KR20010002826A - Circuit for discriminating arm short - Google Patents
Circuit for discriminating arm short Download PDFInfo
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- KR20010002826A KR20010002826A KR1019990022844A KR19990022844A KR20010002826A KR 20010002826 A KR20010002826 A KR 20010002826A KR 1019990022844 A KR1019990022844 A KR 1019990022844A KR 19990022844 A KR19990022844 A KR 19990022844A KR 20010002826 A KR20010002826 A KR 20010002826A
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- half bridge
- bridge circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
Abstract
Description
본 발명은 전력제어회로에서 전력변환을 위해 구비되는 하프브리지(half bridge)회로에 관한 것으로, 보다 상세하게는 하프브리지회로의 두 스위칭소자가 동시에 턴온되는 암 쇼트상태를 미리 검출할 수 있는 암 쇼트 판별 회로에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a half bridge circuit provided for power conversion in a power control circuit. More specifically, an arm short circuit capable of detecting an arm short state in which two switching elements of a half bridge circuit are simultaneously turned on is provided. It relates to a discrimination circuit.
하프브리지회로는 스위칭제어신호에 따라서 온/오프스위칭되는 두개의 스위칭소자를 전원라인에 직렬로 연결한 것으로, 인버터나 직류-직류변환기등과 같은 전원변환장치에 이용된다.The half bridge circuit connects two switching elements on / off switched in series with a switching control signal in series with a power supply line, and is used in a power conversion device such as an inverter or a DC-DC converter.
상기 하프브리지회로에 구비되는 두 스위칭소자는 동시에 턴온되는 경우가 없도록 스위칭제어되는데, 외부 제어기의 에러나 잡음등이 끼어듬에 의해 두 스위칭소자가 동시에 턴온되는 상태가 발생할 수 있다. 이를 암 쇼트(ARM SHORT)라 한다.The two switching elements included in the half bridge circuit are controlled to be turned on at the same time, and a state in which the two switching elements are turned on at the same time may be caused by an error or noise of an external controller. This is called an ARM SHORT.
두 스위칭소자가 동시에 온될 경우, 해당 전원변환장치가 정상적으로 동작하지 못하고, 상기 스위칭소자에 과전압이 걸려 소손되는 등의 문제가 발생한다.When the two switching devices are turned on at the same time, the power converter does not operate normally, and there is a problem such that an overvoltage is applied to the switching devices.
따라서, 이러한 두 스위칭소자가 동시에 온되는 암 쇼트상태를 검출하여 두 스위칭소자가 동시에 온되지 않도록 차단시켜야 하는데, 이를 위해서 종래에는 스위칭소자의 콜렉터전류를 검출하여 그로부터 두 스위칭소자가 모두 온상태인지를 판단하였다.Therefore, it is necessary to detect a dark short state in which these two switching elements are turned on at the same time so that the two switching elements are not turned on at the same time. Judging
그런데, 이와 같은 종래 방식은 고용량일 경우, 상기 스위칭소자의 콜렉터전류를 검출하는 검출소자의 크기가 커지고, 이에 따라 비용이 증가되는 문제점이 있을 뿐만아니라 두 스위칭소자가 온된 상태를 검출하여 사후조치를 취하는 것이므로 이런 경우가 자주 발생될 때 소자의 수명이 줄어드는 문제점이 있다.However, such a conventional method has a problem that the size of the detection device for detecting the collector current of the switching device is increased when the capacity is high, and thus the cost is increased. The problem is that the lifetime of the device is reduced when this happens frequently.
본 발명은 상술한 종래의 문제점을 해결하기 위하여 안출된 것으로서, 그 목적은 하프브리지회로의 두 스위칭소자에 인가되는 제어신호로부터 암 쇼트상태를 판별하여 사전에 스위칭소자를 차단시킬 수 있는 암 쇼트 판별 회로를 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object thereof is to determine an arm short state from a control signal applied to two switching elements of a half bridge circuit so as to discriminate an arm short in advance. To provide a circuit.
도 1은 본 발명에 의한 암 쇼트 판별 회로가 적용된 하프브리지(half bridge)회로를 도시한 회로구성도이다.1 is a circuit configuration diagram showing a half bridge circuit to which the arm short discrimination circuit according to the present invention is applied.
도 2는 도 1에 보인 하프브리지 회로의 동작파형도이다.FIG. 2 is an operation waveform diagram of the half bridge circuit shown in FIG. 1.
*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
10 : 상측 게이트 버퍼10: upper gate buffer
20 : 하측 게이트 버퍼20: lower gate buffer
30 : 하프브리지(half bridge) 회로30: half bridge circuit
40 : 암 쇼트 판별 회로40: arm short discrimination circuit
상술한 본 발명의 목적을 달성하기 위한 구성수단으로서, 본 발명은 제1,2 전력스위칭소자가 직렬로 연결된 하프 브리지회로의 쇼트상태판별회로에 있어서,As a construction means for achieving the above object of the present invention, the present invention provides a short state discrimination circuit of a half bridge circuit in which the first and second power switching elements are connected in series.
제1,2전력스위칭소자의 게이트단에 각각 제1,2포토커플러의 발광다이오드를 직렬로 연결하고, 상기 제1,2포토커플러의 수광트랜지스터의 콜렉터를 보조전원에 연결하며, 이미터는 일단이 접지된 전류검출저항(Rs)의 타단에 동시에 연결하고, 상기 제1,2포토커플러와 전류검출저항의 접점은 비교기의 비반전입력단에 연결하고, 상기 비교기의 반전입력단을 보조전원과 접지에 직렬연결된 두 저항의 접점에 연결하여, 상기 비교기의 출력을 쇼트판별신호로 출력하도록 구성함을 특징으로 한다.The light emitting diodes of the first and second photocouplers are connected in series to the gate terminals of the first and second power switching elements, respectively, and the collectors of the light receiving transistors of the first and second photocouplers are connected to an auxiliary power source. The first and second photocouplers are connected to the non-inverting input terminal of the comparator and the inverting input terminal of the comparator is connected in series to the auxiliary power supply and ground. It is characterized in that it is connected to the contact of the two resistors connected, and outputs the output of the comparator as a short discrimination signal.
이하, 첨부한 도면을 참조하여 본 발명의 구성 및 작용을 상세하게 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the configuration and operation of the present invention.
도 1은 본 발명에 따른 암 쇼트 판별회로가 적용된 하프브리지회로를 도시한 회로구성도로서, 보조전원(VDD1)에 NPN트랜지스터(Q3)의 콜렉터를 연결하고 상기 NPN트랜지스터(Q3)의 에미터에 콜렉터접지된 PNP트랜지스터(Q4)의 에미터를 연결하고 상기 두 트랜지스터(Q3,Q4)의 베이스에 상위게이트제어신호(Hg)가 인가되도록 구성된 상위게이트버퍼(10)와, 보조전원(VDD2)에 NPN트랜지스터(Q5)의 콜렉터를 연결하고 상기 NPN트랜지스터(Q5)의 에미터에 콜렉터접지된 PNP트랜지스터(Q6)의 에미터를 연결하고 상기 두 트랜지스터(Q5,Q6)의 베이스에 하위게이트제어신호(Lg)가 인가되도록 구성된 하위게이트버퍼(20)와, 전원라인(P-N)에 직렬로 제1,2스위칭소자(Q1,Q2)를 연결하고 제1게이트저항(Rg1)을 통해 상기 제1스위칭소자(Q1)의 게이트를 상기 상위게이트버퍼(10)에 구비된 두 트랜지스터(Q3,Q4)의 이미터접점에 연결하고 제2게이트저항(Rg2)를 통해 상기 제2스위칭소자(Q2)의 게이트를 상기 하위게이트버퍼(20)에 구비된 두 트랜지스터(Q5,Q6)의 이미터접점에 연결하여 구성된 하프브리지회로(30)와, 상기 하프브리지회로(30)의 제1게이트저항(Rg1)과 제1스위칭소자(Q1)사이 및 제2게이트저항(Rg2)와 제2스위칭소자(Q2)사이에 각각 직렬로 제1,2포토커플러(op1, op2)의 발광다이오드를 연결하고 상기 제1,2포토커플러(op1, op2)의 발광다이오드에 병렬로 다이오드(D1,D2)를 역방향으로 연결하면서 상기 제1,2포토커플러(op1, op2)의 수광트랜지스터는 동시에 그 콜렉터를 보조전원단(Vcc)에 연결하고 이미터를 전류검출용 저항(Rs)을 통해 접지시키고 상기 저항(Rs)에 병렬로 콘덴서(C1)을 연결하며, 상기 저항(Rs)에 걸린 전압이 비교기(u1)의 비반전입력단에 인가되도록 연결하고, 보조전압(Vcc)의 저항(R3,R4)로 분압한 소정 기준전압이 상기 비교기(u1)의 반전입력단에 인가되도록 연결하여 상기 비교기(u1)의 출력신호를 이상검출신호로 출력하는 쇼트판별회로(40)를 구비한다.1 is a circuit diagram illustrating a half-bridge circuit to which an arm short discrimination circuit according to the present invention is applied. The collector of the NPN transistor Q3 is connected to the auxiliary power supply V DD1 and the emitter of the NPN transistor Q3 is connected. An upper gate buffer 10 configured to connect an emitter of a PNP transistor Q4 connected to a collector ground, and to apply an upper gate control signal Hg to the bases of the two transistors Q3 and Q4, and an auxiliary power supply V DD2. ) Connects the collector of the NPN transistor Q5, the emitter of the PNP transistor Q6 that is collector-grounded to the emitter of the NPN transistor Q5, and the lower gate control to the base of the two transistors Q5 and Q6. The first and second switching elements Q1 and Q2 are connected in series with the lower gate buffer 20 configured to apply the signal Lg and the power line PN, and the first gate resistor Rg1 is used to connect the first and second switching elements Q1 and Q2. Two gates of the switching element Q1 are provided in the upper gate buffer 10. Two transistors Q5 and Q6 connected to the emitter contacts of the transistors Q3 and Q4 and the gate of the second switching element Q2 is provided in the lower gate buffer 20 through a second gate resistor Rg2. A half bridge circuit 30 connected to an emitter contact of the second bridge, between the first gate resistor Rg1 and the first switching element Q1 and between the second gate resistor Rg2 and the first gate resistor Rg2 of the half bridge circuit 30. The light emitting diodes of the first and second photocouplers op1 and op2 are connected in series between the two switching elements Q2, respectively, and the diodes D1 and D1 are connected in parallel to the light emitting diodes of the first and second photocouplers op1 and op2. While connecting D2) in the reverse direction, the light receiving transistors of the first and second photocouplers op1 and op2 simultaneously connect the collector to the auxiliary power supply terminal Vcc and ground the emitter through the current detecting resistor Rs. A capacitor C1 is connected in parallel to the resistor Rs, and a voltage applied to the resistor Rs is connected to a non-inverting input terminal of the comparator u1. The reference signal divided by the resistors R3 and R4 of the auxiliary voltage Vcc is applied to the inverting input terminal of the comparator u1 to convert the output signal of the comparator u1 into an abnormal detection signal. The short discrimination circuit 40 which outputs is provided.
상술한 바와 같이 구성된 회로의 동작을 설명하면 다음과 같다.Referring to the operation of the circuit configured as described above is as follows.
먼저, 브리지회로(30)의 동작을 설명하면, 외부 제어기(도시생략)로부터 인가되는 상위게이트제어신호(Hg)가 하이레벨일때, NPN트랜지스터(Q3)가 턴온되고(이때, PNP트랜지스터(Q4)는 턴오프된다.), 이에 상기 제1스위칭소자(Q1)의 게이트가 제1게이트저항(Rg1)을 통해 보조전원(VDD1)에 연결된다. 따라서, 상기 제1스위칭소자(Q1)의 게이트단에 소정 전류가 흘러, 제1스위칭소자(Q1)가 턴온된다. 반대로, 상기 상위게이트제어신호(Hg)가 로우레벨일 때는 PNP트랜지스터(Q4)가 턴온되어, 상기 제1스위칭소자(Q1)의 게이트가 제1게이트저항(Rg1)을 통해 접지(G1)에 연결되고, 이에, 제1스위칭소자(Q1)는 턴오프된다.First, the operation of the bridge circuit 30 will be described. When the upper gate control signal Hg applied from the external controller (not shown) is at the high level, the NPN transistor Q3 is turned on (at this time, the PNP transistor Q4). Is turned off.), So that the gate of the first switching element Q1 is connected to the auxiliary power source V DD1 through the first gate resistor Rg1. Therefore, a predetermined current flows through the gate terminal of the first switching device Q1, and the first switching device Q1 is turned on. On the contrary, when the upper gate control signal Hg is at the low level, the PNP transistor Q4 is turned on so that the gate of the first switching element Q1 is connected to the ground G1 through the first gate resistor Rg1. As a result, the first switching element Q1 is turned off.
하위게이트버퍼(20)도 상기 상위게이트버퍼(10)와 마찬가지로 동작하여 하위게이트제어신호(Lg)에 따라서 제2스위칭소자(Q2)를 온/오프시킨다.The lower gate buffer 20 also operates in the same manner as the upper gate buffer 10 to turn on / off the second switching element Q2 according to the lower gate control signal Lg.
상기에서, 정상적인 동작상태일 때 상기 상위게이트제어신호(Hg)와 하위게이트제어신호(Lg)가 동시에 하이레벨일 경우는 없다. 그러나, 상기 제어신호(Hg, Lg)를 출력하는 제어기(도시생략)가 이상동작을 하거나, 상기 상위/하위게이트버퍼(10, 20)의 소자가 이상동작하여, 상기 제1,2스위칭소자(Q1, Q2)가 동시에 턴온되려고 할 때에는, 상기 제1,2스위칭소자(Q1,Q2)의 게이트전압(VH, VL)이 모두 하이레벨이 된다. 본 발명에 따른 쇼트판별회로(40)는 상기와 같이 제1,2스위칭소자(Q1, Q2)의 게이트전압을 체크하여 쇼트상태를 판별한다.In the above, in the normal operation state, the upper gate control signal Hg and the lower gate control signal Lg are not at the same time high level. However, the controller (not shown) outputting the control signals Hg and Lg abnormally operates, or the elements of the upper / lower gate buffers 10 and 20 abnormally operate so that the first and second switching elements ( When Q1 and Q2 are about to be turned on at the same time, the gate voltages V H and V L of the first and second switching elements Q1 and Q2 are both at a high level. The short discrimination circuit 40 according to the present invention determines the short state by checking the gate voltages of the first and second switching elements Q1 and Q2 as described above.
즉, 쇼트판별회로(40)에서, 제1,2포토커플러(op1, op2)는 상기 제1,2스위칭소자(Q1,Q2)의 게이트에 소정전압이 인가될때, 동작을 한다.That is, in the short discrimination circuit 40, the first and second photocouplers op1 and op2 operate when a predetermined voltage is applied to the gates of the first and second switching elements Q1 and Q2.
그런데, 보통의 정상상태라면, 제1,2스위칭소자(Q1,Q2)중 하나만 턴온됨으로서, 제1,2포토커플러(op1,op2)중 하나만 동작하게 된다. 따라서, 두 포토커플러(op1, op2)중 동작하는 한 포토커플러의 수광트랜지스터를 통해 전달된 전류(i1 또는 i2)가 전류검출저항(Rs)에 인가되어, 상기 저항(Rs)에 인가된 전류에 대응하는 전압이 걸린다. 이 전압은 비교기(u1)의 비반전입력단으로 인가되는데, 상기 비교기(u1)의 반전입력단에는 보조전원(Vcc)을 저항(R3,R4)에 의해 분압한 기준전압(Vb)이 인가된다. 상기 기준전압(Vb)는 제1,2포토커플러(op1, op2)중 한 포토커플러가 동작할때, 전류검출저항(Rs)에 걸리는 전압보다는 크고, 제1,2포토커플러(op1, op2)가 모두 동작할때, 전류검출저항(Rs)에 걸리는 전압보다는 작게 되도록 저항(R3)와 저항(R4)의 저항비를 조정하여 설정한 것이다.However, in the normal state, only one of the first and second switching elements Q1 and Q2 is turned on, so that only one of the first and second photocouplers op1 and op2 is operated. Accordingly, the current i1 or i2 transmitted through the phototransistor of the photocoupler, which is one of the two photocouplers op1 and op2, is applied to the current detection resistor Rs, to the current applied to the resistor Rs. The corresponding voltage is taken. This voltage is applied to the non-inverting input terminal of the comparator u1. The reference voltage Vb obtained by dividing the auxiliary power supply Vcc by the resistors R3 and R4 is applied to the inverting input terminal of the comparator u1. The reference voltage Vb is greater than the voltage applied to the current detection resistor Rs when one of the first and second photocouplers op1 and op2 is operated, and the first and second photocouplers op1 and op2 are respectively. When both are operated, the resistance ratio between the resistor R3 and the resistor R4 is set to be smaller than the voltage applied to the current detection resistor Rs.
따라서, 상기 제1,2포토커플러(op1, op2)중 하나가 동작할때는, 비교기(u1)의 비반전입력단에 걸리는 전압(Va)이 반전입력단에 걸리는 전압(Vb)보다 낮음으로 로우레벨신호가 출력된다.Therefore, when one of the first and second photocouplers op1 and op2 operates, the low level signal is lowered because the voltage Va applied to the non-inverting input terminal of the comparator u1 is lower than the voltage Vb applied to the inverting input terminal. Is output.
그리고, 고장이나 오동작등에 의해 제1,2스위칭소자(Q1,Q2)의 게이트로 동시에 하이레벨신호가 인가되면, 제1,2포토커플러(op1,op2)가 동시에 동작하여, 전류검출저항(Rs)에 전류(i1,i2)가 동시에 인가되고, 이에 비교기(u1)의 비반전입력단에 인가되는 전압(Va)이 기준전압(Va)보다 높아진다. 따라서, 비교기(u1)은 하이레벨의 신호를 출력한다.When the high level signal is simultaneously applied to the gates of the first and second switching elements Q1 and Q2 due to a failure or malfunction, the first and second photocouplers op1 and op2 operate simultaneously to provide the current detection resistor Rs. The currents i1 and i2 are simultaneously applied to, and the voltage Va applied to the non-inverting input terminal of the comparator u1 becomes higher than the reference voltage Va. Therefore, the comparator u1 outputs a high level signal.
상기와 같은 동작의 일실시예를 도 3에 각 포인트에서의 동작파형도로 나타낸다.An embodiment of such an operation is shown in FIG. 3 in the operating waveform diagram at each point.
도시된 바와 같이, TO와 같이 제1스위칭소자(Q1)과 제2스위칭소자(Q2)가 정상상태일때는, 한 게이트전압(VH, VL)만 하이레벨상태가 된다. 이때, 비교기(u1)의 비반전단자에 걸리는 전압(Va)이 기준전압(Vb)보다 레벨이 낮아져, 상기 비교기(u1)의 출력(fO)이 로우(LOW)가 되고, 두 게이트전압(VH, VL) 모두 하이레벨인 비정상구간(T1, T2, T3)에서는 상기 비교기(u1)의 비반전입력단에 걸리는 전압(Va)RK 기준전압(Vb)보다 높아져 비교기(u1)의 출력(fO)은 하이(HIGH)가 된다.As shown in the figure, when the first switching element Q1 and the second switching element Q2 are in a normal state such as TO, only one gate voltage V H , V L is in a high level state. At this time, the voltage Va applied to the non-inverting terminal of the comparator u1 is lower than the reference voltage Vb, so that the output f O of the comparator u1 becomes low and the two gate voltages In the abnormal periods T1, T2, and T3, both of which are high level, V H and V L are higher than the voltage Va and RK reference voltage Vb applied to the non-inverting input terminal of the comparator u1, so that the output of the comparator u1 ( f O ) becomes HIGH.
따라서, 상기 비교기(u1)의 출력신호를 체크함에 의해서 이상여부를 판단할 수 있게 되고, 그로부터 적절한 조치, 예를 들어, 제1,2스위칭소자(Q1,Q2)를 모두 차단시킨다는 등의 조치를 취할 수 있게 된다.Therefore, it is possible to determine whether an abnormality is made by checking the output signal of the comparator u1, and appropriate measures such as blocking all of the first and second switching elements Q1 and Q2 therefrom. You can take it.
상술한 바와 같이, 본 발명에 의하면, 간단하고 저렴한 회로구성에 의해서 두개의 스위칭소자가 직렬로 연결되는 하프 브리지(half bridge)회로에서 두 스위칭소자가 모두 턴온되는 이상상태를 바로 검출할 수 있는 우수한 효과가 있다.As described above, according to the present invention, in a half bridge circuit in which two switching elements are connected in series by a simple and inexpensive circuit configuration, it is possible to immediately detect an abnormal state in which both switching elements are turned on. It works.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990022844A KR20010002826A (en) | 1999-06-18 | 1999-06-18 | Circuit for discriminating arm short |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990022844A KR20010002826A (en) | 1999-06-18 | 1999-06-18 | Circuit for discriminating arm short |
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| Publication Number | Publication Date |
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| KR20010002826A true KR20010002826A (en) | 2001-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019990022844A KR20010002826A (en) | 1999-06-18 | 1999-06-18 | Circuit for discriminating arm short |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110026192A (en) * | 2009-09-07 | 2011-03-15 | 삼성전자주식회사 | Protecting apparatus and method for half/full bridge circuit which have the first switching unit and the second switching unit connected to the first switching unit in series in image forming apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH071549A (en) * | 1993-06-22 | 1995-01-06 | Sekisui Chem Co Ltd | Metal mold for extrusion molding of thick wall synthetic resin plate |
| KR960027338A (en) * | 1994-12-28 | 1996-07-22 | 이종수 | Arm Short Protection |
| JPH08298785A (en) * | 1995-04-25 | 1996-11-12 | Hitachi Ltd | Protection circuit of power conversion circuit |
| JPH09182463A (en) * | 1995-12-28 | 1997-07-11 | Fuji Electric Co Ltd | Arm short circuit detector of voltage type inverter |
| JPH10341578A (en) * | 1997-06-06 | 1998-12-22 | Mitsubishi Electric Corp | Arm short-circuit detecting circuit of inverter equipment |
-
1999
- 1999-06-18 KR KR1019990022844A patent/KR20010002826A/en not_active Application Discontinuation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH071549A (en) * | 1993-06-22 | 1995-01-06 | Sekisui Chem Co Ltd | Metal mold for extrusion molding of thick wall synthetic resin plate |
| KR960027338A (en) * | 1994-12-28 | 1996-07-22 | 이종수 | Arm Short Protection |
| JPH08298785A (en) * | 1995-04-25 | 1996-11-12 | Hitachi Ltd | Protection circuit of power conversion circuit |
| JPH09182463A (en) * | 1995-12-28 | 1997-07-11 | Fuji Electric Co Ltd | Arm short circuit detector of voltage type inverter |
| JPH10341578A (en) * | 1997-06-06 | 1998-12-22 | Mitsubishi Electric Corp | Arm short-circuit detecting circuit of inverter equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110026192A (en) * | 2009-09-07 | 2011-03-15 | 삼성전자주식회사 | Protecting apparatus and method for half/full bridge circuit which have the first switching unit and the second switching unit connected to the first switching unit in series in image forming apparatus |
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