KR20010064398A - Chemical mechanical polishing method - Google Patents
Chemical mechanical polishing method Download PDFInfo
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- KR20010064398A KR20010064398A KR1019990064588A KR19990064588A KR20010064398A KR 20010064398 A KR20010064398 A KR 20010064398A KR 1019990064588 A KR1019990064588 A KR 1019990064588A KR 19990064588 A KR19990064588 A KR 19990064588A KR 20010064398 A KR20010064398 A KR 20010064398A
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- polishing
- hardness
- polishing pad
- wafer
- chemical mechanical
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- 238000005498 polishing Methods 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000126 substance Substances 0.000 title claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000007517 polishing process Methods 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 3
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 3
- 239000011229 interlayer Substances 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 7
- 239000003607 modifier Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 230000002040 relaxant effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 42
- 239000002699 waste material Substances 0.000 abstract description 3
- 239000006227 byproduct Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
본 발명은 반도체 소자에서 막들간의 절연을 위한 층간 절연막을 평탄화하기 위해 사용되는 화학기계적 연마(Chemical Mechanical Polishing:CMP라 영문표기함) 방법에 관한 것이다.The present invention relates to a chemical mechanical polishing (CMP) method used to planarize an interlayer insulating film for insulating between films in a semiconductor device.
다층 배선 구조를 갖는 반도체 소자에서, 각 배선간의 절연을 위해 배선 형성전에 하부 배선상에 층간 절연막이 증착되고, 이 층간 절연막상에 상부 배선이 형성된다. 이때, 하부 배선의 표면 요철 때문에 발생하는 상부 배선의 단선 문제, 배선 사이에 쇼트 문제를 최소화하기 위하여, 상부 배선을 층간 절연막상에 형성하기 전에, 반드시 층간 절연막을 평탄화시키는 공정이 실시된다.In a semiconductor device having a multi-layered wiring structure, an interlayer insulating film is deposited on the lower wiring before the wiring is formed for insulation between the respective wirings, and an upper wiring is formed on the interlayer insulating film. At this time, in order to minimize the disconnection problem of the upper wiring caused by the surface irregularities of the lower wiring and the short problem between the wirings, a process of necessarily flattening the interlayer insulating film is performed before the upper wiring is formed on the interlayer insulating film.
이러한 평탄화 공정에서 주로 사용되는 방법이 슬러리(slurry)를 이용해서 웨이퍼를 연마 패드에 연마하여 층간 절연막의 일정 두께를 제거하므로써, 평탄화를 이루는 화학기계적 연마법이다. 즉, 웨이퍼를 척에 고정시키고, 연마 패드와 척을 동시에 회전시키면서, 그 사이에 슬러리를 공급하여 웨이퍼를 연마 패드에 마찰시켜서 절연막을 연마하는 방법이다. 이러한 화학기계적 연마법으로 평탄화 공정을 실시하는데 있어서, 가장 중요하고도 어려운 문제가 연마 두께를 제어하는 것이다.A method mainly used in such a planarization process is a chemical mechanical polishing method for achieving planarization by removing a predetermined thickness of an interlayer insulating film by polishing a wafer on a polishing pad using a slurry. In other words, the wafer is fixed to the chuck, the polishing pad and the chuck are rotated at the same time, a slurry is supplied therebetween, and the wafer is rubbed against the polishing pad to polish the insulating film. In carrying out the planarization process by such a chemical mechanical polishing method, the most important and difficult problem is controlling the polishing thickness.
이러한 용도로 사용되는 화학기계적 연마 장치의 구성을 개략적으로 설명하면 다음과 같다. 연마 패드가 구비된 연마판은 회전축으로 지지되어 있어서, 그 상부에 웨이퍼가 안치되도록 되어 있다. 웨이퍼를 압착하는 판이 연마판의 상부에 배치되어서 역시 회전축으로 지지되어 있다. 한편, 슬러리를 웨이퍼상으로 공급하는 노즐이 연마판의 일측 상부에 배치되어 있다.The configuration of the chemical mechanical polishing apparatus used for this purpose is as follows. The polishing plate provided with the polishing pad is supported by the rotating shaft, so that the wafer is placed thereon. A plate for pressing the wafer is arranged on the abrasive plate and is also supported by the rotation axis. On the other hand, the nozzle which supplies a slurry on a wafer is arrange | positioned at the upper side of one side of an abrasive plate.
상기와 같이 구성되어서, 노즐로부터 슬러리가 공급되는 상태에서, 동일 방향으로 회전되는 연마판과 압착판에 의해 웨이퍼가 연마되므로써, 절연막이 평탄화되도록 되어 있다.It is comprised as mentioned above, and the insulating film is planarized by grind | polishing a wafer by the grinding | polishing plate and a compression plate which rotate in the same direction in the state in which the slurry is supplied from a nozzle.
그런데, 연마 장치로 투입되는 웨이퍼는 연속적이지 않다. 즉, 웨이퍼는 카세트에 수납된 상태로 운반되므로, 카세트에서 웨이퍼를 반출하여 연마 장치로 반입시키고, 연마 공정이 완료된 후에 다시 웨이퍼를 카세트에 수납시키도록 되어 있기 때문에, 이러한 반입 및 반출 동작중에 연마 동작은 중단된다.However, wafers fed into the polishing apparatus are not continuous. That is, since the wafer is transported in the cassette, the wafer is taken out from the cassette and brought into the polishing apparatus, and after the polishing process is completed, the wafer is put back into the cassette. Is stopped.
이로 인하여, 연마 패드는 대기 상태에 있는 시간이 있는데, 이 대기 시간중에 연마 패드는 연마 동작시보다 경도가 높아지게 된다. 따라서, 연마율은 대략 3,000Å 정도로 설정되는데, 제일 먼저 연마 장치에 투입되는 웨이퍼는 설정된 연마율보다 200 내지 300Å 정도가 두꺼운 3,200 내지 3,300Å 연마율을 보이고 있다.As a result, there is a time when the polishing pad is in the standby state, during which the polishing pad becomes harder than during the polishing operation. Therefore, the polishing rate is set to about 3,000 GPa, the wafer first put into the polishing apparatus shows a 3,200 to 3,300 GPa polishing rate of about 200 to 300 GPa thicker than the set polishing rate.
모든 웨이퍼의 연마 두께는 동일하게 유지되어야 하므로, 상기된 현상을 방지하기 위해서, 종래에는 실제로 공정중인 웨이퍼를 먼저 투입하지 않고, 연마 패드의 경도를 공정 조건으로 낮추기 위한 더미 웨이퍼를 사전에 투입하였다. 즉, 대기 상태에 있던 연마 패드가 더미 웨이퍼를 먼저 연마하게 되므로써, 그의 경도가 낮아지게 되고, 이러한 조건이 된 후에 실제 웨이퍼가 투입되어서 연마 공정이 이루어지게 된다.Since the polishing thicknesses of all the wafers must be kept the same, in order to prevent the above-mentioned phenomenon, conventionally, a dummy wafer for lowering the hardness of the polishing pad to the processing conditions is put in advance without actually putting the wafer in process. That is, since the polishing pad in the standby state first polishes the dummy wafer, its hardness is lowered, and after this condition, the actual wafer is put in and the polishing process is performed.
따라서, 종래에는 더미 웨이퍼가 필요하기 때문에, 고가의 웨이퍼 한 장이 낭비되는 문제점을 안고 있었다.Therefore, conventionally, since a dummy wafer is required, there is a problem in that one expensive wafer is wasted.
본 발명은 상기된 종래 연마 방법이 안고 있는 문제점을 해소하기 위해 안출된 것으로서, 더미 웨이퍼를 사용하지 않고도 대기 상태에 있던 연마 패드의 경도를 공정 조건으로 낮아질 수 있도록 하여, 웨이퍼 낭비를 방지할 수 있는 화학기계적 연마 방법을 제공하는데 목적이 있다.The present invention has been made to solve the problems of the conventional polishing method described above, it is possible to lower the hardness of the polishing pad in the standby state to the process conditions without using a dummy wafer, thereby preventing wafer waste It is an object to provide a chemical mechanical polishing method.
도 1은 본 발명에 따른 연마 방법을 설명하기 위해 화학기계적 연마 장치의 전체를 나타낸 평면도.1 is a plan view showing an entire chemical mechanical polishing apparatus for explaining a polishing method according to the present invention.
- 도면의 주요 부분에 대한 부호의 설명 --Explanation of symbols for the main parts of the drawing-
10 ; 세정 유니트 20 ; 반송 유니트10; Washing unit 20; Conveying unit
30 ; 연마 유니트 31 ; 연마 패드30; Polishing unit 31; Polishing pad
상기와 같은 목적을 달성하기 위해, 본 발명에 따른 연마 방법은 다음과 같다.In order to achieve the above object, the polishing method according to the present invention is as follows.
웨이퍼를 연마 패드가 구비된 연마 장치로 투입하기 전에, 대기 상태로 경도가 높아진 연마 패드를 고압의 경도 완화제를 린스(rinse)하여, 연마 패드의 경도를 낮춘다. 그런 다음, 경도가 낮아진 연마 패드로 슬러리를 이용해서 웨이퍼상에 형성된 층간 절연막을 연마한다.Before the wafer is introduced into the polishing apparatus equipped with the polishing pad, the polishing pad having a high hardness in the atmospheric state is rinsed with a high pressure hardness relaxer to lower the hardness of the polishing pad. Then, the interlayer insulating film formed on the wafer is polished using the slurry with a polishing pad having a lower hardness.
상기된 본 발명의 구성에 의하면, 웨이퍼 투입 전에, 연마 패드를 고압의 경도 완화제로 린스하게 되므로써, 더미 웨이퍼를 사용하지 않고도 연마 패드의 경도를 공정 조건에 맞는 정도로 낮출 수가 있게 된다.According to the above-described configuration of the present invention, since the polishing pad is rinsed with a high pressure hardness relaxer before the wafer is introduced, the hardness of the polishing pad can be lowered to a degree suitable for the process conditions without using a dummy wafer.
이하, 본 발명의 바람직한 실시예를 첨부도면에 의거하여 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 본 발명에 따른 연마 방법을 설명하기 위해 화학기계적 연마 장치의 전체를 나타낸 평면도이다.1 is a plan view showing an entire chemical mechanical polishing apparatus for explaining a polishing method according to the present invention.
도 1에 도시된 바와 같이, 연마 장치는 크게 웨이퍼상에 형성된 층간 절연막을 화학기계적으로 연마하는 연마 유니트(30)와, 연마된 웨이퍼를 세정하기 위한 세정 유니트(10) 및 연마된 웨이퍼를 세정 유니트(10)로 한 장씩 공급하는 반송 유니트(20)로 이루어진다.As shown in FIG. 1, the polishing apparatus includes a polishing unit 30 for chemically polishing an interlayer insulating film formed on a wafer, a cleaning unit 10 for cleaning the polished wafer, and a polishing unit for cleaning the polished wafer. It consists of the conveyance unit 20 which supplies one by one with (10).
연마 유니트(30)는 종래 기술에서 언급된 바와 같이, 연마 패드(31)를 갖는다. 물론, 연마 패드(31) 뿐만이 아니라 슬러리를 공급하기 위한 장치도 연마 유니트(30)에 구비된다.The polishing unit 30 has a polishing pad 31, as mentioned in the prior art. Of course, not only the polishing pad 31 but also an apparatus for supplying a slurry is provided in the polishing unit 30.
여기서, 연마 패드(31)는 웨이퍼 투입전에는 대기 상태로 있게 된다. 따라서, 연마 패드(31)가 공정시보다는 약간 굳어지게 되므로, 그의 경도는 실제 연마 동작시보다는 대기 상태시에 더 높아지게 된다. 더미 웨이퍼를 사용하지 않고도 연마 패드(31)의 경도를 낮추기 위한 본 발명에 따른 연마 방법을 이하에서 상세히설명한다.Here, the polishing pad 31 is in the standby state before the wafer is loaded. Thus, since the polishing pad 31 becomes slightly harder than in the process, its hardness becomes higher in the standby state than in the actual polishing operation. The polishing method according to the present invention for lowering the hardness of the polishing pad 31 without using a dummy wafer is described in detail below.
대기 상태에 있던 연마 패드(31)로 웨이퍼를 투입하기 전에, 먼저 연마 패드(31)를 고압의 경도 완화제로 린스한다. 경도 완화제는 굳어져 있던 연마 패드(31)를 부드럽게 해주므로써, 연마 패드(31)의 경도를 낮추는 역할을 한다. 한편, 경도 완화제로는 특별한 특성을 갖는 물질이 아니라 고압수를 사용하면 된다. 연마 패드(31)에 이물질이 묻지 않게 하기 위해서, 고압수중에서도 특히 탈이온수를 사용하는 것이 바람직하다.Before the wafer is introduced into the polishing pad 31 in the standby state, the polishing pad 31 is first rinsed with a high pressure hardness relaxer. The hardness relaxer softens the hardened polishing pad 31, thereby lowering the hardness of the polishing pad 31. On the other hand, as a hardness relaxer, high pressure water may be used instead of a material having special properties. In order to prevent foreign matter from adhering to the polishing pad 31, it is preferable to use deionized water, especially in high pressure water.
이어서, 이와 같이 경도 완화제로 린스되어서 경도가 낮아진 연마 패드(31)로 웨이퍼를 한 장씩 투입하여 연마 공정을 실시한다. 연마 공정은 종래 기술을 설명하면서 상세히 기술되었으므로, 본 실시예에서는 그에 대한 상세한 설명은 생략한다.Subsequently, the polishing process is performed by introducing wafers one by one into the polishing pad 31 which has been rinsed with the hardness modifier and thus has a low hardness. Since the polishing process has been described in detail while explaining the prior art, the detailed description thereof is omitted in this embodiment.
연마된 웨이퍼는 반송 유니트(20)를 통해서 세정 유니트(10)로 반송되어서, 세정 유니트(10)에서 연마 동작중에 발생된 부산물이 깨끗하게 제거된다.The polished wafer is conveyed to the cleaning unit 10 through the conveying unit 20, so that the by-products generated during the polishing operation in the cleaning unit 10 are cleanly removed.
상기된 바와 같이 본 발명에 의하면, 웨이퍼 투입전에, 대기 상태에 있던 연마 패드를 경도 완화제로 린스하게 되므로써, 더미 웨이퍼를 사용하지 않고도 연마 패드의 경도를 공정 조건에 맞는 정도로 낮출 수가 있게 된다. 따라서, 더미 웨이퍼가 불필요하게 되므로, 웨이퍼 낭비를 방지할 수가 있다.As described above, according to the present invention, since the polishing pad in the standby state is rinsed with a hardness-releasing agent before the wafer is introduced, the hardness of the polishing pad can be lowered to a degree suitable for the process conditions without using a dummy wafer. Therefore, since the dummy wafer is not necessary, wafer waste can be prevented.
한편, 본 발명은 상술한 특정의 바람직한 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능할 것이다.On the other hand, the present invention is not limited to the above-described specific preferred embodiments, anyone of ordinary skill in the art without departing from the gist of the invention claimed in the claims may be variously modified and implemented. will be.
Claims (3)
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| KR1019990064588A KR20010064398A (en) | 1999-12-29 | 1999-12-29 | Chemical mechanical polishing method |
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| KR1019990064588A KR20010064398A (en) | 1999-12-29 | 1999-12-29 | Chemical mechanical polishing method |
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|---|---|---|---|
| KR1019990064588A KR20010064398A (en) | 1999-12-29 | 1999-12-29 | Chemical mechanical polishing method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20010064398A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109794845A (en) * | 2017-11-17 | 2019-05-24 | 台湾积体电路制造股份有限公司 | Process method, cleaning method and the system of processing of semiconductor crystal wafer |
-
1999
- 1999-12-29 KR KR1019990064588A patent/KR20010064398A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109794845A (en) * | 2017-11-17 | 2019-05-24 | 台湾积体电路制造股份有限公司 | Process method, cleaning method and the system of processing of semiconductor crystal wafer |
| US11682552B2 (en) | 2017-11-17 | 2023-06-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for chemical mechanical polishing process |
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| WITN | Withdrawal due to no request for examination |