KR20010051122A - A manufaturing method of semiconductor apparatus - Google Patents

Abstract

PURPOSE: To remove a polysilicon film formed on the surface of a semiconductor device, without damaging its base material layer or leaving etching residues, in a method for manufacturing the semiconductor device. CONSTITUTION: This polysilicon film is formed on the surface of a silicon wafer. The silicon wafer is set in a batch wet processing device. Wet etching for the polysilicon film is started with APM, containing a solution of aqueous ammonia and hydrogen peroxide at a prescribed mixture ratio, as chemical (step 100). In the middle of the wet etching, APM is added to the chemical being using, extending to a prescribed time (steps 104-108). After a prescribed processing time, wet etching using the APM is finished (step 112).

Description

A manufacturing method of a semiconductor device {A MANUFATURING METHOD OF SEMICONDUCTOR APPARATUS}

TECHNICAL FIELD This invention relates to the manufacturing method of a semiconductor device. Specifically, It is related with the manufacturing method of the semiconductor device suitable for uniformly removing the polysilicon film formed in the surface of a semiconductor device by an etching.

Conventionally, in the manufacturing process of a semiconductor device, as a method of removing the polysilicon film formed on the surface of a semiconductor device, dry etching, wet etching using a mixture of hydrofluoric acid and nitric acid, wet etching using ammonia (NH ₄ OH) water alone, or the like This is commonly used.

However, when dry etching is used, it is conceivable that the damage caused by the etching gas extends to the polysilicon base film (silicon substrate or silicon oxide film). In addition, when wet etching with a mixture of hydrofluoric acid and nitric acid is used, after the polysilicon film is removed, the base film (silicon substrate or silicon oxide film) may be greatly removed during the over etching process.

When the silicon single crystal is treated with ammonia water, the etching rate of the crystal faces 1, 1, 1 is lower than that of the other crystal faces. For this reason, according to the wet etching which uses ammonia water alone, a silicon substrate is anisotropically etched and the square-etched etching residue is formed in the surface. Such etching residues may occur similarly even when polysilicon is wet etched with ammonia water. Therefore, when polysilicon is removed by the wet etching which uses ammonia water alone, a fine polysilicon residue may remain on the surface of a semiconductor device.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device which can remove a polysilicon film without damaging the base film and without generating an etching residue. It is done.

According to the present invention, in the method of manufacturing a semiconductor device, the method comprising etching a polysilicon film using a batch wet processing apparatus,

Forming a polysilicon film on the surface of the silicon wafer;

Wet etching the polysilicon film as a chemical with APM comprising ammonia water, hydrogen peroxide water and pure water at a predetermined mixing ratio;

Adding APM or ammonia to the chemical during the wet etching

It characterized in that it comprises a.

According to the present invention, in the method of manufacturing a semiconductor device, the method comprising etching a polysilicon film using a batch wet processing apparatus.

Forming a polysilicon film on the surface of the silicon wafer;

Wet etching the polysilicon film as a chemical with APM comprising ammonia water, hydrogen peroxide water and pure water at a predetermined mixing ratio;

Rotating the silicon wafer held by the wafer support portion of the wet processing apparatus by a predetermined angle during the wet etching;

It characterized in that it comprises a.

According to the present invention, in the method of manufacturing a semiconductor device, the method comprising etching a polysilicon film using a batch wet processing apparatus.

Forming a polysilicon film on the surface of the silicon wafer;

Wet etching the polysilicon film using a new chemical solution of APM containing ammonia water, hydrogen peroxide water and pure water at a predetermined mixing ratio;

After the end of the wet etching, the step of using the APM used for the wet etching as a waste liquid

It characterized in that it comprises a.

BRIEF DESCRIPTION OF THE DRAWINGS The flowchart for demonstrating the manufacturing method of Example 1 of this invention.

2 is a flowchart for explaining a manufacturing method of Example 2 of the present invention.

3 is a front view and a side view of a silicon wafer processed by the manufacturing method of Example 2 of the present invention.

4 is a flowchart for explaining a manufacturing method of Example 3 of the present invention.

5 is a flowchart for explaining a manufacturing method of Example 4 of the present invention;

6 is a flowchart for explaining a manufacturing method of Example 5 of the present invention;

<Explanation of symbols for main parts of drawing>

10 silicon wafer

12: wafer support

14 wafer holding part

Example 1.

Hereinafter, the manufacturing method of Example 1 of this invention is demonstrated with reference to FIG.

In the manufacturing method of this embodiment, a silicon oxide film for forming a gate oxide film or the like is formed on the surface of a silicon wafer. In the upper layer, a polysilicon film for forming a gate electrode or the like is formed. The polysilicon film is removed by wet etching using APM (a mixed solution of ammonia water, hydrogen peroxide water and pure water) as a chemical.

APM has the characteristic of removing a polysilicon film with a sufficiently large etching rate. In addition, APM can effectively suppress the generation of the etching residue generated due to the anisotropy of etching when the ammonia water becomes a chemical. In addition, APM can remove polysilicon at a sufficiently large selectivity with respect to the silicon oxide film. Therefore, wet etching using APM as a chemical is a suitable method for appropriately etching a polysilicon film without damaging a base film such as a silicon oxide film or generating an etching residue.

In this embodiment, wet etching of polysilicon using APM is performed under the following conditions using a batch wet processing apparatus.

Chemical mixing ratio;

Ammonia water (ammonia concentration 30 wt%): hydrogen peroxide water (hydrogen peroxide concentration 30wt%): pure water = 5: 1: 500.

Chemical temperature; 75 ° C.

Processing time; 720sec.

The manufacturing method of this embodiment is characterized by performing wet etching of the polysilicon film while adding the APM of the chemical while satisfying the above conditions. Hereinafter, a difference between the case where the present embodiment method is used and the case where the wet etching is performed without adding APM while satisfying the above conditions (hereinafter, this method is referred to as a "comparative method") are used. Explain.

Table 1 shows the film reduction amount that occurs in the polysilicon film when the comparative method is used, and the film reduction amount that occurs when the present Example method is used. The results for each method include the results when one wafer was processed in one batch process and the results when 50 wafers were processed. In addition, the result shown in Table 1 is a result obtained when the original film thickness of the polysilicon film was set to 9000 angstroms.

With or without chemical calibration Processing Membrane Reduction of Polysilicon Film [Å] none 1 sheet 503 50 sheets 454 has exist 1 sheet 616 50 sheets 605

The results for the comparative method (without chemical supplementation) indicate that when the number of wafers processed is 50, the amount of film reduction is about 10% less than when the number of processed wafers is one. From this result, it can be seen that even if the chemical temperature and the processing time are the same, if the amount of chemicals used for the treatment is constant, the larger the number of wafers processed, the smaller the amount of film reduction of the polysilicon film.

When the polysilicon film is removed by wet etching, Si (OH) _x is produced and the product accumulates in the chemicals. The above phenomenon is thought to be due to the larger amount of Si (OH) _x accumulated in the APM as the number of wafers processed increases, and the etching rate of the polysilicon film decreases.

Under the situation where the etching rate of the polysilicon film changes depending on the accumulation amount of Si (OH) _x , the film thickness removed by etching fluctuates every batch processing even if the wet etching processing time is managed for a certain time. In this case, fluctuations tend to occur in the remaining film thickness of the silicon oxide film formed under the polysilicon film. Further, in the worst case, there may be a situation where etching residues of polysilicon are generated on the surface of the semiconductor device.

1 shows a flowchart for explaining a series of processing contents to be executed in the manufacturing method of the present embodiment. In the manufacturing method of this embodiment, in order to prevent occurrence of the above-mentioned problems, APM is appropriately added to the wet processing apparatus in the process of wet etching of the polysilicon film. Hereinafter, with reference to FIG. 1, the series of processes performed in this embodiment is demonstrated in detail.

The series of processes shown in FIG. 1 is started after a silicon wafer having a polysilicon film is set in a batch wet processing apparatus. When the series of processes shown in FIG. 1 is started, the silicon wafer is immersed in the APM in order to start wet etching using the APM as a chemical (step 100).

The above state is maintained until a predetermined time (300 sec in this embodiment) has elapsed (step 102).

If it is determined that the predetermined time has elapsed, APM starts to be supplied to the wet processing apparatus (step 104). The mixing ratio and chemical temperature of the APM supplied to the wet processing apparatus are adjusted to the same values as the APM accumulated in the apparatus.

The APM is supplied continuously until it is determined that a predetermined time (120 sec in this embodiment) has elapsed (step 106). The wet etching of the polysilicon film is continued even during the supply of the APM.

If it is determined that the predetermined time has elapsed, the supply of APM is stopped (step 108). As described above, when APM is supplied to the wet processing apparatus, the Si (OH) _x concentration in the apparatus can be sufficiently reduced.

After that, when it is determined that the predetermined time (300 sec) has elapsed again (step 110), the wet etching using the APM as the chemical is terminated (step 112), and the current processing cycle ends.

In Table 1, the results for the method of the present embodiment (with chemical supplementation) indicate that even if the number of wafers processed is one or even 50, a large film reduction amount can be stably secured when APM is added. . As described above, according to the manufacturing method of the present embodiment, the polysilicon film can be etched stably regardless of the number of wafers processed, while APM is used as a chemical. Therefore, according to the manufacturing method of this embodiment, regardless of the number of sheets of wafers to be batch processed, the polysilicon film can be efficiently made without damaging the silicon oxide film or the like that is the basis of the polysilicon film, and effectively suppressing the occurrence of etching residues. Can be etched into an appropriate shape.

In the present Example, the ratio of NH ₄ OH contained in APM is set to a sufficiently small value. Therefore, although by adding the APM in the process of wet etching, the amount of NH ₄ OH is suppressed to a small amount. By the way, the ratio of NH ₄ OH contained in the APM is not limited to the ratio used in Example 1. Specifically, when the volume ratio of NH ₄ OH: H ₂ O is smaller than 1:50, the amount of NH ₄ OH can be suppressed to a practical amount. In addition, in Example 1, although APM is added in the process of wet etching, this invention is not limited to this, You may add ammonia water.

Example 2.

Next, the manufacturing method of Example 2 of this invention is demonstrated with reference to FIG.

In the manufacturing method of this embodiment, similarly to the case of Example 1, the polysilicon film formed on the surface of the silicon wafer is removed by wet etching using APM as a chemical. The wet etching of polysilicon using APM is performed under the following conditions using a batch type wet processing apparatus.

Chemical mixing ratio;

Ammonia water (ammonia concentration 30wt%):

Hydrogen peroxide (hydrogen peroxide concentration 30wt%): pure water = 5: 1: 500

Chemical temperature; 75 ℃

Processing time; 900 sec

As shown by the description of Example 1, the etching rate of the polysilicon film decreases as Si (OH) _x deposits in APM. In the manufacturing method of this embodiment, in order to avoid accumulation of Si (OH) _x in APM, the APM is replaced with a fresh liquid every batch process.

2 shows a flowchart for explaining a series of processing contents to be executed in the manufacturing method of the present embodiment. The series of processes shown in FIG. 2 is started after a silicon wafer having a polysilicon film is set in a batch wet processing apparatus.

In the manufacturing method of this embodiment, first, a fresh liquid of APM is supplied to the wet processing apparatus (step 120).

Next, the wet etching of the polysilicon film is started by immersing the silicon wafer in the new liquid APM (step 122).

The wet etching must be continued until it is determined that the predetermined time (900 sec in this embodiment) has elapsed, and the above state is maintained (step 102).

If it is determined that the predetermined time has elapsed, the wet etching using APM as a chemical is terminated (step 126).

Subsequently, the APM used for the wet etching process is discharged from the wet processing apparatus (step 128), and this processing cycle is completed.

The batch treatment by the manufacturing method of this example was carried out five times for a polysilicon film having a film thickness of 9000 angstroms, and the amount of film reduction of the polysilicon film was measured for each batch treatment. As a result, in all cases, the film reduction amount was in the range of 600 ± 10 angstroms. This result indicates that little change occurs in the amount of etching obtained under constant conditions when APM becomes a fresh liquid for each batch process. Therefore, according to the manufacturing method of the present embodiment, the polysilicon film can be stably etched without damaging the silicon oxide film or the like, which is the basis of the polysilicon film, and effectively suppressing the occurrence of the etching residue.

In the present Example, similarly to the case of Example 1, the ratio of NH ₄ OH contained in APM is set to a sufficiently small value. Therefore, although by the APM in sinaek each batch process, the amount of NH ₄ OH is suppressed to a small amount. By the way, the ratio of NH ₄ OH contained in the APM is not limited to the ratio used in Example 2. Specifically, when the volume ratio of NH ₄ OH: H ₂ O is smaller than 1:50, the amount of NH ₄ OH can be suppressed to a practical amount.

Example 3.

Next, the manufacturing method of Example 3 of this invention is demonstrated with reference to FIG. 3 and FIG.

3A shows a front view of a silicon wafer 10 set inside a batch wet processing apparatus. 3B shows a side view of the silicon wafer 10. The wafer support part 12 for supporting the silicon wafer 10 vertically is provided in the inside of the wet processing apparatus. A Y-shaped wafer clamping portion 14 is provided at the tip of the wafer support portion 12. The silicon wafer 10 is supported inside the wet processing apparatus by the plurality of wafer clamping portions 14.

In the manufacturing method of this embodiment, similarly to the case of Example 1, the polysilicon film formed on the surface of the silicon wafer 10 is removed by wet etching using APM as a chemical. The chemicals of wet etching, that is, APM, are difficult to penetrate into the portion where the silicon wafer 10 contacts the wafer holding portion 14. For this reason, the residue of polysilicon tends to remain in the edge part of the silicon wafer 10 (more specifically, the part pinched by the wafer clamping part 14). The manufacturing method of this embodiment is characterized by preventing the occurrence of the above etching residue by rotating the silicon wafer 10 inside the wet processing apparatus.

4 shows a flowchart for explaining the contents of a series of processes executed in the manufacturing method of the present embodiment. The series of processes shown in FIG. 4 is started after the silicon wafer 10 is set in the wet processing apparatus. When the series of processes shown in Fig. 4 is started, the silicon wafer 10 is immersed in the APM in order to start wet etching using the APM as a chemical (step 130).

In this embodiment, the above wet etching is performed under the following conditions.

Polysilicon film thickness: 500 angstroms

Chemical mixing ratio;

Ammonia water (ammonia concentration 30 wt%): hydrogen peroxide water (hydrogen peroxide concentration 30wt%): pure water = 5: 1: 500.

Chemical temperature; 75 ° C.

Processing time; 900 sec.

The wet etching under the above conditions is continued until a predetermined time (900 sec in this embodiment) elapses (step 132). The processing time 900 sec in this embodiment is a condition for securing an etching amount of about 600 angstroms. Therefore, according to the above wet etching, about 20% over etching is performed.

If it is determined that the predetermined time has elapsed, the wet etching is stopped (step 134). Since the APM hardly penetrates into the portion where the silicon wafer 10 is sandwiched by the wafer holding portion 14, etching residues may remain in these portions regardless of 20% over etching at this point.

For this reason, after the wet etching is stopped, the silicon wafer 10 is rotated, for example, by about 180 degrees inside the wet processing apparatus or in a state extracted out of the wet processing apparatus through a drying process (step) 136). According to the above process, the etching residue which remained in the edge part of the silicon wafer 10 can be moved to the position which is not in contact with the wafer clamping part 14.

In addition, the rotation angle of the silicon wafer 10 is not limited to 180 degrees. That is, the rotation angle of the silicon wafer 10 can be arbitrarily set as long as the portion held by the wafer holding portion 14 before the rotation of the silicon wafer 10 is not held by the wafer holding portion 14 again after the rotation. . In the present embodiment, the silicon wafer 10 after the wet etching has been stopped once is rotated. However, when the silicon wafer 10 can be rotated as it is soaked in chemicals, the wet etching is continued. The silicon wafer 10 may be rotated.

After the silicon wafer 10 is rotated by a predetermined angle, wet etching is resumed under the same conditions as used in the step 130 (step 138).

The wet etching is continued until a predetermined time (900 sec in this embodiment) has elapsed (step 140). According to the above process, since 20% over etching is ensured, the etching residue remaining on the edge portion of the silicon wafer 10 can be reliably removed.

If it is determined that the predetermined time has elapsed, the wet etching is terminated (step 142), and this processing cycle ends.

As described above, according to the manufacturing method of the present embodiment, wet etching can be performed while rotating the silicon wafer 10 using APM as a chemical. Therefore, according to this embodiment, the polysilicon film can be etched in a desired state without any damage to the silicon oxide film or the like, which is the basis of the polysilicon film, without leaving the etching residue on the portion sandwiched by the wafer holding portion 14. Can be.

Example 4.

Next, the manufacturing method of Example 4 of this invention is demonstrated with reference to FIG.

When the polysilicon film and the silicon oxide film were wet etched under the conditions of Examples 2 or 3 using APM as a chemical, the film thickness reduction amount of the polysilicon film was about 600 angstroms, while the film reduction amount of the silicon oxide film was 17 It is ang strong. As described above, when the polysilicon film and the silicon oxide film are wet etched under the same conditions as APM as a chemical, the etching rate of the silicon oxide film is very low compared to the etching rate of the polysilicon.

On the surface of the polysilicon film, usually, a thin silicon oxide film having a film thickness of 10 angstroms or less is naturally formed (hereinafter, the film is referred to as a "natural oxide film"). This natural oxide film interferes with the process when the polysilicon film is to be etched using APM. Moreover, since the film thickness of a natural oxide film is not uniform, when the wet etching which uses APM as a chemical is performed in the situation in which the natural oxide film is formed in the surface of a polysilicon film, the etching amount of a polysilicon film will also become nonuniform. The manufacturing method of this embodiment is characterized by preventing the occurrence of the above-mentioned problem by removing the native oxide film prior to the treatment using APM.

5 shows a flowchart for explaining the contents of a series of processes performed in the manufacturing method of the present embodiment. The series of processes shown in FIG. 5 is started after the silicon wafer with the polysilicon film is set in the wet processing apparatus. When the series of processes shown in Fig. 5 is started, prior to wet etching using APM as a chemical, wet etching using HF as a chemical is first started (step 150).

In this embodiment, the above wet etching is performed under the following conditions.

Chemical mixing ratio; HF (30 wt% HF): pure water = 1: 500

Chemical temperature; 23 ℃

Processing time; 680sec

The wet etching under the above conditions is continued until a predetermined time (680 sec in this embodiment) has elapsed (step 152). According to the wet etching using HF, the silicon oxide film can be removed at a high etching rate. Therefore, according to the above process, the natural oxide film formed on the surface of the polysilicon film can be removed.

If it is determined that the predetermined time has elapsed, the wet etching using HF as a chemical is stopped (step 154), and then the wet etching using APM as a chemical is started (step 156).

In this embodiment, wet etching using APM is performed under the following conditions.

Chemical mixing ratio;

Ammonia water (ammonia concentration 30wt%):

Hydrogen peroxide (hydrogen peroxide concentration 30wt%): pure water = 5: 1: 500

Chemical temperature; 75 ℃

Processing time; 900 sec

The wet etching under the above conditions is continued until a predetermined time (900 sec in this embodiment) has elapsed (step 158). Since the native oxide film has already been removed from the surface of the polysilicon film, the above-described wet etching enables the polysilicon film to be uniformly removed on its entire surface.

If it is determined that the predetermined time has elapsed, the wet etching using the APM as the chemical is terminated (step 160). By the end of the above-described series of processes, this process cycle is finished.

As described above, according to the manufacturing method of the present embodiment, after the natural oxide film is removed from the surface of the polysilicon film, wet etching using APM as a chemical can be started. Therefore, according to this embodiment, the polysilicon film can be etched uniformly in a desired shape on the entire surface of the semiconductor device without damaging the silicon oxide film or the like which is the basis of the polysilicon film.

Example 5.

Next, the manufacturing method of Example 5 of this invention is demonstrated with reference to FIG.

When wet etching of a polysilicon film is performed in the state in which the foreign material adhered to the surface, a foreign material may become a mask and an etching residue may be formed. Therefore, foreign matter adhering to the surface of the polysilicon is preferably removed quickly. The manufacturing method of the present embodiment is characterized in that the wet etching of the polysilicon film is performed while applying ultrasonic waves to the silicon wafer so as to satisfy the above requirements.

6 shows a flowchart for explaining the contents of a series of processes performed in the manufacturing method of the present embodiment. The series of processes shown in FIG. 6 is started after a silicon wafer with a polysilicon film is set in the wet processing apparatus. When the series of processes shown in Fig. 6 is started, first, wet etching is started using APM as a chemical and ultrasonic waves are started to be delivered to the APM (step 170).

In this embodiment, wet etching using APM is performed under the following conditions.

Chemical mixing ratio;

Ammonia water (ammonia concentration 30 wt%): hydrogen peroxide water (hydrogen peroxide concentration 30wt%): pure water = 5: 1: 500.

Chemical temperature; 75 ° C.

Processing time; 900 sec.

Until the predetermined time (900 sec in this embodiment) elapses, the wet etching under the above conditions is continued (step 172). Since ultrasonic waves are transmitted to the silicon wafer through the APM, foreign matter adhering to the surface of the polysilicon film is quickly removed. For this reason, according to the said process, a polysilicon film can be removed, without making an etching residue in the whole surface.

If it is determined that the predetermined time has elapsed, the wet etching using the APM as the chemical is terminated, and the generation of the ultrasonic wave is stopped (step 174). This process is complete | finished and this process cycle is complete | finished.

As described above, according to the manufacturing method of the present embodiment, wet etching can be performed while removing foreign matter adhering to the surface of the polysilicon film. When the polysilicon film having a film thickness of 500 angstroms was wet etched under the above conditions without applying ultrasonic waves, 30,000 or more etching residues having a particle diameter of 0.15 탆 or more remained. In contrast, in the method of this embodiment, the number of residues could be reduced to 1620. As described above, according to this embodiment, the polysilicon film can be etched without damaging the base film such as the silicon oxide film, and the etching residue can be made in a very small amount on the entire surface of the semiconductor device.

Since this invention is comprised as demonstrated above, it exhibits the effect as shown below.

According to the present invention, the polysilicon film can be etched using APM as a chemical. In addition, by adding APM or ammonia to the chemical during wet etching, the etching rate of the polysilicon film can be prevented from decreasing. For this reason, according to this invention, a polysilicon film can be etched stably without providing damage to base films, such as a silicon oxide film.

According to the present invention, APM or ammonia adjusted to the same temperature as the chemical may be added during the wet etching. For this reason, according to this invention, APM and ammonia can be added without accommodating the fluctuation of the wet etching conditions, and stable etching characteristics can be maintained.

According to the present invention, by rotating the silicon wafer during wet etching, the portion in contact with the wafer support can be exposed to the APM. For this reason, according to the present invention, it is possible to effectively prevent the occurrence of etching residues in the portions in contact with the wafer support.

According to the present invention, the polysilicon film in the portion not in contact with the wafer support can be completely removed before the rotation of the silicon wafer. In addition, the polysilicon film in the portion that was in contact with the wafer support before rotation of the silicon wafer can be completely removed after the rotation of the silicon wafer. Therefore, according to this invention, generation | occurrence | production of the etching residue of a polysilicon film can be prevented effectively.

According to the present invention, the polysilicon film can always be wet etched using a fresh liquid of APM. In other words, in the present invention, APM in which Si (OH) _x is accumulated is not used as a chemical for wet etching. For this reason, according to this invention, a polysilicon film can always be removed with a stable etching rate.

According to the present invention, it is possible to remove the native oxide film formed on the surface of the polysilicon film before the wet etching using the APM. Therefore, according to the present invention, the progress of wet etching using APM is not hindered by the natural oxide film, and stable etching characteristics can always be obtained.

According to the present invention, foreign matter adhering to the surface of the silicon wafer during the wet etching can be removed by ultrasonic waves. For this reason, according to this invention, it can prevent effectively that such a foreign material becomes a mask and an etching residue is formed.

According to the present invention, wet etching can be performed using APM in which the concentration of ammonia is sufficiently suppressed. For this reason, according to this invention, the usage-amount of ammonia can fully be made into a small quantity.

Claims (3)

In the manufacturing method of a semiconductor device including the process of etching a polysilicon film using a batch wet processing apparatus, Depositing a polysilicon film on the surface of the silicon wafer, Wet etching the polysilicon film as a chemical with APM comprising ammonia water, hydrogen peroxide water and pure water at a predetermined mixing ratio, and Adding APM or ammonia to the chemical during the wet etching Method for manufacturing a semiconductor device comprising a. In the manufacturing method of a semiconductor device including the process of etching a polysilicon film using a batch type wet processing apparatus, Depositing a polysilicon film on the surface of the silicon wafer, Wet etching the polysilicon film as a chemical with APM comprising ammonia water, hydrogen peroxide water and pure water at a predetermined mixing ratio, and Rotating the silicon wafer held by the wafer support of the wet processing apparatus by a predetermined angle during the wet etching; Method for manufacturing a semiconductor device comprising a. In the manufacturing method of a semiconductor device including the process of etching a polysilicon film using a batch type wet processing apparatus, Depositing a polysilicon film on the surface of the silicon wafer, Wet etching the polysilicon film as a chemical with a fresh solution of APM containing ammonia water, hydrogen peroxide water and pure water at a predetermined mixing ratio, and After the end of the wet etching, using the APM used for the wet etching as a waste liquid. Method for manufacturing a semiconductor device comprising a.