KR20010024167A - Insulated waveguide and semiconductor manufacturing system - Google Patents

Abstract

SUMMARY OF THE INVENTION The present invention aims to enable high-speed cleaning of various plasma sources using microwave waveguides, as well as to obtain an insulated waveguide having a low leakage amount of microwaves and not inhibiting the transmission of microwaves. A waveguide that is coupled in a fitting structure via a fitting structure and that forms a standing wave of microwaves in the waveguide, and at least two positions at odd multiples of 1/4 of the wavelength in the waveguide of the microwave from the short end of the waveguide The coupling portion is positioned after the waveguide is insulated, and a waveguide is formed in the waveguide to form a standing wave of the microwave, and the length of the waveguide is set to an integer multiple of 1/2 of the wavelength of the waveguide, and the waveguide is It is applied to the position of an odd multiple of 1/4 of the wavelength in the waveguide of the microwave from the short end of Also it characterized in that a second portion to be positioned via the insulating coupling of the two waveguides.

Description

Insulated waveguide and semiconductor manufacturing device {INSULATED WAVEGUIDE AND SEMICONDUCTOR MANUFACTURING SYSTEM}

In the semiconductor process, high throughput and miniaturization techniques are indispensable for cost reduction and high reliability of products.

Recently, the semiconductor process technology using plasma has attracted attention, and has been applied to the etching of sub-microns and the formation of various thin films. In thin film formation technology, high-density plasma CVD apparatus enables high-speed filling between wirings with high aspect ratio. This high-density plasma CVD apparatus can change the process relatively simply by changing the gas species, and not only the SiO ₂ film but also the formation of low dielectric constant interlayer insulating films such as SiOF and amorphous carbon.

In high-density plasma CVD apparatuses, cleaning technology is an important development task for achieving high throughput and low particles. For cleaning, fluorine-based gas such as NF ₃ is generally plasma-ized.

Fig. 5 shows the cleaning speed when RF (high frequency) is applied to the plasma reaction chamber wall surface of the high density plasma CVD apparatus. From the figure, the application of RF to the wall surface of the plasma reaction chamber improves the cleaning speed. It can be seen that it is a valid means. This is because fluorine radicals and ions are generated in the vicinity of the wall of the plasma reaction chamber by applying RF, and RF increases the cleaning speed by lowering the ions generated by increasing the bias potential to the wall at the same time.

ECR plasma, surface wave plasma, and the like, which are a kind of high-density plasma, use microwave as a power source. In order to transmit this microwave, a waveguide having a smaller loss of microwave and a larger capacitance than a coaxial cable is used, and is used for high power microwave transmission such as plasma generation.

This waveguide is a hollow conductor tube, and its cross-sectional shape is generally rectangular or circular, and its material is made of a conductor such as aluminum to electrically connect an oscillator that generates microwaves and a load that absorbs microwaves. The waveguide has not only a straight shape but also a configuration of various shapes such as corner portions such as E corners and H corners, T branches, etc., which are connected to each other to transmit microwaves to a load.

It is common to use a flange or the like specified in the JlS standard for connecting these various waveguide components. The problems in connecting the waveguides are to minimize the leakage of microwaves and not to inhibit the transmission of the microwaves.

A choke flange is known as one of the structures which solve the said subject. The general structure of this choke flange is shown in FIG. As shown in Fig. 4, the choke flange is formed by attaching two waveguides 1a and 2a by providing an L-shaped waveguide 3a on the outside of one waveguide 2a. In the L-shaped waveguide 3a, the length of the waveguide parallel to the waveguide perpendicular to the waveguide is about one quarter of the microwave wavelength, and since the insulation can be inserted into the waveguide junction, this choke flange is used for insulation of the conventional waveguide. Is generally used.

However, as described above, the waveguide for transmitting microwaves is made of aluminum or the like, so that the oscillator and the load are electrically connected to each other, so that no electric action is applied to the load side to which the waveguide is joined. In other words, in the high-density plasma using microwaves, RF cannot be applied to the wall of the plasma reaction chamber in which the waveguide is installed, so that the wall of the plasma reaction chamber cannot be cleaned.

It is also possible to insulate the insulation by inserting an insulator in the waveguide junction of the choke flange, but the choke flange requires a waveguide having a length of about 1/4 of the microwave wavelength in the vertical and parallel directions to the waveguide, so that the increase in dimensions cannot be avoided. In particular, the semiconductor manufacturing apparatus is essential to use in a clean room, and the miniaturization of the apparatus is an important problem with low cost.

In addition, Japanese Patent Application Laid-Open No. 63-131401 discloses a connection of a waveguide through which microwaves pass, and Japanese Patent Application Laid-Open No. 62-126831 discloses a microwave leakage preventing structure.

SUMMARY OF THE INVENTION The present invention has been made in view of the above, and an object thereof is to enable high-speed cleaning of various plasma sources using microwave waveguides, as well as insulation that has a low leakage amount of microwaves and does not inhibit the transmission of microwaves. The present invention provides a waveguide and a semiconductor manufacturing apparatus using the insulated waveguide.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to insulated waveguides and semiconductor manufacturing apparatuses, and more particularly, to an insulated waveguide most suitable for transmitting microwaves transmitted from a transmitter to a load, and a semiconductor manufacturing apparatus such as a plasma CVD apparatus using the insulated waveguide.

1 is a cross-sectional view showing an embodiment of an insulated waveguide of the present invention;

2 is a cross-sectional view taken along line X-X of FIG. 1;

3 is a device configuration diagram when an insulated waveguide is applied to a semiconductor manufacturing apparatus;

4 is a cross-sectional view showing a conventional waveguide;

5 is a characteristic diagram showing a relationship between RF power and a cleaning speed applied to a plasma reaction chamber wall;

6 is a diagram showing a relationship between a distance from a short-circuit end and an impedance in the waveguide;

7 is a cross-sectional view showing another embodiment of the insulated waveguide of the present invention;

8 is a cross-sectional view showing yet another embodiment of the insulated waveguide of the present invention;

9 is a characteristic diagram showing the amount of microwave leakage measured at a position around an insulated waveguide according to an embodiment of the present invention;

10 is a cross-sectional view showing yet another embodiment of the insulated waveguide of the present invention;

11 is a cross-sectional view showing an embodiment of a plasma CVD apparatus using the insulated waveguide of the present invention;

12 is a schematic configuration diagram showing a system in which point A of the insulated waveguide shown in FIG. 1 is simulated in a short circuit condition;

FIG. 13 is a characteristic diagram showing the relationship between the reflection coefficient and the value of normalizing the distance between ACs of a waveguide in which the waveguide influences the microwave transmission of the waveguide by simulating in the system of FIG.

14 is a schematic configuration diagram showing a system simulating the point B of the insulated waveguide shown in FIG. 1 under an open condition;

FIG. 15 is a characteristic diagram showing the relationship between the microwave leakage rate and the value obtained by standardizing the distance between BCs of the waveguide in which the leakage rate in the waveguide is examined in the system shown in FIG. 14.

In order to achieve the above object, the insulated waveguide of the present invention has at least two waveguides coupled to each other by a fitting structure through insulation, and a waveguide is formed in the waveguide to form a standing wave of microwaves, and the microwaves are shorted from the short end of the waveguide. In which the coupling portion is positioned at an odd multiple of the wavelength of the waveguide through the insulation of at least two waveguides, or a waveguide is formed in the waveguide to form a standing wave of microwaves, and the length of the waveguide is set to the waveguide of the microwave wave. The coupling portion is set at an integer multiple of 1/2 of the medium wavelength, and the coupling portion is positioned at a position of an odd multiple of the wavelength of the waveguide of the microwave from the short end of the waveguide via insulation of at least two waveguides. .

In order to achieve the above object, the semiconductor manufacturing apparatus of the present invention generates a plasma by using a microwave oscillator for generating microwaves, a waveguide for transmitting microwaves from the microwave oscillator, and microwaves from the waveguide to execute various processes. And a high frequency oscillator for applying a high frequency to the wall surface of the plasma reaction chamber of the plasma processing apparatus, wherein a part of the waveguide is formed of an insulated waveguide that insulates the middle thereof. It is characterized by being configured as described above.

In the present invention, since at least two waveguides are coupled through insulation, high-speed cleaning of various plasma sources is possible, and since they are coupled in a fitting structure, the leakage of microwaves is small and the transmission of microwaves is not impeded. Insulated waveguides can be obtained.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Although the present invention is applicable to various semiconductor manufacturing apparatuses, for example, plasma CVD apparatuses, etching apparatuses, and the like, the present embodiment will be described taking plasma CVD apparatuses as an example.

3 shows the apparatus configuration of the plasma CVD apparatus. As shown in the figure, this configuration includes a microwave oscillator 11 for generating microwaves, an isolator 10 for absorbing reflected waves, a detector 9 for measuring incident and reflected microwave power, and a matcher matching the impedance of the load. (8), an insulating waveguide (5) for insulating waveguides, a plasma reaction chamber (6) for generating plasma and performing various processes, and an RF oscillator (7) for applying RF to the wall surface of the plasma reaction chamber (6). It is.

Other components except the RF oscillator 7 dry the wall surface of the plasma reaction chamber 6 at a high speed in a waveguide configuration for introducing microwaves as power of a plasma source into the plasma reaction chamber 6 for performing various processes. The insulated waveguide 5 is installed for the purpose of applying RF for the same.

The detail of the plasma reaction chamber 6 in which this insulated waveguide 5 was provided is shown in FIG. In the figure, 6 denotes a plasma reaction chamber in which a plasma is formed in a substantially cylindrical shape, and the plasma reaction chamber 6 includes side walls 21, a ceiling plate 22, waveguides 23a and 23b, and a gas introduction port. It consists of 27a and 27b and the insulating plate 26. As shown in FIG. The waveguides 23a and 23b for microwave introduction are integrally formed on the side wall 21, and the insulated waveguides 5 are connected to the waveguides 23a and 23b. The quartz window 28 to be sealed is installed. In the plasma reaction chamber 6, a substrate electrode 24 for holding a substrate (not shown) is provided at a position opposite to the ceiling plate 22, and the waveguides 23a and 23b are substantially parallel to the surface of the substrate. Microwaves are provided to be introduced into the plasma reaction chamber 6. In addition, the plasma reaction chamber 6 is provided on the base plate 30 via the insulating plate 26 and is evacuated by the vacuum exhaust device 29 provided below the base plate 30.

The side wall 21 is electrically insulated from the base plate 30 via the insulator 26, and the ceiling plate 22 and the substrate electrode 24 are electrically insulated from the base plate 30 at the reference potential. It is. The ceiling plate 22 and the substrate electrode 24 are connected to the high frequency power supplies 71a and 71b through which matching boxes 72a and 72b are applied, for example, to apply a high frequency voltage having a frequency of 13.56 MHz. The ceiling plate 22 is connected or grounded to the high frequency power supply 71a via the first conversion switch 73a. The side wall 21 is connected or grounded to the high frequency power supply 71a via the second conversion switch 73b. The first changeover switch 73a and the second changeover switch 73b are converted by the controller 74 when performing process processing or cleaning. The raw material gas in the process treatment or cleaning is introduced into the plasma reaction chamber 6 from the gas introduction ports 27a and 27b provided in the side wall 21.

On the disk-shaped ceiling plate 22, permanent magnets 25 are arranged in concentric circles with polarities sequentially changed to form a cusp magnetic field. On the other hand, a plurality of permanent magnets 25 are formed around the side wall 21 of the plasma reaction chamber 6 to form cusp magnetic fields by changing polarities. The material of the plasma reaction chamber 6 and the base plate 30 is made of aluminum, and although not shown in the drawing, the wall temperature is controlled to be constant by a heater or water cooling. Inside the microwave waveguides 23a and 23b, dielectrics 29 for passing microwaves are provided, respectively, and the front end portion of the dielectric 29 on the plasma reaction chamber 6 side and the inner surface of the plasma reaction chamber 6 are formed. It is installed to match approximately.

Next, the insulated waveguide 5 employed in the above-described plasma CVD apparatus will be described with reference to FIGS. 1 and 2.

As shown in the drawing, the insulated waveguide 5 is composed of a waveguide 2 on the side of the microwave oscillator 11 and a waveguide 1 on the side of the plasma reaction chamber 6, and these insulators 4 electrically separate the two. The waveguide 3 is configured to be coupled to each other through a fitting structure, and a standing wave is generated between the waveguide 1 and the waveguide 2. This waveguide 3 consists of a portion parallel to the portion perpendicular to the microwave transmission direction in the waveguide, and has a substantially L-shaped cross section, and the parallel portion is longer than the vertical portion. As shown in FIG. 2, the waveguide 3 and the insulator 4 are formed in a rectangular shape so as to surround the rectangular waveguide. The insulator 4 uses Teflon having high frequency characteristics in this embodiment, and insulates the waveguide 1 from the waveguide 2 and also serves as a spacer for fixing the waveguide 2 in the waveguide 1. I'm doing it.

The insulated waveguide 5 of the present embodiment is defined as an integer multiple of 1/2 of the microwave wavelength in which the length AC of the waveguide 3 propagates the waveguide, and the length of the insulation portion B and the short end C is It is defined as an odd multiple of 1/4 of the microwave wavelength propagating through the waveguide.

This will be described below. First, the reason why the length AC of the waveguide 3 is defined as an integer multiple of 1/2 of the microwave wavelength propagating through the waveguide will be described.

The simulation is performed by the simulation system as shown in FIG. 12 using the point A in FIG. 1 as a short-circuit condition, and the influence of the waveguide on the microwave transmission of the waveguide (when the waveguide is present causes reflection in the microwave in the waveguide). Reviewed. The result is shown in FIG. FIG. 13 shows a value obtained by normalizing the distance between ACs of the waveguide on the horizontal axis with the wavelength lambda, and the vertical axis shows the reflection coefficient of the waveguide (1 = total reflection, 0 = reflector). If the reflection coefficient is zero, the reflection of the microwave is zero, and the presence of the waveguide does not affect the microwave transmission in the waveguide, and satisfying this condition in FIG. 13 is when AC / λ = 0, 0.5, 1, that is, It can be seen that this condition is satisfied if the length of the waveguide is an integer multiple of λ / 2 (× 0, 1, 2, ...).

Next, the reason why the length of the insulation portion B and the short end C is defined as an odd multiple of 1/4 of the microwave wavelength propagating through the waveguide will be explained.

With the point B in FIG. 1 as an open condition, the simulation was performed by the simulation system as shown in FIG. 14, and the leak rate of the microwave in the waveguide was examined. The result is shown in FIG. Fig. 15 shows a value obtained by standardizing the distance between BCs of the waveguide on the horizontal axis with the wavelength lambda, and the vertical axis shows the microwave leakage rate (leakage power / input power) (the product of the microwave input amount is the actual leakage amount W). As can be seen from FIG. 15, the leakage rate of microwaves is minimal in the vicinity of BC / λ = 0.25, 0.75, 1.25, that is, the distance between BCs is an odd multiple of λ / 4 (× 1, 3, 5, ...). It can be seen that.

As can be seen from FIG. 15, the minimum leakage rate does not only mean that the distance between BCs is an odd multiple of? / 4, but has a certain allowable width. For example, think about the point of 0.25.

The leakage limit 5 cm away from the waveguide in the radial direction is 5 mW / cm ² (according to JIS standard C 9250) and leaks from one point (the most severe condition; in fact, from the insulation surface outside the insulation waveguide). Assuming a sphere of 5 cm radius,

P × α <β × (4 × π × 5 ² ) → α <100OOββ / P

(P: power (W), α: leakage rate, β: leakage limit (W / cm ² ))

When P = 1000 W and β = 5 mW / cm ² , α <0.00157, and the allowable width of the distance between BCs in FIG. 15 is 0.22λ <BC <0.263λ.

The result of measuring the microwave leakage amount of the insulated waveguide of a present Example is shown in FIG. The measurement result shown in FIG. 9 is when the sum of the incident and reflected power of the microwave is 1 kW, and the leakage amount is measured at a position 5 cm away from the exposed portion of the insulator from which the microwave leaks. As apparent from FIG. 9, the microwave leakage amount is 1 (mW / cm ² ) or less, and satisfies the specification (the microwave leakage amount is 5 (mW / cm ² ) or less) of JIS standard C925O "Microwave".

Fig. 6 shows the impedance of the waveguide short-circuited, in which the position of 1/4 wavelength from the short end of the waveguide is in the open state, and again in the 1/4 position, it is in the shorted state and is 1/4 from the short end. It can be seen that the opening and shorting are repeated periodically for each wavelength. As shown in FIG. 7, when the waveguide 3 is provided around the rectangular waveguides 1 and 2, the waveguide of an integer multiple of 1/2 wavelength of microwaves is located near the wall surface of the waveguides 1 and 2 (near the junction A). In the short circuit state, the influence on the microwave transmission in the waveguide is small, and the intensity of the microwaves propagating through the waveguide 3 is also smaller than in the waveguide. This is because when the waveguide 3 is viewed from the waveguides 1 and 2, the junction A is in a short circuit state, i.e., under the same condition as the conductor wall, and the microwave becomes difficult to enter the waveguide 3.

On the other hand, when the junction B of the waveguides 1 and 2 is positioned at an odd multiple of 1/4 wavelength from the short-circuit end C, the junction B is open and the amount of leakage of microwaves is small. When the junction part B is in the open / closed state, the current flowing vertically on the wall surface of the waveguide 3 to the junction surface becomes small, so that the radiation of the microwaves, that is, the leakage amount, is reduced.

In addition, in this embodiment, it is also meaningful to locate the insulation position B of a waveguide in a straight part. In other words, the commonly used choke flange shown in Fig. 4 has a microwave leakage rate of 0.0033 because the insulation portion of the waveguide is at the corner portion, whereas in the insulation waveguide of the present embodiment, the insulation position B is positioned at the straight portion. Therefore, the leak rate of the microwave is 0.00013 (the leak rate of the microwave is based on the simulation result), and the leakage of the microwave can be suppressed very low by placing the insulation position B of the waveguide in the straight portion.

In this manner, since the waveguide is provided in the direction along the waveguide, the dimension in the direction perpendicular to the waveguide is very small, and the waveguide can be placed close to the plasma reaction chamber, and the plasma CVD apparatus including the waveguide and the like. The semiconductor manufacturing apparatus of the present invention can be miniaturized. Moreover, since it becomes a shape (fitting structure) which inserts another waveguide through an insulator in one waveguide, it can simplify joining of waveguides. That is, in general waveguide bonding, in order to reduce the leakage of microwaves, the flange portion needs to be joined with a plurality of nuts. However, the structure of the present embodiment does not require fixing the waveguide, and the waveguide junction can be fitted into a fitting structure. This makes it simple and very easy to separate.

This property does not limit the shape of the waveguide. Therefore, the waveguide 13 may be provided in the vertical direction with respect to the waveguides 11 and 12 as shown in FIG. 8 regardless of the shape of FIG. 7. Whatever the shape, the waveguide length should be an integer multiple of 1/2 wavelength of the microwave, and the junction portion should be an odd multiple of 1/4 wavelength to reduce the current flowing vertically through the junction surface.

10 shows another embodiment of the insulated waveguide of the present invention. In the embodiment shown in the drawing, the insulating waveguide is miniaturized and integrated with the plasma reaction chamber by using a quartz window for vacuum sealing the plasma reaction chamber as the waveguide of the insulated waveguide. In the figure, the left side of the quartz 14 is a plasma reaction chamber, and this quartz 14 serves both as a vacuum seal and an insulating waveguide in the plasma reaction chamber. The quartz 14 and the waveguide 18 are fixed to the wall surface 19 of the plasma reaction chamber by the insulator 17 and the mounting jig 15, 16.

Thus, even if the waveguide is filled with a dielectric such as quartz, the law of the length AC of the waveguide and the distance BC from the short end to the waveguide connection portion does not change. That is, the length AC of the waveguide is an integer multiple of 1/2 of the microwave wavelength in the waveguide, and the distance BC from the short end to the waveguide connection portion may be an odd multiple of 1/4 of the microwave wavelength in the waveguide. Since the wavelength in a dielectric such as quartz is shortened in inverse proportion to the half power of the dielectric constant of the dielectric, when the waveguide is filled with a dielectric such as quartz, its size can be reduced.

In each of the above embodiments, the waveguide is square, but the waveguide is not limited thereto, and the waveguide may be circular or coaxial. In addition, the fixing method of the waveguide may also be fixed by an insulating bolt in addition to the fixing of the waveguide 1 into the waveguide 2 as shown in FIG. 1, and the waveguide 2 may be inserted into the waveguide 1. good. In addition, the structure of the insulator is not limited to FIGS. 1 and 10. It can be changed according to the structure of the waveguide or the mounting jig, and a space can be provided between the waveguides 1 and 2 without any insulation.

According to the present invention described above, at least two waveguides are coupled in a fitting structure via insulation, and a waveguide for forming a standing wave of microwaves is provided in the waveguide, and the wavelength in the waveguide of the microwave from the short end of the waveguide. The coupling portion is positioned at an odd multiple of 1/4 of the position via insulation of at least two waveguides, and a waveguide is formed in the waveguide to form a standing wave of the microwave, and the length of the waveguide is determined by the wavelength of the waveguide in the waveguide. The insulated waveguide and the microwave are set so that the coupling part is positioned at an integer multiple of 1/2 and the coupling portion is positioned at an odd multiple of the wavelength in the waveguide of the microwave from the short end of the waveguide. Microwave oscillator which generate | occur | produces and waveguide which transmits the microwave from the said microwave oscillator And a plasma processing apparatus for generating plasma by microwaves from the waveguide and performing various processes, and a high frequency oscillator for applying high frequency to the wall surface of the plasma reaction chamber of the plasma processing apparatus, and a part of the waveguide is It is formed of an insulated waveguide that insulates the way, and because the insulated waveguide is configured as described above, it enables high-speed cleaning of various plasma sources using microwave waveguides, as well as a small amount of microwave leakage. An insulated waveguide which does not inhibit the transmission of microwaves and a semiconductor manufacturing apparatus using the same can be obtained.

Claims (11)

In an insulated waveguide, at least two waveguides are formed by coupling through insulation, and transmitting microwaves from a transmitter to a load, Wherein said at least two waveguides are coupled in a fitting structure via insulation. In an insulated waveguide, at least two waveguides are formed by coupling through insulation, and transmitting microwaves from a transmitter to a load, A waveguide that forms a standing wave of microwaves in the waveguide, and a coupling portion insulated by at least two waveguides is located at a position of an odd multiple of the wavelength in the waveguide of the microwave from the short end of the waveguide; Insulated waveguides. In an insulated waveguide, at least two waveguides are formed by coupling through insulation, and transmitting microwaves from a transmitter to a load, A waveguide for forming a standing wave of microwaves is provided in the waveguide, and the length of the waveguide is set to an integer multiple of 1/2 of the wavelength in the waveguide of the microwave, and the wavelength in the waveguide of the microwave from the short end of the waveguide. An insulated waveguide, characterized in that the coupling portion, which has undergone insulation of at least two waveguides, is positioned at an odd number of times multiple of. The method of claim 3, wherein An insulated waveguide is disposed in the one waveguide, and the other waveguide is inserted into the insulator, and the insulated waveguide is coupled in a fitting structure. The method of claim 3, wherein The waveguide is insulated waveguide, characterized in that installed along the waveguide. The method of claim 3, wherein The waveguide is insulated waveguide, characterized in that installed in the vertical direction with respect to the waveguide. The method of claim 3, wherein And wherein the waveguide comprises a portion parallel to a portion perpendicular to the microwave transmission direction in the waveguide, the cross section being substantially L-shaped, and the parallel portion being longer than the vertical portion. The method of claim 3, wherein An insulated waveguide, wherein the insulated portion, to which the waveguides are coupled, is positioned in a straight portion of the waveguide. The method of claim 3, wherein An insulated waveguide, wherein a dielectric is disposed in the waveguide. A microwave oscillator for generating microwaves, a waveguide for transmitting microwaves from the microwave oscillator, a plasma processing apparatus for generating plasma by microwaves from the waveguide, and performing various processes, and a plasma reaction chamber of the plasma processing apparatus. In the semiconductor manufacturing apparatus provided with the high frequency oscillator which applies a high frequency to a wall surface, A semiconductor manufacturing apparatus, wherein a part of the waveguide is formed of an insulated waveguide that insulates the middle thereof, and the insulated waveguide has the structure according to any one of claims 1 to 3. The method of claim 10, The plasma processing apparatus includes a plasma reaction chamber for generating plasma therein, a waveguide part connected to the plasma reaction chamber to introduce microwaves for generating plasma, and disposed in the waveguide to transmit the microwaves, A first permanent magnet which surrounds an outer circumference of the waveguide portion and surrounds the outer circumference of the waveguide portion and forms an electron cyclotron resonance field for the microwave at least in the waveguide portion and the plasma reaction chamber, and the plasma A second permanent magnet arranged in a plurality of polarities with a different polarity around the reaction chamber, a substrate electrode disposed to face the plasma generated in the plasma reaction chamber, and holding the object to be processed by the plasma; A plurality of electric poles with respect to the ceiling plate part or the side wall part forming part of the seal A semiconductor manufacturing apparatus comprising a power supply means selectively connectable to the supply system.