KR20000066958A - Method of manufacturing field emission display device - Google Patents

Abstract

PURPOSE: A method for making a field emission display device is provided to easily make a large area by using a photoresist layer on behalf of aluminum layer as a sacrifice layer about a forming of emitter tip. CONSTITUTION: An insulation layer(22) and a gate electrode layer(23) are sequentially formed on a substrate(20) having a cathode line(21). A gate hole is formed by etching the gate electrode layer and the insulation layer, and is partially exposed. A photoresist layer(24) is deposited on the gate electrode layer to be buried in the gate hole. The photoresist layer is light-exposed, the photoresist layer is remained to edges of the gate electrode layer and the gate hole, and a cathode line within the gate hole is exposed. Tip-forming material layer is formed on the substrate, and a cone typed emitter tip is formed on a cathode line inside of the gate hole. The tip-forming material layer and the photoresist layer are removed.

Description

Method of manufacturing field emission display device

The present invention relates to a method for manufacturing a field emission display device, and more particularly, to a method for manufacturing a field emission display device that can simplify the process by using a photoresist film as a sacrificial film for emitter tip formation.

In general, a field emission display (FED) is a display using a principle of matrix-accessing a field emission array (FEA) and stimulating a phosphor with an electron beam, such as a CRT, to cause cathode ray emission.

This FED has a cathode plate and an anode plate, and a spacer is interposed therebetween. In addition, the cathode plate is provided with a gate electrode and several emitter tips for emitting electrons to form FEA, and the anode plate is provided with an indium tin oxide (ITO) electrode and a phosphor to realize colorization of the field emission display device.

On the other hand, the emitter tip for determining the brightness of the field emission display device is formed by forming a predetermined hole in the gate electrode layer, and then depositing a metal in the shape of a cone in the hole.

1A to 1D are cross-sectional views illustrating a method of manufacturing a conventional FED device.

Referring to FIG. 1A, a cathode line 11 is formed on a substrate 10 such as glass or a wafer, and an insulating film 12 and a gate electrode layer 13 are sequentially formed on the entire surface of the substrate. Then, the gate electrode layer 13 is etched to expose a portion of the insulating film 12 to form holes having a diameter of 0.3 to 1.5 μm, and the exposed insulating film 12 is fluorinated using the gate electrode layer 13 as a mask. Alternatively, the cathode line 11 is exposed by etching with reactive ion etching to form the gate hole H.

Referring to FIG. 1B, a substrate 11 is mounted on a vacuum deposition apparatus, and an aluminum film 14 is deposited as a sacrificial layer while being rotated about a rotation axis perpendicular to the surface of the substrate 11 to form a gate hole H. Refine the size of At this time, aluminum particles are incident at an angle of 30 degrees with respect to the substrate surface, and the aluminum film 14 is deposited on the edges of the gate electrode layer 13 and the gate hole H, so that the diameter of the gate hole H is narrow. Lose. That is, the narrower the size of the gate hole H, the higher the electric field formed at the tip to be formed later, so that not only low voltage driving is possible but more gate holes can be formed in the gate electrode layer 13, so that the emission current can be made uniform. have.

Referring to FIG. 1C, a tip-forming material film, preferably Mo film 15, is deposited on the cathode line 11 by using an E-beam evaporation apparatus on the structure of FIG. 1B. After the emitter tip 15A is formed, as shown in FIG. 1D, the Mo film 15 and the aluminum film 14 deposited on the aluminum film 14 are removed by a lift off method. .

However, when the aluminum film is used as the sacrificial layer, as described above, not only the angle must be incident by using the vacuum deposition equipment, but also the aluminum film must be deposited while rotating, so that a high accuracy is required in a relatively high-level process. Difficulty in producing large area FED.

Accordingly, the present invention is to solve the above-mentioned problems, and to provide a new field emission display device that can be easily applied to large area using a photoresist film instead of an aluminum film as a sacrificial layer for emitter tip formation. The purpose is to provide.

1A to 1D are cross-sectional views illustrating a conventional method for manufacturing a field emission display device.

2A to 2E are cross-sectional views illustrating a method of manufacturing a field emission display device according to an exemplary embodiment of the present invention.

(Explanation of symbols for main parts of drawing)

20: substrate 21: cathode line

22 insulating film 23 gate electrode layer

24: photoresist film 25: material film for forming the tip

25A: Emitter Tip

Method of manufacturing a field emission display device according to the present invention for achieving the above object comprises the steps of sequentially forming an insulating film and a gate electrode layer on a substrate having a cathode line formed thereon; Etching the gate electrode layer and the insulating layer to form a gate hole exposing a portion of the cathode line; Applying a photoresist film on the gate electrode layer so as to be embedded in the gate hole; Exposing and developing the photoresist film, leaving the photoresist film at the edges of the gate electrode layer and the gate hole, and exposing a cathode line in the gate hole; Forming a tip material layer on the substrate to form a conical emitter tip on the cathode line in the gate hole; And removing the tip forming material film and the photoresist film on the photoresist film.

In addition, the cathode line is formed of a transparent material such as ITO, and the photoresist film is exposed to back exposure.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention.

2A through 2E are cross-sectional views illustrating a method of manufacturing a field emission display device according to an exemplary embodiment of the present invention.

Referring to FIG. 2A, a cathode line 21 is formed on a substrate 20 such as glass or a wafer. Preferably, the cathode line 21 is formed of a transparent material such as indium tin oxide (ITO) in consideration of the back exposure. Then, the insulating film 22 and the gate electrode layer 23 are sequentially formed on the substrate on which the cathode line 21 is formed, and the gate electrode layer 23 is etched to expose a portion of the insulating film 22 to form holes. The exposed insulating film 22 using the gate electrode layer 23 as a mask is etched by hydrofluoric acid or reactive ion etching to expose the cathode line 21 to form a gate hole H1.

Referring to FIG. 2B, a photoresist film 24 is coated on the gate electrode layer 23 as a sacrificial layer so as to be embedded in the gate hole H1, and the backside exposure is performed using the gate electrode layer 23 as an exposure mask. The photoresist film 24A on (H1) is exposed. Thereafter, the development process is performed to remove the exposed photoresist film 24A so that the photoresist film 24 is left at the edges of the gate electrode layer 13 and the gate hole H, as shown in FIG. 2C. The diameter of the gate hole H is narrowed. That is, the narrower the size of the gate hole H, the higher the electric field formed at the tip to be formed later, so that not only low voltage driving is possible but more gate holes can be formed in the gate electrode layer 13, so that the emission current can be made uniform. have.

Then, as shown in FIG. 2D, the tip forming material film 25 is deposited on the structure of FIG. 2C by using an electron beam deposition apparatus, and the cone-shaped emitter tip 25A is formed on the cathode line 21. To form. Preferably, the tip forming material film 25 is formed of one film selected from the group consisting of Mo film, MoW film and W film. Thereafter, as shown in FIG. 2E, the tip forming material film 25 and the photoresist film 24 deposited on the photoresist film 24 are removed.

According to the present invention described above, since a photoresist film is used instead of an aluminum film as a sacrificial layer for emitter tip formation, a vacuum deposition apparatus requiring high difficulty and high accuracy as in the prior art is not required, and ITO and ITO are used as cathode line materials. Since the same transparent material is used and the photoresist film is patterned by back exposure, the process is simplified. In addition, it is easy to manufacture the FED corresponding to the large area, it is possible to obtain the effect of not only reducing the cost but also improving the yield.

In addition, this invention is not limited to the said Example, It can variously deform and implement within the range which does not deviate from the technical summary of this invention.

Claims (3)

Sequentially forming an insulating film and a gate electrode layer on a substrate on which a cathode line is formed; Etching the gate electrode layer and the insulating layer to form a gate hole exposing a portion of the cathode line; Applying a photoresist film on the gate electrode layer to be buried in the gate hole; Exposing and developing the photoresist film to leave the photoresist film at edges of the gate electrode layer and the gate hole and to expose the cathode line in the gate hole; Forming a tip material layer on the substrate to form a conical emitter tip on a cathode line in the gate hole; And And removing the tip-forming material film and the photoresist film on the photoresist film. The method of claim 1, wherein the cathode line is formed of a transparent material such as ITO. The method of claim 2, wherein the photoresist film is exposed to backside exposure.