KR20010035858A - vacuum system for ion implanting apparatus - Google Patents

vacuum system for ion implanting apparatus Download PDF

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Publication number
KR20010035858A
KR20010035858A KR1019990042622A KR19990042622A KR20010035858A KR 20010035858 A KR20010035858 A KR 20010035858A KR 1019990042622 A KR1019990042622 A KR 1019990042622A KR 19990042622 A KR19990042622 A KR 19990042622A KR 20010035858 A KR20010035858 A KR 20010035858A
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South Korea
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load lock
lock chamber
vacuum
valve
chamber
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KR1019990042622A
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Korean (ko)
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오상근
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윤종용
삼성전자 주식회사
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Priority to KR1019990042622A priority Critical patent/KR20010035858A/en
Publication of KR20010035858A publication Critical patent/KR20010035858A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: A vacuum system of an ion injection device is provided to prevent the pollution of a wafer by controlling a pressure difference according to an opening process of a valve in a load-lock chamber. CONSTITUTION: A vacuum system of an ion injection device comprises an ion source chamber(10), an ion beam line chamber(20), an end station(30), a load-lock chamber(40) connected with the end station(30), a vacuum pump(60) connected with load-lock chamber(40) through a vacuum line(50), and a roughing valve(V1,V2) installed at the vacuum pump(60). A pressure variation prevention valve(V11,V12) is installed between the load-lock chamber(40) and the roughing valve(V1,V2) in order to prevent a sudden change of a pressure between the load-lock chamber(40) and the vacuum line(50).

Description

이온주입장치의 진공시스템{vacuum system for ion implanting apparatus}Vacuum system for ion implantation apparatus

본 발명은 이온주입장치에 관한 것으로, 더욱 상세하게는 로드록챔버의 러핑밸브의 오픈에 따른 로드록챔버 내의 웨이퍼 오염을 방지하도록 한 이온주입장치의 진공시스템에 관한 것이다.The present invention relates to an ion implantation apparatus, and more particularly, to a vacuum system of an ion implantation apparatus to prevent wafer contamination in the loadlock chamber due to the opening of the roughing valve of the loadlock chamber.

일반적으로, 불순물을 도핑하는 방법으로는 이온주입법과 확산법 등이 있다. 확산법은 1970년대 초반까지 지배적으로 이용되어 왔으나 몇 가지의 문제점을 가지고 있어 최근에는 이온주입법으로 대체되고 있다. 상기 확산법의 문제점으로는 낮은 농도영역에서의 농도조절이 어렵고, 불순물이 웨이퍼에 파고드는 접합깊이의 조절이 어렵고, 고온에서의 확산이 진행되는 동안 먼저 주입되었던 불순물이 웨이퍼 내에서 수직, 수평방향으로 확산되어 반도체 소자상의 실제로 원하는 확산영역보다 더 큰 영역이 형성되는 문제점을 갖고 있다.In general, methods of doping impurities include ion implantation and diffusion. Diffusion has been dominant until the early 1970s, but has been replaced by ion implantation in recent years due to some problems. As a problem of the diffusion method, it is difficult to control the concentration in the low concentration region, difficult to control the depth of bonding of impurities into the wafer, and impurity previously injected during diffusion at high temperature is vertically and horizontally in the wafer. The diffusion has a problem in that a region larger than the actually desired diffusion region on the semiconductor element is formed.

이에 비하여, 이온주입법은 확산법의 상기 문제점을 보완할 수 있을 뿐 아니라 웨이퍼 상에서 원하지 않는 영역으로 들어오는 불순물을 막기 위한 마스크로서 실리콘 산화막 이외에 감광막을 사용할 수도 있으며, 균일성 또한 확산법에 비해 훨씬 양호하다는 장점을 갖고 있다. 그래서, 이온주입법은 웨이퍼 내에 반도체 소자를 형성시키는데 있어서, 그 적용범위가 점차 증대되고 있는 추세에 있다.On the other hand, the ion implantation method can supplement the above problems of the diffusion method and can also use a photoresist film in addition to the silicon oxide film as a mask for preventing impurities from entering an undesired region on the wafer, and uniformity is much better than that of the diffusion method. Have Therefore, the ion implantation method has a tendency that the application range is gradually increasing in forming a semiconductor element in a wafer.

이에 따라, 이온주입장치도 고에너지와 고전류의 이온빔을 발생시킬 수 있는 능력을 갖추도록 고급화되고 있다. 이온주입법의 적용범위는 여러 가지 있으나 모스 트랜지스터 소자의 제조에 적용되는 일반적이고 대표적인 몇 가지를 요약하면 다음과 같다.Accordingly, the ion implantation apparatus is also advanced to have the ability to generate high energy and high current ion beams. Although the application range of the ion implantation method is various, the following is a summary of some typical and representative applications for the fabrication of MOS transistor devices.

a. 필드영역에서의 문턱전압을 조절한다.a. Adjust the threshold voltage in the field area.

b. 게이트 영역아래에 채널 부분을 형성시킨다.b. A channel portion is formed below the gate region.

c. 게이트 영역아래에서의 문턱전압을 조절한다.c. Adjust the threshold voltage under the gate region.

d. 모스 트랜지스터의 소오스와 드레인 부분을 형성시킨다.d. Source and drain portions of the MOS transistor are formed.

이외에도 이온주입법은 바이폴라 트랜지스터 소자의 제조에 있어서 저항이나 에미터, 베이스 등을 형성시키는데 적용되고 있다.In addition, the ion implantation method is applied to form a resistor, an emitter, a base, and the like in the manufacture of a bipolar transistor device.

종래의 이온주입장치는 도 1에 도시된 바와 같이, 이온들을 생성하는 이온 소스 챔버(10)와, 상기 생성된 이온들중 이온주입할 이온의 빔을 형성하는 빔라인 챔버(20)와, 상기 이온빔을 웨이퍼에 이온주입하는 엔드 스테이션(30) 및 엔드 스테이션(30)에 이온주입할 웨이퍼(1)를 반입하거나 이온주입 완료한 웨이퍼(1)를 반출하기 위한 로드락챔버(40)로 구성된다. 로드락챔버(40)는 로딩용 및 언로딩용 로드락챔버(41),(42)로 각각 구성된다. 빔라인챔버(20)와 엔트 스테이션(30) 및 로드락챔버(41),(42)에 진공라인(50)을 거쳐 진공펌프(60)가 공통 연결된다. 로드락챔버(41),(42)에 근접한 진공라인(50)에 제 1, 2 러핑밸브(V1),(V2)가 각각 설치되고, 빔라인 챔버(20)에 근접한 진공라인(50)에 제 3 러핑밸브(V3)가 설치되고, 엔드 스테이션(30)에 근접한 진공라인(50)에 제 4 러핑밸브(V4)가 설치되고, 진공펌프(60)에 근접한 진공라인(50)에 제 5 러핑밸브(V5)가 설치된다. 또한, 로드락챔버(41),(42)에 연결된 질소 공급라인에 밸브(V6),(V7)가 각각 설치된다. 엔드 스테이션(30)과 진공라인(50) 사이에 진공펌프(70)가 설치된다. 미설명부호 P1-P5는 압력 게이지이다. 이들 각부(10),(20),(30),(40) 사이에는 게이트밸브들(도시 안됨)이 설치된다.As shown in FIG. 1, a conventional ion implantation apparatus includes an ion source chamber 10 for generating ions, a beamline chamber 20 for forming a beam of ions to be implanted among the generated ions, and the ion beam. And a load lock chamber 40 for carrying in the wafer 1 to be ion-implanted into the end station 30 and the ion-implanted wafer 1 to be carried out to the end station 30. The load lock chamber 40 is composed of load lock chambers 41 and 42 for loading and unloading, respectively. The vacuum pump 60 is commonly connected to the beamline chamber 20, the end station 30, the load lock chambers 41, and 42 through the vacuum line 50. First and second roughing valves V1 and V2 are respectively installed in the vacuum lines 50 adjacent to the load lock chambers 41 and 42, and the first and second roughing valves V1 and V2 are installed in the vacuum lines 50 adjacent to the beamline chamber 20. The third roughing valve V3 is installed, the fourth roughing valve V4 is installed in the vacuum line 50 proximate the end station 30, and the fifth roughing in the vacuum line 50 proximate the vacuum pump 60. The valve V5 is installed. In addition, valves V6 and V7 are respectively installed in the nitrogen supply lines connected to the load lock chambers 41 and 42. A vacuum pump 70 is installed between the end station 30 and the vacuum line 50. Reference numerals P1-P5 are pressure gauges. Gate valves (not shown) are installed between the respective parts 10, 20, 30, and 40.

그러나, 이와 같이 구성되는 종래의 이온주입장치의 진공계에서는 로드록챔버(41),(42) 내의 웨이퍼(1)를 이온주입공정을 처리하기 위해 로드록챔버(41),(42) 내의 압력을 엔드 스테이션(30) 내의 압력으로 감압시켜야 하는데 이를 위해 제 1, 2 러핑밸브(V1),(V2)를 오픈할 때, 로드록챔버(41),(42) 내의 대기압이 진공라인(50) 내의 저압과의 압력 차이로 인하여 순간적으로 압력 변동을 일으키는데 이는 로드록챔버(41),(42) 내에서의 급격한 기류를 발생시킨다. 이로써, 로드록챔버(41),(42) 내의 바닥에 있던 오염원인 입자(particle)가 급격한 기류에 의해 소용돌이 현상을 일으키면서 웨이퍼(1)에 흡착된다. 그 결과, 웨이퍼(1)의 오염이 발생하는데 이는 웨이퍼당 반도체소자의 양품 제조수율 및 품질의 저하를 초래한다.However, in the vacuum system of the conventional ion implantation apparatus configured as described above, the pressure in the load lock chambers 41 and 42 is increased to process the ion implantation process in the wafer 1 in the load lock chambers 41 and 42. The pressure in the end station 30 must be reduced. For this purpose, when the first and second roughing valves V1 and V2 are opened, atmospheric pressure in the load lock chambers 41 and 42 is reduced in the vacuum line 50. The pressure difference from the low pressure causes an instantaneous pressure fluctuation, which causes a sudden air flow in the load lock chambers 41 and 42. As a result, particles, which are contaminants at the bottom of the load lock chambers 41 and 42, are adsorbed onto the wafer 1 while causing a vortex phenomenon by a sudden air flow. As a result, contamination of the wafer 1 occurs, which leads to deterioration in the yield and quality of production of semiconductor devices per wafer.

따라서, 본 발명의 목적은 로드록챔버의 밸브 개방에 따른 압력 차이로 로드록챔버 내에서의 웨이퍼 오염을 방지하도록 한 이온주입장치의 진공시스템을 제공하는데 있다.Accordingly, an object of the present invention is to provide a vacuum system of an ion implantation apparatus which prevents wafer contamination in a load lock chamber due to a pressure difference according to the valve opening of the load lock chamber.

도 1은 종래 기술에 의한 이온주입장치의 진공시스템을 나타낸 개략도.1 is a schematic view showing a vacuum system of a conventional ion implantation apparatus.

도 2는 본 발명에 의한 이온주입장치의 진공시스템을 나타낸 개략도.Figure 2 is a schematic diagram showing a vacuum system of the ion implantation apparatus according to the present invention.

이와 같은 목적을 달성하기 위한 본 발명에 의한 이온주입장치의 진공시스템은Vacuum system of the ion implantation apparatus according to the present invention for achieving the above object is

이온소오스챔버와 이온빔라인 챔버와, 엔드 스테이션과, 상기 엔드 스테이션에 연결된 로드록챔버와, 상기 로드록챔버에 진공라인에 의해 연결된 진공펌프 및상기 로드록챔버를 위해 상기 진공라인에 설치된 러핑밸브를 갖는 이온주입장치에 있어서,An ion source chamber and an ion beam line chamber, an end station, a load lock chamber connected to the end station, a vacuum pump connected to the load lock chamber by a vacuum line, and a roughing valve installed in the vacuum line for the load lock chamber. In the ion implantation device having,

상기 로드록챔버와 상기 러핑밸브 사이에 설치되어서, 상기 러핑밸브의 개방에 따른 상기 로드록챔버와 진공라인 사이의 급격한 압력 변동을 방지하도록 한 압력변동방지용 밸브를 갖는 것을 특징으로 한다.It is installed between the load lock chamber and the roughing valve, it characterized in that it has a pressure fluctuation prevention valve to prevent a sudden pressure fluctuation between the load lock chamber and the vacuum line according to the opening of the roughing valve.

바람직하게는 상기 얍력변동방지용 밸브가 나비밸브로 구성된다.Preferably, the pressure fluctuation preventing valve is constituted by a butterfly valve.

따라서, 본 발명은 로드록챔버의 러핑밸브가 오픈되더라도 압력변동방지용 밸브가 닫혀져 로드록챔버 내의 오염원인 입자에 의한 오염을 방지할 수 있다.Therefore, in the present invention, even when the roughing valve of the load lock chamber is opened, the pressure fluctuation preventing valve is closed to prevent contamination by particles that are a source of contamination in the load lock chamber.

이하, 본 발명에 의한 이온주입장치의 진공시스템을 첨부된 도면을 참조하여 상세히 설명하기로 한다. 종래의 부분과 동일 구성 및 동일 작용의 부분에는 동일 부호를 부여한다.Hereinafter, a vacuum system of an ion implantation apparatus according to the present invention will be described in detail with reference to the accompanying drawings. The same code | symbol is attached | subjected to the part of the same structure and the same action as the conventional part.

도 2는 본 발명에 의한 이온주입장치의 진공시스템을 나타낸 개략도이다.2 is a schematic view showing a vacuum system of the ion implantation apparatus according to the present invention.

도 2에 도시된 바와 같이, 본 발명의 진공시스템은 압력변동방지용 밸브(V11),(V12)가 각각 로드락챔버(41),(42)와 제 1, 2 러핑밸브(V1),(V2)의 사이의 진공라인(50)에 추가로 설치된 것을 제외하면, 도 1의 진공시스템과 동일 구조로 이루어진다. 여기서, 압력변동방지용 밸브(V11),(V12)는 나비밸브로서 양단의 압력 차이가 없을 때에는 열려 있고, 양단의 압력차이가 있을 때에는 닫히게 된다.As shown in FIG. 2, in the vacuum system of the present invention, the pressure fluctuation prevention valves V11 and V12 are respectively the load lock chambers 41 and 42 and the first and second roughing valves V1 and V2. Except that it is additionally installed in the vacuum line 50 between the) is made of the same structure as the vacuum system of FIG. Here, the pressure fluctuation preventing valves V11 and V12 are butterfly valves, which open when there is no pressure difference between both ends, and close when there is a pressure difference between both ends.

이와 같기 구성되는 본 발명의 이온주입장치의 진공시스템에서는 압력변동방지용 밸브(V11),(V12)는 예를 들어 나비밸브로서 제 1, 2 러핑밸브(V1),(V2)의 오픈 전에는 자체의 용수철(도시 안됨)에 의해 오픈상태로 유지된다. 로드록챔버(41),(42) 내의 웨이퍼(1)를 이온주입공정을 처리하기 위해 로드록챔버(41),(42) 내의 압력을 엔드 스테이션(30) 내의 압력으로 감압시켜야 하는데 이를 위해 제 1, 2 러핑밸브(V1),(V2)를 오픈시켜야 한다. 이때, 제 1, 2 러핑밸브(V1),(V2)를 오픈하면, 로드록챔버(41),(42) 내의 대기압이 진공라인(50) 내의 저압과의 압력 차이로 인하여 순간적으로 압력 변동을 일으켜 록드록챔버(41),(42) 내의 순간적인 입자 흐름이 발생한다. 이때, 기 오픈된 상태의 압력변동방지용 밸브(V11),(V12)가 로드록챔버(41),(42) 내의 대기중에 존재하는 기체 분자의 수만큼 순간적인 많은 흐름에 의해 닫혀진다. 이는 순간적인 기체 분자의 급격한 흐름을 막아서 진공펌프(60)의 초기 펌핑량을 감소시키는 효과를 주므로 저속 펌핑과 같은 결과를 가져온다. 따라서, 초기 펌핑시에 주로 발생하는 로드록챔버(41),(42) 내의 웨이퍼(1)에 입자가 흡착하는 현상이 방지된다.In the vacuum system of the ion implantation apparatus of the present invention configured as described above, the pressure fluctuation preventing valves V11 and V12 are, for example, butterfly valves, before their first and second roughing valves V1 and V2 are opened. It is kept open by a spring (not shown). The pressure in the load lock chambers 41 and 42 must be reduced to the pressure in the end station 30 in order to process the ion implantation process in the wafer 1 in the load lock chambers 41 and 42. 1, 2 roughing valve (V1), (V2) should be open. At this time, when the first and second roughing valves V1 and V2 are opened, the atmospheric pressure in the load lock chambers 41 and 42 may be momentarily changed due to the pressure difference from the low pressure in the vacuum line 50. This causes instantaneous particle flow in the locklock chambers 41 and 42. At this time, the pressure fluctuation preventing valves V11 and V12 in the previously opened state are closed by a large number of instantaneous flows as many as the number of gas molecules present in the atmosphere in the load lock chambers 41 and 42. This has the effect of reducing the initial pumping amount of the vacuum pump 60 by preventing the rapid flow of gas molecules, resulting in the same as the low speed pumping. Therefore, the phenomenon that particles adsorb to the wafer 1 in the load lock chambers 41 and 42, which occurs mainly at the time of initial pumping, is prevented.

이어서, 일정 시간이 경과한 후에는 기체 분자의 수가 감소하는데 이는 압력변동방지용 밸브(V11),(V12)의 오픈력 감소를 가져와 압력변동방지용 밸브(V11),(V12)가 다시 원래의 상태로 완전히 오픈된다.Subsequently, after a certain time has elapsed, the number of gas molecules decreases, which leads to a decrease in the open force of the pressure fluctuation preventing valves V11 and V12 so that the pressure fluctuation preventing valves V11 and V12 return to their original states. Completely open.

이상에서 살펴본 바와 같이, 본 발명에 의한 이온주입장치의 진공시스템은 로드록챔버의 전방에 러핑밸브와 더불어 압력변동방지용 밸브를 추가로 설치하여 로드록챔버 내의 압력을 감압시키기 위해 러핑밸브를 오픈할 때 로드록챔버와 진공라인과의 압력 차이로 인하여 로드록챔버 내에서 급격한 기류가 발생하는데 이는 순간적으로 압력변동방지용 밸브를 닫게 한다.As described above, in the vacuum system of the ion implantation apparatus according to the present invention, in addition to the roughing valve in front of the load lock chamber, an additional pressure fluctuation prevention valve may be installed to open the rough valve to reduce the pressure in the load lock chamber. At this time, a sudden air flow occurs in the load lock chamber due to the pressure difference between the load lock chamber and the vacuum line, which causes the pressure fluctuation valve to close instantly.

따라서, 로드록챔버의 전방에 설치된 러핑밸브가 오픈될 때 압력변동방지용 밸브가 닫혀져 로드록챔버의 오염원인 입자가 로드록챔버 내의 웨이퍼에 흡착하는 것을 방지한다. 그 결과, 본 발명은 웨이퍼의 오염을 방지하여 제조수율 및 제품의 품질 저하를 방지할 수 있다.Therefore, when the roughing valve provided in front of the load lock chamber is opened, the pressure fluctuation preventing valve is closed to prevent the particles, which are the pollutants of the load lock chamber, from adsorbing to the wafer in the load lock chamber. As a result, the present invention can prevent the contamination of the wafer to prevent degradation of production yield and product quality.

한편, 본 발명은 도시된 도면과 상세한 설명에 기술된 내용에 한정하지 않으며 본 발명의 사상을 벗어나지 않는 범위 내에서 다양한 형태의 변형도 가능함은 이 분야에 통상의 지식을 가진 자에게는 자명한 사실이다.On the other hand, the present invention is not limited to the contents described in the drawings and detailed description, it is obvious to those skilled in the art that various modifications can be made without departing from the spirit of the invention. .

Claims (2)

이온소오스챔버와 이온빔라인 챔버와, 엔드 스테이션과, 상기 엔드 스테이션에 연결된 로드록챔버와, 상기 로드록챔버에 진공라인에 의해 연결된 진공펌프 및상기 로드록챔버를 위해 상기 진공라인에 설치된 러핑밸브를 갖는 이온주입장치에 있어서,An ion source chamber and an ion beam line chamber, an end station, a load lock chamber connected to the end station, a vacuum pump connected to the load lock chamber by a vacuum line, and a roughing valve installed in the vacuum line for the load lock chamber. In the ion implantation device having, 상기 로드록챔버와 상기 러핑밸브 사이에 설치되어서, 상기 러핑밸브의 개방에 따른 상기 로드록챔버와 진공라인 사이의 급격한 압력 변동을 방지하도록 한 압력변동방지용 밸브를 갖는 것을 특징으로 하는 이온주입장치의 진공시스템.The ion injection device, characterized in that provided between the load lock chamber and the roughing valve, to prevent a sudden pressure fluctuation between the load lock chamber and the vacuum line due to the opening of the roughing valve of the ion injection device Vacuum system. 제 1 항에 있어서, 상기 얍력변동방지용 밸브가 나비밸브인 것을 특징으로 하는 이온주입장치의 진공시스템.The vacuum system of the ion implantation apparatus according to claim 1, wherein the pressure fluctuation preventing valve is a butterfly valve.
KR1019990042622A 1999-10-04 1999-10-04 vacuum system for ion implanting apparatus KR20010035858A (en)

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