JPH11204295A - Microwave plasma treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a microwave plasma treating apparatus capable of reducing the size of the whole device as small as possible even if the diameter of a reactor is large, capable of being installed in a small space, and capable of improving the treating speed of a work. SOLUTION: This plasma treating apparatus oscillates a microwave oscillator 20, radiates electric field into a treating chamber 2 from the slits 15, 15... of an antenna 11, and generates plasma in the regions corresponding to the slits 15, 15... near a sealing plate 4 in the treating chamber 2. A high frequency of 13.56 MHz is applied to electrode members 24 from a second high-frequency power supply 27 concurrently with the oscillation of the microwave oscillator 20, and plasma is generated in regions corresponding to the electrode members 24 near the sealing plate 4 in the treating chamber 2. The plasma generated in these regions is diffused from the regions and propagated to a mount base 3, and the surface of a sample W on the mount base 3 is etched by the nearly unified plasma.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for performing processing such as etching or ashing on a semiconductor substrate, a glass substrate for a liquid crystal display, or the like by using plasma generated by using microwaves.

[0002]

2. Description of the Related Art Plasma generated by giving energy to a reaction gas from the outside is widely used in a manufacturing process of an LSI or an LCD. In particular, the use of plasma has become an indispensable basic technology in the dry etching process. In general, a microwave of 2.45 GHz is used as an excitation means for generating plasma,
In some cases, 6 MHz RF (Radio Frequency) is used. The former has the advantage that a higher-density plasma can be obtained than the latter, and that no electrodes are required for plasma generation, and thus contamination from the electrodes can be prevented. However, in a plasma processing apparatus using microwaves, the area of the plasma generation region is increased,
In addition, it has been difficult to generate plasma so that the density becomes uniform. However, since the microwave plasma processing apparatus has various advantages as described above, it has been required to realize processing of a large-diameter semiconductor substrate, an LCD glass substrate, and the like by the apparatus. To satisfy this demand, the applicant of the present application has disclosed Japanese Patent Application Laid-Open No. 62-5600,
JP-A-62-99481 proposes the following apparatus.

[0003] FIG.
FIG. 8 is a side sectional view showing a microwave plasma processing apparatus of the same type as the apparatus disclosed in JP-A-62-99481, and FIG.
FIG. 2 is a plan view of the plasma processing apparatus shown in FIG. The entire rectangular box-shaped reactor 31 is formed of aluminum. A microwave introduction window is opened in the upper part of the reactor 31, and the microwave introduction window is hermetically sealed by a sealing plate 34. The sealing plate 34 is formed of a dielectric material such as quartz glass or alumina, which has heat resistance and microwave permeability and has small dielectric loss.

[0004] A rectangular box-shaped cover member 40 for covering the upper part of the reactor 31 is connected to the reactor 31. A dielectric line 41 is attached to a ceiling portion in the cover member 40,
An air gap 43 is formed between the dielectric line 41 and the sealing plate. The dielectric line 41 is formed by molding a dielectric such as a fluororesin such as Teflon (registered trademark), a polyethylene resin, or a polystyrene resin into a plate shape having a protrusion at a vertex of a substantially pentagon formed by combining a rectangle and a triangle. A waveguide 21 in which the convex portion is connected to the peripheral surface of the cover member 40.
It is fitted inside. A microwave oscillator 20 is connected to the waveguide 21, and the microwave oscillated by the microwave oscillator 20 is incident on the projection of the dielectric line 41 by the waveguide 21.

As described above, the base end side of the convex portion of the dielectric line 41 is formed into a tapered portion 41a having a substantially triangular shape in plan view, and the microwave incident on the convex portion follows the tapered portion 41a. And is spread in the width direction thereof and propagates throughout the dielectric line 41. The microwave is reflected on the end face of the cover member 40 facing the waveguide 21, and the incident wave and the reflected wave are superimposed to form a standing wave on the dielectric line 41.

[0006] The interior of the reactor 31 is a processing chamber 32,
A required gas is introduced into the processing chamber 32 from a gas introduction pipe 35 fitted in a through hole penetrating the peripheral wall of the processing chamber 32. At the center of the bottom wall of the processing chamber 32, a mounting table 33 for mounting the sample W is provided. The mounting table 33 is connected to an RF power supply 37 of several hundred KHz to several tens of MHz through a matching box 36. I have. An exhaust port 38 is provided in the bottom wall of the reactor 31 so that the inside air of the processing chamber 32 is exhausted from the exhaust port 38.

In order to perform an etching process on the surface of the sample W using such a microwave plasma processing apparatus, the inside of the processing chamber 32 is evacuated to a desired pressure by exhausting the gas through an exhaust port 38, and then a gas introduction pipe 35 is formed. To supply the reaction gas into the processing chamber 32. Next, a microwave is oscillated from the microwave oscillator 20 and introduced into the dielectric line 41 via the waveguide 21. At this time, the microwave is uniformly spread in the dielectric line 41 by the tapered portion 41a, and a standing wave is formed in the dielectric line 41. Due to this standing wave, a leakage electric field is formed below the dielectric line 41, and this is caused by the air gap 43 and the sealing plate.
The light passes through 34 and is introduced into the processing chamber 32. In this way, the microwave propagates into the processing chamber 32. This allows
Plasma is generated in the processing chamber 32, and the surface of the sample W is etched by the plasma. Thereby, even if the diameter of the reactor 31 is increased in order to process the large-diameter sample W, the microwave can be uniformly introduced to the entire region of the reactor 31 and the large-diameter sample W can be uniformly distributed. Plasma treatment can be performed.

[0008]

In the conventional microwave plasma processing apparatus, in order to uniformly spread the microwave on the dielectric line 41, the microwave projecting from the sealing plate 34 and the edge of the reactor 31 in the horizontal direction. A tapered portion 41a is provided. The tapered portion 41a has a predetermined size in accordance with the area of the dielectric line 41, that is, the diameter of the processing chamber 32. Therefore, when installing a conventional microwave plasma processing apparatus, the reactor 31
An extra horizontal space for accommodating the tapered portion 41a protruding from the peripheral edge must be secured. By the way, as the diameter of the sample W increases, a microwave plasma processing apparatus having a larger diameter of the reactor 31 is required. At this time, it is also required that the installation place of the apparatus need not be treated, that is, it can be installed in a space as narrow as possible. However, in the conventional apparatus, since the size of the tapered portion 41a is determined according to the diameter of the reactor 31, there is a problem that both of the above requirements cannot be satisfied.

In view of this, the present inventor has disclosed in Japanese Patent Application No. 9-287472, a C-shaped plan view on the surface of a sealing plate for sealing a microwave introduction window for introducing a microwave into a reactor. Is disposed, and an antenna having a plurality of slits is provided at a portion of the tubular member facing the sealing plate at a predetermined distance in the axial direction of the tubular member, and a reaction from the slit of the antenna is performed. The introduction of microwaves into the reactor eliminates the need for the tapered portion 41a described above, reduces the size of the entire apparatus, and enables uniform generation of plasma over the entire area even in a reactor having a large diameter. A plasma processing device was proposed.

However, in the microwave plasma processing apparatus disclosed in Japanese Patent Application No. 9-287472, the distance between the antenna and the sample must be relatively long in order to uniformly perform plasma processing on the entire surface of the sample. Must. Therefore, there is a limit to improving the speed of processing a sample.

The present invention has been made in view of such circumstances, and an object thereof is a surface of a sealing member for sealing a container, wherein a tubular member is formed into a C shape or a spiral shape. A portion facing an area surrounded by a bent portion of the antenna, a configuration including an electrode member that is electrically insulated from the antenna and a power supply that applies an electric field to the electrode member, or A configuration including a waveguide connected to a portion of the surface of the sealing member facing a region surrounded by the bent portion of the antenna, and a microwave oscillator that oscillates microwaves into the waveguide. Accordingly, even if the diameter of the reactor is large, the size of the entire apparatus can be reduced as much as possible, the microwave plasma processing apparatus can be installed in a small space, and the processing speed of an object to be processed can be improved. To do For the purpose.

[0012]

According to a first aspect of the present invention, there is provided a microwave plasma processing apparatus in which a tubular member is bent in a C shape or a spiral shape so as to face a surface of a sealing member for sealing a part of a container. An antenna formed is arranged, microwaves are incident on the antenna, microwaves are emitted to a region corresponding to the antenna in the container to generate plasma, and an object to be processed is generated by the generated plasma. A microwave plasma processing apparatus for processing, the surface of the sealing member,
In a portion opposed to a region surrounded by a bent portion of the antenna, an electrode member electrically insulated from the antenna and a power supply for applying an electric field to the electrode member are provided. .

A microwave plasma processing apparatus according to a second invention is characterized in that, in the first invention, the power supply is a high frequency AC power supply.

According to the first and second aspects of the present invention, an antenna in which a tubular member is bent in a C-shape or a spiral shape is disposed on the surface of a sealing member for sealing a container, and a micro-element is provided in the antenna. Plasma is generated in the container by oscillating waves and emitting microwaves from the antenna to a region facing the antenna in the container. Since the microwave can be directly incident on the antenna in this manner, the antenna does not protrude from the container, and thus the horizontal dimension of the microwave plasma processing apparatus can be reduced as much as possible. .

Further, a high frequency electric field of about 13.56 MHz is applied to an electrode member, which is electrically insulated from the antenna, at a portion facing a region surrounded by the bent portion of the antenna. The plasma is generated in a region of the container facing the electrode member. As described above, since plasma is generated in the region facing the electrode member in the container and the surrounding region, even if the distance between the antenna and the object is reduced, the plasma is sufficiently diffused, and the object is processed. And becomes substantially uniform in the same plane. Therefore, the vertical dimension of the microwave plasma processing apparatus can be reduced, and required plasma processing can be performed at a high processing speed.

Further, separately from the generation of the plasma by the microwaves emitted from the antenna, the plasma can be generated by applying a high-frequency electric field to the electrode member. , It is possible to make the plasma processing speed uniform in the central part and the peripheral part of the object without adjusting the power of the microwave emitted from the antenna.

According to a third aspect of the present invention, in the microwave plasma processing apparatus according to the first aspect, the power source is a low-frequency AC power source.

According to the first and third aspects of the present invention, microwaves are oscillated in the antenna, plasma is generated in a region facing the antenna in the container, and the electrode member is
A low frequency electric field of 200 KHz to 2 MHz, preferably 400 KHz is applied. In a negative electric field, the positively charged ions in the plasma move toward the center of the bent portion of the antenna, and in a positive electric field, move in the opposite direction. As a result, the plasma diffusion efficiency is improved while the plasma state is kept stable, and substantially uniform plasma can be obtained in the same plane as the object even when the distance between the antenna and the object is reduced. . Therefore, as before, the size of the microwave plasma processing apparatus in the vertical direction can be reduced, and the required plasma processing can be performed at a high processing speed.

When performing anisotropic etching having directivity in the thickness direction of the object to be processed, a low-frequency bias (V _a sin (V _a sin ()) is applied to a mounting table provided for mounting the object in a container. ωt): ω is an angular frequency, and t is time), whereby ions in the plasma are attracted onto the object to be processed. When anisotropic etching is performed by the microwave plasma processing apparatus according to the first and third inventions, a bias (−V _b sin (ωt)) opposite to the low frequency bias applied to the mounting table is applied to the above-described electrode member. Apply. Thus, ions in the plasma will be receiving the potential at the central portion of the stage (V _a + V _b), it improves the anisotropy of the etching process.

In a microwave plasma processing apparatus according to a fourth aspect, in the first aspect, the power supply is a DC power supply.

According to the first and fourth aspects of the present invention, microwaves are oscillated in the antenna to generate plasma in a region facing the antenna in the container, and a negative DC electric field is applied to the above-described electrode member. . Thereby, the positively charged ions in the plasma move toward the center of the bent portion of the antenna, so that the plasma is made uniform. Therefore, the distance between the antenna and the object can be reduced, the size of the microwave plasma processing apparatus in the vertical direction can be reduced, and the plasma processing speed of the object can be improved.

A microwave plasma processing apparatus according to a fifth aspect of the present invention has an antenna in which a tubular member is bent in a C shape or a spiral shape so as to face a surface of a sealing member for sealing a part of a container. Microwave plasma processing in which microwaves are incident on the antenna, emit microwaves to a region corresponding to the antenna in the container to generate plasma, and process the object with the generated plasma. An apparatus, comprising: a waveguide connected to a portion of a surface of the sealing member facing a region surrounded by a bent portion of the antenna; and a microwave oscillating microwave into the waveguide. And an oscillator.

According to the fifth aspect of the present invention, microwaves are introduced into the container from an antenna formed by bending a tubular member into a C shape or a spiral shape to generate plasma. The horizontal dimensions of the device can be made as small as possible. In addition, microwaves are introduced into the container from the waveguide connected to a portion of the surface of the sealing member that seals the container and facing a region surrounded by the bent portion of the antenna to generate plasma. Generate. As described above, since plasma is generated in the region facing the opening of the waveguide in the container and in the region around it, even if the distance between the antenna and the object to be processed is shortened, the plasma is sufficiently diffused, and the plasma is generated. It becomes substantially uniform in the same plane as the processing object. Therefore, required plasma processing can be performed at a high processing speed.

Further, separately from the generation of the plasma by the microwave emitted from the antenna, the plasma can be generated by introducing the microwave from the waveguide into the container. By controlling the power of the microwave to be introduced, the speed of the plasma processing at the central portion and the peripheral portion of the object can be uniform without adjusting the power of the microwave emitted from the antenna.

[0025]

Embodiments of the present invention will be specifically described below with reference to the drawings. (Embodiment 1) FIG. 1 is a side sectional view showing the structure of a microwave plasma processing apparatus according to the present invention, and FIG. 2 is a plan view of the microwave plasma processing apparatus shown in FIG. The entire bottomed cylindrical reactor 1 is made of aluminum. A microwave introduction window is opened at the upper part of the reactor 1, and the microwave introduction window is sealed in an airtight state by a sealing plate 4. The sealing plate 4 is formed of a dielectric material such as quartz glass or alumina, which has heat resistance and microwave permeability and has small dielectric loss.

The above-mentioned sealing plate 4 has a cover member 10 formed of a conductive metal in the shape of a circular lid and having a circular hole formed in the center, and the cover member 10 is fitted to the reactor. It is fixed on 1. An antenna 11 for introducing microwaves into the reactor 1 is provided around the hole of the cover member 10. The antenna 11 is fixed to the upper surface of the cover member 10, and has a waveguide antenna section 12 having a U-shaped cross section and a plurality of antennas formed in a portion of the cover member 10 facing the waveguide antenna section 12. Slits 15, 15, ... are provided.

One end of the waveguide antenna section 12 is connected to a waveguide 21 connected to a microwave oscillator 20, and the other end of the waveguide antenna section 12 is closed. One end of the waveguide-type antenna unit 12 is linear, and the other end is arc-shaped (C-shaped) or one-turn spiral (arc-shaped in FIG. 1).
The curved portion 12a is formed to have an appropriate curvature.

The microwave oscillated by the microwave oscillator 20 is incident on the waveguide type antenna section 12 of the antenna 11 via the waveguide 21. This incident wave is superimposed on the reflected wave from the closed end of the waveguide antenna section 12, and a standing wave is generated in the waveguide antenna section 12. Accordingly, n · λg / 2 (n is an integer and n ≧ n) is applied to the peripheral wall of the waveguide antenna section 12 from the closed end of the waveguide antenna section 12.
A current having a maximum value flows for each of 0 and λg (wavelength of a microwave propagating in the antenna).

At this time, the mode of the microwave propagating in the waveguide-type antenna unit 12 is changed to a rectangle T which is the fundamental propagation mode.
In order to achieve E10, the size of the waveguide antenna unit 12 is set to 27 m in height according to the microwave frequency of 2.45 GHz.
m, width 96 mm. The microwave in this mode propagates through the waveguide antenna unit 12 with almost no energy loss. When the sealing plate 4 having a diameter of 380 mm is used, the waveguide type antenna unit 1 is positioned from the center of the bent part 12a.
The dimension up to the center in the width direction of 2 is about 120 mm.

FIG. 3 shows the slit 1 shown in FIG. 1 and FIG.
It is explanatory drawing explaining 5, 15, .... As shown in FIG. 3, the slits 15, 15,...
The center axis 16 of the bent portion 12a is
It is set up so that it is orthogonal to, and each slit 15,15,…
Is set at a position of n · λg / 2 from the closed end of the waveguide antenna unit 12. As described above, the slits 15, 15,... Are opened at positions where the maximum value of the current flowing through the peripheral wall of the waveguide antenna section 12 is shown, and the potential difference generated across the slits 15, 15,. By each slit
An electric field is emitted from 15, 15,..., And the electric field penetrates the sealing plate 4 and is introduced into the reactor 1 (both refer to FIG. 1). That is, microwaves for generating plasma are introduced into the reactor 1. When the waveguide type antenna section 12 having the above-described dimensions is used, each slit 15, 15,.
, and the distance from the closed end of the waveguide antenna unit 12 to the center of the slits 15, 15,... is 79.2 mm.
Established to be an integral multiple of.

In this embodiment, the slits 15, 1
5, ... are opened so as to be orthogonal to the central axis 16 of the bent portion 12a. However, the present invention is not limited to this, and a slit may be opened so as to cross the central axis 16 at an angle. , Central axis
It may be opened in parallel with 16. As described later, the wavelength of the microwave propagating in the antenna 11 changes due to the plasma generated in the reactor 1, and the waveguide-type antenna 12
The position indicating the maximum value of the current flowing through the peripheral wall may change, but in the slit opened diagonally on the central axis 16 or the slit opened in parallel with the central axis 16, the maximum value of the current is changed. The indicated change in position can be captured in the area of the slit.

As described above, each of the slits 15, 15,.
Since the cover member 10 is provided substantially radially, the microwave is uniformly introduced into the entire region in the reactor 1. On the other hand, FIG.
As shown in the above, since the antenna 11 is provided on the cover member 10 having the same diameter as the diameter of the reactor 1 without protruding from the periphery of the cover member 10, even if the diameter of the reactor 1 is large, The size of the microwave plasma processing apparatus can be as small as possible and can therefore be installed in a small space.

A ring-shaped insulating member 24 is fitted in the hole formed at the center of the cover member 10 described above.
A disk-shaped electrode member 25 having substantially the same thickness as that of the cover member 10 is fitted in the inside of the electrode member 24. When the antenna 11 having the above dimensions is used, the diameter of the electrode member 25 is approximately 100 mm. The electrode member 25 is connected to a second high-frequency power supply 27 by a coaxial cable.
A high frequency of 13.56 MHz is applied to 25.

The reactor 1 is provided with a through hole penetrating the peripheral wall of the processing chamber 2, and a required gas is introduced into the processing chamber 2 from a gas introduction pipe 5 fitted in the through hole. . At the center of the bottom wall of the processing chamber 2, a mounting table 3 on which the sample W is mounted is provided so as to face the electrode member 25, and the mounting table 3 is provided with a first high frequency power supply 7 via a matching box 6. It is connected. An exhaust port 8 is provided on the bottom wall of the reactor 1 so that the inside air of the processing chamber 2 is discharged from the exhaust port 8.

In order to perform an etching process on the surface of the sample W using such a microwave plasma processing apparatus, the inside of the processing chamber 2 is evacuated from the exhaust port 8 to a desired pressure, and then the gas introduction pipe 5 To supply the reaction gas into the processing chamber 2. Next, a microwave of 2.45 GHz is oscillated from the microwave oscillator 20, and is radiated through the waveguide 21 to the antenna.
Introduced into 11, where standing waves are formed. Due to the standing waves, the processing chamber 2 is separated from the slits 15, 15,.
An electric field is radiated into the inside, whereby plasma is generated in each area near the sealing plate 4 in the processing chamber 2 and corresponding to the slits 15, 15,.

At the same time as the oscillation of the microwave oscillator 20, 13.56 MHz is applied from the second high frequency power source 27 to the electrode member 25.
A high frequency of z is applied to generate plasma in a region near the sealing plate 4 in the processing chamber 2 and corresponding to the electrode member 25. The plasma generated in these regions propagates to the mounting table 3 while diffusing from the respective regions, and the surface of the sample W on the mounting table 3 is etched by the substantially uniform plasma.
As described above, plasma is also generated in a region corresponding to the central portion of the antenna 11, and therefore, even when the distance between the mounting table 3 and the sealing plate 4 is short, that is, when the diffusion distance is short. Even so, substantially uniform plasma can be obtained in the same plane as the surface of the mounting table 3. Thereby, the speed of the plasma processing can be improved.

Further, the microwave oscillator 20 oscillates and generates a plasma in the processing chamber 2 by applying a high-frequency electric field to the electrode member 25 separately from the generation of the plasma by the microwave emitted from the antenna 11. By controlling the power of the high-frequency electric field applied to the electrode member 25, the plasma processing at the central portion and the peripheral portion of the workpiece can be performed without adjusting the power of the microwave oscillated from the microwave oscillator 20. Speed can be made uniform.

(Second Embodiment) FIG. 4 is a side sectional view showing a second embodiment, in which a second microwave oscillator 22 is used in place of the second high frequency power supply 27 described above.
In the figure, parts corresponding to those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted. As shown in FIG.
One end of a cylindrical second waveguide 23 is inserted into the circular hole opened at the center of the second waveguide with an insulating member 24 interposed therebetween, and the other end of the second waveguide 23 is It is connected to a second microwave oscillator 22 for oscillating a microwave of 2.45 GHz.

In such a microwave plasma processing apparatus, as before, the microwave oscillator 20 supplies 2.45 G
Hz microwaves are oscillated, introduced into the antenna 11 through the waveguide 21, and the electric field is radiated into the processing chamber 2 from the slits 15, 15,.
In the vicinity of the inner sealing plate 4 and the slits 15, 15,.
A plasma is generated in each of the regions corresponding to. In addition, a microwave of 2.45 GHz is oscillated from the second microwave oscillator 22, guided to the center of the sealing plate 4 by the second waveguide 23, and introduced into the processing chamber 2 therefrom. As a result, plasma is generated in a region near the sealing plate 4 in the processing chamber 2 and corresponding to the opening of the second waveguide 23. Thereby, even when the distance between the mounting table 3 and the sealing plate 4 is short, substantially uniform plasma can be obtained in the same plane as the surface of the mounting table 3 and the plasma processing speed is improved. Can be done.

Further, the microwave oscillator 20 oscillates and the second microwave oscillator 22 oscillates separately from the plasma generated by the microwaves emitted from the antenna 11, and the second waveguide 23 oscillates from the processing chamber 2. Since the plasma introduced into the processing chamber 2 can be generated by the microwaves introduced into the microwave, the microwaves oscillated from the microwave oscillator 20 are controlled by controlling the power of the microwaves oscillated from the second microwave oscillator 22. It is possible to make the plasma processing speed uniform in the central part and the peripheral part of the object to be processed without adjusting the power.

(Embodiment 3) FIG. 5 is a side sectional view showing Embodiment 3 in which a DC voltage is applied to the electrode member 25 by a DC power supply 39 instead of the high-frequency power supply 27 shown in FIG. It has been done. In the figure, parts corresponding to those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted. As shown in FIG. 5, the electrode member 25 is connected to a negative terminal of a DC power supply 39, and a predetermined negative voltage is applied from the DC power supply 39.

In such a microwave plasma processing apparatus, as before, the microwave oscillator 20 supplies 2.45 G
Hz microwaves are oscillated, introduced into the antenna 11 through the waveguide 21, and the electric field is radiated into the processing chamber 2 from the slits 15, 15,.
In the vicinity of the inner sealing plate 4 and the slits 15, 15,.
A plasma is generated in each of the regions corresponding to. Further, a negative voltage is applied from the DC power supply 39 to the electrode member 25 for a predetermined time to move the positive ions in the plasma generated as described above toward the central axis of the processing chamber 2. by this,
Even when the distance between the mounting table 3 and the sealing plate 4 is short, substantially uniform plasma can be obtained in the same plane as the surface of the mounting table 3 and the speed of the plasma processing can be improved. it can.

(Fourth Embodiment) FIG. 6 is a side sectional view showing a fourth embodiment, in which a low-frequency power supply 28 replaces the second high-frequency power supply 27 shown in FIG.
Is applied. In the figure, parts corresponding to those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted. As shown in FIG. 6, the electrode member 25 is connected to the output terminal of the low-frequency power source 37,
A low frequency of Hz is applied.

In such a microwave plasma processing apparatus, the microwave oscillator 20 outputs 2.45 G
Hz microwaves are oscillated, introduced into the antenna 11 through the waveguide 21, and the electric field is radiated into the processing chamber 2 from the slits 15, 15,.
In the vicinity of the inner sealing plate 4 and the slits 15, 15,.
A plasma is generated in each of the regions corresponding to. Further, a low frequency of 400 KHz is applied to the electrode member 25 from the low frequency power supply 37. When such a low-frequency electric field is applied, the positive ions in the plasma generated in the processing chamber 2 move toward the center of the processing chamber 2 in the case of a negative electric field, and move in the opposite direction in the case of a positive electric field. Move to the side. Therefore, it is possible to improve the plasma diffusion efficiency while maintaining the state of the generated plasma stably. This, as before,
Even when the distance between the mounting table 3 and the sealing plate 4 is short, substantially uniform plasma can be obtained in the same plane as the surface of the mounting table 3 and the speed of the plasma processing can be improved. it can.

In the present embodiment, a low frequency of 400 KHz is applied from the low frequency power supply 37 to the electrode member 25. However, the present invention is not limited to this, and the present invention is not limited to this.
A low-frequency electric field of 2 MHz may be applied.

[0046]

As described above in detail, the first, second and fifth embodiments are described.
In the microwave plasma processing apparatus according to the present invention, even if the diameter of the reactor is large, the size of the entire apparatus can be made as small as possible, and the apparatus can be installed in a small space. Plasma is also generated in the area corresponding to the area surrounded by the part, and even if the distance between the antenna and the object is reduced, the plasma is sufficiently diffused and is substantially uniform in the same plane as the object. The required plasma processing can be performed at a high processing speed.

Further, apart from the generation of plasma by the microwaves emitted from the antenna, the plasma can be generated by applying a high-frequency electric field to the electrode member. , It is possible to make the plasma processing speed uniform in the central part and the peripheral part of the object without adjusting the power of the microwave emitted from the antenna. Similarly, separately from the generation of plasma by microwaves emitted from the antenna, plasma can be generated by introducing microwaves from the waveguide into the container, so that the plasma is introduced into the waveguide. By controlling the power of the microwave, the plasma processing speed at the central portion and the peripheral portion of the object can be made uniform without adjusting the power of the microwave emitted from the antenna.

In the microwave plasma processing apparatus according to the third aspect of the present invention, by applying a low-frequency AC electric field, the plasma is directed toward the center of the region surrounded by the bent portion of the antenna and to the opposite side thereof. In order to improve the diffusion efficiency of the plasma by moving the ions, the state of the generated plasma is maintained stably, and even if the distance between the antenna and the object is reduced, the plasma is sufficiently diffused and the It becomes substantially uniform in the same plane as the processing object, and required plasma processing can be performed at a high processing speed. Further, anisotropy can be improved in the etching treatment.

In the microwave plasma processing apparatus according to the fourth aspect of the present invention, by applying a DC electric field, ions in the plasma are moved to the center side of the region surrounded by the bent portion of the antenna, and the plasma is processed. In order to improve the diffusion efficiency, even if the distance between the antenna and the object to be processed is reduced, the plasma is sufficiently diffused and becomes substantially uniform in the same plane as the object to be processed. The present invention has an excellent effect that it can be performed.

[Brief description of the drawings]

FIG. 1 is a side sectional view showing a structure of a microwave plasma processing apparatus according to the present invention.

FIG. 2 is a plan view of the microwave plasma processing apparatus shown in FIG.

FIG. 3 is an explanatory diagram illustrating a slit shown in FIGS. 1 and 2.

FIG. 4 is a side sectional view showing a second embodiment.

FIG. 5 is a side sectional view showing a third embodiment.

FIG. 6 is a side sectional view showing a fourth embodiment.

FIG. 7 is a side sectional view showing a microwave plasma processing apparatus of the same type as a conventional apparatus.

8 is a plan view of the plasma processing apparatus shown in FIG.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 reactor 2 processing chamber 3 mounting table 4 sealing plate 10 cover member 11 antenna 12 waveguide antenna section 12a curved section 15 slit 20 microwave oscillator 21 waveguide 22 second microwave oscillator 23 second waveguide Tube 24 Insulation member 25 Electrode member W Sample

Claims (5)

[Claims] 1. An antenna having a tubular member bent in a C-shape or a spiral shape is disposed to face a surface of a sealing member for sealing a part of a container. A microwave plasma processing apparatus that receives a wave, emits a microwave to a region corresponding to an antenna in the container to generate plasma, and processes an object to be processed by the generated plasma, On the surface, a portion opposed to a region surrounded by a bent portion of the antenna includes an electrode member electrically insulated from the antenna, and a power supply for applying an electric field to the electrode member. A microwave plasma processing apparatus, characterized in that: 2. The microwave plasma processing apparatus according to claim 1, wherein the power supply is a high frequency AC power supply. 3. The microwave plasma processing apparatus according to claim 1, wherein the power supply is a low-frequency AC power supply. 4. The microwave plasma processing apparatus according to claim 1, wherein said power supply is a DC power supply. 5. An antenna in which a tubular member is bent in a C-shape or a spiral shape is disposed so as to face a surface of a sealing member for sealing a part of a container, and a micro-element is provided in the antenna. A microwave plasma processing apparatus that receives a wave, emits a microwave to a region corresponding to an antenna in the container to generate plasma, and processes an object to be processed by the generated plasma, A microwave comprising: a waveguide connected to a surface, which is opposed to a region surrounded by a bent portion of the antenna, and a microwave oscillator that oscillates microwaves into the waveguide. Wave plasma processing equipment.