KR20000065391A - Method for improving on uniformity of illuminance - Google Patents
Method for improving on uniformity of illuminance Download PDFInfo
- Publication number
- KR20000065391A KR20000065391A KR1019990011615A KR19990011615A KR20000065391A KR 20000065391 A KR20000065391 A KR 20000065391A KR 1019990011615 A KR1019990011615 A KR 1019990011615A KR 19990011615 A KR19990011615 A KR 19990011615A KR 20000065391 A KR20000065391 A KR 20000065391A
- Authority
- KR
- South Korea
- Prior art keywords
- light
- uniformity
- split
- improving
- polarization
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
Abstract
Description
본 발명은 반도체 장치의 노광장비에 있어서, 특히 조명광을 넓고 고르게 분산시켜 조명광의 균일도를 향상시키는데 적당한 조명광의 균일도 향상방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for improving the uniformity of illumination light, which is particularly suitable for improving the uniformity of illumination light by spreading the illumination light widely and evenly.
이하, 첨부된 도면을 참조하여 종래 기술에 따른 조명광의 균일도 향상방법을 설명하기로 한다.Hereinafter, a method for improving uniformity of illumination light according to the related art will be described with reference to the accompanying drawings.
도 1은 일반적으로 노광시 광의 조사형태를 개략적으로 나타낸 도면이다.1 is a view schematically showing a form of irradiation of light during exposure in general.
반도체 소자 제조시 사용하는 노광장비중 일예로 KrF 노광장치에서 입사되는 조명광의 균일도(Uniformity)를 향상시키기 위해서는 빔(beam)을 스플릿(Split)하고, 또 이미지 쉬프터(image shifter)를 장착하여 중복되는 광의 스페셜 코히리언스(Spatial coherence)를 저하시키는 것에 의해 광 밀도(intensity)를 고르게 만들어 주는 방법을 사용하였다.One example of an exposure apparatus used to manufacture a semiconductor device is to split a beam and to mount an image shifter in order to improve the uniformity of illumination light incident from the KrF exposure apparatus. The method of making the light intensity even by decreasing the special coherence of light was used.
여기서, 빔을 스플릿하는 스플릿터 및 이미지 쉬프터를 노광장치에서 사용하는 이유는 광 소오스의 크기기 작기 때문에 빔을 스플릿하여 도 1에서와 같이 조합하고, 이미지 쉬프터를 사용하여 넓은 면적에 대한 균일도를 향상시키기 위함이다.The reason for using the splitter and the image shifter for splitting the beam in the exposure apparatus is that the size of the light source is small, so that the beam is split and combined as shown in FIG. 1, and the uniformity of the large area is improved by using the image shifter. To do so.
도 1에 도시된 바와 같이, 입사되는 조명광의 균일도를 향상시키기 위해 빔을 스플릿하여(빔1,2,3,4) 재배치하고, 또 이미지 쉬프터를 장착하여 중복되는 광을 흔들어 줌으로써 스페셜 코히리언스 저하를 유도하였다.As shown in Fig. 1, special coherence is achieved by splitting the beams (beams 1, 2, 3, 4) to rearrange them to improve the uniformity of the incident illumination light, and by attaching an image shifter to shake the overlapping light. Induced degradation.
따라서, 간섭효과를 억제하여 조사되는 광의 밀도를 고르게 만들어 주게 된다.Therefore, the interference effect is suppressed to make the density of the irradiated light even.
그러나 상기와 같은 종래 조명광의 균일도 향상방법은 광의 밀도를 충분히 고르게 만들어 주지 못하는 문제점이 있었다.However, the conventional method of improving the uniformity of the illumination light has a problem that the density of the light may not be made sufficiently even.
본 발명은 상기한 종래의 문제점을 해결하기 위해 안출한 것으로써, 광의 밀도를 충분히 고르게 만들어 주므로써, 조명광의 균일도를 극대화시키는 방법을 제공하는데 그 목적이 있다.An object of the present invention is to provide a method for maximizing the uniformity of illumination light by making the density of light sufficiently even to solve the above problems.
도 1은 일반적인 조명광의 조사형태를 보여주는 도면1 is a view showing a form of irradiation of general illumination light
도 2는 본 발명에 따른 조명광의 균일도 향상방법을 설명하기 위한 개략적인 도면2 is a schematic view for explaining a method for improving the uniformity of the illumination light according to the present invention.
상기의 목적을 달성하기 위한 본 발명의 조명광의 균일도 향상방법은 일정한 크기로 발진된 레이저광을 스플릿한 후, 스플릿된 광의 위상 및 편광을 다르게하여 중복되는 광의 스페셜 코히리언스를 감소시키는 것을 특징으로 한다.The method for improving the uniformity of the illumination light of the present invention for achieving the above object is characterized by reducing the special coherence of overlapping light by varying the phase and polarization of the split light after splitting the laser light oscillated to a constant size do.
여기서, 상기 스플릿된 광의 위상 및 편광을 다르게 하기 위해 상기 스플릿된 각각의 광 경로에 두께가 서로 다른 매질을 삽입하는 방법을 이용한다.Here, in order to change the phase and polarization of the split light, a method of inserting a medium having a different thickness into each split light path is used.
이하, 본 발명에 따른 조명광의 균일도 향상방법을 첨부된 도면을 참조하여 설명하기로 한다.Hereinafter, a method for improving uniformity of illumination light according to the present invention will be described with reference to the accompanying drawings.
먼저, 본 발명의 조명광의 균일도 향상방법은 스플릿된 빔의 위상(phase) 및 편광(polarization)을 각기 다르게하여 스페셜 코히리언스를 더욱 효과적으로 튜닝(tunning)한다.First, the method of improving the uniformity of the illumination light of the present invention tunes the special coherence more effectively by varying the phase and polarization of the split beam.
즉, 광이 중복되는 영역에서의 간섭은 편광이 서로 동일한 경우에 일어나므로 본 발명에서는 간섭이 일어나지 않도록 편광을 다르게 하여 스페셜 코히리언스를 감소시킨다.That is, since interference in the region where the light overlaps occurs when the polarizations are the same, the present invention reduces the special coherence by changing the polarization so that interference does not occur.
따라서, 광이 중복되는 영역에서의 간섭효과를 감소시킨다.Therefore, the interference effect in the area where the light overlaps is reduced.
도 2는 본 발명의 조명광의 균일도 향상방법을 설명하기 위한 개념도이다.2 is a conceptual view for explaining a method for improving the uniformity of the illumination light of the present invention.
도 2에 도시한 바와 같이, 스플릿터(spliter)를 통해 스플릿된 빔을 위상 및 편광을 다르게 해준다.As shown in Fig. 2, the splitter makes the split beam different in phase and polarization.
여기서, 광의 위상 및 편광을 다르게 해주는 방법으로는 각각의 빔 경로에 두께가 다른 매질을 삽입하는 방법을 이용한다.In this case, a method of inserting a medium having a different thickness into each beam path is used as a method of changing the phase and polarization of light.
상기 방법을 통해 광의 위상 및 편광을 다르게 해주면, 스페셜 코히리언스가 감소하게 되고, 빔이 중복되는 영역에서의 간섭효과를 감소시킬 수가 있다.By varying the phase and polarization of the light through the above method, the special coherence is reduced, and the interference effect in the region where the beam overlaps can be reduced.
이와 같이, 중복되는 영역에서의 광의 간섭효과는 (빔1의 넓이+빔2의 넓이)2보다는 (빔1의 넓이2+ 빔2의 넓이2)가 스페셜 코히리언스가 작아지게 된다.Thus, the light interference effect at the overlap region becomes (beam 1 beam 2 + width of the width) rather than 2 (the width of the beam 1 beam 2 + 2 of width 2) Special coherent Varian Suga small.
따라서, 스페셜 코히리언스가 작아지게 되어 광의 밀도가 작아지게 되며, 이에 따라 광의 균일도가 향상된다.As a result, the special coherence becomes smaller and the light density becomes smaller, thereby improving the uniformity of the light.
이상 상술한 바와 같이, 본 발명의 조명광의 균일도 향상방법은 스플릿된 광의 위상 및 편광을 다르게 하여 스페셜 코히리언스를 작게하는 것에 의해 광의 밀도를 작게하여 조명광의 균일도를 향상시키므로 보다 정밀한 노광이 가능한 효과가 있다.As described above, the method of improving the uniformity of the illumination light according to the present invention improves the uniformity of the illumination light by reducing the density of the light by reducing the special coherence by varying the phase and polarization of the split light, thereby enabling more accurate exposure. There is.
Claims (2)
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KR1019990011615A KR20000065391A (en) | 1999-04-02 | 1999-04-02 | Method for improving on uniformity of illuminance |
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KR1019990011615A KR20000065391A (en) | 1999-04-02 | 1999-04-02 | Method for improving on uniformity of illuminance |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020001645A1 (en) * | 2018-06-29 | 2020-01-02 | 上海微电子装备(集团)股份有限公司 | Lithography machine luminance uniformity compensation method and device, and illumination system and lithography machine |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60230629A (en) * | 1984-04-28 | 1985-11-16 | Nippon Kogaku Kk <Nikon> | Lighting optical device |
JPS61169815A (en) * | 1985-01-22 | 1986-07-31 | Nippon Kogaku Kk <Nikon> | Lighting optical device |
JPH07335523A (en) * | 1994-06-06 | 1995-12-22 | Nec Corp | Lighting optical device |
JPH10106927A (en) * | 1996-10-01 | 1998-04-24 | Canon Inc | Aligner and device manufacturing method |
-
1999
- 1999-04-02 KR KR1019990011615A patent/KR20000065391A/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60230629A (en) * | 1984-04-28 | 1985-11-16 | Nippon Kogaku Kk <Nikon> | Lighting optical device |
JPS61169815A (en) * | 1985-01-22 | 1986-07-31 | Nippon Kogaku Kk <Nikon> | Lighting optical device |
JPH07335523A (en) * | 1994-06-06 | 1995-12-22 | Nec Corp | Lighting optical device |
JPH10106927A (en) * | 1996-10-01 | 1998-04-24 | Canon Inc | Aligner and device manufacturing method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020001645A1 (en) * | 2018-06-29 | 2020-01-02 | 上海微电子装备(集团)股份有限公司 | Lithography machine luminance uniformity compensation method and device, and illumination system and lithography machine |
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