KR20010018067A - A pressure control valve - Google Patents
A pressure control valve Download PDFInfo
- Publication number
- KR20010018067A KR20010018067A KR1019990033872A KR19990033872A KR20010018067A KR 20010018067 A KR20010018067 A KR 20010018067A KR 1019990033872 A KR1019990033872 A KR 1019990033872A KR 19990033872 A KR19990033872 A KR 19990033872A KR 20010018067 A KR20010018067 A KR 20010018067A
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- process chamber
- pressure
- exhaust pipe
- valve
- opening
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K17/00—Safety valves; Equalising valves, e.g. pressure relief valves
- F16K17/02—Safety valves; Equalising valves, e.g. pressure relief valves opening on surplus pressure on one side; closing on insufficient pressure on one side
- F16K17/04—Safety valves; Equalising valves, e.g. pressure relief valves opening on surplus pressure on one side; closing on insufficient pressure on one side spring-loaded
- F16K17/06—Safety valves; Equalising valves, e.g. pressure relief valves opening on surplus pressure on one side; closing on insufficient pressure on one side spring-loaded with special arrangements for adjusting the opening pressure
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K17/00—Safety valves; Equalising valves, e.g. pressure relief valves
- F16K17/02—Safety valves; Equalising valves, e.g. pressure relief valves opening on surplus pressure on one side; closing on insufficient pressure on one side
- F16K17/04—Safety valves; Equalising valves, e.g. pressure relief valves opening on surplus pressure on one side; closing on insufficient pressure on one side spring-loaded
- F16K17/048—Safety valves; Equalising valves, e.g. pressure relief valves opening on surplus pressure on one side; closing on insufficient pressure on one side spring-loaded combined with other safety valves, or with pressure control devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/04—Actuating devices; Operating means; Releasing devices electric; magnetic using a motor
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/44—Mechanical actuating means
- F16K31/53—Mechanical actuating means with toothed gearing
- F16K31/54—Mechanical actuating means with toothed gearing with pinion and rack
Abstract
Description
본 발명은 공정쳄버 내의 압력을 조절하기 위한 압력 제어용 밸브에 관한 것으로써, 특히 저압화학기상 증착장치에서 공정쳄버 내부 압력의 불안정을 최소화시켜 웨이퍼 상에 안정된 증착 공정을 진행시키기 위한 공정쳄버의 압력 제어밸브이다.The present invention relates to a pressure control valve for adjusting the pressure in the process chamber, in particular to the pressure control of the process chamber for proceeding a stable deposition process on the wafer by minimizing the instability of the pressure inside the process chamber in a low-pressure chemical vapor deposition apparatus Valve.
일반적으로 반응가스와 웨이퍼 표면을 서로 화학반응시켜 폴리실리콘막, 산화실리콘막, 질화실리콘막 등을 웨이퍼 표면에 증착시키기 위해 화학기상증착(Chemical Vapor Deposition : 이하 CVD)이 이용된다.Generally, chemical vapor deposition (CVD) is used to chemically react a reaction gas and a wafer surface to deposit a polysilicon film, a silicon oxide film, and a silicon nitride film on the wafer surface.
이러한 화학기상증착(CVD)은 생성압력, 여기에너지, 장치의 방식 등에 따라 여러가지 종류로 구분되는데 그 중에서 반응쳄버 내의 생성압력 차이에 따라 저압화학기상증착(Low Pressure CVD : 이하 LPCVD) 또는 상압화학 기상증착(Atmospheric Pressure CVD : 이하 APCVD)으로 분류한다.Chemical Vapor Deposition (CVD) is classified into various types according to generation pressure, excitation energy, device type, etc. Among them, Low Pressure Chemical Vapor Deposition (LPCVD) or atmospheric pressure chemical vapor phase depending on the generation pressure difference in the reaction chamber. It is classified as deposition (Atmospheric Pressure CVD: APCVD).
저압화학 기상증착(LPCVD)은 반응쳄버의 압력을 0.1 ~ 10 torr의 압력 하에서 유지시킨 후 반응가스와 웨이퍼를 화학반응 일으켜 웨이퍼 표면에 증착을 하고, 상압화학 기상증착(APCVD)은 반응쳄버의 압력을 상압하에서 유지시킨 후 반응가스와 웨이퍼를 화학반응 일으켜 증착하는 것이다.Low pressure chemical vapor deposition (LPCVD) maintains the pressure of the reaction chamber under a pressure of 0.1 to 10 torr, then chemically reacts the reaction gas and the wafer to deposit it on the wafer surface. Atmospheric pressure chemical vapor deposition (APCVD) is the pressure of the reaction chamber. After maintaining at atmospheric pressure, the reaction gas and the wafer are chemically deposited to deposit them.
제 1 도에는 종래의 저압 화학기상증착(LPCVD)장치에 대한 간략한 구성도로써, 이를 참조하면, 종래의 저압 화학기상증착 장치는 다수개의 웨이퍼가 장입되는 공정쳄버(10)가 있다.FIG. 1 is a schematic diagram of a conventional low pressure chemical vapor deposition (LPCVD) apparatus. Referring to this, the conventional low pressure chemical vapor deposition apparatus includes a process chamber 10 in which a plurality of wafers are loaded.
이 공정쳄버(10)에는 웨이퍼 상에 증착될 공정가스가 공급되는 공정가스 공급관(20)이 플랜지부(11)의 일측에 연결되어 있으며, 플랜지부(11)의 타측에는 공정이 완료된 공정가스를 외부로 배기시키거나 또는 대기압 상태의 공정쳄버(10)내부를 저압으로 형성시키기 위해 미도시된 진공펌프와 연결되는 배기관들(30),(31)이 연결되어 있다.In the process chamber 10, a process gas supply pipe 20 through which a process gas to be deposited on a wafer is supplied is connected to one side of the flange portion 11, and the other side of the flange portion 11 includes a process gas having completed the process. Exhaust pipes 30 and 31 are connected to a vacuum pump not shown to exhaust to the outside or to form the inside of the process chamber 10 at atmospheric pressure at low pressure.
이 배기관들(30),(31)에는 배기관 내의 유로를 개폐시키기 위한 메인밸브(40) 및 서브 밸브(50)가 각각 형성되어 있다.The exhaust pipes 30 and 31 are each provided with a main valve 40 and a sub valve 50 for opening and closing the flow path in the exhaust pipe.
메인 밸브(40)는 제 2 도에 도시된 바와 같이, 공정쳄버 쪽 배기관(30-1)과 진공펌프 쪽 배기관(30-2)이 각각 연결된 밸브 몸체(41)와, 밸브 몸체 내부에 배기 펌프쪽 배기관(30-2)을 개폐시키는 벨로우즈(Bellows)관(44)과, 벨로우즈관을 접거나 펼쳐지도록 밸브 몸체에 연결 형성되어 에어를 공급하는 에어 인입관(42) 및 인출관(43)으로 이루어진다.As shown in FIG. 2, the main valve 40 includes a valve body 41 to which a process chamber side exhaust pipe 30-1 and a vacuum pump side exhaust pipe 30-2 are respectively connected, and an exhaust pump inside the valve body. A bellows pipe 44 for opening and closing the side exhaust pipe 30-2, and an air inlet pipe 42 and a lead pipe 43 connected to the valve body so as to fold or unfold the bellows pipe to supply air. Is done.
그리고, 배기관(30-1,30-2)에 연결된 배기관(31-1,31-2)에 설치된 서브 밸브(50)도 메인 밸브(40)와 동일한 구조를 갖는다.In addition, the sub valve 50 provided in the exhaust pipes 31-1 and 31-2 connected to the exhaust pipes 30-1 and 30-2 also has the same structure as the main valve 40.
이러한 구성으로 이루어진 종래의 저압화학기상 증착장치는 대기압 상태인 공정쳄버(10) 내부로 웨이퍼가 장입되면 공정가스 공급관(20)에서 공정가스가 플랜지부(11)로 공급된다.In the conventional low pressure chemical vapor deposition apparatus having such a configuration, when a wafer is charged into the process chamber 10 in an atmospheric pressure state, the process gas is supplied from the process gas supply pipe 20 to the flange portion 11.
이 상태에서 대기압 상태인 공정쳄버(10) 내부를 저압 상태로 형성하기 위해 먼저 서브 밸브(50)를 열어 미도시된 진공펌프의 펌핑력에 의해 공정 쳄버내부를 펌핑한다.In this state, in order to form the inside of the process chamber 10 in the atmospheric pressure state at a low pressure state, first, the sub valve 50 is opened to pump the inside of the process chamber by the pumping force of the vacuum pump (not shown).
따라서, 공정쳄버(10)내부는 서서히 저압상태로 변화되고, 공정쳄버 내부가 일정 압력이하로 되면 메인밸브(40)를 열어 공정쳄버 내부를 '0' 파스칼(Pa)까지 펌핑을 한다.Therefore, the inside of the process chamber 10 is gradually changed to a low pressure state, and when the inside of the process chamber is below a certain pressure, the main valve 40 is opened to pump the inside of the process chamber to '0' Pascals (Pa).
그리고, 공정쳄버(10) 내부의 리크 이상 유무를 측정하여 진공의 리크가 발생되지 않으면 공정챔버로 공정가스를 공급하고 웨이퍼와 공정가스를 화학반응시켜 웨이퍼 상에 증착 공정을 수행하게 된다.If the vacuum leak does not occur by measuring the leakage abnormality in the process chamber 10, the process gas is supplied to the process chamber, and the wafer and the process gas are chemically reacted to perform the deposition process on the wafer.
그러나, 이러한 종래의 저압화학기상 증착장치는 공정쳄버를 진공펌핑하기 위해 배기관에 형성된 메인 밸브 및 서브 밸브를 개폐시키는 과정에서 순간적인 펌핑압력 변화에 의해 웨이퍼 상에 파티클(particle)이 부착된다.However, in the conventional low pressure chemical vapor deposition apparatus, particles are attached to the wafer by a momentary change in the pumping pressure in the process of opening and closing the main valve and the sub valve formed in the exhaust pipe to vacuum the process chamber.
이에 대해 좀더 자세히 설명하면, 메인 밸브와 연결되는 배기관과 서브 밸브와 연결되는 배기관의 관굵기(유로 단면적)가 서로 달라 배기관 내를 통과하는 가스의 압력 차이가 발생된다.In more detail, the pipe thickness of the exhaust pipe connected to the main valve and the exhaust pipe connected to the sub valve are different from each other, and a pressure difference of the gas passing through the exhaust pipe is generated.
또한, 배기관의 메인 밸브 및 서브 밸브는 모두 통상적인 개폐밸브로써, 밸브의 개도가 에어 공급에 의해 벨로우즈(Bellows)관이 순간적으로 접철되면서 배기관을 개폐시키게 된다.In addition, both the main valve and the sub-valve of the exhaust pipe are conventional on-off valves, and the opening and closing of the valve opens and closes the exhaust pipe while the bellows pipe is instantaneously folded by the air supply.
이러한 배기관의 개폐는 밸브의 개도가 100% 열림 또는 100% 닫힘 상태로만 변환되므로 미세한 배기압력 조절이 불가능하다.Opening and closing of the exhaust pipe is not possible to control the fine exhaust pressure because the opening degree of the valve is converted only to 100% open or 100% closed state.
따라서, 밸브의 개폐시 급격한 열림 또는 닫힘에 의해 배기관 내에서 순간적인 펌핑 압력변화가 발생되어 배기관내의 파티클이 공정쳄버 내부로 역류하거나 공정쳄버 내부의 파티클이 배기관을 통해 배출되지 못하여 결국에는 웨이퍼의 오염을 유발시키게 된다.Therefore, when the valve is opened or closed, a sudden change in pumping pressure occurs in the exhaust pipe, causing particles in the exhaust pipe to flow back into the process chamber, or particles inside the process chamber cannot be discharged through the exhaust pipe. It will cause contamination.
이에 따라 본 발명은 공정쳄버 내부를 저압상태로 형성시킬 때 불안정한 압력 변화를 방지하며, 밸브의 개도를 서서히 변화시켜 챔버 내의 압력 변화를 시간에 따라 적절히 조절하여 파티클 발생에 의한 웨이퍼 오염을 억제시키는 공정챔버의 압력 조절밸브를 제공하는데 그 목적이 있다.Accordingly, the present invention prevents unstable pressure change when forming the inside of the process chamber at a low pressure state, and gradually changes the opening degree of the valve to appropriately adjust the pressure change in the chamber according to time to suppress wafer contamination due to particle generation. The purpose is to provide a pressure regulating valve of the chamber.
따라서, 본 발명은 상기 목적을 달성하고자, 화학기상증착 장치에서 공정쳄버 내의 압력 변화를 조절하기 위한 공정쳄버의 압력 조절밸브에 있어서, 공정쳄버에 단일 유로를 갖도록 연결 설치된 배기관의 소정부위에 설치되는 밸브 몸체와, 밸브 몸체의 내부로 배기관의 단일 유로를 가로질러 이동되도록 설치되어 배기관의 유로 면적을 변화시키는 개폐 조절판과, 개폐 조절판을 이동시키는 이동수단을 구비하여, 이동수단이 개폐 조절판을 이동시켜 배기관의 유로 면적을 변화시키도록 한다.Therefore, in order to achieve the above object, the present invention provides a pressure control valve of a process chamber for controlling a pressure change in a process chamber in a chemical vapor deposition apparatus, the process chamber being provided at a predetermined portion of an exhaust pipe connected to have a single flow path in the process chamber. And a valve body, an opening and closing control plate installed to move across the single flow path of the exhaust pipe into the valve body to change the flow path area of the exhaust pipe, and a moving means for moving the opening and closing control plate. Change the flow path area of the exhaust pipe.
여기서, 이동수단은 개폐 조절판의 끝단에 형성된 랙기어와, 랙기어와 상호 맞물리는 피니언 기어와, 피니언 기어를 회전시키는 구동모터로 하면 된다.Here, the moving means may be a rack gear formed at the end of the opening and closing adjustment plate, a pinion gear meshing with the rack gear, and a drive motor for rotating the pinion gear.
제 1 도는 종래 저압 화학기상증착 장치에 대한 간략한 구성도.1 is a simplified schematic diagram of a conventional low pressure chemical vapor deposition apparatus.
제 2 도는 종래 저압 화학기상증착 장치에서 메인 밸브를 설명하기 위한 도면.2 is a view for explaining the main valve in the conventional low pressure chemical vapor deposition apparatus.
제 3 도는 본 발명인 공정쳄버의 압력 제어밸브가 장착된 저압 화학기상증착 장치에 대한 간략한 구성도.3 is a simplified schematic diagram of a low pressure chemical vapor deposition apparatus equipped with a pressure control valve of a process chamber of the present invention.
제 4 도는 본 발명인 공정쳄버의 압력 제어밸브를 설명하기 위한 도면.4 is a view for explaining a pressure control valve of the process chamber of the present invention.
제 5 도는 본 발명인 공정쳄버의 압력 제어밸브의 개폐에 따른 공정챔버 내의 압력 변화를 설명하기 위한 도면.5 is a view for explaining the pressure change in the process chamber according to the opening and closing of the pressure control valve of the process chamber of the present invention.
■ 도면의 주요부분에 대한 간략한 부호설명 ■■ Brief description of the main parts of the drawing ■
10 : 공정쳄버 11 : 플랜지부(flanger)10: process chamber 11: flanger
20 : 가스 공급관 30,31,100 : 가스 배기관20: gas supply pipe 30,31,100: gas exhaust pipe
40 : 메인 밸브 41 : 밸브 몸체40: main valve 41: valve body
42 : 에어 인입관 43 : 에어 인출관42: air inlet pipe 43: air outlet pipe
44 : 벨로우즈관 50 : 서브 밸브44: bellows pipe 50: sub-valve
200 : 압력 조절밸브 201 : 조절밸브 몸체200: pressure control valve 201: control valve body
202 : 개폐 조절판 203 : 조절판 구동모터202: opening and closing control panel 203: control panel drive motor
204 : 피니언 기어 205 : 랙기어204: pinion gear 205: rack gear
이하, 첨부된 도면을 참조하여 본 발명인 공정챔버의 압력 조절밸브에 대한 바람직한 일실시예를 상세히 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the pressure control valve of the present invention process chamber in detail.
제 3 도는 본 발명인 공정쳄버의 압력 조절밸브가 설치된 저압화학기상증착 장치에 대한 간략한 구성도이며, 제 4 도는 본 발명인 공정쳄버의 압력 조절밸브를 설명하기 위한 도면이다.FIG. 3 is a schematic diagram of a low pressure chemical vapor deposition apparatus in which a pressure control valve of a process chamber of the present invention is installed, and FIG. 4 is a view for explaining a pressure control valve of a process chamber of the present invention.
이를 참조하면, 본 발명인 공정쳄버의 압력 조절밸브는 다수개의 웨이퍼가 장입되어 위치되며, 플랜지부(11)를 거쳐 웨이퍼 상에 증착될 공정가스를 공급하는 공정가스 공급관(20)이 연결 형성된 공정쳄버(10)의 배기관(100)에 설치된다.Referring to this, in the pressure control valve of the process chamber of the present invention, a plurality of wafers are loaded and positioned, and a process chamber in which a process gas supply pipe 20 for supplying process gas to be deposited on the wafer is connected through the flange portion 11. It is installed in the exhaust pipe 100 of (10).
이 배기관(100)은 종래의 배기관과 달리 단일 유로를 가지며, 미도시된 진공펌프에 연결되어 본 발명인 압력 조절밸브(200)의 개폐에 따라 공정쳄버(10)내부를 펌핑하여 진공을 형성시키거나 공정이 완료된 공정가스를 외부로 배기시키는 역할을 하게 된다.Unlike the conventional exhaust pipe, the exhaust pipe 100 has a single flow path and is connected to a vacuum pump (not shown) to form a vacuum by pumping the inside of the process chamber 10 in accordance with the opening and closing of the pressure control valve 200 according to the present invention. It serves to exhaust the process gas is completed.
본 발명인 압력 조절용 밸브를 좀더 자세히 설명하면, 제 4 도에 도시된 바와 같이 단일유로를 갖는 공정쳄버 쪽 배기관(100-1)과 진공펌프(미도시) 쪽 배기관(100-2)이 각각 연결되어 단일유로가 연속적으로 형성되며, 일측면이 개구된 밸브 몸체(201)와, 밸브 몸체의 개구된 일측면으로 유로를 가로 질러 이동되게 설치된 개폐 조절판(202)과, 개폐 조절판의 끝단에 설치되어 개폐 조절판의 조절밸브 몸체 내부로 이동시켜 유로의 단면적 크기를 변화시키는 이동수단(203 내지 205)을 구비한다.The pressure regulating valve of the present invention will be described in more detail. As shown in FIG. 4, the process chamber side exhaust pipe 100-1 and the vacuum pump side exhaust pipe 100-2 having a single flow path are connected to each other. A single flow path is continuously formed, the valve body 201 having one side opened, the opening / closing control plate 202 installed to move across the flow path to the open one side of the valve body, and installed at the end of the opening / closing control plate Moving means (203 to 205) for moving into the control valve body of the control plate to change the cross-sectional area size of the flow path.
여기서, 이동수단으로는 구동모터(203)를 사용하면 되는데, 구동모터의 구동에 의해 정확한 개폐 조절판(202)의 이동이 제어되도록 구동모터(203)의 구동축에 피니언 기어(Pinion Gear)(204)를 설치하고, 이 피니언 기어(204)와 상호 맞물리는 랙기어(Rack Gear)(205)를 개폐 조절판(202)의 끝단에 설치하여 랙-피니언 기어 운동을 하도록 하면 된다.Herein, the driving motor 203 may be used as the moving means, and the pinion gear 204 is connected to the drive shaft of the driving motor 203 so that the precise movement of the control panel 202 can be controlled by the driving of the driving motor. And a rack gear 205 interlocking with the pinion gear 204 at the end of the opening / closing adjustment plate 202 to perform the rack-pinion gear movement.
따라서, 구동모터(203)가 회전하면 개폐 조절판(202)이 랙-피니언 기어 운동에 의해 개구된 밸브 몸체의 내부로 이동되면서 유로의 단면적 크기를 원하는 크기만큼 변화시키도록 한다.Accordingly, when the driving motor 203 rotates, the opening / closing control plate 202 is moved into the valve body opened by the rack-pinion gear movement to change the size of the cross-sectional area of the flow path by a desired size.
이러한 구성으로 이루어지는 본 발명인 공정쳄버의 압력 조절밸브에 의한 공정쳄버 내부의 압력 변화를 제 5 도를 참조하여 설명한다.The pressure change inside the process chamber by the pressure control valve of the process chamber of the present invention having such a configuration will be described with reference to FIG.
여기서, 〈X〉 축은 진공펌핑 시간을 나타내며, 〈Y〉축은 공정챔버 내의 압력을 나타낸 것으로 직선의 기울기는 시간에 따른 공정쳄버 내부의 압력 변화를 나타내고 있다.Here, the <X> axis represents the vacuum pumping time, and the <Y> axis represents the pressure in the process chamber, and the slope of the straight line represents the pressure change inside the process chamber with time.
이를 토대로 하면 본 발명인 공정쳄버의 압력 조절밸브에 의해 시간에 따라 대기압상태인 공정챔버 내부의 압력이 서서히 저압상태로 선형적으로 변화됨을 볼 수 있다.Based on this, it can be seen that the pressure inside the process chamber in the atmospheric pressure state gradually changes linearly to the low pressure state with time by the pressure control valve of the process chamber of the present invention.
이는 본 발명인 공정쳄버의 압력 조절밸브는 공정쳄버에 연결된 배기관을 단일 유로를 갖도록 설치되므로 배기관 유로의 단면적 크기 변화에 따른 압력 변화가 없기 때문이다.This is because the pressure control valve of the process chamber of the present invention is installed so that the exhaust pipe connected to the process chamber has a single flow path, so there is no pressure change due to the change in the cross-sectional area of the exhaust pipe flow path.
그리고, 대기압 상태인 공정쳄버(10)의 압력을 미도시된 진공펌프에 의해 펌핑하여 저압상태로 변화시키고자 할 때 압력 조절밸브(200)의 열림은 구동모터(203)를 회전시켜 랙-피니언 기어운동을 통해 유로를 닫고 있는 개폐 조절판(202)을 밸브 몸체(201) 외부 방향으로 이동시켜 서서히 유로 단면적 크기를 증가시켜 급격한 압력 변화를 방지하게된다.In addition, when the pressure of the process chamber 10 in the atmospheric pressure is pumped by a vacuum pump (not shown) to change to a low pressure state, the opening of the pressure regulating valve 200 rotates the drive motor 203 to rack-pinion. The opening and closing control plate 202 closing the flow passage through the gear movement is moved to the outside of the valve body 201 to gradually increase the cross-sectional area of the flow passage to prevent a sudden pressure change.
따라서, 밸브의 개도에 따른 급격한 펌핑 압력 변화가 방지되어 파티클 발생이 억제된다.Therefore, a sudden pumping pressure change according to the opening degree of the valve is prevented, and particle generation is suppressed.
또한, 반대로 밸브의 닫힘은 열림의 반대로 구동모터를 역방향으로 회전시켜 개폐 조절판을 밸브 몸체 내부 방향으로 이동시켜 서서히 유로 단면적 크기를 감소시켜 급격한 압력 변화가 방지된다.In addition, the closing of the valve, on the contrary, opens and rotates the driving motor in the reverse direction to move the opening / closing control plate in the direction of the valve body to gradually reduce the flow passage cross-sectional size, thereby preventing a sudden pressure change.
그리고, 본 발명인 공정쳄버의 압력 조절밸브는 개폐 조절판의 랙-피니언 기어운동에 따라 유로의 단면적 크기를 원하는 크기만큼 조절할 수 있어 공정쳄버 내의 압력조절이 용이하게 된다.In addition, the pressure control valve of the process chamber of the present invention can adjust the size of the cross-sectional area of the flow path by a desired size according to the rack-pinion gear movement of the opening and closing control plate to facilitate the pressure control in the process chamber.
상기에서 상술한 바와 같이, 본 발명인 공정쳄버의 압력 조절밸브는 랙-피니언 기어운동을 통해 개폐 조절판이 밸브의 개폐를 서서히 진행시켜 대기압 상태의 공정쳄버 내 압력을 저압으로 진공 펌핑하는 과정에서 공정쳄버 내부의 압력을 선형적으로 변화시키게 된다.As described above, the pressure control valve of the process chamber of the present invention is a process chamber in the process of vacuum-pumping the pressure in the process chamber in the atmospheric pressure state to a low pressure by the opening and closing control plate to gradually open and close the valve through the rack-pinion gear movement The internal pressure changes linearly.
따라서, 공정쳄버 내부의 압력이 급격히 변화되는 것이 방지됨으로써 파티클 발생이 억제되어 공정쳄버 내에 장입된 웨이퍼가 파티클에 의해 오염되는 것을 방지하게 된다.Therefore, the pressure inside the process chamber is prevented from being rapidly changed, thereby preventing the generation of particles and preventing the wafer charged into the process chamber from being contaminated by the particles.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990033872A KR20010018067A (en) | 1999-08-17 | 1999-08-17 | A pressure control valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990033872A KR20010018067A (en) | 1999-08-17 | 1999-08-17 | A pressure control valve |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010018067A true KR20010018067A (en) | 2001-03-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990033872A KR20010018067A (en) | 1999-08-17 | 1999-08-17 | A pressure control valve |
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| KR (1) | KR20010018067A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109027278A (en) * | 2018-09-10 | 2018-12-18 | 铜陵爱阀科技有限公司 | A kind of pressure self-control type gate valve |
-
1999
- 1999-08-17 KR KR1019990033872A patent/KR20010018067A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109027278A (en) * | 2018-09-10 | 2018-12-18 | 铜陵爱阀科技有限公司 | A kind of pressure self-control type gate valve |
| CN109027278B (en) * | 2018-09-10 | 2019-11-22 | 铜陵爱阀科技有限公司 | A kind of pressure self-control type gate valve |
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