KR20010019015A - Plasma polymerization system - Google Patents

Plasma polymerization system Download PDF

Info

Publication number
KR20010019015A
KR20010019015A KR1019990035214A KR19990035214A KR20010019015A KR 20010019015 A KR20010019015 A KR 20010019015A KR 1019990035214 A KR1019990035214 A KR 1019990035214A KR 19990035214 A KR19990035214 A KR 19990035214A KR 20010019015 A KR20010019015 A KR 20010019015A
Authority
KR
South Korea
Prior art keywords
gas
chamber
plasma polymerization
deposition chamber
gas inlet
Prior art date
Application number
KR1019990035214A
Other languages
Korean (ko)
Inventor
안승표
Original Assignee
구자홍
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 구자홍, 엘지전자 주식회사 filed Critical 구자홍
Priority to KR1019990035214A priority Critical patent/KR20010019015A/en
Publication of KR20010019015A publication Critical patent/KR20010019015A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/62Plasma-deposition of organic layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502Flow conditions in reaction chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/338Changing chemical properties of treated surfaces
    • H01J2237/3382Polymerising

Abstract

PURPOSE: A plasma polymerization device is provided to improve use efficiency of gas, deposit a polymerization film of uniformed quality, and effectively decrease sticking of gas particles to inside of a chamber by smoothly and uniformly forming gas flow in a deposition chamber. CONSTITUTION: A plasma polymerization device comprises a gas infusion hole (3) in a deposition chamber (20) and an exhaust port (4) which is symmetrically positioned against the gas infusion hole (3) along the direction of gas flowing (5). A plasma polymerization device of the present invention improve use efficiency of gases and deposit a polymerization film of unformed quality by smoothly and uniformly forming gas flow inside a deposition chamber. Particularly, phenomena that gas particles are stuck to inside the chamber can be effectively decreased.

Description

플라즈마중합처리장치{PLASMA POLYMERIZATION SYSTEM}Plasma Polymerization Processing Unit {PLASMA POLYMERIZATION SYSTEM}

본 발명은 플라즈마중합처리장치에 관한 것이다.The present invention relates to a plasma polymerization apparatus.

플라즈마를 이용하여 금속판 등의 시료 표면을 박막코팅 처리하면 경도, 내마모성 등이 뛰어난 피복층이 형성된다. 피복층이 형성된 제품은 자기디스크, 광디스크, 초경질공구 등으로 사용된다. 또한 강철판 표면에 형성된 도장막에 플라즈마처리를 하면 경질화되고, 내구성, 내식성 등이 뛰어난 도장 강판이 얻어진다. 특히, 시료 표면에 고분자중합처리를 하여 친수성 또는 소수성을 향상시키는 표면개질 효과를 얻을 수 있으며, 이렇게 표면개질된 물질은 다양한 범위에 응용되고 있다.When a thin film is coated on the surface of a sample such as a metal plate using plasma, a coating layer having excellent hardness, wear resistance, and the like is formed. Products with a coating layer are used for magnetic disks, optical disks, ultra hard tools, and the like. In addition, when the coating film formed on the surface of the steel sheet is subjected to plasma treatment, the coated steel sheet is hardened and excellent in durability, corrosion resistance and the like is obtained. In particular, the surface modification effect of improving the hydrophilicity or hydrophobicity can be obtained by polymerizing the surface of the sample, and the surface-modified material has been applied to various ranges.

일본공개특허공보 평6-136506호에 나타난 종래의 플라즈마중합처리장치는 한 벌의 풀림롤(11)과 감김롤(12)과 한 쌍의 텐션롤(13, 14)과 지지구(15)가 배치된 이송챔버(10)와, 시료에 대하여 증착이 이루어지는 증착챔버(20)와, 상기 증착챔버 내에 설치된 롤형태의 전극(21) 및 롤형태의 전극에 대향 배치된 대향전극(22)과, 상기 이송챔버 및 증착챔버 사이에 마련되어 있는 절연성의 차폐판(30)과, 상기 차폐판에 형성되어 있고 이송챔버와 증착챔버의 압력차를 유지하도록 하는 두 개의 차압구(31, 32)와, 상기 이송챔버 및 증착챔버의 압력분위기를 제어하는 진공펌프(17, 18)와, 상기 증착챔버에 원료가스를 주입하는 가스주입구(23)와, 상기 이송챔버 및 증착챔버에 접속된 배기구(16, 24)로 구성되어 있다.In the conventional plasma polymerization apparatus shown in Japanese Patent Laid-Open No. 6-136506, a pair of unwinding rolls 11, a winding roll 12, a pair of tension rolls 13, 14, and a supporter 15 A transfer chamber 10 arranged, a deposition chamber 20 in which deposition is performed on the sample, a roll-shaped electrode 21 provided in the deposition chamber, and an opposite electrode 22 disposed opposite to the roll-shaped electrode; An insulating shield plate 30 provided between the transfer chamber and the deposition chamber, two differential pressure ports 31 and 32 formed on the shield plate to maintain a pressure difference between the transfer chamber and the deposition chamber; Vacuum pumps 17 and 18 for controlling the pressure atmosphere of the transfer chamber and the deposition chamber, a gas inlet 23 for injecting raw material gas into the deposition chamber, and exhaust ports 16 and 24 connected to the transfer chamber and the deposition chamber. It consists of).

상기 장치에 있어서 중합처리되는 띠형 금속재(1)는 이송챔버 내의 풀림롤로부터 이송되어 한쪽의 차압부를 지나 증착챔버에 도입되며, 상기 롤형태의 전극으로 이동하여 상기 대향전극 부근을 통과한 후 다른쪽 차압부를 지나 이송챔버 내의 감김롤로 이송된다. 상기 장치는 이송챔버로부터 증착챔버에 이송되는 띠형 금속재에 고주파방전에 의한 플라즈마 중합처리를 하고 다시 이송챔버로 상기 띠형 금속재를 돌려보내는 과정에서 상기 증착챔버의 압력분위기는 글로우(glow) 방전분위기로 하고, 이송챔버의 압력분위기는 증착챔버 보다 낮은 비글로우방전분위기로 하는 것을 특징으로 하고 있다.In the apparatus, the band-shaped metal material 1 which is polymerized is transferred from the unwinding roll in the transfer chamber and introduced into the deposition chamber through one of the differential pressure portions, and moves to the roll-shaped electrode to pass near the counter electrode and then to the other side. It is conveyed by the winding roll in a conveyance chamber past a differential pressure part. The apparatus is characterized in that the pressure atmosphere of the deposition chamber is a glow discharge atmosphere in the process of performing a plasma polymerization treatment by a high frequency discharge on the band metal material transferred from the transfer chamber to the deposition chamber and returning the band metal material to the transfer chamber. The pressure atmosphere of the transfer chamber is characterized by a non-glow discharge atmosphere lower than that of the deposition chamber.

플라즈마 방전은 그 방전의 종류에 대응하는 특정한 압력분위기에서 발생하는 경향을 갖고 있다. 예를 들면 플라즈마 중합 반응은 일반적으로 10-3~ 10 torr의 압력분위기일 때 발생하기 쉽고, 이 압력분위기를 벗어날 때 글로우방전이 발생하기 어렵다. 따라서 띠형 도전성 금속재를 중합처리하는 경우라도 이송챔버 영역과 증착챔버 영역을 구분하고, 상기 차압구에 의하여 각각의 영역을 다른 압력분위기로 유지하면서 증착챔버에서는 10-3~ 10 torr의 압력분위기로 하고, 이송챔버에서는 상기 범위 이외의 압력분위기로 하면 증착챔버에서는 글로우방전이 발생하지만 이송챔버에서는 글로우방전이 발생하기 어려우므로 이상방전을 억제할 수 있다고 적고 있다.Plasma discharges tend to occur in specific pressure atmospheres corresponding to the type of discharge. For example, the plasma polymerization reaction is generally easy to occur in a pressure atmosphere of 10 −3 to 10 torr, and glow discharge is less likely to occur when the pressure is outside the pressure atmosphere. Therefore, even in the case of polymerizing the band-shaped conductive metal material, the transfer chamber region and the deposition chamber region are divided, and each pressure region is maintained at a different pressure atmosphere by the pressure differential, and the pressure chamber is 10 -3 to 10 torr in the deposition chamber. In the transfer chamber, if the pressure atmosphere is outside the above range, glow discharge occurs in the deposition chamber, but glow discharge hardly occurs in the transfer chamber. Therefore, abnormal discharge can be suppressed.

상기의 종래의 플라즈마중합처리장치는 가스주입구(23)와 배기구(진공흡입구)(24)가 비대칭적으로 형성되어 있어 증착챔버 내 가스의 흐름이 방전영역 전체에서 균일하게 형성되지 않는다. 이러한 경우 시료 표면에 증착되는 중합막의 품질이 좋지 못할 뿐만 아니라 주입되는 가스의 이용 효율도 나빠져서 가스 밀도가 높은 부위에서는 반응하지 못하고 그대로 배기되어 버리는 문제점이 있다.In the conventional plasma polymerization processing apparatus, the gas inlet 23 and the exhaust port (vacuum inlet) 24 are formed asymmetrically so that the flow of gas in the deposition chamber is not uniformly formed throughout the discharge region. In this case, not only the quality of the polymer film deposited on the surface of the sample is poor, but also the use efficiency of the injected gas is deteriorated, and thus there is a problem in that the gas is not reacted and exhausted as it is at high gas density.

따라서 본 발명은 증착챔버 내의 가스 흐름을 균일하게 형성시킴으로써 가스의 이용 효율을 향상시키고 균일한 품질의 중합막을 증착하는 플라즈마중합처리장치를 제공하는데 그 목적이 있다.Accordingly, an object of the present invention is to provide a plasma polymerization apparatus for uniformly forming a gas flow in a deposition chamber to improve gas utilization efficiency and deposit a polymer film having a uniform quality.

도 1은 종래의 플라즈마중합처리장치를 나타내는 모식도이다.1 is a schematic diagram showing a conventional plasma polymerization processing apparatus.

도 2는 종래 기술에 의한 챔버구조를 나타내는 모식도로서,Figure 2 is a schematic diagram showing a chamber structure according to the prior art,

도 2a는 가스주입구에서 배기구로 가스유동을 보여주고,Figure 2a shows the gas flow from the gas inlet to the exhaust port,

도 2b는 도 2a에 나타난 가스유동을 다른 방향에서 보여주고 있다.FIG. 2B shows the gas flow shown in FIG. 2A in a different direction.

도 3은 본 발명에 의한 플라즈마중합처리장치의 개략도이다.3 is a schematic view of a plasma polymerization apparatus according to the present invention.

도 4는 본 발명에 의한 챔버구조를 나타내는 모식도로서,Figure 4 is a schematic diagram showing a chamber structure according to the present invention,

도 4a는 챔버 내의 가스유동을 보여주며,4A shows the gas flow in the chamber,

도 4b는 가스주입구의 확대도이며,Figure 4b is an enlarged view of the gas inlet,

도 4c는 도 4a에 나타난 가스유동을 다른 방향에서 보여주고 있다.FIG. 4C shows the gas flow shown in FIG. 4A in another direction.

*** 도면의 주요 부분에 대한 부호의 설명 ****** Explanation of symbols for the main parts of the drawing ***

1:시료 2:가스유입라인1: sample 2: gas inlet line

2a:가스분사구 2b:가스공급2a: gas injection hole 2b: gas supply

3:가스주입구 4:배기구3: gas inlet port 4: exhaust port

5:가스유동 6a:대향전극5: gas flow 6a: counter electrode

6b:대향전극 8:풀림챔버6b: counter electrode 8: loosening chamber

9:감김챔버 10:이송챔버9: winding chamber 10: transfer chamber

11:풀림롤 12:감김롤11: Unwinding Roll 12: Winding Roll

13:텐션롤 14:텐션롤13: Tension roll 14: Tension roll

15:지지구 16:배기구15: support 16: exhaust vent

17:진공펌프 18:진공펌프17: vacuum pump 18: vacuum pump

20:증착챔버 21:롤상의 전극20: deposition chamber 21: electrode on the roll

22:대향전극 23:가스주입구22: counter electrode 23: gas inlet

24:배기구 30:차폐판24: exhaust vent 30: shield plate

31:차압구 32:차압구31: Differential pressure port 32: Differential pressure port

본 발명은 플라즈마중합처리장치에 관한 것으로서, 상기의 문제점을 해결하기 위하여 증착챔버 내의 가스주입구와, 상기 가스 주입구에 대하여 가스 유동 방향을 따라 대칭적으로 위치한 배기구로 이루어지는 챔버구조를 포함하여 구성되는 플라즈마중합처리장치를 제공한다.The present invention relates to a plasma polymerization apparatus, and to solve the above problems, a plasma including a gas inlet in a deposition chamber and a chamber structure including an exhaust port symmetrically located along a gas flow direction with respect to the gas inlet. Provided is a polymerization apparatus.

본 발명은 상기 가스주입구가 다수의 가스 분사구가 형성된 가스 유입라인으로 되어 있는 챔버구조를 포함한다.The present invention includes a chamber structure in which the gas inlet is a gas inlet line in which a plurality of gas injection holes are formed.

또한 본 발명은 상기 배기구가 2 개 이상인 챔버구조를 포함한다.The present invention also includes a chamber structure having two or more exhaust ports.

또한 본 발명은 가스유동방향이 표면처리되는 시료의 이동방향과 평행하도록 상기 가스주입구와 배기구가 대칭적으로 챔버의 시료 주입구 및 배출구 쪽에 각각 설치되어 있는 챔버구조를 포함한다.The present invention also includes a chamber structure in which the gas inlet and the exhaust port are symmetrically installed at the sample inlet and outlet sides of the chamber so that the gas flow direction is parallel to the moving direction of the sample to be surface treated.

이하, 도면을 참조하며 본 발명에 관하여 실시예를 통하여 구체적으로 설명한다.Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings.

종래의 플라즈마중합처리장치에서 가스주입구와 배기구가 비대칭적 구조로 이루어진 챔버구조를 도 2a 및 도 2b에 모식적으로 나타내었다. 도 2a를 보면 챔버 내 가스주입구(3)로부터 배기구(4)에 이르는 가스의 유동(5)이 균일하지 못한 것을 알 수 있다. 또한 도 2b는 도 2a를 다른 방향에서 나타낸 것으로서, 챔버 내의 시료가 가스유동(5)에 영향을 주어 원활하게 배출되지 못하는 모습을 봉여준다. 이와 다르게 도 3을 보면 본 발명에 의한 챔버구조로서 가스유입구(3)와 배기구(4)가 대칭적으로 형성되어 있는 것을 볼 수 있다. 가스유입구는 챔버의 정면에, 배기구는 챔버 뒷면에 각각 설치되어 있다.(도면상에는 가스유입구가 아래쪽에, 배기구는 위쪽에 도시되어 있다.)2a and 2b schematically show a chamber structure in which a gas inlet and an exhaust port have an asymmetrical structure in a conventional plasma polymerization apparatus. 2A shows that the flow 5 of gas from the gas inlet 3 to the exhaust port 4 in the chamber is not uniform. In addition, Figure 2b is shown in Figure 2a in a different direction, the sample in the chamber affects the gas flow (5) to seal the appearance that can not be smoothly discharged. 3, the gas inlet 3 and the exhaust port 4 are symmetrically formed as a chamber structure according to the present invention. The gas inlet is provided at the front of the chamber, and the exhaust port is provided at the rear of the chamber. (In the drawing, the gas inlet is shown below and the exhaust port is shown above.)

도 2a 및 도 2b에 나타난 바와 같이 배기구(4)가 한 개일 경우에는 반응가스의 유동 흐름(5)이 시료의 상하 좌우로 균일하지 못하게 된다. 이로 인하여 플라즈마처리시 균일성이 떨어지게 되고 플라즈마 반응시에 부수적으로 생기는 파우더 입자 등이 가스 유동을 따라 흐르다가 챔버 내부의 벽면에 부착되어 계속 쌓이는 경우도 발생한다. 따라서 상기의 경우 도 4a 및 도 4c에 나타난 본 발명의 실시예와 같이 반응가스의 배기구(4)를 2 이상으로 하고 출구위치를 가스유입라인(2)과 대칭되도록 적절하게 선정하면, 시료가 중합처리되면서 이동할 때 반응가스의 유동이 시료의 위치와 상관없이 균일하게 되고 반응하지 않은 가스입자가 원활하게 배출되므로 플라즈마 처리시에 균일한 중합막을 얻을 수 있으며 장시간 연속처리도 가능하게 된다. 도 4b는 가스주입구를 확대한 그림으로 유입라인(2)에 다수의 가스분사구(2a)가 형성되어 있어 챔버에 균일한 가스 공급(2b)을 가능하게 한다.As shown in FIG. 2A and FIG. 2B, when there is only one exhaust port 4, the flow flow 5 of the reaction gas becomes uneven in up, down, left, and right sides of the sample. As a result, the uniformity of the plasma process may be reduced, and powder particles, etc., incidentally generated during the plasma reaction may flow along the gas flow and may continue to accumulate on the wall inside the chamber. Therefore, in the above case, if the exhaust port 4 of the reaction gas is set to 2 or more and the outlet position is selected to be symmetrical with the gas inlet line 2, as in the embodiment of the present invention shown in FIGS. 4A and 4C, the sample is polymerized. When moving during processing, the flow of the reaction gas becomes uniform regardless of the position of the sample, and the unreacted gas particles are smoothly discharged, thereby obtaining a uniform polymerized film during the plasma treatment and allowing continuous processing for a long time. 4B is an enlarged view of the gas inlet, and a plurality of gas injection holes 2a are formed in the inlet line 2 to enable uniform gas supply 2b to the chamber.

본 발명에 의하면 증착챔버 내 가스 흐름을 원활하고 균일하게 형성시킴으로써 가스의 이용 효율을 향상시키고 균일한 품질의 중합막을 증착할 수 있으며, 특히 챔버 내부에 가스 입자가 달라붙는 것을 효과적으로 줄일 수 있게 된다.According to the present invention, by smoothly and uniformly forming a gas flow in the deposition chamber, gas utilization efficiency can be improved and a polymer film having a uniform quality can be deposited, and in particular, gas particles can be effectively stuck inside the chamber.

Claims (1)

증착챔버 내의 가스주입구와, 상기 가스 주입구에 대하여 가스 유동 방향을 따라 대칭적으로 위치한 배기구로 이루어지는 챔버구조를 포함하여 구성되는 플라즈마중합처리장치.And a chamber structure including a gas inlet in the deposition chamber and an exhaust port symmetrically located along the gas flow direction with respect to the gas inlet.
KR1019990035214A 1999-08-24 1999-08-24 Plasma polymerization system KR20010019015A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019990035214A KR20010019015A (en) 1999-08-24 1999-08-24 Plasma polymerization system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990035214A KR20010019015A (en) 1999-08-24 1999-08-24 Plasma polymerization system

Publications (1)

Publication Number Publication Date
KR20010019015A true KR20010019015A (en) 2001-03-15

Family

ID=19608490

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990035214A KR20010019015A (en) 1999-08-24 1999-08-24 Plasma polymerization system

Country Status (1)

Country Link
KR (1) KR20010019015A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101156668B1 (en) * 2010-09-28 2012-06-15 주식회사 케이엔알 A glow discharge employing gas controlment for transferring liquid sample

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101156668B1 (en) * 2010-09-28 2012-06-15 주식회사 케이엔알 A glow discharge employing gas controlment for transferring liquid sample

Similar Documents

Publication Publication Date Title
KR100320197B1 (en) An apparatus for forming polymer continuously on the surface of metal by dc plasma polymerization
US20120164353A1 (en) Plasma enhanced chemical vapor deposition apparatus
US6001432A (en) Apparatus for forming films on a substrate
JP5562723B2 (en) Film forming method, film forming apparatus, and gas barrier film manufacturing method
KR20010019015A (en) Plasma polymerization system
EP1044458B1 (en) Dual face shower head magnetron, plasma generating apparatus and method of coating a substrate
AU771642B2 (en) Plasma polymerizing apparatus having an electrode with a lot of uniform edges
KR20010086971A (en) Supplying and exhausting system in plasma polymerizing apparatus
JP3083008B2 (en) Film forming apparatus and film forming method
KR20010019014A (en) Dc plasma polymerization system
KR100390794B1 (en) A continuous plasma polymerizing apparatus
KR20010088068A (en) Plasma polymerizing apparatus having gas injection line
Yu et al. Effects of cathode and anode on deposition of trimethylsilane in glow discharge
Theirich et al. A novel remote technique for high rate plasma polymerization with radio frequency plasmas
JP3757402B2 (en) Vacuum seal device
JP2001220668A (en) Substrate treating apparatus, substrate treating method and thin film device produced by using the same
KR100386506B1 (en) Gas system for a continuous plasma polymerizing apparatus
JP2007186775A (en) Film-forming method and apparatus
JPH02282478A (en) Continuous ion plating device for long size material such as metallic strip
JPH0663103B2 (en) Plasma processing-vacuum deposition equipment
KR20010088089A (en) Method of improving hydrophile in plasma polymerization system
KR20010019022A (en) Plasma polymerization system
JP2646457B2 (en) Plasma processing-ion plating processing equipment
KR20020037997A (en) Power supplying method in an apparatus for continuous plasma polymerization
JPH04136167A (en) Continuous type sputtering device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination