KR20010036625A - A Circulation System of Scrubber - Google Patents
A Circulation System of Scrubber Download PDFInfo
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- KR20010036625A KR20010036625A KR1019990043726A KR19990043726A KR20010036625A KR 20010036625 A KR20010036625 A KR 20010036625A KR 1019990043726 A KR1019990043726 A KR 1019990043726A KR 19990043726 A KR19990043726 A KR 19990043726A KR 20010036625 A KR20010036625 A KR 20010036625A
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- cleaning
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- waste gas
- thermal
- type cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Abstract
Description
본 발명은 폐가스 처리장치에 관한 것으로, 특히 폐가스 처리시 발생하는 2차 부산물을 웨트방식 및 열방식 세정수단으로 순환시켜 유해가스를 완벽하게 제거할 수 있는 세정수단의 순환세정시스템에 관한 것이다.The present invention relates to a waste gas treatment apparatus, and more particularly, to a circulation cleaning system for cleaning means capable of completely removing harmful gases by circulating secondary by-products generated during waste gas treatment with wet and thermal cleaning means.
각종의 제품을 양산하는 공장에서 퍼플루오로컴파운드(PerFluoroCompound; 이하 PFC라 함) 가스의 사용으로 배출되는 폐가스는 일반산업 또는 가정에서 발생되는 CO2의 자연소멸되는 기간을 ″1″로 기준하였을 때, 적게는 수백에서 수만배의 기간이 소요되기 때문에, 그 사용량 자체는 적으나, 성분의 잔존기간 때문에 실질적인 영향이 매우 크다고 보고되고 있다. 이에 따라, 각국에서는 지구온난화에 영향을 주는 물질에 대해서는 국제적인 규제를 통하여 지구를 보호하자는 움직임 본격화되고 있다.Waste gas emitted by the use of PerFluoroCompound (hereinafter referred to as PFC) gas in a factory that produces various products is based on the period of natural decay of CO 2 generated from general industry or household as ″ 1 ″. It is reported that the amount of use is small since it takes a few hundred to tens of thousands of times, but the actual effect is reported to be very large because of the remaining period of the component. As a result, the movement to protect the earth through international regulations on substances affecting global warming is in earnest.
특히, 반도체 공정에서 사용되는 케미컬은, 예컨대 건식식각에 사용되는 HBr, HF, 및 HCl 가스나 CVD(chemical vapor deposition) 공정에 사용되는 CF4, SF6, 및 NF3등의 가스는 대부분 부식성가스(corrosive gas)로서 순도가 매우 높다.In particular, the chemicals used in the semiconductor process are, for example, HBr, HF, and HCl gas used in dry etching, and gases such as CF 4 , SF 6 , and NF 3 used in chemical vapor deposition (CVD) processes are mostly corrosive gases. As a corrosive gas, its purity is very high.
또한, 공정을 수행하면 부식성가스 또는 독성가스를 발생시키므로 이를 제거하기 위한 필터는 필수적으로 갖추어야 하며, 새로운 공정과 새로운 케미컬의 사용으로 인해 필터링되지 않는 가스의 방출에 대한 세심한 주의가 요구되고 있다.In addition, since the process generates a corrosive gas or toxic gas, it is necessary to have a filter to remove it. Due to the new process and the use of a new chemical, careful attention to the emission of unfiltered gas is required.
그러면, 종래기술에 의한 세정시스템에 대해 설명한다.The cleaning system according to the prior art will now be described.
도 2a 및 도 2b는 종래의 세정시스템을 개략적으로 나타낸 도면이다. 도 2a를 참조하면, 참조번호 10은 웨트방식 세정수단이고, A는 웨트방식 세정수단(10)에 공급되는 산성, 알칼리성 및 PFC 폐가스이고, B는 PFC 폐가스이다.2a and 2b schematically show a conventional cleaning system. Referring to FIG. 2A, reference numeral 10 denotes a wet type cleaning means, A is an acidic, alkaline and PFC waste gas supplied to the wet type cleaning means 10, and B is a PFC waste gas.
도 2a에서, 상기 PFC 폐가스는 세정처리되지 않고 그대로 방출됨을 알 수 있다.In Figure 2a, it can be seen that the PFC waste gas is discharged as it is without being washed.
이를 해결하기 위해 열방식 세정수단을 이용한 폐가스 처리방법이 제안되었다. 이는 도 2b에 도시되어 있다. 도 2b를 참조하면, 참조번호 20은 열방식 세정수단이고, C는 PFC 폐가스 및 유기 폐가스이고, D는 NOX, SOX, CO, CO2, HF 등의 가스이다.In order to solve this problem, a waste gas treatment method using a thermal cleaning means has been proposed. This is shown in Figure 2b. Referring to FIG. 2B, reference numeral 20 is a thermal cleaning means, C is a PFC waste gas and an organic waste gas, and D is a gas such as NO X , SO X , CO, CO 2 , HF, and the like.
도 2b에서, 상기 PFC 폐가스는 열에 의해 세정되지만, 이로인해 2차 부산물인 부식성가스 및 독성가스가 발생함을 알 수 있다.In FIG. 2B, the PFC waste gas is cleaned by heat, but it can be seen that the secondary by-products corrosive gas and toxic gas are generated.
상기한 바와 같이, PFC 가스의 처리를 위하여 일반적으로 사용되는 기술은 열분해에 의한 열방식 세정방법이 일반적인 기술로 사용되었으나, 이에 따른 2차 부산물이 발생하여 반드시 중화과정을 거쳐야 했다. 그런데, 이 과정이 소형의 경우에 적합한 구조로 되어 있었으며, 또한 부식성 가스가 유입되는 경우에 세정수단에 심각한 손상을 주게되는 문제점이 있었다.As described above, the thermal cleaning method by pyrolysis is generally used for the treatment of PFC gas, but secondary by-products have been generated and must be neutralized. However, this process had a structure suitable for a small case, and there was a problem that serious damage to the cleaning means when the corrosive gas is introduced.
따라서, 본 발명의 목적은 폐가스 처리시 발생하는 2차 부산물을 웨트방식 및 열방식 세정수단으로 순환시켜 부식성가스 및 독성가스를 완벽하게 제거할 수 있는 세정수단의 순환세정시스템을 제공하는데 있다.Accordingly, an object of the present invention is to provide a circulation cleaning system for cleaning means capable of completely removing corrosive and toxic gases by circulating secondary by-products generated during waste gas treatment with wet and thermal cleaning means.
도 1은 본 발명의 일 실시예에 따른 순환세정시스템을 개략적으로 나타낸 도면,1 is a view schematically showing a circulation washing system according to an embodiment of the present invention;
도 2a 및 도 2b는 종래의 세정시스템을 개략적으로 나타낸 도면이다.2a and 2b schematically show a conventional cleaning system.
**도면의 주요부분에 대한 부호의 설명**** Description of the symbols for the main parts of the drawings **
100 : 웨트방식 세정수단 200 : 열방식 세정수단100 wet cleaning means 200 heat cleaning means
300 : 순환로 400 : 체크밸브300: circulation path 400: check valve
상기한 목적을 달성하기 위해 본 발명은 반도체공정 수행후에 발생하는 폐가스를 처리하는 세정수단의 순환세정시스템에 관한 것으로, 본 발명의 순환세정시스템은, 산 또는 알칼리 계열의 폐가스를 세정하는 웨트방식 세정수단과, PFC 계열의 폐가스를 세정하는 열방식 세정수단과, 상기 열방식 세정수단으로부터 배출되는 2차 부산물의 재처리를 위해 열방식 세정수단에서 웨트방식 세정수단으로 순환할 수 있도록 형성된 순환로를 포함하여 이루어진 것을 특징으로 한다.In order to achieve the above object, the present invention relates to a circulating cleaning system of the cleaning means for processing the waste gas generated after the semiconductor process, the circulating cleaning system of the present invention, wet type cleaning for cleaning the waste gas of the acid or alkali series Means, a thermal cleaning means for cleaning PFC-based waste gas, and a circulation path configured to circulate from the thermal cleaning means to the wet cleaning means for reprocessing secondary by-products discharged from the thermal cleaning means. Characterized in that made.
이 때, 상기 순환로에는 재처리되는 효율을 증대시키기 위해 역류방지수단이 더 구비되는 것이 바람직하다,At this time, the circulation path is preferably further provided with a backflow prevention means to increase the efficiency of reprocessing,
또한, 상기 역류방지수단은 체크밸브인 것이 더욱 바람직하다.Further, the backflow prevention means is more preferably a check valve.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예에 대해 설명한다.Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the present invention.
도 1은 본 발명의 일 실시예에 따른 순환세정시스템을 개략적으로 나타낸 도면이다. 도 1을 참조하면, 참조번호 100은 웨트방식 세정수단이고, 200은 열방식 세정수단이다. 그리고, 열방식 세정수단(200)에서 웨트방식 세정수단(100)의 입구부로 순환로(300)가 형성되어 있으며, 이 순환로(300) 상에는 체크밸브(400)가 설치되어 있다.1 is a view schematically showing a circulating cleaning system according to an embodiment of the present invention. Referring to FIG. 1, reference numeral 100 denotes a wet cleaning means, and 200 denotes a thermal cleaning means. In addition, a circulation path 300 is formed from the thermal cleaning means 200 to the inlet of the wet cleaning means 100, and a check valve 400 is provided on the circulation path 300.
본 실시예에서는 열방식 세정수단(200)에서 웨트방식 세정수단(100)으로 순환로(300)를 구성하였으나, 폐가스의 종류에 따라 웨트방식 세정수단(100)에서 열방식 세정수단(200)으로 순환로를 구성할 수도 있다.In the present exemplary embodiment, the circulation path 300 is configured from the thermal method 200 to the wet method 100, but the circulation path from the wet method 100 to the thermal method 200 depends on the type of waste gas. It can also be configured.
A는 산성 및 알칼리성 폐가스이고, C는 PFC 폐가스이고, D는 PFC의 2차 부산물인 NOX, SOX, CO, CO2, HF 등의 가스이다. E는 대기로 방출되는 무해한 가스이다.A is an acidic and alkaline waste gas, C is a PFC waste gas, and D is a gas such as NO X , SO X , CO, CO 2 , HF, which are secondary by-products of PFC. E is a harmless gas emitted to the atmosphere.
상기와 같은 본 발명의 순환세정시스템의 동작효과를 간단히 설명한다.The operation and effect of the circulation cleaning system of the present invention as described above will be briefly described.
먼저, 웨트방식으로 세정이 가능한 산성 및 알칼리 폐가스를 웨트방식 세정수단에 유입시켜 처리한 후 이를 대기중으로 방출한다.First, the acidic and alkaline waste gas which can be cleaned by the wet method is introduced into the wet type cleaning means, treated, and then discharged into the atmosphere.
한편, PFC 가스, 예를 들어 SF6, CHF3, C2F6, NF3, CF4등의 가스를 열방식 세정장치로 유입시켜 처리한 후, 상기 PFC 가스의 2차 부산물인 NOX, SOX, CO, CO2, HF 등의 가스가 발생되면, 이 2차 부산물은 물에 의해 세정이 가능하므로 순환로를 통해 웨트방식 세정수단으로 유입시켜 처리한 후, 대기중으로 방출시킨다.Meanwhile, PFC gas, for example, SF 6 , CHF 3 , C 2 F 6 , NF 3 , CF 4, and the like are introduced into a thermal cleaning apparatus and treated, and then NO X , which is a secondary by-product of the PFC gas, is treated. When the gas such as SO X , CO, CO 2 , HF is generated, the secondary by-products can be cleaned by water, so that the secondary by-products are introduced into the wet type cleaning means through a circulation path, and then discharged into the atmosphere.
이와 같이, 반도체 공정은 PFC 외의 타종류의 가스가 복합적으로 사용되기 때문에 단일방식, 즉 웨트방식 또는 열방식만으로 폐가스를 모두 처리할 수 없다. 특히, 열방식에 의해 PFC 가스로부터 발생하는 2차 부산물은 부식성가스이면서 독성가스이므로 필히 중화처리해야만 한다. 이에 따라, 상기 2차 부산물을 웨트방식 세정수단으로 순환시킴으로써 최종 배출시 매우 안정적이고 무해한 가스가 방출됨을 알 수 있다.As described above, in the semiconductor process, since other types of gases other than PFC are used in combination, the waste gas cannot be treated by the single method, that is, the wet method or the thermal method alone. In particular, the secondary by-products generated from the PFC gas by the thermal method are corrosive and toxic gases and must be neutralized. Accordingly, it can be seen that by circulating the secondary by-products to the wet type cleaning means, a very stable and harmless gas is discharged at the final discharge.
상술한 바와 같이, 본 발명에 따른 순환세정시스템은, 순수 PFC 처리시 발생되는 각종 부산물인 NOX, SOX, HF, SiF 등을 처리하기 위해 순환세정시스템을 각 공장의 최종 배출구에 설치함으로써 PFC 가스와 이를 처리함에 따라 발생되는 부산물을 순환방식으로 일괄처리함으로써 환경 유해물질 발생을 방지할 수 있다.As described above, the circulating cleaning system according to the present invention, by installing the circulating cleaning system in the final outlet of each plant to treat various by-products NO X , SO X , HF, SiF, etc. generated during the pure PFC treatment By circulating the gas and by-products generated by treating it in a circulating manner, it is possible to prevent the generation of environmentally harmful substances.
본 발명은 상술한 실시예에 한정되지 않으며, 본 발명의 기술적 사상 내에서 당분야에서 통상의 지식을 가진 자에 의하여 많은 변형이 가능함은 명백하다.The present invention is not limited to the above-described embodiment, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.
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| KR1019990043726A KR20010036625A (en) | 1999-10-11 | 1999-10-11 | A Circulation System of Scrubber |
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| KR1019990043726A KR20010036625A (en) | 1999-10-11 | 1999-10-11 | A Circulation System of Scrubber |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100959784B1 (en) * | 2003-04-02 | 2010-05-28 | 삼성전자주식회사 | Semiconductor manufacturing device having a pipe arrangement for preventing a counterflow |
| US7841788B2 (en) | 2006-03-22 | 2010-11-30 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
-
1999
- 1999-10-11 KR KR1019990043726A patent/KR20010036625A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100959784B1 (en) * | 2003-04-02 | 2010-05-28 | 삼성전자주식회사 | Semiconductor manufacturing device having a pipe arrangement for preventing a counterflow |
| US7841788B2 (en) | 2006-03-22 | 2010-11-30 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
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