the in-plane uniformity of the polish rate could be further improved.
【００４３】実施例４ 本実施例は本発明の請求項４に示した基板保持台を使用
した研磨装置の実施例を示す。Embodiment 4 This embodiment shows an embodiment of a polishing apparatus using the substrate holding table according to claim 4 of the present invention.
【００４４】図４は本発明の請求項４に係る基板保持台
の模式断面図である。図４に示した基板保持台によれ
ば、図６に示した従来の研磨装置において、ウェハーを
載置するウェハー保持台表面にウェハー表面が丁度平坦
に納まるようなウェハーの厚さ分の深さを有する凹部２
ａを配設する。FIG. 4 is a schematic sectional view of a substrate holder according to claim 4 of the present invention. According to the substrate holder shown in FIG. 4, in the conventional polishing apparatus shown in FIG. 6, the depth corresponding to the thickness of the wafer is such that the wafer surface is just flat on the surface of the wafer holder on which the wafer is placed. Recess 2 having
Arrange a.
【００４５】本実施例において、例えばウェハー１とし
てサイズが直径２００ｍｍ、厚さが８００μｍのものを
用いる場合は、ウェハー保持台２の凹部２ａのサイズは
直径を２００ｍｍ＋（０．２ｍｍ±５０％）とし、深さ
を８００μｍ−（１０μｍ±５０％）に設定する。上記
以外の研磨条件は従来装置（図６）で用いた条件と同様
の条件を用いることができるが、上記実施例と組み合わ
せて用いることもできる。本実施例の場合、ウェハー１
はウェハー保持台２表面の凹部２ａに表面が全体的に平
坦に収納されているため、ウェハーとウェハー保持台の
段差がほぼなくなり、ウェハー１の周辺部に生じた研磨
パッドの変形歪みからくるウェハー表面にかかる研磨圧
力の増大を抑制することができる。In this embodiment, for example, when the wafer 1 having a diameter of 200 mm and a thickness of 800 μm is used, the size of the recess 2a of the wafer holder 2 is 200 mm + (0.2 mm ± 50%). , And the depth is set to 800 μm− (10 μm ± 50%). Polishing conditions other than the above can be the same as those used in the conventional apparatus (FIG. 6), but can also be used in combination with the above embodiment. In the case of this embodiment, the wafer 1
Since the entire surface of the wafer is held flat in the recess 2a on the surface of the wafer holder 2, there is almost no step between the wafer and the wafer holder, and the wafer is caused by the deformation distortion of the polishing pad generated in the peripheral portion of the wafer 1. It is possible to suppress an increase in polishing pressure applied to the surface.
【００４６】実施例５ 本実施例は請求項５に示した基板保持台の実施例であ
り、図５はその基板保持台の模式断面図である。本実施
例は、実施例４の研磨装置のウェハー保持台において、
ウェハー保持台に設けた凹部の深さ調整機能を具備した
例である。図５に示されたウェハー保持台によれば、ウ
ェハー１を載置するウェハー載置台４５とその周辺に上
下可動なウェハー凹部調整側壁部材４６が設けられ、そ
のウェハー載置台４５とウェハー凹部調整側壁部材４６
とでウェハー（基板）保持台を構成している。当然のこ
とながら、ウェハー１が載置されるウェハー載置台４５
の表面はウェハーの直径と略同一直径の円形状であり、
ウェハー凹部調整側壁部材４６はウェハー載置台４５と
同心のドーナツ状を有する。ウェハー載置台４５の裏面
には凹部深さ調整用ねじ４８が設けられ、その凹部深さ
調整用ねじ４８に嵌合する調整ねじ押え金具４９がウェ
ハー凹部調整側壁部材４６の裏面に取り付けられてい
る。このようなウェハー保持台の構成により、凹部深さ
調整用ねじ４８の回転によりウェハー凹部調整側壁部材
４６を上下させることにより自由にウェハーの深さに対
応した凹部を形成することができる。本実施例は一例と
して凹部深さ調整用ねじ４８を用いた凹部形成ウェハー
保持装置であるが、本発明の主旨に反しない限り如何な
る方法でもよい。Embodiment 5 This embodiment is an embodiment of the substrate holder shown in claim 5, and FIG. 5 is a schematic sectional view of the substrate holder. In this embodiment, in the wafer holding table of the polishing apparatus of the fourth embodiment,
This is an example having a function of adjusting the depth of the concave portion provided on the wafer holding table. According to the wafer holding table shown in FIG. 5, a wafer mounting table 45 on which the wafer 1 is mounted and a vertically movable wafer recess adjusting side wall member 46 are provided, and the wafer mounting table 45 and the wafer recess adjusting side wall are provided. Member 46
And constitute a wafer (substrate) holder. As a matter of course, the wafer mounting table 45 on which the wafer 1 is mounted
The surface of is a circular shape with a diameter approximately the same as the diameter of the wafer,
The wafer recess adjusting side wall member 46 has a donut shape that is concentric with the wafer mounting table 45. A recess depth adjusting screw 48 is provided on the back surface of the wafer mounting table 45, and an adjusting screw pressing metal fitting 49 that fits into the recess depth adjusting screw 48 is attached to the back surface of the wafer recess adjusting side wall member 46. . With such a structure of the wafer holder, by rotating the recess depth adjusting screw 48, the wafer recess adjusting side wall member 46 is moved up and down to freely form a recess corresponding to the depth of the wafer. The present embodiment is an example of a recess forming wafer holding device using the recess depth adjusting screw 48, but any method may be used without departing from the spirit of the present invention.
【００４７】ウェハーの厚さはウェハーの種類によって
異なるが、本実施例を用いればウェハーの種類に応じて
最適な研磨状態とすることができ、従ってどのような厚
さのウェハーでも均一なポリッシュレートを得ることが
できる。Although the thickness of the wafer varies depending on the type of the wafer, this embodiment makes it possible to obtain an optimum polishing state according to the type of the wafer, and thus a uniform polishing rate can be obtained for a wafer of any thickness. Can be obtained.
【００４８】なお、本実施例では特に示してないが、請
求項４および５に示した基板保持台を、請求項１〜３に
示した基板研磨装置に有効に利用することができる。Although not particularly shown in this embodiment, the substrate holders according to claims 4 and 5 can be effectively used for the substrate polishing apparatus according to claims 1 to 3.
【００４９】[0049]
【発明の効果】以上説明したように本発明によれば、ポ
リッシュレートのウェハー面内の均一性を向上させるこ
とができる。特に、請求項１の発明によれば、研磨プレ
ートが小さくなっているため、研磨材であるスラリーの
分布を研磨パッド上で向上させることができ、しかも基
板研磨装置そのものの大きさを縮小することが可能とな
り、装置コストを低減することができる。As described above, according to the present invention, the uniformity of the polishing rate within the wafer surface can be improved. In particular, according to the first aspect of the invention, since the polishing plate is small, the distribution of the slurry as the polishing material can be improved on the polishing pad, and the size of the substrate polishing apparatus itself can be reduced. It is possible to reduce the device cost.
【００５０】また特に請求項２および３の発明によれ
ば、研磨プレートに設けた複数の各領域の圧力が所定の
圧力にコントロールすることができるため、研磨プレー
トのポリッシュレートの分散を最小限に抑制することが
できる。Further, according to the inventions of claims 2 and 3, since the pressure in each of the plurality of regions provided in the polishing plate can be controlled to a predetermined pressure, the dispersion of the polishing rate of the polishing plate is minimized. Can be suppressed.
【００５１】更にまた、特に請求項３および４の発明に
よれば、ウェハー保持台（プレート）を少なくともウェ
ハーより大きくし、その保持台にウェハーの厚さに対応
した凹部（溝）を形成し、そのウェハー周辺における押
え付け圧力の増大を防止でき、ポリッシュレートの面内
分布が向上する。Furthermore, in particular, according to the inventions of claims 3 and 4, the wafer holder (plate) is made larger than at least the wafer, and a recess (groove) corresponding to the thickness of the wafer is formed on the holder. It is possible to prevent the pressing pressure from increasing around the wafer and improve the in-plane distribution of the polish rate.
【００５２】また、本発明の基板保持台は従来の基板保
持台の容易な改造によって実現することができるためコ
ストも少なくすませることができる。Further, since the substrate holder of the present invention can be realized by easily modifying the conventional substrate holder, the cost can be reduced.
【図１】本発明に係る基板研磨装置の第１実施例を示す
模式断面図である。FIG. 1 is a schematic sectional view showing a first embodiment of a substrate polishing apparatus according to the present invention.
【図２】本発明に係る基板研磨装置の第２実施例を示す
模式断面図である。FIG. 2 is a schematic sectional view showing a second embodiment of the substrate polishing apparatus according to the present invention.
【図３】本発明に係る基板研磨装置の第３実施例を示す
模式断面図である。FIG. 3 is a schematic sectional view showing a third embodiment of the substrate polishing apparatus according to the present invention.
【図４】本発明に係る基板保持台の第１実施例を示す模
式断面図である。FIG. 4 is a schematic sectional view showing a first embodiment of the substrate holding table according to the present invention.
【図５】本発明に係る基板保持台の第２実施例を示す模
式断面図である。FIG. 5 is a schematic sectional view showing a second embodiment of the substrate holding table according to the present invention.
【図６】従来の基板研磨装置の模式断面図である。FIG. 6 is a schematic sectional view of a conventional substrate polishing apparatus.
【図７】トレンチアイソレーション工程断面図である。FIG. 7 is a sectional view of a trench isolation process.
【符号の説明】 １ ウェハー（基板） ２ ウェハー保持台 ３ ウェハー保持台回転軸 ４ スラリー ５，５ａ，５ｂ 研磨パッド ６，６ａ，６ｂ 研磨プレート ７，７ａ，７ｂ 研磨プレート回転軸 ８ スラリー導入管 １０ ウェハー保持装置 １１ ウェハー研磨装置 ２１ 半導体基板 ２２ パッド酸化膜 ２３ シリコン窒化膜 ２４ 熱酸化膜 ２５ 溝（トレンチ） ２６，２６ａ 層間膜 ３０ 研磨プレート主回転軸 ３１ 研磨プレート押え機構 ３６ａ，３６ｂ，・・・，３６ｉ 研磨圧力コントロー
ルゾーン ３７ａ，３７ｂ，・・・，３７ｉ ばね[Explanation of reference numerals] 1 wafer (substrate) 2 wafer holding table 3 wafer holding table rotating shaft 4 slurry 5,5a, 5b polishing pad 6,6a, 6b polishing plate 7,7a, 7b polishing plate rotating shaft 8 slurry introducing pipe 10 Wafer holding device 11 Wafer polishing device 21 Semiconductor substrate 22 Pad oxide film 23 Silicon nitride film 24 Thermal oxide film 25 Groove (trench) 26, 26a Interlayer film 30 Polishing plate main rotating shaft 31 Polishing plate pressing mechanism 36a, 36b, ... , 36i Polishing pressure control zone 37a, 37b, ..., 37i Spring
Claims (5)
／又は該基板上に形成した材料膜の少なくとも一部を被
研磨部として研磨する基板研磨装置において、 前記被研磨部を研磨する研磨プレートの直径が該基板の
直径の１／２以下であり、且つ該研磨プレートを一つの
基板に対して複数具備してなることを特徴とする基板研
磨装置。1. A substrate polishing apparatus for supporting a substrate on a support base and polishing at least part of a material film formed on the surface of the substrate and / or the substrate as a polished portion, the polished portion being polished. A substrate polishing apparatus, wherein the polishing plate has a diameter of ½ or less of the diameter of the substrate, and a plurality of polishing plates are provided for one substrate.
／又は該基板上に形成した材料膜の少なくとも一部を被
研磨部として研磨する基板研磨装置において、 前記被研磨部を研磨する研磨プレートを複数の領域に分
け、前記基板への前記研磨プレートの押し付け圧力を各
領域においてコントロール可能にせしめたことを特徴と
する基板研磨装置。2. A substrate polishing apparatus for supporting a substrate on a support base and polishing at least a part of a material film formed on the substrate surface and / or the substrate as a polished portion, wherein the polished portion is polished. A substrate polishing apparatus characterized in that a polishing plate is divided into a plurality of regions, and a pressing pressure of the polishing plate onto the substrate can be controlled in each region.
なることを特徴とする請求項２記載の基板研磨装置。3. The substrate polishing apparatus according to claim 2, wherein the plurality of regions are arranged concentrically.
持台であって、 前記基板保持台に該基板を収容するための凹部を設けた
ことを特徴とする基板保持台。4. A substrate holding table for holding a substrate as a material to be polished, wherein the substrate holding table is provided with a recess for accommodating the substrate.
して変えられるように構成されたことを特徴とする請求
項４記載の基板保持台。5. The substrate holder according to claim 4, wherein the depth of the recess is changed according to the thickness of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12130093A JPH06333891A (en) | 1993-05-24 | 1993-05-24 | Substrate polishing apparatus and substrate holding table |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12130093A JPH06333891A (en) | 1993-05-24 | 1993-05-24 | Substrate polishing apparatus and substrate holding table |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06333891A true JPH06333891A (en) | 1994-12-02 |
Family
ID=14807847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12130093A Pending JPH06333891A (en) | 1993-05-24 | 1993-05-24 | Substrate polishing apparatus and substrate holding table |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06333891A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19652839A1 (en) * | 1996-07-09 | 1998-01-22 | Lg Semicon Co Ltd | Level sensor for chemical-mechanical polishing device for semiconductor wafer |
| US5762539A (en) * | 1996-02-27 | 1998-06-09 | Ebara Corporation | Apparatus for and method for polishing workpiece |
| WO1999000831A1 (en) * | 1997-06-30 | 1999-01-07 | Hitachi, Ltd. | Method of manufacturing semiconductor devices |
| US5985090A (en) * | 1995-05-17 | 1999-11-16 | Ebara Corporation | Polishing cloth and polishing apparatus having such polishing cloth |
| US6015337A (en) * | 1995-07-20 | 2000-01-18 | Ebara Corporation | Polishing apparatus |
| KR100283479B1 (en) * | 1998-01-10 | 2001-04-02 | 한신혁 | Polishing device for semiconductor device |
| US6234876B1 (en) | 1997-09-01 | 2001-05-22 | United Microelectronics Corp | Chemical-mechanical polish machines and fabrication process using the same |
| KR100342845B1 (en) * | 1999-11-12 | 2002-07-10 | 박철호 | The equipment grinding system ang connestion of small size PCB bold |
| USRE38854E1 (en) | 1996-02-27 | 2005-10-25 | Ebara Corporation | Apparatus for and method for polishing workpiece |
| US6998013B2 (en) * | 2002-10-10 | 2006-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd | CMP apparatus polishing head with concentric pressure zones |
| JP2011079131A (en) * | 2009-10-08 | 2011-04-21 | Lg Chem Ltd | Float glass polishing system and method |
| US9060452B2 (en) | 2009-02-06 | 2015-06-16 | Lg Chem, Ltd. | Method for manufacturing insulated conductive pattern and laminate |
| KR20170034404A (en) * | 2014-07-18 | 2017-03-28 | 어플라이드 머티어리얼스, 인코포레이티드 | Modifying substrate thickness profiles |
| JP2018051679A (en) * | 2016-09-28 | 2018-04-05 | 株式会社ディスコ | Polishing unit |
| CN110216577A (en) * | 2019-06-14 | 2019-09-10 | 吴丰平 | A kind of grinding wheel self-adaptive regulating for Wafer grinder |
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1993
- 1993-05-24 JP JP12130093A patent/JPH06333891A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985090A (en) * | 1995-05-17 | 1999-11-16 | Ebara Corporation | Polishing cloth and polishing apparatus having such polishing cloth |
| US6015337A (en) * | 1995-07-20 | 2000-01-18 | Ebara Corporation | Polishing apparatus |
| US5762539A (en) * | 1996-02-27 | 1998-06-09 | Ebara Corporation | Apparatus for and method for polishing workpiece |
| USRE39471E1 (en) * | 1996-02-27 | 2007-01-16 | Ebara Corporation | Apparatus for and method for polishing workpiece |
| USRE38854E1 (en) | 1996-02-27 | 2005-10-25 | Ebara Corporation | Apparatus for and method for polishing workpiece |
| USRE38826E1 (en) | 1996-02-27 | 2005-10-11 | Ebara Corporation | Apparatus for and method for polishing workpiece |
| DE19652839C2 (en) * | 1996-07-09 | 2002-04-18 | Lg Semicon Co Ltd | Level sensor device and method for semiconductor wafers for a chemical mechanical polishing device |
| DE19652839A1 (en) * | 1996-07-09 | 1998-01-22 | Lg Semicon Co Ltd | Level sensor for chemical-mechanical polishing device for semiconductor wafer |
| WO1999000831A1 (en) * | 1997-06-30 | 1999-01-07 | Hitachi, Ltd. | Method of manufacturing semiconductor devices |
| US6234876B1 (en) | 1997-09-01 | 2001-05-22 | United Microelectronics Corp | Chemical-mechanical polish machines and fabrication process using the same |
| US6293850B1 (en) | 1997-09-01 | 2001-09-25 | United Microelectronics Corp. | Chemical-mechanical polish machines and fabrication process using the same |
| US6241582B1 (en) | 1997-09-01 | 2001-06-05 | United Microelectronics Corp. | Chemical mechanical polish machines and fabrication process using the same |
| KR100283479B1 (en) * | 1998-01-10 | 2001-04-02 | 한신혁 | Polishing device for semiconductor device |
| KR100342845B1 (en) * | 1999-11-12 | 2002-07-10 | 박철호 | The equipment grinding system ang connestion of small size PCB bold |
| US6998013B2 (en) * | 2002-10-10 | 2006-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd | CMP apparatus polishing head with concentric pressure zones |
| US9060452B2 (en) | 2009-02-06 | 2015-06-16 | Lg Chem, Ltd. | Method for manufacturing insulated conductive pattern and laminate |
| US8602848B2 (en) | 2009-10-08 | 2013-12-10 | Lg Chem, Ltd. | Method and system for polishing float glass |
| JP2011079131A (en) * | 2009-10-08 | 2011-04-21 | Lg Chem Ltd | Float glass polishing system and method |
| KR20170034404A (en) * | 2014-07-18 | 2017-03-28 | 어플라이드 머티어리얼스, 인코포레이티드 | Modifying substrate thickness profiles |
| JP2017527107A (en) * | 2014-07-18 | 2017-09-14 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Adjusting the substrate thickness profile |
| JP2018051679A (en) * | 2016-09-28 | 2018-04-05 | 株式会社ディスコ | Polishing unit |
| CN110216577A (en) * | 2019-06-14 | 2019-09-10 | 吴丰平 | A kind of grinding wheel self-adaptive regulating for Wafer grinder |
| CN110216577B (en) * | 2019-06-14 | 2021-06-18 | 蒋祥初 | Grinding wheel self-adaptive adjusting device for silicon wafer thinning machine |
| JP2021045806A (en) * | 2019-09-17 | 2021-03-25 | 株式会社ディスコ | Polishing device |
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